CN111477571A - Silicon wafer cleaning mechanism and liquid replacement and supplement process thereof - Google Patents
Silicon wafer cleaning mechanism and liquid replacement and supplement process thereof Download PDFInfo
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- CN111477571A CN111477571A CN202010321321.7A CN202010321321A CN111477571A CN 111477571 A CN111477571 A CN 111477571A CN 202010321321 A CN202010321321 A CN 202010321321A CN 111477571 A CN111477571 A CN 111477571A
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- 239000007788 liquid Substances 0.000 title claims abstract description 335
- 238000004140 cleaning Methods 0.000 title claims abstract description 119
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 67
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 67
- 239000010703 silicon Substances 0.000 title claims abstract description 67
- 238000000034 method Methods 0.000 title claims abstract description 29
- 230000008569 process Effects 0.000 title claims abstract description 27
- 230000007246 mechanism Effects 0.000 title claims abstract description 17
- 239000013589 supplement Substances 0.000 title description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 201
- 239000003814 drug Substances 0.000 claims abstract description 196
- 239000000126 substance Substances 0.000 claims abstract description 94
- 235000012431 wafers Nutrition 0.000 claims abstract description 69
- 230000001502 supplementing effect Effects 0.000 claims abstract description 10
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical group [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 51
- 239000000243 solution Substances 0.000 claims description 51
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical group OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 37
- 239000011259 mixed solution Substances 0.000 claims description 29
- 238000003860 storage Methods 0.000 claims description 18
- 239000013543 active substance Substances 0.000 claims description 11
- 239000003513 alkali Substances 0.000 claims description 10
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 9
- 239000002585 base Substances 0.000 claims description 6
- 238000002360 preparation method Methods 0.000 claims description 4
- 230000002093 peripheral effect Effects 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 8
- 238000011086 high cleaning Methods 0.000 abstract description 3
- 238000007599 discharging Methods 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000003921 oil Substances 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 238000004064 recycling Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000012190 activator Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Electromagnetism (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The invention provides a silicon wafer cleaning mechanism and a liquid replacement and replenishment process, which sequentially comprise a pre-cleaning unit, a liquid medicine cleaning unit, a primary rinsing unit, a chemical liquid rinsing unit, a secondary rinsing unit and a full-pulling unit, wherein at least one pure water tank is arranged in each of the pre-cleaning unit, the primary rinsing unit, the secondary rinsing unit and the full-pulling unit; the liquid medicine cleaning unit is provided with a plurality of first liquid medicine grooves; the chemical liquid rinsing unit is at least provided with a second liquid medicine groove; the liquid medicine cleaning unit and the chemical liquid rinsing unit are used together or together with the pre-cleaning unit, the primary rinsing unit, the secondary rinsing unit and the full pulling unit for synchronously supplementing or replacing liquid. The cleaning mechanism and the liquid replacement and replenishment process have the advantages of good cleaning effect and high cleaning quality, increase the quantity of the liquid replacement and cleaning of the silicon wafers, reduce the liquid replacement times, improve the product productivity and save the cost.
Description
Technical Field
The invention belongs to the technical field of solar silicon wafer cleaning, and particularly relates to a silicon wafer cleaning mechanism and a liquid replacement and supplement process thereof.
Background
The cleaning of the silicon wafer is one of the key steps of the processing of the silicon wafer, and the electrical performance and the appearance quality of the silicon wafer are directly influenced by the quality of the cleaning of the silicon wafer. The existing cleaning liquid replacement process has the advantages of frequent liquid replacement, unstable cleaning effect, high time and high production cost.
Therefore, how to optimize the liquid replacement and replenishment process is the key for processing the silicon wafer with high quality and low cost, and the liquid replacement times are reduced, and meanwhile, the production efficiency is improved and the energy consumption is reduced under the condition of ensuring the cleaning quality.
Disclosure of Invention
The invention provides a silicon wafer cleaning mechanism and a liquid replacement and supplement process thereof, which solve the technical problem of poor cleaning quality caused by unreasonable liquid replacement and supplement process in the prior art.
In order to solve the technical problems, the invention adopts the technical scheme that:
a silicon wafer cleaning mechanism sequentially comprises a pre-cleaning unit, a liquid medicine cleaning unit, a primary rinsing unit, a chemical liquid rinsing unit, a secondary rinsing unit and a full pulling unit, wherein at least one pure water tank is arranged in each of the pre-cleaning unit, the primary rinsing unit, the secondary rinsing unit and the full pulling unit; the liquid medicine cleaning unit is provided with a plurality of first liquid medicine grooves; the chemical liquid rinsing unit is at least provided with a second liquid medicine groove; the liquid medicine cleaning unit and the chemical liquid rinsing unit are used together or together with the pre-cleaning unit, the primary rinsing unit, the secondary rinsing unit and the full pulling unit for synchronously supplementing or replacing liquid.
Furthermore, a plurality of independently arranged liquid medicine pipes are arranged in each first liquid medicine groove and each second liquid medicine groove, and the liquid medicine pipes are respectively communicated with an external liquid medicine source;
the liquid medicine cleaning unit is provided with two first liquid medicine grooves which are all arranged independently;
the chemical liquid rinsing unit is provided with a second liquid medicine groove;
every pure water groove, a liquid medicine groove with No. two liquid medicine grooves all are equipped with the water storage pipe, the water storage pipe all communicates with same peripheral hardware retaining source.
Further, a heater and a temperature sensor are arranged on the water storage pipe, and the temperature value of the heater connected with the pure water tank is smaller than that of the heater connected with the first liquid medicine tank or the second liquid medicine tank;
the temperature values of the heaters in the pure water tanks are the same;
the temperature values of the heaters in the first liquid medicine groove and the second liquid medicine groove are the same;
and ultrasonic vibration is arranged in each of the pure water tank, the first liquid medicine tank and the second liquid medicine tank.
A silicon chip cleaning liquid replacement and replenishment process adopts the cleaning mechanism, and comprises the following specific steps:
s1: after a set number of silicon wafers are cleaned, synchronously replenishing a first liquid medicine to the liquid medicine cleaning unit and replenishing a second liquid medicine to the chemical liquid rinsing unit according to a preset proportion;
s2: circulating the step S1 until the total number of the cleaned silicon wafers reaches a first number or the total number of the cleaned silicon wafers is integral multiple of the first number, and respectively replacing the first mixed liquid formed by the first liquid medicine and the water in the liquid medicine cleaning unit and the second mixed liquid formed by the second liquid medicine and the water in the chemical liquid rinsing unit;
in S1, the preset ratio of the first chemical solution replenishment amount is different from the preset ratio of the second chemical solution replenishment amount.
Further, in the S1, the set number of the silicon wafers is 2.5 to 4.5 ten thousand; wherein the set number of the silicon wafers is 3 ten thousand.
Further, the first liquid medicine supplementing amount is 1/2 of the preparation volume ratio of the first liquid medicine in the first mixed liquid; the first liquid medicine comprises a strong alkali solution and an active agent, wherein the volume ratio of the strong alkali solution to the active agent is 2: 1.
further, the volume ratio of the first liquid medicine to the water in the first mixed solution is (0.8-1.2%): 1; the strong base is potassium hydroxide or sodium hydroxide.
Further, the second liquid medicine supplementing amount is 1/4 of the preparation volume ratio of the second liquid medicine in the second mixed liquid; the second liquid medicine is hydrogen peroxide; the second mixed solution also comprises potassium hydroxide, and the volume ratio of the potassium hydroxide to the hydrogen peroxide to the water in the second mixed solution is as follows: 1: 4: 80.
further, the method further comprises S3, wherein S3 comprises: circulating the S1 and the S2 until the total number of the cleaned silicon wafers reaches a second number, and respectively replacing the pure water or the first mixed solution or the second mixed solution in the pre-cleaning unit, the liquid medicine cleaning unit, the primary rinsing unit, the chemical liquid rinsing unit, the secondary rinsing unit and the full pulling unit; the first number is 15-21 ten thousand pieces; the second number is 60-84 ten thousand pieces;
in the processes of S1, S2 and S3, the temperature of the solution in the pre-cleaning unit, the primary rinsing unit, the secondary rinsing unit and the full pulling unit is 40-50 ℃; the solution temperature in the liquid medicine cleaning unit and the chemical liquid rinsing unit is 50-60 ℃.
Further, after the execution of the S3, a new round of the silicon wafer counting is started and the execution of the S1, the S2 and the S3 is repeated.
Compared with the prior art, the cleaning mechanism and the liquid replacement and replenishment process thereof have the advantages of good cleaning effect and high cleaning quality, increase in the number of liquid replacement and cleaning of silicon wafers, reduction in liquid replacement times, improvement in product productivity and cost saving.
Drawings
FIG. 1 is a schematic structural view of a cleaning mechanism according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a cleaning process in accordance with one embodiment of the present invention.
10. Pre-cleaning unit 11, pure water tank 12, and pure water tank
20. Liquid medicine cleaning unit 21, first liquid medicine groove 22, first liquid medicine groove
30. Primary rinsing unit 31, pure water tank 32, and pure water tank
40. Chemical liquid rinsing unit 41, second liquid medicine tank 50 and secondary rinsing unit
51. Pure water tank 52, pure water tank 53, and pure water tank
54. Pure water tank 60, full-pulling unit 61, and pure water tank
70. Pure water source 80, liquid level sensor 90 and heater
100. Temperature sensor 110, first liquid medicine source 120 and second liquid medicine source
130. Third medicine liquid source 140 and ultrasonic device
Detailed Description
The invention is described in detail below with reference to the figures and specific embodiments.
A silicon wafer cleaning mechanism comprises a pre-cleaning unit 10, a liquid medicine cleaning unit 20, a primary rinsing unit 30, a chemical liquid rinsing unit 40, a secondary rinsing unit 50 and a full pulling unit 60 in sequence as shown in figures 1 and 2, wherein at least one pure water tank is arranged in each of the pre-cleaning unit 10, the primary rinsing unit 30, the secondary rinsing unit 50 and the full pulling unit 60; the liquid medicine cleaning unit 20 is provided with a plurality of first liquid medicine grooves; the chemical liquid rinsing unit 40 is at least provided with a second liquid medicine groove; the liquid medicine cleaning unit 20 and the chemical liquid rinsing unit 40 are used together or together with the pre-cleaning unit 10, the primary rinsing unit 30, the secondary rinsing unit 50 and the full pulling unit 60 to synchronously supplement or replace liquid.
Furthermore, a plurality of independently arranged liquid medicine pipes are arranged in each first liquid medicine groove and each second liquid medicine groove, and the liquid medicine pipes are respectively communicated with an external liquid medicine source; each pure water tank, the first liquid medicine tank and the second liquid medicine tank are provided with water storage pipes which are communicated with the same external water storage source, namely a pure water source 70. Specifically, the pre-cleaning unit 10 is provided with a pure water tank 11 and a pure water tank 12; the primary rinsing unit 30 is provided with a pure water tank 31 and a pure water tank 32; the secondary rinsing unit 50 is provided with a pure water tank 51, a pure water tank 52, a pure water tank 53, and a pure water tank 54; the full pulling unit 60 is provided with a pure water tank 61. The liquid medicine cleaning unit 20 is provided with two first liquid medicine tanks, namely a first liquid medicine tank 21 and a first liquid medicine tank 22, and the first liquid medicine tank 21 and the first liquid medicine tank 22 are both independently arranged. The chemical solution rinsing unit 40 includes a second chemical solution tank 41.
In the present embodiment, the solutions used in the pure water tanks in the pre-cleaning unit 10, the primary rinsing unit 30, the secondary rinsing unit 50, and the full pulling unit 60 are all pure water from a pure water source 70; the solution used by the first liquid medicine tank in the liquid medicine cleaning unit 20 is a first mixed solution prepared by a first liquid medicine from a first liquid medicine source 110 and pure water from a pure water source 70 according to a certain volume ratio; the solution used in the second liquid medicine tank in the chemical liquid rinsing unit 40 is a second mixed solution prepared by the second liquid medicine from the second liquid medicine source 120, the potassium hydroxide from the third liquid medicine source 30 and the pure water from the pure water source 70 according to a certain volume ratio.
Furthermore, one end of each of the liquid medicine tubes and the water storage tubes close to the first liquid medicine tank, the second liquid medicine tank or the pure water tank is provided with a one-way electromagnetic valve, so that the pure water or the liquid medicine is prevented from flowing back, and the pure water source 70, the first liquid medicine source 110, the second liquid medicine source 120 or the third liquid medicine source 130 are prevented from being polluted.
The heater 90 and the temperature sensor 100 are arranged on the water storage pipe and are mainly used for controlling the temperature of the pure water in the input groove to be constant and within a certain standard range, and the temperature value of the heater 90 connected with the pure water groove is smaller than that of the heater 90 connected with the first liquid medicine groove or the second liquid medicine groove. Wherein, the temperature values of the heaters 90 in the pure water tank are the same; the temperature value of the heater in the first liquid medicine groove is the same as that of the heater in the second liquid medicine groove. That is, the temperatures of the pure water entering the pre-cleaning unit 10, the primary rinsing unit 30, the secondary rinsing unit 50 and the full pulling unit 60 are the same, and are all 40-50 ℃, because the ultrasonic devices 140 are arranged in the pure water tanks for vibration, when the temperature in the solution is higher than 40 ℃, the cleaning effect is better. The temperature of the solvent pure water entering the chemical cleaning unit 20 and the chemical rinsing unit 40 is the same, and is 50-60 ℃, because when the temperature in the chemical is in this range, the chemical is mixed more uniformly and the cleaning effect is better.
Furthermore, each pure water tank, the first liquid medicine tank and the second liquid medicine tank are all provided with ultrasonic vibration, namely, the ultrasonic devices 140 are all arranged, in the cleaning process, the ultrasonic devices 140 work all the time, the cleaning of the silicon wafer is facilitated, the cleaning quality is good, the cleaning speed is high, particularly, the cleaning effect is better at a certain temperature, and particularly, when the temperature in the solution is higher than 40 ℃, the cleaning effect is better. In the present embodiment, the model of the ultrasonic device 140 is not particularly limited, and is selected according to actual needs.
Furthermore, liquid level sensor 80 is arranged in each of the pure water tank, the first liquid medicine tank and the second liquid medicine tank, and the liquid level sensor 80 is used for controlling the water content in the pure water tank, the first liquid medicine tank and the second liquid medicine tank, namely has an automatic water storage function, and ensures that the water content in the pure water tank, the first liquid medicine tank and the second liquid medicine tank is always within the standard requirement range.
Specifically, the pre-cleaning unit 10 sequentially comprises a pure water tank 11 and a pure water tank 12 filled with pure water, and is mainly used for softening, separating and dissolving pollutants on silicon wafers, in the cleaning process, the pure water tank 11 and the pure water tank 12 are respectively communicated with a pure water source 70 through water storage pipes, the water temperature of the water entering the pure water tank 11 and the pure water tank 12 after being heated by a heater 90 is 40-50 ℃, the water can be automatically stored in the tanks through a liquid level sensor 80, namely the water is stored in the tank body while being cleaned, and the total amount of the pure water in the pure water tank 11 and the pure water tank 12 is ensured to be within the range of standard requirements.
The liquid medicine cleaning unit 20 sequentially comprises a first liquid medicine tank 21 and a first liquid medicine tank 22 which are filled with a first mixed liquid, the volumes of the first mixed liquid in the first liquid medicine tank 21 and the first liquid medicine tank 22 are the same, the first mixed liquid is mainly used for removing oil stains on the surfaces of silicon wafers, and the temperature in the tanks is 50-60 ℃. Wherein, the first liquid medicine in the first mixed liquid is a strong alkali solution and an active agent, and the volume ratio of the strong alkali solution to the active agent is 2: 1, wherein the strong base is any one of potassium hydroxide or sodium hydroxide. The volume ratio of the first liquid medicine to the water in the first mixed solution is (0.8-1.2%): 1, inputting a first chemical liquid and water from a first chemical liquid source 110 and a spring water source 70 respectively to remove oil stains on the surface of the silicon wafer and then moving the silicon wafer into a primary rinsing unit 30. In the first liquid medicine tank 21 and the first liquid medicine tank 22, the volume content of pure water in the first mixed liquid is constant, and a signal is fed back through the liquid level sensor 80 to enable the pure water source 70 to automatically store water in the first liquid medicine tank 21 and the first liquid medicine tank 22, so that the water content in the first liquid medicine tank 21 and the first liquid medicine tank 22 is kept within a certain height range. During liquid supplementing, after a certain number of silicon wafers are cleaned each time, only the first liquid medicine provided by the first liquid medicine source 110 formed by a strong alkali solution and an active agent according to a certain volume ratio needs to be synchronously supplemented into the first liquid medicine tank 21 and the first liquid medicine tank 22 according to a set proportion, and then the liquid supplementing action of the first liquid medicine can be completed. When the solution is replaced, namely when the total amount of the cleaned silicon wafers reaches a certain value, the first mixed liquid in the first liquid medicine tank 21 and the first liquid medicine tank 22 is completely discharged, then the first liquid medicine and the water are injected into the first liquid medicine tank 21 and the first liquid medicine tank 22 again from the first liquid medicine source 110 and the pure water source 70 according to a set volume ratio, and the first liquid medicine and the water form the first mixed liquid according to a certain volume ratio.
The primary rinsing unit 30 includes a pure water tank 31 and a pure water tank 32 containing pure water in sequence, and is mainly used for rinsing the first chemical solution, i.e., the residual strong alkali solution and the activator, remaining on the surface of the silicon wafer. The pure water tanks 31 and 32 can automatically store water in the same manner as the pure water tanks 11 and 12.
The second liquid medicine tank 41 in the chemical liquid rinsing unit 40 is mainly used for decomposing and removing organic matters on the silicon wafer. The second mixed solution in the second chemical solution tank 41 is prepared by the second chemical solution from the second chemical solution source 120, the potassium hydroxide from the third chemical solution source 130 and the water from the pure water source 70 at a predetermined volume ratio, and the temperature of the pure water entering the tank is set to 50 to 60 ℃ by the heater 90 and the temperature sensor 100. Wherein, the second liquid medicine is hydrogen peroxide, and correspondingly, the volume ratio of the potassium hydroxide to the hydrogen peroxide to the water is as follows: 1: 4: 80. in this embodiment, consistent with the chemical cleaning unit, during liquid replenishment, after cleaning a certain number of silicon wafers each time, only the second chemical hydrogen peroxide solution needs to be replenished into the second chemical tank 41 according to a set proportion, because hydrogen peroxide solution is easy to volatilize, in order to ensure consistency of the ratio of each component in the second mixed solution, hydrogen peroxide solution needs to be replenished into the second chemical tank 41 periodically, and the liquid replenishment operation can be completed. When the solution is replaced, that is, when the total amount of the cleaned silicon wafers reaches a certain value, the second mixed solution in the second liquid medicine tank 41 is completely discharged, and then the second mixed solution consisting of potassium hydroxide, hydrogen peroxide and water is injected into the second liquid medicine tank 41 according to a set volume ratio.
The secondary rinsing unit 50 comprises a pure water tank 51 filled with pure water, a pure water tank 52, a pure water tank 53 and a pure water tank 54 in sequence, and is mainly used for removing chemical liquid and foam on the surface of the silicon wafer, and the pure water tank 51, the pure water tank 52, the pure water tank 53 and the pure water tank 54 are structurally arranged like the pure water tank 11 and the pure water tank 12, and can automatically store water through a water storage pipe by a pure water source 70.
The full-pulling unit comprises a pure water tank 61 filled with pure water, and is mainly used for uniformly distributing water on the surface of the silicon wafer and preparing for subsequent drying. The pure water tank 61 in the full pull-up unit is constructed as the pure water tank 11 and the pure water tank 12, and automatic water storage can be performed by the pure water source 70 through the water storage pipe.
Aiming at the liquid replacement and supplement process in the middle cleaning mechanism, the method specifically comprises the following steps:
s1: after each set number of silicon wafers are cleaned, a first liquid medicine is synchronously supplemented into the liquid medicine cleaning unit 20 and a second liquid medicine is synchronously supplemented into the chemical liquid rinsing unit 40 according to a preset proportion, the preset proportion of the supplement amount of the first liquid medicine is different from the preset proportion of the supplement amount of the second liquid medicine, and the step S1 runs through the whole cleaning process.
Specifically, the set number of the silicon wafers to be cleaned is 2.5 to 3.5 ten thousand, preferably 3 ten thousand, and after each 3 ten thousand of silicon wafers are cleaned, the first chemical liquid is replenished in the first chemical liquid tank 21 and the first chemical liquid tank 22 according to a certain volume ratio, that is, the first chemical liquid is replenished by strong alkali and an active agent according to a volume ratio of 2: 1, wherein the supplement amount of the first liquid medicine is 1/2 of the volume ratio of the first liquid medicine in the first mixed liquid; and supplementing a second liquid medicine, namely supplementing hydrogen peroxide, into the second liquid medicine tank 41 according to a certain proportion, wherein the supplementing amount of the second liquid medicine is 1/4 of the volume ratio of the second liquid medicine in the second mixed liquid.
At this time, the pure water in the pure water tank 11 and the pure water tank 12 in the pre-cleaning unit 10, the first chemical liquid tank 21 and the first chemical liquid tank 22 in the chemical liquid cleaning unit 20, the pure water tank 31 and the pure water tank 32 in the primary rinsing unit 30, the second chemical liquid tank 41 in the chemical liquid rinsing unit 40, the pure water tank 51, the pure water tank 52, the pure water tank 53 and the pure water tank 54 in the secondary rinsing unit 50, and the pure water tank 61 in the full-lift unit 60 are continuously used, and the water level in each tank is controlled by the level controller 80, and is automatically stored from the pure water source 70 of the water storage source through the water storage pipe, so that the water in each tank can be kept within the standard height range all the time.
S2: and (5) repeating the steps S1 and S2 until the total number of the cleaned silicon wafers reaches the first number or the total number of the cleaned silicon wafers is integral multiple of the first number, respectively replacing the first mixed liquid in the first liquid medicine tank in the liquid medicine cleaning unit 20 and the second mixed liquid in the second liquid medicine tank in the chemical liquid rinsing unit 40.
Specifically, in this embodiment, the step S1 is repeated for 6 cycles until the total number of cleaned silicon wafers reaches 15-21 ten thousand wafers, or the total number of cleaned silicon wafers is an integral multiple of 15-21 ten thousand wafers, and the first mixed liquid in the chemical liquid cleaning unit 20 and the second mixed liquid in the chemical liquid rinsing unit 40 are replaced again. Firstly, completely discharging the first mixed liquid in the first liquid medicine tank 21 and the first liquid medicine tank 22 in the liquid medicine cleaning unit 20, and then refilling the first mixed liquid with the first liquid medicine and the water according to the volume ratio of (0.8-1.2%): 1 to form the first mixed solution. Correspondingly, the second mixed liquid in the chemical liquid rinsing unit 40 is completely discharged, and then potassium hydroxide, hydrogen peroxide and water are re-injected in a volume ratio of 1: 4: 80 to form a second mixed solution.
At this time, pure water in the pure water tanks 11 and 12 in the pre-cleaning unit 10, the pure water tanks 31 and 32 in the primary rinsing unit 30, the pure water tank 51, the pure water tank 52, the pure water tanks 53 and 54 in the secondary rinsing unit 50, and the pure water tank 61 in the full-up pulling unit 60 are continuously used, but water in the respective tanks is automatically stored, that is, water in the respective tanks is always kept within a standard height range.
S3: and repeating the steps S1 and S2 until the total number of the cleaned silicon wafers reaches a second number, and replacing the pure water or the first mixed solution or the second mixed solution in the pre-cleaning unit 10, the liquid medicine cleaning unit 20, the primary rinsing unit 30, the chemical liquid rinsing unit 40, the secondary rinsing unit 50 and the full pulling unit 60 respectively, wherein the second number is integral multiple of the first number.
Specifically, the steps S1 and S2 are repeated, and in this embodiment, the process is repeated 3 times based on the step S2 until the total number of silicon wafers to be cleaned reaches 60 to 84 ten thousand wafers, i.e., the first mixture in the chemical cleaning unit 20 and the second mixture in the chemical rinsing unit 40 are replaced again. Firstly, completely discharging the first mixed liquid in the first liquid medicine tank 21 and the first liquid medicine tank 22 in the liquid medicine cleaning unit 20, and then refilling the first mixed liquid with the first liquid medicine and the water according to the volume ratio of (0.8-1.2%): 1 to form the first mixed solution. Correspondingly, the second mixed liquid in the chemical liquid rinsing unit 40 is completely discharged, and then potassium hydroxide, hydrogen peroxide and water are re-injected in a volume ratio of 1: 4: 80 to form a second mixed solution.
Pure water in the pure water tanks 11 and 12 in the pre-cleaning unit 10, the pure water tanks 31 and 32 in the primary rinsing unit 30, the pure water tanks 51, 52, 53 and 54 in the secondary rinsing unit 50, and the pure water tank 61 in the full pull-up unit 60 is all discharged at the same time, pure water from the pure water source 70 is newly discharged, and water in each tank is brought within a standard height range.
S4: after the step S3 is completed, a new round of silicon wafer counting is started, and the steps S1, S2 and S3 are repeated, and the replacement of the replenishment solution is repeated.
The first embodiment is as follows:
s1, after 3 ten thousand silicon wafers are cleaned, a first liquid medicine consisting of a strong alkali solution and activated carbon is supplemented into a first liquid medicine tank 21 and a first liquid medicine tank 22 in a liquid medicine cleaning unit 20, wherein the volume of the first liquid medicine in the first liquid medicine is 2L, the rest is water, correspondingly, the volume of the first liquid medicine supplemented this time is 1L, hydrogen peroxide is synchronously supplemented into a second liquid medicine tank 41 in a chemical liquid rinsing unit 40, wherein the volume of potassium hydroxide in the second liquid medicine is 1L, the volume of hydrogen peroxide is 4L, the rest is water, correspondingly, the volume of the hydrogen peroxide supplemented this time is 1L, and at the moment, the pure water tanks 11 and 12 in the pre-cleaning unit 10, the pure water tanks 31 and 32 in the primary rinsing unit 30, the pure water tanks 51, 52, 53 and 54 in the secondary rinsing unit 50, and the pure water tank 61 in the full rinsing unit 60 continuously and automatically store water for recycling.
On the basis of the above steps, step S1 is repeated, that is, when the total number of silicon wafer cleaning is 6 ten thousand, 9 ten thousand, 12 ten thousand and 5 ten thousand, the first chemical liquid with a volume of 1L is replenished in the first chemical liquid tank 21 and the first chemical liquid tank 22 of the chemical liquid cleaning unit 20, and the second chemical liquid tank 41 of the chemical liquid rinsing unit 40 is replenished with hydrogen peroxide with a volume of 1L, at this time, the pure water in the pre-cleaning unit 10, the primary rinsing unit 30, the secondary rinsing unit 50 and the full pulling unit 60 is continuously and automatically stored for recycling.
S2, repeating step S1, namely after the total number of the cleaned silicon wafers reaches 18 thousands, replacing the first mixed liquid in the first medicine liquid tank 21 and the first medicine liquid tank 22 in the medicine liquid cleaning unit 20 again, namely after all the first mixed liquid is completely discharged, injecting the first medicine liquid of 2L and the first mixed liquid consisting of water into the first medicine liquid tank 21 and the first medicine liquid tank 22 again, wherein the volume ratio of the strong base solution and the active agent in the first medicine liquid is 2: 1, synchronously replacing the second mixed liquid in the second medicine liquid tank 41 in the chemical liquid rinsing unit 40 again, namely after all the second mixed liquid is completely discharged, injecting 1L of potassium hydroxide and 4L of hydrogen peroxide into the second medicine liquid tank 41 again, and the rest being the second mixed liquid consisting of water into the second medicine liquid tank 41 again, at this time, the pure water tanks 11 and 12 in the pre-cleaning unit 10, the pure water tanks 31 and 32 in the primary rinsing unit 30, the pure water tanks 51, 52, 53 and 60 in the pure water tank 50, and the water tank 60 in the automatic pulling unit are fully used.
Based on the above steps, step S1 is repeated until the total number of cleaned silicon wafers is 36 ten thousand and 48 ten thousand respectively, the first mixed solution is replaced again in the first chemical solution tank 21 and the first chemical solution tank 22 in the chemical solution cleaning unit 20, that is, after all the first mixed solution is completely discharged, the first mixed solution of 2L is refilled into the first chemical solution tank 21 and the first chemical solution tank 22, and the rest is the first mixed solution of water, wherein the volume ratio of the strong base solution and the active agent in the first chemical solution is 2: 1, the second mixed solution is replaced again in the second chemical solution tank 41 in the chemical solution rinsing unit 40, that is, after all the second mixed solution is completely discharged, the potassium hydroxide of 1L, the hydrogen peroxide of 4L, and the rest is the second mixed solution of water is refilled into the second chemical solution tank 41, and at this time, the pure water tanks 11 and 12 in the primary rinsing unit 10, the pure water tanks 31 and 32 in the primary rinsing unit 30, the pure water tanks 51 and 52 in the secondary rinsing unit 50, and the water storage tank 60 are continuously used, and the automatic pulling-up water tank is full.
S3, continuing to fully step S1, when the total number of the cleaned silicon wafers is 72 ten thousand, replacing the first mixed liquid in the first medicine liquid tank 21 and the first medicine liquid tank 22 in the medicine liquid cleaning unit 20 again, namely, completely discharging all the first mixed liquid, then injecting the first mixed liquid of 2L and the rest of the first mixed liquid consisting of water into the first medicine liquid tank 21 and the first medicine liquid tank 22 again, wherein the volume ratio of the strong base solution and the active agent in the first mixed liquid is 2: 1, synchronously replacing the second mixed liquid in the second medicine liquid tank 41 in the chemical liquid rinsing unit 40 again, namely, completely discharging all the second mixed liquid, then injecting 1L of potassium hydroxide and 4L of hydrogen peroxide into the second medicine liquid tank 41 again, and remaining the second mixed liquid consisting of water again, and simultaneously discharging all the pure water tanks 11 and 12 in the pre-cleaning unit 30, 31 and 32 in the primary rinsing unit 30, 51, 52 and 53 and 60 in the pure water tank 60, and the pure water tank 61 and the pure water tank 60 in the pulling-up unit again.
S4: and starting a new round of silicon wafer counting, repeatedly executing the step S1, the step S2 and the step S3, and repeatedly and circularly replacing the replacement liquid.
Compared with the prior art, the cleaning mechanism and the liquid replacement and replenishment process thereof have the advantages of good cleaning effect and high cleaning quality, increase in the number of liquid replacement and cleaning of silicon wafers, reduction in liquid replacement times, improvement in product productivity and cost saving.
The embodiments of the present invention have been described in detail, and the description is only for the preferred embodiments of the present invention and should not be construed as limiting the scope of the present invention. All equivalent changes and modifications made within the scope of the present invention shall fall within the scope of the present invention.
Claims (10)
1. A silicon wafer cleaning mechanism is characterized by sequentially comprising a pre-cleaning unit, a liquid medicine cleaning unit, a primary rinsing unit, a chemical liquid rinsing unit, a secondary rinsing unit and a full pulling unit, wherein at least one pure water tank is arranged in each of the pre-cleaning unit, the primary rinsing unit, the secondary rinsing unit and the full pulling unit;
the liquid medicine cleaning unit is provided with a plurality of first liquid medicine grooves;
the chemical liquid rinsing unit is at least provided with a second liquid medicine groove;
the liquid medicine cleaning unit and the chemical liquid rinsing unit are used together or together with the pre-cleaning unit, the primary rinsing unit, the secondary rinsing unit and the full pulling unit for synchronously supplementing or replacing liquid.
2. The silicon wafer cleaning mechanism according to claim 1, wherein each of the first chemical solution tank and the second chemical solution tank is provided with a plurality of independently arranged chemical solution pipes, and the chemical solution pipes are respectively communicated with an external chemical solution source;
the liquid medicine cleaning unit is provided with two first liquid medicine grooves which are all arranged independently;
the chemical liquid rinsing unit is provided with a second liquid medicine groove;
every pure water groove, a liquid medicine groove with No. two liquid medicine grooves all are equipped with the water storage pipe, the water storage pipe all communicates with same peripheral hardware retaining source.
3. The silicon wafer cleaning mechanism according to claim 1 or 2, wherein a heater and a temperature sensor are arranged on the water storage pipe, and the temperature value of the heater connected with the pure water tank is lower than the temperature value of the heater connected with the first chemical solution tank or the second chemical solution tank;
the temperature values of the heaters in the pure water tanks are the same;
the temperature values of the heaters in the first liquid medicine groove and the second liquid medicine groove are the same;
and ultrasonic vibration is arranged in each of the pure water tank, the first liquid medicine tank and the second liquid medicine tank.
4. A silicon wafer cleaning, liquid replacement and replenishment process is characterized in that the cleaning mechanism according to any one of claims 1 to 3 is adopted, and the specific steps comprise:
s1: after a set number of silicon wafers are cleaned, synchronously replenishing a first liquid medicine to the liquid medicine cleaning unit and replenishing a second liquid medicine to the chemical liquid rinsing unit according to a preset proportion;
s2: circulating the step S1 until the total number of the cleaned silicon wafers reaches a first number or the total number of the cleaned silicon wafers is integral multiple of the first number, and respectively replacing the first mixed liquid formed by the first liquid medicine and the water in the liquid medicine cleaning unit and the second mixed liquid formed by the second liquid medicine and the water in the chemical liquid rinsing unit;
in S1, the preset ratio of the first chemical solution replenishment amount is different from the preset ratio of the second chemical solution replenishment amount.
5. The process of claim 4, wherein in said S1, said set number of said silicon wafers is 2.5-4.5 ten thousand; wherein the set number of the silicon wafers is 3 ten thousand.
6. The silicon wafer cleaning liquid replacement and replenishment process according to claim 4 or 5, wherein the replenishment amount of the first chemical liquid is 1/2 of the preparation volume ratio of the first chemical liquid in the first mixed liquid; the first liquid medicine comprises a strong alkali solution and an active agent, wherein the volume ratio of the strong alkali solution to the active agent is 2: 1.
7. the silicon wafer cleaning, liquid replacing and replenishing process as claimed in claim 6, wherein the volume ratio of the first liquid medicine to the water in the first mixed liquid is (0.8-1.2%): 1; the strong base is potassium hydroxide or sodium hydroxide.
8. The silicon wafer cleaning liquid replacement and replenishment process according to claim 4 or 5, wherein the replenishment amount of the second chemical liquid is 1/4 of the preparation volume ratio of the second chemical liquid in the second mixed liquid; the second liquid medicine is hydrogen peroxide;
the second mixed solution also comprises potassium hydroxide, and the volume ratio of the potassium hydroxide to the hydrogen peroxide to the water in the second mixed solution is as follows: 1: 4: 80.
9. the silicon wafer cleaning and replacement liquid process as set forth in any one of claims 4 to 5 and 7 to 8, further comprising S3, wherein the S3 comprises:
circulating the S1 and the S2 until the total number of the cleaned silicon wafers reaches a second number, and respectively replacing the pure water or the first mixed solution or the second mixed solution in the pre-cleaning unit, the liquid medicine cleaning unit, the primary rinsing unit, the chemical liquid rinsing unit, the secondary rinsing unit and the full pulling unit;
the first number is 15-21 ten thousand pieces; the second number is 60-84 ten thousand pieces;
in the processes of S1, S2 and S3, the temperature of the solution in the pre-cleaning unit, the primary rinsing unit, the secondary rinsing unit and the full pulling unit is 40-50 ℃;
the solution temperature in the liquid medicine cleaning unit and the chemical liquid rinsing unit is 50-60 ℃.
10. The process of claim 9, wherein after the step of performing the step of S3, a new round of the wafer counting is started and the steps of S1, S2 and S3 are repeated.
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| CN202010321321.7A CN111477571A (en) | 2020-04-22 | 2020-04-22 | Silicon wafer cleaning mechanism and liquid replacement and supplement process thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115254767A (en) * | 2022-07-19 | 2022-11-01 | 三一集团有限公司 | Silicon wafer cleaning method, device and system |
| WO2023237131A1 (en) * | 2022-06-09 | 2023-12-14 | Tcl Zhonghuan Renewable Energy Technology Co., Ltd. | Apparatuses for supplying cleaning liquid and silicon wafer cleaning machines including the same |
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2020
- 2020-04-22 CN CN202010321321.7A patent/CN111477571A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023237131A1 (en) * | 2022-06-09 | 2023-12-14 | Tcl Zhonghuan Renewable Energy Technology Co., Ltd. | Apparatuses for supplying cleaning liquid and silicon wafer cleaning machines including the same |
| CN115254767A (en) * | 2022-07-19 | 2022-11-01 | 三一集团有限公司 | Silicon wafer cleaning method, device and system |
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