CN111441082A - Large-size sapphire crystal growth furnace based on automatic control system - Google Patents
Large-size sapphire crystal growth furnace based on automatic control system Download PDFInfo
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- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
- C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
- C30B11/10—Solid or liquid components, e.g. Verneuil method
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/20—Aluminium oxides
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Abstract
本发明涉及宝石生产技术领域,尤其是基于自动化控制系统的大尺寸蓝宝石晶体生长炉,包括炉体和料筒,所述料筒上连通有氧气管,所述料筒上设有捶打机构,所述料筒内设有筛网,所述料筒底部与混合室连通,所述混合室侧壁上连通有氢气管,所述混合室底部连通在所述炉体内,所述炉体底部设有下降机构,所述下降机构上安装有结晶杆,所述结晶杆可伸入炉体内,所述料筒上水平开设有第一导向孔和第二导向孔,所述第一导向孔内滑动安装有第一隔板,本发明通过对料筒内的粉料进行局部分离,提高粉料落入混合室内的均匀度,防止料筒内的局部主料与辅料比例失衡,使生产出的蓝宝石色度均匀,误差小,提高整体的美观性与生产质量。The invention relates to the technical field of gemstone production, in particular to a large-size sapphire crystal growth furnace based on an automatic control system, comprising a furnace body and a barrel, an oxygen pipe is connected to the barrel, and a beating mechanism is arranged on the barrel, so that the There is a screen in the barrel, the bottom of the barrel is communicated with the mixing chamber, the side wall of the mixing chamber is communicated with a hydrogen pipe, the bottom of the mixing chamber is communicated with the furnace body, and the bottom of the furnace body is provided with a hydrogen pipe. A descending mechanism, a crystal rod is installed on the descending mechanism, the crystal rod can extend into the furnace body, a first guide hole and a second guide hole are horizontally opened on the barrel, and the first guide hole is slidably installed There is a first separator, the present invention improves the uniformity of powder falling into the mixing chamber by partially separating the powder in the barrel, preventing the imbalance of the proportion of local main materials and auxiliary materials in the barrel, and making the produced sapphire color The degree of uniformity is uniform, the error is small, and the overall aesthetics and production quality are improved.
Description
技术领域technical field
本发明涉及宝石生产技术领域,尤其涉及基于自动化控制系统的大尺寸蓝宝石晶体生长炉。The invention relates to the technical field of gem production, in particular to a large-size sapphire crystal growth furnace based on an automatic control system.
背景技术Background technique
随着科技的快速发展,蓝宝石晶体衬底材料市场需求将迅速增长。目前蓝宝石晶体的生长技术主要有火焰法、提拉法、导模法、热交换法、泡生法、温梯法和下降法生长技术。焰熔法生产的蓝宝石晶体由于具有成本低、方法成熟和适应性广的特点,生产出的蓝宝石适用于灯饰、室内装饰和玻璃装饰品。With the rapid development of science and technology, the market demand for sapphire crystal substrate materials will grow rapidly. At present, the growth technologies of sapphire crystal mainly include flame method, pulling method, guided mode method, heat exchange method, bubble growth method, temperature gradient method and descending method. The sapphire crystal produced by the flame fusion method has the characteristics of low cost, mature method and wide adaptability, and the produced sapphire is suitable for lighting, interior decoration and glass decorations.
现有的焰熔法生产蓝宝石装置如图1所示,锤打机构7按一定频率敲打料筒,产生振动,使料筒中粉料不断通过筛网6落入生长炉中进行生产。蓝宝石的原料粉料的以氧化铝为主,辅以铁和钛进行上色,由于辅料和主料的颗粒度的大小有一定的区别,锤打机构7工作过程中颗粒度较小的辅料会沿着颗粒度较大的主料间隙中下移,导致多数辅料聚集在粉料的底部,粉料底部的辅料的比例变大,粉料顶部的辅料的比例变小,导致底部粉料焰熔后的结晶体与顶部的粉料的结晶体有一定的色差,影响作为装饰材料时的美观性。As shown in FIG. 1 , the existing flame-melting method for producing sapphire has a hammering mechanism 7 that beats the barrel at a certain frequency to generate vibration, so that the powder in the barrel continuously falls into the growth furnace through the
发明内容SUMMARY OF THE INVENTION
本发明的目的是为了解决现有技术中存在的缺点,而提出的基于自动化控制系统的大尺寸蓝宝石晶体生长炉。The purpose of the present invention is to propose a large-size sapphire crystal growth furnace based on an automatic control system in order to solve the shortcomings in the prior art.
为了实现上述目的,本发明采用了如下技术方案:In order to achieve the above object, the present invention adopts the following technical solutions:
设计基于自动化控制系统的大尺寸蓝宝石晶体生长炉,包括炉体和料筒,所述料筒上连通有氧气管,所述料筒上设有捶打机构,所述料筒内设有筛网,所述料筒底部与混合室连通,所述混合室侧壁上连通有氢气管,所述混合室底部连通在所述炉体内,所述炉体底部设有下降机构,所述下降机构上安装有结晶杆,所述结晶杆可伸入炉体内,所述料筒上水平开设有第一导向孔和第二导向孔,所述第一导向孔内滑动安装有第一隔板,所述第一隔板上水平安装有水平安装有第一齿条,所述第一齿条上下两侧均设有齿块,所述第一齿条可插装在所述第一导向孔内,所述第二导向孔内滑动安装有第二隔板,所述第二隔板上水平安装有第二齿条,所述第二齿条可插装在所述第二导向孔内,所述第二隔板底面设有复位结构,所述第一齿条和所述第二齿条之间的所述料筒上安装有转向齿轮,所述第一齿条和所述第二齿条均啮合在所述转向齿轮上,所述第一齿条与所述捶打机构之间通过传动结构连接。A large-size sapphire crystal growth furnace based on an automatic control system is designed, including a furnace body and a barrel, an oxygen pipe is connected to the barrel, a beating mechanism is arranged on the barrel, and a screen is arranged in the barrel, The bottom of the barrel is communicated with the mixing chamber, the side wall of the mixing chamber is communicated with a hydrogen pipe, the bottom of the mixing chamber is communicated with the furnace body, and the bottom of the furnace body is provided with a descending mechanism, which is installed on the descending mechanism There is a crystal rod, the crystal rod can extend into the furnace body, a first guide hole and a second guide hole are horizontally opened on the barrel, a first baffle is slidably installed in the first guide hole, and the first guide hole is slidably installed in the first guide hole. A first rack is installed horizontally on a partition plate, the upper and lower sides of the first rack are provided with gear blocks, the first rack can be inserted into the first guide hole, the A second partition plate is slidably installed in the second guide hole, a second rack is horizontally installed on the second partition plate, the second rack can be inserted into the second guide hole, and the second rack is installed in the second guide hole. The bottom surface of the partition is provided with a reset structure, a steering gear is installed on the barrel between the first rack and the second rack, and the first rack and the second rack are meshed with each other. On the steering gear, the first rack and the beating mechanism are connected by a transmission structure.
优选的,所述复位结构包括导向杆、滑套和复位弹簧,所述导向杆水平安装在所述第二隔板下方的料筒内,所述滑套焊接在所述第二隔板底面一侧上,所述滑套滑动连接在所述导向杆上,所述复位弹簧套设在所述导向杆上。Preferably, the reset structure includes a guide rod, a sliding sleeve and a reset spring, the guide rod is horizontally installed in the barrel below the second partition plate, and the sliding sleeve is welded on the bottom surface of the second partition plate. On the side, the sliding sleeve is slidably connected to the guide rod, and the return spring is sleeved on the guide rod.
优选的,所述复位弹簧始终处于压缩状态。Preferably, the return spring is always in a compressed state.
优选的,所述传动结构包括皮带和不完全齿轮,所述不完全齿轮可转动的安装在所述料筒侧壁上,所述皮带连接在所述捶打机构和不完全齿轮上,所述捶打机构可通过所述皮带驱动不完全齿轮旋转,所述不完全齿轮可啮合在所述第一齿条上。Preferably, the transmission structure includes a belt and an incomplete gear, the incomplete gear is rotatably mounted on the side wall of the barrel, the belt is connected to the beating mechanism and the incomplete gear, and the beating The mechanism may drive a partial gear to rotate through the belt, and the partial gear may be engaged on the first rack.
优选的,所述第一隔板上方的所述料筒内部可转动的安装有多个转轴,所述转轴上安装有搅拌桨,所述转轴上安装有从动齿轮,所述从动齿轮可啮合在所述第一齿条上。Preferably, a plurality of rotating shafts are rotatably installed inside the barrel above the first partition plate, a stirring paddle is installed on the rotating shaft, and a driven gear is installed on the rotating shaft, and the driven gear can meshed with the first rack.
优选的,所述第一导向孔和所述第二导向孔内均衬有密封塞。Preferably, both the first guide hole and the second guide hole are lined with sealing plugs.
本发明提出的基于自动化控制系统的大尺寸蓝宝石晶体生长炉,有益效果在于:本发明通过对料筒内的粉料进行局部分离,提高粉料落入混合室内的均匀度,防止料筒内的局部主料与辅料比例失衡,使生产出的蓝宝石色度均匀,误差小,提高整体的美观性与生产质量。The large-size sapphire crystal growth furnace based on the automatic control system proposed by the present invention has the beneficial effects that the present invention improves the uniformity of the powder falling into the mixing chamber by partially separating the powder in the barrel, and prevents the powder in the barrel. The proportion of local main materials and auxiliary materials is unbalanced, so that the produced sapphire has uniform chromaticity, small error, and improves the overall aesthetics and production quality.
附图说明Description of drawings
图1为现有的焰熔法生产蓝宝石装置图。FIG. 1 is a diagram of an existing flame-melting method for producing sapphire.
图2为本发明提出的基于自动化控制系统的大尺寸蓝宝石晶体生长炉的主视图。FIG. 2 is a front view of the large-size sapphire crystal growth furnace based on the automatic control system proposed by the present invention.
图3为本发明提出的基于自动化控制系统的大尺寸蓝宝石晶体生长炉的侧视图。FIG. 3 is a side view of the large-size sapphire crystal growth furnace based on the automatic control system proposed by the present invention.
图4为本发明提出的基于自动化控制系统的大尺寸蓝宝石晶体生长炉的料筒的结构示意图。FIG. 4 is a schematic structural diagram of the barrel of the large-size sapphire crystal growth furnace based on the automatic control system proposed by the present invention.
图5为本发明提出的基于自动化控制系统的大尺寸蓝宝石晶体生长炉的A处放大图。FIG. 5 is an enlarged view of position A of the large-size sapphire crystal growth furnace based on the automatic control system proposed by the present invention.
图中:下降机构1、结晶杆2、晶体3、炉体4、混合室5、筛网6、捶打机构7、偏心块701、小锤702、料筒8、第一导向孔801、第二导向孔802、第一隔板9、第一齿条10、第二隔板11、第二齿条12、转向齿轮13、不完全齿轮14、皮带15、转轴16、从动齿轮17、搅拌桨18、导向杆19、滑套20、复位弹簧21、观察窗22。In the figure: descending mechanism 1, crystallizing rod 2, crystal 3, furnace body 4,
具体实施方式Detailed ways
下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, but not all of the embodiments.
参照图1-5,基于自动化控制系统的大尺寸蓝宝石晶体生长炉,包括炉体4和料筒8,所述料筒8上连通有氧气管,所述料筒8上设有捶打机构7,所述料筒8内设有筛网6,所述料筒8底部与混合室5连通,所述混合室5侧壁上连通有氢气管,所述混合室5底部连通在所述炉体4内,所述炉体4底部设有下降机构1,所述下降机构1上安装有结晶杆2,所述结晶杆2可伸入炉体4内,图1的工作原理简述如下:图中锤打机构7工作,即驱动偏心块701顺时针旋转,根据偏心块701的转速小锤702按一定频率敲打料筒,产生振动,使料筒中粉料不断通过筛网6,同时,由氧气管送进的氧气,也帮助往下送粉料;1-5, a large-size sapphire crystal growth furnace based on an automatic control system includes a furnace body 4 and a
氢气经氢气管进入,在混合时5内和氧气一起混合燃烧。粉料在经过高温火焰被熔融而落在一个温度较低的结晶杆2上结成晶体了。炉体4设有观察窗22以观看结晶状况。为保持晶体的结晶层在炉内先后维持同一水平,在晶体3的结晶过程中,同时设置下降机构1,把结晶杆2缓缓下移。The hydrogen enters through the hydrogen pipe, and is mixed and combusted with oxygen during mixing 5. The powder is melted by a high temperature flame and falls on a crystal rod 2 with a lower temperature to form crystals. The furnace body 4 is provided with an
所述料筒8上水平开设有第一导向孔801和第二导向孔802,所述第一导向孔801和所述第二导向孔802内均衬有密封塞22,所述第一导向孔801内滑动安装有第一隔板9,所述第一隔板9上水平安装有水平安装有第一齿条10,所述第一齿条10上下两侧均设有齿块,所述第一齿条10可插装在所述第一导向孔801内,所述第二导向孔802内滑动安装有第二隔板11,所述第二隔板11上水平安装有第二齿条12,所述第二齿条12可插装在所述第二导向孔802内,所述第二隔板11底面设有复位结构,所述复位结构包括导向杆19、滑套20和复位弹簧21,所述导向杆19水平安装在所述第二隔板11下方的料筒8内,所述滑套20焊接在所述第二隔板11底面一侧上,所述滑套20滑动连接在所述导向杆19上,所述复位弹簧21套设在所述导向杆19上,所述复位弹簧21始终处于压缩状态,所述第一齿条10和所述第二齿条12之间的所述料筒8上安装有转向齿轮13,所述第一齿条10和所述第二齿条12均啮合在所述转向齿轮13上,所述第一齿条10与所述捶打机构7之间通过传动结构连接,所述传动结构包括皮带15和不完全齿轮14,所述不完全齿轮14可转动的安装在所述料筒8侧壁上,所述皮带15连接在所述捶打机构7和不完全齿轮14上,所述捶打机构7可通过所述皮带15驱动不完全齿轮14旋转,所述不完全齿轮14可啮合在所述第一齿条10上。所述第一隔板9上方的所述料筒8内部可转动的安装有多个转轴16,所述转轴16上安装有搅拌桨18,所述转轴16上安装有从动齿轮17,所述从动齿轮17可啮合在所述第一齿条10上。偏心块701工作时,会通过皮带15带动不完全齿轮14旋转,不完全齿轮14驱动第一齿条10向左侧移动,料筒8内的粉料可被第一隔板9分隔为上下两部分,且第一隔板9分隔上下两部分粉料的均匀度相同,第一隔板9下方的部分粉料又被第二隔板11分成两部分,第二隔板11上下两部分的粉料的均匀度也相同,当小锤702锤击料筒8时,第一隔板9将料筒8分隔,第二隔板11打开,第二隔板11下方的粉料会落入混合室5内,第二隔板11和第一隔板9之间的粉料落入第二隔板11的下方,不完全齿轮14继续旋转,第一齿条10脱离不完全齿轮14,在复位结构中复位弹簧21带动第二隔板1重新分隔粉料,第二齿条12带动转向齿轮13工作,转向齿轮13带动第一齿条10向右侧移动,第一隔板9重新打开,第一隔板9上方的粉料重新落在第二隔板11上,在第一齿条10水平移动的同时会带动从动齿轮17工作,从动齿轮工作带动转轴16上搅拌桨18工作,对第一隔板9上方的粉料进行搅拌,提高均匀度。A
本发明通过对料筒8内的粉料进行局部分离,提高粉料落入混合室5内的均匀度,防止料筒8内的局部主料与辅料比例失衡,使生产出的蓝宝石色度均匀,误差小,提高整体的美观性与生产质量。By partially separating the powder in the
以上所述,仅为本发明较佳的具体实施方式,但本发明的保护范围并不局限于此,任何熟悉本技术领域的技术人员在本发明揭露的技术范围内,根据本发明的技术方案及其发明构思加以等同替换或改变,都应涵盖在本发明的保护范围之内。The above description is only a preferred embodiment of the present invention, but the protection scope of the present invention is not limited to this. The equivalent replacement or change of the inventive concept thereof shall be included within the protection scope of the present invention.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
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| CN116949561A (en) * | 2023-09-19 | 2023-10-27 | 内蒙古晶环电子材料有限公司 | Sapphire crystal growth furnace and sapphire crystal growth method |
| CN116949562A (en) * | 2023-09-19 | 2023-10-27 | 内蒙古晶环电子材料有限公司 | Sapphire crystal growth furnace |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113279051A (en) * | 2021-04-25 | 2021-08-20 | 弘元新材料(包头)有限公司 | Feeding proportioning device for large-size single crystal segment taking and feeding |
| CN116949560A (en) * | 2023-09-18 | 2023-10-27 | 内蒙古晶环电子材料有限公司 | Sapphire crystal growth furnace |
| CN116949560B (en) * | 2023-09-18 | 2024-03-01 | 内蒙古晶环电子材料有限公司 | Sapphire crystal growth furnace |
| CN116949561A (en) * | 2023-09-19 | 2023-10-27 | 内蒙古晶环电子材料有限公司 | Sapphire crystal growth furnace and sapphire crystal growth method |
| CN116949562A (en) * | 2023-09-19 | 2023-10-27 | 内蒙古晶环电子材料有限公司 | Sapphire crystal growth furnace |
| CN116949561B (en) * | 2023-09-19 | 2024-02-13 | 内蒙古晶环电子材料有限公司 | Sapphire crystal growth furnace and sapphire crystal growth method |
| CN116949562B (en) * | 2023-09-19 | 2024-02-13 | 内蒙古晶环电子材料有限公司 | Sapphire crystal growth furnace |
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