CN111440210A - Preparation method, product and application of niobium or tantalum-containing organic compound - Google Patents
Preparation method, product and application of niobium or tantalum-containing organic compound Download PDFInfo
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- CN111440210A CN111440210A CN202010423502.0A CN202010423502A CN111440210A CN 111440210 A CN111440210 A CN 111440210A CN 202010423502 A CN202010423502 A CN 202010423502A CN 111440210 A CN111440210 A CN 111440210A
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- C—CHEMISTRY; METALLURGY
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- C07F9/005—Compounds of elements of Group 5 of the Periodic System without metal-carbon linkages
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
Abstract
The invention provides a method for preparing an organic compound containing niobium or tantalum, which can lead iPrN to M (NR)1R2)3The yield of (M is Nb or Ta) is improved to more than 60 percent, and the product iPrN is M (NR)1R2)3The (M is Nb or Ta) has more suitable decomposition temperature, and the application in the field of preparing films by thermal A L D or PEA L D can meet the temperature requirement of thermal A L D or PEA L D on precursors, and can realize the A L D deposition of metal oxide and nitride films with higher temperature.
Description
[ technical field ] A method for producing a semiconductor device
The invention belongs to the field of chemistry, and particularly relates to a preparation method, a product and application of an organic compound containing niobium or tantalum.
[ background of the invention ]
Because of the inherent advantages of film purity, excellent coverage rate and the like, the A L D (atomic layer deposition) technology is applied to semiconductor processing and manufacturing from the beginning of the 21 st century, the high-k dielectric layer of the DRAM capacitor adopts the technology first, but in recent years, the A L D is also widely applied in other semiconductor process fields, as the 3D structure in the device is more and more complex, the depth-to-width ratio of the DRAM chip groove is more and more large, and the uniform and complete deposition coverage can be realized only by using the thermal A L D deposition mode.
A successful A L D process requires a suitable precursor, Ta, which is a substance that carries the target element, is in a gaseous or volatile liquid state, is chemically thermally stable, and has corresponding reactive or physical properties2O5、TaN、Nb2O5Films containing niobium or tantalum, such as NbN, have very excellent properties in some semiconductor fields, such as high dielectric constant, high refractive index or high density, and are very potential films, however, the selection range of corresponding precursor materials is narrow, and fewer precursors can be applied to the a L D process.
The tantalum-containing precursor initially used in the A L D process was TaCl5However, TaCl5The corrosion is strong, and the deposition cavity is easily damaged; then, Ta (NMe)2)5(abbreviated as PDMAT) is a more commonly used precursor material, but the precursor is a solid that tends to introduce solid particles into the deposition chamber during introduction of precursor vapor into the chamber, resulting in device failure (reference: High-performance plasma-amide precursor for the atomic layer deposition of Ta)2O5T.blanquart et al, semiconductor.sci.technol.27 (2012) 073003); later, more materials with imine groups were chosen instead of the commonly used PDMAT, the most common structure being tBuN ═ ta (netme)3I.e., t-butyliminotris (ethylmethylamino) tantalum, but this molecule begins to decompose very slowly at room temperature, again with a maximum deposition temperature of no more than 250 ℃ (ref: Vapor Pressures of 3- (dimethyllamino) dimethyl indenium, (tert-butyl) bis (diethyl) cyclopentadienyl tanatalum, and (tert-butyl) tris (ethyl methyl) tanatalum, j.chem.eng.), failing to meet the temperature requirements of thermal a L D for the precursor film and limiting the improvement of many properties of the film (e.g., the formation of a particular crystal orientation, the maintenance of high dielectric constant, etc.).
Likewise, previously commonly used niobium-containing precursor materials include: nb (OEt)5But it is heavyLow volume rate (about 0.3A/cycle); or from NbCl5、NbF5And the like, but the HCl or HF produced has significant corrosion on the chamber; tBuN ═ Nb (NEtMe)3However, the precursor has general thermal stability and low vapor pressure, which limits the application of the precursor in high temperature conditions and also easily results in high C content in the product film.
Accordingly, there is a continuing search for more suitable niobium or tantalum containing precursor materials. US7723535B2 recently discloses an organometallic precursor iPrN ═ Ta (NR) useful for thin film deposition1R2)3However, the iPrN ═ Ta (NR) of this patent1R2)3The preparation process is complicated, and iPrN ═ TaCl is generated by introducing pyridine3Py2Adding lithium amide to the complex of (1) to form iPrN ═ Ta (NR)1R2)3The yield is usually below 50% (as mentioned in the patent US7723535B2, the yield is only 39%), which is far from meeting the requirement of mass production.
[ summary of the invention ]
The invention provides a method for preparing an organic compound containing niobium or tantalum, which can lead iPrN to M (NR)1R2)3The yield of (M is Nb or Ta) is improved to more than 60%.
The invention also provides an organic compound iPrN (NR) containing niobium or tantalum obtained by the preparation method1R2)3(M is Nb or Ta), and has a more suitable decomposition temperature.
The invention also provides application of the niobium or tantalum-containing organic compound in the field of preparing films by using thermal A L D or PEA L D, and the requirement of thermal A L D or PEA L D on the temperature of precursors can be met.
The technical scheme of the invention is as follows:
a method for preparing an organic compound containing niobium or tantalum, comprising the steps of:
s1: MX is prepared from5Adding the mixture into an organic solvent, and uniformly mixing to form a body system I; wherein M is Nb or Ta, and X is F, Cl, Br or I;
s2: adding to System IThe general formula is HNR1R2Stirring to form a system II; wherein R is1、R2Is a substituent group;
s3: adding isopropylamine into the system II and continuously stirring;
s4: adding alkyl lithium or alkyl lithium solution to form a system III, and stirring for reaction;
s5: filtering and distilling.
Further, the above preparation method further includes step S6: rectifying and purifying the product obtained from S5 to obtain electronic grade iPrN (NR) with purity of more than 99.999 percent1R2)3。
Further, in the step S2, the mixture is cooled to-30 ℃ to 0 ℃ and then the HNR with the general formula is added1R2The amine of (1).
Further, in step S4, the mixture is cooled to-30 ℃ to 0 ℃ and then the alkyllithium or the alkyllithium solution is added.
Further, the organic solvent in step S1 includes at least one of toluene, tetrahydrofuran, n-hexane, n-pentane, n-heptane, and diethyl ether.
Further, the substituent group includes at least one of alkyl, alkenyl, alkynyl, and aryl.
Further, the above-mentioned substituent group is methyl, ethyl, n-propyl, isopropyl, n-butyl, tert-butyl or sec-butyl.
Further, the general formula is HNR1R2The amine of (a) includes at least one of dimethylamine, ethylmethylamine, diethylamine, diisopropylamine or di-sec-butylamine.
The technical scheme has the following beneficial effects:
the yield of the preparation method reaches more than 60%, and is remarkably improved compared with the reported method (20-40%).
The other technical scheme of the invention is as follows:
an organic compound containing niobium or tantalum, which is obtained by the production method according to any one of claims 1 to 8.
The technical scheme has the following beneficial effects:
the product has good thermal stability, is more suitable for thermal A L D or PEA L D film deposition, and has the critical temperature or the highest temperature in the A L D range (decomposition occurs after the temperature is exceeded, CVD deposition is introduced) ratio of tBuN ═ M (NR)1R2)3The structure is higher than 100 ℃.
The invention adopts another technical scheme as follows:
the application of the organic compound containing niobium or tantalum is characterized in that the organic compound containing niobium or tantalum is a product obtained by the preparation method of claims 1-8 and is applied to the field of preparing a thin film by thermal A L D or PEA L D with the deposition temperature of 200-400 ℃.
The technical scheme has the following beneficial effects:
the deposition method has the advantages that A L D deposition of the metal oxide and nitride thin film at higher temperature can be realized, the carbon content in the thin film is reduced, the density of the thin film is improved, better performance can be realized, and the overall quality of the device is improved.
[ description of the drawings ]
FIG. 1 shows an example prepared from iPrN ═ Ta (NEtMe)3Deposition to obtain Ta2O5XPS analysis spectrum of C content in the film;
FIG. 2 is iPrN ═ Ta (NEtMe)3And tBu ═ Ta (NEtMe)3Decomposition graph of (a).
Wherein, the (1) to (3) in the map correspond to the carbon content in the surface, the interior and the substrate of the film respectively.
[ detailed description ] embodiments
The present invention will be described in further detail with reference to the following examples, but the present invention is not limited to the following examples.
The following examples are not provided to limit the scope of the present invention, nor are the steps described to limit the order of execution, and the directions described are limited to the drawings. Modifications of the invention which are obvious to those skilled in the art in view of the prior art are also within the scope of the invention as claimed.
In the present invention, M represents a metal element, X represents halogen, Me is methyl, Et is ethyl, tBu is tert-butyl, R1、R2Is substituted alkyl, Py is pyridine; other symbols not specifically mentioned are the usual meanings understood by those skilled in the art.
The preparation method of the niobium or tantalum-containing organic compound mainly comprises the following steps:
s1: MX is prepared from5Adding the mixture into an organic solvent, uniformly mixing to form a body system I, and further cooling to improve the yield; wherein M is V, Nb or Ta, and X is F, Cl, Br or I; wherein the organic solvent can be selected from toluene, tetrahydrofuran, n-hexane, n-pentane, n-heptane, diethyl ether, etc. according to actual conditions;
s2: adding HNR into the system I1R2Stirring to form a system II; wherein R is1、R2Is a substituent group including but not limited to alkyl, alkenyl, alkynyl, aryl, and optionally methyl, ethyl, n-propyl, isopropyl, n-butyl, t-butyl, or sec-butyl; the general formula is HNR1R2The amines of (a) include, but are not limited to, dimethylamine, ethylmethylamine, diethylamine, diisopropylamine, or di-sec-butylamine;
s3: adding isopropylamine into the system II and continuously stirring;
s4: cooling and adding the lithium alkyl or the lithium alkyl solution, stirring and gradually raising the temperature to room temperature, wherein the change of the temperature is beneficial to improving the yield;
s5: filtering and distilling.
In order to further improve the purity of the product, the method also comprises the step S6: rectifying and purifying the product obtained from S5 to obtain a product iPrN (NR) with the purity of more than 99.999 percent1R2)3(i.e., electronic grade products, metal impurities less than 1 ppm).
The niobium or tantalum-containing organic compound obtained by the preparation method has higher decomposition temperature and better A L D deposition performance, has very high application value in the field of preparing films by using hot A L D or PEA L D, and can extend the deposition temperature of the hot A L D or PEA L D to 200-400 ℃.
The calculation method of the product yield of the invention comprises the following steps:
example one
iPrN ═ Ta (NEtMe)3The preparation method comprises the following steps:
s1: 9.91g of TaCl5Adding the mixture into toluene of 90m L, and uniformly stirring to form a formation system I;
s2: cooling to-20 deg.C, adding 6.56g ethylmethylamine into system I to form system II;
s3: then adding 1.64g of isopropylamine to form a system III, and continuously stirring for 2 hours to slowly raise the system III to the room temperature;
s4, cooling to-10 ℃, adding 66m L2.5.5 mol/L n-butyl lithium n-hexane solution to form a system IV, stirring, gradually raising the temperature to the room temperature, and continuously stirring the system IV for 12 hours;
s5: filtered and distilled to give 7.62g of an iPrN ═ Ta (NEtMe) solution containing 99% or more3The initial product of (a);
s6: the electronic grade product with the purity of more than 99.999 percent is obtained by rectification and purification.
The preparation method is iPrN ═ Ta (NEtMe)3The yield of the primary product can reach 66.7 percent. The method has the advantages of only 6 steps for obtaining the electronic grade product, less links, less filtration times (only once), and about 20 hours of total time except for rectification and purification.
In atomic layer deposition, the decomposition temperature of the reaction source molecules on the substrate can be verified by means of half-cycle, and the method comprises the following steps:
(1) heating the substrate to a specific temperature;
(2) heating a source bottle containing a reaction source to 90 ℃, and introducing the reaction source material into an A L D reaction cavity in a bubbling, steam suction or liquid direct injection mode for 1 sec;
(3) after the reaction source material forms chemical adsorption on the surface of the substrate or the device, extracting redundant reaction sources, and purging with inert gas at the flow rate of 100sccm for 1 sec;
in this manner, a "half cycle" of a L D deposition is performed and the film thickness on the substrate is measured using an ellipsometer for a number of cycles, and if the film thickness suddenly increases (the deposition rate suddenly increases) at a certain temperature, it indicates that the reaction source molecules are decomposed at that temperature, a CVD (chemical vapor deposition) component is introduced, and the decomposed product is deposited on the substrate to increase the thickness, fig. 2 is iPrN ta (netme)3And tBu ═ Ta (NEtMe)3Comparison of iPrN ═ Ta (NEtMe)3And tBu ═ Ta (NEtMe)3Known as tBu ═ Ta (NEtMe)3Decomposition starts at 250 ℃ and iPrN ═ Ta (NEtMe)3The decomposition temperature of (A) is above 350 ℃.
iPrN ═ Ta (NEtMe) obtained by the above production method3As precursor, using thermal A L D, with H2O is taken as an oxidant, thin film deposition is carried out on a Si substrate, the deposition temperature is 300 ℃, and Ta can be obtained2O5A film having a deposition rate of 0.81A/cycle, an O/Ta ratio of 2.54:1 as measured by XPS, and a C content below the detection limit; the results of XPS test for C content are shown in fig. 1. The element content in the film is analyzed by Ar ion bombardment (sputter). In the spectrum, (1) to (3) correspond to the carbon contents in the surface of the film, the inside of the film and the substrate, respectively. From this analysis data, it is found that the carbon content in the film is substantially 0, below the detection limit.
Comparative example 1
iPrN ═ Ta (NEtMe) using pyridine as ligand3The preparation method comprises the following steps:
s1: 14.4g of TaCl5Adding the mixture into toluene of 200m L, and stirring to form a system I;
s2: adding 4.75g of isopropylamine into the system I to form a system II;
s3, after stirring for 30 minutes, adding 13m L pyridine into the system to form a system III, and continuing stirring for 6 hours;
s4, filtering, mixing the solid with 200m L Tetrahydrofuran (THF) to form a system V, stirring for 1 hour, and filtering again;
s5, further adding 200m of L n-hexane into the system V to form a system VI, and stirring;
s6: slowly adding 5.1g of methyl ethylamine into the system VI, and stirring overnight;
s7: then, all solvents are pumped to be dry to obtain viscous substances;
s8, adding 120m of L n-hexane into the mixture to form a bulk system VII, stirring the bulk system VII for 2 hours, dissolving the product, and filtering out residues;
s9: the solvent in the filtrate was then dried by suction and distilled to obtain 6.52g of a mixture containing 99% or more of iPrN ═ Ta (NEtMe)3Primary products;
s10: the electronic grade product with the purity of more than 99.999 percent is obtained by rectification and purification.
The preparation method is iPrN ═ Ta (NEtMe)3The yield of the primary product is 39.5 percent, the electronic-grade product obtained by the method has more steps (10 steps) and more filtration times, and the total time is more than 30 hours except for rectification and purification.
Example two
iPrN ═ Nb (NEt)2)3The preparation method comprises the following steps:
s1: 4.76g of NbCl5Adding 40m of L toluene and 10m of L tetrahydrofuran, and stirring to form a system I;
s2: cooling to-30 deg.C, adding 5.16g diethylamine into system I to form system II;
s3: then adding 1.04g of isopropylamine to form a system III, and continuously stirring for 2 hours to slowly raise the system III to the room temperature;
s4, cooling to-15 ℃, adding 45m L2.5.5 mol/L mol of n-hexane solution of tert-butyl lithium to form a system IV, stirring, gradually raising the temperature to room temperature, and continuously stirring the system IV for 12 hours;
s5: the filtrate was distilled to obtain 3.58g of iPrN ═ Nb (NEt) containing 99% or more2)3Primary products;
s6: the electronic grade product with the purity of more than 99.999 percent is obtained by rectification and purification.
The preparation method is iPrN ═ Nb (NEt)2)3The yield of the primary product can reach 60 percent. The method can obtain electronsThe grade product only needs 6 steps, the links are few, the filtration times are few (only once), and the total time is about 20 hours except the rectification and purification.
iPrN ═ Nb (NEt) obtained by the above production method2)3Electronic grade product is precursor, and uses thermal A L D and H2O is taken as an oxidant, thin film deposition is carried out on a Si substrate, the deposition temperature is 300 ℃, and Nb can be obtained2O5The film had a deposition rate of 0.81A/cycle, an O/Nb ratio of 2.5:1 as measured by XPS, and a C content below the detection limit.
Comparative example No. two
iPrN ═ Nb (NEt) using pyridine as ligand2)3The preparation method comprises the following steps:
s1: 8.15g of NbCl5Adding the mixture into toluene of 150m L, and stirring to form a system I;
s2: adding 3.56g of isopropylamine into the system I to form a system II;
s3, after stirring for 30 minutes, adding 9.8m L pyridine into the system to form a system III, and continuing stirring for 6 hours;
s4, filtering, mixing the solid with 150m L Tetrahydrofuran (THF) to form a system V, stirring for 1 hour, and filtering again;
s5, further adding 150m of L n-hexane into the system V to form a system VI, and stirring;
s6: slowly adding 4.75g of diethylamine into system VI, and stirring overnight;
s7: then, all solvents are pumped to be dry to obtain viscous substances;
s8, adding 80m L n-hexane into the mixture to form a bulk system VII, stirring for 2 hours, dissolving the product, and filtering out residues;
s9: the solvent in the filtrate was then dried by suction and distilled to obtain 2.13g of a product containing 99% or more of iPrN ═ Nb (NEt)2)3Primary products;
s10: the electronic grade product with the purity of more than 99.999 percent is obtained by rectification and purification.
iPrN ═ Nb (NEt) of the above preparation method2)3The yield of the primary product is 20.9 percent; the method can obtain electronic grade product with more steps (10 steps), and filteringMany, the total time is more than 30 hours except for rectification and purification.
Claims (10)
1. A method for preparing an organic compound containing niobium or tantalum, comprising the steps of:
s1: MX is prepared from5Adding the mixture into an organic solvent, and uniformly mixing to form a body system I; wherein M is Nb or Ta, and X is F, Cl, Br or I;
s2: adding HNR into the system I1R2Stirring to form a system II; wherein R is1、R2Is a substituent group;
s3: adding isopropylamine into the system II and continuously stirring;
s4: adding alkyl lithium or alkyl lithium solution to form a system III, and stirring for reaction;
s5: filtering and distilling.
2. The method for producing an organic compound containing niobium or tantalum according to claim 1, further comprising step S6: rectifying and purifying the product obtained from S5 to obtain electronic grade iPrN (NR) with purity of more than 99.999 percent1R2)3。
3. The method of claim 1, wherein the step S2 is performed by cooling to-30 to 0 ℃ and then adding HNR1R2The amine of (1).
4. The method of claim 1, wherein the step S4 is performed by cooling to-30 to 0 ℃ and adding alkyl lithium or a solution of alkyl lithium.
5. The method for producing an organic compound containing niobium or tantalum according to claim 1 or 2, wherein the organic solvent of step S1 comprises at least one of toluene, tetrahydrofuran, n-hexane, n-pentane, n-heptane, and diethyl ether.
6. The method for producing the niobium or tantalum-containing organic compound according to claim 1 or 2, wherein the substituent group includes at least one of an alkyl group, an alkenyl group, an alkynyl group, and an aryl group.
7. The method of claim 6, wherein the substituent group is methyl, ethyl, n-propyl, isopropyl, n-butyl, t-butyl, or sec-butyl.
8. The method of claim 1 or 2, wherein the organic compound of formula HNR is prepared from a compound of formula I1R2The amine of (a) includes at least one of dimethylamine, ethylmethylamine, diethylamine, diisopropylamine or di-sec-butylamine.
9. An organic compound containing niobium or tantalum, which is obtained by the production method according to any one of claims 1 to 8.
10. The application of the niobium or tantalum-containing metal organic compound is characterized in that the niobium or tantalum-containing metal organic compound is a product obtained by the preparation method of claims 1-8 and is applied to the field of preparing films by thermal A L D or PEA L D with the deposition temperature of 200-400 ℃.
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6552209B1 (en) * | 2002-06-24 | 2003-04-22 | Air Products And Chemicals, Inc. | Preparation of metal imino/amino complexes for metal oxide and metal nitride thin films |
| CN1733967A (en) * | 2004-03-12 | 2006-02-15 | 罗门哈斯公司 | Precursor compounds for deposition of ceramic and metal films and preparation methods thereof |
| CN101959843A (en) * | 2008-02-29 | 2011-01-26 | 雅宝公司 | Processes for producing transition metal amido and imido compounds |
| US20130196507A1 (en) * | 2012-01-31 | 2013-08-01 | Paul F. Ma | Method Of Depositing Metals Using High Frequency Plasma |
| US20150221550A1 (en) * | 2014-02-03 | 2015-08-06 | Tokyo Electron Limited | INTEGRATION OF ALD BARRIER LAYER AND CVD Ru LINER FOR VOID-FREE Cu FILLING |
| CN104975269A (en) * | 2014-04-04 | 2015-10-14 | 广东丹邦科技有限公司 | Tantalum-sourced precursor, preparation method of tantalum-sourced precursor and preparation method of TaN film resistance |
| CN106367730A (en) * | 2015-07-24 | 2017-02-01 | 气体产品与化学公司 | Methods for depositing group 13 metal or metalloid nitride films |
-
2020
- 2020-05-19 CN CN202010423502.0A patent/CN111440210A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6552209B1 (en) * | 2002-06-24 | 2003-04-22 | Air Products And Chemicals, Inc. | Preparation of metal imino/amino complexes for metal oxide and metal nitride thin films |
| CN1733967A (en) * | 2004-03-12 | 2006-02-15 | 罗门哈斯公司 | Precursor compounds for deposition of ceramic and metal films and preparation methods thereof |
| CN101959843A (en) * | 2008-02-29 | 2011-01-26 | 雅宝公司 | Processes for producing transition metal amido and imido compounds |
| US20130196507A1 (en) * | 2012-01-31 | 2013-08-01 | Paul F. Ma | Method Of Depositing Metals Using High Frequency Plasma |
| US20150221550A1 (en) * | 2014-02-03 | 2015-08-06 | Tokyo Electron Limited | INTEGRATION OF ALD BARRIER LAYER AND CVD Ru LINER FOR VOID-FREE Cu FILLING |
| CN104975269A (en) * | 2014-04-04 | 2015-10-14 | 广东丹邦科技有限公司 | Tantalum-sourced precursor, preparation method of tantalum-sourced precursor and preparation method of TaN film resistance |
| CN106367730A (en) * | 2015-07-24 | 2017-02-01 | 气体产品与化学公司 | Methods for depositing group 13 metal or metalloid nitride films |
Non-Patent Citations (1)
| Title |
|---|
| CHIU, HSIN-TIEN 等: "Syntheses and characterization of organoimido complexes of niobium(V); potential CVD precursors", 《JOURNAL OFTHE CHINESE CHEMICAL SOCIETY》 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113387980A (en) * | 2021-07-02 | 2021-09-14 | 合肥安德科铭半导体科技有限公司 | Preparation method and application of niobium-containing metal organic compound |
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