CN111473955B - Method for testing heat dispersion performance of infrared semiconductor light-emitting element - Google Patents
Method for testing heat dispersion performance of infrared semiconductor light-emitting element Download PDFInfo
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Abstract
The invention discloses a method for testing the heat dispersion of an infrared semiconductor light-emitting element, which belongs to the field of semiconductor heat dispersion testing, and can measure the environmental temperature rise change of different distances nearby the semiconductor light-emitting element under the condition of not gathering heat through the arrangement of a plurality of support measuring columns which are distributed in a circle shape and have different heights and a multi-light spot cover, so that the test result of the heat dispersion of the semiconductor light-emitting element is more accurate, simultaneously a plurality of light spot balls on the multi-light spot cover are gradually lightened along with the heat continuously dispersed by the semiconductor light-emitting element, the running approximate track of the semiconductor light-emitting element when the heat generated by the semiconductor light-emitting element is dispersed outwards can be reflected by recording the lightening sequence of the plurality of light spot balls, thereby the mounting angle of the semiconductor light-emitting element can be adjusted according to the track with the best heat dispersion effect after the test, therefore, the semiconductor light-emitting element has better heat dissipation performance when in use.
Description
Technical Field
The invention relates to the field of semiconductor heat dissipation performance testing, in particular to a method for testing heat dissipation performance of an infrared semiconductor light-emitting element.
Background
The semiconductor photoelectric device is a novel semiconductor device which can link two physical quantities of light and electricity to convert the light and the electricity into each other. I.e., devices made using the photoelectric effect (or thermoelectric effect) of semiconductors. The photoelectric devices include mainly a photoconductive device which operates by utilizing a photosensitive characteristic of a semiconductor, a photovoltaic cell which operates by utilizing a photovoltaic effect of a semiconductor, a semiconductor light emitting device, and the like. Semiconductor optoelectronic devices such as light pipes, photovoltaic cells, photodiodes, phototransistors, etc.; semiconductor thermoelectric devices such as thermistors, thermoelectric generators, thermoelectric coolers, and the like.
The photosensitive property of a semiconductor material is that the resistivity of the semiconductor material is significantly reduced, or the conductivity is increased, when the semiconductor material is exposed to light of a certain wavelength. This phenomenon is also called the photoconductive characteristic of the semiconductor. Semiconductor devices fabricated using this characteristic are called photoconductive devices.
The conductivity of a semiconductor material is determined by the carrier concentration. The carriers are the electrons escaping from the semiconductor atoms and the vacancies left behind, holes. Electrons escape from atoms and must work against the confinement of the atoms, and illumination is one form of providing energy to the electron to enable it to escape. Thus, illumination can change the concentration of carriers, thereby changing the conductivity of the semiconductor. The photoconductive device mainly comprises a photoresistor, a photodiode and a phototriode.
In the prior art, a groove is generally arranged outside a mounting plate of a semiconductor light-emitting element, and a thermosensitive element is mounted in the groove to test the heat dissipation of the semiconductor light-emitting element, for example, the method and the device for testing the thermal resistance of a power semiconductor element radiator disclosed in chinese patent application No. 201110099548.2, but the arrangement of the groove in the test mode, especially, easily causes heat accumulation near the semiconductor light-emitting element, causes the temperature of the semiconductor light-emitting element to be higher, causes the heat dissipation efficiency of the semiconductor light-emitting element to be lower, and affects the test precision of the heat dissipation performance of the semiconductor light-emitting element.
Disclosure of Invention
1. Technical problem to be solved
In view of the problems in the prior art, an object of the present invention is to provide a method for testing heat dissipation performance of an infrared semiconductor light emitting device, which can measure temperature rise changes of environments at different distances near the semiconductor light emitting device without collecting heat through the arrangement of a plurality of support pins distributed in a circumferential shape and having different heights and a multi-spot cover, so as to make the test result of the heat dissipation performance of the semiconductor light emitting device more accurate, and simultaneously, under the action of the multi-spot cover, a plurality of spot balls on the multi-spot cover are gradually lighted up along with the heat continuously emitted from the semiconductor light emitting device, and by recording the sequence of lighting up the plurality of spot balls, the operation rough track of the semiconductor light emitting device when the heat generated by the semiconductor light emitting device is emitted outward can be reflected, so that after the test, the installation angle of the semiconductor light emitting device can be adjusted according to the track with the best heat dissipation effect, therefore, the semiconductor light-emitting element has better heat dissipation performance when in use.
2. Technical scheme
In order to solve the above problems, the present invention adopts the following technical solutions.
A method for testing heat dispersion performance of an infrared semiconductor light-emitting element comprises the following steps:
s1, firstly simulating the actual use environment of the semiconductor light-emitting element, and mounting the semiconductor light-emitting element on a mounting board in the simulated environment;
s2, arranging a plurality of supporting point measuring columns around the semiconductor light-emitting element in a circumferential manner, installing a lower thermosensitive element right below the semiconductor light-emitting element, and finally covering the outer sides of the semiconductor light-emitting element and the supporting point measuring columns with a multi-light-spot cover;
s3, starting the semiconductor light-emitting element to enable the semiconductor light-emitting element to normally emit light, and recording the temperature rise change conditions of the thermosensitive element and the plurality of branch point measuring columns within a certain time;
and S4, observing the multi-point cover, and comparing the temperature rise change conditions of the lower thermosensitive element and the plurality of branch point measuring columns to finish the heat dispersion test of the semiconductor light-emitting element after the multi-point cover is completely lightened.
Can be through a plurality of fulcrum survey post's that are the circumference form and distribute and highly different setting, with the difference in temperature change under the different distance condition of semiconductor light emitting component, contrast the difference in temperature change of semiconductor light emitting component self simultaneously, two-way test makes the test result to semiconductor light emitting component's heat dispersion more accurate, simultaneously under the effect of many light point covers, along with the heat that semiconductor light emitting component constantly distributed, a plurality of light point balls on the many light point covers are lighted gradually, through the order that a plurality of light point balls are lighted, the approximate orbit of operation when can reflecting the heat that semiconductor light emitting component produced outwards distributes, thereby after the test, can be according to the best orbit adjustment semiconductor light emitting component's of radiating effect installation angle, thereby make this semiconductor light emitting component when using, heat dispersion is better.
Furthermore, the certain time in S3 is the time when the multi-spot cover is completely lit in S4, and the tracks of the multiple spots lit on the multi-spot cover enable the method to test not only the heat dissipation performance of the semiconductor light emitting device, but also the optimal heat dissipation path of the semiconductor light emitting device, so that after the test, the installation angle of the semiconductor light emitting device can be adjusted according to the path to form the optimal heat dissipation effect, thereby enabling the use effect of the semiconductor light emitting device after the test to be better.
Further, in S3, the recording frequency of the temperature rise change is 20 to 25S, so that a plurality of data of temperature changes can be obtained, and a line graph can be drawn according to the data, so that the change of the heat dissipation performance of the semiconductor light emitting element under different service durations can be visually reflected, and the test accuracy of the heat dissipation performance of the semiconductor light emitting element is higher.
Further, in S4, when the multi-spot cover is lit by multiple spots, the sequence of the lit multiple spots on the multi-spot cover is recorded, so as to record the lighting track, and the lit track can reflect the approximate track of the operation when the heat generated by the semiconductor light emitting element is dissipated outwards, so that after the test, the installation angle of the semiconductor light emitting element can be adjusted according to the track with the best heat dissipation effect, and the heat dissipation performance of the semiconductor light emitting element is better when the semiconductor light emitting element is used.
Further, it is a plurality of the branch point survey post bonds in the mounting panel upper end, and is a plurality of the branch point survey post is highly different around semiconductor light emitting element, and the height of a plurality of branch point survey posts is the equidifferent degressive in proper order of circumference form to make a plurality of branch point survey posts, can test out, with the temperature difference situation under the different distance circumstances of semiconductor light emitting element, carry out the measurement of difference in temperature through the heat that the multiple spot distributes out around the semiconductor light emitting element, make the test result more accurate to semiconductor light emitting element's heat dispersion, reduce the single uncertainty of data.
Further, the fulcrum measuring column comprises a supporting column which is adhered with the mounting plate and an upper thermosensitive element which is arranged at the upper end of the supporting column.
Furthermore, the support is made of a heat insulation material, so that the support does not have heat conductivity, and the phenomenon that the temperature rise measured by the upper thermosensitive element in unit time is too fast due to heat conduction of the support is effectively avoided, the accuracy of measuring the temperature rise change of the upper thermosensitive element in the environment near the semiconductor light-emitting element is effectively ensured, the height of the support measuring column with the minimum height is 1-1.5 times of the height of the light-emitting element, the temperature change of the environment near the semiconductor light-emitting element is close to the semiconductor light-emitting element, the loss is small when heat is transferred in the air due to the fact that the support measuring column is close to the semiconductor light-emitting element, and therefore the data accuracy of the support measuring column is high, and the temperature rise change near the semiconductor light-emitting element is not easy to measure.
Furthermore, the multi-light-spot cover is of a net structure formed by mutually weaving longitudinal lines and transverse lines, and is hemispherical, so that the distance between each point on the multi-light-spot cover and the semiconductor light-emitting element is the same, and the multi-light-spot cover can determine the path with the best heat dissipation fastest effect of the semiconductor light-emitting element more accurately.
Furthermore, each node of the longitudinal and transverse lines on the multi-light-spot cover is fixedly connected with a light spot ball, the light spot ball comprises a hollow light emitting ball and fluorescent powder filled in the hollow light emitting ball, and the outer surface of the hollow light emitting ball is coated with a thermal light conversion layer.
Furthermore, the hollow light shooting ball is made of transparent glass materials, so that light emitted by the fluorescent powder inside the hollow light shooting ball can be seen through the hollow light shooting ball, the inner wall of the hollow light shooting ball is of a multi-section-shaped structure, the hollow light shooting ball can reflect the light emitted by the fluorescent powder, the effect that the observed light spot ball is lightened is better and obvious after the thermal change layer is transparent, the thermal change layer is made of a dark-color thermal change material, the temperature of the thermal change layer is increased after the thermal change layer is subjected to heat emitted by the semiconductor light emitting element, and the thermal change layer can be changed into transparent color when the temperature is increased to a critical point, so that the light emitted by the fluorescent powder inside the thermal change layer can be emitted to the outside through the hollow light shooting ball and the thermal change layer, and the effect that the light spot ball is lightened is further realized.
3. Advantageous effects
Compared with the prior art, the invention has the advantages that:
(1) this scheme can be through a plurality of branch point survey posts and the setting of many light spot covers that are the circumference form and distribute and highly different, can be under the condition of not gathering heat, measure the environmental temperature rise change of near different distances of semiconductor light emitting component, make the test result to semiconductor light emitting component's heat dispersion more accurate, along with the heat that semiconductor light emitting component constantly gives off, a plurality of light spot balls on many light spot covers are lighted gradually, through the order that a plurality of light spot balls are lighted, the approximate orbit of the operation when the heat that can reflect semiconductor light emitting component production outwards gives off, thereby after the test, can be according to the best orbit adjustment semiconductor light emitting component's of radiating effect installation angle, thereby make this semiconductor light emitting component when using, heat dispersion is better.
(2) The certain time in S3 is the time when the multi-spot cover is completely lit in S4, and the tracks of the multiple spots lit on the multi-spot cover enable the method to test not only the heat dissipation performance of the semiconductor light emitting element, but also the optimal heat dissipation path of the semiconductor light emitting element, so that after the test, the mounting angle of the semiconductor light emitting element can be adjusted according to the path to form the optimal heat dissipation effect, thereby enabling the use effect of the semiconductor light emitting element after the test to be better.
(3) In the step S3, the recording frequency of the temperature rise change is 20 to 25S, so that a plurality of data of temperature changes can be obtained, and a line graph can be drawn according to the data, so that the change condition of the heat dissipation performance of the semiconductor light emitting element under different service durations can be visually reflected, and the test accuracy of the heat dissipation performance of the semiconductor light emitting element is higher.
(4) When the multi-spot cover is multi-spot lighted in S4, the sequence of the multi-spot cover being lighted is recorded simultaneously, so as to record the lighting track, which can reflect the approximate running track of the semiconductor light emitting element when the heat generated by the semiconductor light emitting element is radiated outwards, so that after the test, the installation angle of the semiconductor light emitting element can be adjusted according to the track with the best heat radiation effect, thereby the heat radiation performance of the semiconductor light emitting element is better when the semiconductor light emitting element is used.
(5) A plurality of fulcrum survey posts bond in the mounting panel upper end, a plurality of fulcrum survey posts highly different around semiconductor light emitting component, and the height of a plurality of fulcrum survey posts is the equidifferent degressive in proper order of circumference form, thereby make a plurality of fulcrum survey posts, can test out, with the temperature difference change condition under the different distance circumstances of semiconductor light emitting component, carry out the measurement of difference in temperature through the heat that the multiple spot gave out around the semiconductor light emitting component, make the test result to semiconductor light emitting component's heat dispersion more accurate, reduce the single uncertainty of data.
(6) The fulcrum measuring post comprises a post which is adhered with the mounting plate and an upper thermosensitive element which is arranged at the upper end of the post.
(7) The support is made of heat insulation materials, so that the support does not have heat conductivity, the phenomenon that the temperature in unit time measured by the upper thermosensitive element is too high due to heat conduction of the support is effectively avoided, the accuracy of the measurement of the temperature rise change of the environment near the semiconductor light-emitting element by the upper thermosensitive element is effectively ensured, the height of the support point measuring column with the minimum height is 1-1.5 times of the height of the light-emitting element, the temperature change of the environment near the semiconductor light-emitting element is close to the temperature change of the environment near the semiconductor light-emitting element, the loss is small when heat is transmitted in the air due to the fact that the support point measuring column is close to the semiconductor light-emitting element, the data accuracy of the position is high, the support point measuring column is too high, and the temperature rise change near the semiconductor light-emitting element is not easy to measure.
(8) The multi-light-spot cover is of a net structure formed by mutually weaving longitudinal lines and transverse lines, and is hemispherical, so that the distance between each point on the multi-light-spot cover and the semiconductor light-emitting element is the same, and the determination of the path with the best heat dissipation effect of the multi-light-spot cover on the semiconductor light-emitting element is more accurate.
(9) Each node of the longitudinal and transverse lines on the multi-light-spot cover is fixedly connected with a light spot ball, the light spot ball comprises a hollow light emitting ball and fluorescent powder filled in the hollow light emitting ball, and the outer surface of the hollow light emitting ball is coated with a thermal light-changing layer.
(10) The hollow light shooting ball is made of transparent glass materials, so that light emitted by the fluorescent powder inside the hollow light shooting ball can be seen through the hollow light shooting ball, the inner wall of the hollow light shooting ball is of a multi-section-shaped structure, the hollow light shooting ball can reflect the light emitted by the fluorescent powder, the observed light spot ball is better and obvious in lighting effect after the thermal change layer is transparent, the thermal change layer is made of a dark-color thermal change material, the temperature of the thermal change layer is increased after the thermal change layer is subjected to heat emitted by the semiconductor light emitting element, and the thermal change layer can be changed into transparent color when the temperature is increased to a critical point, so that the light emitted by the fluorescent powder inside the thermal change layer can be emitted to the outside through the hollow light shooting ball and the thermal change layer, and the lighting effect of the light spot ball is achieved.
Drawings
FIG. 1 is a principal flow diagram of the present invention;
FIG. 2 is a schematic structural diagram of a front surface of a semiconductor light emitting device mounted in a simulated environment during a heat dissipation performance test according to the present invention;
FIG. 3 is a schematic view of a semiconductor light emitting device according to the present invention in a partially three-dimensional configuration when mounted in a simulated environment;
FIG. 4 is a schematic structural view of the front side of the fulcrum pin of the present invention;
FIG. 5 is a schematic structural view of a multi-spot mask portion of the present invention;
fig. 6 is a schematic structural diagram of the front surface of the light spot ball of the present invention.
The reference numbers in the figures illustrate:
1 mounting plate, 2 semiconductor light-emitting elements, 3 multi-spot covers, 4-point measuring columns, 41 pillars, 42 upper heat-sensitive elements, 5 spot balls, 51 hollow light shooting balls, 52 heat-variable optical layers, 53 fluorescent powder and 6 lower heat-sensitive elements.
Detailed Description
The drawings in the embodiments of the invention will be combined; the technical scheme in the embodiment of the invention is clearly and completely described; obviously; the described embodiments are only some of the embodiments of the invention; but not all embodiments, are based on the embodiments of the invention; all other embodiments obtained by a person skilled in the art without making any inventive step; all fall within the scope of protection of the present invention.
In the description of the present invention, it should be noted that the terms "upper", "lower", "inner", "outer", "top/bottom", and the like indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of description and simplification of description, but do not indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and thus should not be construed as limiting the present invention. Furthermore, the terms "first" and "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "disposed," "sleeved/connected," "connected," and the like are to be construed broadly, e.g., "connected," which may be fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
Example 1:
referring to fig. 1-2, a method for testing heat dissipation performance of an infrared semiconductor light emitting device includes the following steps:
s1, simulating an actual usage environment of the semiconductor light emitting element 2, and mounting the semiconductor light emitting element 2 on the mounting board 1 in the simulated environment;
s2, arranging a plurality of support measuring columns 4 around the semiconductor light-emitting element 2 in a circle, installing a lower heat-sensitive element 6 right below the semiconductor light-emitting element 2, and finally covering the outer sides of the semiconductor light-emitting element 2 and the support measuring columns 4 with a multi-light-spot cover 3;
s3, starting the semiconductor light-emitting element 2 to normally emit light, and recording the temperature rise changes of the thermosensitive element 6 and the plurality of branch point measuring columns 4 within a certain time;
and S4, observing the multi-point lighting condition of the multi-point light-emitting cover 3, and comparing the temperature rise change conditions of the lower thermosensitive element 6 and the plurality of branch point measuring columns 4 after the multi-point on the multi-point light-emitting cover 3 is completely lighted, thereby completing the heat dispersion test of the semiconductor light-emitting element 2.
The certain time in S3 is the time when the multi-spot cover 3 in S4 is completely lighted, and the track of the multi-spot cover 3 where multiple spots are lighted enables the method to test not only the heat dissipation performance of the semiconductor light emitting element 2, but also the optimal heat dissipation path of the semiconductor light emitting element 2, so that after the test, the installation angle of the semiconductor light emitting element 2 can be adjusted according to the path to form the optimal heat dissipation effect, so that the use effect of the semiconductor light emitting element 2 after the test is better, the recording frequency of the temperature rise change in S3 is 20-25S, so that data of multiple temperature changes can be obtained, a broken line graph can be drawn according to the data, so that the change situation of the heat dissipation performance of the semiconductor light emitting element 2 under different use durations can be intuitively reflected, and the test accuracy of the heat dissipation performance of the semiconductor light emitting element 2 is higher, in S4, when the multi-spot cover 3 is lit at multiple spots, the sequence of lighting the multiple spots on the multi-spot cover 3 is recorded, so as to record the lighting track, which can reflect the approximate running track of the semiconductor light emitting element 2 when the heat generated by the semiconductor light emitting element 2 is dissipated outwards, so that after the test, the installation angle of the semiconductor light emitting element 2 can be adjusted according to the track with the best heat dissipation effect, thereby the heat dissipation performance of the semiconductor light emitting element 2 is better when in use.
Referring to fig. 3, a plurality of branch point measuring pillars 4 are adhered to the upper end of the mounting plate 1, the heights of the branch point measuring pillars 4 around the semiconductor light emitting element 2 are different, the heights of the branch point measuring pillars 4 are sequentially decreased in a circular equal difference mode, the branch point measuring pillars 4 are not in a closed or semi-closed state, and the heat emitted from the semiconductor light emitting element 2 is not gathered, so that the branch point measuring pillars 4 can measure the temperature difference change condition under the condition of different distances from the semiconductor light emitting element 2, the temperature difference of the heat emitted from the periphery of the semiconductor light emitting element 2 is measured by multiple points, the test result of the heat dissipation performance of the semiconductor light emitting element 2 is more accurate, and the single uncertainty of data is reduced.
Referring to fig. 4, the fulcrum pin 4 includes a support 41 adhered to the mounting plate 1 and an upper heat sensitive element 42 mounted on an upper end of the support 41, the support 41 is made of a heat insulating material, so that the support 41 itself has no heat conductivity, thereby effectively avoiding the phenomenon that the temperature measured by the upper thermosensitive element 42 rises too fast in unit time due to the heat conduction of the support 41, thereby effectively ensuring the accuracy of the upper thermosensitive element 42 in measuring the environmental temperature rise change near the semiconductor light-emitting element 2, and the height of the branch point measuring column 4 with the minimum height is 1-1.5 times of the height of the light-emitting element, and the temperature change of the environment near the semiconductor light-emitting element 2, because the part is close to the semiconductor light-emitting element 2, the loss is small when the heat is transmitted in the air, the accuracy of the part data is high, therefore, the branch point measuring column 4 is too high, and the temperature rise change close to the semiconductor light emitting element 2 is not easy to measure.
Referring to fig. 5, the multi-spot cover 3 is a mesh structure formed by weaving longitudinal lines and transverse lines, so that the multi-spot cover 3 does not easily affect the dissipation of the heat outside the semiconductor light emitting element 2, thereby effectively reducing the accumulation of the heat outside the semiconductor light emitting element 2, and effectively avoiding the influence of the heat accumulation on the accuracy of the measurement of the heat dissipation performance of the semiconductor light emitting element 2, and the multi-spot cover 3 is hemispherical, so that the distance between each point on the multi-spot cover 3 and the semiconductor light emitting element 2 is the same, thereby more accurately determining the path of the multi-spot cover 3 with the best fastest heat dissipation effect of the semiconductor light emitting element 2, and each node of the longitudinal lines on the multi-spot cover 3 is fixedly connected with a spot ball 5;
referring to fig. 6, the light spot ball 5 includes a hollow light ball 51 and phosphor 53 filled in the hollow light ball 51, the outer surface of the hollow light ball 51 is coated with a thermal light conversion layer 52, the hollow light ball 51 is made of transparent glass, so that the light emitted from the inner phosphor 53 can be seen therethrough, and the inner wall of the hollow light-emitting sphere 51 has a multi-section structure, so that it can reflect the light emitted from the phosphor 53, so that the observed effect of lighting the light spot ball 5 is more obvious after the thermal light change layer 52 is transparent, the thermal light change layer 52 is made of dark-color thermal color change material, after the thermal light change layer is heated by the heat emitted by the semiconductor light-emitting element 2, when the temperature is heated to the critical point, it becomes transparent, so that the light emitted from the fluorescent powder 53 inside the hollow light-emitting ball 51 and the thermal light-changing layer 52 can be emitted to the outside through the hollow light-emitting ball 51, and the effect of lighting the light-point ball 5 is achieved.
By arranging the plurality of support measuring columns 4 and the multi-spot cover 3 which are distributed in a circumferential shape and have different heights, the temperature difference change under the condition of different distances from the semiconductor light-emitting element 2 can be measured under the condition of not gathering heat, so that the test result of the heat dissipation performance of the semiconductor light-emitting element 2 is more accurate, meanwhile, under the action of the multi-spot cover 3, along with the heat continuously dissipated by the semiconductor light-emitting element 2, the plurality of light spot balls 5 on the multi-spot cover 3 are gradually lightened, the running approximate track of the heat generated by the semiconductor light-emitting element 2 when the heat is dissipated outwards can be reflected by recording the lightening sequence of the plurality of light spot balls 5, and therefore, after the test, the installation angle of the semiconductor light-emitting element 2 can be adjusted according to the track with the best heat dissipation effect, and therefore, when the semiconductor light-emitting element 2 is used, the heat dissipation performance is better.
The above; but are merely preferred embodiments of the invention; the scope of the invention is not limited thereto; any person skilled in the art is within the technical scope of the present disclosure; the technical scheme and the improved concept of the invention are equally replaced or changed; are intended to be covered by the scope of the present invention.
Claims (9)
1. A method for testing heat dispersion performance of an infrared semiconductor light-emitting element is characterized by comprising the following steps: the method comprises the following steps:
s1, firstly simulating the actual use environment of the semiconductor light-emitting element (2), and mounting the semiconductor light-emitting element (2) on the mounting board (1) in the simulated environment;
s2, arranging a plurality of supporting point measuring columns (4) around the semiconductor light-emitting element (2) in a circumferential manner, installing a lower thermosensitive element (6) right below the semiconductor light-emitting element (2), and finally covering the outer sides of the semiconductor light-emitting element (2) and the supporting point measuring columns (4) with a multi-light-spot cover (3);
s3, then starting the semiconductor light-emitting element (2) to enable the semiconductor light-emitting element to normally emit light, and recording the temperature rise change conditions of the thermosensitive element (6) and the plurality of branch point measuring columns (4) within a certain time;
s4, observing the multi-point cover (3) lighting condition, and comparing the temperature rise change conditions of the lower thermosensitive element (6) and the plurality of branch point measuring columns (4) after the multi-point cover (3) is completely lighted, so as to finish the heat dispersion test of the semiconductor light-emitting element (2);
in S4, when the multi-spot cover (3) is lit at multiple spots, the lighting tracks are recorded by recording the sequence of lighting the multiple spots on the multi-spot cover (3) at the same time.
2. The method for testing the heat dissipation performance of the infrared semiconductor light-emitting element according to claim 1, wherein: the predetermined time in S3 is the time when the multi-spot cover (3) is completely lit in S4.
3. The method for testing the heat dissipation performance of the infrared semiconductor light-emitting element according to claim 1, wherein: the recording frequency for the temperature rise change in S3 was 20 to 25S.
4. The method for testing the heat dissipation performance of the infrared semiconductor light-emitting element according to claim 1, wherein: the plurality of branch point measuring columns (4) are adhered to the upper end of the mounting plate (1), the heights of the branch point measuring columns (4) around the semiconductor light-emitting element (2) are different, and the heights of the plurality of branch point measuring columns (4) are sequentially equal in difference and gradually decreased in a circumferential mode.
5. The method for testing the heat dissipation performance of the infrared semiconductor light-emitting element according to claim 1, wherein: the fulcrum measuring column (4) comprises a supporting column (41) adhered with the mounting plate (1) and an upper thermosensitive element (42) mounted at the upper end of the supporting column (41).
6. The method for testing the heat dissipation performance of the infrared semiconductor light-emitting element as claimed in claim 5, wherein: the support column (41) is made of heat insulation materials, and the height of the support point measuring column (4) with the minimum height is 1-1.5 times of the height of the light-emitting element.
7. The method for testing the heat dissipation performance of the infrared semiconductor light-emitting element according to claim 1, wherein: the multi-light-spot cover (3) is of a net structure formed by mutually weaving longitudinal lines and transverse lines, and the multi-light-spot cover (3) is hemispherical.
8. The method for testing the heat dissipation performance of the infrared semiconductor light-emitting element as claimed in claim 7, wherein: each node of the longitudinal and transverse lines on the multi-light-spot cover (3) is fixedly connected with a light spot ball (5), each light spot ball (5) comprises a hollow light shooting ball (51) and fluorescent powder (53) filled in the hollow light shooting ball (51), and the outer surface of the hollow light shooting ball (51) is coated with a thermal light changing layer (52).
9. The method for testing the heat dissipation performance of the infrared semiconductor light-emitting element as claimed in claim 8, wherein: the hollow light shooting ball (51) is made of transparent glass, the inner wall of the hollow light shooting ball (51) is of a multi-section structure, and the thermal light changing layer (52) is made of a dark-color thermosensitive color changing material.
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