CN111509390A - ISM frequency band microstrip array antenna with negative magnetic conductivity material and manufacturing method - Google Patents

ISM frequency band microstrip array antenna with negative magnetic conductivity material and manufacturing method Download PDF

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Publication number
CN111509390A
CN111509390A CN202010318447.9A CN202010318447A CN111509390A CN 111509390 A CN111509390 A CN 111509390A CN 202010318447 A CN202010318447 A CN 202010318447A CN 111509390 A CN111509390 A CN 111509390A
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China
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microstrip
dielectric substrate
array antenna
substrate
feed network
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靳钊
蔺琛智
郭晨
李璐
高尧
贺之莉
薛晶晶
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Changan University
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Changan University
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01QANTENNAS, i.e. RADIO AERIALS
    • H01Q5/00Arrangements for simultaneous operation of antennas on two or more different wavebands, e.g. dual-band or multi-band arrangements
    • H01Q5/50Feeding or matching arrangements for broad-band or multi-band operation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01QANTENNAS, i.e. RADIO AERIALS
    • H01Q15/00Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
    • H01Q15/0006Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
    • H01Q15/0086Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices having materials with a synthesized negative refractive index, e.g. metamaterials or left-handed materials

Abstract

The invention discloses an ISM frequency band microstrip array antenna with a negative magnetic conductivity material and a manufacturing method thereof, wherein the ISM frequency band microstrip array antenna comprises a first dielectric substrate, a second dielectric substrate and an SMA coaxial joint; an air cavity is arranged between the first medium substrate and the second medium substrate; the center of the first dielectric substrate is hollow, an open resonant ring array is arranged on the upper surface of the periphery of the hollow center, and a microstrip feeder line, a plurality of U-shaped groove microstrip antennas and a feed network are arranged on the upper surface of the second dielectric substrate; the U-shaped groove microstrip antennas are connected with one end of the feed network, and the other end of the feed network is connected with the SMA coaxial connector through a microstrip feeder line; and a metal grounding plate is arranged on the lower surface of the second dielectric substrate. The open resonant rings are arranged periodically to form the negative magnetic conductivity material, so that the time-varying magnetic field of electromagnetic waves radiated on two sides is inhibited, the half-power beam width of far-field radiation is effectively reduced, and the gain of forward radiation is improved; a plurality of resonance points are generated by using a U-shaped groove microstrip antenna, and the resonance points are connected to realize a wide frequency band; the bandwidth and the gain of the microstrip array antenna can be effectively improved.

Description

ISM frequency band microstrip array antenna with negative magnetic conductivity material and manufacturing method
Technical Field
The invention belongs to the field of microstrip antennas, and relates to an ISM frequency band microstrip array antenna with a negative magnetic conductivity material and a manufacturing method thereof.
Background
The radio frequency antenna plays a very critical role in the communication process as a key part of wireless communication, and the microstrip patch antenna is widely concerned by academic and engineering technical fields due to the characteristics of low profile, light weight, simple manufacture, easy integration with an integrated circuit and the like. Microstrip patch antennas are widely used in many communication antennas and radar systems. However, the microstrip antenna has some very obvious disadvantages in practical application, such as narrower bandwidth, lower gain, and lower radiation efficiency, which greatly limit the application and popularization of the microstrip patch antenna in engineering.
In the field of current internet of things devices, antennas in the 2.45GHz ISM band are widely used, and since wireless communication in the band is open to industrial, scientific and medical institutions and does not need to be licensed, the internet of things devices in the band have a very large demand for high-performance radio frequency antennas.
The microstrip antenna is widely applied to the internet of things equipment due to the factors of light weight, simple processing and the like. However, the bandwidth and gain of the microstrip antenna in the 2.45GHz ISM band are low, which greatly limits the popularization and application of the microstrip antenna in the band. Although the microstrip antenna can be changed into an array antenna to improve the gain through microstrip line array expansion, the edge impedance of the traditional rectangular microstrip patch antenna is large, so that multistage matching can occur in an impedance matching network, the impedance matching network is too complex, and the popularization difficulty in the aspect of engineering application is large.
Disclosure of Invention
The invention aims to overcome the defects of low bandwidth and gain and complicated impedance matching network of the 2.45GHz ISM frequency band microstrip antenna in the prior art, and provides an ISM frequency band microstrip array antenna with a negative magnetic conductivity material and a manufacturing method thereof.
In order to achieve the purpose, the invention adopts the following technical scheme to realize the purpose:
on one hand, the invention discloses an ISM frequency band microstrip array antenna with a negative magnetic conductivity material, which comprises a first dielectric substrate, a second dielectric substrate and an SMA coaxial joint; the first medium substrate is connected with the second medium substrate and positioned above the second medium substrate, and an air cavity is arranged between the first medium substrate and the second medium substrate; the first medium substrate is provided with a rectangular through hole, the upper surface of the first medium substrate is provided with an opening resonance ring array, the opening resonance ring array comprises a plurality of opening resonance rings which are arranged periodically, the opening resonance rings are circular opening resonance rings, the circular opening resonance rings comprise first opening circular rings and second opening circular rings which are nested in the first opening circular rings, and the opening positions of the first opening circular rings and the second opening circular rings are symmetrically arranged; the upper surface of the second dielectric substrate is provided with a microstrip feeder line, a plurality of U-shaped groove microstrip antennas and a feed network; the U-shaped groove microstrip antennas are connected with one end of the feed network, and the other end of the feed network is connected with the SMA coaxial connector through a microstrip feeder line; and a metal grounding plate is arranged on the lower surface of the second dielectric substrate.
The ISM frequency band microstrip array antenna with the negative magnetic conductivity material is further improved in that:
the first dielectric substrate is connected with the second dielectric substrate through a plurality of plastic screws.
The height of the air cavity is 0.5-0.6 times of the air wavelength of the resonant frequency.
The first dielectric substrate is positioned right above the second dielectric substrate.
The first dielectric substrate and the second dielectric substrate are both epoxy resin substrates, the open resonant ring is made of copper, and the metal grounding plate is made of copper.
Four U-shaped groove microstrip antennas are provided, and the feed network is a one-to-four feed network; one end of a one-to-four feed network is provided with four feed lines, and each feed line is connected with the center of one side of the bottom of a U-shaped groove of one U-shaped groove microstrip antenna; the other end of the one-to-four feed network is connected with the microstrip feeder line.
The microstrip feeder line is a 50 ohm microstrip feeder line; the SMA coaxial connector is a 50 ohm SMA coaxial connector.
In another aspect of the present invention, a method for manufacturing an ISM band microstrip array antenna with a negative magnetic permeability material comprises the following steps:
s1: forming a rectangular through hole on a first dielectric substrate, coating copper on the upper surface of the first dielectric substrate, and etching a plurality of opening resonance rings which are arranged periodically on the upper surface of the first dielectric substrate by a circuit board etching technology;
s2: coating copper on the upper surface of the second dielectric substrate, and integrally etching a plurality of U-shaped groove array antennas and a feed network on the upper surface of the second dielectric substrate by a circuit board etching technology; coating copper on the lower surface of the second dielectric substrate to form a metal grounding plate;
s3: one end of a microstrip line is connected with a feed network, and the other end of the microstrip line is used as a feed point of high-frequency current and is provided with an SMA coaxial connector;
s4: and connecting the first dielectric substrate and the second dielectric substrate, and reserving an air cavity between the first dielectric substrate and the second dielectric substrate.
Compared with the prior art, the invention has the following beneficial effects:
according to the ISM frequency band microstrip array antenna with the negative magnetic conductivity material, the feed network feeds the U-shaped groove microstrip antennas, the feed network and the U-shaped groove microstrip antennas form an area array antenna, and the array arrangement mode can effectively improve the radiation directivity coefficient. Meanwhile, a U-shaped groove is loaded on the common micro-strip rectangular patch antenna to form the U-shaped groove micro-strip antenna, the flowing path and the flowing length of high-frequency current on the micro-strip rectangular patch antenna are changed, a plurality of resonance points can be generated, and the wide frequency band can be realized by mutually connecting the resonance points. In addition, a rectangular through hole with a proper area is cut in the center of the first medium substrate, so that the center is empty, and the design of a central opening is adopted, so that the lateral radiation can be effectively reduced under the condition of not influencing the forward radiation; meanwhile, circular open resonance rings are periodically arranged around the through hole, the open resonance rings are in a double-circle-center nested mode, the action principle of the open resonance rings is that when electromagnetic waves parallelly enter the open resonance rings, the direction of a wave vector magnetic field can be perpendicular to the rings, and the open resonance rings generate strong magnetic resonance to generate a negative magnetic conductivity phenomenon at the moment, so that time-varying magnetic fields of the electromagnetic waves radiated on two sides can be restrained, and further the propagation of lateral electromagnetic waves is restrained, so that the half-power beam width of far-field radiation can be effectively reduced, the gain of forward radiation is improved, and a circular structure in a large circular nested mode can generate stronger magnetic resonance response, so that the negative magnetic conductivity phenomenon of the first medium substrate can be easily realized on a 2.45GHz ISM frequency band, and the lateral radiation is restrained. In conclusion, the microstrip array antenna is simple in structure, and the bandwidth and the gain of the microstrip array antenna can be effectively improved.
Furthermore, the first dielectric substrate and the second dielectric substrate are connected through a plurality of plastic screws with low dielectric constants, so that radiation interference of the first dielectric substrate and the second dielectric substrate to the antenna is reduced.
Furthermore, the height of the air cavity is set to be 0.5-0.6 of the air wavelength of the resonant frequency, and the magnetic resonance phenomenon is strongest.
Furthermore, the opening resonant ring is a circular opening resonant ring, and a circular structure in a large circular nested form and a small circular nested form can generate stronger magnetic resonance response, so that the negative magnetic permeability phenomenon of the first medium substrate can be easily realized on the 2.45GHz ISM frequency band, and the lateral radiation is inhibited.
Further, the microstrip feeder line is a 50 ohm microstrip feeder line; the SMA coaxial connector is a 50 ohm SMA coaxial connector, which makes the microstrip array antenna easily matched with a 50 ohm industry standard feed system.
According to the manufacturing method of the ISM frequency band microstrip array antenna with the negative magnetic conductivity material, the first dielectric substrate and the second dielectric substrate are designed independently and then assembled, and compared with the overall design, the method can greatly reduce the difficulty and period of the design. Meanwhile, the manufacturing method of the planar array antenna which is designed on the first dielectric substrate and is constructed by the U-shaped groove microstrip antenna is a circuit board etching technology, is simple to process and manufacture, is easy for large-scale production, and can effectively reduce the cost.
Drawings
Fig. 1 is a schematic structural diagram of a microstrip array antenna according to the present embodiment;
FIG. 2 is a top view of a negative permeability material of this embodiment;
FIG. 3 is a top view of a one-to-four feeding network and four connected U-shaped slot microstrip antennas of the present embodiment;
fig. 4 is a top view of the U-shaped slot microstrip antenna of the present embodiment;
FIG. 5 is a schematic diagram of a ring resonator with a circular opening according to the present embodiment;
fig. 6 is a schematic diagram illustrating the comparison of return loss between the present embodiment and the microstrip array antenna of the microstrip antenna without loading the U-shaped slot;
FIG. 7 is a comparison diagram of return loss of the microstrip array antenna of the present embodiment and that without loading NPM;
FIG. 8 is a schematic diagram showing the comparison of the gain of the H-plane of the microstrip array antenna of the present embodiment and that of the microstrip array antenna without loading NPM;
fig. 9 is a schematic diagram of the comparison between the H-plane half-power beam width of the microstrip array antenna of the present embodiment and that of the microstrip array antenna without loading NPM;
fig. 10 is a schematic diagram of the comparison of the E-plane half-power beam width of the microstrip array antenna of the present embodiment and the microstrip array antenna without loading NPM;
fig. 11 is a schematic diagram comparing the H-plane radiation patterns of the microstrip array antenna of this embodiment with those of the microstrip array antenna without loading NPM;
fig. 12 is a schematic diagram comparing the E-plane radiation patterns of the microstrip array antenna of this embodiment with those of the microstrip array antenna without loading NPM.
Wherein: 1-a first dielectric substrate; 2-split resonant ring; 3-plastic screws; 4-an air cavity; 5-a second dielectric substrate; 6-microstrip feed line; 7-U-shaped slot microstrip antenna; 8-feeding network.
Detailed Description
In order to make the technical solutions of the present invention better understood, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that the terms "first," "second," and the like in the description and claims of the present invention and in the drawings described above are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used is interchangeable under appropriate circumstances such that the embodiments of the invention described herein are capable of operation in sequences other than those illustrated or described herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed, but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
The invention relates to an ISM frequency band microstrip array antenna with a negative magnetic conductivity material, which is manufactured by adopting a circuit board etching technology and comprises two parts, namely an array antenna loaded with a U-shaped groove and a microstrip line feed network below the first part. And secondly, etching the periodically arranged metal open-ended resonant ring array 1 on one side of the upper cladding dielectric substrate, and placing the upper side of the antenna as the upper cladding of the antenna.
The invention is described in further detail below with reference to the accompanying drawings:
referring to fig. 1 to 4, the ISM band microstrip array antenna with negative permeability material of the present invention includes a first dielectric substrate 1, an open resonator ring array, a plastic screw 3, an air cavity 4, a second dielectric substrate 5, a microstrip feeder 6, a plurality of U-shaped slot microstrip antennas 7, and a feed network 8.
The first dielectric substrate 1 is positioned right above the second dielectric substrate 5, and the first dielectric substrate and the second dielectric substrate are connected through a plurality of plastic screws 3 with low dielectric constants, so that the radiation interference of the first dielectric substrate to the antenna can be reduced. An air cavity 4 is arranged between the first medium substrate 1 and the second medium substrate 5, wherein the height of the air cavity 4 is 0.5-0.6 times of the air wavelength of the resonance frequency, and when the height of the air cavity 4 is 0.6 times of the air wavelength of the resonance frequency, the magnetic resonance phenomenon is strongest. The first dielectric substrate 1 and the second dielectric substrate 5 can adopt epoxy resin (FR4) substrates, and the substrates are low in price, suitable for large-scale production and capable of completely meeting the requirement of the 2.45GHzISM frequency band.
The plurality of U-shaped groove microstrip antennas 7 and the feed network 8 are located on the upper surface of the second dielectric substrate 5, the plurality of U-shaped groove rectangular patch antennas 7 are connected with each other through the feed network 8, the feed network 8 is connected with one end of the microstrip feed line 6, and the other end of the microstrip feed line 6 is connected with the SMA coaxial connector. A 50 ohm microstrip feed line 6 and a 50 ohm SMA coaxial connector may be provided, and a metal ground plate is provided on the lower surface of the second dielectric substrate 5.
An open resonant ring array is designed on the upper surface of a first dielectric substrate 1, the open resonant ring array comprises a plurality of open resonant rings 2 which are periodically arranged, the open resonant rings 2 adopt circular open resonant rings, the circular open resonant rings comprise first open circular rings and second open circular rings which are nested inside the first open circular rings, and the open positions of the first open circular rings and the second open circular rings are symmetrically arranged; the round nested structure with the large and small round nests and the symmetrical openings can excite stronger magnetic resonance response, can enable the first medium substrate 1 to achieve negative magnetic permeability on the 2.45GHz ISM frequency band, and can inhibit lateral radiation, so that radiation directivity is improved, half-power beam width is reduced, and radiation gain is improved.
The invention also discloses a manufacturing method of the ISM frequency band microstrip array antenna with the negative magnetic permeability material, which comprises the following steps:
s1: cutting a rectangle at the center of the first dielectric substrate 1 to make the center of the rectangle hollow, and then completely coating copper on the upper surface of the dielectric substrate; etching a plurality of circular resonance rings which are arranged periodically on the upper surface of the first dielectric substrate 1 by a circuit board etching technology;
s2: copper is coated on the upper surface of the second dielectric substrate 5, a plurality of U-shaped groove array antennas 7 and a feed network 8 are integrally etched on the upper surface of the second dielectric substrate 5 through a circuit board etching technology, the plurality of U-shaped groove array antennas 7 are all connected with the feed network 8, and the copper is coated on the lower surface of the second dielectric substrate 5 to form a metal grounding plate;
s3: the microstrip line 6 is used as a feed point of high-frequency current, a standard SMA coaxial connector is installed on the feed point and is connected with the feed network 8, and the impedance of the microstrip line 6 is 50 ohms, so that the microstrip line can be well matched with the SMA coaxial connector.
S4: the first dielectric substrate 1 and the second dielectric substrate 5 are connected through a plastic screw 3, and an air cavity 4 with the height of 0.5-0.6 times of the resonant frequency and the air wavelength is reserved between the first dielectric substrate 1 and the second dielectric substrate 5.
The principles of the present invention are explained in detail below:
the metamaterial is a very important scientific research result proposed in the society, is an artificial microstructure material, can generate corresponding response to an external electromagnetic field by designing different structural units, can obtain dielectric constant and magnetic permeability with any size in principle, and is evaluated as one of ten technological breakthroughs in the year 2003 by the American Science journal.
Through the continuous deformation of the metamaterial base structure, a plurality of strange electromagnetic phenomena different from the natural phenomena are discovered. The phenomenon has a very large application prospect in the design of microwave radio frequency devices, and theoretically, the properties of the substrate and the radiation direction graph can be changed through the advantages of reverse design of metamaterials. Therefore, the performance of the antenna can be effectively improved under the condition of not changing the design of the antenna, including improving the radiation gain of the antenna, expanding the bandwidth, reducing the radar scattering cross section (RCS) and the like.
According to the ISM frequency band microstrip array antenna with the negative magnetic conductivity material, the bandwidth expansion is based on the principle of U-shaped groove meander spread spectrum, and the bandwidth is expanded by increasing the flowing length of high-frequency current on the radiation patch and increasing a plurality of resonance points. And the NPM with the central opening is adopted in the cladding of the array antenna, so that the lateral radiation can be effectively reduced under the condition of not influencing the forward radiation, and the gain of the forward radiation is increased. The NPM has less effect on the return loss S11 of the antenna due to the distance from the array antenna of more than half the operating wavelength, so the two parts can be designed separately and then assembled. This approach can greatly reduce the difficulty and cycle of design compared to the overall design.
The NPM cladding can suppress lateral radiation mainly because the cladding can generate strong magnetic resonance at the working frequency point, resulting in a negative magnetic permeability phenomenon: when the wave vector of the electromagnetic wave is parallel to the NPM, the time-varying magnetic field of the wave vector of the electromagnetic wave is perpendicular to the NPM, and the time-varying magnetic field is suppressed, so that the lateral radiation is suppressed; when the wave vector of the electromagnetic wave is perpendicular to the NPM, the time-varying magnetic field of the wave vector is parallel to the NPM. At this time, the electromagnetic wave in the direction is not influenced by the negative permeability effect of the NPM, and can normally propagate.
Therefore, the combination of the U-shaped groove array antenna 7 and the NPM coating can effectively improve the bandwidth and the gain of the microstrip array antenna, and change the disadvantages of narrow bandwidth and low gain of the microstrip array antenna. Meanwhile, the manufacturing method of the U-shaped groove array antenna 7 or the NPM coating is a circuit board etching technology, the processing and manufacturing are simple, the large-scale production is easy, and the cost can be effectively reduced.
Examples
First, specific parameter information in this embodiment is explained:
in this embodiment, four U-shaped slot array antennas 7 are etched, the feed network 8 is a one-in-four feed network, the lengths of the first dielectric substrate 1 and the second dielectric substrate 5 are L s-143.2 mm, the widths of the first dielectric substrate 1 and the second dielectric substrate 5 are Ws-175.7 mm, the dimensions of the rectangular through hole of the first dielectric substrate are L s 1-90.2 mm, and the widths of the Ws 1-129.7 mm, wherein the first dielectric substrate 2 and the second dielectric substrate 5 are epoxy resin (FR4) substrates, the dielectric constant is 4.4, the dielectric loss tangent is tan-0.02, and the thicknesses of the first dielectric substrate 2 and the second dielectric substrate 5 are 1.6mm and 5mm, respectively.
Referring again to fig. 3, the rectangular patch of the U-slot array antenna 7 has a length of L p, a width of Wp, 53.7mm, a distance between center points of two adjacent U-slot array antennas 7 is dy, 82mm, a distance between center points of two adjacent U-slot array antennas 7 is dx, 65mm, a four-feed network includes four first, two second, third, fourth, fifth and sixth feed lines in a direction perpendicular to the direction of the opening of the U-slot array antennas 7, two second feed lines are connected to both ends of the third feed line, two first feed lines are connected to the other ends of the third feed line, the first feed line is connected to the U-slot array antenna 7 at the other end, the fourth feed line is connected to the third feed line at one end, the fifth feed line is connected to the fifth feed line, sixth and fifth feed line 6 at the other end, the first and fifth feed lines are W2, the U-slot array antenna 7 is 27.6mm, the width of the U-slot array antenna 7 is Wp, the third feed line is 673, the third feed line is 27.3 mm, the third feed line is 94 mm, the third feed line is 16, the fifth feed line is 27.3 mm, the third feed line is 27.3 mm, the length of the U-slot array antenna 7 is 3mm, and the fifth feed line is 3mm, the fifth feed line 16 mm, the third feed line is 3mm, the third feed line 16 mm, the fourth feed line is 3mm, the length of the fifth.
Referring to fig. 4, the groove wall width, the groove wall length, the groove bottom width and the groove bottom length of the U-shaped groove array antenna 7 are Fy equal to 1.8mm, C equal to 20.4mm, E equal to 1.8mm and D equal to 28mm, respectively. The parameter information is only a parameter designed in the present embodiment, and is not limited thereto.
Referring again to fig. 5, the radius of the inner ring, the loop width, the gap between the inner ring and the outer ring, the opening of the resonance ring, and the lattice constant (the pitch of the split resonance ring 2) of the split resonance ring 2 are Rs 2.5mm, Cs 1.1mm, ds 0.2m m, gs 1mm, and d 10.2mm, respectively.
Referring to fig. 6, a comparison diagram of return loss of the microstrip array antenna of the present invention and the microstrip antenna without loading the U-shaped slot shows that, compared with the microstrip antenna without loading the U-shaped slot, the bandwidth of the microstrip array antenna is increased by 17%.
Referring to fig. 7, the return loss of the microstrip array antenna of the present invention is compared with that of a microstrip array antenna without loading NPM, and it can be seen from the figure that the NPM has less influence on the microstrip array antenna after the NPM is added.
Referring to fig. 8, the H-plane gain of the microstrip array antenna of the present invention is compared with that of the microstrip array antenna without NPM, and it can be seen that the gain of the microstrip array antenna without NPM is increased by 1 dB.
Referring to fig. 9 and fig. 10, the H-plane and E-plane half-power beam widths of the microstrip array antenna of the present invention are shown compared with those of the microstrip array antenna without NPM loading, respectively, and it can be seen from the figure that the half-power beam widths of the H-plane and the E-plane do not change significantly on the H-plane; the half-power beamwidth of the microstrip array antenna with NPM added to the E-plane is 34 °, 12.7 ° greater than that of the microstrip array antenna without NPM.
Referring to fig. 11 and 12, compared with H-plane and E-plane radiation patterns of a microstrip array antenna without NPM loading, it can be seen that the beam width is reduced and the gain is increased by NPM loading compared with a microstrip array antenna without NPM loading.
The above-mentioned contents are only for illustrating the technical idea of the present invention, and the protection scope of the present invention is not limited thereby, and any modification made on the basis of the technical idea of the present invention falls within the protection scope of the claims of the present invention.

Claims (8)

1. An ISM frequency band microstrip array antenna with a negative magnetic conductivity material is characterized by comprising a first dielectric substrate (1), a second dielectric substrate (5) and an SMA coaxial joint;
the first medium substrate (1) is connected with the second medium substrate (5), the first medium substrate (1) is positioned above the second medium substrate (5), and an air cavity (4) is arranged between the first medium substrate (1) and the second medium substrate (5);
the rectangular through hole is formed in the first dielectric substrate (1), the opening resonant ring array is arranged on the upper surface of the first dielectric substrate (1), the opening resonant ring array comprises a plurality of opening resonant rings (2) which are arranged periodically, the opening resonant rings (2) are circular opening resonant rings, each circular opening resonant ring comprises a first opening circular ring and a second opening circular ring which is embedded in the first opening circular ring, and the opening positions of the first opening circular ring and the second opening circular ring are symmetrically arranged; the upper surface of the second dielectric substrate (5) is provided with a microstrip feeder (6), a plurality of U-shaped groove microstrip antennas (7) and a feed network (8); the U-shaped groove microstrip antennas (7) are connected with one end of a feed network (8), and the other end of the feed network (8) is connected with the SMA coaxial connector through a microstrip feed line (6); and a metal grounding plate is arranged on the lower surface of the second dielectric substrate (5).
2. The ISM band microstrip array antenna with negative permeability material of claim 1, wherein the first dielectric substrate (1) and the second dielectric substrate (5) are connected by a number of plastic screws (3).
3. The ISM band microstrip array antenna with negative permeability material of claim 1, wherein the air cavity (4) has a height of 0.5-0.6 times the air wavelength of the resonant frequency.
4. An ISM band microstrip array antenna with negative permeability material according to claim 1 characterized in that the first dielectric substrate (1) is located directly above the second dielectric substrate (5).
5. The ISM band microstrip array antenna with negative permeability material of claim 1, wherein the first dielectric substrate (1) and the second dielectric substrate (5) are both epoxy substrates, the open ended resonating ring (2) is made of copper, and the metal ground plate is made of copper.
6. The ISM band microstrip array antenna with negative permeability material of claim 1, wherein there are four U-shaped slot microstrip antennas (7), and the feed network (8) is a one-to-four feed network; one end of a one-to-four feed network is provided with four feed lines, and each feed line is connected with the center of one side of the bottom of a U-shaped groove of one U-shaped groove microstrip antenna (7); the other end of the one-to-four feed network is connected with a microstrip feeder (6).
7. The ISM band microstrip array antenna with negative permeability material according to claim 1 characterized in that the microstrip feed line (6) is a 50 ohm microstrip feed line; the SMA coaxial connector is a 50 ohm SMA coaxial connector.
8. A manufacturing method of an ISM frequency band microstrip array antenna with a negative magnetic conductivity material is characterized by comprising the following steps:
s1: forming a rectangular through hole on a first dielectric substrate (1), coating copper on the upper surface of the first dielectric substrate (1), and etching a plurality of open resonant rings (2) which are arranged periodically on the upper surface of the first dielectric substrate (1) by a circuit board etching technology;
s2: coating copper on the upper surface of the second dielectric substrate (5), and integrally etching a plurality of U-shaped groove array antennas (7) and a feed network (8) on the upper surface of the second dielectric substrate (5) through a circuit board etching technology; copper is coated on the lower surface of the second dielectric substrate (5) to form a metal grounding plate;
s3: one end of a microstrip line (6) is connected with a feed network (8), and the other end of the microstrip line is used as a feed point of high-frequency current and is provided with an SMA coaxial joint;
s4: connecting the first medium substrate (1) and the second medium substrate (5), and reserving an air cavity (4) between the first medium substrate (1) and the second medium substrate (5).
CN202010318447.9A 2020-04-21 2020-04-21 ISM frequency band microstrip array antenna with negative magnetic conductivity material and manufacturing method Pending CN111509390A (en)

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