CN111416037A - Method for enhancing magnetic regulation and control of sunlight on metal film by using buffer layer - Google Patents
Method for enhancing magnetic regulation and control of sunlight on metal film by using buffer layer Download PDFInfo
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- CN111416037A CN111416037A CN202010247202.1A CN202010247202A CN111416037A CN 111416037 A CN111416037 A CN 111416037A CN 202010247202 A CN202010247202 A CN 202010247202A CN 111416037 A CN111416037 A CN 111416037A
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- H—ELECTRICITY
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/024—Deposition of sublayers, e.g. to promote adhesion of the coating
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/20—Metallic material, boron or silicon on organic substrates
- C23C14/205—Metallic material, boron or silicon on organic substrates by cathodic sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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Abstract
A method for enhancing the magnetic regulation and control of sunlight on a metal film by using a buffer layer comprises the following steps: step 1, preparing a film; step 2, spin coating/depositing a buffer layer; step 3, spin coating of the photovoltaic active layer: spin coating the selected photovoltaic active layer on the buffer layer; step 4, growing an electrode: preparing a top electrode of the device; and 5, regulating and controlling by using sunlight. The method for increasing the regulation and control quantity of the sunlight regulation and control metal film by inserting the buffer layer is suitable for other visible light sources, the sunlight belongs to renewable energy sources, the energy consumption and the cost are greatly reduced, and the increase of the regulation and control quantity provides possibility for practical application.
Description
Technical Field
The invention belongs to the technical field of magnetic regulation and control, and particularly relates to a method for enhancing the magnetic regulation and control of sunlight on a metal film by using a buffer layer.
Background
The existing technology for regulating and controlling the ferromagnetic resonance field of the metal film is generally realized by means of a magnetic field generated by current, applied voltage and high-energy light beams. The current generated magnetic field is high in regulation and control energy consumption and large in size, is difficult to be compatible with a miniaturized device, generates joule heat to damage the device, and the temperature of the device can possibly rise to the Curie temperature of a ferromagnetic material, so that the device cannot work. The applied voltage is regulated and controlled by using strain as a medium through a piezoelectric material (such as PMN-PT), the voltage is high, the integration difficulty is high, and the energy consumption is high; the small voltage is applied and regulated by the ionic liquid, chemical reaction is generated, and the device is corroded. High energy beams (e.g., laser, pulsed, polarized) can generate large amounts of heat that can destabilize the device, affect adjacent magnetic domains for the memory device, and affect accuracy.
Sunlight is a renewable energy source which is concerned about, the regulation and control of the magnetism of the metal film by utilizing visible light such as sunlight and the like is a purely physical method, low energy consumption can be realized, the device cannot be corroded, and the device can be compatible with miniaturization of the device.
At present, a ferromagnetic resonance field of a sunlight-regulated metal film utilizes the relevant principle of an organic solar cell, visible light irradiates a luminescent layer to generate electrons, the electrons enter a metal film layer to occupy unpaired orbital energy level, the Fermi energy level is changed to further change the magnetism, and the problems of scattering, dissipation, too small difference of work functions of a cathode and an anode and the like exist, so that the number of the electrons entering the metal film layer is too small, the regulation amount is too small, and the regulation amount is urgently needed to be increased to pave a way for practical application.
Disclosure of Invention
The invention aims to provide a method for enhancing the magnetic regulation and control of sunlight on a metal film by using a buffer layer so as to solve the problems.
In order to achieve the purpose, the invention adopts the following technical scheme:
a method for enhancing the magnetic regulation and control of sunlight on a metal film by using a buffer layer comprises the following steps:
step 3, spin coating of the photovoltaic active layer: spin coating the selected photovoltaic active layer on the buffer layer;
step 4, growing an electrode: preparing a top electrode of the device;
and 5, regulating and controlling by using sunlight.
Further, in step 1, the substrate is: one of silicon, silica or mica; the film structure is as follows: Co/Ta/substrate or CoFe/Ta/substrate, wherein the thickness of CoFe is 1.1nm or 1.2nm, the thickness of Co is 0.9nm or 1nm, and the thickness of Ta is 4 nm; CoFe or Co can be replaced with FeCoB or NiFe.
Further, in step 1, the substrate to be used needs to be immersed in 99% acetone for cleaning for 10min in an ultrasonic oscillator with power of 90 w; then immersing the substrate in 99% alcohol in an ultrasonic oscillator with power of 90w for cleaning for 10 min; finally, the glass is immersed in deionized water in an ultrasonic oscillator with power of 90w for cleaning for 10min and dried by using an air gun.
Furthermore, in the step 2, the buffer layer material is one of ZnO, Ba, L iF or Ca.
Further, in the step 2, the solution is spin-coated, 15 mu L of the solution is taken, spin-coating is carried out by using a spin coater at 2000rpm to obtain a buffer layer, and the solid is magnetron sputtered to obtain a film with the thickness of 3nm to 10 nm.
Further, in the step 3, the photovoltaic active layer is one of P3HT, PC61BM, PTB7-Th, PC71BM, P-DTS (FBTTH2)2, PC71BM, PTB 7-Th; spin coating speed: 1500rpm, the thickness of the photovoltaic active layer is 70 nm; and (3) placing the sample on which the photovoltaic active layer is coated for 10-15 hours to make the sample uniform and dry.
Further, in step 4, one of Pt or Au as the top electrode material; the electrode was prepared using a magnetron sputtering method.
Further, in step 5, a simulated sunlight lamp or other visible light is used for regulation and control.
Compared with the prior art, the invention has the following technical effects:
the method for increasing the regulation and control quantity of the sunlight regulation and control metal film is suitable for other visible light sources, the sunlight belongs to renewable energy sources, the energy consumption and the cost are greatly reduced, the increase of the regulation and control quantity provides possibility for practical application, and meanwhile, the regulation and control device is simple and easy to integrate and can be compatible with the existing miniaturized device. In addition, the method has the advantages of simple process, easy operation and excellent regulation effect.
The cathode buffer layer is inserted into the spin electronic device regulated by sunlight to enable more electrons to enter the metal film layer, and the regulation amount of the ferromagnetic resonance field is increased.
Drawings
FIG. 1 is a diagram of the device structure of the present invention;
FIG. 2 is a graph of experimental data for a control group of the present invention;
FIG. 3 is a graph of experimental data for the present invention;
FIG. 4 is a graph comparing experimental data of the control group and the experimental group.
Detailed Description
The invention is further described below with reference to the accompanying drawings:
referring to fig. 1 to 4, a method for enhancing the magnetic control of sunlight on a metal film by using a buffer layer includes the following steps:
Step 3, spin coating of the photovoltaic active layer: spin coating the selected photovoltaic active layer on the buffer layer;
step 4, growing an electrode: preparing a top electrode of the device;
and 5, regulating and controlling by using sunlight.
The substrate in step 1 is: one of silicon, silica or mica; the film structure is as follows: Co/Ta/substrate or CoFe/Ta/substrate, wherein the thickness of CoFe is 1.1nm or 1.2nm, the thickness of Co is 0.9nm or 1nm, and the thickness of Ta is 4 nm; CoFe or Co can be replaced with FeCoB or NiFe.
In the step 1, the used substrate needs to be immersed in 99% acetone in an ultrasonic oscillator with power of 90w for cleaning for 10 min; then immersing the substrate in 99% alcohol in an ultrasonic oscillator with power of 90w for cleaning for 10 min; finally, the glass is immersed in deionized water in an ultrasonic oscillator with power of 90w for cleaning for 10min and dried by using an air gun.
The buffer layer material in the step 2 is one of ZnO, Ba, L iF or Ca, and the material is characterized by being capable of transmitting electrons to enable more electrons to enter the metal film layer, blocking holes, reducing the recombination of hole electrons, improving the surface appearance of the photovoltaic active layer and the metal film material, reducing dissipation, increasing photoelectric conversion efficiency and generating more photoelectrons.
In the step 2, the solution is spin-coated, 15 mu L of the solution is taken, spin-coating is carried out by using a spin coater at 2000rpm to obtain a buffer layer, and the solid is subjected to magnetron sputtering to obtain a 3nm film.
In the step 3, the photovoltaic active layer is one of P3HT, PC61BM, PTB7-Th, PC71BM, P-DTS (FBTTH2)2, PC71BM and PTB 7-Th; spin coating speed: 1500rpm, the thickness of the photovoltaic active layer is 70 nm; the sample spin-coated with the photovoltaic active layer was left to stand for 10 hours to be uniform and dried.
In step 4, one of Pt or Au is taken as a top electrode material; the electrode was prepared using a magnetron sputtering method.
And 5, regulating and controlling by using a simulated sunlight lamp or other visible lights.
Example 1
Referring to fig. 1, the invention is a visible light-controlled magneto-optic spinning electronic device inserted into a buffer layer
Preparing metal film by using DC magnetron sputtering method to reach vacuum degree of 2.0 × 10-7Starting with a Torr, sequentially depositing the deposited particles at a power of 30w to 50wThe material is needed. A Co (1nm)/Ta (4nm)/substrate structure was obtained. In the whole film preparation process, tools such as a quartz crystal microbalance and the like are used for detecting the growth process, so that the accuracy of growth parameters of each layer is ensured.
And (3) spin coating of the buffer layer, namely sucking 20 mu L of ZnO solution, performing spin coating at 2000rpm by a spin coater, and covering a ZnO film on the Co layer to form a ZnO/Co (1nm)/Ta (4nm)/substrate test structure.
Spin coating of a photovoltaically active layer donor PTB7-Th and acceptor PC71BM from Canada 1-Material Chemcistech, used as received, a polymer concentration of 8mg m L was prepared in a halogen-free solvent (o-xylene) containing 3% by volume of diiodooctane-1The photovoltaic active layer solution (PTB7-Th/PC71BM ratio 1: 1.5). The solution was stirred at 80 ℃ overnight before preparation of the photovoltaic active layer. A certain amount of the solution is sucked, and the solution is deposited on the buffer layer at the rotating speed of 1500rpm, wherein the thickness of the buffer layer is about 70 nm. Placing the mixture in an ultra-clean environment for more than 10 hours. Formation of PTB7-Th: test structures for PC71BM/ZnO/Co (1nm)/Ta (4 nm)/substrate.
Growing a top electrode by using a direct current magnetron sputtering method and enabling the vacuum degree to reach 2.0 × 10-7The desired substances were sequentially started at a power of 30w to 50w under Torr, and Pt (3nm) was used in this example. Formation of Pt (3nm)/PTB 7-Th: PC71BM/ZnO/Co (1nm)/Ta (4nm)/substrate device structure.
Regulating and controlling, namely quantifying the sunlight control of magnetic anisotropy by using an ESR (JES-FA200, JEO L RESONANCE Inc.) mode, selecting a TE 011 mode microwave power of 9200MHz, when the magnetic film of the external magnetic field is horizontally arranged at 0 degree and the external magnetic field is vertically arranged at 90 degrees with the magnetic film, and using a P L-XQ 500W xenon lamp solar simulator at 150mWcm-2The equipment is illuminated, and the regulating quantity is measured.
Fig. 2 of the present invention shows the ferromagnetic resonance field results obtained under dark conditions and under light conditions, respectively, without adding a ZnO buffer layer, and it can be seen that the in-plane control amount is 125.58Oe and the out-of-plane control amount is 169.37Oe.
In the invention, the ZnO buffer layer is added in the attached figure 3, and the ferromagnetic resonance field results obtained under the other experimental conditions consistent with the conditions in the attached figure 2 show that the in-plane regulating quantity is 202.73Oe, and the out-of-plane regulating quantity is 196 Oe.
In the invention, the accompanying figure 4 compares the regulation and control amounts of the buffer layer and the buffer layer, and shows that the regulation and control amounts of the buffer layer additionally arranged on the inner surface of the face are larger than the regulation and control amounts of the buffer layer not arranged.
Example 2
Referring to fig. 1, the visible light-controlled magneto-optic spinning electronic device with the inserted buffer layer of the invention:
preparing metal film by using DC magnetron sputtering method to reach vacuum degree of 2.0 × 10-7The Torr was started to deposit the desired materials sequentially at a power of 30w to 50 w. NiFe (1.5nm)/Ta (4nm)/substrate structure is obtained. In the whole film preparation process, tools such as a quartz crystal microbalance and the like are used for detecting the growth process, so that the accuracy of growth parameters of each layer is ensured.
Preparing a buffer layer by using a direct-current magnetron sputtering method to reach the vacuum degree of 2.0 × 10-7Ba (3nm) starts to grow at a power of 30w when the reactor is in Torr, and a Ba (3nm)/NiFe (1.5nm)/Ta (4nm)/substrate structure is obtained
Spin coating of a photovoltaically active layer donor PTB7-Th and acceptor PC71BM from Canada 1-Material Chemcistech, used as received, a polymer concentration of 8mg m L was prepared in a halogen-free solvent (o-xylene) containing 3% by volume of diiodooctane-1The photovoltaic active layer solution (PTB7-Th/PC71BM ratio 1: 1.5). The solution was stirred at 80 ℃ overnight before preparation of the photovoltaic active layer. A certain amount of the solution is sucked, and the solution is deposited on the buffer layer at the rotating speed of 1500rpm, wherein the thickness of the buffer layer is about 70 nm. Placing the mixture in an ultra-clean environment for more than 10 hours. Formation of PTB7-Th: test Structure of PC71BM/Ba (3nm)/NiFe (1.5nm)/Ta (4 nm)/substrate.
Growing a top electrode by using a direct current magnetron sputtering method and enabling the vacuum degree to reach 2.0 × 10-7The required substances were sequentially supplied at a power of 30w to 50w while Torr, and Au (3nm) was used in this example. Formation of Au (3nm)/PTB 7-Th: PC71BM/ZnO/Co (1nm)/Ta (4nm)/substrate device structure.
The regulation is carried out, namely the solar control of the magnetic anisotropy is quantified through ESR spectrum (JES-FA200, JEO L RESONANCE Inc.), and the microwave power of a selected TE 011 mode is 9200MHzWhen the external magnetic field magnetic film is horizontally arranged at 0 degree and the external magnetic field is perpendicular to the magnetic film at 90 degrees, the P L-XQ 500W xenon lamp solar simulator is used at 150mWcm-2The equipment is illuminated, and the regulating quantity is measured.
Example 3
Referring to fig. 1, the visible light-controlled magneto-optic spintronic device of the present invention with the buffer layer inserted therein:
preparing metal film by using DC magnetron sputtering method to reach vacuum degree of 2.0 × 10-7The Torr was started to deposit the desired materials sequentially at a power of 30w to 50 w. A Co75Fe25(1.2nm)/Ta (4nm)/substrate structure was obtained. In the whole film preparation process, tools such as a quartz crystal microbalance and the like are used for detecting the growth process, so that the accuracy of growth parameters of each layer is ensured.
And (3) spin coating of the buffer layer, namely sucking 15 mu L of ZnO solution, performing spin coating at 2000rpm by a spin coater, and covering a ZnO film on the Co layer to form a test structure of ZnO/Co75Fe25(1.2nm)/Ta (4 nm)/substrate.
Spin coating of a photovoltaically active layer donor PTB7-Th and acceptor PC71BM from Canada 1-Material Chemcistech, used as received, a polymer concentration of 8mg m L was prepared in a halogen-free solvent (o-xylene) containing 3% by volume of diiodooctane-1The photovoltaic active layer solution (PTB7-Th/PC71BM ratio 1: 1.5). The solution was stirred at 80 ℃ overnight before preparation of the photovoltaic active layer. A certain amount of the solution is sucked, and the solution is deposited on the buffer layer at the rotating speed of 1500rpm, wherein the thickness of the buffer layer is about 70 nm. Placing the mixture in an ultra-clean environment for more than 10 hours. Formation of PTB7-Th: test structures for PC71BM/ZnO/Co75Fe25(1.2nm)/Ta (4 nm)/substrate.
Growing a top electrode by using a direct current magnetron sputtering method and enabling the vacuum degree to reach 2.0 × 10-7The required substances were sequentially supplied at a power of 30w to 50w while Torr, and Au (3nm) was used in this example. Formation of Au (3nm)/PTB 7-Th: PC71BM/ZnO/Co75Fe25(1.2nm)/Ta (4 nm)/substrate.
Regulating and controlling, namely quantifying the sunlight control of magnetic anisotropy by ESR (JES-FA200, JEO L RESONANCE Inc.) selecting the microwave power of a TE 011 mode to be 9200MHz, and when the magnetic film of an external magnetic field is parallel to the magnetic film0 degree, the external magnetic field is perpendicular to the magnetic film by 90 degrees, and a P L-XQ 500W xenon lamp solar simulator is used at 100mWcm-2The equipment is illuminated, and the regulating quantity is measured.
Claims (8)
1. A method for enhancing the magnetic regulation and control of sunlight on a metal film by using a buffer layer is characterized by comprising the following steps:
step 1, preparing a film: obtaining a metal film layer on a substrate by using a film deposition method;
step 2, spin coating/depositing a buffer layer: selecting a cathode buffer layer which is favorable for transmitting electrons/blocking holes to spin-coat or deposit on the metal film to form a test structure with a multilayer structure;
step 3, spin coating of the photovoltaic active layer: spin coating the selected photovoltaic active layer on the buffer layer;
step 4, growing an electrode: preparing a top electrode of the device;
and 5, regulating and controlling by using sunlight.
2. The method for enhancing the magnetic control of sunlight on a metal film by using the buffer layer as claimed in claim 1, wherein the substrate in the step 1 is: one of silicon, silica or mica; the film structure is as follows: Co/Ta/substrate or CoFe/Ta/substrate, wherein the thickness of CoFe is 1.1nm or 1.2nm, the thickness of Co is 0.9nm or 1nm, and the thickness of Ta is 4 nm; CoFe or Co can be replaced with FeCoB or NiFe.
3. The method for enhancing the magnetic control of sunlight on a metal film by using the buffer layer as claimed in claim 1, wherein in the step 1, the substrate to be used needs to be immersed in acetone with the concentration of 99% for cleaning for 10min in an ultrasonic oscillator with the power of 90 w; then immersing the substrate in 99% alcohol in an ultrasonic oscillator with power of 90w for cleaning for 10 min; finally, the glass is immersed in deionized water in an ultrasonic oscillator with power of 90w for cleaning for 10min and dried by using an air gun.
4. The method for enhancing the magnetic control of sunlight on a metal thin film by using the buffer layer as claimed in claim 1, wherein the buffer layer in the step 2 is made of one of ZnO, Ba, L iF or Ca.
5. The method for enhancing the magnetic regulation and control of the metal film by the sunlight through the buffer layer according to claim 1, wherein in the step 2, the solution is spin-coated, 15 mu L of the solution is taken, spin-coating is carried out at 2000rpm of a spin coater to obtain the buffer layer, and the solid is obtained into the film with the thickness of 3nm to 10nm through magnetron sputtering.
6. The method for enhancing the magnetic control of sunlight on a metal film by using the buffer layer as claimed in claim 1, wherein in the step 3, the photovoltaic active layer is one of P3HT: PC61BM, PTB7-Th: PC71BM, P-DTS (FBTTH2)2: PC71BM: PTB 7-Th; spin coating speed: 1500rpm, the thickness of the photovoltaic active layer is 70 nm; the sample with the photovoltaic active layer coated thereon is left to stand for 10 to 15 hours to be uniform and dried.
7. The method for enhancing the magnetic control of sunlight on a metal thin film by using the buffer layer as claimed in claim 1, wherein in the step 4, one of Pt or Au is used as the top electrode material; the electrode was prepared using a magnetron sputtering method.
8. The method for enhancing the magnetic regulation and control of the solar light on the metal thin film by using the buffer layer as claimed in claim 1, wherein in the step 5, the regulation and control is performed by using a simulated solar light lamp or other visible light.
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| CN103208589A (en) * | 2013-03-21 | 2013-07-17 | 北京大学 | Organic light-emitting diode (OLED) device with calcium halide serving as a cathode buffer layer and preparation method for OLED device |
| CN108767118A (en) * | 2018-06-19 | 2018-11-06 | 南京邮电大学 | A kind of ternary all-polymer solar cell |
| CN109768155A (en) * | 2018-12-25 | 2019-05-17 | 西安交通大学 | A kind of spin electric device and preparation method for realizing visible light regulation INTERFACE MAGNETISM |
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2020
- 2020-03-31 CN CN202010247202.1A patent/CN111416037A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103208589A (en) * | 2013-03-21 | 2013-07-17 | 北京大学 | Organic light-emitting diode (OLED) device with calcium halide serving as a cathode buffer layer and preparation method for OLED device |
| CN108767118A (en) * | 2018-06-19 | 2018-11-06 | 南京邮电大学 | A kind of ternary all-polymer solar cell |
| CN109768155A (en) * | 2018-12-25 | 2019-05-17 | 西安交通大学 | A kind of spin electric device and preparation method for realizing visible light regulation INTERFACE MAGNETISM |
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| YIFAN ZHAO等: "Sunlight Control of Interfacial Magnetism for Solar Driven Spintronic Applications", 《ADVANCED SCIENCE NEWS》 * |
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Application publication date: 20200714 |