CN111427104A - Optical component and manufacturing method thereof - Google Patents
Optical component and manufacturing method thereof Download PDFInfo
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- CN111427104A CN111427104A CN201910023581.3A CN201910023581A CN111427104A CN 111427104 A CN111427104 A CN 111427104A CN 201910023581 A CN201910023581 A CN 201910023581A CN 111427104 A CN111427104 A CN 111427104A
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/11—Anti-reflection coatings
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Abstract
The present invention provides an optical component and a manufacturing method thereof, wherein the optical component comprises: the substrate is provided with an upper surface and a lower surface corresponding to the upper surface, a medium layer formed on the upper surface of the substrate in a graphical mode, and a barrier layer formed on the medium layer in a graphical mode. Through the improvement of the substrate, the interference influence of optical noise of 2-time and multiple reflection and refraction on normal signals can be reduced to a great extent, the signal-to-noise ratio of the optical element is further improved, and the accuracy and the stability of the element on signal processing are enhanced.
Description
Technical Field
The invention relates to the field of optics, in particular to a low-noise optical component and application thereof in the field of optics.
Background
At present, a metal film with high absorption, low transmission and low reflection is prepared on a flat glass substrate, and the metal film has a wide application prospect in the field of optics. As the signal-to-noise ratio of the optical circuit is higher, the control of the component noise is more important. However, in the existing optical element, there are 2 or more reflections and refractions at different interfaces of the optical path, and these reflected light signals can become background noise of normal signals, which affects the normal operation of other elements.
Therefore, how to reduce the interference effect of the 2-time and multiple-time reflected and refracted light noise on the normal signal is a technical problem to be solved urgently by those skilled in the art.
Disclosure of Invention
In view of the above-mentioned shortcomings of the prior art, the present invention aims to provide an optical component and a method for manufacturing the same, which can reduce the interference effect of 2-time and multiple-time reflected and refracted optical noise on normal signals, further improve the signal-to-noise ratio of the optical element, and enhance the accuracy and stability of the element in signal processing.
To achieve the above and other related objects, the present invention provides an optical member comprising: the substrate is provided with an upper surface and a lower surface corresponding to the upper surface, a medium layer formed on the upper surface of the substrate in a graphical mode, and a barrier layer formed on the medium layer in a graphical mode.
Optionally, the upper surface of the substrate is a patterned frosted surface.
Optionally, the substrate material includes, but is not limited to, glass.
Optionally, the material of the dielectric layer includes, but is not limited to, TiN, AlN, CrN, Ti, W.
Optionally, the thickness of the dielectric layer is greater than or equal to 10nm and less than or equal to 50 μm.
Optionally, the blocking layer at least comprises a high-reflectivity layer and a high-absorption low-reflectivity layer covering the high-reflectivity layer. The material of the high-reflection layer comprises but is not limited to Al, Ni, Ag, Cu and Sn, and the thickness of the high-reflection layer is more than or equal to 100nm and less than or equal to 100 mu m; the material of the high-absorption low-reflection layer comprises but is not limited to TiN, AlN, CrN, Ti and W, and the thickness is greater than or equal to 10nm and less than or equal to 50 mu m.
The present invention also provides a method of manufacturing an optical component as described in any of the above, comprising at least the steps of:
1) providing a substrate;
2) depositing a dielectric layer on the substrate;
3) depositing a barrier layer on the dielectric layer;
4) and selectively removing the barrier layer and the dielectric layer through photoetching and etching to obtain the optical component.
Optionally, the method further comprises a step of sanding the substrate in step 1) and a step of selectively removing the sanded surface in step 4).
Optionally, the dielectric layer in the method is prepared by a method including but not limited to physical vapor deposition, chemical vapor deposition or plasma chemical vapor deposition.
Alternatively, the barrier layer in the method can be prepared by a method including but not limited to physical vapor deposition, chemical vapor deposition or plasma chemical vapor deposition.
As mentioned above, the invention reduces the interference influence of the optical noise of 2 and multiple reflection and refraction on the normal signal to a great extent by the diffuse reflection effect formed on the frosted surface of the substrate and the reflected light absorption effect of the deposited dielectric layer, further improves the signal-to-noise ratio of the optical element, and enhances the accuracy and stability of the element on signal processing.
Drawings
Fig. 1 shows a transmission interferogram in the prior art.
FIG. 2 is a schematic diagram of the operation of an optical component according to the prior art
FIG. 3 is a schematic diagram of a substrate and a dielectric layer on the upper surface of the substrate according to one embodiment.
Fig. 4 is a schematic view illustrating the formation of a barrier layer on the surface of the dielectric layer in the first embodiment.
FIG. 5 is a schematic diagram illustrating the formation of a patterned dielectric layer and a barrier layer after photolithography and etching in accordance with one embodiment.
Fig. 6 is a schematic diagram illustrating the operation of the optical component according to the first embodiment.
Fig. 7 is a schematic view of a frosted substrate according to a second embodiment.
Fig. 8 is a schematic view illustrating a dielectric layer formed on an upper surface of a frosted substrate according to a second embodiment.
Fig. 9 is a schematic view illustrating the formation of a barrier layer on the surface of the dielectric layer in the second embodiment.
FIG. 10 is a schematic view showing a patterned substrate, a dielectric layer and a barrier layer formed by photolithography and etching in the second embodiment.
Fig. 11 is a schematic view showing the operation principle of the optical member according to the second embodiment.
Description of the element reference numerals
α incident angle
Angle of refraction theta
d thickness of glass
1' substrate
11' Upper surface of the substrate
12' lower surface of substrate
2' barrier layer
21' high reflection layer
22' high-absorption low-reflection layer
11 substrate
111 upper surface of substrate
112 lower surface of the substrate
12 dielectric layer
13 barrier layer
131 high reflection layer
132 high-absorption low-reflection layer
21 substrate
211 upper surface of the substrate
212 lower surface of the substrate
22 dielectric layer
23 Barrier layer
231 high reflection layer
232 high-absorption low-reflection layer
Detailed Description
In a conventional transmission-type optical member such as a lens or a display for transmitting light, incident light is reflected, refracted, or interfered at different interfaces, and as shown in fig. 1, when the incident light is incident into glass at an incident angle α, a refracted light ray AB is formed, and a reflected light ray BC and 2 times of reflected light rays CD are formed at the interface between the glass and air, and then the reflected light ray AB is emitted out of the glass.
According to the interference formula:
where σ is the optical path difference, d is the thickness of the glass substrate, nGlassWhen the incident angle α of the incident light satisfies the condition in the formula, the emergent light will generate interference phenomenon, thereby affecting the signal.
Specifically, as shown in fig. 2, when the incident light is incident on the optical component at a certain angle, the portion of the incident light incident on the barrier layer 2 'is absorbed, which is specifically performed in such a way that when the incident light 4 enters the surface of the high absorption/low reflection layer 22', a portion of the light is absorbed, as shown by the absorption light 4; part of the light is reflected by the high reflective layer 21 ', as shown by the reflected light 4, and the reflected light reenters the high absorption low reflective layer 21' and is absorbed again. The barrier layer 2' thus serves to absorb and prevent light from entering the substrate. When the incident light is transmitted to the bottom of the conventional substrate glass 1 ' at a certain angle, as shown in the figure, the incident light 1, the incident light 2 and the incident light 3, part of the light can be normally transmitted out of the substrate to form a normal signal 1, a normal signal 2 and a normal signal 3, and then reaches the processing circuit, but part of the light can be reflected to form reflected light, and the reflected light can reenter the view field between the bottom of the substrate and the surface of the processing circuit after being reflected by the upper surface 11 ' and transmitted by the lower surface 12 ' of the glass substrate, so as to become noise. At this time, if the incident angle satisfies a specific interference condition, interference occurs, which affects processing of the normal signal.
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
Please refer to fig. 3 to 11. It should be noted that the drawings provided in the present embodiment are only schematic and illustrate the basic idea of the present invention, and although the drawings only show the components related to the present invention and are not drawn according to the number, shape and size of the components in actual implementation, the form, quantity and proportion of the components in actual implementation may be changed arbitrarily, and the layout of the components may be more complicated.
Example one
As shown in FIGS. 3 to 6, the present embodiment provides an optical member and a method for manufacturing the same.
As shown in fig. 5, the present embodiment provides an optical component. The optical component includes: a substrate 11 provided with an upper surface 111 and a lower surface 112 corresponding to the upper surface; a patterned dielectric layer 12 formed on the upper surface of the substrate, and a patterned barrier layer 13 formed on the dielectric layer.
The technical solution of the present embodiment is further explained by the manufacturing process of the optical member.
As shown in fig. 3, step 1) is performed to provide a substrate 11, and a dielectric layer 12 is formed on the upper surface 111 of the substrate.
Optionally, the material of the substrate is a material with strong light transmittance, including but not limited to glass. The upper surface of the substrate may optionally be a mirror or frosted surface.
Optionally, the preparation method of the dielectric layer includes, but is not limited to, any one of physical vapor deposition, chemical vapor deposition, and plasma chemical vapor deposition. The material of the dielectric layer is a high-absorptivity and low-reflectivity material, including but not limited to TiN, AlN, CrN, Ti, W. The thickness of the dielectric layer is more than or equal to 10nm and less than or equal to 50 μm.
Specifically, in step 1), glass is selected as the substrate 11, and the upper surface 111 of the substrate is selected as a mirror surface. The substrate is used to provide support and attachment for structures located thereon and for optical transmission. The dielectric layer 12 is prepared by physical vapor deposition. The dielectric layer 12 is made of TiN, and the thickness of the dielectric layer is 200 nm. The medium layer is made of high-absorption and low-reflection materials and is used for optical absorption.
As shown in fig. 4, step 2) is performed to deposit a barrier layer 13 on the dielectric layer 12.
Optionally, the barrier layer comprises at least a high-reflectivity layer and a high-absorption low-reflectivity layer. The material of the high-reflection layer comprises but is not limited to Al, Ni, Ag, Cu and Sn, and the thickness of the high-reflection layer is greater than or equal to 100nm and less than or equal to 100 mu m.
The material of the high-absorption low-reflection layer comprises but is not limited to TiN, AlN, CrN, Ti and W, and the high-absorption low-reflection layer can be made of the same material as the dielectric layer or different materials from the dielectric layer. The thickness of the high-absorption low-reflection layer is more than or equal to 10nm and less than or equal to 50 mu m. Alternatively, the barrier layer may be prepared by a method including, but not limited to, physical vapor deposition, chemical vapor deposition, or plasma chemical vapor deposition.
Specifically, in step 2), firstly, a physical vapor deposition method is adopted, and an Al target is selected to deposit the high-reflection layer 131 on the surface of the dielectric layer. And depositing TiN on the surface of the high-reflection layer by adopting a chemical vapor deposition method to form the high-absorption low-reflection layer 132. The thickness of the high absorption low reflection layer 131 is 1 μm, and the thickness of the high reflection layer 132 is 5 μm. The barrier layer is used to absorb light and prevent light from entering the substrate.
As shown in fig. 5), step 3) is performed to partially expose the upper surface 111 of the substrate by photolithography and etching techniques, so as to form a patterned dielectric layer 12 and a barrier layer 13, thereby obtaining the optical component.
Specifically, in step 3), firstly, coating a photoresist on the surface of the barrier layer 13, then, exposing and developing the photoresist to form a patterned photoresist, then, performing an etching process, etching the barrier layer 13 and the dielectric layer 12 by using the patterned photoresist layer as a mask through a plasma etching technology, forming a required pattern on the glass substrate 11, and finally, removing the photoresist residue on the surface of the etched barrier layer to obtain the optical component.
The working principle of the optical component is shown in fig. 6. When the incident light enters the optical component at a certain angle, part of the incident light is transmitted out of the substrate 11 through the exposed area of the substrate to form a normal signal 1, a normal signal 2 and a normal signal 3, and the normal signals reach the processing circuit. But part of the reflected light is reflected by the lower surface 112 of the substrate, and when the reflected light passes through the upper surface 111 of the substrate, part of the reflected light enters the dielectric layer 12, is absorbed by the dielectric layer 12, and part of the reflected light is reflected to form 2 times of reflected light. Compared with the prior art, the medium layer 12 absorbs the reflected light, so that the reflected light for 2 times is reduced, the optical noise is reduced to a certain extent, the signal-to-noise ratio of the optical element is improved, and the accuracy of the element on signal processing is enhanced.
Example two
As shown in FIGS. 7 to 11, the present embodiment provides an optical member and a method for manufacturing the same.
As shown in fig. 10, the present embodiment provides an optical component. The optical component includes: the substrate 21 is provided with an upper surface 211, a lower surface 212 corresponding to the upper surface, a patterned dielectric layer 22 formed on the upper surface of the substrate, and a patterned barrier layer 23 formed on the dielectric layer.
The technical solution of the present embodiment is further explained by the manufacturing process of the optical member.
As shown in fig. 7, step 1) is performed to provide a substrate 21.
Optionally, the material of the substrate is a material with strong light transmittance, including but not limited to glass. The upper surface of the substrate may be a mirror surface or a frosted surface.
Specifically, in step 1), glass is selected as the substrate 21, and the upper surface 211 of the substrate is selected as a frosted surface. The thickness of the frosted surface is 1-90 μm. The frosted effect of the upper surface 211 of the substrate increases the diffuse reflection and reduces the 2-time reflected light.
As shown in fig. 8, step 2) is performed to form a dielectric layer 22 on the substrate 21.
Optionally, the preparation method of the dielectric layer includes, but is not limited to, any one of physical vapor deposition, chemical vapor deposition, and plasma chemical vapor deposition. The material of the dielectric layer is a high-absorptivity and low-reflectivity material, including but not limited to TiN, AlN, CrN, Ti, W. Specifically, the thickness of the dielectric layer is greater than or equal to 10nm and less than or equal to 50 μm, and in step 2), the dielectric layer 22 is prepared by a physical vapor deposition method. The dielectric layer is made of TiN, and the thickness of the film is 200 nm.
As shown in fig. 9, step 3) is performed to deposit a barrier layer 23 on the dielectric layer 22.
Optionally, the barrier layer comprises at least a high-reflectivity layer and a high-absorption low-reflectivity layer. The material of the high-reflection layer comprises but is not limited to Al, Ni, Ag, Cu and Sn, and the thickness of the high-reflection layer is greater than or equal to 100nm and less than or equal to 100 mu m. The material of the high-absorption low-reflection layer comprises but is not limited to TiN, AlN, CrN, Ti and W, and the high-absorption low-reflection layer can be made of the same material as the dielectric layer or different materials from the dielectric layer. The thickness of the high-absorption low-reflection layer is more than or equal to 10nm and less than or equal to 50 mu m.
Alternatively, the barrier layer may be prepared by a method including, but not limited to, physical vapor deposition, chemical vapor deposition, or plasma chemical vapor deposition.
Specifically, in step 2), firstly, a physical vapor deposition method is adopted, and an Al target is selected to deposit the high reflective layer 231 on the surface of the dielectric layer. And depositing TiN on the surface of the high-reflection layer by adopting a chemical vapor deposition method to form a high-absorption low-reflection layer 232. The thickness of the high absorption and low reflection layer 232 is 1 μm, and the thickness of the high reflection layer 231 is 5 μm. The barrier layer is used to absorb light and prevent light from entering the substrate.
As shown in fig. 10, step 3) is performed, the barrier layer, the dielectric layer and the frosted surface are selectively removed through photolithography and etching techniques, so that the planar portion of the upper surface 211 of the substrate is partially exposed, and the patterned dielectric layer 22, the barrier layer 23 and the glass substrate 21 are formed, thereby obtaining the optical component.
Specifically, in step 3), firstly, coating a photoresist on the surface of the barrier layer 23, then, exposing and developing the photoresist to form a patterned photoresist, then, performing an etching process, etching the frosted surface of the barrier layer 23, the dielectric layer 22 and the upper surface 211 of the substrate by using the patterned photoresist layer as a mask through a plasma etching technology, forming a required pattern on the glass substrate 21, and finally, removing the photoresist residue on the surface of the etched barrier layer to obtain the optical component.
The working principle of the optical component is shown in fig. 11. When the incident light enters the optical component at a certain angle, part of the incident light is transmitted out of the substrate 21 through the exposed area of the substrate to form a normal signal 1, a normal signal 2 and a normal signal 3, and the normal signals reach the processing circuit. But is partially reflected by the lower surface 212 of the substrate, and when the reflected light passes through the upper surface 211 of the glass substrate, part of the reflected light enters the dielectric layer 22 and is absorbed by the dielectric layer 22. Part of the reflected light is diffused and reflected by the frosted surface of the upper surface 211 of the substrate to form scattered light. Part of the reflected light is reflected by the upper surface 211 of the substrate to form 2 times of reflected light. Compared with the prior art and the first embodiment, the reflected light is absorbed by the high-absorption and low-reflection medium layer 22, and is scattered into light with random directions and optical path differences after being diffusely reflected by the frosted surface of the upper surface 211 of the substrate. Thus, the light rays satisfying the condition of forming interference with the normal signal are reduced, and the interference of the light rays transmitted to the normal signal can be greatly reduced or weakened.
In conclusion, the invention can reduce the interference influence of the light noise of 2 and multiple reflections and refractions on normal signals to a great extent by the diffuse reflection effect formed on the frosted surface of the substrate and the reflected light absorption effect of the deposited dielectric layer, further improve the signal-to-noise ratio of the optical element and enhance the accuracy and stability of the element on signal processing.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (10)
1. An optical component, characterized in that the optical component comprises: the substrate is provided with an upper surface and a lower surface corresponding to the upper surface, a medium layer formed on the upper surface of the substrate in a graphical mode, and a barrier layer formed on the medium layer in a graphical mode.
2. An optical component in accordance with claim 1 wherein the upper surface of the substrate is a patterned frosted surface.
3. An optical component in accordance with claim 1 wherein the material of the substrate includes, but is not limited to, glass.
4. An optical component according to claim 1 wherein the material of the dielectric layer includes but is not limited to TiN, AlN, CrN, Ti, W.
5. The optical member according to claim 1, wherein the dielectric layer has a thickness of 10nm or more and 50 μm or less.
6. The optical component of claim 1, wherein the blocking layer comprises at least a high-reflectivity layer and a high-absorption low-reflectivity layer overlying the high-reflectivity layer. The material of the high-reflection layer comprises but is not limited to Al, Ni, Ag, Cu and Sn, and the thickness of the high-reflection layer is more than or equal to 100nm and less than or equal to 100 mu m; the material of the high-absorption low-reflection layer comprises but is not limited to TiN, AlN, CrN, Ti and W, and the thickness is greater than or equal to 10nm and less than or equal to 50 mu m.
7. A method for manufacturing an optical member according to claims 1 to 6, comprising at least the steps of:
1) providing a substrate;
2) depositing a dielectric layer on the substrate;
3) depositing a barrier layer on the dielectric layer;
4) and selectively removing the barrier layer and the dielectric layer through photoetching and etching to obtain the optical component.
8. The method of claim 7, wherein the step 1) further comprises the step of sanding the substrate, and the step 4) further comprises the step of selectively removing the sanded surface.
9. The method of claim 7, wherein the dielectric layer is prepared by a method including but not limited to physical vapor deposition, chemical vapor deposition, or plasma chemical vapor deposition.
10. The method of claim 7, wherein the barrier layer is formed by a process including, but not limited to, physical vapor deposition, chemical vapor deposition, or plasma chemical vapor deposition.
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| CN201910023581.3A CN111427104B (en) | 2019-01-10 | 2019-01-10 | Optical component and manufacturing method thereof |
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| CN201910023581.3A CN111427104B (en) | 2019-01-10 | 2019-01-10 | Optical component and manufacturing method thereof |
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| CN111427104B CN111427104B (en) | 2022-09-27 |
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