CN111444038B - Real-time detection method and detection device for reliability of flash memory and storage system - Google Patents
Real-time detection method and detection device for reliability of flash memory and storage system Download PDFInfo
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- CN111444038B CN111444038B CN202010232892.3A CN202010232892A CN111444038B CN 111444038 B CN111444038 B CN 111444038B CN 202010232892 A CN202010232892 A CN 202010232892A CN 111444038 B CN111444038 B CN 111444038B
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- G06—COMPUTING; CALCULATING OR COUNTING
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- G06F11/00—Error detection; Error correction; Monitoring
- G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
- G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
- G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
- G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
- G06F11/1044—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices with specific ECC/EDC distribution
Abstract
The invention discloses a real-time detection method, detection equipment and a storage system for the reliability of a flash memory, which belong to the technical field of storage and comprise the following steps: determining the data type most sensitive to the detected error type, and taking the data of the type as target data; reading the target data in real time to obtain the error severity of the target data, and if the error severity of the target data exceeds the error correction capability of the flash memory, judging that the flash memory is unreliable; otherwise, the flash memory is judged to be reliable. If the detected error is a read interference error, the data type most sensitive to the read interference error is the data type with the lowest threshold voltage of the flash memory storage unit; if the detected error is a data retention error, the data type most sensitive to the data retention error is the data type with the highest threshold voltage of the flash memory cell. The invention can fully utilize the storage characteristics of the flash memory and accurately complete the detection of the reliability of the flash memory in real time.
Description
Technical Field
The invention belongs to the technical field of storage, and particularly relates to a real-time detection method, detection equipment and a storage system for the reliability of a flash memory.
Background
Flash memory is a non-volatile memory, i.e. data is not lost in case of power failure. The flash memory takes a flash memory as a storage medium, and reads and writes data to a chip layer of interconnected flash memory chips during working, two most important components of the flash memory are a flash memory controller and the flash memory chips, as shown in fig. 1, the flash memory controller manages the data stored in the flash memory chips, and the safety and normal reading of the data are ensured. The flash memory has gradually replaced other semiconductor memories and is widely used by virtue of the advantages of nonvolatility, high read-write speed, large storage capacity, low power consumption, good shock resistance and the like.
Due to the characteristics of the flash memory, various types of errors occur during the use of the flash memory, wherein read disturb errors and data retention errors are the most serious, and when the error severity exceeds the error correction capability of the flash memory, the integrity of user data is damaged, and more serious, data loss in the flash memory may also be caused, which may cause great loss to users. Therefore, the severity of the errors can be accurately detected in real time, the resistance of the medium to the errors can be fully excavated, and the reliability of the current flash memory can be reflected, so that the method has extremely important significance for timely adopting a corresponding error processing mechanism, and improving the performance and the service life of a system.
In the current flash memory, a detection method for read interference errors and data retention errors is very conservative, in order to reduce system detection overhead, in the whole life cycle of the flash memory, a fixed read threshold value is used for detecting the read interference errors, namely a read counting variable is maintained, and when the read times exceed the fixed read threshold value, the severity of the read interference errors at the moment is judged to cause user data damage; for data retention errors, a fixed time period is used for detection, that is, a time interval variable is maintained, and when the time interval exceeds the fixed time period, the severity of the data retention errors at the moment is judged to cause the user data to be damaged. However, in the whole life cycle of the flash memory, because of the wear of the flash memory medium, the resistance of the medium to the read interference error and the data retention error is gradually reduced, and it is ensured that the data is not damaged in the whole life cycle, the set fixed value is the minimum value corresponding to the end of the life cycle, and by such a method, in the early and middle stages of the life cycle of the flash memory, the set fixed value is far smaller than the value which the medium can bear, the detection accuracy is very low, the reliability of the memory cannot be accurately reflected, and meanwhile, the error processing overhead of the system is greatly increased, so that the system performance is reduced, and the service life of the flash memory is shortened.
Disclosure of Invention
In view of the defects and the improvement requirements of the prior art, the invention provides a real-time detection method, a detection device and a storage system for the reliability of a flash memory, and aims to improve the accuracy of the reliability detection of the flash memory.
To achieve the above object, according to a first aspect of the present invention, there is provided a method for real-time detecting reliability of a flash memory, including:
determining the data type most sensitive to the detected error type, and taking the data of the type as target data;
reading the target data in real time to obtain the error severity of the target data, and if the error severity of the target data exceeds the error correction capability of the flash memory, judging that the flash memory is unreliable; otherwise, the flash memory is judged to be reliable.
The invention detects the severity of the error of the data which is most sensitive to the error in real time aiming at the type of the detected error based on the storage characteristic of the flash memory, compares the severity with the error correction capability of the flash memory and judges the reliability of the flash memory according to the comparison result.
Compared with the traditional detection method, the reliability detection standard of the whole life cycle of the flash memory is formulated according to the error resistance at the end of the life cycle of the flash memory, the method completes the detection of the reliability of the flash memory based on the real-time error resistance of the flash memory, can effectively reduce the times of executing error processing measures in the early and middle stages of the life cycle of the flash memory, and can effectively reduce the erasing times of the flash memory so as to reduce the abrasion of a flash memory storage medium and prolong the service life of the flash memory because data needs to be reprogrammed to a new physical address in order to avoid the loss of user data when the unreliable flash memory is detected.
Further, the detected error type is a read disturb error, and the data type most sensitive to the read disturb error is the data type with the lowest threshold voltage of the flash memory cell.
With the difference of the number of electrons in the gate of the flash memory cell, the threshold voltage of the flash memory cell is distributed in different voltage intervals corresponding to different states of the flash memory cell, and the flash memory realizes the storage of different types of data by using different states of the flash memory cell.
When the reading operation causes electrons to increase in the gate of the memory cell, so that the memory cell changes from one state to another state, a read disturb error occurs; when the threshold voltage of the flash memory storage unit is the lowest, the number of electrons in the grid electrode of the flash memory storage unit is the least, and the read interference error is most likely to occur; the invention determines the data type with the lowest threshold voltage of the flash memory storage unit as the data type which is most sensitive to the read interference error based on a mechanism generated by the read interference error, and can accurately acquire the real-time resistance of the flash memory to the read interference error.
Further, the real-time reading of the target data is performed by: and reading the target data according to a preset reading time interval.
Because the most direct reason for the generation of the read interference error is the influence of the read operation, the method and the device read the target data at intervals of the preset read times and detect the target data, and can acquire the accumulated influence of the read operation on the severity of the error generated by the target data in real time.
Further, the detected error type is a data retention error, and the data type most sensitive to the data retention error is the data type with the highest threshold voltage of the flash memory cell.
Under the condition of no operation, electrons in the grid electrode of the flash memory storage unit can be gradually lost, and when the electron loss causes the storage unit to be changed from one state to another state, a data retention error occurs; the threshold voltage of the flash memory storage unit is highest, the number of electrons in the grid electrode of the flash memory storage unit is the largest, and data retention errors are easy to occur; the invention determines the data type with the highest threshold voltage of the flash memory storage unit as the data type which is most sensitive to the data retention error based on the mechanism generated by the data retention error, and can accurately acquire the real-time resistance of the flash memory to the data retention error.
Further, the real-time reading of the target data is performed by: and reading the target data according to a preset time interval.
Since the most direct cause of the data retention error is the time lapse, the present invention reads and detects the target data at preset time intervals, and can acquire the cumulative influence of the severity of the error caused by the time lapse on the target data in real time.
Further, the original Bit Error Rate (Raw Bit Error Rate, RBER) is used to measure the severity of errors occurring in the target data.
The invention can measure the error severity of the target data by the original bit error rate, simplify the calculation and improve the real-time property of the reliability detection.
Further, the method for detecting reliability of a flash memory in real time according to the first aspect of the present invention further includes:
if the flash memory is judged to be unreliable, the data stored in the flash memory is programmed to a new physical position so as to ensure the reliability of the flash memory.
According to a second aspect of the present invention, there is provided a real-time detection apparatus for reliability of a flash memory, comprising: the device comprises an error characteristic analysis module, an error detection module and a judgment module;
the error characteristic analysis module is used for determining the data type most sensitive to the detected error type and taking the data as target data;
the error detection module is used for reading the target data in real time according to the target data determined by the error characteristic analysis module so as to obtain the error severity of the target data, and triggering the judgment module after obtaining the error severity of the target data;
the judgment module is used for judging that the flash memory is unreliable when the severity of the error of the target data acquired by the error detection module exceeds the error correction capability of the flash memory, and judging that the flash memory is reliable when the severity of the error of the target data acquired by the error detection module does not exceed the error correction capability of the flash memory.
According to a third aspect of the present invention, there is provided a storage system comprising: the invention also provides a real-time detection device for the reliability of the flash memory.
Generally speaking, by the technical scheme of the invention, based on the storage characteristics of the flash memory, the severity of the error of the type of data most sensitive to the type of error is detected in real time aiming at the type of the detected error, and the reliability of the flash memory is judged according to the comparison result by comparing the severity with the error correction capability of the flash memory, so that on one hand, the reliability of the flash memory can be accurately detected in real time by fully utilizing the storage characteristics of the flash memory; on the other hand, the method can effectively reduce the times of executing error handling measures in the early and middle periods of the life cycle of the flash memory, thereby reducing the abrasion of the flash memory storage medium and prolonging the service life of the flash memory.
Drawings
Fig. 1 is a general structure diagram of a conventional flash memory;
FIG. 2 is a schematic diagram of a read disturb error and a data retention error according to an embodiment of the present invention;
FIG. 3 is a flowchart of a method for real-time reliability detection of a flash memory according to an embodiment of the present invention;
FIG. 4 is a flowchart of a method for detecting a read disturb error according to an embodiment of the present invention;
fig. 5 is a flowchart of a method for detecting a data retention error according to an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention. In addition, the technical features involved in the embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
Before explaining the technical scheme of the present invention in detail, the error mechanism in the flash memory is briefly described as follows:
with the difference of the number of electrons in the grid of the flash memory storage unit, the threshold voltage of the storage unit can be distributed in different voltage intervals to correspond to different storage unit states, and the flash memory realizes the storage of different types of data by using different storage unit states; take TLC (Trinary-Level Cell) flash memory as an example, wherein one memory Cell is used for storing 3 bits, and accordingly, one TLC flash memory Cell has 2 memory cells3As shown in fig. 2, the threshold voltage corresponds to a value that is different for different manufacturers depending on the setting of each flash memory manufacturer.
Read disturb errors and data retention errors are among the most serious of the types of errors in flash memory.
When the reading operation causes electrons to increase in the gate of the memory cell, so that the memory cell changes from one state to another state, a read disturb error occurs; when the threshold voltage of the flash memory storage unit is the lowest, the number of electrons in the grid electrode of the flash memory storage unit is the least, and the read interference error is most likely to occur; in fig. 2, the data type having the lowest threshold voltage is "111".
Under the condition of no operation, electrons in the grid electrode of the flash memory storage unit can be gradually lost, and when the electron loss causes the storage unit to be changed from one state to another state, a data retention error occurs; the threshold voltage of the flash memory storage unit is highest, the number of electrons in the grid electrode of the flash memory storage unit is the largest, and data retention errors are easy to occur; in fig. 2, the data type having the highest threshold voltage is "110".
Without loss of generality, for convenience of description, the following embodiments all take a flash memory including the flash memory shown in fig. 2 as a detection object.
In order to improve the accuracy of detecting the reliability of the flash memory, the method for detecting the reliability of the flash memory in real time provided by the invention, as shown in fig. 3, comprises the following steps:
determining the data type most sensitive to the detected error type, and taking the data of the type as target data;
reading the target data in real time to obtain the error severity of the target data, and if the error severity of the target data exceeds the error correction capability of the flash memory, judging that the flash memory is unreliable, and at the moment, damaging the user data; otherwise, the flash memory is judged to be reliable, and at the moment, the user data cannot be damaged.
In an embodiment of the present invention, the detected error type is a read disturb error, and the data type most sensitive to the read disturb error is the data type with the lowest threshold voltage of the flash memory cell, and the target data is read at preset read time intervals, and accordingly, the real-time detection method for the reliability of the flash memory, as shown in fig. 4, includes:
determining the data type with the lowest threshold voltage of the flash memory storage unit as the data type which is most sensitive to the read interference error, namely '111' in fig. 2, and taking the data as target data;
reading the target data at intervals according to preset reading times so as to obtain the error severity of the target data in real time, and if the error severity of the target data exceeds the error correction capability of the flash memory, judging that the flash memory is unreliable, and at the moment, damaging the user data; otherwise, the flash memory is judged to be reliable, and at the moment, the user data cannot be damaged.
In this embodiment, the read frequency interval needs to be determined according to the read interference error characteristic of the flash memory and the error correction capability of the ECC, so as to ensure that the error rate of the flash memory increased by the read interference is very small in the set read frequency interval, for example, two orders of magnitude lower than the ECC error correction rate of the solid-state disk, so that the interval reading can be realized while the real-time performance is ensured, and the detection overhead is reduced; the setting of the read time interval needs to balance two aspects of performance and detection precision, and the smaller the set interval value is, the higher the detection frequency is, the greater the influence on the performance of the system is, but the higher the real-time detection precision is.
In another embodiment of the present invention, the detected error type is a data retention error, and the data type most sensitive to the data retention error is the data type with the highest threshold voltage of the flash memory cell, and the target data is read at preset time intervals, and accordingly, the real-time detection method for the reliability of the flash memory, as shown in fig. 5, includes:
determining the data type with the lowest threshold voltage of the flash memory storage unit as the data type which is most sensitive to the read disturbance error, namely '110' in fig. 2, and taking the data as target data;
reading target data according to a preset time interval to obtain the severity of the error of the target data in real time, and if the severity of the error of the target data exceeds the error correction capability of the flash memory, judging that the flash memory is unreliable, and at the moment, damaging user data; otherwise, the flash memory is judged to be reliable, and at the moment, the user data cannot be damaged.
In this embodiment, the time interval needs to be determined according to the data retention error characteristic of the flash memory and the error correction capability of the ECC, and it needs to be ensured that the error rate of the flash memory increased due to data retention is very small in the set time interval, for example, two orders of magnitude lower than the ECC error correction rate of the solid-state disk, so that while the real-time performance is ensured, the interval reading can be realized, and the detection overhead is reduced; the time interval needs to be set in a balanced manner between the performance and the detection precision, and the smaller the set interval value is, the higher the detection frequency is, the greater the influence on the performance of the system is, but the higher the real-time detection precision is.
Optionally, in the above embodiment, the original bit error rate is used to measure the severity of the error occurring in the target data; the ECC engine (namely the error management module in FIG. 1) arranged in the flash memory can provide the original bit error rate of the data while performing error detection and correction, and the invention can measure the error severity of the target data by using the original bit error rate, simplify calculation and improve the real-time performance of reliability detection.
In order to further prevent the user data from being lost and ensure the reliability of the flash memory, in the above embodiment, the method may further include:
if the flash memory is judged to be unreliable, the data stored in the flash memory is programmed to a new physical position so as to ensure the reliability of the flash memory.
It should be noted that other encoding methods for encoding different threshold voltages of the memory cells into different data types, and other types of flash memory storage media, are also applicable to the present invention; the invention is equally applicable to other error types.
The invention also provides a real-time detection device for the reliability of the flash memory, which comprises: the device comprises an error characteristic analysis module, an error detection module and a judgment module;
the error characteristic analysis module is used for determining the data type most sensitive to the detected error type and taking the data as target data;
the error detection module is used for reading the target data in real time according to the target data determined by the error characteristic analysis module so as to obtain the error severity of the target data, and triggering the judgment module after obtaining the error severity of the target data;
the judgment module is used for judging that the flash memory is unreliable when the severity of the error of the target data acquired by the error detection module exceeds the error correction capability of the flash memory, and judging that the flash memory is reliable when the severity of the error of the target data acquired by the error detection module does not exceed the error correction capability of the flash memory;
in this embodiment, the detailed implementation of each module may refer to the description of the method embodiment described above, and will not be repeated here.
The present invention also provides a storage system comprising: flash memory and real-time detection equipment of the reliability of the flash memory.
It will be understood by those skilled in the art that the foregoing is only a preferred embodiment of the present invention, and is not intended to limit the invention, and that any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the scope of the present invention.
Claims (7)
1. A real-time detection method for reliability of a flash memory is characterized by comprising the following steps:
determining the data type most sensitive to the detected error type, and taking the data of the type as target data; the detected error type is a read interference error or a data retention error, the data type most sensitive to the read interference error is the data type with the lowest threshold voltage of the flash memory storage unit, and the data type most sensitive to the data retention error is the data type with the highest threshold voltage of the flash memory storage unit;
reading the target data in real time to obtain the error severity of the target data, and if the error severity of the target data exceeds the error correction capability of the flash memory, judging that the flash memory is unreliable; otherwise, the flash memory is judged to be reliable.
2. The method as claimed in claim 1, wherein when the detected error type is a read disturb error, the target data is read in real time by: and reading the target data once every preset reading times.
3. The method as claimed in claim 1, wherein when the detected error type is a data retention error, the target data is read in real time by: and reading the target data according to a preset time interval.
4. A method as claimed in any one of claims 1 to 3, wherein the severity of the error in the target data is measured by the raw bit error rate.
5. A method for real-time detection of reliability of a flash memory according to any of claims 1-3, further comprising:
and if the flash memory is judged to be unreliable, programming the data stored in the flash memory to a new physical position so as to ensure the reliability of the flash memory.
6. A real-time detection device for the reliability of a flash memory, comprising: the device comprises an error characteristic analysis module, an error detection module and a judgment module;
the error characteristic analysis module is used for determining the data type most sensitive to the detected error type and taking the data as target data; the detected error type is a read interference error or a data retention error, the data type most sensitive to the read interference error is the data type with the lowest threshold voltage of the flash memory storage unit, and the data type most sensitive to the data retention error is the data type with the highest threshold voltage of the flash memory storage unit;
the error detection module is used for reading the target data in real time according to the target data determined by the error characteristic analysis module to obtain the severity of the error of the target data, and triggering the judgment module after obtaining the severity of the error of the target data;
the judgment module is used for judging that the flash memory is unreliable when the severity of the error of the target data acquired by the error detection module exceeds the error correction capability of the flash memory, and judging that the flash memory is reliable when the severity of the error of the target data acquired by the error detection module does not exceed the error correction capability of the flash memory.
7. A storage system, comprising: flash memory and a device for real-time detection of the reliability of a flash memory as claimed in claim 6.
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