CN111477758A - O L ED device, display panel and display device - Google Patents

O L ED device, display panel and display device Download PDF

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CN111477758A
CN111477758A CN202010363341.0A CN202010363341A CN111477758A CN 111477758 A CN111477758 A CN 111477758A CN 202010363341 A CN202010363341 A CN 202010363341A CN 111477758 A CN111477758 A CN 111477758A
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microcavity
emitting layer
light
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mode index
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刘彬
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Kunshan Govisionox Optoelectronics Co Ltd
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Kunshan Govisionox Optoelectronics Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/865—Intermediate layers comprising a mixture of materials of the adjoining active layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/12—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/18—Carrier blocking layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00

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Abstract

The technical scheme provided by the embodiment of the application is that the mode index of the microcavity corresponding to the blue light-emitting layer is set to be smaller than that of the second microcavity (the microcavity corresponding to the red light-emitting layer and/or the microcavity corresponding to the green light-emitting layer), so that when the mode index of the microcavity corresponding to the blue light-emitting layer is equal to that of the second microcavity, the color cast of the microcavity corresponding to the blue light-emitting layer is reduced, and the problem of blue cast at a large viewing angle is solved.

Description

O L ED device, display panel and display device
Technical Field
The application relates to the technical field of display, in particular to an O L ED device, a display panel and a display device.
Background
An Organic light Emitting Diode (Organic L light-Emitting Diode, O L ED), which belongs to a current type O L ED device, emits light by injecting and recombining carriers, and the light Emitting intensity is in direct proportion to the injected current, O L ED is lighter and thinner than a conventional liquid crystal display (L CD) device, and has a wider viewing angle, a faster response speed, richer colors, better contrast, and capability of realizing flexible display, etc., thus gaining wide attention.
For O L ED, the viewing angle at or near the positive viewing angle is usually called the small viewing angle, which refers to the corresponding viewing angle when facing the screen, the viewing angle at the side facing the screen is called the large viewing angle, which is generally 0 ° and 40 ° to 70 ° for the positive viewing angle, when the observer moves from the small viewing angle to the large viewing angle to watch the screen, the white picture at the small viewing angle often appears the phenomenon of bluish picture at the large viewing angle, that is, the problem of bluish picture at the large viewing angle.
Disclosure of Invention
In view of the above, the present application aims to provide an O L ED device, a display panel and a display device, so as to alleviate the problem that the O L ED is blue at a large viewing angle.
In a first aspect, an embodiment of the present application provides an O L ED device, including a first microcavity corresponding to a blue light-emitting layer, and a second microcavity corresponding to a red light-emitting layer and/or a green light-emitting layer, where a mode index of the second microcavity is greater than a mode index of the first microcavity, and the mode index is used to determine an optical thickness ratio of the light-emitting layer in the microcavity.
Preferably, the first microcavity comprises a first light-emitting layer disposed between a first anode and a first cathode, and a first optical compensation layer disposed between the first light-emitting layer and the first anode; the second microcavity includes a second light-emitting layer disposed between a second anode and a second cathode, and a second optical compensation layer disposed between the second light-emitting layer and the second anode; wherein an optical thickness proportion of the second optical compensation layer in the second microcavity is greater than an optical thickness proportion of the first optical compensation layer in the first microcavity, such that a mode index of the second microcavity is greater than a mode index of the first microcavity.
Preferably, the first optical compensation layer comprises a first hole transport layer; the second optical compensation layer comprises a second hole transport layer; wherein an optical thickness fraction of the second hole transport layer in the second microcavity is greater than an optical thickness fraction of the first hole transport layer in the first microcavity.
Preferably, the thickness of the film layer of the first hole transport layer is 20 +/-10 nm; the film thickness of the second hole transport layer is 100 +/-20 nm; wherein the optical thickness is a product of the film thickness and a film refractive index.
Preferably, the first optical compensation layer comprises a first electron blocking layer; the second optical compensation layer comprises a second electron blocking layer; wherein an optical thickness fraction of the second electron blocking layer in the second microcavity is greater than an optical thickness fraction of the first electron blocking layer in the first microcavity.
Preferably, the first optical compensation layer includes a first hole transport layer and a first electron blocking layer; the second optical compensation layer comprises a second hole transport layer and a second electron blocking layer; wherein the optical thickness ratio of the sum of the optical thicknesses of the second hole transport layer and the second electron blocking layer in the second microcavity is greater than the optical thickness ratio of the sum of the optical thicknesses of the first hole transport layer and the first electron blocking layer in the first microcavity.
Preferably, the thickness of the film layer of the first optical compensation layer is 30 +/-15 nm; the film thickness of the second optical compensation layer of the microcavity corresponding to the red light-emitting layer is 200 +/-20 nm, and/or the film thickness of the second optical compensation layer of the microcavity corresponding to the green light-emitting layer is 150 +/-20 nm; wherein the optical thickness is a product of the film thickness and a film refractive index.
Preferably, the first light-emitting layer includes a host material and a dopant material, and the dopant material is a material having an intrinsic half-peak width of 25nm or less and a fluorescence quantum efficiency of 90% or more.
Preferably, the doping material is a boron-nitrogen resonance type organic material.
Preferably, the boron-nitrogen resonance type organic material accounts for 1 to 5% by volume of the host material of the first light-emitting layer.
Preferably, the mode index of the microcavity corresponding to the red light-emitting layer is equal to the mode index of the microcavity corresponding to the green light-emitting layer.
Preferably, a ratio of the mode index of the microcavity corresponding to the red light-emitting layer, the mode index of the microcavity corresponding to the green light-emitting layer, and the mode index of the microcavity corresponding to the blue light-emitting layer is 2: 2: 1.
preferably, the mode index of the microcavity corresponding to the blue light-emitting layer is equal to 1, and the mode index of the microcavity corresponding to the red light-emitting layer is equal to 2; the mode index of the microcavity corresponding to the green light-emitting layer is equal to 2.
Preferably, the optical thickness between the center line of the first light-emitting layer and the first surface of the first anode near the first light-emitting layer is 1/2 times the optical thickness of the first microcavity; the optical thickness of the first microcavity is in direct proportion to the wavelength of the first color light emitted by the first microcavity; 3/4 optical thicknesses of the central line of the second light-emitting layer and the first surface of the second anode close to the second light-emitting layer account for the optical thickness of the second microcavity; the optical thickness of the second microcavity is proportional to the wavelength of the second color light emitted by the second microcavity.
In a second aspect, embodiments of the present application further provide a display panel including a display region including a plurality of O L ED devices as described in any one of the preceding.
In a third aspect, embodiments of the present application further provide a display device, including the display panel according to the second aspect.
The technical scheme provided by the embodiment of the application has the advantages that the microcavity effect of the microcavity corresponding to the blue light-emitting layer is weaker than the microcavity effect of the microcavity corresponding to the other light-emitting layer (green light-emitting layer or red light-emitting layer) by setting the mode index of the microcavity corresponding to the blue light-emitting layer to be smaller than the mode index of the second microcavity (red light-emitting layer corresponding to the microcavity and/or green light-emitting layer corresponding to the green microcavity), the scattering degree of the emitted blue light beam is higher than that of the microcavity effect of the microcavity corresponding to the other light-emitting layer (green light-emitting layer or red light-emitting layer), the luminance attenuation degree of the blue light-emitting layer corresponding to the blue light-emitting layer is consistent with that of the other light-emitting layer (green light-emitting layer or red light-emitting layer), namely, the luminance attenuation degree of the blue light beam is reduced or the luminance attenuation degree of the blue light-emitting layer corresponding to the other light-emitting layer is reduced, namely, the problem of the corresponding large viewing angle of the blue light-emitting layer is reduced, and the corresponding to the large viewing angle of the blue light-emitting layer is reduced.
In order to make the aforementioned objects, features and advantages of the present application more comprehensible, preferred embodiments accompanied with figures are described in detail below.
Drawings
In order to more clearly illustrate the detailed description of the present application or the technical solutions in the prior art, the drawings needed to be used in the detailed description of the present application or the prior art description will be briefly introduced below, and it is obvious that the drawings in the following description are some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative efforts.
Fig. 1 is a schematic structural diagram of an O L ED device according to an embodiment of the present disclosure;
fig. 2 is a schematic structural diagram of another O L ED device provided in an embodiment of the present application;
fig. 3 is a schematic structural diagram of a third O L ED device provided in an embodiment of the present application;
FIG. 4 is a schematic cross-sectional view of any one of the micro-cavities provided in the embodiments of the present application;
fig. 5 is a top view of a display panel according to an embodiment of the present disclosure;
fig. 6 is a schematic structural diagram of a display device according to an embodiment of the present application.
Detailed Description
To make the objects, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions of the present application will be clearly and completely described below with reference to the accompanying drawings, and it is obvious that the described embodiments are some, but not all embodiments of the present application. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
The terminology used in the embodiments of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used in the examples of the present invention and the appended claims, the singular forms "a," "an," and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise.
It should be understood that the term "and/or" as used herein is merely one type of association that describes an associated object, meaning that three relationships may exist, e.g., a and/or B may mean: a exists alone, A and B exist simultaneously, and B exists alone. In addition, the character "/" herein generally indicates that the former and latter related objects are in an "or" relationship.
It should be understood that although the terms first, second, etc. may be used to describe the microcavities in embodiments of the present invention, these microcavities should not be limited to these terms. These terms are only used to distinguish microcavities from one another. For example, a first microcavity may also be referred to as a second microcavity and, similarly, a second microcavity may also be referred to as a first microcavity without departing from the scope of embodiments of the invention.
For ease of understanding, the terms referred to in this application are first described below:
for example, the film thickness refers to the actual thickness of the film actually prepared according to the preparation process (e.g., evaporation process);
the optical thickness is the product of the film thickness and the film refractive index (referred to simply as the refractive index), i.e., for a given film, the optical thickness of the film is equal to the film thickness of the film multiplied by the refractive index of the film, e.g., for a hole transport layer, the optical thickness of the hole transport layer is equal to the film thickness of the hole transport layer multiplied by the refractive index of the hole transport layer;
the microcavity effect has the functions of selecting, narrowing, enhancing and the like on a light source, and is often used for improving the chromaticity of O L ED, enhancing the emission intensity of a specific wavelength, changing the light emitting color of O L ED and the like, but the existence of wide-angle interference can affect the visual angle characteristics of a device, namely, the light emitting peak shifts along with the shift of a visual angle, so that the problems of brightness difference, chromaticity shift and the like are caused, and particularly, the optical property is poor and the chromatic aberration is serious under a large visual angle.
At present, O L ED pursues low power consumption and high brightness, and therefore, when a device is manufactured, the mode indexes of the microcavity corresponding to the blue light emitting layer, the microcavity corresponding to the red light emitting layer, and the microcavity corresponding to the green light emitting layer are usually set to be equal (usually set to be 2), which brings some problems, such as large viewing angle color shift caused by the change of viewing angle of the viewing screen, wherein the large viewing angle color shift is caused by the different degrees of attenuation of the light emitting brightness of the light emitting regions with different colors along with the increase of the viewing angle.
For the understanding of the present embodiment, a detailed description will be given to an O L ED device disclosed in the embodiments of the present application.
As shown in fig. 1, fig. 1 is a schematic structural diagram of an O L ED device provided in an embodiment of the present disclosure, the O L ED device may include a microcavity 10 corresponding to a blue light emitting layer, a microcavity 20 corresponding to a green light emitting layer, and a microcavity 30 corresponding to a red light emitting layer, the microcavity 10 corresponding to the blue light emitting layer, the microcavity 20 corresponding to the green light emitting layer, and the microcavity 30 corresponding to the red light emitting layer may be grown on a substrate 40, the substrate 40 may be a rigid substrate such as a glass or silicon substrate, and the corresponding display panel may be a rigid display panel, and the substrate 40 may also be a flexible substrate, and the corresponding display panel may be a flexible display panel, which has characteristics of low power consumption and flexibility, and is suitable for various display devices, especially for wearable display devices.
In the embodiment of the present invention, the O L ED device may include a first microcavity and a second microcavity, where a mode index of the second microcavity is greater than a mode index of the first microcavity, so as to reduce a microcavity effect of the first microcavity, so that the microcavity effect of the first microcavity is weaker than that of the second microcavity, and a scattering degree of an outgoing light beam of the first microcavity is greater than that of an outgoing light beam of the second microcavity, so that a difference between a luminance attenuation degree of the first microcavity and a luminance attenuation degree of the second microcavity is reduced or tends to be consistent, that is, by reducing a viewing angle color shift of the first microcavity, the viewing angle color shift of the first microcavity and the viewing angle color shift of the second microcavity are reduced, and a problem that a large viewing angle is bluish when the mode indexes of the first microcavity and the second microcavity are the same is solved.
The mode index is used for determining the optical thickness ratio of light emitting layers with different colors in the corresponding microcavity, and for a fixed mode index, the light emitting layer can be arranged in any optical thickness ratio of the microcavity, but the light emitting efficiency is different, and the mode index is specifically used for determining the optical thickness ratio of the light emitting layer (referred to as the optimal light emitting layer) in the microcavity when the microcavity has the highest light emitting efficiency; for the microcavity of one color light, the mode indexes of the microcavities are different, and the optical thickness ratios of the optimal light-emitting layers are also different, that is, the optical thickness ratios of the optimal light-emitting layers corresponding to different mode indexes are different.
The mode index can be a non-zero integer, and for any microcavity, if the mode index is increased, the optical thickness of the light-emitting layer and the anode of the microcavity becomes smaller, the microcavity effect of the microcavity is weakened, and the emergent light beam becomes more divergent (i.e., the scattering degree of the emergent light beam is improved), so that the viewing angle color shift of the microcavity becomes smaller; the optical thickness of the light-emitting layer and the anode can be understood as the sum of the optical thicknesses of the film layers between the light-emitting layer of the microcavity and the anode; it is also understood that the sum of the optical thicknesses of the film layers between the central line of the light-emitting layer and the anode should be half of the optical thickness of the entire light-emitting layer.
It is to be noted that the O L ED device in this embodiment is formed by the microcavity effect, and therefore, for a specific color O L ED device, the emission wavelength has a certain relationship with the optical thickness of the microcavity (the sum of the optical thicknesses of the organic functional layers between the cathode and the anode).
The optical thickness and the light-emitting wavelength of the microcavity satisfy the following relational expression:
Figure BDA0002475859990000071
in the formula (I), L is the optical thickness of the microcavity, θijIs the sum of the phase shifts of the light at the anode and cathode, respectively, niAnd diRespectively the refractive index and the film thickness of the organic functional layer, m is the mode index, lambdamRepresenting the emission wavelength at a mode index of m.
From the above formula, the optical thickness ratio of the luminescent layer in the microcavity can be adjusted by changing the mode index m, and the adjusted emission wavelength λ of the microcavity can be changedm。
As an example, the first microcavity is a microcavity 10 (denoted by B in the figure) corresponding to the blue light-emitting layer, the second microcavity is a microcavity 30 (denoted by R in the figure) corresponding to the red light-emitting layer, that is, the optical thickness of the light-emitting layer of the microcavity corresponding to the red light-emitting layer in the microcavity corresponding to the red light-emitting layer is larger than the optical thickness of the light-emitting layer of the microcavity corresponding to the blue light-emitting layer in the microcavity, so that the microcavity effect of the microcavity corresponding to the blue light-emitting layer is reduced, and the degree of scattering of the emitted blue light beam is increased, resulting in a reduced degree of luminance attenuation of the microcavity corresponding to the blue light-emitting layer, since the mode index of the microcavity corresponding to the blue light-emitting layer is reduced, so that the microcavity effect of the microcavity corresponding to the blue light-emitting layer is weaker than the microcavity effect of the microcavity corresponding to the red microcavity, the degree of scattering of the emitted blue light beam is higher than the degree of scattering of the red light beam, so that the microcavity effect of the microcavity corresponding to the blue light-emitting layer is reduced, and the difference in the viewing angle of the red light-emitting layer corresponding to the red light-emitting layer is reduced.
As another example, the microcavity effect of the microcavity corresponding to the blue light-emitting layer is reduced and the scattering degree of the blue light beam is increased, so that the luminance attenuation degree of the microcavity corresponding to the blue light-emitting layer is reduced, and therefore, the mode index of the microcavity corresponding to the blue light-emitting layer is smaller than the mode index of the microcavity corresponding to the green light-emitting layer, so that the microcavity effect of the microcavity corresponding to the blue light-emitting layer is weaker than the microcavity effect of the microcavity corresponding to the green light-emitting layer, and the microcavity effect of the microcavity corresponding to the blue light-emitting layer is higher than the scattering degree of the green light beam, so that the microcavity effect of the microcavity corresponding to the green light-emitting layer is weaker than the mode index of the microcavity corresponding to the green light-emitting layer, so that the scattering degree of the blue light beam is higher than the green light beam, so that the difference of the microcavity effect of the green light beam is reduced, and the difference of the viewing angle of the blue light-emitting layer corresponding to the red light-emitting layer is reduced, and the microcavity effect of the blue light-emitting layer is reduced when the microcavity effect of the blue light-emitting layer is reduced and the viewing angle of the blue light-emitting layer is reduced.
As another example, the first microcavity 10 corresponds to the blue light-emitting layer, and the second microcavity includes the microcavity 20 corresponding to the green light-emitting layer and the microcavity 30 corresponding to the red light-emitting layer, for example, the mode index of the microcavity 30 corresponding to the red light-emitting layer may be equal to the mode index of the microcavity 20 corresponding to the green light-emitting layer, that is, the optical thickness ratio of the light-emitting layer of the microcavity corresponding to the red light-emitting layer in the microcavity corresponding to the red light-emitting layer and the optical thickness ratio of the light-emitting layer of the microcavity corresponding to the green light-emitting layer in the microcavity are both greater than the optical thickness ratio of the light-emitting layer of the microcavity corresponding to the blue light-emitting layer in the corresponding to the green light-emitting layer in the corresponding to the microcavity, for the microcavity corresponding to the blue light-emitting layer, since the mode index of the microcavity corresponding to the blue light-emitting layer is adjusted to be smaller, the microcavity effect of the microcavity corresponding to be weaker, the microcavity for the blue light-emitting layer, the degree of scattering of the blue light beam is increased, and the degree of scattering of microcavity corresponding to be decreased, as the effect of the microcavity corresponding to be decreased, when the blue light-emitting layer corresponding to the blue light-emitting layer (e) is adjusted, the red light-emitted from the microcavity, the red light-emitting layer, the microcavity corresponding to be decreased, the red light-emitting layer, and the red light-emitting layer, the.
In the embodiment of the present invention, the O L ED device may include various types, for example, the O L ED device may be classified into a top emission type O L ED device or a bottom emission type O L ED device according to the emission direction of light, in which the top emission type O L ED device is a device in which an anode grown on a substrate is set to an opaque electrode, a cathode at the top is set to a transparent electrode or a semitransparent electrode, and light is emitted from the cathode at the top when a voltage is applied, and the bottom emission type O L ED device is a device in which an anode grown on a substrate is set to a transparent electrode or a semitransparent electrode, a cathode at the top is set to an opaque electrode, and light is emitted from an anode at the bottom when a voltage is applied.
According to the embodiment of the application, the mode index of the microcavity corresponding to the blue light emitting layer is adjusted to be small, so that the visual angle color cast effect of blue light is improved, the difference of the brightness of the light emitting regions with different colors along with the increase of the visual angle is reduced or tends to be consistent, and the problem that a white picture under a normal viewing angle is blue under a large visual angle is further solved.
In some embodiments, the specific value of the mode index may be determined according to actual needs. For example, for the problem of overall bluing at large viewing angles, the mode index of the first microcavity and the mode index of the second microcavity may be set to 1: 2. For example, when the second microcavity includes a microcavity corresponding to the red light-emitting layer and a microcavity corresponding to the green light-emitting layer, a ratio of the mode index of the microcavity corresponding to the red light-emitting layer, the mode index of the microcavity corresponding to the green light-emitting layer, and the mode index of the microcavity corresponding to the blue light-emitting layer may be 2: 2: compared with the mode index of the microcavity corresponding to the red light-emitting layer, the mode index of the microcavity corresponding to the green light-emitting layer and the mode index of the microcavity corresponding to the blue light-emitting layer being 1:1:1, the mode index of the microcavity corresponding to the blue light-emitting layer is reduced, so that the microcavity effect of the microcavity corresponding to the blue light-emitting layer is weakened, the scattering degree of the emitted blue light beam is improved, the brightness attenuation degree of the microcavity corresponding to the blue light-emitting layer is reduced, and the viewing angle color shift of the microcavity corresponding to the blue light-emitting layer is reduced, therefore, the ratio of the mode index of the microcavity corresponding to the red light-emitting layer, the mode index of the microcavity corresponding to the green light-emitting layer and the mode index of: 2: the microcavity effect of the microcavity corresponding to the blue light-emitting layer is weaker than that of the microcavity corresponding to other light-emitting layers (green light-emitting layer and red light-emitting layer), the scattering degree of the emitted blue light beam is higher than that of other color light (green light and red light), so that the difference between the brightness attenuation degree of the microcavity corresponding to the blue light-emitting layer and that of the microcavity corresponding to other light-emitting layers is reduced or tends to be consistent, the brightness attenuation degrees of the microcavity corresponding to the red light-emitting layer, the microcavity corresponding to the blue light-emitting layer and the microcavity corresponding to the green light-emitting layer tend to be consistent with the increase of the viewing angle, and the problem that the large viewing angle is blue.
For another example, in order to meet the requirements of O L ED on thin thickness, high light-emitting efficiency, and small viewing angle color shift, the mode index of the first microcavity may be set to 1, and the mode index of the second microcavity may be set to 2 according to the relational expression between the optical thickness of the microcavity and the light-emitting wavelength, as an example, when the second microcavity includes a microcavity corresponding to the red light-emitting layer and a microcavity corresponding to the green light-emitting layer, the mode index of the microcavity corresponding to the red light-emitting layer is set to 2, and the mode index of the microcavity corresponding to the green light-emitting layer is set to 2.
In an embodiment of the present invention, for the first microcavity, the first microcavity may include a first light-emitting layer, a first anode, and a first cathode, the first light-emitting layer is located between the first anode and the first cathode, and the first light-emitting layer is configured to emit blue light, when the mode index of the first microcavity is set to 1, in order to maximize the light-emitting efficiency of the first microcavity, it is determined according to formula (one) that the light-emitting layer of the first microcavity should be located at 1/2 of the first microcavity, and the light-emitting layer of the first microcavity is characterized by an optical thickness ratio at 1/2 of the first microcavity: the ratio of the optical thickness from the center line of the first light-emitting layer to the first anode to the optical thickness from the first cathode is 1:1, or the optical thickness from the center line of the first light-emitting layer to the first surface of the first anode close to the first light-emitting layer accounts for 1/2 of the optical thickness of the first microcavity, and the optical thickness of the first microcavity is the sum of the optical thicknesses of all film layers between the first surface of the first anode close to the first light-emitting layer and the first surface of the first cathode close to the light-emitting layer; the first surface of the first anode is opposite to the first surface of the first cathode, and the optical thickness of the first microcavity is proportional to the wavelength of the first color light emitted by the first microcavity. For the second microcavity, the second microcavity may include a second light-emitting layer, a second anode and a second cathode, the second light-emitting layer is located between the second anode and the second cathode, the second light-emitting layer is configured to emit red light and/or green light, when the mode index of the second microcavity is set to 2, in order to maximize the light-emitting efficiency of the second microcavity, it is determined according to formula (one) that the light-emitting layer of the second microcavity should be located at 3/4 of the second microcavity, and the light-emitting layer of the second microcavity is characterized by an optical thickness ratio at 3/4 of the second microcavity as follows: the ratio of the optical thickness from the center line of the second light-emitting layer to the second anode to the optical thickness from the second cathode is 3:1, or the optical thickness from the center line of the second light-emitting layer to the first surface of the second anode close to the second light-emitting layer accounts for 3/4 of the optical thickness of the second microcavity, and the optical thickness of the second microcavity is the sum of the optical thicknesses of all film layers between the first surface of the second anode close to the second light-emitting layer and the first surface of the second cathode close to the second light-emitting layer; the first surface of the second anode is opposite to the first surface of the second cathode, and the optical thickness of the second microcavity is proportional to the wavelength of the second color light emitted by the second microcavity. The first surface of the first anode and the first surface of the first cathode are reflective surfaces. The first surface of the second anode and the first surface of the second cathode are reflective surfaces.
In addition, a microcavity with a mode index of 1 may be referred to as a first-order microcavity, and a microcavity with a mode index of 2 may be referred to as a second-order microcavity.
Referring to fig. 2, the microcavity 10 corresponding to the blue light-emitting layer includes a blue anode 11 (first anode), a blue optical compensation layer 12 (first optical compensation layer) disposed on the blue anode 11, a blue light-emitting layer 13 (first light-emitting layer) disposed on the blue optical compensation layer 12, and a blue cathode 14 (first cathode) disposed on the blue light-emitting layer 13.
The microcavity 20 for the green light-emitting layer includes a green anode 21 (second anode), a green optical compensation layer 22 (second optical compensation layer) disposed on the green anode 21, a green light-emitting layer 23 (second light-emitting layer) disposed on the green optical compensation layer 22, and a green cathode 24 (second cathode) disposed on the green light-emitting layer 23.
The microcavity 30 for the red light-emitting layer includes a red anode 31 (second anode), a red optical compensation layer 32 (second optical compensation layer) provided on the red anode 31, a red light-emitting layer 33 (second light-emitting layer) provided on the red optical compensation layer 32, and a red cathode 34 (second cathode) provided on the red light-emitting layer 33.
The optical thickness (L1B) between the center line of the blue light-emitting layer 13 of the microcavity 10 corresponding to the blue light-emitting layer and the first surface (upper surface) of the blue anode 11 accounts for 1/2 the optical thickness (L B) of the microcavity corresponding to the blue light-emitting layer, the optical thickness of the microcavity 10 corresponding to the blue light-emitting layer is the optical thickness between the first surface of the blue anode 11 and the first surface (lower surface) of the blue cathode 14, wherein the first surface of the blue anode 11 is opposite to the first surface of the blue cathode 14, the optical thickness of the microcavity 10 corresponding to the blue light-emitting layer is proportional to the wavelength of the blue light emitted from the microcavity 10 corresponding to the blue light-emitting layer, and the first surfaces of the blue anode and the blue cathode are reflective surfaces.
The optical thickness (represented by L2) of the center line of the green light-emitting layer 23 of the microcavity 20 corresponding to the green light-emitting layer and the first surface (upper surface) of the green anode 21 accounts for 3/4 of the optical thickness (represented by L G) of the microcavity 20 corresponding to the green light-emitting layer, the optical thickness of the microcavity 20 corresponding to the green light-emitting layer is the optical thickness between the first surface of the green anode 21 and the first surface (lower surface) of the green cathode 24, wherein the first surface of the green anode 21 is opposite to the first surface of the green cathode 24, the optical thickness of the microcavity 20 corresponding to the green light-emitting layer is proportional to the wavelength of the green light emitted from the microcavity 20 corresponding to the green light-emitting layer, and the first surfaces of the green anode and the green cathode are reflective surfaces.
The optical thickness of the center line of the red light-emitting layer 33 of the microcavity 30 corresponding to the red light-emitting layer and the first surface (upper surface) of the red anode 31 accounts for 3/4 of the optical thickness (represented by L R) of the microcavity 30 corresponding to the red light-emitting layer, the optical thickness of the microcavity 30 corresponding to the red light-emitting layer is the optical thickness between the first surface of the red anode 31 and the first surface (lower surface) of the red cathode 34, wherein the first surface of the red anode is opposite to the first surface of the red cathode, the optical thickness of the microcavity 30 corresponding to the red light-emitting layer is proportional to the wavelength of the red light emitted from the microcavity 30 corresponding to the red light-emitting layer, and the first surface of the red anode and the first surface of the red cathode are reflective surfaces.
For example, by setting the relationship between the optical thickness L1 of the blue light-emitting layer 13 of the microcavity corresponding to the blue light-emitting layer to the blue anode 11 and the optical thickness L B of the microcavity corresponding to the blue light-emitting layer such that the mode index of the microcavity corresponding to the blue light-emitting layer is equal to 1, L1 is equal to L B/2;
the mode index of the microcavity corresponding to the green light-emitting layer is made equal to 2 by setting the relationship of the optical thickness L2 of the green light-emitting layer 23 of the microcavity corresponding to the green light-emitting layer to the green anode 21 and the optical thickness L G of the microcavity corresponding to the green light-emitting layer to L2 ═ 3L G/4.
The mode index of the microcavity corresponding to the red light-emitting layer is made equal to 2 by setting the relationship between the optical thickness L3 from the red light-emitting layer 33 to the red anode 31 of the microcavity corresponding to the red light-emitting layer and the optical thickness L R of the microcavity corresponding to the red light-emitting layer to L3 ═ 3L R/4.
In some embodiments, adjusting the mode index of the microcavity (which may also be referred to as configuring) may be accomplished in a variety of ways, as further described below in connection with specific examples.
As one example, the adjustment of the mode index of the microcavity can be achieved by adjusting the optical thickness fraction of the light-emitting layer in the microcavity by adjusting the optical thickness fraction of an optical compensation layer located between the light-emitting layer and the anode. For example, the first microcavity may further include a first optical compensation layer disposed between the first light-emitting layer and the first anode; the second microcavity may further include a second optical compensation layer disposed between the second light-emitting layer and the second anode; and the optical thickness ratio of the second optical compensation layer in the second microcavity is larger than that of the first optical compensation layer in the first microcavity, so that the mode index of the second microcavity is larger than that of the first microcavity.
As another example, the optical compensation layer may include a hole transport layer and an electron blocking layer, and the optical thickness ratio of the light emitting layer in the microcavity may be adjusted by adjusting the optical thickness ratio of the hole transport layer and/or the electron blocking layer, thereby achieving adjustment of the mode index of the microcavity.
For example, the first optical compensation layer includes a first hole transport layer; the second optical compensation layer comprises a second hole transport layer; and the optical thickness ratio of the second hole transport layer in the second microcavity is larger than that of the first hole transport layer in the first microcavity, so that the mode index of the second microcavity is larger than that of the first microcavity. In addition, the influence of the change of the microcavity structure on the carrier transmission can be reduced by adjusting the optical thickness ratio of the hole transmission layer in the optical compensation layer and adjusting the mode index.
For another example, the first optical compensation layer includes a first electron blocking layer; the second optical compensation layer comprises a second electron blocking layer; and the optical thickness ratio of the second electron blocking layer in the second microcavity is larger than that of the first electron blocking layer in the first microcavity, so that the mode index of the second microcavity is larger than that of the first microcavity.
For another example, the first optical compensation layer includes a first hole transport layer and a first electron blocking layer; the second optical compensation layer comprises a second hole transport layer and a second electron blocking layer; and the optical thickness ratio of the sum of the optical thicknesses of the second hole transport layer and the second electron blocking layer in the second microcavity is larger than that of the sum of the optical thicknesses of the first hole transport layer and the first electron blocking layer in the first microcavity, so that the mode index of the second microcavity is larger than that of the first microcavity.
Referring to fig. 3, the blue optical compensation layer 32 includes a blue hole transport layer (first hole transport layer) and a blue electron blocking layer (first electron blocking layer), the optical thickness of the blue hole transport layer of the microcavity 10 corresponding to the blue light-emitting layer is L122, the optical thickness of the blue electron blocking layer is L121, and when the mode index of the microcavity corresponding to the blue light-emitting layer is adjusted, for example, the optical thickness ratio of L121 in L B, the optical thickness ratio of L122 in L B, or the optical thickness ratio of L121 + L122 in L B can be adjusted.
For example, by adjusting the optical thickness ratio of L121 in L B, or the optical thickness ratio of L122 in L B, or the optical thickness ratio of L121 + L122 in L B, L1 ═ L B/2 is set, that is, the mode index of the microcavity corresponding to the blue light-emitting layer is set to 1.
For another example, the film thickness of the blue hole transport layer corresponding to L122 is set to 20 ± 10nm, so that L1 ═ L B/2, i.e., the mode index of the microcavity corresponding to the blue light-emitting layer is set to 1, where ± 10nm is an error value determined by the difference in refractive index of the blue hole transport layer.
Preferably, the film thickness of the blue hole transport layer corresponding to L122 is set to 25 nm.
For another example, the sum of the thickness of the blue electron blocking layer corresponding to L121 and the thickness of the blue hole transporting layer corresponding to L122 is set to 30 ± 15nm, such that L1 is L B/2, i.e., the mode index of the microcavity corresponding to the blue light emitting layer is set to 1, where ± 15nm is an error value determined by the difference in the refractive index of the blue electron blocking layer and the difference in the refractive index of the blue hole transporting layer.
Preferably, the sum of the film thickness of the blue electron blocking layer corresponding to L121 and the film thickness of the blue hole transporting layer corresponding to L122 is set to 35 nm.
The green optical compensation layer 22 comprises a green hole transport layer (second hole transport layer) and a green electron blocking layer (second electron blocking layer), the optical thickness of the green hole transport layer of the microcavity 20 corresponding to the green light-emitting layer is represented by L222, the optical thickness of the green electron blocking layer is represented by L221, and when the mode index of the microcavity corresponding to the green light-emitting layer is adjusted, for example, the optical thickness ratio of L221 in L G, the optical thickness ratio of L222 in L G, or the optical thickness ratio of L221 + L222 in L G can be adjusted.
For example, by adjusting the optical thickness ratio of L221 in L G, or the optical thickness ratio of L222 in L G, or the optical thickness ratio of L221 + L222 in L G, L2 is 3L G/4, that is, the mode index of the microcavity corresponding to the green light emitting layer is set to 2.
For another example, the film thickness of the green hole transport layer corresponding to L222 is set to 100 ± 20nm, so that L2 ═ 3L G/4, i.e., the mode index of the microcavity corresponding to the green light-emitting layer is set to 2, where ± 20nm is an error value determined by the difference in refractive index of the green hole transport layer.
Preferably, the film thickness of the green hole transport layer corresponding to L222 is set to 110 nm.
For another example, the sum of the thickness of the green electron blocking layer corresponding to L221 and the thickness of the green hole transporting layer corresponding to L222 is set to 150 ± 20nm, so that L2 is 3L G/4, i.e., the mode index of the microcavity corresponding to the green light emitting layer is set to 2, where ± 20nm is an error value determined by the difference in the refractive index of the green electron blocking layer and the difference in the refractive index of the green hole transporting layer.
Preferably, the sum of the film thickness of the green electron blocking layer corresponding to L221 and the film thickness of the green hole transporting layer corresponding to L222 nm is set to 160 nm.
The red optical compensation layer 22 comprises a red hole transport layer (second hole transport layer) and a red electron blocking layer (second electron blocking layer), wherein the optical thickness of the red hole transport layer of the microcavity 30 corresponding to the red light-emitting layer is L322, the optical thickness of the red electron blocking layer is L321, and when the mode index of the microcavity corresponding to the red light-emitting layer is adjusted, for example, the optical thickness ratio of L321 in L R, the optical thickness ratio of L322 in L R, or the optical thickness ratio of L321 + L322 in L G can be adjusted.
For example, the optical thickness ratio of 59321 in L R, or the optical thickness ratio of L322 in L R, or the optical thickness ratio of L321 + L322 in L G may be adjusted so that L is 3L R/4, that is, the mode index of the microcavity corresponding to the red light-emitting layer is set to 2.
For another example, the film thickness of the red hole transport layer corresponding to L322 is set to 100 ± 20nm, so that L3 is 3L R/4, that is, the mode index of the microcavity corresponding to the red light-emitting layer is set to 2, where ± 20nm is an error value determined by the difference in refractive index of the red hole transport layer.
In this embodiment, the film thickness of the red hole transport layer corresponding to L322 is set to 110 nm.
For another example, the sum of the film thickness of the red electron blocking layer corresponding to L321 and the film thickness of the red hole transporting layer corresponding to L322 is set to 200 ± 20nm, so that L3 is 3L R/4, that is, the mode index of the microcavity corresponding to the red light emitting layer is set to 2, where ± 20nm is an error value determined by the refractive index difference of the red electron blocking layer and the refractive index difference of the red hole transporting layer.
In this embodiment, the sum of the thickness of the red electron blocking layer corresponding to L321 and the thickness of the red hole transporting layer corresponding to L322 is set to 210 nm.
It should be noted that the thickness of the blue electron blocking layer, the thickness of the blue hole transport layer, the sum of the thicknesses of the blue hole transport layer and the blue electron blocking layer, the thickness of the green hole transport layer, the sum of the thicknesses of the green hole transport layer and the green electron blocking layer, and the sum of the thicknesses of the red electron blocking layer, the red hole transport layer and the red electron blocking layer are values obtained by taking the refractive index of the corresponding layers into consideration when the film thickness of the blue electron blocking layer, the film thickness of the blue hole transport layer, the sum of the thicknesses of the blue hole transport layer and the blue electron blocking layer, and the sum of the thicknesses of.
The mode index of the first microcavity is 1 and the mode index of the second microcavity is 2 by setting the film thickness of the first hole transport layer to be 20 +/-10 nm, the film thickness of the second hole transport layer to be 100 +/-20 nm, or the film thickness of the first optical compensation layer to be 30 +/-15 nm, the film thickness of the second optical compensation layer of the microcavity corresponding to the red light-emitting layer to be 200 +/-20 nm, and/or the film thickness of the second optical compensation layer of the microcavity corresponding to the green light-emitting layer to be 150 +/-20 nm, so that the O L ED has high luminous efficiency and small color cast under a large viewing angle.
Referring to fig. 4, any one of the micro-cavities may specifically include an anode, a cathode, and an organic functional layer disposed between the anode and the cathode, and the organic functional layer may be formed by evaporation;
in the direction from the anode to the cathode, the organic functional layer comprises a hole injection layer, a hole transport layer, an electron blocking layer, a light emitting layer, a hole blocking layer, an electron transport layer and an electron injection layer which are arranged in sequence; wherein, the optical thickness of the microcavity can be adjusted by adjusting the optical thickness of any film layer (such as a hole injection layer) of the organic functional layer between the anode and the cathode.
When a voltage is applied to the anode and the cathode, holes and electrons are respectively transported and moved to a light emitting layer in the organic functional layer, the holes and the electrons are combined in the light emitting layer to form excitons, the excitons migrate under the action of an electric field, energy is transferred to a light emitting material (such as a fluorescent material) in the light emitting layer, and the electrons in the light emitting material are excited to transition from a ground state to an excited state, and the excited state energy generates photons through radiation deactivation, thereby releasing light energy.
Light rays formed in the light emitting layer are reflected back and forth in the microcavity structure and undergo optical interference, actually, the microcavity formed by the anode and the cathode is a fabry-perot cavity (resonant cavity), and when the micro-optical thickness and the wavelength of light waves satisfy a certain relationship, light with a specific wavelength (the wavelength of a certain monochromatic light) is enhanced, the spectrum is narrowed, and the microcavity effect occurs. The microcavity effect has the functions of selecting, narrowing and enhancing a light source, and is often used to improve the chromaticity of the device, enhance the emission intensity of a specific wavelength, change the light emission color of the device, and the like.
In the prior art, the microcavity effect includes two interference modes, namely wide-angle interference and multi-beam interference, wherein the wide-angle interference affects the viewing angle characteristics of the device, that is, the luminance difference and chromaticity drift are caused by the shift of the light-emitting peak along with the shift of the viewing angle, and particularly under a large viewing angle, the microcavity effect has poor optical properties and more serious color cast.
In order to solve the above problem, in the embodiment of the present application, the number of the stages of the micro-cavities with different colors is adjusted, where the micro-cavity corresponding to the blue light emitting layer is set as a first-order micro-cavity, the micro-cavity corresponding to the red light emitting layer and/or the micro-cavity corresponding to the green light emitting layer is set as a second-order micro-cavity, so that the color shift of the viewing angle of blue light is improved, and thus the problem that the large viewing angle.
Further, the anode is formed on the substrate (not shown in fig. 4), and a capping layer (not shown in fig. 4) may be further formed over the cathode.
It should be understood that, in the above embodiments, the optical thickness ratio adjustment is performed only for a specific film layer in the microcavity, and the optical thickness or the film thickness of other film layers is not changed, that is, the optical thickness or the film thickness of other film layers in the microcavity may be set conventionally, and this embodiment is not limited specifically.
Since the mode index of the microcavity corresponding to the blue light-emitting layer is reduced, a certain loss occurs in the light-emitting efficiency.
In some embodiments, the light emitting efficiency can be compensated by adjusting the material of the light emitting layer or the content of the material of the light emitting layer.
As an example, the first light emitting layer may include a host material and a dopant material, and the loss of light emitting efficiency may be compensated for by adjusting the host material and/or the dopant material of the light emitting layer.
For example, the doping material is selected from a material with a narrow half-peak width; that is, the first light emitting layer can be obtained by doping a doping material with a narrow half-peak width in the matrix material.
The problem of luminous efficiency loss caused by reducing the microcavity mode index corresponding to the blue luminous layer is solved through the higher luminous efficiency of the material with the narrow half-peak width, and meanwhile, the problem of the visual angle color shift improvement effect caused by reducing the mode index is larger than the problem of the visual angle deterioration caused by the material with the narrow half-peak width.
For another example, the host material of the first light-emitting layer is an electronic organic material; the doping material of the first light-emitting layer is a material with intrinsic half-peak width less than or equal to 25nm and fluorescence quantum efficiency more than or equal to 90%.
For another example, the host material is an anthracene derivative organic material, and the dopant material is a boron-nitrogen resonance type organic material.
As another example, the first light emitting layer may include a host material and a dopant material, and the loss of light emitting efficiency may be compensated for by adjusting the content of the host material and/or the dopant material of the light emitting layer.
For example, the boron-nitrogen resonance type organic material may be provided in an amount of 1% to 5% by volume based on the matrix material of the first light-emitting layer.
In this embodiment, the first light-emitting layer is a blue light-emitting layer, and the blue light-emitting layer can be prepared by doping 1% to 5% by volume of a B-N (boron-nitrogen) resonance type organic material on an anthracene derivative (blue matrix material), so as to compensate for a loss of light-emitting efficiency caused by a decrease in a microcavity mode index corresponding to the blue light-emitting layer.
Fig. 5 is a schematic structural diagram of a display device according to an embodiment of the present invention, and as shown in fig. 5, the display panel includes a display area 101, and the display area includes a plurality of O L ED devices.
Specifically, the display panel includes a display area 101 and a non-display area 102 surrounding the display area, the display area 101 includes a plurality of pixel regions S, the pixel regions S are arranged in an array, and each pixel region S includes one O L ED device.
Fig. 6 is a schematic structural diagram of a display device according to an embodiment of the present invention, and as shown in fig. 6, a display device 200 according to an embodiment of the present invention includes the display panel 100.
Since the display device 200 employs the display panel 100, the display device 200 also has the beneficial effects of the display panel 100 mentioned in the above embodiments.
It should be noted that the display device 200 provided in the embodiment of the present invention may further include other circuits and devices for supporting the normal operation of the display device 200.
It should be noted that, although fig. 6 uses a mobile phone as an example, the display apparatus is not limited to the mobile phone, and specifically, the display apparatus includes, but is not limited to, any electronic device having a display function, such as a Personal Computer (PC), a Personal Digital Assistant (PDA), a wearable display device, electronic paper, an electronic photo frame, a wireless handheld device, a Tablet Computer (Tablet Computer), an MP4 player, or a television.
Finally, it should be noted that: the above-mentioned embodiments are only specific embodiments of the present application, and are used for illustrating the technical solutions of the present application, but not limiting the same, and the scope of the present application is not limited thereto, and although the present application is described in detail with reference to the foregoing embodiments, those skilled in the art should understand that: any person skilled in the art can modify or easily conceive the technical solutions described in the foregoing embodiments or equivalent substitutes for some technical features within the technical scope disclosed in the present application; such modifications, changes or substitutions do not depart from the spirit and scope of the exemplary embodiments of the present application, and are intended to be covered by the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.

Claims (10)

1. An O L ED device, comprising:
the first microcavity is a microcavity corresponding to the blue light-emitting layer;
the second microcavity is a microcavity corresponding to the red light-emitting layer and/or a microcavity corresponding to the green light-emitting layer;
the mode index of the second microcavity is larger than that of the first microcavity, and the mode index is used for determining the optical thickness ratio of the light-emitting layer in the microcavity.
2. The O L ED device of claim 1,
the first microcavity includes a first light-emitting layer disposed between a first anode and a first cathode, and a first optical compensation layer disposed between the first light-emitting layer and the first anode;
the second microcavity includes a second light-emitting layer disposed between a second anode and a second cathode, and a second optical compensation layer disposed between the second light-emitting layer and the second anode;
wherein an optical thickness proportion of the second optical compensation layer in the second microcavity is greater than an optical thickness proportion of the first optical compensation layer in the first microcavity, such that a mode index of the second microcavity is greater than a mode index of the first microcavity.
3. The O L ED device of claim 2,
the first optical compensation layer comprises a first hole transport layer and/or a first electron blocking layer;
the second optical compensation layer comprises a second hole transport layer and/or a second electron blocking layer;
wherein an optical thickness fraction of the second hole transport layer and/or the second electron blocking layer in the second microcavity is greater than an optical thickness fraction of the first hole transport layer and/or the first electron blocking layer in the first microcavity.
4. The O L ED device of claim 3,
the film thickness of the first hole transport layer is 20 +/-10 nm;
the film thickness of the second hole transport layer is 100 +/-20 nm;
the film thickness of the first optical compensation layer is 30 +/-15 nm;
the film thickness of the second optical compensation layer of the microcavity corresponding to the red light-emitting layer is 200 +/-20 nm, and/or the film thickness of the second optical compensation layer of the microcavity corresponding to the green light-emitting layer is 150 +/-20 nm;
wherein the optical thickness is a product of the film thickness and a film refractive index.
5. The O L ED device according to claim 2, wherein the first light emitting layer comprises a host material and a dopant material, and the dopant material is a material with intrinsic half-peak width of 25nm or less and fluorescence quantum efficiency of 90% or more.
6. The O L ED device according to claim 5, wherein the doping material is a boron-nitrogen resonance type organic material, preferably the boron-nitrogen resonance type organic material accounts for 1-5% of the volume of the host material of the first light-emitting layer.
7. The O L ED device according to any one of claims 1-6, wherein the mode index of the microcavity corresponding to the red light-emitting layer is equal to the mode index of the microcavity corresponding to the green light-emitting layer, preferably the ratio of the mode index of the microcavity corresponding to the red light-emitting layer to the mode index of the microcavity corresponding to the green light-emitting layer to the mode index of the microcavity corresponding to the blue light-emitting layer is 2: 2: 1, preferably the mode index of the microcavity corresponding to the blue light-emitting layer is equal to 1, the mode index of the microcavity corresponding to the red light-emitting layer is equal to 2, and the mode index of the microcavity corresponding to the green light-emitting layer is equal to 2.
8. The O L ED device of claim 2, wherein an optical thickness between a centerline of the first light emitting layer and a first surface of the first anode proximate to the first light emitting layer is 1/2 of an optical thickness of the first microcavity, wherein the optical thickness of the first microcavity is proportional to a wavelength of the first color light exiting the first microcavity;
3/4 optical thickness between the center line of the second light emitting layer and the first surface of the second anode near the second light emitting layer is equal to the optical thickness of the second microcavity; the optical thickness of the second microcavity is proportional to the wavelength of the second color light emitted by the second microcavity.
9. A display panel comprising a display area comprising a plurality of O L ED devices according to any one of claims 1-8.
10. A display device characterized by comprising the display panel according to claim 9.
CN202010363341.0A 2020-04-30 2020-04-30 O L ED device, display panel and display device Pending CN111477758A (en)

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Application publication date: 20200731