CN111454719A - double perovskite fluoride red luminescent material for white light LED - Google Patents
double perovskite fluoride red luminescent material for white light LED Download PDFInfo
- Publication number
- CN111454719A CN111454719A CN202010465479.1A CN202010465479A CN111454719A CN 111454719 A CN111454719 A CN 111454719A CN 202010465479 A CN202010465479 A CN 202010465479A CN 111454719 A CN111454719 A CN 111454719A
- Authority
- CN
- China
- Prior art keywords
- white light
- luminescent material
- double perovskite
- red
- red luminescent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 title claims abstract description 36
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 title claims abstract description 16
- 239000000203 mixture Substances 0.000 claims abstract description 17
- 150000002500 ions Chemical class 0.000 claims abstract description 8
- 239000000126 substance Substances 0.000 claims abstract description 5
- 239000003822 epoxy resin Substances 0.000 claims description 21
- 229920000647 polyepoxide Polymers 0.000 claims description 21
- 239000003292 glue Substances 0.000 claims description 14
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 10
- 230000005284 excitation Effects 0.000 claims description 6
- 239000000843 powder Substances 0.000 claims description 5
- 238000009877 rendering Methods 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 2
- 239000011159 matrix material Substances 0.000 description 7
- 238000005303 weighing Methods 0.000 description 6
- 238000000295 emission spectrum Methods 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 4
- 238000000695 excitation spectrum Methods 0.000 description 4
- 238000001194 electroluminescence spectrum Methods 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000005090 crystal field Methods 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000004471 energy level splitting Methods 0.000 description 1
- 238000000724 energy-dispersive X-ray spectrum Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 230000007794 irritation Effects 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/62—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing gallium, indium or thallium
- C09K11/626—Halogenides
- C09K11/628—Halogenides with alkali or alkaline earth metals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Luminescent Compositions (AREA)
Abstract
The invention relates to the field of inorganic luminescent materials, and discloses a fluoride Rb prepared from double perovskite 2KGaF6the chemical composition of the double perovskite fluoride red luminescent material is Rb 2KGa1‑xF6:xMn4+X is Mn as doped 4+Ion-opposed Ga 3+Molar percentage coefficient of ion, 0.0 <the red luminescent material is characterized in that the material generates red light emission mainly with the emission wavelength of 628 nm under blue light of 420-470 nm, and has a strong zero phonon vibration peak at the position of 620 nm.
Description
Technical Field
the invention relates to a double perovskite fluoride red luminescent material for white light L ED, in particular to a double perovskite fluoride red luminescent material with a chemical composition of Rb 2KGa1-xF6:xMn4+a fluoride red luminescent material which generates a series of narrow-band red light emission peaks (610-650 nm) under the excitation of blue light (420-470 nm) and is suitable for white light L ED, Belongs to the field of inorganic luminescent material preparation.
Background
compared with other lighting sources (incandescent lamps, halogen tungsten lamps, fluorescent lamps, HID lamps and the like), the white light L ED has the advantages of low use voltage, low energy consumption, strong applicability, high stability, no pollution to the environment and the like, is an energy-saving and environment-friendly green light source, and is the primary choice for developing environment-friendly light sources nowadays with increasing attention paid to environmental protection problems.
Blue light chip composite Y 3Al5O12:Ce3+the white light L ED prepared by the method has high luminous efficiency and good thermal stability, but has the problems of irritation to human eyes, low comfort level and the like, and the inherent expression of high color temperature (A) T c >6000K) And a low color rendering index of ( R a <80). In order to solve the problem, a certain proportion of red fluorescent powder is added into the device to form a 'blue-yellow-red' three-color system to realize warm white light emission, and the aims of reducing color temperature and improving color rendering index can be achieved. Therefore, the development of red light emitting materials that can be excited by blue light is a current research focus.
Mn4+The outermost electron configuration of the ion is 3d 3Energy level splitting can occur in a strong octahedral crystal field environment to generate Mn 4+Of ions d-dTransition, and exhibits broad absorption bands in the ultraviolet and blue regions of the excitation spectrum, respectively, which are respectively assigned to Mn 4+Of ions 4A2g→4T1gAnd 4A2g→4T2gA spin-allowed transition; at the same time, an emission spectrum is generated 2Eg→4A2gthe characteristic is just suitable for white light LED excited by a blue light chip, and if the characteristic can be suitable for the blue light chip, the quality of the white light can be effectively improved 4+There are often differences in luminescence properties among different matrix systems. At present, Mn is suitable 4+Doped radicals Materials are mainly classified into two major classes, oxides and fluorides. When Mn is present 4+In an oxide matrix, the absorption is generally at 300 nm, the emission is generally in the long-wave region after 700 nm, some emission spectra are even outside the human eye sensitivity range, and the color purity of red light is not high Chem. Mater.,2015, 27, 2938.](ii) a In contrast, Mn 4+When in a fluoride matrix, the strongest absorption is generally at 460 nm and the emission is in the range of 600 to 650 nm ACS Appl. Mater. Interfaces, 2017,9, 8805.]therefore, the performance improvement of the white light LED by the red luminescent material taking fluoride as the matrix can be obviously improved.
for this reason, the invention discloses a white LED containing Mn 4+The red luminescent material which is a luminescent center and takes double perovskite fluoride as a matrix has the chemical composition of Rb 2KGa1-xF6:xMn4+the material has excellent light emitting characteristics of wide blue light excitation band and narrow red light emitting peak, and is a red light emitting material suitable for white light L ED.
Disclosure of Invention
the invention aims to provide a white LED light source which is suitable for white LED and uses Mn 4+The red luminescent material takes ions as active centers and double perovskite fluoride as a matrix.
in order to achieve the purpose, the invention relates to a double perovskite fluoride red luminescent material for white light L ED, which has the chemical composition of Rb 2KGa1-xF6:xMn4+X is Mn as doped 4+Ion-opposed Ga 3+Molar percentage coefficient of ion, 0.0 <x ≤ 0.20。
The red luminescent material has strong red light emission under the excitation of blue light with the wavelength of 420-470 nm, and the red light emission is formed by Mn 4+The ion phonon vibration band and the zero phonon vibration peak, wherein the main emission peak is positioned at 628 nm, and the zero phonon vibration peak is positioned at 620 nm. The red luminescent material of the invention and Y are mixed 3Al5O12:Ce3+Yellow fluorescent powder and epoxy resin AB adhesive the white L ED is mixed according to a certain proportion and coated on a blue light GaN chip to prepare warm white L ED with low color temperature and high color rendering index.
Drawings
FIG. 1 is an XRD diffraction pattern of a red luminescent material according to the present invention;
FIG. 2 is an EDS spectrum of the red luminescent material according to the present invention;
FIG. 3 shows the excitation and emission spectra of the red phosphor of the present invention at room temperature;
FIG. 4 shows a red phosphor and Y according to the present invention 3Al5O12:Ce3+mixing yellow fluorescent powder and epoxy resin AB glue according to a certain proportion, and coating the mixture on a blue light GaN chip to prepare a white light L ED device, wherein the white light L ED device has an electroluminescence spectrogram under the working condition of 20 mA;
FIG. 5 is a graph of the electroluminescence spectra of a white light L ED at different currents (20 mA, 60mA, 100mA, 140 mA).
Detailed Description
Example 1:
Respectively weighing 0.03 g of epoxy resin A glue, 0.03 g of epoxy resin B glue and 0.03 g of epoxy resin Y 3Al5O12:Ce3+Yellow phosphor 0.003 g, Rb 2KGa1- xF6:xMn4+0.012 g of red luminescent material was mixed and stirred in a 2.0 ml sample tube to homogenize the mixture. Then, the mixture was coated on a blue GaN chip prepared in advance, and then dried in an oven at 120 ℃ for 2 hours, and finally tested under a current of 20 mA.
Wherein Rb used 2KGa1-xF6:xMn4+The XRD powder diffraction pattern of the red luminescent material is shown in figure 1, and the diffraction peak of the sample and the matrix material Rb 2KGaF6The standard card diffraction peaks of (A) are completely consistent, indicating that the sample has a single crystalline phase.
Rb2KGa1-xF6:xMn4+The EDS energy spectrum of the red luminescent material is shown in figure 2, a sample contains six elements of Rb, K, Ga, Mn, F and Au, wherein Au is caused by gold spraying during sample test, and the rest five elements and Rb 2KGa1-xF6:xMn4+The element types contained in (1) are completely consistent.
Shown in FIG. 3 as Rb 2KGa1-xF6:xMn4+Excitation and emission spectra at room temperature. The strongest absorption peaks of the excitation spectrum are respectively positioned at 358 nm and 462 nm; the emission spectrum consists of several narrow emission peaks of 610-650 nm, where the strongest emission of the phonon vibration band is located at 628 nm and the zero phonon vibration peak is located at 620 nm.
Example 2:
Respectively weighing 0.03 g of epoxy resin A glue, 0.03 g of epoxy resin B glue and 0.03 g of epoxy resin Y 3Al5O12:Ce3+Yellow phosphor 0.003 g, Rb 2KGa1- xF6:xMn4+0.018 g of red luminescent material was mixed and stirred in a 2.0 ml sample tube to homogenize the mixture. Then, the mixture was coated on a blue GaN chip prepared in advance, and then dried in an oven at 120 ℃ for 2 hours, and finally tested under a current of 20 mA.
FIG. 4 is an electroluminescence spectrum of L ED white light LED produced in this embodiment, Rb 2KGa1-xF6:xMn4+the red luminescent material is added into a white L ED luminescent system to ensure the color temperature of white light T c Reduced to 3824K and color rendering index R a the white light L ED is increased to 90.2, and various performance indexes of the white light L ED are optimized.
Example 3:
Respectively weighing 0.03 g of epoxy resin A glue, 0.03 g of epoxy resin B glue and 0.03 g of epoxy resin Y 3Al5O12:Ce3+Yellow phosphor 0.003 g, Rb 2KGa1- xF6:xMn4+0.024 g of red luminescent material was mixed and stirred in a 2.0 ml sample tube to homogenize. Then, the mixture was coated on a blue GaN chip prepared in advance, and then dried in an oven at 120 ℃ for 2 hours, and finally tested under a current of 20 mA.
Example 4:
Respectively weighing 0.03 g of epoxy resin A glue, 0.03 g of epoxy resin B glue and 0.03 g of epoxy resin Y 3Al5O12:Ce3+Yellow phosphor 0.003 g, Rb 2KGa1- xF6:xMn4+0.018 g of red luminescent material was mixed and stirred in a 2.0 ml sample tube to homogenize the mixture. Then, the mixture was coated on a blue GaN chip prepared in advance, and then dried in an oven at 120 ℃ for 2 hours, and finally tested under a current of 60 mA.
Example 5:
Respectively weighing 0.03 g of epoxy resin A glue, 0.03 g of epoxy resin B glue and 0.03 g of epoxy resin Y 3Al5O12:Ce3+Yellow phosphor 0.003 g, Rb 2KGa1- xF6:xMn4+0.018 g of red luminescent material was mixed and stirred in a 2.0 ml sample tube to homogenize the mixture. Then, the mixture was coated on a blue GaN chip prepared in advance, and then dried in an oven at 120 ℃ for 2 hours, and finally tested under a current of 100 mA.
Example 6:
Respectively weighing 0.03 g of epoxy resin A glue, 0.03 g of epoxy resin B glue and 0.03 g of epoxy resin Y 3Al5O12:Ce3+Yellow phosphor 0.003 g, Rb 2KGa1- xF6:xMn4+0.018 g of red luminescent material was mixed and stirred in a 2.0 ml sample tube to homogenize the mixture. Then, the mixture was coated on a blue GaN chip prepared in advance, and then dried in an oven at 120 ℃ for 2 hours, and finally tested under a current of 140 mA.
FIG. 5 is a graph showing electroluminescence spectra of white light L ED prepared in practical examples 2, 4, 5 and 6 at drive currents of 20mA, 60 mA, 100 mA and 140 mA.
Claims (6)
1. A double perovskite fluoride red luminescent material for white light L ED has the chemical composition of Rb 2KGa1-xF6:xMn4+. x is Mn as doped 4+Ion-opposed Ga 3+Molar percentage coefficient of ion, 0.0 <x ≤ 0.20。
2. The method of claim 1 the double perovskite fluoride red luminescent material for white light L ED is characterized in that the adopted host material Rb is 2KGaF6Has a double perovskite structure, and Mn 4+Does not change the double perovskite configuration of the host material.
3. the double perovskite fluoride red luminescent material for the white light L ED as claimed in claim 1, which is characterized in that under the excitation of blue light, a series of narrow-band red light emission peaks with the wavelength of 610-650 nm can be generated.
4. The narrow-band red emission according to claim 3 wherein the four sharp red emission peaks are located at 612nm, 620 nm, 628 nm and 645 nm, respectively, wherein 628 nm is the strongest emission peak and each emission peak has a half-peak width of less than 5 nm.
5. the double perovskite fluoride red phosphor for a white light LED as claimed in claim 1, wherein the red phosphor is mixed with Y 3Al5O12:Ce3+the yellow fluorescent powder and the epoxy resin AB glue are mixed according to a certain proportion and coated on a blue light GaN chip to prepare warm white light L ED.
6. the warm white L ED of claim 5, characterized by a lower color temperature(s) ((s)) T c <4000 K) And a higher color rendering index: ( R a >90）。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010465479.1A CN111454719A (en) | 2020-05-28 | 2020-05-28 | double perovskite fluoride red luminescent material for white light LED |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010465479.1A CN111454719A (en) | 2020-05-28 | 2020-05-28 | double perovskite fluoride red luminescent material for white light LED |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111454719A true CN111454719A (en) | 2020-07-28 |
Family
ID=71678014
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010465479.1A Pending CN111454719A (en) | 2020-05-28 | 2020-05-28 | double perovskite fluoride red luminescent material for white light LED |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111454719A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113201329A (en) * | 2021-04-27 | 2021-08-03 | 云南民族大学 | Perovskite type fluoride luminescent material and preparation method thereof |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104152146A (en) * | 2014-08-15 | 2014-11-19 | 王海容 | Rare earth oxysalt red phosphor and its application |
| CN105038774A (en) * | 2014-05-01 | 2015-11-11 | 通用电气公司 | Process for preparing red-emitting phosphors |
| CN105733572A (en) * | 2016-03-24 | 2016-07-06 | 中山大学 | Red fluoride fluorescent powder as well as preparation method and application thereof |
| CN109135739A (en) * | 2017-06-16 | 2019-01-04 | 隆达电子股份有限公司 | Manganese-doped red fluoride fluorescent powder, light-emitting device and backlight module |
| CN109957400A (en) * | 2017-12-14 | 2019-07-02 | 中国科学院福建物质结构研究所 | A kind of Mn4+The preparation method of ion-activated fluorination matter fluorescent powder |
| CN110713827A (en) * | 2019-10-31 | 2020-01-21 | 云南民族大学 | Mn4+ doped hexafluoride compound red fluorescent powder and synthetic method thereof |
-
2020
- 2020-05-28 CN CN202010465479.1A patent/CN111454719A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105038774A (en) * | 2014-05-01 | 2015-11-11 | 通用电气公司 | Process for preparing red-emitting phosphors |
| CN104152146A (en) * | 2014-08-15 | 2014-11-19 | 王海容 | Rare earth oxysalt red phosphor and its application |
| CN105733572A (en) * | 2016-03-24 | 2016-07-06 | 中山大学 | Red fluoride fluorescent powder as well as preparation method and application thereof |
| CN109135739A (en) * | 2017-06-16 | 2019-01-04 | 隆达电子股份有限公司 | Manganese-doped red fluoride fluorescent powder, light-emitting device and backlight module |
| CN109957400A (en) * | 2017-12-14 | 2019-07-02 | 中国科学院福建物质结构研究所 | A kind of Mn4+The preparation method of ion-activated fluorination matter fluorescent powder |
| CN110713827A (en) * | 2019-10-31 | 2020-01-21 | 云南民族大学 | Mn4+ doped hexafluoride compound red fluorescent powder and synthetic method thereof |
Non-Patent Citations (4)
| Title |
|---|
| SHI DONGXIN 等: ""Communication—Luminescence Properties of a Novel Rb2KGaF6: Mn4+Red-Emitting Phosphorfor Solid-State Lighting"", 《ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY》 * |
| V.NARESH 等: ""KGaP2O7:Mn4+ deep red emitting phosphor: Synthesis, structure, concentration and temperature dependent photoluminescence characteristics"", 《JOURNAL OF LUMINESCENCE》 * |
| 施栋鑫: "" 掺Mn4+氟铝/镓酸盐红光材料的合成、光谱调控与性能增强"", 《云南民族大学硕士论文》 * |
| 齐帅等: "白光LEDs用Mn~(4+)掺杂红色荧光粉的研究进展", 《中国照明电器》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113201329A (en) * | 2021-04-27 | 2021-08-03 | 云南民族大学 | Perovskite type fluoride luminescent material and preparation method thereof |
| CN113201329B (en) * | 2021-04-27 | 2022-07-12 | 云南民族大学 | Perovskite type fluoride luminescent material and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101851508B (en) | Europium activated silicate green fluorescent powder and application thereof in white light emitting diode | |
| CN105331364A (en) | YAG:Mn red phosphor, preparation method and applications thereof | |
| CN112457848A (en) | Narrow-band blue-light fluorescent powder and preparation method and application thereof | |
| CN112094645A (en) | Eu doped2+Blue light fluorescent material, preparation method thereof and white light LED light-emitting device | |
| CN109021973B (en) | Double perovskite type molybdate red fluorescent powder and preparation method thereof | |
| CN113201342A (en) | Ce3+Activated silicate broadband green fluorescent powder and preparation method and application thereof | |
| KR20090043533A (en) | Silicon-containing phosphor for led, its preparation and the light emitting devices using the same | |
| CN103031125A (en) | Niobate or tantalite fluorescent material for white LED (Light-Emitting Diode), and preparation method of niobate or tantalite fluorescent material | |
| CN107603622A (en) | Vanadate luminescent material and preparation method thereof | |
| CN109957403A (en) | A kind of Eu3+Activate fluoboric acid strontium barium red fluorescence powder and its preparation and application | |
| CN105778904B (en) | A kind of gallium aluminium hydrochlorate base fluorescent material and preparation method thereof | |
| CN107987828A (en) | A kind of mayenite structure fluorescent powder of LED white light emissions | |
| CN111454719A (en) | double perovskite fluoride red luminescent material for white light LED | |
| CN109957402B (en) | Trivalent europium ion activated red-emitting fluorescent powder and preparation and application thereof | |
| CN110003901B (en) | Eu (Eu)3+And Ti4+Ion-codoped niobium tantalate red fluorescent powder, and preparation method and application thereof | |
| CN108822842B (en) | Red strontium magnesium phosphate fluorescent material and preparation method and application thereof | |
| CN111187622A (en) | Single-matrix phosphate fluorescent powder for white light LED and preparation method thereof | |
| CN114574206B (en) | Fluorescent powder for white light-emitting diode and synthesis method and application thereof | |
| CN103602335B (en) | Blue fluorescent powder for white light LED and preparation method thereof | |
| CN107163943B (en) | Spectrum-adjustable fluorescent powder suitable for near ultraviolet excitation and preparation method thereof | |
| CN112063381A (en) | Mn4+ ion activated perovskite fluoride red light material | |
| CN112694890A (en) | Tetravalent manganese ion doped red fluorescent material and preparation method and application thereof | |
| CN112094644A (en) | Ultraviolet excited Eu (II) ion single-doped single-phase full-spectrum fluorescent powder and preparation and application thereof | |
| CN105524615A (en) | Niobate red phosphor for white-light LEDs and preparation method thereof | |
| CN110055066A (en) | A kind of red fluorescence powder and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20200728 |
|
| RJ01 | Rejection of invention patent application after publication |