CN111524707A - Composite wire material for anode lead of tantalum capacitor and preparation method thereof - Google Patents
Composite wire material for anode lead of tantalum capacitor and preparation method thereof Download PDFInfo
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- CN111524707A CN111524707A CN202010351049.7A CN202010351049A CN111524707A CN 111524707 A CN111524707 A CN 111524707A CN 202010351049 A CN202010351049 A CN 202010351049A CN 111524707 A CN111524707 A CN 111524707A
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- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 title claims abstract description 133
- 229910052715 tantalum Inorganic materials 0.000 title claims abstract description 94
- 239000002131 composite material Substances 0.000 title claims abstract description 72
- 239000003990 capacitor Substances 0.000 title claims abstract description 59
- 239000000463 material Substances 0.000 title claims description 15
- 238000002360 preparation method Methods 0.000 title abstract description 8
- 229910052751 metal Inorganic materials 0.000 claims abstract description 19
- 239000002184 metal Substances 0.000 claims abstract description 19
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 13
- 239000000956 alloy Substances 0.000 claims abstract description 13
- 229910001362 Ta alloys Inorganic materials 0.000 claims abstract description 12
- 150000002739 metals Chemical class 0.000 claims abstract description 6
- 229910001092 metal group alloy Inorganic materials 0.000 claims abstract description 5
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims abstract 3
- 229910001257 Nb alloy Inorganic materials 0.000 claims description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 10
- 239000011248 coating agent Substances 0.000 claims description 10
- 238000000576 coating method Methods 0.000 claims description 10
- 238000005253 cladding Methods 0.000 claims description 9
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 7
- 238000003466 welding Methods 0.000 claims description 7
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 6
- 229910052758 niobium Inorganic materials 0.000 claims description 6
- 239000010955 niobium Substances 0.000 claims description 6
- RHDUVDHGVHBHCL-UHFFFAOYSA-N niobium tantalum Chemical compound [Nb].[Ta] RHDUVDHGVHBHCL-UHFFFAOYSA-N 0.000 claims description 6
- 238000012545 processing Methods 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 3
- 238000005266 casting Methods 0.000 claims description 3
- 229910017052 cobalt Inorganic materials 0.000 claims description 3
- 239000010941 cobalt Substances 0.000 claims description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 238000004880 explosion Methods 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 229910052749 magnesium Inorganic materials 0.000 claims description 3
- 239000011777 magnesium Substances 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 238000004663 powder metallurgy Methods 0.000 claims description 3
- 238000005096 rolling process Methods 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 229910052726 zirconium Inorganic materials 0.000 claims description 3
- 238000001125 extrusion Methods 0.000 claims description 2
- 230000004927 fusion Effects 0.000 claims description 2
- 238000007740 vapor deposition Methods 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 abstract description 18
- 230000003647 oxidation Effects 0.000 abstract description 6
- 238000007254 oxidation reaction Methods 0.000 abstract description 6
- 239000002344 surface layer Substances 0.000 abstract description 4
- 150000001875 compounds Chemical class 0.000 abstract 1
- 150000003481 tantalum Chemical class 0.000 abstract 1
- 238000004321 preservation Methods 0.000 description 12
- 238000000137 annealing Methods 0.000 description 11
- 238000012360 testing method Methods 0.000 description 9
- 239000002253 acid Substances 0.000 description 6
- 238000011049 filling Methods 0.000 description 5
- 239000004033 plastic Substances 0.000 description 5
- 238000005245 sintering Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 229920001342 Bakelite® Polymers 0.000 description 4
- 239000004637 bakelite Substances 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 238000000462 isostatic pressing Methods 0.000 description 4
- 229910001093 Zr alloy Inorganic materials 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 238000005554 pickling Methods 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 229910001369 Brass Inorganic materials 0.000 description 1
- 238000003723 Smelting Methods 0.000 description 1
- 239000010951 brass Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/008—Terminals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/0029—Processes of manufacture
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Powder Metallurgy (AREA)
- Chemical Treatment Of Metals (AREA)
Abstract
The invention discloses a composite wire for an anode lead of a tantalum capacitor and a preparation method thereof. Wherein, this tantalum capacitor anode lead wire includes with compound silk: the core body is made of other metals except pure tantalum, tantalum alloy or other metal alloys; and the tantalum metal layer is coated on the outer surface of the core body. By applying the technical scheme of the invention, the composite wire for the anode lead of the tantalum capacitor has the core body of other metals or alloys except pure tantalum and the tantalum metal layer coated on the outer surface of the core body, so that the characteristics that the surface layer tantalum metal can form an oxide film with high dielectric constant and high reliability on the surface of the core body through anodic oxidation are fully utilized, and the core body is filled with cheap metal or alloy, thereby meeting the requirement of the tantalum capacitor on the high dielectric constant of the anode lead and greatly reducing the cost.
Description
Technical Field
The invention relates to the technical field of capacitors, in particular to a composite wire for an anode lead of a tantalum capacitor and a preparation method thereof.
Background
Tantalum capacitors are widely used in the fields of communications, computers, automobiles, household appliances, and aerospace. The tantalum capacitor manufactured by using tantalum powder as an anode and tantalum wires as an anode lead has the advantages of small volume, large capacitance, convenient surface mounting, good reliability, long service life and the like. Therefore, the capacitor can stably work under the harsh conditions which can not be met by many other capacitors (such as ceramic, aluminum film and the like).
However, tantalum is a rare metal, resources are scarce, extraction and smelting are difficult, and cost is high, and pure tantalum or high-tantalum alloy is used as an anode lead, so that although an oxide film with a high dielectric constant and high reliability formed by anodic oxidation on the surface of the tantalum is ensured, the high cost of tantalum greatly limits the application field and range of the tantalum.
Therefore, it is highly desirable to develop an anode lead having a low cost and a dielectric constant satisfying the requirements of tantalum capacitors.
Disclosure of Invention
The invention aims to provide a composite wire for an anode lead of a tantalum capacitor and a preparation method thereof, and provides an anode lead which is low in cost and can meet the requirement of the tantalum capacitor on dielectric constant.
In order to achieve the above object, according to one aspect of the present invention, there is provided a composite wire for an anode lead of a tantalum capacitor. The composite wire for the anode lead of the tantalum capacitor comprises: the core body is made of other metals except pure tantalum, tantalum alloy or other metal alloys; and the tantalum metal layer is coated on the outer surface of the core body.
Further, when the tantalum metal layer is made of tantalum-niobium alloy, the content of tantalum is more than 50%, and the sum of the contents of tantalum and niobium is more than 95%; when the material of the tantalum metal layer is other alloys except the tantalum-niobium alloy, the content of tantalum is more than 95 percent.
Further, the cross section of the composite wire material for the anode lead of the tantalum capacitor is circular, oval or polygonal.
Further, the proportion of the cross-sectional area of the tantalum metal layer in the cross-sectional area of the composite wire for the anode lead of the tantalum capacitor is 1-80%; preferably 1 to 50%.
Furthermore, the cross section of the composite wire is in an axial symmetry shape, the longest axis is less than or equal to 3.0mm, and the shortest axis is greater than or equal to 0.1 mm.
Further, the material of the core is selected from one or more of the group consisting of niobium, zirconium, tungsten, molybdenum, titanium, nickel, iron, copper, aluminum, magnesium, cobalt, and alloys thereof.
According to one aspect of the invention, a preparation method of the composite wire for the anode lead of the tantalum capacitor is provided. The preparation method comprises the following steps: s1, providing a core body; and S2, coating the outer surface of the core body with a tantalum metal layer to obtain the composite wire for the anode lead of the tantalum capacitor.
Further, after S2, the method further includes processing the composite wire for the anode lead of the tantalum capacitor to a required size by one or more of extrusion, rolling, swaging and drawing.
Further, in S2, coating the tantalum metal layer on the outer surface of the core body is achieved by powder metallurgy, welding coating, explosion cladding, pipe cladding or fusion casting cladding, and vapor deposition.
By applying the technical scheme of the invention, the composite wire for the anode lead of the tantalum capacitor has the core body of other metals, tantalum alloys or other alloys except pure tantalum and the tantalum metal layer coated on the outer surface of the core body, so that the characteristic that the surface layer tantalum metal can form an oxide film with high dielectric constant and high reliability on the surface of the core body through anodic oxidation is fully utilized, and the core body is filled with cheap metal or alloy, so that the requirement of the tantalum capacitor on the high dielectric constant of the anode lead is met, and the cost is greatly reduced.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this application, illustrate embodiments of the invention and, together with the description, serve to explain the invention and not to limit the invention. In the drawings:
FIG. 1 is a schematic cross-sectional view showing the structure of a composite wire for an anode lead of a tantalum capacitor produced according to an embodiment of the present invention.
Detailed Description
It should be noted that the embodiments and features of the embodiments in the present application may be combined with each other without conflict. The present invention will be described in detail below with reference to the embodiments with reference to the attached drawings.
Tantalum wire or high tantalum alloy wire is used as a wire material for an anode lead of a tantalum capacitor, and mainly because tantalum can form a very thin oxide film with high dielectric constant and high reliability on the surface thereof through anodic oxidation. However, the tantalum wire or high-tantalum alloy wire manufactured by the prior art is expensive and cannot be widely used, or the performance of the tantalum wire or high-tantalum alloy wire cannot meet all quality requirements of a tantalum capacitor. In order to solve the technical problems, the invention provides the following technical scheme.
According to an exemplary embodiment of the present invention, a composite wire for an anode lead of a tantalum capacitor is provided. The composite wire for the anode lead of the tantalum capacitor is shown in figure 1 and comprises a core body 10 and a tantalum metal layer 20 coated on the outer surface of the core body, wherein the core body is made of other metals except pure tantalum, tantalum alloy or other metal alloys.
By applying the technical scheme of the invention, the composite wire for the anode lead of the tantalum capacitor has the core body made of other metal tantalum alloys except pure tantalum or other metal alloys and the tantalum metal layer coated on the outer surface of the core body, so that the characteristic that the surface layer tantalum metal can form an oxide film with high dielectric constant and high reliability on the surface of the core body through anodic oxidation is fully utilized, and the core part is filled with cheap metal or alloy, so that the requirement of the tantalum capacitor on the high dielectric constant of the anode lead is met, and the cost is greatly reduced.
When the tantalum metal layer is made of tantalum-niobium alloy, the content of tantalum is more than 50%, and the sum of the contents of tantalum and niobium is more than 95%; when the material of the tantalum metal layer is other alloys except the tantalum-niobium alloy, the content of tantalum is more than 95 percent. Typically, the tantalum content in the tantalum metal layer is more than 95 percent, so as to ensure that the surface layer of the composite wire for the anode lead of the tantalum capacitor can form an oxide film with high dielectric constant on the surface thereof through anodic oxidation; the core is made of tantalum alloy with a tantalum content of less than 90%, which is sufficient for cost reduction, but the tantalum content of the tantalum alloy is preferably less than 80%, 70%, 60%, more preferably less than 50%, 40%, 30%, 20%, 10%, etc. In an exemplary embodiment of the invention, the material of the core is selected from one or more of the group consisting of niobium, zirconium, tungsten, molybdenum, titanium, nickel, iron, copper, aluminum, magnesium, cobalt, and alloys thereof. The cross section of the composite wire for the anode lead of the tantalum capacitor can be set to be any shape according to actual needs, such as a circle, an ellipse, a polygon and the like, wherein the polygon is a square, a rectangle, a rhombus, a pentagon, a hexagon and the like.
In order to fully exert the performance of tantalum and ensure excellent performance indexes without overhigh cost, the coating area ratio of the tantalum metal layer is preferably 1-80 percent, more preferably 1-50 percent, namely the cross section area of the surface tantalum metal layer accounts for 1-80 percent, more preferably 1-50 percent of the cross section area of the composite wire material for the anode lead of the tantalum capacitor.
According to a typical embodiment of the invention, the cross section of the composite wire is in an axisymmetric shape, the longest axis is less than or equal to 3.0mm, and the shortest axis is greater than or equal to 0.1 mm.
In accordance with an exemplary embodiment of the present invention, a tantalum capacitor is provided. The tantalum capacitor comprises an anode lead, and the anode lead is made of the composite wire material for the anode lead of the tantalum capacitor. By adopting the composite wire material for the anode lead of the tantalum capacitor, the tantalum capacitor has excellent performance and greatly reduced cost.
According to an exemplary embodiment of the present invention, there is provided a method of preparing the above composite wire for an anode lead of a tantalum capacitor. The preparation method comprises the following steps: s1, providing a core body; and S2, coating the outer surface of the core body with a tantalum metal layer to obtain the composite wire for the anode lead of the tantalum capacitor.
In an exemplary embodiment of the invention, after S2, rolling, extruding, swaging, drawing the composite wire for the anode lead of the tantalum capacitor to the required size is further included according to actual needs. In S2, the coating of the tantalum metal layer on the outer surface of the core body may be achieved by, but not limited to, powder metallurgy, welding coating, explosion cladding, pipe-filling cladding, or fusion-casting cladding.
The following examples are provided to further illustrate the advantageous effects of the present invention.
Example 1
Taking a Ta-40% Nb alloy rod with the diameter of 30mm and the length of 600mm, filling the Ta-40% Nb alloy rod into a thin-wall plastic tube with the inner diameter of 50mm and the length of 700mm, sealing one end of the thin-wall plastic tube by using a bakelite plug, and filling 3kg of tantalum powder into the tube so as to uniformly distribute the Ta-40% Nb alloy rod. And the other end is sealed by a bakelite choke plug. Isostatic pressing under 200MPa, sintering at 2000 deg.C under vacuum of no less than 5 × 10^ -2Pa for 180 min, isostatic pressing under 250MPa, and vacuum sintering at 2200 deg.C for 180 min to obtain composite bar with outer diameter of 35 mm.
The composite rod is processed to be 13mm in diameter by rotary swaging, is subjected to heat preservation at 1250 ℃ for 60 minutes after being pickled, is subjected to annealing, is processed to be 3mm in diameter by rotary swaging, is subjected to heat preservation at 1250 ℃ for 60 minutes after being pickled, is subjected to multi-mode drawing to be a composite wire with the diameter of 1.2mm, is subjected to acid pickling, is subjected to heat preservation at 1250 ℃ for 60 minutes after being pickled, and is subjected to multi-mode drawing to be a composite wire with the diameter of 0.25 mm.
Example 2
Taking a Nb-1% Zr alloy rod with the diameter of 30mm and the length of 600mm, filling the Nb-1% Zr alloy rod into a thin-wall plastic pipe with the inner diameter of 50mm and the length of 700mm, sealing one end of the thin-wall plastic pipe by using a bakelite plug, and filling 3kg (tantalum powder 95% + niobium powder 5%) into the thin-wall plastic pipe so as to uniformly distribute the Nb-1% Zr alloy rod. And the other end is sealed by a bakelite choke plug. Isostatic pressing under 200MPa, sintering at 2000 deg.C under vacuum of no less than 5 × 10^ -2Pa for 180 min, isostatic pressing under 250MPa, and vacuum sintering at 2200 deg.C for 180 min to obtain composite bar with outer diameter of 35 mm.
The composite rod is processed to be 13mm in diameter by rotary swaging, is subjected to heat preservation at 1250 ℃ for 60 minutes after being pickled, is subjected to annealing, is processed to be 3mm in diameter by rotary swaging, is subjected to heat preservation at 1250 ℃ for 60 minutes after being pickled, is subjected to multi-mode drawing to be a composite wire with the diameter of 1.2mm, is subjected to acid pickling, is subjected to heat preservation at 1250 ℃ for 60 minutes after being pickled, and is subjected to multi-mode drawing to be a composite wire with the diameter of 0.25 mm.
Example 3
Taking an SS304 stainless steel bar with the diameter of 12mm and the length of 1000mm, tightly covering the surface of the stainless steel bar with a tantalum belt with the length of 1000mm, the width of 39mm and the thickness of 0.5mm as shown in figure 1, carrying out butt welding on the tantalum belt by using argon arc welding to form a composite bar with the outer diameter of 13mm, and carrying out heat preservation for 180 minutes at 1250 ℃ under vacuum for annealing.
The subsequent processing of the composite rod with the diameter of 13mm is the same as that of the embodiment 1, and finally the composite wire with the diameter of 0.25mm is obtained.
Example 4
Taking a Ta-50% Nb alloy rod with the diameter of 24mm and the length of 500mm, tightly attaching a tantalum belt with the length of 500mm, the width of 78mm and the thickness of 0.5mm on the surface of the alloy rod as shown in figure 1, carrying out butt welding on the tantalum belt by using argon arc welding to form a composite rod with the outer diameter of 25mm, and carrying out heat preservation for 180 minutes at 1250 ℃ in vacuum for annealing.
The subsequent processing of the composite rod with the diameter of 25mm is the same as that of the embodiment 1, and finally the composite wire with the diameter of 0.80mm is obtained.
Example 5
Taking a nickel rod with the diameter of 12mm and the length of 1000mm, penetrating the nickel rod into a tantalum tube with the outer diameter of 17mm, the inner diameter of 12.5mm and the length of 1000mm, and annealing at 1250 ℃ for 180 minutes under vacuum to obtain a composite rod with the outer diameter of 17 mm.
The subsequent processing of the composite rod with the diameter of 17mm is the same as the embodiment 1, and finally the composite wire with the diameter of 0.15mm is obtained.
Example 6
Taking a nickel rod with the diameter of 10.5mm and the length of 1000mm, penetrating the nickel rod into a tantalum tube with the outer diameter of 12mm, the inner diameter of 11mm and the length of 1000mm, and annealing at 1250 ℃ for 180 minutes under vacuum to obtain a composite rod with the outer diameter of 12 mm.
The composite rod is processed by rotary swaging until the diameter is 3mm, is subjected to acid cleaning and then is subjected to heat preservation at 1250 ℃ for 60 minutes in vacuum for annealing, is subjected to multi-mode drawing until the diameter of the composite rod is 1.2mm, is subjected to acid cleaning and then is subjected to heat preservation at 1250 ℃ for 60 minutes in vacuum for annealing, and is rolled to a composite flat wire with the diameter of 1.5mm multiplied by 0.5mm by a small multi-roll mill.
Example 7
A65 brass rod with the diameter of 12mm and the length of 1000mm is taken and penetrated into a fine grain doped tantalum tube (containing 500PPM of silicon and 200PPM of lanthanum) with the outer diameter of 14mm, the inner diameter of 12.5mm and the length of 1000mm, and the composite rod with the outer diameter of 14mm is obtained after annealing is carried out for 180 minutes at 1250 ℃ under vacuum.
The composite rod is processed by rotary swaging until the diameter is 3mm, is subjected to acid cleaning and then is subjected to heat preservation at 1250 ℃ for 60 minutes in vacuum for annealing, is subjected to multi-mode drawing until the diameter of the composite rod is 1.2mm, is subjected to acid cleaning and then is subjected to heat preservation at 1250 ℃ for 60 minutes in vacuum for annealing, and is rolled to a composite flat wire with the diameter of 1.5mm multiplied by 0.5mm by a small multi-roll mill.
The results of testing the composite wires for anode leads of tantalum capacitors and the pure metallic tantalum wires manufactured in examples 1 to 7 are shown in the following tables 1 to 4:
table 1: diameter and ovality
Numbering | Maximum value (mm) | Minimum value (mm) | Mean value (mm) | Ovality (mm) |
Example 1 | 0.2506 | 0.2501 | 0.2504 | 0.0005 |
Example 2 | 0.2502 | 0.2498 | 0.2500 | 0.0004 |
Example 3 | 0.2505 | 0.2499 | 0.2503 | 0.0005 |
Example 4 | 0.8014 | 0.7999 | 0.8006 | 0.0015 |
Example 5 | 0.1503 | 0.1500 | 0.1502 | 0.0003 |
Example 6 | 1.4998 | 0.5004 | ||
Example 7 | 1.5002 | 0.4999 | ||
Pure metal tantalum wire | 0.2504 | 0.2499 | 0.2503 | 0.0004 |
Table 2: mechanical properties (refer to the national standard GB/T26012-
Table 3: anti-oxygen brittleness and folding (refer to the national standard GB/T26012-
Numbering | The number of times of brittle bending is not less than | The number of times of green bending is not less than |
Example 1 | 5、6、6、5 | 14、15、16 |
Example 2 | 5、5、5、6 | 14、14、17 |
Example 3 | 5、5、5、6 | 15、15、17 |
Example 4 | 5、6、5、6 | 15、14、16 |
Example 5 | 5、5、5、6 | 15、15、16 |
Pure metal tantalum wire | 5、5、6、5、 | 14、13、15、 |
Table 4: electrical Property (refer to the national standard GB/T26012-
Numbering | Product leakage current (mu A/cm)2) |
Example 1 | 0.023 |
Example 2 | 0.021 |
Example 3 | 0.036 |
Example 4 | 0.039 |
Example 5 | 0.019 |
Example 6 | 0.029 |
Example 7 | 0.047 |
Pure metal tantalum wire | 0.029 |
From the results, all detection results of the composite wire reach or are superior to the requirements of the national standard (GB/T26012-2010) of the pure metal tantalum wire, and the detection level of the composite wire is equivalent to the test level of the pure metal tantalum wire.
The comparative test results of the composite wires and the pure metal tantalum wires manufactured in the above examples 1, 2 and 3 and the tantalum capacitor anode block manufactured by pressing and sintering tantalum powder are shown in the following tables 5, 6 and 7:
TABLE 5 comparative test conditions and parameters
TABLE 6 comparison of Wet test leakage test results
TABLE 7 comparative dry test leakage test results
According to the detection results of wet and dry leakage currents, the test values of the composite wire and the pure metal tantalum wire are basically equivalent and are superior to or in line with the requirements of national standards (GB/T2612-2010).
From the above description, it can be seen that the above-described embodiments of the present invention achieve the following technical effects:
1) the surface of the composite wire prepared by the embodiment of the invention has the high dielectric constant of tantalum, can meet the use requirement of a tantalum capacitor, and has excellent electrical property;
2) the core part is made of cheap metal or alloy, the use amount of the scarce tantalum resource is greatly reduced, and the cost is greatly reduced.
The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. The composite wire material for the anode lead of the tantalum capacitor is characterized by comprising:
the core body is made of other metals except pure tantalum, tantalum alloy or other metal alloys; and
and the tantalum metal layer is coated on the outer surface of the core body.
2. The composite wire for the anode lead of a tantalum capacitor as claimed in claim 1, wherein when the tantalum metal layer is made of tantalum-niobium alloy, the content of tantalum is more than 50% and the sum of the contents of tantalum and niobium is more than 95%; when the tantalum metal layer is made of other alloys except tantalum-niobium alloy, the content of tantalum is more than 95%.
3. The composite wire for a tantalum capacitor anode lead according to claim 1, wherein the cross section of the composite wire for a tantalum capacitor anode lead is circular, elliptical or polygonal.
4. The composite wire for an anode lead of a tantalum capacitor as claimed in claim 1, wherein the ratio of the cross-sectional area of the tantalum metal layer to the cross-sectional area of the composite wire for an anode lead of a tantalum capacitor is in the range of 1% to 80%; preferably 1 to 50%.
5. The composite wire for the anode lead of the tantalum capacitor as claimed in claim 4, wherein the cross section of the composite wire is in an axisymmetric shape, the longest axis is not more than 3.0mm, and the shortest axis is not less than 0.1 mm.
6. The composite wire for a tantalum capacitor anode lead according to claim 1, wherein the material of the core is one or more selected from the group consisting of niobium, zirconium, tungsten, molybdenum, titanium, nickel, iron, copper, aluminum, magnesium, cobalt and alloys thereof.
7. A tantalum capacitor comprising an anode lead, wherein the anode lead is manufactured from the composite wire material for an anode lead of a tantalum capacitor as claimed in any one of claims 1 to 6.
8. A method for producing a composite wire for an anode lead of a tantalum capacitor as claimed in any one of claims 1 to 6, comprising the steps of:
s1, providing a core body; and
and S2, coating a tantalum metal layer on the outer surface of the core body to obtain the composite wire for the anode lead of the tantalum capacitor.
9. The method for preparing the tantalum capacitor anode lead wire according to claim 8, wherein the step of processing the composite wire material for the tantalum capacitor anode lead wire to a required size by one or more of extrusion, rolling, swaging and drawing is further included after the step of S2.
10. The method of claim 8, wherein the coating of the tantalum metal layer on the outer surface of the core body in S2 is performed by powder metallurgy, welding coating, explosion cladding, pipe cladding, fusion casting cladding or vapor deposition.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
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CN202010351049.7A CN111524707B (en) | 2020-04-28 | 2020-04-28 | Composite wire material for anode lead of tantalum capacitor and preparation method thereof |
PCT/CN2020/121951 WO2021218058A1 (en) | 2020-04-28 | 2020-10-19 | Composite wire for anode lead of tantalum capacitor, and preparation method |
JP2022553607A JP2023516457A (en) | 2020-04-28 | 2020-10-19 | Composite wire for anode lead wire of tantalum capacitor and manufacturing method |
MX2022013062A MX2022013062A (en) | 2020-04-28 | 2020-10-19 | Composite wire for anode lead of tantalum capacitor, and preparation method. |
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CN202010351049.7A CN111524707B (en) | 2020-04-28 | 2020-04-28 | Composite wire material for anode lead of tantalum capacitor and preparation method thereof |
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CN111524707A true CN111524707A (en) | 2020-08-11 |
CN111524707B CN111524707B (en) | 2022-07-08 |
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JP (1) | JP2023516457A (en) |
CN (1) | CN111524707B (en) |
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WO2021218058A1 (en) * | 2020-04-28 | 2021-11-04 | 北京安邦特资源技术有限公司 | Composite wire for anode lead of tantalum capacitor, and preparation method |
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JPH05228527A (en) * | 1992-02-24 | 1993-09-07 | Toshiba Corp | High melting metal composite wire |
CN111524707B (en) * | 2020-04-28 | 2022-07-08 | 北京安邦特资源技术有限公司 | Composite wire material for anode lead of tantalum capacitor and preparation method thereof |
-
2020
- 2020-04-28 CN CN202010351049.7A patent/CN111524707B/en active Active
- 2020-10-19 MX MX2022013062A patent/MX2022013062A/en unknown
- 2020-10-19 WO PCT/CN2020/121951 patent/WO2021218058A1/en active Application Filing
- 2020-10-19 JP JP2022553607A patent/JP2023516457A/en active Pending
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US4674009A (en) * | 1985-12-23 | 1987-06-16 | Supercon, Inc. | Tantalum capacitor lead wire |
JPH0442520A (en) * | 1990-06-08 | 1992-02-13 | Hitachi Aic Inc | Solid electrolytic capacitor made of tantalum |
JPH06291000A (en) * | 1993-04-02 | 1994-10-18 | Shinko Metal Prod Kk | Lead wire for tantalum capacitor |
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Also Published As
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WO2021218058A1 (en) | 2021-11-04 |
JP2023516457A (en) | 2023-04-19 |
MX2022013062A (en) | 2022-12-08 |
CN111524707B (en) | 2022-07-08 |
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