CN111509076B - Self-driven photoelectric detector with low dark current and preparation method thereof - Google Patents
Self-driven photoelectric detector with low dark current and preparation method thereof Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title abstract description 5
- 239000000463 material Substances 0.000 claims abstract description 57
- 229910003090 WSe2 Inorganic materials 0.000 claims abstract description 33
- 238000000034 method Methods 0.000 claims abstract description 26
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 25
- 230000005641 tunneling Effects 0.000 claims abstract description 21
- 239000004065 semiconductor Substances 0.000 claims abstract description 18
- 238000004519 manufacturing process Methods 0.000 claims abstract description 16
- 238000012546 transfer Methods 0.000 claims abstract description 7
- 239000010931 gold Substances 0.000 claims description 27
- 239000000758 substrate Substances 0.000 claims description 24
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 22
- 229910052751 metal Inorganic materials 0.000 claims description 22
- 239000002184 metal Substances 0.000 claims description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 14
- 229910052710 silicon Inorganic materials 0.000 claims description 14
- 239000010703 silicon Substances 0.000 claims description 14
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 11
- 229910052737 gold Inorganic materials 0.000 claims description 11
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 10
- 238000000231 atomic layer deposition Methods 0.000 claims description 8
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 claims description 8
- 239000007788 liquid Substances 0.000 claims description 8
- 238000002161 passivation Methods 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 5
- 239000007772 electrode material Substances 0.000 claims description 5
- 230000008569 process Effects 0.000 claims description 5
- 229910052723 transition metal Inorganic materials 0.000 claims description 5
- -1 transition metal chalcogenide Chemical class 0.000 claims description 5
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- 238000005566 electron beam evaporation Methods 0.000 claims description 4
- 239000002135 nanosheet Substances 0.000 claims description 4
- 229920002120 photoresistant polymer Polymers 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 4
- 238000001704 evaporation Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 56
- 238000001514 detection method Methods 0.000 description 6
- 230000009286 beneficial effect Effects 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 238000012544 monitoring process Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000012984 biological imaging Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000000779 depleting effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052961 molybdenite Inorganic materials 0.000 description 1
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 description 1
- 229910052982 molybdenum disulfide Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 108090000623 proteins and genes Proteins 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
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Abstract
The invention discloses a self-driven photoelectric detector with low dark current and a preparation method thereof, belonging to the field of semiconductor devices and manufacturing thereof. Graphene-WSe prepared by deterministic dry transfer method2The Au structure device has good photovoltaic property, the Fermi level pinning effect easily caused by directly evaporating the electrode on the two-dimensional material by the traditional method is avoided, and the device has good photoresponse. Due to two heterojunctions WSe of the device2-Graphene junction and WSe2The Au junction has asymmetry, the device has self-driving characteristics, and can work under zero bias, and the dark current is almost negligible; in addition, due to the introduction of the tunneling layer and the trapping layer, the dark current can be controlled to be a very low order of magnitude even when the device is operated under an external bias.
Description
Technical Field
The invention relates to the field of semiconductor devices and manufacturing thereof, in particular to a self-driven photoelectric detector with low dark current and a preparation method thereof.
Background
The photoelectric detector is a detection device for converting optical signals into electric signals, and has wide and important application in military and civil fields. In military affairs, the method is mainly used for guidance, radar monitoring, optical communication and other aspects; it also has important application in the aspects of camera shooting, infrared detection, temperature measurement and the like in civil use.
Currently, silicon-based photodetectors are the mainstay behind commercial image sensors embedded in cell phones, computers and digital cameras, and in particular, PN junction-based photodiodes are becoming more and more popular in consumer electronics products due to their compatibility of fabrication processes with mainstream Complementary Metal Oxide Semiconductor (CMOS) technology. However, the silicon semiconductor has a relatively large forbidden band width, and thus it is difficult to detect the infrared band. Therefore, the discovery of some two-dimensional materials has made a significant breakthrough in the development of photodetectors. The good optical, electrical and thermal properties and the good mechanical properties of the two-dimensional material make the two-dimensional material become a good basic material for manufacturing the photoelectric detector, and the detection waveband and the detection performance of the photoelectric detector can be adjusted by changing the thickness of the two-dimensional material and constructing a heterojunction between the two-dimensional materials. Therefore, the two-dimensional material has great development potential in the field of photoelectric detection.
In order to meet the application of the photoelectric detector in the fields of biological imaging, environmental monitoring and the like, photoelectric devices based on some novel semiconductor materials and some novel structures begin to emerge, and particularly with the discovery of graphene and some two-dimensional layered materials, the research on the photoelectric detector is researched
Pushing a new wave. The almost whole spectrum required by photoelectric detection is covered from zero-band-gap graphene, transition metal chalcogenide with adjustable band gap and hexagonal boron nitride (h-BN) with the band gap width of 6 eV. With the development and innovation of some material growth and transfer methods, the integration of large-area two-dimensional material devices and silicon CMOS integrated circuits is made possible, and in addition, the absorption rate of photons by the two-dimensional material is far higher than that of silicon, which enables most of the light absorption to be realized even on very thin two-dimensional materials, which means the potential integration of a thin two-dimensional material layer with the underlying silicon CMOS processing circuits on a high-performance image sensor.
In the past decade, based on different two-dimensional materials such as Graphene, MoS2、WSe2Etc. have been demonstrated to have excellent performance. Based on single layer WSe2The p-n junction photoelectric detector shows obvious photovoltaic effect, and different two-dimensional materials are combined together to form the heterojunction structure photoelectric detector with obvious photovoltaic effect due to the fact that different two-dimensional materials have different carrier polarities. Under the condition of no external bias voltage, a built-in electric field is formed due to the existence of a potential barrier in the self structure, and the property of generating photocurrent due to the drift of photogenerated carriers under the illumination condition is called self-driving, and the photoelectric detector is called a self-driving type photoelectric detector. Since the self-driven device does not need external voltage orEnergy supply can work, so the system is indispensable in the application fields of outdoor environment sensing of wireless sensor networks, wearable medical monitoring and the like.
In addition, the self-driven type photodetector does not need to operate under an external bias condition, so that it has extremely low dark current.
Disclosure of Invention
The present invention is directed to solving the above problems, and provides a self-driven photodetector with low dark current and a method for manufacturing the same.
In order to achieve the purpose, the invention adopts the following technical scheme:
a self-driven photodetector with low dark current comprises a substrate, a two-dimensional semiconductor material sheet transferred on the substrate, two metal electrodes, a tunneling layer and a trapping layer, wherein the two metal electrodes are respectively deposited on two sides of the substrate, the tunneling layer is positioned on the top of the two-dimensional semiconductor material sheet, and the trapping layer is positioned above the tunneling layer; said two-dimensional semiconductor material flakes are respectively transition metal chalcogenide WSe2And graphene, wherein the tunneling layer is made of HfO (high-k oxide)2The trapping layer is made of Si3N4。
Further, the two metal electrodes were formed using 50nmAu/10 nmTi.
The other technical scheme adopted by the invention for solving the technical problem is as follows:
a method of fabricating a self-driven photodetector having a low dark current, comprising the steps of:
s1, preparing a two-dimensional material;
s2, preparing an electrode material on the substrate;
s3, constructing a heterojunction;
s4, preparing a tunneling layer and a trapping layer on the heterojunction material;
s5 Graphene-WSe prepared2Preparing a passivation layer on the Au device according to requirements to protect the stability of the two-dimensional material.
Further, in step S1, the two-dimensional material is obtained by mechanical stripping or chemical vapor deposition.
Further, in the step S2, Au/Ti (50nm/10nm) electrodes are obtained by electron beam evaporation and deposited on both sides of the silicon substrate, which is made of SiO with a thickness of 300nm2And (4) silicon wafers with oxide layers.
Further, in the step S3, the obtained WSe2The flakes and graphene flakes are transferred to the substrate by a two-step deterministic transfer process. And one side of the graphene sheet is pressed on the WSe2On a sheet, with WSe2The other side of the metal electrode is pressed on the gold electrode, and the metal electrode is ohmic contact; WSe2The other side of the sheet is pressed against the metal electrode to form a schottky junction with the gold electrode. Thereby forming Graphene-WSe2-devices of Au structure.
Further, in step S4, an Atomic Layer Deposition (ALD) technique is first used in WSe2Depositing a layer of HfO on top of the graphene heterojunction material2Layer as a tunneling layer, and then preparing Si by liquid lift-off method3N4Dispersed liquid drop of nano-sheet in HfO2On top and dried at room temperature for 24 hours to form a trapping layer.
8. The method for manufacturing a self-driven photodetector with low dark current according to claim 4, wherein: in step S5, a material of the passivation layer is typically photoresist or silicon nitride.
Compared with the prior art, the invention provides the self-driven photoelectric detector with low dark current and the preparation method thereof, and the self-driven photoelectric detector has the following beneficial effects:
1. the invention has the beneficial effects that: Graphene-WSe prepared by deterministic dry transfer method2The Au structure has good photovoltaic property, the Fermi level pinning effect easily caused by directly evaporating the electrode on the two-dimensional material by the traditional method is avoided, and the device has good photoresponse.
2. The invention has the following beneficial effects: due to two heterojunctions WSe of the device2-Graphene junction and WSe2The Au junction has asymmetry, the device has self-driving characteristic, and theThe device works under zero bias, and the dark current at the moment can be almost ignored; in addition, due to the introduction of the tunneling layer and the trapping layer, the dark current can be controlled to be a very low order of magnitude even when the device is operated under an external bias.
Drawings
Fig. 1 is a front view of an embodiment of a self-driven type photodetector with low dark current according to the present invention;
fig. 2 is a perspective view of an embodiment of a self-driven photodetector with low dark current according to the present invention;
FIG. 3 is a perspective view of a two-dimensional semiconductor material heterojunction for one embodiment of a self-driven photodetector with low dark current in accordance with the present invention;
fig. 4 is a schematic flow chart of a method for manufacturing a self-driven photodetector with low dark current according to an embodiment of the present invention.
Fig. 5 is an output curve of a self-driven type photodetector with low dark current according to the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments.
In the description of the present invention, it is to be understood that the terms "upper", "lower", "front", "rear", "left", "right", "top", "bottom", "inner", "outer", and the like, indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, are merely for convenience in describing the present invention and simplifying the description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention.
Example 1:
referring to fig. 1-3, the present invention provides a self-driven type photodetector with low dark current, comprising a substrate 101 and a photodetectorThe two-dimensional semiconductor material heterojunction field effect transistor comprises a two-dimensional semiconductor material sheet moving on a substrate, two metal electrodes 102, a tunneling layer 105 and a trapping layer 106, wherein the two metal electrodes 102 are respectively deposited on two sides of the substrate, the tunneling layer 105 is positioned on the top of a two-dimensional semiconductor material heterojunction, and the trapping layer 106 is positioned above the tunneling layer 105; said two-dimensional semiconductor material flakes are respectively transition metal chalcogenide WSe 2103 and graphene 104, the tunneling layer 105 is made of HfO2The trapping layer 106 is made of Si3N4。
Transition metal chalcogenide WSe in two-dimensional semiconductor material sheet in the invention 2103 and graphene 104 were 50nm thick with no more than 1% deviation.
Tunneling layer HfO in the invention 2105 thickness of 10nm, the trapping layer Si3N4106 are 5nm thick.
In this embodiment, an insulating dielectric layer 107 for protecting the substrate 101 is also provided on the substrate 101, and thus the two-dimensional semiconductor sheet is above the insulating dielectric layer 107 in the front view of fig. 1. In this embodiment, one side of the graphene 104 is pressed against the WSe 2103 with WSe 2103, forming a Van der Waals heterojunction, and pressing the other side of the Van der Waals heterojunction on the gold electrode to form ohmic contact; WSe2The other side of 103 is pressed against the metal electrode to form a schottky junction with the gold electrode.
For a gene based on Graphene-WSe2The self-driven photodetector of Au structure, which is called a self-driven photodetector with low dark current in the present invention, has a photocurrent when operating without bias:
J＝qG(WL-WR)
where J is the device photocurrent G, W is the carrier generation rate and the depletion layer width of the two-sided heterojunction respectively:
εSand NDIs WSe2Relative dielectric constant and doping concentration of the material, VBLAnd VBRIs the barrier height of the two junctions, i.e. electrode material and WSe2The difference in work function. So as to realize the short-circuit current I of the device under zero biasscIf the widths of depletion layers of the heterojunctions at two ends are required to be controlled to be different, namely electrode materials (gold electrodes and graphene electrodes) with different work functions are adopted, the dark current of the device under zero bias is very small and can be almost ignored.
In order to inhibit the dark current of the device when the device works under the external bias voltage, the invention adds two layers of materials on the upper layer of the heterojunction: HfO2Tunneling layer and Si3N4Trapping layer, thin layer Si3N4A certain amount of intrinsic carriers can be trapped, thereby reducing the dark current of the device. The specific working principle is as follows: applying positive gate voltage to the device (the device takes a silicon substrate as a back gate), and using WSe2The Fermi level of the material will rise and electrons will be transferred from WSe because electrons will travel from places with high Fermi level to places with low Fermi level2Flow direction HfO2Then is coated with Si3N4Trapping and thus depleting the intrinsic carriers (electrons) and suppressing the dark current of the device.
Under the action of illumination, although photons can excite part of electrons to enter HfO2But fall back onto the heterojunction material, so that the two layers of materials have little influence on the photocurrent of the device. In addition, the two thin layers have better light transmission and have smaller influence on the light absorption of the bottom heterojunction material.
In general, WSe is due to two heterojunctions of the device2-Graphene and WSe2Au has asymmetry, the device has self-driving characteristics, and can work under zero bias, and the dark current is almost negligible; in addition, due to the introduction of the tunneling layer and the trapping layer, the dark current can be controlled to be a very low order of magnitude even when the device is operated under an external bias.
Further, in a preferred embodiment, the two metal electrodes are formed using 50nmAu/10 nmTi.
The present invention also provides a method for manufacturing a self-driven photodetector with low dark current, comprising the steps of:
s1, preparing a two-dimensional material;
s2, preparing an electrode material on the substrate 101;
s3, constructing a heterojunction;
s4, preparing a tunneling layer 105 and a trapping layer 106 on the heterojunction material;
s5 Graphene-WSe prepared2Preparing a passivation layer on the Au device according to requirements to protect the stability of the two-dimensional material.
Further, as a preferred embodiment, in the step S1, the two-dimensional material is obtained by a mechanical stripping method or a chemical vapor deposition method.
Further, as a preferred embodiment, in the step S2, Au/Ti (50nm/10nm) electrodes are obtained by electron beam evaporation and deposited on both sides of a silicon substrate with SiO of 300nm2And (4) silicon wafers with oxide layers.
Further, as a preferred embodiment, in the step S3, the obtained WSe is processed2The flakes and graphene flakes are transferred to the substrate by a two-step deterministic transfer process. And one side of the graphene sheet is pressed on the WSe2On a sheet, with WSe2The other side of the metal electrode is pressed on the gold electrode, and the metal electrode is ohmic contact; WSe2The other side of the sheet is pressed against the metal electrode to form a schottky junction with the gold electrode. Thereby forming Graphene-WSe2-devices of Au structure.
Further, as a preferred embodiment, in step S4, an Atomic Layer Deposition (ALD) technique is first applied to WSe2Depositing a layer of HfO on top of the graphene heterojunction material2Layer as a tunneling layer, and then preparing Si by liquid lift-off method3N4Dispersed liquid drop of nano-sheet in HfO2On top and dried at room temperature for 24 hours to form a trapping layer.
Further, as a preferred embodiment, in the step S5, a material of the passivation layer is generally photoresist, silicon nitride, or the like.
A detailed embodiment of the manufacturing method of the present invention is shown below:
step (1) of using SiO with a particle size of 300nm2The silicon chip of the oxide layer is used as a substrate material;
step (2), obtaining Au/Ti (50nm/10nm) electrodes by an electron beam evaporation method, and depositing the electrodes on two sides of a silicon substrate;
step (3), obtaining WSe by mechanical stripping or chemical vapor deposition method2Flakes and graphene flakes, and the WSe to be obtained2The flakes and graphene flakes are transferred to the substrate by a two-step deterministic transfer process. And one side of the graphene sheet is pressed on the WSe2On a sheet, with WSe2The other side of the metal electrode is pressed on the gold electrode, and the metal electrode is ohmic contact; WSe2The other side of the sheet is pressed against the metal electrode to form a schottky junction with the gold electrode. Thereby forming Graphene-WSe2-a device of Au structure;
step (4), firstly adopting Atomic Layer Deposition (ALD) technology to WSe2Depositing a layer of HfO on top of the graphene heterojunction material2Layer as a tunneling layer, and then preparing Si by liquid lift-off method3N4Dispersed liquid drop of nano-sheet in HfO2On top and dried at room temperature for 24 hours to form a trapping layer.
Step (5), the prepared Graphene-WSe2-preparing a passivation layer on the Au device as required.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art should be considered to be within the technical scope of the present invention, and the technical solutions and the inventive concepts thereof according to the present invention should be equivalent or changed within the scope of the present invention.
Claims (8)
1. A self-driven photodetector with low dark current, comprising a substrate and a plurality of electrodesThe two-dimensional semiconductor heterojunction material film comprises a substrate, a two-dimensional semiconductor material sheet, two metal electrodes, a tunneling layer and a trapping layer, wherein the two metal electrodes are respectively deposited on two sides of the substrate; said two-dimensional semiconductor material flakes are respectively transition metal chalcogenide WSe2And graphene, wherein the tunneling layer is made of HfO (high-k oxide)2The trapping layer is made of Si3N4。
2. A self-driven type photodetector with a low dark current according to claim 1, characterized in that: the metal electrode is formed by 50nmAu/10 nmTi.
3. A method of fabricating a self-driven photodetector having a low dark current, comprising the steps of:
s1, preparing a two-dimensional material;
s2, preparing an electrode material on the substrate;
s3, constructing a heterojunction;
s4, preparing a tunneling layer and a trapping layer on the heterojunction material;
s5 Graphene-WSe prepared2Preparing a passivation layer on the Au device according to requirements to protect the stability of the two-dimensional material.
4. The method of manufacturing a self-driven type photodetector with a low dark current according to claim 3, wherein: in step S1, the two-dimensional material is obtained by mechanical stripping or chemical vapor deposition.
5. The method of manufacturing a self-driven type photodetector with a low dark current according to claim 3, wherein: in the step S2, Au/Ti (50nm/10nm) electrodes are obtained by electron beam evaporation and deposited on both sides of a silicon substrate with SiO 300nm2And (4) silicon wafers with oxide layers.
6. The method of manufacturing a self-driven type photodetector with a low dark current according to claim 3, wherein: in the step S3, the obtained WSe2The flakes and graphene flakes are transferred to a substrate by a two-step deterministic transfer process with one side of the graphene flakes pressed against the WSe2On a sheet, with WSe2The other side of the metal electrode is pressed on the gold electrode, and the metal electrode is ohmic contact; WSe2The other side of the sheet is pressed on the metal electrode to form a Schottky junction with the gold electrode, thereby forming Graphene-WSe2-devices of Au structure.
7. The method of manufacturing a self-driven type photodetector with a low dark current according to claim 3, wherein: in step S4, an Atomic Layer Deposition (ALD) technique is first applied to WSe2Depositing a layer of HfO on top of the graphene heterojunction material2Layer as a tunneling layer, and then preparing Si by liquid lift-off method3N4Dispersed liquid drop of nano-sheet in HfO2On top and dried at room temperature for 24 hours to form a trapping layer.
8. The method of manufacturing a self-driven type photodetector with a low dark current according to claim 3, wherein: in step S5, a material of the passivation layer is typically photoresist or silicon nitride.
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