CN111441082A - Large-size sapphire crystal growth furnace based on automatic control system - Google Patents
Large-size sapphire crystal growth furnace based on automatic control system Download PDFInfo
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- CN111441082A CN111441082A CN202010351683.0A CN202010351683A CN111441082A CN 111441082 A CN111441082 A CN 111441082A CN 202010351683 A CN202010351683 A CN 202010351683A CN 111441082 A CN111441082 A CN 111441082A
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- charging barrel
- rack
- guide hole
- crystal growth
- control system
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
- C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
- C30B11/10—Solid or liquid components, e.g. Verneuil method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/20—Aluminium oxides
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- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
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- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention relates to the technical field of gem production, in particular to a large-size sapphire crystal growth furnace based on an automatic control system, which comprises a furnace body and a charging barrel, wherein an oxygen pipe is communicated with the charging barrel, a hammering mechanism is arranged on the charging barrel, a screen is arranged in the charging barrel, the bottom of the charging barrel is communicated with a mixing chamber, a hydrogen pipe is communicated with the side wall of the mixing chamber, the bottom of the mixing chamber is communicated with the furnace body, a descending mechanism is arranged at the bottom of the furnace body, a crystallization rod is arranged on the descending mechanism and can extend into the furnace body, a first guide hole and a second guide hole are horizontally arranged on the charging barrel, a first partition plate is arranged in the first guide hole in a sliding manner, the invention improves the uniformity of the powder falling into the mixing chamber by locally separating the powder in the charging barrel, prevents the proportion imbalance of local main materials and auxiliary materials in the charging barrel, and ensures that the produced sapphire, the error is small, and the integral aesthetic property and the production quality are improved.
Description
Technical Field
The invention relates to the technical field of gem production, in particular to a large-size sapphire crystal growth furnace based on an automatic control system.
Background
With the rapid development of science and technology, the market demand of sapphire crystal substrate materials will rapidly increase. The existing sapphire crystal growth technology mainly comprises a flame method, a Czochralski method, a mold guiding method, a heat exchange method, a kyropoulos method, a temperature gradient method and a descent method. The sapphire crystal produced by the flame fusion method has the characteristics of low cost, mature method and wide adaptability, and the produced sapphire is suitable for lamp decoration, indoor decoration and glass decoration.
In the existing device for producing sapphire by a flame fusion method, as shown in fig. 1, a hammering mechanism 7 hammers a charging barrel according to a certain frequency to generate vibration, so that powder in the charging barrel continuously falls into a growth furnace through a screen 6 for production. The sapphire raw material powder is mainly alumina, and is colored with iron and titanium as an auxiliary material, and the granularity of the auxiliary material and the granularity of the main material are different to a certain extent, so that the auxiliary material with smaller granularity can move downwards along the main material gap with larger granularity in the working process of the hammering mechanism 7, most of the auxiliary materials are gathered at the bottom of the powder, the proportion of the auxiliary material at the bottom of the powder is increased, the proportion of the auxiliary material at the top of the powder is decreased, crystals of the powder at the bottom after flame melting and the crystals of the powder at the top have certain color difference, and the attractiveness of the sapphire raw material powder as a decorative material is affected.
Disclosure of Invention
The invention aims to solve the defects in the prior art, and provides a large-size sapphire crystal growth furnace based on an automatic control system.
In order to achieve the purpose, the invention adopts the following technical scheme:
the design is based on an automatic control system, the large-size sapphire crystal growth furnace comprises a furnace body and a charging barrel, wherein an oxygen pipe is communicated with the charging barrel, a hammering mechanism is arranged on the charging barrel, a screen is arranged in the charging barrel, the bottom of the charging barrel is communicated with a mixing chamber, a hydrogen pipe is communicated with the side wall of the mixing chamber, the bottom of the mixing chamber is communicated in the furnace body, a descending mechanism is arranged at the bottom of the furnace body, a crystallization rod is arranged on the descending mechanism and can extend into the furnace body, a first guide hole and a second guide hole are horizontally arranged on the charging barrel, a first partition plate is slidably arranged in the first guide hole, a first rack is horizontally arranged on the first partition plate, toothed blocks are arranged on the upper side and the lower side of the first rack, the first rack can be inserted in the first guide hole, and a second partition plate is slidably arranged in the second guide hole, the feeding device is characterized in that a second rack is horizontally arranged on the second partition plate, the second rack can be inserted into the second guide hole, a reset structure is arranged on the bottom surface of the second partition plate, a steering gear is arranged between the first rack and the second rack on the charging barrel, the first rack and the second rack are both meshed on the steering gear, and the first rack and the hammering mechanism are connected through a transmission structure.
Preferably, the reset structure includes guide bar, sliding sleeve and reset spring, the guide bar horizontal installation be in the feed cylinder of second baffle below, the sliding sleeve welding is in on second baffle bottom surface one side, sliding sleeve sliding connection be in on the guide bar, reset spring cover is established on the guide bar.
Preferably, the return spring is always in a compressed state.
Preferably, the transmission structure comprises a belt and an incomplete gear, the incomplete gear is rotatably mounted on the side wall of the charging barrel, the belt is connected with the hammering mechanism and the incomplete gear, the hammering mechanism can drive the incomplete gear to rotate through the belt, and the incomplete gear can be meshed with the first rack.
Preferably, the first baffle top the inside rotatable a plurality of pivots of installing of feed cylinder, install the stirring rake in the pivot, install driven gear in the pivot, driven gear can mesh on the first rack.
Preferably, the first guide hole and the second guide hole are lined with sealing plugs.
The large-size sapphire crystal growth furnace based on the automatic control system has the beneficial effects that: according to the invention, by locally separating the powder in the charging barrel, the uniformity of the powder falling into the mixing chamber is improved, the unbalance of the proportion of local main materials and auxiliary materials in the charging barrel is prevented, the produced sapphire has uniform chroma and small error, and the integral attractiveness and production quality are improved.
Drawings
FIG. 1 is a diagram of a conventional apparatus for producing sapphire by flame fusion.
FIG. 2 is a front view of a large-size sapphire crystal growth furnace based on an automated control system according to the present invention.
FIG. 3 is a side view of a large-size sapphire crystal growth furnace based on an automated control system according to the present invention.
Fig. 4 is a schematic structural diagram of a charging barrel of a large-size sapphire crystal growth furnace based on an automatic control system.
FIG. 5 is an enlarged view of the large-sized sapphire crystal growth furnace based on the automated control system according to the present invention at position A.
In the figure: the device comprises a descending mechanism 1, a crystallization rod 2, crystals 3, a furnace body 4, a mixing chamber 5, a screen 6, a hammering mechanism 7, an eccentric block 701, a hammer 702, a charging barrel 8, a first guide hole 801, a second guide hole 802, a first partition plate 9, a first rack 10, a second partition plate 11, a second rack 12, a steering gear 13, an incomplete gear 14, a belt 15, a rotating shaft 16, a driven gear 17, a stirring paddle 18, a guide rod 19, a sliding sleeve 20, a return spring 21 and an observation window 22.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments.
Referring to fig. 1-5, jumbo size sapphire crystal growth stove based on automated control system, including furnace body 4 and feed cylinder 8, the intercommunication has the oxygen hose on the feed cylinder 8, be equipped with on the feed cylinder 8 and beat mechanism 7, be equipped with screen cloth 6 in the feed cylinder 8, 8 bottoms of feed cylinder and mixing chamber 5 intercommunication, the intercommunication has the hydrogen pipe on the 5 lateral walls of mixing chamber, 5 bottoms of mixing chamber intercommunication is in the furnace body 4, 4 bottoms of furnace body are equipped with descending mechanism 1, descending mechanism 1 is last to install crystalline rod 2, crystalline rod 2 can stretch into in the furnace body 4, and the theory of operation of fig. 1 is briefly described as follows: in the figure, the hammering mechanism 7 works, namely, the eccentric block 701 is driven to rotate clockwise, the hammer 702 beats the material cylinder according to the rotating speed of the eccentric block 701 and a certain frequency to generate vibration, so that the powder in the material cylinder continuously passes through the screen 6, and meanwhile, the oxygen fed by the oxygen pipe also helps to feed the powder downwards;
hydrogen enters through the hydrogen pipe and is mixed and combusted with oxygen in the mixing process 5. The powder is melted by high temperature flame and falls on a crystallization rod 2 with lower temperature to form crystals. The furnace body 4 is provided with an observation window 22 to observe the crystallization condition. In order to keep the crystallization layers of the crystals to be kept at the same level in the furnace, a descending mechanism 1 is arranged at the same time to slowly move a crystallization rod 2 downwards in the crystallization process of the crystals 3.
A first guide hole 801 and a second guide hole 802 are horizontally formed in the charging barrel 8, sealing plugs 22 are lined in the first guide hole 801 and the second guide hole 802, a first partition plate 9 is slidably mounted in the first guide hole 801, a first rack 10 is horizontally mounted on the first partition plate 9, toothed blocks are arranged on the upper side and the lower side of the first rack 10, the first rack 10 can be inserted into the first guide hole 801, a second partition plate 11 is slidably mounted in the second guide hole 802, a second rack 12 is horizontally mounted on the second partition plate 11, the second rack 12 can be inserted into the second guide hole 802, a reset structure is arranged on the bottom surface of the second partition plate 11 and comprises a guide rod 19, a sliding sleeve 20 and a reset spring 21, the guide rod 19 is horizontally mounted in the charging barrel 8 below the second partition plate 11, the sliding sleeve 20 is welded on one side of the bottom surface of the second clapboard 11, the sliding sleeve 20 is connected on the guide rod 19 in a sliding way, the return spring 21 is sleeved on the guide rod 19, the return spring 21 is always in a compressed state, a steering gear 13 is mounted on the barrel 8 between the first rack 10 and the second rack 12, the first and second racks 10 and 12 are engaged on the steering gear 13, the first rack 10 is connected with the hammering mechanism 7 through a transmission structure, the transmission structure comprises a belt 15 and an incomplete gear 14, the incomplete gear 14 is rotatably arranged on the side wall of the charging barrel 8, the belt 15 is connected with the hammering mechanism 7 and the incomplete gear 14, the hammering mechanism 7 can rotate an incomplete gear 14 via the belt 15, and the incomplete gear 14 can be engaged with the first gear rack 10. A plurality of rotating shafts 16 are rotatably arranged in the charging barrel 8 above the first partition plate 9, stirring paddles 18 are arranged on the rotating shafts 16, driven gears 17 are arranged on the rotating shafts 16, and the driven gears 17 can be meshed with the first racks 10. When the eccentric block 701 works, the belt 15 drives the incomplete gear 14 to rotate, the incomplete gear 14 drives the first rack 10 to move towards the left side, the powder in the charging barrel 8 can be divided into an upper part and a lower part by the first partition plate 9, the uniformity of the powder divided into the upper part and the lower part by the first partition plate 9 is the same, the part of the powder below the first partition plate 9 is divided into two parts by the second partition plate 11, the uniformity of the powder of the upper part and the lower part of the second partition plate 11 is also the same, when the charging barrel 8 is hammered by the hammer 702, the charging barrel 8 is divided by the first partition plate 9, the second partition plate 11 is opened, the powder below the second partition plate 11 falls into the mixing chamber 5, the powder between the second partition plate 11 and the first partition plate 9 falls into the lower part of the second partition plate 11, the incomplete gear 14 continues to rotate, the first rack 10 is separated from the incomplete gear 14, the reset spring 21 drives, the second rack 12 drives the steering gear 13 to work, the steering gear 13 drives the first rack 10 to move towards the right side, the first partition plate 9 is opened again, the powder above the first partition plate 9 falls on the second partition plate 11 again, the first rack 10 can drive the driven gear 17 to work when moving horizontally, the driven gear works to drive the stirring paddle 18 on the rotating shaft 16 to work, the powder above the first partition plate 9 is stirred, and the uniformity is improved.
According to the invention, by locally separating the powder in the charging barrel 8, the uniformity of the powder falling into the mixing chamber 5 is improved, the unbalance of the proportion of the local main material and the auxiliary material in the charging barrel 8 is prevented, the produced sapphire has uniform chroma and small error, and the integral attractiveness and production quality are improved.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art should be considered to be within the technical scope of the present invention, and the technical solutions and the inventive concepts thereof according to the present invention should be equivalent or changed within the scope of the present invention.
Claims (6)
1. Large-size sapphire crystal growth furnace based on automatic control system, comprising a furnace body (4) and a charging barrel (8), wherein the charging barrel (8) is communicated with an oxygen pipe, the charging barrel (8) is provided with a hammering mechanism (7), the charging barrel (8) is internally provided with a screen (6), the bottom of the charging barrel (8) is communicated with a mixing chamber (5), the side wall of the mixing chamber (5) is communicated with a hydrogen pipe, the bottom of the mixing chamber (5) is communicated with the inside of the furnace body (4), the bottom of the furnace body (4) is provided with a descending mechanism (1), the descending mechanism (1) is provided with a crystallization rod (2), the crystallization rod (2) can extend into the furnace body (4), the large-size sapphire crystal growth furnace is characterized in that the charging barrel (8) is horizontally provided with a first guide hole (801) and a second guide hole (802), and a first partition plate (9) is arranged in the first guide hole (801) in a sliding manner, a first rack (10) is horizontally arranged on the first clapboard (9), the upper side and the lower side of the first rack (10) are both provided with tooth blocks, the first rack (10) can be inserted into the first guide hole (801), a second clapboard (11) is arranged in the second guide hole (802) in a sliding way, a second rack (12) is horizontally arranged on the second clapboard (11), the second rack (12) can be inserted into the second guide hole (802), a reset structure is arranged on the bottom surface of the second clapboard (11), a steering gear (13) is arranged on the charging barrel (8) between the first rack (10) and the second rack (12), the first rack (10) and the second rack (12) are both engaged on the steering gear (13), the first rack (10) is connected with the hammering mechanism (7) through a transmission structure.
2. The large-size sapphire crystal growth furnace based on the automatic control system according to claim 1, wherein the reset structure comprises a guide rod (19), a sliding sleeve (20) and a reset spring (21), the guide rod (19) is horizontally installed in the charging barrel (8) below the second partition plate (11), the sliding sleeve (20) is welded on one side of the bottom surface of the second partition plate (11), the sliding sleeve (20) is slidably connected to the guide rod (19), and the reset spring (21) is sleeved on the guide rod (19).
3. The automated control system based large-size sapphire crystal growth furnace of claim 1, wherein the return spring (21) is always in compression.
4. The large-size sapphire crystal growth furnace based on the automatic control system according to claim 1, wherein the transmission structure comprises a belt (15) and a non-complete gear (14), the non-complete gear (14) is rotatably mounted on the side wall of the charging barrel (8), the belt (15) is connected to the hammering mechanism (7) and the non-complete gear (14), the hammering mechanism (7) can drive the non-complete gear (14) to rotate through the belt (15), and the non-complete gear (14) can be meshed on the first rack (10).
5. The large-size sapphire crystal growth furnace based on the automatic control system according to claim 1, wherein a plurality of rotating shafts (16) are rotatably mounted inside the charging barrel (8) above the first partition plate (9), stirring paddles (18) are mounted on the rotating shafts (16), driven gears (17) are mounted on the rotating shafts (16), and the driven gears (17) can be meshed on the first racks (10).
6. The automated control system-based large-size sapphire crystal growth furnace of claim 1, wherein the first guide hole (801) and the second guide hole (802) are lined with a sealing plug (22).
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010351683.0A CN111441082B (en) | 2020-04-28 | 2020-04-28 | Large-size sapphire crystal growth furnace based on automatic control system |
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| CN202010351683.0A CN111441082B (en) | 2020-04-28 | 2020-04-28 | Large-size sapphire crystal growth furnace based on automatic control system |
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| CN111441082B CN111441082B (en) | 2022-04-29 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113279051A (en) * | 2021-04-25 | 2021-08-20 | 弘元新材料(包头)有限公司 | Feeding proportioning device for large-size single crystal segment taking and feeding |
| CN116949560A (en) * | 2023-09-18 | 2023-10-27 | 内蒙古晶环电子材料有限公司 | Sapphire crystal growth furnace |
| CN116949561A (en) * | 2023-09-19 | 2023-10-27 | 内蒙古晶环电子材料有限公司 | Sapphire crystal growth furnace and sapphire crystal growth method |
| CN116949562A (en) * | 2023-09-19 | 2023-10-27 | 内蒙古晶环电子材料有限公司 | Sapphire crystal growth furnace |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3870472A (en) * | 1969-11-26 | 1975-03-11 | Joseph A Adamski | Method and apparatus for growing crystals by annealing the crystal after formation |
| CN204224737U (en) * | 2014-11-26 | 2015-03-25 | 山东萨菲尔晶体科技有限公司 | Flame melt method crystal growth equipment |
| CN208390114U (en) * | 2018-03-23 | 2019-01-18 | 苏州市丽苏塑胶科技有限公司 | A kind of vertical plastic auxiliary agent grinding material screening machine |
| CN109331934A (en) * | 2018-10-09 | 2019-02-15 | 曾爱玲 | A kind of intermittent blanking crushing plant of rare earth |
| CN110067019A (en) * | 2019-06-03 | 2019-07-30 | 中国电子科技集团公司第二十六研究所 | A kind of continuous automatic feeding device of crystal growth and crystal continuous growing system |
-
2020
- 2020-04-28 CN CN202010351683.0A patent/CN111441082B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3870472A (en) * | 1969-11-26 | 1975-03-11 | Joseph A Adamski | Method and apparatus for growing crystals by annealing the crystal after formation |
| CN204224737U (en) * | 2014-11-26 | 2015-03-25 | 山东萨菲尔晶体科技有限公司 | Flame melt method crystal growth equipment |
| CN208390114U (en) * | 2018-03-23 | 2019-01-18 | 苏州市丽苏塑胶科技有限公司 | A kind of vertical plastic auxiliary agent grinding material screening machine |
| CN109331934A (en) * | 2018-10-09 | 2019-02-15 | 曾爱玲 | A kind of intermittent blanking crushing plant of rare earth |
| CN110067019A (en) * | 2019-06-03 | 2019-07-30 | 中国电子科技集团公司第二十六研究所 | A kind of continuous automatic feeding device of crystal growth and crystal continuous growing system |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113279051A (en) * | 2021-04-25 | 2021-08-20 | 弘元新材料(包头)有限公司 | Feeding proportioning device for large-size single crystal segment taking and feeding |
| CN116949560A (en) * | 2023-09-18 | 2023-10-27 | 内蒙古晶环电子材料有限公司 | Sapphire crystal growth furnace |
| CN116949560B (en) * | 2023-09-18 | 2024-03-01 | 内蒙古晶环电子材料有限公司 | Sapphire crystal growth furnace |
| CN116949561A (en) * | 2023-09-19 | 2023-10-27 | 内蒙古晶环电子材料有限公司 | Sapphire crystal growth furnace and sapphire crystal growth method |
| CN116949562A (en) * | 2023-09-19 | 2023-10-27 | 内蒙古晶环电子材料有限公司 | Sapphire crystal growth furnace |
| CN116949562B (en) * | 2023-09-19 | 2024-02-13 | 内蒙古晶环电子材料有限公司 | Sapphire crystal growth furnace |
| CN116949561B (en) * | 2023-09-19 | 2024-02-13 | 内蒙古晶环电子材料有限公司 | Sapphire crystal growth furnace and sapphire crystal growth method |
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