CN111443579A - Exposure machine, preparation method and use method thereof - Google Patents
Exposure machine, preparation method and use method thereof Download PDFInfo
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- CN111443579A CN111443579A CN202010353315.XA CN202010353315A CN111443579A CN 111443579 A CN111443579 A CN 111443579A CN 202010353315 A CN202010353315 A CN 202010353315A CN 111443579 A CN111443579 A CN 111443579A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
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Abstract
The invention provides an exposure machine, a preparation method and a using method thereof. The exposure machine comprises a first baffle and a second baffle which are positioned on the same plane, the first baffle and the second baffle correspond to a shading area of the exposure machine, and an area between the first baffle and the second baffle corresponds to an exposure area of the exposure machine; and light absorption layers are arranged on the side surfaces, close to the exposure area, of the first baffle and the second baffle, and the maximum forbidden band width of the light absorption layer materials is 2.8 eV. The light absorption layer is additionally arranged on the side surface of the baffle plate close to the exposure area, so that stray light at the edge of the baffle plate can be effectively absorbed, the diffuse reflection phenomenon at the edge of the baffle plate is weakened, and the exposure precision is improved.
Description
Technical Field
The invention relates to the technical field of display, in particular to an exposure machine, a preparation method and a use method thereof.
Background
At present, the baffle in the exposure machine is used for shielding an area which does not need to be exposed except for an exposure area, and the position of the baffle can be adjusted according to the typesetting of a panel and the area which needs to be exposed, so that the purpose of exposing partial areas is achieved.
Because exposure light is when shining the exposure downwards, there are some stray light at the baffle edge, and diffuse reflection can take place for stray light to make actual exposure figure distortion, the baffle precision of current canon exposure machine is 1mm, and is lower relatively, to the panel of closely arranging, is difficult to realize accurate exposure, can lead to actual exposure's figure distortion. Therefore, it is necessary to improve this defect.
Disclosure of Invention
The embodiment of the invention provides an exposure machine, which is used for solving the technical problem of actual exposure pattern distortion caused by diffuse reflection of stray light at the edge of a baffle plate of the exposure machine in the prior art.
The embodiment of the invention provides an exposure machine, which comprises a first baffle and a second baffle which are positioned on the same plane, wherein the first baffle and the second baffle correspond to a shading area of the exposure machine, and an area between the first baffle and the second baffle corresponds to an exposure area of the exposure machine; and light absorption layers are arranged on the side surfaces, close to the exposure area, of the first baffle and the second baffle, and the maximum forbidden band width of the light absorption layer materials is 2.8 eV.
Further, the light absorption layer is made of cadmium selenide, cadmium sulfide or gallium phosphide.
Further, the light absorbing layer has a thickness ranging from 0.1 to 1 micron.
The embodiment of the invention provides a preparation method of an exposure machine, which comprises the following steps: providing a first baffle plate and a second baffle plate, wherein the first baffle plate and the second baffle plate are positioned on the same plane, the first baffle plate and the second baffle plate correspond to a shading area of the exposure machine, and an area between the first baffle plate and the second baffle plate corresponds to an exposure area of the exposure machine; and preparing light absorption layers on the side surfaces, close to the exposure area, of the first baffle and the second baffle, wherein the maximum forbidden band width of the light absorption layer materials is 2.8 eV.
Further, the method for preparing the light absorbing layer is ion implantation or electroplating.
Further, the light absorption layer is made of cadmium selenide, cadmium sulfide or gallium phosphide.
Further, the light absorbing layer has a thickness ranging from 0.1 to 1 micron.
The embodiment of the invention provides a using method of the exposure machine, which comprises the following steps: providing a glass substrate; coating a photoresist on the glass substrate; aligning the exposure machine with the glass substrate; and irradiating the glass substrate with exposure light.
Further, the step of aligning the exposure machine with the glass substrate specifically includes: and aligning the area of the glass substrate, which needs to retain the light resistance, with the shading area of the exposure machine, and aligning the area of the glass substrate, which needs to remove the light resistance, with the exposure area of the exposure machine.
Further, the wavelength of the exposure light is 365 nm, 405 nm and 436 nm.
Has the advantages that: according to the exposure machine provided by the embodiment of the invention, the light absorption layer is additionally arranged on the side surface of the baffle plate close to the exposure area, so that stray light at the edge of the baffle plate can be effectively absorbed, the diffuse reflection phenomenon at the edge of the baffle plate is weakened, and the exposure precision is improved.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a schematic diagram of a basic structure of an exposure machine according to an embodiment of the present invention.
Fig. 2 is a flowchart of a manufacturing method of the exposure machine according to the embodiment of the invention.
Fig. 3 is a flowchart of a method for using an exposure machine according to an embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
As shown in fig. 1, a basic structure diagram of an exposure machine according to an embodiment of the present invention is provided, in which components of the present invention and relative position relationships between the components can be seen visually, the exposure machine includes a first barrier 101 and a second barrier 102 located on the same plane, the first barrier 101 and the second barrier 102 correspond to a light-shielding area a1 of the exposure machine, and an area between the first barrier 101 and the second barrier 102 corresponds to an exposure area a2 of the exposure machine; wherein, the first baffle 101 and the second baffle 102 are provided with a light absorption layer 103 on the side near the exposure area a2, and the maximum energy gap width of the light absorption layer 103 material is 2.8 eV.
Specifically, the exposure machine is used for performing an exposure process on the glass substrate, and specifically, a photoresist is coated on the surface of the glass substrate, then the light shielding area a1 of the exposure machine is aligned with the area of the glass substrate where the photoresist needs to be retained, and the exposure area a2 of the exposure machine is aligned with the area of the glass substrate where the photoresist needs to be removed, so that partial area exposure can be achieved. After the alignment is completed, the first blocking plate 101, the second blocking plate 102, and the area between the first blocking plate 101 and the second blocking plate 102, i.e. the exposure area a2 of the exposure machine, are vertically irradiated downwards by using exposure light, wherein when the exposure light passes through the exposure area a2, photons passing through the side of the first blocking plate 101 and the second blocking plate 102 close to the exposure area a2 radiate energy in all directions, so that diffuse reflection is generated at the side of the first blocking plate 101 and the second blocking plate 102 close to the exposure area a2, which may affect the actual size of the exposure pattern, whereas the embodiment of the present invention effectively absorbs stray light at the side of the first blocking plate 101 and the second blocking plate 102 close to the exposure area a2 by providing the light absorbing layer 103 at the side of the first blocking plate 101 and the second blocking plate 102 close to the exposure area a2, thereby reducing the diffuse reflection phenomenon of the sides of the first shutter 101 and the second shutter 102 near the exposure area a2 and improving the exposure accuracy.
The exposure light includes light having a wavelength of 365 nm, light having a wavelength of 405 nm, and light having a wavelength of 436 nm.
Note that the principle of the light absorbing layer 103 material absorbing stray light from the side of the first and second blocking plates 101 and 102 close to the exposure area a2 is as follows: because different substances have different molecular compositions and molecular structures, the characteristic energy levels are different, the energy level difference is different, and each substance can only absorb light radiation equivalent to the energy level difference inside the molecule, so that different substances have selectivity on the absorption of light with different wavelengths. I.e., the light absorbing layer 103 material, needs to be selected with consideration of the material that absorbs all of the exposure light.
The absorption boundary λ (wavelength/nm) of the material of the light absorbing layer 103 is 1240(hc/h is planck constant, and c is light speed)/forbidden bandwidth (Eg). I.e., the larger the forbidden band width (Eg), the smaller the absorption boundary of the light absorbing layer 103 material. That is, the larger the forbidden band width (Eg), the poorer the ability of the light absorbing layer 103 material to absorb light, and the poorer the effect. The embodiment of the present invention meets the requirement of absorbing all the exposure light by defining the maximum forbidden band width of the material of the light absorbing layer 103 to be 2.8eV, that is, the minimum absorption boundary of the material of the light absorbing layer 103 is 442 nm (λ 1240/2.8 is 442>436 nm).
In one embodiment, the light absorbing layer 103 material is cadmium selenide, or cadmium sulfide, or gallium phosphide.
Specifically, when the light absorbing layer 103 is made of cadmium selenide, its forbidden band width (Eg) is 1.7eV, so its absorption boundary λ is 729 nm, i.e. light with a wavelength less than 729 nm can be absorbed by the cadmium selenide, i.e. absorption of all exposure light can be realized.
Specifically, when the light absorbing layer 103 is made of cadmium sulfide, its forbidden band width (Eg) is 2.4eV, so its absorption boundary λ is 516 nm, i.e. light with a wavelength less than 516 nm can be absorbed by the cadmium sulfide, i.e. absorption of all exposure light can be realized.
Specifically, when the light absorbing layer 103 is made of gallium phosphide, its forbidden band width (Eg) is 2.25eV, so its absorption boundary λ is 551 nm, i.e. light with a wavelength less than 551 nm can be absorbed by the gallium phosphide, i.e. absorption of all exposure light can be realized.
In one embodiment, the light absorbing layer 103 has a thickness in a range from 0.1 microns to 1 micron.
In one embodiment, the size of the light absorbing layer 103 corresponds to the size of the side of the first and second shutters 101 and 102 near the exposure area a 2.
As shown in fig. 2, a flowchart of a method for manufacturing an exposure machine according to an embodiment of the present invention includes:
s201, providing a first baffle and a second baffle, wherein the first baffle and the second baffle are positioned on the same plane, the first baffle and the second baffle correspond to a shading area of the exposure machine, and an area between the first baffle and the second baffle corresponds to an exposure area of the exposure machine; and
s202, preparing light absorption layers on the side faces, close to the exposure area, of the first baffle and the second baffle, wherein the maximum forbidden band width of the light absorption layer materials is 2.8 eV.
It should be noted that the exposure machine is used for performing an exposure process on a glass substrate, and specifically, a photoresist is coated on the surface of the glass substrate, then a light-shielding region of the exposure machine is aligned with a region of the glass substrate where the photoresist needs to be retained, and an exposure region of the exposure machine is aligned with a region of the glass substrate where the photoresist needs to be removed, so that partial region exposure can be achieved. After alignment is completed, exposure light is used for vertically and downwards irradiating the first baffle plate, the second baffle plate and a region between the first baffle plate and the second baffle plate, namely an exposure region of the exposure machine, wherein when the exposure light passes through the exposure region, photons passing through the side surfaces, close to the exposure region, of the first baffle plate and the second baffle plate can radiate energy in all directions, so that diffuse reflection is generated on the side surfaces, close to the exposure region, of the first baffle plate and the second baffle plate, and the actual size of an exposure pattern can be influenced, while in the embodiment of the invention, light absorbing layers are prepared on the side surfaces, close to the exposure region, of the first baffle plate and the second baffle plate, so that stray light on the side surfaces, close to the exposure region, of the first baffle plate and the second baffle plate can be effectively absorbed, and the diffuse reflection phenomenon of the side surfaces, close to the exposure region, of the first baffle plate and the second baffle plate can be reduced, the exposure accuracy is improved.
The exposure light includes light having a wavelength of 365 nm, light having a wavelength of 405 nm, and light having a wavelength of 436 nm.
Note that the principle of the light absorbing layer material absorbing stray light of the first and second blocking plates near the side of the exposure region is as follows: because different substances have different molecular compositions and molecular structures, the characteristic energy levels are different, the energy level difference is different, and each substance can only absorb light radiation equivalent to the energy level difference inside the molecule, so that different substances have selectivity on the absorption of light with different wavelengths. I.e. the choice of the light absorbing layer material, needs to take into account the material that absorbs all of the exposure light.
The absorption boundary λ (wavelength/nm) of the light absorption layer material is 1240(hc/h is planck constant, and c is the light speed)/forbidden bandwidth (Eg). I.e., the larger the forbidden band width (Eg), the smaller the absorption boundary of the light-absorbing layer material. That is, the larger the forbidden band width (Eg), the poorer the ability of the light-absorbing layer material to absorb light, and the poorer the effect. The embodiment of the invention meets the requirement of completely absorbing the exposure light by limiting the maximum forbidden band width of the light absorption layer material to be 2.8eV, that is, the minimum absorption boundary of the light absorption layer material is 442 nm (λ 1240/2.8 442>436 nm).
In one embodiment, the light absorbing layer material is cadmium selenide, or cadmium sulfide, or gallium phosphide.
Specifically, when the light absorbing layer is made of cadmium selenide, the forbidden band width (Eg) is 1.7eV, so the absorption boundary λ is 729 nm, that is, light with a wavelength less than 729 nm can be absorbed by the cadmium selenide, that is, absorption of all exposure light can be realized.
Specifically, when the light absorption layer is made of cadmium sulfide, the forbidden band width (Eg) is 2.4eV, so the absorption boundary λ is 516 nm, that is, light with a wavelength less than 516 nm can be absorbed by the cadmium sulfide, that is, absorption of all exposure light can be realized.
Specifically, when the light-absorbing layer is made of gallium phosphide, the forbidden band width (Eg) is 2.25eV, so the absorption boundary λ is 551 nm, that is, light with a wavelength less than 551 nm can be absorbed by the gallium phosphide, that is, absorption of all exposure light can be realized.
In one embodiment, the method of preparing the light absorbing layer is ion implantation or electroplating.
It should be noted that the ion implantation refers to directing the ion beam to the side of the first and second shutter plates near the exposure region, and when the ion beam is resisted by the side of the first and second shutter plates near the exposure region, the ion beam is slowly reduced in speed and finally stays on the side of the first and second shutter plates near the exposure region.
Note that electroplating refers to plating the light absorbing layer material on the side surfaces of the first barrier and the second barrier near the exposure region by using an electrolytic principle.
In one embodiment, the light absorbing layer has a thickness in a range of 0.1 to 1 micron.
As shown in fig. 3, a flowchart of a method for using an exposure machine according to an embodiment of the present invention includes:
s301, providing a glass substrate;
s302, coating a photoresist on the glass substrate;
s303, aligning the exposure machine with the glass substrate; and
and S304, irradiating the glass substrate by using exposure light.
It should be noted that the exposure machine includes a first baffle and a second baffle which are located on the same plane, the first baffle and the second baffle correspond to the light-shielding area of the exposure machine, and the area between the first baffle and the second baffle corresponds to the exposure area of the exposure machine; and light absorption layers are arranged on the side surfaces, close to the exposure area, of the first baffle and the second baffle, and the maximum forbidden band width of the light absorption layer materials is 2.8 eV.
The step of aligning the exposure machine with the glass substrate specifically includes: and aligning the area of the glass substrate, which needs to retain the light resistance, with the shading area of the exposure machine, and aligning the area of the glass substrate, which needs to remove the light resistance, with the exposure area of the exposure machine.
After the alignment is completed, the step of irradiating the glass substrate with exposure light specifically includes: the first shutter, the second shutter, and a region between the first shutter and the second shutter, i.e., an exposure region of the exposure machine, are irradiated vertically downward with exposure light. When the exposure light passes through the exposure area, photons passing through the side surfaces of the first baffle and the second baffle close to the exposure area radiate energy in all directions, so that diffuse reflection is generated on the side surfaces of the first baffle and the second baffle close to the exposure area, and the actual size of an exposure pattern is influenced.
The wavelengths of the exposure light are 365 nm, 405 nm, and 436 nm.
Note that the principle of the light absorbing layer material absorbing stray light of the first and second blocking plates near the side of the exposure region is as follows: because different substances have different molecular compositions and molecular structures, the characteristic energy levels are different, the energy level difference is different, and each substance can only absorb light radiation equivalent to the energy level difference inside the molecule, so that different substances have selectivity on the absorption of light with different wavelengths. I.e. the choice of the light absorbing layer material, needs to take into account the material that absorbs all of the exposure light.
The absorption boundary λ (wavelength/nm) of the light absorption layer material is 1240(hc/h is planck constant, and c is the light speed)/forbidden bandwidth (Eg). I.e., the larger the forbidden band width (Eg), the smaller the absorption boundary of the light-absorbing layer material. That is, the larger the forbidden band width (Eg), the poorer the ability of the light-absorbing layer material to absorb light, and the poorer the effect. The embodiment of the invention meets the requirement of completely absorbing the exposure light by limiting the maximum forbidden band width of the light absorption layer material to be 2.8eV, that is, the minimum absorption boundary of the light absorption layer material is 442 nm (λ 1240/2.8 442>436 nm).
In one embodiment, the light absorbing layer material is cadmium selenide, or cadmium sulfide, or gallium phosphide.
Specifically, when the light absorbing layer is made of cadmium selenide, the forbidden band width (Eg) is 1.7eV, so the absorption boundary λ is 729 nm, that is, light with a wavelength less than 729 nm can be absorbed by the cadmium selenide, that is, absorption of all exposure light can be realized.
Specifically, when the light absorption layer is made of cadmium sulfide, the forbidden band width (Eg) is 2.4eV, so the absorption boundary λ is 516 nm, that is, light with a wavelength less than 516 nm can be absorbed by the cadmium sulfide, that is, absorption of all exposure light can be realized.
Specifically, when the light-absorbing layer is made of gallium phosphide, the forbidden band width (Eg) is 2.25eV, so the absorption boundary λ is 551 nm, that is, light with a wavelength less than 551 nm can be absorbed by the gallium phosphide, that is, absorption of all exposure light can be realized.
In one embodiment, the light absorbing layer has a thickness in a range of 0.1 to 1 micron.
In summary, according to the exposure machine provided in the embodiments of the present invention, the light absorbing layer is added on the side surface of the baffle plate close to the exposure area, so that stray light at the edge of the baffle plate can be effectively absorbed, the diffuse reflection phenomenon at the edge of the baffle plate is weakened, the exposure accuracy is improved, and the technical problem of distortion of an actual exposure pattern caused by diffuse reflection of the stray light at the edge of the baffle plate in the exposure machine in the prior art is solved.
The exposure machine, the preparation method thereof and the use method thereof provided by the embodiment of the invention are described in detail above. It should be understood that the exemplary embodiments described herein should be considered merely illustrative for facilitating understanding of the method of the present invention and its core ideas, and not restrictive.
Claims (10)
1. An exposure machine is characterized by comprising a first baffle plate and a second baffle plate which are positioned on the same plane, wherein the first baffle plate and the second baffle plate correspond to a shading area of the exposure machine, and an area between the first baffle plate and the second baffle plate corresponds to an exposure area of the exposure machine;
and light absorption layers are arranged on the side surfaces, close to the exposure area, of the first baffle and the second baffle, and the maximum forbidden band width of the light absorption layer materials is 2.8 eV.
2. Exposure machine according to claim 1, characterized in that the light-absorbing layer material is cadmium selenide, or cadmium sulphide, or gallium phosphide.
3. The exposure apparatus of claim 1, wherein the light absorbing layer has a thickness in the range of 0.1 micrometers to 1 micrometer.
4. A method for manufacturing an exposure machine is characterized by comprising the following steps:
providing a first baffle plate and a second baffle plate, wherein the first baffle plate and the second baffle plate are positioned on the same plane, the first baffle plate and the second baffle plate correspond to a shading area of the exposure machine, and an area between the first baffle plate and the second baffle plate corresponds to an exposure area of the exposure machine; and
and light absorbing layers are respectively prepared on the side surfaces, close to the exposure area, of the first baffle and the second baffle, and the maximum forbidden band width of the light absorbing layer materials is 2.8 eV.
5. The manufacturing method of exposure machine according to claim 4, wherein the method of manufacturing the light absorbing layer is ion implantation or electroplating.
6. The manufacturing method of exposure machine according to claim 4, wherein the light-absorbing layer material is cadmium selenide, cadmium sulfide, or gallium phosphide.
7. The manufacturing method of the exposure machine according to claim 4, wherein the light absorbing layer has a thickness in a range of 0.1 to 1 μm.
8. Use of an exposure machine according to claim 1, characterized by comprising the steps of:
providing a glass substrate;
coating a photoresist on the glass substrate;
aligning the exposure machine with the glass substrate; and
the glass substrate is irradiated with exposure light.
9. The method of using an exposure machine according to claim 8, wherein the step of aligning the exposure machine with the glass substrate specifically includes:
and aligning the area of the glass substrate, which needs to retain the light resistance, with the shading area of the exposure machine, and aligning the area of the glass substrate, which needs to remove the light resistance, with the exposure area of the exposure machine.
10. Use of an exposure machine according to claim 8, wherein the exposure light has a wavelength of 365 nm, 405 nm or 436 nm.
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| CN202010353315.XA CN111443579A (en) | 2020-04-29 | 2020-04-29 | Exposure machine, preparation method and use method thereof |
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| CN202010353315.XA CN111443579A (en) | 2020-04-29 | 2020-04-29 | Exposure machine, preparation method and use method thereof |
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Citations (5)
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| CN103904224A (en) * | 2014-03-05 | 2014-07-02 | 宁波大学 | Organic photovoltaic cell based on inorganic quantum dot and preparing method |
| US20150022794A1 (en) * | 2011-07-22 | 2015-01-22 | Lapis Semiconductor Co., Ltd. | Semiconductor device manufacturing method and semiconductor device manufacturing apparatus |
| CN106952975A (en) * | 2017-03-09 | 2017-07-14 | 内蒙古大学 | A kind of inorganic perovskite light absorbent and preparation method thereof |
| CN206378686U (en) * | 2016-11-03 | 2017-08-04 | 深圳市柯士达光电有限公司 | A kind of exposure system veiling glare filter |
| CN109485090A (en) * | 2018-12-28 | 2019-03-19 | 中国科学院上海硅酸盐研究所 | A kind of adjustable chromium doping barium stannate nano-powder of forbidden bandwidth and preparation method |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20150022794A1 (en) * | 2011-07-22 | 2015-01-22 | Lapis Semiconductor Co., Ltd. | Semiconductor device manufacturing method and semiconductor device manufacturing apparatus |
| CN103904224A (en) * | 2014-03-05 | 2014-07-02 | 宁波大学 | Organic photovoltaic cell based on inorganic quantum dot and preparing method |
| CN206378686U (en) * | 2016-11-03 | 2017-08-04 | 深圳市柯士达光电有限公司 | A kind of exposure system veiling glare filter |
| CN106952975A (en) * | 2017-03-09 | 2017-07-14 | 内蒙古大学 | A kind of inorganic perovskite light absorbent and preparation method thereof |
| CN109485090A (en) * | 2018-12-28 | 2019-03-19 | 中国科学院上海硅酸盐研究所 | A kind of adjustable chromium doping barium stannate nano-powder of forbidden bandwidth and preparation method |
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Application publication date: 20200724 |
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