CN111521885A - Non-interference electrical equipment transient electric field distribution measuring method - Google Patents

Non-interference electrical equipment transient electric field distribution measuring method Download PDF

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CN111521885A
CN111521885A CN202010117694.2A CN202010117694A CN111521885A CN 111521885 A CN111521885 A CN 111521885A CN 202010117694 A CN202010117694 A CN 202010117694A CN 111521885 A CN111521885 A CN 111521885A
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measuring
thickness
electric field
electrode
film
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CN111521885B (en
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杜伯学
梁虎成
李进
王泽华
张程
冉昭玉
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Tianjin University
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Tianjin University
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R29/00Arrangements for measuring or indicating electric quantities not covered by groups G01R19/00 - G01R27/00
    • G01R29/12Measuring electrostatic fields or voltage-potential
    • G01R29/14Measuring field distribution

Abstract

The invention discloses a non-interference electrical equipment transient electric field distribution measuring method.A measuring system based on the method is composed of a sensor and an external measuring circuit, and then the charging and discharging current of each measuring position is converted into the electric field intensity. Firstly, a sensor preparation process comprises the following steps: firstly, coating a polypropylene film with the thickness of micron order on the surface of an electrode, and placing a mask plate; then, plating a gold measuring electrode with the thickness of nanometer level on the surface of the PP film by using a magnetron sputtering method for measuring charge and discharge current; finally, removing the mask, and covering the surface of the electrode with a high-dielectric barium strontium titanate film with the thickness of micron by using a magnetron sputtering method; second, the external measurement circuit design. The time domain waveform and the spatial distribution of the transient electric field are accurately measured.

Description

Non-interference electrical equipment transient electric field distribution measuring method
Technical Field
The invention belongs to the technical field of transient electric field distribution measurement, and relates to a non-interference electric equipment transient electric field distribution measurement method.
Background
With the development of economy and the increase of power demand, the scale of a power transmission system is continuously enlarged, and the use number and voltage class of various electrical equipment are continuously increased. In the operation process, the distribution of an internal electric field is distorted due to the undetectable factors such as equipment insulation aging, mechanical damage and impurity particles, so that accidents such as flashover and insulation breakdown are caused, and the safe and reliable operation of a power system is seriously threatened. The invention provides a method for measuring electric field distribution of non-interference electrical equipment, which can not interfere the electric field distribution of the equipment and can accurately realize the measurement of transient electric field distribution. The invention can realize the on-line monitoring of the electric field of the electrical equipment, take measures in advance and avoid the occurrence of insulation faults.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provide a non-interference method for measuring the transient electric field distribution of electrical equipment.
The technical scheme of the invention is a non-interference electrical equipment transient electric field distribution measuring method, a measuring system based on the method is composed of a sensor and an external measuring circuit, and then the charging and discharging current of each measuring position is converted into the electric field intensity by using the following formula:
Figure BDA0002392003180000011
wherein, I (t) is charge-discharge current in time domain; q (t ═ 0) is the initial charge amount; siIs the area of the ith measurement electrode;0is a vacuum dielectric constant;ris the relative dielectric constant of the insulator; eav iAverage electric field intensity of the ith measurement point;
1) the sensor preparation process comprises the following steps: firstly, coating a polypropylene film with the thickness of micron order on the surface of an electrode, and placing a mask plate;
then, plating a gold measuring electrode with the thickness of nanometer level on the surface of the PP film by using a magnetron sputtering method for measuring charge and discharge current;
finally, removing the mask, and covering the surface of the electrode with a high-dielectric barium strontium titanate film with the thickness of micron by using a magnetron sputtering method;
2) external measurement circuit design
The external measuring circuit mainly comprises a parallel resistor and an oscilloscope, and is connected with 6 pairs of measuring electrodes through 6 single-pole double-throw switches;
the charging and discharging current flows through the parallel resistor and is converted into a voltage waveform signal on the oscilloscope.
The value of the parallel resistance value ensures that the time constant of the measuring system is about 10 times smaller than the rising/falling edge time of the measured waveform.
The thickness of the polypropylene film of the invention is 50 μm, the spacing between adjacent electrodes is 1mm, and the thickness of the measuring electrode is 100 nm.
The thickness of the barium strontium titanate is 2 mu m.
The invention takes power frequency alternating current and lightning pulse voltage as examples, the rising edge time of the power frequency alternating current and the lightning pulse voltage is 5ms and 1.2 mus respectively, and the optimal parallel resistance value is 1k omega and 1M omega respectively.
Advantageous effects
The method can accurately measure the time domain waveform and the spatial distribution of the transient electric field. Fig. 5 shows the time domain voltage, current and electric field waveform at a certain measurement point, and the measured electric field waveform is not distorted compared to the applied voltage waveform. Fig. 6 shows a normalized curve of the electric field distribution on the surface of the electrode at a certain time, which is highly consistent with the theoretical calculation result of the finite element.
Drawings
Fig. 1 shows a simplified gas-solid insulation combined system model of electrical equipment.
FIG. 2 shows a sensor preparation process.
Fig. 3 is a schematic diagram showing the connection of an external measuring circuit to the sensor.
Fig. 4 shows the time constant of the measurement system versus the parallel resistance value.
Fig. 5 shows the time domain voltage, current and electric field waveforms at a certain measurement point.
Fig. 6 shows a normalized curve of the electric field distribution on the surface of the electrode.
Detailed Description
The invention is further described below with reference to the accompanying drawings.
A gas-solid combined insulation system composed of a circular truncated cone insulator and a parallel flat plate electrode is taken as a prototype (shown in figure 1), and the method aims to provide an interference-free method for measuring transient electric field distribution of electrical equipment, realize online monitoring of electric field distribution in the electrical equipment, take measures in advance and avoid insulation faults.
The measuring system of the invention consists of a sensor and an external measuring circuit, and then converts the charge-discharge current of each measuring position into the electric field intensity by using the following formula:
Figure BDA0002392003180000021
wherein, I (t) is charge-discharge current in time domain; q (t ═ 0) is the initial charge amount; siIs the area of the ith measurement electrode;0is a vacuum dielectric constant;ris the relative dielectric constant of the insulator; eav iIs the average electric field strength of the ith measurement point.
1) Sensor preparation
The preparation process of the sensor is shown in fig. 2, and can be divided into two steps. Firstly, coating a polypropylene (PP) film with the thickness of micron order on the surface of an electrode, and placing a mask plate; then, plating a gold (Au) measuring electrode with the thickness of nanometer level on the surface of the PP film by using a magnetron sputtering method for measuring charge and discharge current; and finally, removing the mask, and covering a high dielectric barium strontium titanate (CCTO) film with the thickness of micrometer on the surface of the electrode by using a magnetron sputtering method to eliminate the electric field concentration phenomenon at the edge of the measuring electrode. Fig. 2(d) shows a photograph of an electrode real object with a sensor, in order to simplify the process, only 6 pairs of measuring electrodes (except for the electrode 1, the electrodes 2-6 are both composed of two semicircular rings) are prepared, and 11 connecting terminals are reserved for connecting with an external measuring circuit.
2) External measurement circuit design
Fig. 3 is a schematic diagram showing the connection of an external measuring circuit to the sensor. The external measuring circuit mainly comprises a parallel resistor and an oscilloscope, and is connected with 6 pairs of measuring electrodes through 6 single-pole double-throw switches. If the charging and discharging current of the ith electrode needs to be measured, the single-pole double-throw switch of the ith path is only required to be switched to the end of the oscilloscope, and the other 5 paths are switched to the grounding end. The charging and discharging current flows through the parallel resistor and is converted into a voltage waveform signal on the oscilloscope. For different measurement waveforms, a proper parallel resistance value needs to be selected so as not to distort the time domain waveform.
Fig. 4 shows the relationship between the time constant of the measurement system and the parallel resistance value, and the larger the parallel resistance, the larger the time constant of the measurement system, the higher the signal-to-noise ratio, but the lower the sensitivity. In order to ensure the signal-to-noise ratio and the sensitivity simultaneously, the value of the parallel resistance value should ensure that the time constant of the measuring system is about 10 times smaller than the rising/falling edge time of the measured waveform.
1. The smaller the thickness of the polypropylene film used for preparing the sensor, the smaller the gap size between adjacent measuring electrodes, and the smaller the electric field distortion caused by the gap size. In this example, the thickness of the polypropylene film was 50 μm, the spacing between adjacent electrodes was 1mm, and the thickness of the electrodes was measured to be 100 nm.
2. The barium titanate film is used for eliminating electric field distortion caused by electrode edge effect, the electric field homogenization effect is not obvious when the thickness is too small, and short circuit can be formed when the thickness is too large. In this example, the optimum thickness of barium strontium titanate is 2 μm.
3. Taking power frequency alternating current and lightning pulse voltage as examples, the rising edge time of the alternating current and the lightning pulse voltage is 5ms and 1.2 mus respectively, and the optimal parallel resistance value is 1k omega and 1M omega respectively.
4. In order to further improve the measurement accuracy, the size of the measuring electrodes can be reduced, the number of the measuring electrodes can be increased, and the measuring electrodes of the sensor can be designed into an array mode.
5. In order to realize automatic measurement and data acquisition, a single-pole double-throw switch can be changed into a multi-path relay control switch board, an oscilloscope is changed into a precision voltmeter and is externally connected with an external data acquisition card, and a computer is used for carrying out data post-processing to realize the construction and timing refresh of the electric field distribution of the electrical equipment.

Claims (6)

1. A non-interference electrical equipment transient electric field distribution measuring method is characterized in that a measurement system based on the method is composed of a sensor and an external measurement circuit, and then charge and discharge current of each measurement position is converted into electric field intensity by using the following formula:
Figure FDA0002392003170000011
wherein, I (t) is charge-discharge current in time domain; q (t ═ 0) is the initial charge amount; siIs the area of the ith measurement electrode;0is a vacuum dielectric constant;ris the relative dielectric constant of the insulator; eav iAverage electric field intensity of the ith measurement point;
1) the sensor preparation process comprises the following steps:
firstly, coating a polypropylene film with the thickness of micron order on the surface of an electrode, and placing a mask plate;
then, plating a gold measuring electrode with the thickness of nanometer level on the surface of the PP film by using a magnetron sputtering method for measuring charge and discharge current;
finally, removing the mask, and covering the surface of the electrode with a high-dielectric barium strontium titanate film with the thickness of micron by using a magnetron sputtering method;
2) external measurement circuit design
The external measuring circuit mainly comprises a parallel resistor and an oscilloscope, and is connected with 6 pairs of measuring electrodes through 6 single-pole double-throw switches;
the charging and discharging current flows through the parallel resistor and is converted into a voltage waveform signal on the oscilloscope.
2. The method according to claim 1, wherein the parallel resistance values ensure that the time constant of the measurement system is about 10 times shorter than the rising/falling edge time of the measured waveform.
3. The method according to claim 1, wherein the thickness of the polypropylene film is 50 μm, the spacing between adjacent electrodes is 1mm, and the thickness of the measuring electrode is 100 nm.
4. The method according to claim 1, wherein the thickness of the barium strontium titanate is 2 μm.
5. The method according to claim 1, wherein the thickness of the barium strontium titanate is 2 μm.
6. The method according to claim 1, wherein the power frequency ac voltage and the laser pulse voltage have rising edge times of 5ms and 1.2 μ s, respectively, and the optimal parallel resistance values are 1k Ω and 1M Ω, respectively.
CN202010117694.2A 2020-02-25 2020-02-25 Non-interference electrical equipment transient electric field distribution measuring method Expired - Fee Related CN111521885B (en)

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07181124A (en) * 1993-09-17 1995-07-21 Applied Materials Inc Equipment and method for particle detection by discharge measurement
CN103091541A (en) * 2012-12-14 2013-05-08 中国电力科学研究院 Intelligent substation secondary transient voltage measuring device and measuring method
CN205581192U (en) * 2016-04-27 2016-09-14 国网四川省电力公司电力科学研究院 High pressure current conversion station direct current field transient voltage monitoring devices
CN107918062A (en) * 2017-12-20 2018-04-17 中国电力科学研究院有限公司 A kind of transient state spatial electronic field measurement system and method for wide frequency domain
CN109411533A (en) * 2018-10-30 2019-03-01 常州工学院 The preparation method of high dielectric constant grid amorphous oxide IGZO thin film transistor (TFT)

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07181124A (en) * 1993-09-17 1995-07-21 Applied Materials Inc Equipment and method for particle detection by discharge measurement
CN103091541A (en) * 2012-12-14 2013-05-08 中国电力科学研究院 Intelligent substation secondary transient voltage measuring device and measuring method
CN205581192U (en) * 2016-04-27 2016-09-14 国网四川省电力公司电力科学研究院 High pressure current conversion station direct current field transient voltage monitoring devices
CN107918062A (en) * 2017-12-20 2018-04-17 中国电力科学研究院有限公司 A kind of transient state spatial electronic field measurement system and method for wide frequency domain
CN109411533A (en) * 2018-10-30 2019-03-01 常州工学院 The preparation method of high dielectric constant grid amorphous oxide IGZO thin film transistor (TFT)

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
B.X.DU等: ""Interfacial E-Field Self-Regulating Insulator Considered for DC GIL Application"", 《IEEE TRANSACTIONS ON DIELECTRICS AND ELECTRICAL INSULATION》 *
谢施君等: ""基于集成光学电场传感器的过电压测量技术"", 《高电压技术》 *

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