CN111426450A - Resonant cavity enhanced monolithic integrated sensor and measurement method - Google Patents
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Abstract
The invention discloses a monolithic integrated sensor with enhanced resonant cavity and a measuring method, wherein the sensor comprises a resonant cavity, a two-dimensional material layer, an electrode, an insulating cladding, a coupler, a monochromatic laser, a photoelectric detector, a waveguide, an insulating layer and a substrate layer; the insulating cladding layer and the two-dimensional material layer are sequentially positioned above the resonant cavity from bottom to top, the insulating layer and the substrate layer are sequentially positioned below the resonant cavity from top to bottom, and the waveguide and the resonant cavity are positioned on the same layer and positioned on one side of the resonant cavity; the said electrode has two, one is located on waveguide, another is located on two-dimentional material layer, the said coupler is placed in both ends of the waveguide, said monochromatic laser and photodetector connect the coupler separately. The sensor can be used for detecting the change of the refractive index of the waveguide environment caused by biochemical molecules on a chip or used for detecting the absorption spectrum of the biochemical molecules on the chip.
Description
Technical Field
The invention relates to the technical field of integrated optics, in particular to a monolithic integrated sensor with enhanced resonant cavity and a measuring method.
Background
Graphene-silicon based integrated optical circuits have received much attention over the last few years due to the advantages of CMOS compatible fabrication processes and low power consumption. On one hand, the light transmitted in the waveguide interacts with the graphene integrated on the surface of the waveguide through an evanescent field, and the defect that the absorption of single-layer graphene to the vertical incident light is weak is overcome. On the other hand, the Fermi level of the graphene is changed through an external electric field, so that the intensity and the phase of light transmitted in the waveguide can be adjusted, and the optical field modulation is realized. Therefore, graphene-silicon based integrated optical circuits are widely used to develop on-chip integrated electro-optical modulators, photodetectors and sensors.
In addition, in the mid-infrared spectrum range, the biochemical molecules absorb photons to realize intrinsic vibration energy level transition, and the method has wide application in the field of biochemical molecule sensing. Further, by combining with a silicon-based photonics technology, the size, cost and energy consumption of biochemical molecule sensing can be greatly reduced. The silicon-based integrated biochemical molecular sensor can be integrated with other on-chip electronic elements to realize further signal processing and communication, and has a very wide application prospect. At present, the micro-ring resonant cavity plays an important role in a silicon-based integrated optical biochemical molecular sensor. In previous studies, to measure the micro-ring cavity, we generally required the use of a tunable mid-infrared laser or infrared spectrometer. However, such instruments are bulky and difficult to integrate on a chip, thus limiting the application of the micro-ring resonator to monolithically integrated sensors.
The research is widely carried out by researchers aiming at the intermediate infrared micro-ring resonant cavity and the application thereof in the aspect of biochemical molecule sensing. In the thesis, 2008, university of cornell, Jacob t.robinson et al, usa, studied a system on chip (Optics Express,16,6,4296) using silicon micro-ring resonator for gas composition and pressure detection at room temperature, measuring the shift of resonance wavelength due to both acetylene gas and pressure. 2012, university of Barli, ItalyViterio M.N. Passaro et al studied a design method of a photonic gas sensor based on mid-infrared vernier effect (Sensorand initiators B: Chemical,168,402,2012), analyzed a design method based on multiple micro-ring resonators, and reached a detector sensitivity of 10 within the mid-infrared operating wavelength range5nm/RIU, detection lower limit is 10-5In 2015, Von Giese et al, at Shanghai science and Technology university, studied a T-shaped suspended silicon nitride ring resonator (IEEE Photonics technologies L ets, 27,15,1601) for optical sensing that enhances the effect of waveguide propagating light and gas.
In the patent aspect, in 2017, royal culmination of electronic technology university, and the like, a silicon-based one-dimensional photonic crystal-based micro-ring photonic biosensor is designed, the biosensor detects the change information of the solution refractive index and concentration by etching a one-dimensional photonic crystal on a micro-ring resonant cavity and measuring the change of the relative distance between two split peaks, and a Chinese invention patent is applied (201710873081. X). In 2017, Zheng billow et al at Jilin university designed a mid-infrared double-slit waveguide micro-ring resonant cavity spectroscopic gas sensor and a use method thereof, and applied for a Chinese invention patent (201711155633. X). 2018, Zhang et al, Tianjin university, designed a micro-ring resonator structure capable of realizing dual sensing applications, wherein the micro-ring resonator structure can simultaneously measure changes in refractive index of the surrounding environment and the load on the resonator, can obtain the influence of changes in refractive index or pressure single factor on the shift of resonant wavelength, can be applied to biosensing of photonic devices, and applied for Chinese patent (201810286602.6). However, in the above patents relating to microring resonators, measuring the characteristics of the microring resonator using a single wavelength laser and implementing sensing applications are also not implemented.
In summary, although the measurement method and application of the micro-ring resonator have been widely studied, due to the volume limitation of the test instrument, monolithic integration is difficult to achieve, and the application of the micro-ring resonator in the aspect of the sensor is limited to a certain extent.
Disclosure of Invention
The invention aims to overcome the defects in the prior art and provides a resonant cavity enhanced monolithic integrated sensor and a measurement method.
The purpose of the invention is realized by the following technical scheme:
a monolithic integrated sensor with enhanced resonant cavity comprises a resonant cavity, a two-dimensional material layer, an electrode, an insulating cladding, a coupler, a monochromatic laser, a photoelectric detector, a waveguide, an insulating layer and a substrate layer; the insulating cladding layer and the two-dimensional material layer are sequentially positioned above the resonant cavity from bottom to top, the insulating layer and the substrate layer are sequentially positioned below the resonant cavity from top to bottom, and the waveguide and the resonant cavity are positioned on the same layer and positioned on one side of the resonant cavity; the two electrodes are arranged, one of the two electrodes is positioned on the waveguide, the other one of the two electrodes is positioned on the two-dimensional material layer, the couplers are arranged at two ends of the waveguide, and the monochromatic laser is connected with the coupler at one end of the waveguide; the photoelectric detector is connected with the coupler at the other end of the waveguide.
Furthermore, the resonant cavity is composed of one or more of a micro-ring resonant cavity, a micro-disk resonant cavity and a photonic crystal resonant cavity.
Further, the two-dimensional material layer is composed of one or more of graphene, transition metal sulfide and black scale, and the two-dimensional material layer is a single-layer material, a multi-layer material or a heterojunction material.
Further, the coupler is an end face coupler or a grating coupler.
Further, the monochromatic laser is a visible light band laser with the wavelength of 0.3-0.8 micrometer, a near infrared band laser with the wavelength of 0.8-2 micrometers, or a mid-infrared band laser with the wavelength of 2-20 micrometers.
Furthermore, the material of the waveguide is composed of one of silicon, germanium, silicon-germanium mixture, silicon nitride, indium phosphide, gallium arsenide and lithium niobate.
The invention provides another technical scheme as follows: a measuring method of a resonant cavity enhanced monolithic integrated sensor is characterized in that an external electric field changes the Fermi level of a two-dimensional material layer through an electrode, and changes the dielectric constant characteristic of the two-dimensional material layer, so that the resonant wavelength of a resonant cavity is moved; and finally, calculating the quality factor, the extinction ratio and the shift of the resonance peak along with the change of the external environment by utilizing the relation between the effective refractive index of the waveguide and the Fermi level.
Furthermore, the Fermi level of the two-dimensional material in the two-dimensional material layer works at more than one half of the energy of incident light photons, so that when the resonance wavelength of the resonant cavity is regulated and controlled by an external electric field, the quality factor and the extinction ratio of the resonant cavity are slightly influenced by the change of the external electric field, and the quality factor and the extinction ratio of the resonant cavity are ensured not to change in the sampling process.
Compared with the prior art, the technical scheme of the invention has the following beneficial effects:
(1) the sensor and the measuring method improve the integration level of the system. The micro-ring resonator is tested by adopting the single-wavelength laser and the detector integrated on the chip and utilizing the characteristic that the relative dielectric constant of the graphene is changed along with an external electric field, and the change of the resonant wavelength along with the external environment can be obtained simultaneously.
(2) The invention can realize low energy consumption and high speed measurement and application. The Fermi level of the graphene is controlled by adjusting the voltage of the external electric field, so that the measurement and application of the micro-ring resonant cavity are realized, and the energy consumption and the heat are low. Meanwhile, the graphene has great carrier mobility, and high-speed measurement and sensing application can be realized.
(3) The manufacturing process of the device is compatible with the existing CMOS process, and is beneficial to realizing large-scale mass production of the device.
(4) The invention breaks through the limitation of using a tunable intermediate infrared laser or an infrared spectrometer to measure the resonator, greatly reduces the cost of single chip integration, and promotes the application of the resonant cavity in the aspect of a single chip integrated sensor.
Drawings
Fig. 1 is a schematic structural diagram of a resonant cavity enhanced monolithic integrated sensor according to the present invention.
Fig. 2 is a schematic structural diagram of a cross section of a graphene-silicon-based waveguide according to the present invention.
Fig. 3a to 3g are normalized transmission spectra of the micro-ring resonator under the condition that the fermi level of the graphene is 0.31, 0.34, 0.37, 0.40, 0.43, 0.46 and 0.49eV in embodiment 1 of the present invention.
Fig. 4 is a graph showing the normalized transmittance of the micro-ring resonator at different fermi levels obtained by sampling in embodiment 1 of the present invention.
Fig. 5a to 5g are normalized transmission spectra of the micro-ring resonator under the condition that the fermi level of the graphene is 0.31, 0.34, 0.37, 0.40, 0.43, 0.46 and 0.49eV in embodiment 2 of the present invention.
Fig. 6 shows the normalized transmittance of the micro-ring resonator at different fermi levels obtained by sampling in embodiment 2 of the present invention.
Detailed Description
The invention is described in further detail below with reference to the figures and specific examples. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
9. As shown in fig. 1 and fig. 2, the present invention provides a resonant cavity enhanced monolithic integrated sensor, which includes a resonant cavity 1, a two-dimensional material layer 2, an electrode 3, an insulating cladding 4, a coupler 5, a monochromatic laser 6, a photodetector 7, a waveguide 8, an insulating layer 9, and a substrate layer 10; the insulating cladding 4 and the two-dimensional material layer 2 are sequentially positioned above the resonant cavity 1 from bottom to top, the insulating layer 9 and the substrate layer 10 are sequentially positioned below the resonant cavity 1 from top to bottom, and the waveguide 8 and the resonant cavity 1 are positioned on the same layer and positioned on one side of the resonant cavity 1; the two electrodes 3 are arranged, one of the two electrodes is positioned on the waveguide 8, the other electrode is positioned on the two-dimensional material layer 2, the couplers 5 are arranged at two ends of the waveguide 8, and the monochromatic laser 6 and the photoelectric detector 7 are respectively connected with the couplers 5.
The sensor can be used for detecting the change of the waveguide environment refractive index caused by biochemical molecules on a chip and can also be used for detecting the absorption spectrum of the biochemical molecules on the chip.
The measuring method of the resonant cavity enhanced monolithic integrated sensor comprises the following steps: the Fermi level of the two-dimensional material layer is changed through the electrodes by an external electric field, the dielectric constant characteristic of the two-dimensional material layer is changed, the resonant wavelength of the resonant cavity is moved, further, the resonant peak is sampled under the same wavelength, and finally, the quality factor, the extinction ratio and the shift of the resonant peak along with the change of an external environment are calculated by utilizing the relation between the effective refractive index of the waveguide and the Fermi level. The Fermi energy level of the two-dimensional material works at more than one half of the incident light photon energy, so that when the resonance wavelength of the resonant cavity is regulated and controlled by the external electric field, the quality factor and the extinction ratio of the resonant cavity are hardly influenced by the change of the external electric field, and the quality factor and the extinction ratio of the resonant cavity are ensured not to change in the sampling process.
To illustrate the proposed technique, the relative dielectric constant of graphene is first theoretically calculated as follows:
where d is the thickness of the graphene sheet,0the dielectric constant of the vacuum, ω is the optical frequency, σ is the optical conductivity of the graphene, and i is the imaginary unit. In the case of the fermi level of 0.24eV, the real part and the imaginary part of the relative dielectric constant of graphene are mutated. Continuing to increase the fermi level, the imaginary part of the relative permittivity of graphene approaches zero, while the real part remains reduced. This indicates that after mutation, the fermi level of the graphene works at more than one half of the incident light photon energy, and therefore, when the resonance wavelength of the resonant cavity is regulated by the external electric field, the quality factor and extinction ratio of the resonant cavity are slightly affected by the change of the external electric field. Based on the characteristic, the resonance wavelength of the silicon waveguide micro-ring resonator can be changed by adjusting the Fermi level of the graphene on the premise of not changing the extinction ratio and the quality factor of the resonator. Thus, properties of the micro-ring resonator can be measured using the proposed technique.
Further, the detailed principles of quality factors, extinction ratios and resonant wavelength shifts of the silicon waveguide micro-ring resonant cavity are extracted. First, the quality factor Q of the micro-ring resonator is as follows:
wherein, Δ λFWHMIs the half-height width, lambda, of the transmission spectrum of the micro-ring resonant cavitynIs an n-order resonance wavelength, and can be obtained by the following formula,
where L is the length of the resonator, neffIs the effective refractive index of graphene-on-silicon waveguides. After derivation of the fermi level of the graphene, the following relationship can be obtained,
according to the equations (2) and (4), the quality factor of the micro-ring resonator can be expressed by the following relationship,
wherein, Δ FFWHMIs the full width at half maximum of the transmittance-fermi level relationship,
is the relationship between the effective refractive index of the graphene-silicon based waveguide and the fermi level. And secondly, the extinction ratio of the micro-ring resonant cavity is consistent with the extinction ratio of a transmittance-Fermi energy level relation curve. Finally, from equation (4), the resonance wavelength shift can be calculated as follows,
where Δ F is the amount of change in the fermi level. Therefore, after the transmittance-Fermi level relation curve of the graphene-silicon-based waveguide integrated micro-ring resonant cavity is obtained, parameters such as a quality factor, an extinction ratio and a resonant wavelength displacement of the micro-ring resonant cavity can be extracted from the transmittance-Fermi level relation curve.
The monolithic integrated sensor with enhanced resonant cavity shown in fig. 1 is manufactured by the following method: firstly, a waveguide 8 is designed based on a commercial silicon-on-insulator (SOI) wafer and is manufactured on an insulating layer 9 and a substrate layer 10 by adopting a nano-processing method; then, the insulating cladding 4 is manufactured on the chip by adopting a chemical vapor deposition method; next, the two-dimensional material layer 2, i.e., the graphene layer, is fabricated on the insulating clad layer by a nano-fabrication method.
Example 1
As shown in fig. 2, the graphene-silicon-based waveguide has the following structural parameters: the silicon-on-insulator (SOI) wafer has a top silicon layer with a thickness of 340nm and a buried oxide layer with a thickness of 2 μm, the waveguide is a ridge waveguide, the waveguide width is 1 μm, the etching depth is 240nm, and the buried oxide layer at the lower part of the waveguide is etched away by hydrofluoric acid solution to reduce the absorption of mid-infrared light. According to theoretical calculations, the waveguide structure described above can support propagation of the fundamental mode of infrared light in the 2.75 μm wavelength. In a specific embodiment, a micro-ring resonator with a radius of 25 μm is used, the thickness of the alumina insulating cladding is 50nm, and the coupling coefficient of the micro-ring resonator is 0.98. Respectively adjusting the Fermi level of the graphene to be 0.31, 0.34, 0.37, 0.40, 0.43, 0.46 and 0.49eV to obtain waveguide effective refractive indexes of 2.479113, 2.478871, 2.478664, 2.478477, 2.478307, 2.47814 and 2.477984; the optical losses are 2.573984E-03 dB/mum, 2.469668E-03 dB/mum, 2.413759E-03 dB/mum, 2.380997E-03 dB/mum, 2.360272E-03 dB/mum, 2.347314E-03 dB/mum and 2.339580E-03 dB/mum respectively. Depending on the effective index of the waveguide, the optical losses and the matrix propagation equation,
wherein α is the in-loop attenuation factor, t is the amplitude transmittance, θ is the phase change around the loop, ΦtFor phase shift of the coupling region, θ + ΦtM2 pi, m being an integer. Can countAnd calculating to obtain normalized transmission spectra of the micro-ring resonant cavity under different graphene Fermi energy levels, as shown in FIGS. 3a to 3 g. From the transmission spectrum of the micro-ring resonator, the Q value and the extinction ratio of the micro-ring resonator can be measured to be 11600 and 41.29dB, respectively. The normalized transmission line was then sampled and measured using a single wavelength mid-infrared laser and detector at a wavelength of 2.7036 μm and the data was fitted using the Lorentzian function in the mapping software (origin), as shown in FIG. 4. The measurement results are: in the transmittance-fermi level relationship curve, the full width at half maximum of the curve was 0.035eV, and the extinction ratio was 41.33 dB. In addition, it was calculated that the rate of change of the waveguide effective refractive index with the fermi level in the above waveguide structure was 0.0062eV-1And according to the formula (5), calculating to obtain the Q value and the extinction ratio of the micro-ring resonant cavity which are 11400 and 41.33dB respectively, and the Q value and the extinction ratio are consistent with the measurement result in the transmission spectrum of the micro-ring resonant cavity.
Example 2
As shown in fig. 2, the graphene-silicon-based waveguide has the following structural parameters: the silicon-on-insulator (SOI) wafer has a top silicon layer with a thickness of 340nm and a buried oxide layer with a thickness of 2 μm, the waveguide is a ridge waveguide, the waveguide width is 1 μm, the etching depth is 240nm, and the buried oxide layer at the lower part of the waveguide is etched away by hydrofluoric acid solution to reduce the absorption of mid-infrared light. According to theoretical calculations, the waveguide structure described above can support propagation of the fundamental mode of infrared light in the 2.75 μm wavelength. In a specific embodiment, a micro-ring resonator with a radius of 25 μm is used, the thickness of the alumina insulating cladding is 50nm, and the coupling coefficient of the micro-ring resonator is 0.98. Respectively adjusting the Fermi level of the graphene to be 0.31, 0.34, 0.37, 0.40, 0.43, 0.46 and 0.49eV to obtain waveguide effective refractive indexes of 2.479183, 2.478941, 2.478734, 2.478547, 2.478377, 2.47821 and 2.478054; the optical losses are 5.573984E-03 dB/mum, 5.469668E-03 dB/mum, 5.413759E-03 dB/mum, 5.380997E-03 dB/mum, 5.360272E-03 dB/mum, 5.347314E-03 dB/mum and 5.339580E-03 dB/mum respectively. Based on the resulting waveguide effective index and optical loss and the matrix propagation equation,
wherein α is the in-loop attenuation factor, t is the amplitude transmittance, θ is the phase change around the loop, ΦtFor phase shift of the coupling region, θ + ΦtM2 pi, m being an integer. Normalized transmission spectra of the micro-ring resonator under different graphene fermi levels can be calculated, as shown in fig. 5a to 5 g. From the transmission spectrum of the micro-ring resonator, the Q value and the extinction ratio of the micro-ring resonator can be measured to be 8000 and 8.03dB respectively. The normalized transmission line was then sampled and measured using a single wavelength mid-infrared laser and detector at a wavelength of 2.7036 μm and the data was fitted using the Lorentzian function in the mapping software (origin), as shown in FIG. 4. The measurement results are: in the transmittance-fermi level relationship curve, the full width at half maximum of the curve is 0.052eV, and the extinction ratio is 7.98 dB. In addition, it was calculated that the rate of change of the waveguide effective refractive index with the fermi level in the above waveguide structure was 0.0062eV-1And calculating to obtain the Q value and the extinction ratio of the micro-ring resonant cavity of 7700 dB and 7.98dB respectively according to the formula (5), wherein the Q value and the extinction ratio are consistent with the measurement result in the transmission spectrum of the micro-ring resonant cavity. In addition, by comparing the characteristic curves of fig. 3a to 3g and fig. 5a to 5g, it can be obtained that the resonance wavelength changes from 2.70429 μm to 2.70437 μm and the wavelength shifts to 0.080 μm when the graphene fermi level is 0.31 eV. According to the fitted figure 4, figure 6 and formula (6), the resonance wavelength shift of the two resonators in example 1 and example 2 is calculated to be 0.085 μm, which is consistent with the measurement result in the transmission spectrum of the micro-ring resonator.
Finally, the method of the above embodiments is only a preferred embodiment, and is not intended to limit the scope of the present invention. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
The present invention is not limited to the above-described embodiments. The foregoing description of the specific embodiments is intended to describe and illustrate the technical solutions of the present invention, and the above specific embodiments are merely illustrative and not restrictive. Those skilled in the art can make many changes and modifications to the invention without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (8)
1. A resonant cavity enhanced monolithic integrated sensor is characterized by comprising a resonant cavity (1), a two-dimensional material layer (2), an electrode (3), an insulating cladding (4), a coupler (5), a monochromatic laser (6), a photoelectric detector (7), a waveguide (8), an insulating layer (9) and a substrate layer (10); the insulating cladding layer (4) and the two-dimensional material layer (2) are sequentially positioned above the resonant cavity (1) from bottom to top, the insulating layer (9) and the substrate layer (10) are sequentially positioned below the resonant cavity (1) from top to bottom, and the waveguide (8) and the resonant cavity (1) are positioned on the same layer and positioned on one side of the resonant cavity (1); the two electrodes (3) are arranged, one of the two electrodes is positioned on the waveguide (8), the other electrode is positioned on the two-dimensional material layer (2), the couplers (5) are arranged at two ends of the waveguide (8), and the monochromatic laser (6) is connected with the coupler (5) at one end of the waveguide (8); the photoelectric detector (7) is connected with the coupler (5) at the other end of the waveguide (8).
2. The monolithic sensor with enhanced resonant cavity according to claim 1, wherein the resonant cavity (1) is formed by one or more of a micro-ring resonant cavity, a micro-disk resonant cavity and a photonic crystal resonant cavity.
3. The monolithic resonator-enhanced sensor according to claim 1, wherein the two-dimensional material layer (2) is made of one or more of graphene, transition metal sulfide and black scale, and the two-dimensional material layer (2) is a single-layer material, a multi-layer material or a heterojunction material.
4. A resonator-enhanced monolithically integrated sensor according to claim 1, wherein said coupler (5) is an end-face coupler or a grating coupler.
5. The monolithic sensor as claimed in claim 1, wherein said monochromatic laser (6) is a visible band laser with a wavelength of 0.3-0.8 microns, a near infrared band laser with a wavelength of 0.8-2 microns, or a mid infrared band laser with a wavelength of 2-20 microns.
6. The monolithically integrated sensor of claim 1, wherein the material of the waveguide (8) is one of silicon, germanium, a silicon-germanium mixture, silicon nitride, indium phosphide, gallium arsenide, and lithium niobate.
7. A measuring method of a resonant cavity enhanced monolithic integrated sensor is characterized in that an external electric field changes the Fermi level of a two-dimensional material layer (2) through an electrode (3), and changes the dielectric constant characteristic of the two-dimensional material layer (2), so that the resonant wavelength of a resonant cavity (1) is moved; and finally, calculating the quality factor, the extinction ratio and the shift of the resonance peak along with the change of the external environment by utilizing the relation between the effective refractive index of the waveguide and the Fermi level.
8. The method according to claim 8, wherein the fermi level of the two-dimensional material in the two-dimensional material layer (2) is at least half of the energy of the incident photons, so that when the resonance wavelength of the resonant cavity (1) is adjusted by the external electric field, the quality factor and extinction ratio of the resonant cavity are not significantly affected by the change of the external electric field.
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