CN111490150A - Semiconductor module with external power sensor - Google Patents

Semiconductor module with external power sensor Download PDF

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Publication number
CN111490150A
CN111490150A CN202010076590.1A CN202010076590A CN111490150A CN 111490150 A CN111490150 A CN 111490150A CN 202010076590 A CN202010076590 A CN 202010076590A CN 111490150 A CN111490150 A CN 111490150A
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terminal
region
opening
magnetic field
mold compound
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CN202010076590.1A
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CN111490150B (en
Inventor
J·赫格尔
L·艾希里德勒
C·施魏克特
G·弗里斯内格尔
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Infineon Technologies AG
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Infineon Technologies AG
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    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • H01L22/34—Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line
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    • G01R15/14—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks
    • G01R15/20—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices
    • G01R15/207—Constructional details independent of the type of device used
    • G—PHYSICS
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    • G01R21/00—Arrangements for measuring electric power or power factor
    • G—PHYSICS
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    • G01R33/07—Hall effect devices
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    • G01R33/072—Constructional adaptation of the sensor to specific applications
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    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
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    • H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
    • H01L23/057—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body the leads being parallel to the base
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    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
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    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H01L23/3675—Cooling facilitated by shape of device characterised by the shape of the housing
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    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
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    • H01L23/50—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
    • H—ELECTRICITY
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    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
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    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
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Abstract

The invention discloses a semiconductor module, which comprises: a semiconductor die; a molding compound surrounding the semiconductor die; a plurality of terminals electrically connected to the semiconductor die and protruding from the mold compound, wherein a first one of the terminals has a shrink region covered by the mold compound, wherein the mold compound has a recess or opening near the shrink region of the first terminal; and a coreless magnetic field sensor disposed in the recess or the opening of the molding compound and isolated from the first terminal by the molding compound. The coreless magnetic field sensor is configured to generate a signal in response to a magnetic field generated by a current flowing in the constricted region of the first terminal, a magnitude of the signal being proportional to an amount of the current flowing in the constricted region of the first terminal. A method of manufacturing a module is also described.

Description

Semiconductor module with external power sensor
Background
Accurate operation of the inverter package or module requires current sensing of the AC current to ensure effective system performance. AC current sensing is typically implemented using a core-based magnetic field sensor. The performance of core-based open-loop current sensors is limited, particularly due to the negative effects of the iron core. For example, core-based open-loop current sensors suffer from hysteresis, saturation, nonlinearity, temperature-dependent permeability, eddy current effects, and the like. Some of the problems can be solved using an external circuit for compensating the magnetic flux generated by the test current and a probe for determining a zero flux condition in the air gap. However, the additional circuitry, compensation windings, and additional power consumption in the compensation windings add considerable cost to the overall sensing implementation.
In most cases, the inherent accuracy of core-based sensors is not sufficient to meet end-customer requirements, for example, for automotive traction inverters. Therefore, end-of-line calibration may be required to compensate for gain and offset errors of the sensors. This calibration step is expensive because it requires the forced application of high currents with high precision after the assembly of the inverter module and the current sensor. Since the calibration step is usually only performed at room temperature, the residual errors due to lifetime drift and temperature dependence are still large and can affect the overall system performance.
Accordingly, there is a need for an improved external power sensor for a semiconductor module.
Disclosure of Invention
According to an embodiment of the semiconductor module, the semiconductor module comprises: a semiconductor die; a molding compound surrounding the semiconductor die; a plurality of terminals electrically connected to the semiconductor die and protruding from the mold compound, wherein a first one of the terminals has a constricted region covered by the mold compound, wherein the mold compound has a recess or opening near the constricted region of the first terminal; and a coreless magnetic field sensor disposed in the recess or opening of the molding compound and isolated from the first terminal by the molding compound, the coreless magnetic field sensor configured to generate a signal in response to a magnetic field generated by a current flowing in the constricted region of the first terminal, a magnitude of the signal being proportional to an amount of the current flowing in the constricted region of the first terminal.
The coreless magnetic field sensor may be a magnetoresistive sensor or a hall sensor.
Individually or in combination, the constricted region of the first terminal may comprise a tapered region over which the width of the first terminal narrows, the recess of the molding compound may be near the tapered region of the first terminal, the coreless magnetic field sensor may be a single-ended sensor disposed in the recess of the molding compound and include a single sensing element positioned adjacent to one side of the tapered region, and the single sensing element may be isolated from the tapered region by the molding compound.
Individually or in combination, the constricted region of the first terminal may include a tapered region over which a width of the first terminal narrows, the recess of the molding compound may be near the tapered region of the first terminal, the coreless magnetic field sensor may be a differential sensor disposed in the recess of the molding compound and include a first sensing element positioned adjacent a first side of the tapered region and a second sensing element positioned adjacent a second side of the tapered region opposite the first side, and the first and second sensing elements may be isolated from the tapered region by the molding compound.
Separately or in combination, the pinch region of the first terminal can include a serpentine region, the recess of the molding compound can be proximate the serpentine region of the first terminal, wherein the coreless magnetic field sensor is a single-ended sensor disposed in the recess of the molding compound and includes a single sense element positioned adjacent to a side of the serpentine region, and wherein the single sense element is isolated from the serpentine region by the molding compound.
Separately or in combination, the constricted region of the first terminal can include a serpentine region, the depression of the mold compound can be proximate the serpentine region of the first terminal, the coreless magnetic field sensor can be a differential sensor disposed in the depression of the mold compound, and include a first sensing element positioned adjacent a first side of the serpentine region and a second sensing element positioned adjacent a second side of the serpentine region opposite the first side, and the first and second sensing elements can be isolated from the serpentine region by the mold compound.
Individually or in combination, the constricted region of the first terminal may comprise a region of the first terminal having an opening, the opening of the mold compound may be aligned with the opening in the first terminal, the coreless magnetic field sensor may be a single-ended sensor disposed in the opening of the mold compound and include a single sensing element positioned above or below the opening in the first terminal, and the single sensing element may be isolated from a sidewall of the opening in the first terminal by the mold compound.
Separately or in combination, the constricted region of the first terminal may comprise a region of the first terminal having an opening, the opening of the mold compound may be aligned with the opening in the first terminal, the coreless magnetic field sensor may be a differential sensor disposed in the opening of the mold compound and include a first sensing element positioned above the opening in the first terminal and a second sensing element positioned below the opening in the first terminal, and the first and second sensing elements may be isolated from sidewalls of the opening in the first terminal by the mold compound.
Individually or in combination, the mold compound may have a protrusion that covers more of the first terminals than other of the terminals that protrude from the same side of the mold compound as the first terminals, and a depression or opening of the mold compound may be formed in the protrusion.
Individually or in combination, the semiconductor die may be a power semiconductor die, the semiconductor module may have double-sided cooling, and the first terminal may be an AC output terminal of the power semiconductor die.
According to an embodiment of the cooling system, the cooling system comprises: a plurality of individual semiconductor modules, each individual semiconductor module comprising: a semiconductor die; a molding compound surrounding the semiconductor die; a plurality of terminals electrically connected to the semiconductor die and protruding from the mold compound, wherein a first one of the terminals has a constricted region covered by the mold compound, wherein the mold compound has a recess or opening near the constricted region of the first terminal; and a coreless magnetic field sensor disposed in the recess or opening of the molding compound and isolated from the first terminal by the molding compound, the coreless magnetic field sensor configured to generate a signal in response to a magnetic field generated by a current flowing in the constricted region of the first terminal, a magnitude of the signal being proportional to an amount of the current flowing in the constricted region of the first terminal; and a first cover joined to a second cover to form a sealed housing comprising a plurality of individual semiconductor modules and a cavity between the covers and the individual semiconductor modules for fluid flow via a plurality of ports formed in the first and/or second covers.
Each coreless magnetic field sensor of the cooling system may be a magnetoresistive sensor or a hall sensor.
Individually or in combination, the constricted region of each first terminal may comprise a tapered region over which the width of the first terminal narrows, the recess of the molding compound may be near the tapered region of the first terminal, the coreless magnetic field sensor may be a single-ended sensor disposed in the recess of the molding compound and include a single sense element positioned adjacent to one side of the tapered region, and the single sense element may be isolated from the tapered region by the molding compound.
Individually or in combination, the constricted region of each first terminal may include a tapered region over which the width of the first terminal narrows, the recess of the molding compound may be near the tapered region of the first terminal, the coreless magnetic field sensor may be a differential sensor disposed in the recess of the molding compound and include a first sensing element positioned adjacent a first side of the tapered region and a second sensing element positioned adjacent a second side of the tapered region opposite the first side, and the first and second sensing elements may be isolated from the tapered region by the molding compound.
Individually or in combination, the pinch region of each first terminal can include a serpentine region, the depression of the mold compound can be proximate the serpentine region of the first terminal, the coreless magnetic field sensor can be a single-ended sensor disposed in the depression of the mold compound and include a single sense element positioned adjacent to one side of the serpentine region, and the single sense element can be isolated from the serpentine region by the mold compound.
Separately or in combination, the constricted region of each first terminal can include a serpentine region, the depression of the molding compound can be proximate to the serpentine region of the first terminal, the coreless magnetic field sensor can be a differential sensor disposed in the depression of the molding compound, and include a first sensing element positioned adjacent a first side of the serpentine region and a second sensing element positioned adjacent a second side of the serpentine region opposite the first side, and the first and second sensing elements can be isolated from the serpentine region by the molding compound.
Individually or in combination, the constricted region of each first terminal may comprise a region of the first terminal having an opening, the opening of the mold compound may be aligned with the opening in the first terminal, the coreless magnetic field sensor may be a single-ended sensor disposed in the opening of the mold compound and include a single sensing element positioned above or below the opening in the first terminal, and the single sensing element may be isolated from a sidewall of the opening in the first terminal by the mold compound.
Individually or in combination, the constricted region of each first terminal may comprise a region of the first terminal having an opening, the opening of the mold compound may be aligned with the opening in the first terminal, the coreless magnetic field sensor may be a differential sensor disposed in the opening of the mold compound and include a first sensing element positioned above the opening in the first terminal and a second sensing element positioned below the opening in the first terminal, and the first and second sensing elements may be isolated from sidewalls of the opening in the first terminal by the mold compound.
Individually or in combination, the mold compound of each individual semiconductor module may have a protrusion that covers more of the first terminals than other of the terminals that protrude from the same side of the mold compound as the first terminals, and a depression or opening of the mold compound may be formed in the protrusion.
Individually or in combination, each semiconductor die may be a power semiconductor die, wherein each individual semiconductor module has double-sided cooling, and each first terminal may be an AC output terminal of the power semiconductor die.
According to an embodiment of a method of manufacturing a semiconductor module, the method comprises: electrically connecting a plurality of terminals to the semiconductor die; molding the plurality of terminals and the semiconductor die such that the semiconductor die is encased in the molding compound and the plurality of terminals protrude out of the molding compound, wherein a first one of the terminals has a shrink region covered by the molding compound, wherein the molding compound has a recess or opening near the shrink region of the first terminal; and placing a coreless magnetic field sensor in the recess or opening of the molding compound, the coreless magnetic field sensor being isolated from the first terminal by the molding compound and configured to generate a signal in response to a magnetic field generated by a current flowing in the constricted region of the first terminal, a magnitude of the signal being proportional to an amount of the current flowing in the constricted region of the first terminal.
Those skilled in the art will recognize additional features and advantages upon reading the following detailed description, and upon viewing the accompanying drawings.
Drawings
The elements of the drawings are not necessarily to scale relative to each other. Like reference numerals designate corresponding similar parts. Features of the various illustrated embodiments may be combined unless they are mutually exclusive. Embodiments are depicted in the drawings and are described in detail in the following description.
Figure 1 shows a perspective view of an embodiment of a semiconductor module with a coreless magnetic field sensor.
Fig. 2 shows a flow chart of an embodiment of a method of manufacturing the semiconductor module shown in fig. 1.
Figure 3A shows an enlarged view of a portion of the semiconductor module of figure 1 before a coreless magnetic field sensor is disposed in the recess of the molding compound.
Fig. 3B shows the same view as the semiconductor module shown in fig. 3A, but after the coreless magnetic field sensor is disposed in the recess.
Fig. 3C shows a partial cross-sectional view of the semiconductor module along the line labeled a-a' in fig. 1.
Figure 4 illustrates a top plan view of an embodiment of a terminal of the semiconductor module of figure 1 having a constricted region proximate to a coreless magnetic field sensor.
Figure 5 illustrates a top plan view of another embodiment of a terminal of the semiconductor module of figure 1 having a constricted region proximate to a coreless magnetic field sensor.
Figure 6 illustrates a perspective view of another embodiment of a semiconductor module having a coreless magnetic field sensor.
Figure 7A shows an enlarged view of a portion of the semiconductor module of figure 6 before a coreless magnetic field sensor is disposed in the opening of the mold compound.
Fig. 7B shows the same view as the semiconductor module shown in fig. 7A, but after the coreless magnetic field sensor is disposed in the recess.
Fig. 7C shows a partial cross-sectional view of the semiconductor module along the line labeled B-B' in fig. 6.
Figure 7D illustrates a top plan view of an embodiment of a terminal of the semiconductor module of figure 6 having an opening for receiving a coreless magnetic field sensor.
Figure 8 illustrates a perspective view of an embodiment of a cooling system having a plurality of individual semiconductor modules, each having an integrated coreless magnetic field sensor.
Detailed Description
Embodiments described herein integrate a coreless open loop current sensor into the packaging of a power module. The terminals of the power module have sensing structures that generate magnetic fields for current sensing, and the molded body of the package is designed such that a coreless current sensor can be mounted and aligned towards the sensing structures. Since coreless sensors do not have an iron core, there are no corresponding negative effects (e.g., temperature dependence, hysteresis, etc.). To suppress external stray fields, the design can be implemented as a differential sensing concept. To implement a differential design, the coreless current sensor may be aligned in a variety of ways with respect to the current rail. Lateral and vertical integration of sensors is described herein. For example, in the case of low noise applications, the sensor implementation may instead be single ended. The molded body of the module is configured to receive the coreless magnetic field sensor such that the current sensor is positioned above or below or in the terminal. The molded module body may be configured to isolate the current sensor from the sensed terminal.
Figure 1 illustrates an embodiment of a semiconductor module 100 with an integrated coreless open loop current sensor 102. The semiconductor module 100 includes one or more semiconductor dies 104, 106, such as power MOSFETs (metal oxide semiconductor field effect transistors), HEMTs (high electron mobility transistors), IGBTs (insulated gate bipolar transistors), JFETs (junction FETs), or the like. In one embodiment, one or more of the semiconductor dies 104, 106 is a SiC die that does not have internal current sensing capability. The one or more semiconductor dies 104, 106 are surrounded by the molding compound 108, and thus are not visible in fig. 1 and are illustrated by respective dashed boxes.
The semiconductor module 100 also includes a plurality of terminals 110, 112, 114 electrically connected to one or more of the semiconductor dies 104, 106 and protruding from the molding compound 108. For example, the terminals 110, 112, 114 may be electrically connected to the one or more semiconductor dies 104, 106 by wire bonds, metal straps, metal clips, or the like. In one embodiment, terminals 110, 112, 114 are leads of a leadframe. In another embodiment, at least the power terminals 110, 114 are bus bars or lugs. Other types of terminals may also be used. Different types of terminals may be used in the same module. For example, leadframe-type terminals may be used for control and/or sense connections, and bus bar or lug-type terminals may be used for power connections. The number and type of terminals 110, 112, 114 provided depends on the type of semiconductor module.
For example, in the case of a half-bridge power semiconductor module, the high-side semiconductor die 104 and the low-side semiconductor die 106 are surrounded by the molding compound 108. The first set of terminals 112 of the semiconductor module 100 may be control and sense terminals for providing control signals to the high-side and low-side semiconductor die 104, 106 and for receiving telemetry data, such as current sense information, temperature sense information, etc., from the module 100. The high-side and low-side semiconductor dies 104, 106 may be SiC dies that do not have internal current sensing capability. The second set of terminals 110 are DC power supply terminals that are used to provide positive and negative (or ground) potentials to the high-side and low-side semiconductor dies 104, 106. The high-side and low-side semiconductor dies 104, 106 are electrically coupled in series at a common output node. The other terminal 114 is an AC output terminal electrically connected to a common output node of the dies 104, 106.
The AC output terminals 114 have a constricted region covered by the molding compound 108. The constricted region is not visible in fig. 1.
The coreless magnetic field sensor 102 integrated in the semiconductor module 100 is configured to generate a signal in response to a magnetic field generated by a current flowing in a constricted region of the AC output terminal 114 of the module 100. Coreless magnetic field sensor 102 has one or more terminals 116, such as pins, leads, etc., for accessing signals generated by sensor 102. Coreless magnetic field sensor 102 may be calibrated during an end-of-line test procedure performed on semiconductor module 100 prior to shipping. This may result in improved accuracy compared to the customer's calibration process, since the end of line test procedure is performed in a controlled environment with multi-temperature calibration capability, and possibly omitting the high current calibration step that is typically performed in the field.
The magnitude of the signal generated by coreless magnetic field sensor 102 is proportional to the amount of current flowing in the constricted region of AC output terminal 114. Any type of coreless magnetic field sensor may be used. In one embodiment, coreless magnetic field sensor 102 is a magnetoresistive (XMR) sensor, such as an Anisotropic Magnetoresistive (AMR) sensor, a Giant Magnetoresistive (GMR) sensor, or a Tunneling Magnetoresistive (TMR) sensor. In the case of an XMR sensor, the resistivity of the metal, semi-metal, or semiconductor included in the sensor 102 varies under the influence of a magnetic field and in proportion to the amount of current flowing in the constricted region of the AC output terminal 114. In another embodiment, coreless magnetic field sensor 102 is a Hall sensor. In the case of a hall sensor, the transducer included in the sensor 102 has an output voltage that is responsive to a magnetic field and varies in proportion to the amount of current flowing in the constricted region of the AC output terminal 114.
According to the embodiment shown in fig. 1, the molding compound 108 has a recess 118 near the constricted region of the AC output terminals 114. The coreless magnetic field sensor 102 is disposed in a recess 118 of the molding compound 108. In one embodiment, the mold compound 108 has a protrusion 120, the protrusion 120 covering more of the AC output terminals 114 than other of the terminals 112 protruding from the same side of the mold compound 108 as the AC output terminals 114. A depression 118 of the molding compound 108 is formed in the protrusion 120.
Fig. 2 shows an embodiment of a method of manufacturing the semiconductor module 100 shown in fig. 1. The method includes electrically connecting terminals 110, 112, 114 to one or more semiconductor dies 104, 106 (block 200). For example, the terminals 110, 112, 114 may be electrically connected to the one or more semiconductor dies 104, 106 by wire bonds, metal straps, metal clips, or the like. The method also includes molding the terminals 110, 112, 114 and the one or more semiconductor dies 104, 106 such that the one or more semiconductor dies 104, 106 are encased in the molding compound 108 and the terminals 110, 112, 114 protrude from the molding compound 108, the AC output terminals 114 have a constricted region covered by the molding compound 108, and the molding compound 108 has a recess 118 near the constricted region of the AC output terminals 114 (block 210). Any typical molding process may be used, such as injection molding, film-assisted molding, transfer molding, and the like. The protrusion 120 of the molding compound 108 may be formed using a pin in a molding tool. The method also includes placing the coreless magnetic field sensor 102 in the recess 118 of the molding compound 108 (block 220). Coreless magnetic field sensor 102 may be secured in the recess by glue, tape, etc., or may be clamped in place by the shape and features of recess 118.
Figure 3A shows an enlarged view of a portion of the semiconductor module 100 before the coreless magnetic field sensor 102 is disposed in the recess 118 of the molding compound 108. Fig. 3B shows the same view as the semiconductor module 100 shown in fig. 3A, but after the coreless magnetic field sensor 102 is disposed in the recess 118. Fig. 3C shows a partial cross-sectional view of the semiconductor module 100 along the line labeled a-a' in fig. 1. The semiconductor module 100 may include: a first substrate 122, such as a PCB (printed circuit board) or DCB (direct copper bonded) substrate, to which the high-side power semiconductor die 104 (not visible in fig. 3C) is attached; and a second substrate 124, such as a PCB or DCB substrate, to which the low side power semiconductor die 106 (also not visible in fig. 3C) is attached. With this configuration, the semiconductor module 100 can have double-sided cooling.
For example, in the case of an arrangement of stacked DCB substrates 122, 124, each DCB substrate 122, 124 has two metallized surfaces 126, 128, the metallized surfaces 126, 128 being separated by an insulating substrate 130, such as a ceramic. The top metallization side 126 of the upper DCB substrate 122 provides cooling on one side of the semiconductor module 100, while the bottom metallization side 126 of the lower DCB substrate 124 provides cooling on the opposite side of the module 100. Double-sided cooling may also be achieved by using PCB substrates 122, 124. Double-sided cooling is advantageous for high power applications, such as automotive power electronics. One or more of the semiconductor dies 104, 106 may be attached to the same substrate rather than separate substrates.
In further accordance with the embodiment shown in figure 3C, the coreless magnetic field sensor 102 may be a single-ended or differential sensor disposed in the recess 118 of the molding compound 108. In the case of a differential sensor, the coreless magnetic field sensor 102 has a first sensing element 132 positioned adjacent a first side of the constricted region 134 of the AC output terminal 114 and a second sensing element 136 positioned adjacent a second side of the constricted region 134 opposite the first side. The differential coreless magnetic field sensor 102 generates a signal that is a linear function of a differential magnetic flux density of the magnetic fields passing through the first and second sensing elements 132, 136. For example, in low noise applications, one of the sensing elements 132, 136 may be omitted to produce a single-ended, coreless magnetic field sensor 102. In this embodiment, a single sensing element 132 (or 136) is positioned adjacent to one side of the constricted region 134 of the AC output terminals 114 of the semiconductor module 100. In the case of differential or single-ended, the sensing elements 132, 136 of the coreless magnetic field sensor 102 may be attached to a substrate 138, such as a PCB, with the terminals 116 of the sensor 102 also being attached to the substrate 138. In both cases, each sensing element 132, 136 of the coreless magnetic field sensor 102 is isolated from the constricted region 134 of the AC output terminal 114 by the molding compound 108 to ensure proper electrical isolation for accurate sensing of the current flowing in the constricted region 134 of the terminal 114.
Fig. 4 illustrates an embodiment of a portion of the AC output terminals 114 covered by the molding compound 108 and having a constricted region 134. The molding compound 108 is not shown in fig. 4 to provide an unobstructed view of the shrink region 134. According to this embodiment, the constricted region 134 of the AC output terminal 114 is a tapered region 300 over which tapered region 300 the width of the terminal 114 narrows from a larger width W1 to a smaller width W2. In the case of a differential coreless magnetic field sensor 102, the sensor 102 has sensing elements 132, 136 positioned adjacent to opposite sides of a tapered region 300 of the AC output terminal 114. In the case of a single-ended coreless magnetic field sensor 102, one of the sensing elements 132 (or 136) shown in FIG. 4 is omitted. In either case, the recess 118 of the molding compound 108 is located near the tapered region 300 of the AC output terminal 114, and the (differential or single-ended) coreless magnetic field sensor 102 is disposed in the recess 118 of the molding compound 108, for example, as shown in fig. 1 and 3A-3C.
Fig. 5 illustrates another embodiment of a portion of the AC output terminals 114 covered by the molding compound 108 and having a constricted region 134. The molding compound 108 is not shown in fig. 5 to provide an unobstructed view of the shrink region 134. According to this embodiment, the constricted region 134 of the AC output terminal 114 is a serpentine region 400 of the terminal 114, which serpentine region 400 is wound or rotated in one direction and then in the other. In the case of a differential coreless magnetic field sensor 102, the sensor 102 has sensing elements 132, 136 positioned adjacent to opposite sides of the serpentine region 400 of the AC output terminal 114. In the case of a single-ended coreless magnetic field sensor 102, one of the sensing elements 132 (or 136) shown in FIG. 5 is omitted. In either case, the recess 118 of the molding compound 108 is located near the serpentine region 400 of the AC output terminals 114, and the (differential or single-ended) coreless magnetic field sensor 102 is disposed in the recess 118 of the molding compound 108, for example, as shown in fig. 1 and 3A-3C.
The above-described embodiments provide a lateral-type integration of coreless magnetic field sensors that provides minimum solution height and maximum field sensing. However, the lateral type integrated sensing structure may cause a significant bottleneck for the current in the AC output terminal of the semiconductor module. The resulting higher dissipation may limit the maximum output current capability of the semiconductor module. Described next are embodiments of a vertical-type integrated semiconductor module with a coreless magnetic field sensor. The vertical insertion sensing structure provides a lower insertion resistance at the expense of reduced sensing field strength.
Figure 6 illustrates another embodiment of a semiconductor module 500 having an integrated coreless open loop current sensor 102. The embodiment shown in fig. 6 is similar to the embodiment shown in fig. 1. However, in contrast, the constricted region 134 of the AC output terminal 114 is the region of the terminal having an opening that is not visible in fig. 6. According to this embodiment, the molding compound 108 has openings 502 that align with the openings in the AC output terminals 114. The coreless magnetic field sensor 102 is disposed in the opening 502 of the molding compound 108. The molding compound 108 covers the sidewalls of the openings in the AC output terminals 114, thereby isolating the coreless magnetic field sensor 102 from the sidewalls of the openings in the AC output terminals 114. In one embodiment, the mold compound 108 has a protrusion 120, the protrusion 120 covering more of the AC output terminals 114 than other of the terminals 112 protruding from the same side of the mold compound 108 as the AC output terminals 114. Openings 502 of the molding compound 108 are formed in the protrusions 120.
The method shown in fig. 2 may be used to manufacture the semiconductor module 500 shown in fig. 6. In contrast, however, coreless magnetic field sensor 102 is placed in opening 502 of molding compound 108 rather than in a recess. Coreless magnetic field sensor 102 may be secured in opening 502 of molding compound 108 by glue, tape, or the like, or sandwiched in place by opening 502.
Figure 7A illustrates an enlarged view of a portion of the semiconductor module 500 shown in figure 6 before the coreless magnetic field sensor 102 is disposed in the opening 502 of the molding compound 108. Figure 7B shows the same view as the semiconductor module 500 shown in figure 7A, but after the coreless magnetic field sensor 102 is disposed in the opening 502 of the molding compound 108. Fig. 7C shows a partial cross-sectional view of the semiconductor module 500 along the line labeled B-B' in fig. 6.
In one embodiment, the coreless magnetic field sensor 102 is a differential sensor disposed in the opening 502 of the molding compound 108 and having the first sensing element 132 positioned above the opening 504 in the AC output terminal 114 of the semiconductor module 500 and the second sensing element 136 positioned below the opening 504 in the AC output terminal 114. In another embodiment, coreless magnetic field sensor 102 is a single-ended sensor. According to this embodiment, one of the sensing elements 132 (or 136) shown in FIG. 7C is omitted. In the differential or single-ended case, each sensing element 132, 136 of the coreless magnetic field sensor 102 is isolated from the sidewalls 506 of the opening 504 in the AC output terminal 114 by the molding compound 108 to ensure proper electrical isolation and accurate sensing of the current flowing in the constricted region 134 of the AC output terminal. Figure 7D shows the portion of the AC output terminals 114 covered by the molding compound 108 and having an opening 504 in which the coreless magnetic field sensor 102 is inserted. The molding compound 108 is not shown in fig. 7D to provide an unobstructed view of the openings 504 and corresponding shrink regions 134.
Fig. 8 shows an embodiment of a cooling system 600, the cooling system 600 comprising a plurality of individual semiconductor modules of the kind previously described herein. The individual semiconductor modules are not visible in fig. 8 and may have a lateral type integrated sensing structure as shown in fig. 1 and 3A-3C or a vertical type integrated sensing structure as shown in fig. 6 and 7A-7C. That is, each individual semiconductor module may include one or more semiconductor dies, a molding compound surrounding each semiconductor die, a plurality of terminals 602 electrically connected to the semiconductor die and protruding from the molding compound, wherein a first terminal of the terminals has a constricted region covered by the molding compound, wherein the molding compound has a recess or opening near the constricted region of the first terminal, and a coreless magnetic field sensor is disposed in the recess or opening of the molding compound and isolated from the first terminal by the molding compound. The coreless magnetic field sensor is configured to generate a signal in response to a magnetic field generated by a current flowing in the constricted region of the first terminal, a magnitude of the signal being proportional to an amount of the current flowing in the constricted region of the first terminal, as previously described herein.
The cooling system 600 also includes a first cover 604 coupled to a second cover 606 to form a sealed enclosure. The sealed housing includes individual semiconductor modules and cavities between the covers and the individual semiconductor modules. This cavity is not visible in fig. 8. The first cover 604 has one or more ports 608 and the second cover 606 has one or more ports 610 so that fluids such as water, coolant, etc. can flow in the cavity between the covers 604, 606 and the individual semiconductor modules. In the case of double-sided cooling, the fluid may flow along both main sides of the individual semiconductor modules. In the case of single-sided cooling, the fluid may flow only along the main side of the individual semiconductor modules with the cooling structure. The covers 604, 606 adjacent to the sides of the individual semiconductor modules without cooling structures may not have any ports. The covers 604, 606 may be made of metal or plastic, or a combination of metal and plastic.
Terms such as "first," "second," and the like, are used to describe various elements, regions, sections, etc., and are not intended to be limiting. Throughout the specification, like terms refer to like elements.
As used herein, the terms "having," "including," and the like are open-ended terms that indicate the presence of stated elements or features, but do not exclude additional elements or features. The articles "a" and "an" are intended to include the plural as well as the singular, unless the context clearly indicates otherwise.
It is to be understood that features of the various embodiments described herein may be combined with each other, unless specifically noted otherwise.
Although specific embodiments have been illustrated and described herein, it will be appreciated by those of ordinary skill in the art that a variety of alternate and/or equivalent implementations may be substituted for the specific embodiments shown and described without departing from the scope of the present invention. This application is intended to cover any adaptations or variations of the specific embodiments discussed herein. Therefore, it is intended that this invention be limited only by the claims and the equivalents thereof.

Claims (21)

1. A semiconductor module, comprising:
a semiconductor die;
a molding compound surrounding the semiconductor die;
a plurality of terminals electrically connected to the semiconductor die and protruding from the mold compound, wherein a first one of the terminals has a shrink region covered by the mold compound, wherein the mold compound has a recess or opening near the shrink region of the first terminal; and
a coreless magnetic field sensor disposed in the recess or the opening of the molding compound and isolated from the first terminal by the molding compound, the coreless magnetic field sensor configured to generate a signal in response to a magnetic field generated by a current flowing in the constricted region of the first terminal, a magnitude of the signal being proportional to an amount of the current flowing in the constricted region of the first terminal.
2. The semiconductor module of claim 1, wherein the coreless magnetic field sensor is a magnetoresistive sensor or a hall sensor.
3. The semiconductor module of claim 1, wherein the constricted region of the first terminal comprises a tapered region over which a width of the first terminal narrows, wherein the recess of the molding compound is near the tapered region of the first terminal, wherein the coreless magnetic field sensor is a single-ended sensor disposed in the recess of the molding compound and comprises a single sense element positioned adjacent to one side of the tapered region, and wherein the single sense element is isolated from the tapered region by the molding compound.
4. The semiconductor module of claim 1, wherein the constricted region of the first terminal comprises a tapered region over which a width of the first terminal narrows, wherein the recess of the mold compound is proximate to the tapered region of the first terminal, wherein the coreless magnetic field sensor is a differential sensor disposed in the recess of the mold compound and comprises a first sensing element positioned adjacent a first side of the tapered region and a second sensing element positioned adjacent a second side of the tapered region opposite the first side, and wherein the first and second sensing elements are isolated from the tapered region by the mold compound.
5. The semiconductor module of claim 1, wherein the constricted region of the first terminal comprises a serpentine region, wherein the recess of the mold compound is proximate to the serpentine region of the first terminal, wherein the coreless magnetic field sensor is a single-ended sensor disposed in the recess of the mold compound and includes a single sense element positioned adjacent to one side of the serpentine region, and wherein the single sense element is isolated from the serpentine region by the mold compound.
6. The semiconductor module of claim 1, wherein the constricted region of the first terminal comprises a serpentine region, wherein the depression of the mold compound is proximate to the serpentine region of the first terminal, wherein the coreless magnetic field sensor is a differential sensor disposed in the depression of the mold compound and includes a first sensing element positioned adjacent a first side of the serpentine region and a second sensing element positioned adjacent a second side of the serpentine region opposite the first side, and wherein the first and second sensing elements are isolated from the serpentine region by the mold compound.
7. The semiconductor module of claim 1, wherein the constricted region of the first terminal comprises a region of the first terminal having an opening, wherein the opening of the mold compound is aligned with the opening in the first terminal, wherein the coreless magnetic field sensor is a single-ended sensor disposed in the opening of the mold compound and includes a single sense element positioned above or below the opening in the first terminal, and wherein the single sense element is isolated from a sidewall of the opening in the first terminal by the mold compound.
8. The semiconductor module of claim 1, wherein the constricted region of the first terminal comprises a region of the first terminal having an opening, wherein the opening of the mold compound is aligned with the opening in the first terminal, wherein the coreless magnetic field sensor is a differential sensor disposed in the opening of the mold compound and includes a first sensing element positioned above the opening in the first terminal and a second sensing element positioned below the opening in the first terminal, and wherein the first and second sensing elements are isolated from sidewalls of the opening in the first terminal by the mold compound.
9. The semiconductor module of claim 1, wherein the mold compound has a protrusion that covers more of the first terminal than other of the terminals that protrude from the same side of the mold compound as the first terminal, and wherein the recess or the opening of the mold compound is formed in the protrusion.
10. The semiconductor module of claim 1, wherein the semiconductor die is a power semiconductor die, wherein the semiconductor module has double-sided cooling, and wherein the first terminal is an AC output terminal of the power semiconductor die.
11. A cooling system, comprising:
a plurality of individual semiconductor modules, each individual semiconductor module comprising: a semiconductor die; a molding compound surrounding the semiconductor die; a plurality of terminals electrically connected to the semiconductor die and protruding from the mold compound, wherein a first one of the terminals has a shrink region covered by the mold compound, wherein the mold compound has a recess or opening near the shrink region of the first terminal; and a coreless magnetic field sensor disposed in the recess or the opening of the molding compound and isolated from the first terminal by the molding compound, the coreless magnetic field sensor configured to generate a signal in response to a magnetic field generated by a current flowing in the constricted region of the first terminal, a magnitude of the signal being proportional to an amount of current flowing in the constricted region of the first terminal; and
a first cover joined to a second cover to form a sealed housing comprising a plurality of individual semiconductor modules and a cavity between the covers and the individual semiconductor modules for fluid flow via a plurality of ports formed in the first cover and/or the second cover.
12. The cooling system of claim 11, wherein each coreless magnetic field sensor is a magnetoresistive sensor or a hall sensor.
13. The cooling system of claim 11, wherein the constricted region of each first terminal comprises a tapered region over which a width of the first terminal narrows, wherein the recess of the molding compound is proximate to the tapered region of the first terminal, wherein the coreless magnetic field sensor is a single-ended sensor disposed in the recess of the molding compound and comprises a single sensing element positioned adjacent to one side of the tapered region, and wherein the single sensing element is isolated from the tapered region by the molding compound.
14. The cooling system of claim 11, wherein the constricted region of each first terminal comprises a tapered region over which a width of the first terminal narrows, wherein the recess of the molding compound is proximate to the tapered region of the first terminal, wherein the coreless magnetic field sensor is a differential sensor disposed in the recess of the molding compound and includes a first sensing element positioned adjacent a first side of the tapered region and a second sensing element positioned adjacent a second side of the tapered region opposite the first side, and wherein the first and second sensing elements are isolated from the tapered region by the molding compound.
15. The cooling system of claim 11, wherein the constricted region of each first terminal comprises a serpentine region, wherein the depression of the mold compound is proximate to the serpentine region of the first terminal, wherein the coreless magnetic field sensor is a single-ended sensor disposed in the depression of the mold compound and includes a single sensing element positioned adjacent to one side of the serpentine region, and wherein the single sensing element is isolated from the serpentine region by the mold compound.
16. The cooling system of claim 11, wherein the constricted region of each first terminal comprises a serpentine region, wherein the depression of the mold compound is proximate to the serpentine region of the first terminal, wherein the coreless magnetic field sensor is a differential sensor disposed in the depression of the mold compound and includes a first sensing element positioned adjacent a first side of the serpentine region and a second sensing element positioned adjacent a second side of the serpentine region opposite the first side, and wherein the first and second sensing elements are isolated from the serpentine region by the mold compound.
17. The cooling system of claim 11, wherein the constricted region of each first terminal comprises a region of the first terminal having an opening, wherein the opening of the mold compound is aligned with the opening in the first terminal, wherein the coreless magnetic field sensor is a single-ended sensor disposed in the opening of the mold compound and includes a single sensing element positioned above or below the opening in the first terminal, and wherein the single sensing element is isolated from a sidewall of the opening in the first terminal by the mold compound.
18. The cooling system of claim 11, wherein the constricted region of each first terminal comprises a region of the first terminal having an opening, wherein the opening of the mold compound is aligned with the opening in the first terminal, wherein the coreless magnetic field sensor is a differential sensor disposed in the opening of the mold compound and includes a first sensing element positioned above the opening in the first terminal and a second sensing element positioned below the opening in the first terminal, and wherein the first and second sensing elements are isolated from sidewalls of the opening in the first terminal by the mold compound.
19. The cooling system of claim 11, wherein the mold compound of each individual semiconductor module has a protrusion that covers more of the first terminal than other of the terminals that protrude from the same side of the mold compound as the first terminal, and wherein the depression or the opening of the mold compound is formed in the protrusion.
20. The cooling system of claim 11, wherein each semiconductor die is a power semiconductor die, wherein each individual semiconductor module has dual-sided cooling, and wherein each first terminal is an AC output terminal of the power semiconductor die.
21. A method of manufacturing a semiconductor module, the method comprising:
electrically connecting a plurality of terminals to the semiconductor die;
molding the plurality of terminals and the semiconductor die such that the semiconductor die is encased in the molding compound and the plurality of terminals protrude out of the molding compound, wherein a first terminal of the terminals has a shrink region covered by the molding compound, wherein the molding compound has a recess or opening near the shrink region of the first terminal; and
placing a coreless magnetic field sensor in the recess or the opening of the molding compound, the coreless magnetic field sensor being isolated from the first terminal by the molding compound, and the coreless magnetic field sensor being configured to generate a signal in response to a magnetic field generated by a current flowing in the constricted region of the first terminal, a magnitude of the signal being proportional to an amount of the current flowing in the constricted region of the first terminal.
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