CN111463294A - Preparation method of alkali metal layer of thin-film solar cell and coating equipment - Google Patents
Preparation method of alkali metal layer of thin-film solar cell and coating equipment Download PDFInfo
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- CN111463294A CN111463294A CN201910048186.0A CN201910048186A CN111463294A CN 111463294 A CN111463294 A CN 111463294A CN 201910048186 A CN201910048186 A CN 201910048186A CN 111463294 A CN111463294 A CN 111463294A
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- 229910052783 alkali metal Inorganic materials 0.000 title claims abstract description 295
- 150000001340 alkali metals Chemical class 0.000 title claims abstract description 286
- 239000010409 thin film Substances 0.000 title claims abstract description 103
- 239000011248 coating agent Substances 0.000 title claims abstract description 88
- 238000000576 coating method Methods 0.000 title claims abstract description 88
- 238000002360 preparation method Methods 0.000 title claims abstract description 17
- 238000000151 deposition Methods 0.000 claims abstract description 194
- 230000008021 deposition Effects 0.000 claims abstract description 185
- 239000000758 substrate Substances 0.000 claims abstract description 108
- 238000010438 heat treatment Methods 0.000 claims abstract description 74
- 238000000034 method Methods 0.000 claims abstract description 52
- 238000010521 absorption reaction Methods 0.000 claims abstract description 19
- 150000001339 alkali metal compounds Chemical class 0.000 claims description 19
- 239000007787 solid Substances 0.000 claims description 15
- -1 alkali metal cations Chemical class 0.000 claims description 8
- 150000001450 anions Chemical class 0.000 claims description 5
- 239000002994 raw material Substances 0.000 claims description 3
- 238000010248 power generation Methods 0.000 abstract description 27
- 230000006911 nucleation Effects 0.000 abstract description 2
- 238000010899 nucleation Methods 0.000 abstract description 2
- 238000001883 metal evaporation Methods 0.000 description 100
- 238000001704 evaporation Methods 0.000 description 88
- 230000000052 comparative effect Effects 0.000 description 87
- 230000008020 evaporation Effects 0.000 description 87
- 229910052755 nonmetal Inorganic materials 0.000 description 42
- 239000013078 crystal Substances 0.000 description 28
- 239000011734 sodium Substances 0.000 description 24
- 239000010408 film Substances 0.000 description 22
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 20
- 239000010949 copper Substances 0.000 description 20
- 238000001465 metallisation Methods 0.000 description 18
- 238000012360 testing method Methods 0.000 description 16
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 11
- 229910052750 molybdenum Inorganic materials 0.000 description 11
- 239000011733 molybdenum Substances 0.000 description 11
- 239000005361 soda-lime glass Substances 0.000 description 11
- 238000002425 crystallisation Methods 0.000 description 10
- 230000008025 crystallization Effects 0.000 description 10
- 239000011521 glass Substances 0.000 description 10
- 239000000463 material Substances 0.000 description 8
- 229910052708 sodium Inorganic materials 0.000 description 8
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 7
- 230000031700 light absorption Effects 0.000 description 7
- 238000013100 final test Methods 0.000 description 6
- 238000007747 plating Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 238000010549 co-Evaporation Methods 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- 238000001816 cooling Methods 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 239000006096 absorbing agent Substances 0.000 description 2
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 229910001415 sodium ion Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- RXPRRQLKFXBCSJ-GIVPXCGWSA-N vincamine Chemical compound C1=CC=C2C(CCN3CCC4)=C5[C@@H]3[C@]4(CC)C[C@](O)(C(=O)OC)N5C2=C1 RXPRRQLKFXBCSJ-GIVPXCGWSA-N 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 239000005083 Zinc sulfide Substances 0.000 description 1
- QXKUQUSBOISHGH-UHFFFAOYSA-N [Se].[S].[In].[Cu] Chemical compound [Se].[S].[In].[Cu] QXKUQUSBOISHGH-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- COOGPNLGKIHLSK-UHFFFAOYSA-N aluminium sulfide Chemical compound [Al+3].[Al+3].[S-2].[S-2].[S-2] COOGPNLGKIHLSK-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 description 1
- LCUOIYYHNRBAFS-UHFFFAOYSA-N copper;sulfanylideneindium Chemical compound [Cu].[In]=S LCUOIYYHNRBAFS-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- KYKLWYKWCAYAJY-UHFFFAOYSA-N oxotin;zinc Chemical compound [Zn].[Sn]=O KYKLWYKWCAYAJY-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 229910052701 rubidium Inorganic materials 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
- ZVWKZXLXHLZXLS-UHFFFAOYSA-N zirconium nitride Chemical compound [Zr]#N ZVWKZXLXHLZXLS-UHFFFAOYSA-N 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention provides a preparation method of an alkali metal layer of a thin film solar cell and coating equipment, wherein the method comprises the following steps: heating the substrate with the back electrode layer, and adjusting the temperature of the substrate to reach a preset deposition temperature threshold; heating an alkali metal source, and adjusting the heating power of the alkali metal source to reach a preset power threshold or adjusting the deposition rate to reach a preset deposition rate threshold; and depositing an alkali metal layer with a preset thickness on the surface of the back electrode layer far from the substrate before forming the absorption layer according to the temperature of the substrate and the heating power or the deposition rate of the alkali metal source. According to the method, the amount of the alkali metal is accurately preset by controlling the process parameters, the alkali metal layer with the preset thickness is deposited on the surface of the back electrode layer far away from the substrate, the aim of accurately controlling the Na content is achieved by controlling the amount of the alkali metal Na in the absorption layer of the thin-film solar cell, the nucleation and the growth of the absorption layer of the thin-film solar cell are controlled, and the power generation efficiency of the thin-film solar cell is improved.
Description
Technical Field
The invention relates to the technical field of thin film solar cell coating, in particular to a preparation method of an alkali metal layer of a thin film solar cell and coating equipment.
Background
The research on thin-film solar cells has been rapidly developed in recent years and has become the most active direction in the field of solar cells, and among them, copper indium gallium selenide is particularly attractive and is the best and most practical system which can simultaneously achieve high efficiency and low cost in the solar cell material system.
Currently, most of the copper indium gallium selenide batteries are produced by a vacuum evaporation method, which is generally called co-evaporation. The co-evaporation coating is a process method of evaporating a coating material (or called a coating material) by a certain heating evaporation mode under a vacuum condition and gasifying the coating material into particles, and the particles fly to the surface of a substrate to condense and form a film. The co-evaporation has the advantages of simple film forming method, high film purity and compactness, unique film structure and performance and the like; since the light absorption layer of the thin-film solar cell formed by the co-evaporation film needs to incorporate an appropriate amount of Na, the power generation efficiency of the thin-film solar cell is improved.
In the prior art, soda-lime glass is used as substrate glass for introducing sodium, a loose molybdenum layer is arranged on the surface of the soda-lime glass, and a light absorption layer of a thin-film solar cell is plated on the molybdenum layer. The softening temperature of the soda-lime glass is lower and is about 580 ℃, the maximum deposition temperature of the light absorption layer of the thin-film solar cell is about 530 ℃, and the excessively high deposition temperature can cause the substrate glass to be rapidly softened and sagged in the process, so that the warping degree of the glass is increased, and the phenomenon that the substrate glass is easily broken when the thin-film solar cell is laminated can be caused due to the increase of the warping degree of the glass. Furthermore, the structure in the prior art has the technical problem that the content of sodium diffused into the absorption layer of the thin film solar cell cannot be accurately controlled, so that the power generation efficiency of the thin film solar cell is influenced.
Disclosure of Invention
The invention provides a preparation method of an alkali metal layer of a thin-film solar cell and coating equipment, and aims to solve the technical problem that the generation efficiency of the thin-film solar cell is influenced because the content of sodium in soda-lime glass diffusing into an absorption layer of the thin-film solar cell cannot be accurately controlled in the prior art.
In a first aspect, the present application provides a method for preparing an alkali metal layer of a thin-film solar cell, where the solar cell includes a substrate, a back electrode layer, an alkali metal layer, an absorption layer, a buffer layer, a window layer, and a top electrode layer, which are sequentially stacked, and the method for preparing the alkali metal layer includes:
heating the substrate with the back electrode layer, and adjusting the temperature of the substrate to reach a preset deposition temperature threshold; and
heating an alkali metal source, and adjusting the heating power of the alkali metal source to reach a preset power threshold value, or adjusting the deposition rate of the alkali metal source to reach a preset deposition rate threshold value;
and depositing an alkali metal layer with a preset thickness on the surface of the back electrode layer far away from the substrate before forming the absorption layer according to the temperature of the substrate and the heating power or the deposition rate of the alkali metal source.
Optionally, in the preparation method of the alkali metal layer of the thin film solar cell, the preset deposition rate threshold is 0.05-0.8 nm/s.
Optionally, in the preparation method of the alkali metal layer of the thin film solar cell, the preset deposition rate threshold is 0.1-0.5 nm/s.
Optionally, in the preparation method of the alkali metal layer of the thin film solar cell, the preset power threshold is 600-2000W.
Optionally, in the preparation method of the alkali metal layer of the thin film solar cell, the preset power threshold is 900-1500W.
Optionally, in the preparation method of the alkali metal layer of the thin film solar cell, the preset deposition temperature threshold is 200-500 ℃, and the preset thickness is 2-100 nm.
Optionally, in the preparation method of the alkali metal layer of the thin film solar cell, the preset deposition temperature threshold is 300-480 ℃, and the preset thickness is 10-50 nm.
Optionally, in the above method for preparing an alkali metal layer of a thin film solar cell, the alkali metal source is filled with a solid alkali metal compound, the substrate is heated to reach a preset deposition temperature threshold, and the solid alkali metal compound is heated until the heating power reaches a preset power threshold, or the solid alkali metal compound is heated until the deposition rate reaches a preset deposition rate threshold, so that the solid alkali metal compound is evaporated to form gaseous alkali metal cations and anions, and is deposited on the surface of the back electrode layer away from the substrate.
Optionally, in the above method for preparing an alkali metal layer of a thin film solar cell, the alkali metal source has an even number of rows, the even number of rows of alkali metal sources are disposed in a coating chamber, and along the width direction of the coating chamber, the even number of rows of alkali metal sources are symmetrically disposed on two sides of the coating chamber.
Optionally, in the above method for preparing an alkali metal layer of a thin film solar cell, an included angle between a center line of the alkali metal source and a reference line is 16 to 50 °, and the reference line is a straight line perpendicular to the bottom of the coating chamber.
In a second aspect, the present application provides a coating apparatus for preparing an alkali metal layer of a thin film solar cell by the preparation method as described above, the coating apparatus comprising an alkali metal source, a first heater and a second heater; the alkali metal source is filled with an alkali metal compound raw material;
the controller is used for controlling the first heater to heat the substrate, enabling the temperature of the substrate to reach a preset temperature threshold value, and controlling the second heater to heat the alkali metal source, so that the heating power of the alkali metal source reaches a first preset power threshold value or the deposition rate of the alkali metal source reaches a first preset deposition rate threshold value.
The embodiment of the invention adopts at least one technical scheme which can achieve the following beneficial effects:
the application provides a preparation method of an alkali metal layer of a thin-film solar cell and coating equipment, which are used for heating a substrate, adjusting the temperature of the substrate to reach a preset deposition temperature threshold, adjusting the heating power of an alkali metal source to reach a preset power threshold or adjusting the deposition rate of the alkali metal source to reach a preset deposition rate threshold, accurately presetting the amount of alkali metal (such as Na) by controlling the process parameters, further depositing the alkali metal layer with preset thickness on the surface of a back electrode layer far away from the substrate, and realizing the purpose of accurately controlling the Na content by controlling the amount of the alkali metal Na in an absorption layer of the thin-film solar cell.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the invention and not to limit the invention. In the drawings:
FIG. 1 is a schematic structural diagram of a thin film solar cell according to an embodiment of the present invention;
FIG. 2 is a flow chart of a method for preparing an alkali metal layer of a thin film solar cell according to an embodiment of the present invention;
FIG. 3 is a schematic structural diagram of a thin film solar cell according to another embodiment of the present invention;
FIG. 4 is a structural composition diagram of a coating apparatus according to an embodiment of the present invention;
FIG. 5 is a schematic diagram of the arrangement of alkali metal sources in a coating chamber according to an embodiment of the present invention;
FIG. 6 is a side view of a coating chamber according to an embodiment of the present invention;
FIG. 7 is a schematic diagram illustrating an arrangement of two rows of metal evaporation sources and one row of non-metal evaporation sources in a deposition chamber according to an embodiment of the present invention;
FIG. 8 is a front view of a deposition chamber in an embodiment of the invention;
FIG. 9 is a side view of a deposition chamber in accordance with an embodiment of the invention;
the reference signs are:
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the technical solutions of the present invention will be clearly and completely described below with reference to the specific embodiments of the present invention and the accompanying drawings. It is to be understood that the described embodiments are merely a few embodiments of the invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the prior art, soda-lime glass is used as substrate glass for introducing sodium, a loose molybdenum layer is arranged on the surface of the soda-lime glass, and a light absorption layer of a thin-film solar cell is plated on the molybdenum layer, so that the prior art has the following problems: (1) since soda lime glass supplied by glass suppliers does not have a fixed Na content, the Na content diffused into the light absorption layer of the thin film solar cell cannot be controlled; (2) the diffusion rate of Na penetrating through the molybdenum layer at high temperature cannot be accurately controlled; (3) if the amount of Na is not introduced enough, the Na is not enough to passivate grain boundary defects in a light absorption layer of the thin film solar cell; (4) na can enter the light absorption layer of the thin-film solar cell only by diffusing and penetrating the molybdenum layer, so that a loose molybdenum layer is arranged and has the problem of higher resistance; all of the above problems cause a reduction in the power generation efficiency of the thin film solar cell.
Based on the situation, the invention provides a preparation method of an alkali metal layer of a thin film solar cell, which aims to solve the problem that the generation efficiency of the thin film solar cell is influenced because the content of sodium in soda-lime glass diffusing into an absorption layer of the thin film solar cell cannot be accurately controlled in the prior art.
The technical solutions provided by the embodiments of the present invention are described in detail below with reference to the accompanying drawings.
Example 1:
as shown in fig. 1, embodiment 1 of the present application provides a thin film solar cell, which includes a substrate 3, a back electrode layer 4, a buffer layer 9, a window layer 10, and a top electrode layer 8, which are sequentially disposed, wherein an alkali metal layer 6 and an absorption layer 7 are further disposed between the back electrode layer 4 and the buffer layer 9, the alkali metal layer 6 is disposed on a surface of the back electrode layer 4 away from the substrate 3, and the absorption layer 7 is disposed on a surface of the alkali metal layer 6 away from the substrate 3.
In example 1, the substrate 3 is soda-lime glass or other glass substrate.
The back electrode layer 4 is a molybdenum layer, preferably a dense molybdenum layer. The compact molybdenum layer has small resistance, and the power generation efficiency of the thin-film solar cell can be improved.
The absorption layer 7 is one or a combination of at least two of a copper indium gallium selenide film layer, a copper indium gallium selenide sulfur film layer, a copper indium gallium aluminum sulfide film layer, a copper indium selenide sulfur film layer and a copper indium sulfide film layer.
Buffer layer 9 may be selected from a cadmium sulfide layer and/or a zinc sulfide layer, as well as other N-type materials.
The window layer 10 can be selected from a high-resistivity intrinsic zinc oxide layer and a low-resistivity aluminum-doped zinc oxide layer.
The material of the top electrode layer 8 can be selected from aluminum wires and/or nickel wires, and other metal conductive wires can also be selected.
Fig. 2 is a flowchart of a method for preparing an alkali metal layer of a thin film solar cell provided in embodiment 1, wherein arrows in fig. 2 do not particularly indicate that step S01 and step S02 are necessarily performed in this order, and the order of these two steps can be switched or performed simultaneously.
The alkali metal layer 6 of example 1 was deposited using a method of making an alkali metal layer for a thin film solar cell as described below.
Specifically, as shown in fig. 2, a method for preparing an alkali metal layer of a thin film solar cell provided in embodiment 1 includes:
s01, heating the substrate 3 with the back electrode layer 4, and adjusting the temperature of the substrate 3 to reach a preset deposition temperature threshold; and
s02, heating alkali metal source 211, adjusting the heating power of alkali metal source 211 to reach a preset power threshold, or adjusting the deposition rate of alkali metal source 211 to reach a preset deposition rate threshold;
s03, depositing alkali metal layer 6 with a predetermined thickness on the surface of back electrode layer 4 away from substrate 3 before forming said absorption layer 7, according to the temperature of substrate 3 and the heating power or deposition rate of alkali metal source 211.
The alkali metal layer 6 comprises alkali metal elements and nonmetal elements, wherein the alkali metal elements can be one or a mixture of at least two of L i, Na, K, Rb and Cs, preferably Na, and the nonmetal elements are halogen elements, preferably F.
In embodiment 1 of the present application, by heating the substrate 3, the temperature of the substrate 3 is adjusted to reach a preset deposition temperature threshold, the heating power of the alkali metal source 211 is adjusted to reach a preset power threshold or the deposition rate of the alkali metal source 211 reaches a preset deposition rate threshold, the amount of an alkali metal (for example, Na) is accurately preset by controlling the above process parameters, further, the alkali metal layer 6 with a preset thickness is deposited on the surface of the back electrode layer 4 away from the substrate 3, the purpose of accurately controlling the Na content is realized by controlling the amount of the alkali metal Na in the absorption layer 7 of the thin film solar cell, the Na content is not needed in soda-lime glass, the Na content is more easily controlled, further, the nucleation and growth of the absorption layer 7 of the thin film solar cell are controlled, and the power generation efficiency of the thin film solar cell is improved.
In example 1, during the deposition of the alkali metal layer 6, the preset deposition temperature threshold is 200-500 ℃ and the preset power threshold is 600-2000W, since the deposition rate is associated with the heating power, once the preset power threshold is determined, the preset deposition rate threshold is determined, and therefore, when the heating power of the alkali metal source is adjusted to reach the preset power threshold, the deposition rate of the alkali metal source reaches the preset deposition rate threshold, specifically 0.05-0.8 nm/s.
Since the deposition thickness of the alkali metal source is related to the deposition temperature, and the heating power of the alkali metal source or the deposition rate of the alkali metal source on the premise that the length of the coating chamber, the deposition pressure, and the transfer rate of the substrate 3 are fixed, once the preset deposition temperature threshold and the preset deposition rate threshold are determined, the preset thickness value is also substantially determined. Therefore, the deposition temperature of the substrate is controlled to reach the preset deposition temperature threshold, the heating power of the alkali metal source is controlled to reach the preset power threshold, or the deposition rate of the alkali metal source is controlled to reach the preset deposition rate threshold, and the thickness of the alkali metal layer obtained in the embodiment is controlled to be within the preset thickness range of 2-100 nm. By adjusting or controlling the above parameters, the embodiment can effectively meet the requirement of depositing the alkali metal layer 6 of the appropriate amount of alkali metal element on the surface of the back electrode layer 4, thereby better improving the crystallinity and conductivity of the CIGS thin film to be formed.
Optionally, the preset deposition temperature threshold is 300-480 ℃, the preset power threshold is 900-1500W, the preset deposition rate threshold is 0.1-0.5 nm/s, and the preset thickness is 10-50 nm. The thin-film solar cell made of the alkali metal with the thickness has high power generation efficiency.
Optionally, the preset deposition temperature threshold is 350-450 ℃, the preset power threshold is 1000-1300W, the preset deposition rate threshold is 0.15-0.45 nm/s, and the preset thickness is 15-45 nm.
Optionally, the preset deposition temperature threshold is 380-420 ℃, the preset power threshold is 1100-1200W, the preset deposition rate threshold is 0.2-0.4 nm/s, and the preset thickness is 20-40 nm.
In example 1, the material constituting alkali metal source 211 comprises an alkali metal compound including an alkali metal element containing sodium, preferably NaF, and the problem of the prior art that the sodium content in soda-lime glass cannot be accurately controlled is improved by providing an alkali metal containing Na.
In embodiment 1, the method for depositing the alkali metal layer 6 with a preset thickness on the surface of the back electrode layer 4 away from the substrate 3 specifically includes: filling the alkali metal source 211 with a solid alkali metal compound, heating the substrate 3 to reach a preset deposition temperature threshold, and heating the solid alkali metal compound until the heating power reaches the preset power threshold, or heating the solid alkali metal compound until the deposition rate reaches the preset deposition rate threshold, so that the solid alkali metal compound is evaporated to form gaseous alkali metal cations (e.g., Na ions) and anions (e.g., F ions), and is deposited on the surface of the back electrode layer 4 away from the substrate 3. The conductivity and crystallinity of the absorption layer 7 of the thin-film solar cell to be formed are improved by controlling the deposition amount of Na ions on the surface of the back electrode layer 4.
Example 2:
as shown in fig. 3, embodiment 2 provides a thin film solar cell, which includes a barrier layer 5 in addition to the substrate 3, the back electrode layer 4, the alkali metal layer 6, the absorber layer 7, the buffer layer 9, the window layer 10, and the top electrode layer 8 described in embodiment 1, wherein the barrier layer 5 is disposed between the substrate 3 and the back electrode layer 4.
In embodiment 2, the back electrode layer 4 is one of or a combination of at least two of a molybdenum electrode layer, a titanium electrode layer, a chromium electrode layer, and a transparent conductive layer which are dense in structure.
The material of the barrier layer 5 is one or a mixture of at least two of silicon oxide, silicon nitride, silicon oxynitride, titanium nitride, titanium oxide, titanium oxynitride, zirconium oxide, zirconium nitride, aluminum oxide, silicon aluminum nitride, silicon aluminum oxynitride, and zinc tin oxide.
Example 3:
as shown in fig. 4 and 5, the alkali metal source 211 mentioned in the method for preparing an alkali metal layer of a thin film solar cell of example 3 of the present application has an even number of rows, the even number of rows of alkali metal sources 211 are disposed in the plating chamber 21, and the even number of rows of alkali metal sources 211 are symmetrically disposed at both sides of the plating chamber 21 along the width direction 212 of the plating chamber 21. Each row of alkali metal sources 211 is arranged on the outer wall of the coating chamber 21 in a straight line, and each row of alkali metal sources 211 may be arranged on the outer wall of the coating chamber 21 in a zigzag line or a curve, etc.
As shown in FIG. 6, the included angle γ between the center line 213 of the alkali metal source 211 and the reference line 214 is 16 to 50 °, and the reference line 214 is a straight line perpendicular to the bottom of the plating chamber 21.
Preferably, the angle γ between the center line 213 of the alkali metal source 211 and a reference line 214 perpendicular to the bottom of the coating chamber 21 is 20 to 45 °, preferably 25 °, 30 °, 35 ° or 42 °.
Example 4:
as shown in fig. 4, embodiment 4 of the present application provides a plating apparatus including an alkali metal source 211, a first heater, and a second heater; the alkali metal source 211 is filled with an alkali metal compound raw material;
the controller is used for controlling the first heater to heat the substrate 3, so that the temperature of the substrate 3 reaches a preset temperature threshold value, and controlling the second heater to heat the alkali metal source 211, so that the heating power of the alkali metal source 211 reaches a first preset power threshold value or the deposition rate of the alkali metal source reaches a first preset deposition rate threshold value.
The alkali metal source 211, the first heater, and the second heater are disposed in the coating chamber 21.
The heating chamber B24 is connected between the coating chamber 21 and the deposition chamber 1.
The deposition chamber 1 is used for depositing metal elements and non-metal elements on the surface of the alkali metal layer 6 far away from the substrate 3 to form an absorption layer 7 of the thin film solar cell.
As shown in fig. 7, the deposition chamber 1 includes at least two rows of metal evaporation sources 11 and at least one row of non-metal evaporation sources 12; each row of metal evaporation sources 11 comprises at least two metal evaporation sources 11; along the width and length direction of the deposition chamber 1, at least two rows of metal evaporation sources 11 are respectively arranged on two sides of the deposition chamber 1, for example: the three rows are one row at one side and two rows at the other side, and the arrangement mode is analogized in sequence; and each row of metal evaporation sources 11 are linearly arranged on the outer wall of the deposition chamber 1; the total number of the metal evaporation sources 11 in each row is 8-15. The metal evaporation source 11 is linearly arranged on the outer wall of the deposition chamber 1, and the metal evaporation source 11 can be arranged on the outer wall of the deposition chamber 1 in a broken line mode or a curve mode. The present invention will be described in detail below with reference to specific examples and comparative examples of the present application:
if each row of metal evaporation sources 11 In the deposition chamber 1 comprises a gallium Ga evaporation source, an indium In evaporation source and a copper Cu evaporation source, each non-metal evaporation source comprises a Se evaporation source, at least one row of non-metal evaporation sources 12 is arranged between two adjacent rows of metal evaporation sources 11, the non-metal evaporation sources 12 are Se evaporation sources, as shown In FIGS. 8 and 9, the metal evaporation sources 11 are respectively arranged at the bottom 15 of the deposition chamber 1 along the width direction 13 of the deposition chamber 1, the included angle α between the central line 15 of each row of metal evaporation sources 11 and the reference line 14 is 10-70 degrees, preferably 20-45 degrees, the reference line 14 is a straight line perpendicular to the bottom of the deposition chamber 1, preferably 30 degrees, 35 degrees or 42 degrees, and the included angle β between the central line 15 of each row of non-metal evaporation sources 12 and the reference line 14 is 3-18 degrees.
As shown in fig. 4, the coating apparatus further includes a first feeding chamber 20 and a second feeding chamber 200, and the substrate 3 first passes through the first feeding chamber 20 and the second feeding chamber 200 before entering the deposition chamber 1 to transfer and vacuumize the substrate 3.
In the embodiment of the present invention, a heating chamber a23 is connected in series between the second feeding chamber 200 and the coating chamber 1, and the first heater is disposed in the heating chamber a23 and is configured to heat the substrate 3, so that the temperature of the substrate 3 reaches a preset temperature threshold, which satisfies the requirement that an alkali metal layer 6 is deposited on the surface of the substrate 3 in the coating chamber 21, thereby achieving the purpose of a pretreatment process; a heating chamber B24 is arranged between the deposition chamber 1 and the coating chamber 21, and the heating chamber B24 is heated to make the temperature of the substrate 3 meet the requirement of the deposition chamber 1 for coating, i.e. make the temperature of the substrate 3 meet the requirement of depositing Cu, In, Ga, Se In the deposition chamber 1.
The temperature of the heating chamber A23 is 150-250 ℃ so as to heat the glass substrate; the temperature of the coating chamber 21 is 200-500 ℃, the coating chamber 21 is used for heating the substrate 3 to reach a preset deposition temperature threshold, heating the solid alkali metal compound until the heating power reaches a preset power threshold, or heating the solid alkali metal compound until the deposition rate reaches a preset deposition rate threshold, so that the solid alkali metal compound is evaporated to form gaseous alkali metal cations and anions, and the gaseous alkali metal cations and the anions are deposited on the surface of the substrate 3 on which the back electrode layer 4 is formed, then enter the heating chamber B, are continuously heated by the heating chamber B24 with the temperature of 400-500 ℃, and then enter the deposition chamber 1 with the temperature of 200-600 ℃, wherein the temperature can meet the requirement that the vaporized Cu, In and Ga are deposited on the surface of the glass substrate to form a CIGS film, and the thickness can meet the preset requirement; the substrate with the CIGS film formed on the surface sequentially passes through the cooling chamber 25 and the discharging chamber 26, and the substrate 3 with the temperature not higher than 100 ℃ is formed after passing through the cooling chamber 25, so that potential safety hazards caused by overhigh temperature are effectively avoided, and the safety is improved; and the product of the discharging chamber 26 is the substrate 3 plated with the NaF film layer and the CIGS film layer.
Sample 1:
example 1 provides a thin film solar cell, including substrate 3, back electrode layer 4, alkali metal layer 6, absorbed layer 7, buffer layer 9, window layer 10 and the top electrode layer 8 that sets gradually, wherein, absorbed layer 7 is the copper indium gallium selenide rete, adopts the following structure's deposition chamber 1 to accomplish the deposit:
in the deposition chamber 1, two rows of metal evaporation sources 11 are symmetrically arranged, wherein each row of metal evaporation sources 11 is linearly arranged with 8 metal evaporation sources, α is 30 degrees, two rows of non-metal evaporation sources 12 are arranged, the number of each row of non-metal evaporation sources 12 is 9, β is 20 degrees, and the arrangement modes are Ga evaporation source, Cu evaporation source, In evaporation source, Ga evaporation source and In evaporation source;
the alkali metal layer 6 is a coating chamber 21 having the following structure, and in the coating chamber 21, the process parameters of the alkali metal source are set as follows:
the deposition temperature of substrate 3 is 200 deg.c, alkali metal sources 211 are arranged in 2 rows, each row contains 3 alkali metal sources 211, the included angle gamma between the central line 213 of alkali metal source 211 and the reference line 214 vertical to the bottom of coating chamber 21 is 16 deg., the heating power of alkali metal source 211 is 600W, the deposition rate is 0.05nm/s, and the thickness of alkali metal deposition is 2nm, wherein alkali metal source 211 is NaF source.
Example 2:
example 2 provides a thin film solar cell, including substrate 3, back electrode layer 4, alkali metal layer 6, absorbed layer 7, buffer layer 9, window layer 10 and the top electrode layer 8 that sets gradually, wherein, absorbed layer 7 is the copper indium gallium selenide rete, adopts the following structure's deposition chamber 1 to accomplish the deposit:
in the deposition chamber 1, two rows of metal evaporation sources 11 are symmetrically arranged, wherein each row of metal evaporation sources 11 is linearly arranged with 8 metal evaporation sources, α is 30 degrees, two rows of non-metal evaporation sources 12 are arranged, the number of each row of non-metal evaporation sources 12 is 9, β is 20 degrees, and the arrangement modes are Ga evaporation source, Cu evaporation source, In evaporation source, Ga evaporation source and In evaporation source;
the alkali metal layer 6 is a coating chamber 21 having the following structure, and in the coating chamber 21, the process parameters of the alkali metal source are set as follows:
the deposition temperature of substrate 3 is 300 deg.c, alkali metal sources 211 are arranged in 2 rows, each row containing 3 alkali metal sources 211, the included angle gamma between the center line 213 of alkali metal source 211 and the reference line 214 perpendicular to the bottom of coating chamber 21 is 20 deg., the heating power threshold of alkali metal source 211 is 900W, the deposition rate is 0.1nm/s, and the thickness of the alkali metal deposition is 10nm, wherein alkali metal source 211 is selected from NaF source.
Example 3:
example 3 provides a thin film solar cell, including substrate 3, back electrode layer 4, alkali metal layer 6, absorbed layer 7, buffer layer 9, window layer 10 and the top electrode layer 8 that sets gradually, wherein, absorbed layer 7 is the copper indium gallium selenide rete, adopts the following structure's deposition chamber 1 to accomplish the deposit:
in the deposition chamber 1, two rows of metal evaporation sources 11 are symmetrically arranged, wherein each row of metal evaporation sources 11 is linearly arranged with 8 metal evaporation sources, α is 30 degrees, two rows of non-metal evaporation sources 12 are arranged, the number of each row of non-metal evaporation sources 12 is 9, β is 20 degrees, and the arrangement modes are Ga evaporation source, Cu evaporation source, In evaporation source, Ga evaporation source and In evaporation source;
the alkali metal layer 6 is a coating chamber 21 having the following structure, and in the coating chamber 21, the process parameters of the alkali metal source are set as follows:
the deposition temperature of substrate 3 is 350 deg.c, alkali metal sources 211 are arranged in 2 rows, each row contains 3 alkali metal sources 211, the included angle gamma between the central line 213 of alkali metal sources 211 and the reference line 214 vertical to the bottom of coating chamber 21 is 25 deg., the heating power of alkali metal sources 211 is 1000W, the deposition rate is 0.15nm/s, and the thickness of alkali metal deposition is 15nm, wherein alkali metal sources 211 is NaF source.
Example 4:
example 4 provides a thin film solar cell, including substrate 3, back electrode layer 4, alkali metal layer 6, absorbed layer 7, buffer layer 9, window layer 10 and the top electrode layer 8 that sets gradually, wherein, absorbed layer 7 is the copper indium gallium selenide rete, adopts the following structure's deposition chamber 1 to accomplish the deposit:
in the deposition chamber 1, two rows of metal evaporation sources 11 are symmetrically arranged, wherein each row of metal evaporation sources 11 is linearly arranged with 8 metal evaporation sources, α is 30 degrees, two rows of non-metal evaporation sources 12 are arranged, the number of each row of non-metal evaporation sources 12 is 9, β is 20 degrees, and the arrangement modes are Ga evaporation source, Cu evaporation source, In evaporation source, Ga evaporation source and In evaporation source;
the alkali metal layer 6 is a coating chamber 21 having the following structure, and in the coating chamber 21, the process parameters of the alkali metal source are set as follows:
the deposition temperature of substrate 3 was 360 deg.c, alkali metal sources 211 were arranged in 2 rows, each row containing 3 alkali metal sources 211, the angle γ between the center line 213 of alkali metal source 211 and the reference line 214 perpendicular to the bottom of plating chamber 21 was 30 deg., the heating power of alkali metal source 211 was 1150W, the deposition rate was 0.3nm/s, and the alkali metal deposition thickness was 30 nm. Wherein, the alkali metal source 211 is NaF source.
Example 5:
example 5 provides a thin film solar cell, including substrate 3, back electrode layer 4, alkali metal layer 6, absorbed layer 7, buffer layer 9, window layer 10 and the top electrode layer 8 that sets gradually, wherein, absorbed layer 7 is the copper indium gallium selenide rete, adopts the following structure's deposition chamber 1 to accomplish the deposit:
in the deposition chamber 1, two rows of metal evaporation sources 11 are symmetrically arranged, wherein each row of metal evaporation sources 11 is linearly arranged with 8 metal evaporation sources, α is 30 degrees, two rows of non-metal evaporation sources 12 are arranged, the number of each row of non-metal evaporation sources 12 is 9, β is 20 degrees, and the arrangement modes are Ga evaporation source, Cu evaporation source, In evaporation source, Ga evaporation source and In evaporation source;
the alkali metal layer 6 is a coating chamber 21 having the following structure, and in the coating chamber 21, the process parameters of the alkali metal source are set as follows:
the deposition temperature of the substrate 3 is 380 deg.c, the alkali metal sources 211 are arranged in 2 rows, each row contains 3 alkali metal sources 211, the included angle gamma between the central line 213 of the alkali metal source 211 and the reference line 214 vertical to the bottom of the coating chamber 21 is 35 deg., the heating power of the alkali metal source 211 is 1200W, the deposition rate is 0.4nm/s, and the thickness of the alkali metal deposition is 40nm, wherein the alkali metal source 211 is selected from NaF source.
Example 6:
example 6 provides a thin film solar cell, including substrate 3, back electrode layer 4, alkali metal layer 6, absorbed layer 7, buffer layer 9, window layer 10 and the top electrode layer 8 that sets gradually, wherein, absorbed layer 7 is the copper indium gallium selenide rete, adopts the following structure's deposition chamber 1 to accomplish the deposit:
in the deposition chamber 1, two rows of metal evaporation sources 11 are symmetrically arranged, wherein each row of metal evaporation sources 11 is linearly arranged with 8 metal evaporation sources, α is 30 degrees, two rows of non-metal evaporation sources 12 are arranged, the number of each row of non-metal evaporation sources 12 is 9, β is 20 degrees, and the arrangement modes are Ga evaporation source, Cu evaporation source, In evaporation source, Ga evaporation source and In evaporation source;
the alkali metal layer 6 is a coating chamber 21 having the following structure, and in the coating chamber 21, the process parameters of the alkali metal source are set as follows:
the deposition temperature of substrate 3 was 390 c, alkali metal sources 211 were arranged in 2 rows, each row containing 3 alkali metal sources 211, the angle γ between the center line 213 of alkali metal source 211 and a reference line 214 perpendicular to the bottom of coating chamber 21 was 40 °, the heating power of alkali metal source 211 was 1300W, the deposition rate was 0.5nm/s, and the alkali metal deposition thickness was 50nm, wherein alkali metal source 211 was selected as NaF source.
Example 7:
example 7 provides a thin film solar cell, including substrate 3, back electrode layer 4, alkali metal layer 6, absorbed layer 7, buffer layer 9, window layer 10 and the top electrode layer 8 that sets gradually, wherein, absorbed layer 7 is the copper indium gallium selenide rete, adopts the following structure's deposition chamber 1 to accomplish the deposit:
in the deposition chamber 1, two rows of metal evaporation sources 11 are symmetrically arranged, wherein each row of metal evaporation sources 11 is linearly arranged with 8 metal evaporation sources, α is 30 degrees, two rows of non-metal evaporation sources 12 are arranged, the number of each row of non-metal evaporation sources 12 is 9, β is 20 degrees, and the arrangement modes are Ga evaporation source, Cu evaporation source, In evaporation source, Ga evaporation source and In evaporation source;
the alkali metal layer 6 is a coating chamber 21 having the following structure, and in the coating chamber 21, the process parameters of the alkali metal source are set as follows:
the deposition temperature of substrate 3 is 400 deg.c, alkali metal sources 211 are arranged in 2 rows, each row contains 3 alkali metal sources 211, the included angle gamma between the central line 213 of alkali metal sources 211 and the reference line 214 vertical to the bottom of coating chamber 21 is 45 deg., the heating power of alkali metal sources 211 is 1500W, the deposition rate is 0.6nm/s, and the thickness of alkali metal deposition is 60nm, wherein alkali metal sources 211 is NaF source.
Example 8:
example 8 provides a thin film solar cell, including substrate 3, back electrode layer 4, alkali metal layer 6, absorbed layer 7, buffer layer 9, window layer 10 and the top electrode layer 8 that sets gradually, wherein, absorbed layer 7 is the copper indium gallium selenide rete, adopts the following structure's deposition chamber 1 to accomplish the deposit:
in the deposition chamber 1, two rows of metal evaporation sources 11 are symmetrically arranged, wherein each row of metal evaporation sources 11 is linearly arranged with 8 metal evaporation sources, α is 30 degrees, two rows of non-metal evaporation sources 12 are arranged, the number of each row of non-metal evaporation sources 12 is 9, β is 20 degrees, and the arrangement modes are Ga evaporation source, Cu evaporation source, In evaporation source, Ga evaporation source and In evaporation source;
the alkali metal layer 6 is a coating chamber 21 having the following structure, and in the coating chamber 21, the process parameters of the alkali metal source are set as follows:
the deposition temperature of substrate 3 is 500 deg.c, alkali metal sources 211 are arranged in 2 rows, each row containing 3 alkali metal sources 211, the included angle gamma between the center line 213 of alkali metal source 211 and a reference line 214 perpendicular to the bottom of coating chamber 21 is 50 deg., the heating power threshold of alkali metal source 211 is 2000W, the deposition rate is 0.8nm/s, and the thickness of the alkali metal deposition is 100nm, wherein alkali metal source 211 is selected from NaF source.
Comparative example 1:
comparative example 1 provides a thin-film solar cell, including substrate 3, back electrode layer 4, alkali metal layer 6, absorbed layer 7, buffer layer 9, window layer 10 and the top electrode layer 8 that sets gradually, wherein, absorbed layer 7 is the copper indium gallium selenide rete, adopts the following structure's deposition chamber 1 to accomplish the deposit:
in the deposition chamber 1, two rows of metal evaporation sources 11 are symmetrically arranged, wherein each row of metal evaporation sources 11 is linearly arranged with 8 metal evaporation sources, α is 30 degrees, two rows of non-metal evaporation sources 12 are arranged, the number of each row of non-metal evaporation sources 12 is 9, β is 20 degrees, and the arrangement modes are Ga evaporation source, Cu evaporation source, In evaporation source, Ga evaporation source and In evaporation source;
the alkali metal layer 6 is a coating chamber 21 having the following structure, and in the coating chamber 21, the process parameters of the alkali metal source are set as follows:
the deposition temperature of substrate 3 is 100 c, alkali metal sources 211 are arranged in 2 rows, each row containing 3 alkali metal sources 211, the angle γ between the center line 213 of alkali metal source 211 and a reference line 214 perpendicular to the bottom of coating chamber 21 is 16 °, the heating power of alkali metal source 211 is 600W, the deposition rate is 0.05nm/s, and the alkali metal deposition thickness is 1 nm. Wherein, the alkali metal source 211 is NaF source.
Comparative example 2:
comparative example 2 provides a thin-film solar cell, including substrate 3, back electrode layer 4, alkali metal layer 6, absorbed layer 7, buffer layer 9, window layer 10 and the top electrode layer 8 that sets gradually, wherein, absorbed layer 7 is the copper indium gallium selenide rete, and 7 adopts the following structure's deposition chamber 1 to accomplish the deposit:
in the deposition chamber 1, two rows of metal evaporation sources 11 are symmetrically arranged, wherein each row of metal evaporation sources 11 is linearly arranged with 8 metal evaporation sources, α is 30 degrees, two rows of non-metal evaporation sources 12 are arranged, the number of each row of non-metal evaporation sources 12 is 9, β is 20 degrees, and the arrangement modes are Ga evaporation source, Cu evaporation source, In evaporation source, Ga evaporation source and In evaporation source;
the alkali metal layer 6 is a coating chamber 21 having the following structure, and in the coating chamber 21, the process parameters of the alkali metal source are set as follows:
the deposition temperature threshold of substrate 3 is 200 deg.c, alkali metal sources 211 are arranged in 2 rows, each row contains 3 alkali metal sources 211, the included angle gamma between the center line 213 of alkali metal source 211 and the reference line 214 vertical to the bottom of coating chamber 21 is 10 deg., the heating power of alkali metal source 211 is 600W, the deposition rate is 0.05nm/s, and the thickness of alkali metal deposition is 2nm, wherein alkali metal source 211 is NaF source.
Comparative example 3:
comparative example 3 provides a thin-film solar cell, including substrate 3, back electrode layer 4, alkali metal layer 6, absorbed layer 7, buffer layer 9, window layer 10 and the top electrode layer 8 that sets gradually, wherein, absorbed layer 7 is the copper indium gallium selenide rete, and 7 adopts the following structure's deposition chamber 1 to accomplish the deposit:
in the deposition chamber 1, two rows of metal evaporation sources 11 are symmetrically arranged, wherein each row of metal evaporation sources 11 is linearly arranged with 8 metal evaporation sources, α is 30 degrees, two rows of non-metal evaporation sources 12 are arranged, the number of each row of non-metal evaporation sources 12 is 9, β is 20 degrees, and the arrangement modes are Ga evaporation source, Cu evaporation source, In evaporation source, Ga evaporation source and In evaporation source;
the alkali metal layer 6 is a coating chamber 21 having the following structure, and in the coating chamber 21, the process parameters of the alkali metal source are set as follows:
the deposition temperature of substrate 3 is 200 deg.c, alkali metal sources 211 are arranged in 2 rows, each row contains 3 alkali metal sources 211, the included angle between the center line 213 of alkali metal source 211 and the reference line 214 perpendicular to the bottom of coating chamber 21 is 16 deg., the heating power threshold of alkali metal source 211 is 500W, the deposition rate is 0.03nm/s, and the thickness of alkali metal deposition is 1nm, wherein alkali metal source 211 is selected from NaF source.
Comparative example 4:
comparative example 4 provides a thin-film solar cell, including substrate 3, back electrode layer 4, alkali metal layer 6, absorbed layer 7, buffer layer 9, window layer 10 and the top electrode layer 8 that sets gradually, wherein, absorbed layer 7 is the copper indium gallium selenide rete, adopts the following structure's deposition chamber 1 to accomplish the deposit:
in the deposition chamber 1, two rows of metal evaporation sources 11 are symmetrically arranged, wherein each row of metal evaporation sources 11 is linearly arranged with 8 metal evaporation sources, α is 30 degrees, two rows of non-metal evaporation sources 12 are arranged, the number of each row of non-metal evaporation sources 12 is 9, β is 20 degrees, and the arrangement modes are Ga evaporation source, Cu evaporation source, In evaporation source, Ga evaporation source and In evaporation source;
the alkali metal layer 6 is a coating chamber 21 having the following structure, and in the coating chamber 21, the process parameters of the alkali metal source are set as follows:
the deposition temperature of substrate 3 is 100 c and alkali metal source 211 is arranged in 2 rows, each row containing 3 alkali metal sources 211, the centerline of alkali metal source 211. . An angle γ of 10 ° with a reference line perpendicular to the bottom of the coating chamber 21, a heating power of the alkali metal source 211 of 500W, a deposition rate of 0.03nm/s, and an alkali metal deposition thickness of 0.8nm, wherein the alkali metal source 211 is a NaF source.
Comparative example 5:
comparative example 5 provides a thin-film solar cell, including substrate 3, back electrode layer 4, alkali metal layer 6, absorbed layer 7, buffer layer 9, window layer 10 and the top electrode layer 8 that sets gradually, wherein, absorbed layer 7 is the copper indium gallium selenide rete, adopts the following structure's deposition chamber 1 to accomplish the deposit:
in the deposition chamber 1, two rows of metal evaporation sources 11 are symmetrically arranged, wherein each row of metal evaporation sources 11 is linearly arranged with 8 metal evaporation sources, α is 30 degrees, two rows of non-metal evaporation sources 12 are arranged, the number of each row of non-metal evaporation sources 12 is 9, β is 20 degrees, and the arrangement modes are Ga evaporation source, Cu evaporation source, In evaporation source, Ga evaporation source and In evaporation source;
the alkali metal layer 6 is a coating chamber 21 having the following structure, and in the coating chamber 21, the process parameters of the alkali metal source are set as follows:
the deposition temperature of substrate 3 is 600 deg.c, alkali metal sources 211 are arranged in 2 rows, each row contains 3 alkali metal sources 211, the included angle between the center line 213 of alkali metal source 211 and the reference line 214 perpendicular to the bottom of coating chamber 21 is 50 deg., the heating power of alkali metal source 211 is 2000W, the deposition rate is 0.8nm/s, and the thickness of alkali metal deposition is 110nm, wherein alkali metal source 211 is NaF source.
Comparative example 6:
comparative example 6 provides a thin-film solar cell, including substrate 3, back electrode layer 4, alkali metal layer 6, absorbed layer 7, buffer layer 9, window layer 10 and the top electrode layer 8 that sets gradually, wherein, absorbed layer 7 is the copper indium gallium selenide rete, adopts the following structure's deposition chamber 1 to accomplish the deposit:
in the deposition chamber 1, two rows of metal evaporation sources 11 are symmetrically arranged, wherein each row of metal evaporation sources 11 is linearly arranged with 8 metal evaporation sources, α is 30 degrees, two rows of non-metal evaporation sources 12 are arranged, the number of each row of non-metal evaporation sources 12 is 9, β is 20 degrees, and the arrangement modes are Ga evaporation source, Cu evaporation source, In evaporation source, Ga evaporation source and In evaporation source;
the alkali metal layer 6 is a coating chamber 21 having the following structure, and in the coating chamber 21, the process parameters of the alkali metal source are set as follows:
the deposition temperature of substrate 3 is 500 c and alkali metal source 211 is arranged in 2 rows, each row containing 3 alkali metal sources 211, the centerline of alkali metal source 211. . An angle γ of 60 ° with a reference line perpendicular to the bottom of the coating chamber 21, wherein the alkali metal source 211 is NaF source, a heating power of 2000W, a deposition rate of 0.8nm/s, and a preset thickness of 100nm, is set.
Comparative example 7:
comparative example 7 provides a thin-film solar cell, including substrate 3, back electrode layer 4, alkali metal layer 6, absorbed layer 7, buffer layer 9, window layer 10 and the top electrode layer 8 that sets gradually, wherein, absorbed layer 7 is the copper indium gallium selenide rete, adopts the following structure's deposition chamber 1 to accomplish the deposit:
in the deposition chamber 1, two rows of metal evaporation sources 11 are symmetrically arranged, wherein each row of metal evaporation sources 11 is linearly arranged with 8 metal evaporation sources, α is 30 degrees, two rows of non-metal evaporation sources 12 are arranged, the number of each row of non-metal evaporation sources 12 is 9, β is 20 degrees, and the arrangement modes are Ga evaporation source, Cu evaporation source, In evaporation source, Ga evaporation source and In evaporation source;
the alkali metal layer 6 is a coating chamber 21 having the following structure, and in the coating chamber 21, the process parameters of the alkali metal source are set as follows:
the deposition temperature of substrate 3 is 500 deg.c, alkali metal sources 211 are arranged in 2 rows, each row containing 3 alkali metal sources 211, the angle between the center line 213 of alkali metal source 211 and a reference line 214 perpendicular to the bottom of coating chamber 21 is 50 deg., the heating power of alkali metal source 211 is 2200W, the deposition rate is 1nm/s, and the thickness of the alkali metal deposit is 115nm, wherein alkali metal source 211 is selected from NaF source.
Comparative example 8:
comparative example 8 provides a thin-film solar cell, including substrate 3, back electrode layer 4, alkali metal layer 6, absorbed layer 7, buffer layer 9, window layer 10 and the top electrode layer 8 that sets gradually, wherein, absorbed layer 7 is the copper indium gallium selenide rete, adopts the following structure's deposition chamber 1 to accomplish the deposit:
in the deposition chamber 1, two rows of metal evaporation sources 11 are symmetrically arranged, wherein each row of metal evaporation sources 11 is linearly arranged with 8 metal evaporation sources, α is 30 degrees, two rows of non-metal evaporation sources 12 are arranged, the number of each row of non-metal evaporation sources 12 is 9, β is 20 degrees, and the arrangement modes are Ga evaporation source, Cu evaporation source, In evaporation source, Ga evaporation source and In evaporation source;
the alkali metal layer 6 is a coating chamber 21 having the following structure, and in the coating chamber 21, the process parameters of the alkali metal source are set as follows:
the deposition temperature of substrate 3 is 600 deg.c, alkali metal sources 211 are arranged in 2 rows, each row containing 3 alkali metal sources 211, the included angle between the center line 213 of alkali metal source 211 and the reference line 214 perpendicular to the bottom of coating chamber 21 is 60 deg., the heating power of alkali metal source 211 is 2200W, the deposition rate is 1.0nm/s, and the thickness of alkali metal deposition is 130nm, wherein alkali metal source 211 is NaF source.
The conductivity and crystallization properties of the above-mentioned samples 1 to 8 and comparative examples 1 to 8 were tested, and the details are shown in the following tables one and two:
TABLE conductive Properties, crystallization Properties of examples 1-8
TABLE two-to-scale 1-8 parameters of conductivity and crystallization properties
The film uniformity with the thickness of the absorbing layer in the range of 1.8-2.2 μm is the best according to the film uniformity index, and thus it can be seen that the absorbing layer deposition thickness of the samples 1-8 is in the range of 1.8-2.2, while the film thickness of the comparative examples 1-8 is not in the range of 1.8-2.2, and thus the film uniformity of the samples 1-8 is better than that of the comparative examples 1-8.
(1) Comparative example 1 is different from example 1 in that ① the deposition temperature of the substrate 3 of example 1 is 200 c, whereas the deposition temperature of the substrate 3 of comparative example 1 is 100 c, ② the deposition thickness of the alkali metal of example 1 is 2nm, and the deposition thickness of the alkali metal of comparative example 1 is 1nm, and the remaining parameters γ, heating power, and deposition rate are the same, the final test result indicates that the sheet resistance of example 1 is 0.149 Ω/Sq < the sheet resistance of comparative example 1 is 0.267 Ω/Sq, the sheet resistance is a test result of conductivity, the lower the sheet resistance is, the better the conductivity is, and therefore the conductivity of example 1 is better than that of comparative example 1, the crystal size of example 1 is 20nm > the crystal size 17nm of comparative example 1, the crystal size is a test result of crystallinity, the larger the better the crystallinity is, and therefore, the crystallization performance of example 1 is better than that of comparative example 1, and the uniformity, the comparative example and the crystallization performance are all good indexes of power generation of thin-film solar cell, and therefore the power generation power of the thin-film solar cell of sample 1 is better than that of power generation.
(2) Comparative example 2 is different from example 1 in that ① γ of example 1 is 16 °, γ of comparative example 1 is 10 °, the final test index is that the sheet resistance of example 1 is 0.149 Ω/Sq < the sheet resistance of comparative example 2 is 0.331 Ω/Sq, the sheet resistance is a test index of conductivity, the lower the sheet resistance is, the better the conductivity is, thus the conductivity of example 1 is better than that of comparative example 2, the crystal size of example 1 is 20nm > the crystal size of comparative example 2 is 17nm, the crystal size is a test index of crystallinity, the larger the crystal size is, the better the crystallinity is, therefore, the crystallinity of example 1 is better than that of comparative example 2, and the film uniformity, conductivity and crystallinity are all indexes of excellent power generation of thin film solar cell, therefore, the power generation power of thin film solar cell of example 1 is better than that of thin film solar cell of comparative example 2.
(3) Compared with the sample 1, the difference of the comparative example 3 is that ① the heating power of the alkali metal source 211 of the sample 1 is 600W, the heating power threshold of the comparative example 3 is 500W, ② the deposition rate of the sample 1 is 0.05nm/s, the deposition rate of the comparative example 3 is 0.03nm/s, the sheet resistance of the finally tested sample 1 is 0.149 omega/Sq < the sheet resistance of the comparative example 3 is 0.353 omega/Sq, the sheet resistance is a test index of the conductivity, the lower the sheet resistance is, the better the conductivity is, therefore, the conductivity of the sample 1 is better than that of the comparative example 3, the crystal size of the sample 1 is 20nm > the crystal size of the comparative example 3 is 18nm, the crystal size is a test index of the crystallization performance, the larger the crystal size is, the better the crystallization performance is, therefore, the crystallization performance of the sample 1 is better than that of the comparative example 3, and the uniformity, the crystallization performance and the crystallization performance are all indexes of the excellent power generation power of the thin-generating power of the thin-film solar cell of the sample 1 is.
(4) Comparative example 4 is different from example 1 in that ① the deposition temperature of the substrate 3 of example 1 is 200 deg.c, whereas the deposition temperature of the substrate 3 of comparative example 4 is 100 deg.c, ② the deposition rate of example 1 is 16 deg. and whereas γ of comparative example 4 is 10 deg., the heating power of the alkali metal source 211 of ③ the example 1 is 600W, the heating power threshold of comparative example 3 is 500W, ④ the deposition rate of example 1 is 0.05nm/s, the deposition rate of comparative example 4 is 0.03nm/s, ⑤ the alkali metal deposition thickness of example 1 is 2nm, the alkali metal deposition thickness of comparative example 4 is 0.8nm, the final test index of example 1 is 0.149 nm/Sq < 0.149 Ω/Sq of comparative example 4, the sheet resistance is a test index of conductivity, the lower sheet resistance is 381 of the test index of conductivity, therefore the conductivity of example 1 is better than that of comparative example 4, the better crystal size of sample 1 is more than that of crystal size of 16nm, the crystal size of crystal size is a test index of conductivity, the larger is a film solar power generation performance of the comparative example 1, and the crystalline power generation performance of the comparative example 1 is better than that of the crystalline thin film power generation performance of the comparative example 4, therefore, the crystalline thin film power generation performance of the comparative example 1 is better than that of the crystalline solar power generation performance of the comparative example 4 is the crystalline thin film power generation.
(5) Comparative example 5 is different from example 8 in that ① the deposition temperature of the substrate 3 of example 8 is 500 c, while the deposition temperature of the substrate 3 of comparative example 5 is 600 c, ② the deposition thickness of the alkali metal of example 8 is 100nm, and the deposition thickness of the alkali metal of comparative example 5 is 110nm, and the remaining parameters γ, heating power, and deposition rate are the same, the final test result indicates that the sheet resistance of example 8 is 0.288 Ω/Sq < the sheet resistance of comparative example 5 is 0.364 Ω/Sq, the sheet resistance is a test index of conductivity, the lower the sheet resistance the better the conductivity, and thus the conductivity of example 8 is better than that of comparative example 5, the crystal size of example 8 is 28nm > the crystal size of 23nm of comparative example 5, the crystal size is a test index of crystallinity, the larger the better the crystallinity, and thus the crystallinity of example 8 is better than that of comparative example 5, and the uniformity, the comparative example and the crystallinity are all indexes of excellent power generation of thin-film solar cell, and thus the power generation power of the thin-film solar cell of example 8 is better than that of thin-film solar cell.
(6) Comparative example 6 is different from example 8 in that ① γ of example 8 is 50 °, γ of comparative example 6 is 60 °, the final test index is that the sheet resistance of example 8 is 0.288 Ω/Sq < the sheet resistance of comparative example 6 is 0.355 Ω/Sq, the sheet resistance is a test index of conductivity, the lower the sheet resistance is, the better the conductivity is, thus the conductivity of example 8 is better than that of comparative example 6, the crystal size of example 8 is 28nm > the crystal size of comparative example 6 is 22nm, the crystal size is a test index of crystallinity, the larger the crystal size is, the better the crystallinity is, therefore, the crystallinity of example 8 is better than that of comparative example 6, and the film uniformity, conductivity and crystallinity are all indexes of excellent power generation of thin film solar cell, thus the power generation of thin film solar cell of example 8 is better than that of comparative example 6.
(7) Comparative example 7 is different from example 8 in that ① the heating power of the alkali metal source 211 of example 8 is 2000W, the heating power threshold of comparative example 7 is 2200W, ② the deposition rate of example 8 is 0.8nm/s, the deposition rate of comparative example 7 is 1nm/s, the sheet resistance of the index sample 8 finally tested is 0.288 Ω/Sq < the sheet resistance of comparative example 7 of 0.377 Ω/Sq, the sheet resistance is a test index of the conductivity, the lower the sheet resistance is, the better the conductivity is, and therefore the conductivity of example 8 is better than that of comparative example 7, the crystal size of sample 8 is 28nm > the crystal size of comparative example 7 of 23nm, the crystal size is a test index of the crystallinity, the larger the better the crystallinity is, and therefore, the crystallinity of sample 8 is better than that of comparative example 7, and the film, uniformity and crystallinity are all indexes of the excellent power generation of the thin film solar cell, and therefore the power generation power of the thin film solar cell of example 8 is better than that of the thin film solar cell of comparative example 7.
(4) Comparative example 8 is different from example 8 in that ① the deposition temperature of the substrate 3 of example 8 is 500 deg.c, whereas the deposition temperature of the substrate 3 of comparative example 8 is 600 deg.c, ② the γ of example 8 is 50 deg. and whereas γ of comparative example 8 is 60 deg., the heating power of the alkali metal source 211 of ③ the example 8 is 2000W, the heating power threshold of comparative example 8 is 2200W, ④ the deposition rate of example 8 is 0.8nm/s and the deposition rate of comparative example 8 is 1nm/s, ⑤ the alkali metal deposition thickness of example 8 is 100nm and the alkali metal deposition thickness of comparative example 8 is 130nm, the final test index of sample 8 is 0.288 Ω/Sq < 0.371 Ω/Sq of comparative example 8, the sheet resistance is a test index of the conductivity, the lower the sheet resistance is the better, the conductivity of example 8 is better, the crystal size of example 8 is the better, the better the crystal size of example 8 is the conductivity of the comparative example 8, the better is the crystal size of the better is the solar cell performance of the solar cell, the solar cell is better than the comparative example 8 and the crystalline cell is the power generation thin film of the excellent in the solar cell.
In summary, when the preset deposition temperature threshold is 200-500 ℃, the preset power threshold is 600-2000W, the preset deposition rate threshold is 0.05-0.8 nm/s, the preset thickness is 2-100 nm, and the included angle between the center line of the alkali metal source and the reference line is 16-50 °, the power generation power of the thin film solar cell is good.
It should also be noted that the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
While the invention has been described with reference to a preferred embodiment, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (11)
1. A preparation method of an alkali metal layer of a thin film solar cell comprises a substrate, a back electrode layer, the alkali metal layer and an absorption layer which are sequentially stacked, and is characterized in that the preparation method of the alkali metal layer comprises the following steps:
heating the substrate with the back electrode layer, and adjusting the temperature of the substrate to reach a preset deposition temperature threshold; and
heating an alkali metal source, and adjusting the heating power of the alkali metal source to reach a preset power threshold value, or adjusting the deposition rate of the alkali metal source to reach a preset deposition rate threshold value;
and depositing an alkali metal layer with a preset thickness on the surface of the back electrode layer far away from the substrate before forming the absorption layer according to the temperature of the substrate and the heating power or the deposition rate of the alkali metal source.
2. The method for preparing the alkali metal layer of the thin-film solar cell according to claim 1, wherein the preset deposition rate threshold is 0.05-0.8 nm/s.
3. The method for preparing the alkali metal layer of the thin-film solar cell according to claim 1, wherein the preset deposition rate threshold is 0.1-0.5 nm/s.
4. The method for preparing the alkali metal layer of the thin-film solar cell according to claim 1, wherein the preset power threshold is 600-2000W.
5. The method for preparing the alkali metal layer of the thin-film solar cell according to claim 1, wherein the preset power threshold is 900-1500W.
6. The method for preparing the alkali metal layer of the thin-film solar cell according to claim 2 or 4, wherein the preset deposition temperature threshold is 200-500 ℃, and the preset thickness is 2-100 nm.
7. The method for preparing the alkali metal layer of the thin-film solar cell according to claim 3 or 5, wherein the preset deposition temperature threshold is 300-480 ℃, and the preset thickness is 10-50 nm.
8. The method for preparing the alkali metal layer of the thin film solar cell according to any one of claims 1 to 7, wherein the alkali metal source is filled with a solid alkali metal compound, the substrate is heated to reach a preset deposition temperature threshold, and the solid alkali metal compound is heated until the heating power reaches a preset power threshold, or the solid alkali metal compound is heated until the deposition rate reaches a preset deposition rate threshold, so that the solid alkali metal compound is evaporated to form gaseous alkali metal cations and anions, and the gaseous alkali metal cations and the gaseous alkali metal anions are deposited on the surface of the back electrode layer away from the substrate.
9. The method for preparing the alkali metal layer of the thin-film solar cell according to claims 1 to 8, wherein the method comprises the following steps: the alkali metal source has the even number row, and the even number row alkali metal source sets up in the coating cavity, and along the width and length direction of coating cavity, the even number row alkali metal source symmetry sets up the both sides of coating cavity.
10. The method for preparing the alkali metal layer of the thin film solar cell according to claim 9, wherein an included angle between a central line of the alkali metal source and a reference line is 16-50 degrees, and the reference line is a straight line perpendicular to the bottom of the coating chamber.
11. A coating apparatus for preparing an alkali metal layer of a thin film solar cell by the preparation method according to any one of claims 1 to 10, wherein the coating apparatus comprises an alkali metal source, a first heater and a second heater; the alkali metal source is filled with an alkali metal compound raw material;
the controller is used for controlling the first heater to heat the substrate, enabling the temperature of the substrate to reach a preset temperature threshold value, and controlling the second heater to heat the alkali metal source, so that the heating power of the alkali metal source reaches a first preset power threshold value or the deposition rate of the alkali metal source reaches a first preset deposition rate threshold value.
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