CN111415918A - Reactive film-based interconnection method - Google Patents
Reactive film-based interconnection method Download PDFInfo
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- CN111415918A CN111415918A CN202010155408.1A CN202010155408A CN111415918A CN 111415918 A CN111415918 A CN 111415918A CN 202010155408 A CN202010155408 A CN 202010155408A CN 111415918 A CN111415918 A CN 111415918A
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- 238000000576 coating method Methods 0.000 claims abstract description 21
- 239000002184 metal Substances 0.000 claims abstract description 21
- 229910052751 metal Inorganic materials 0.000 claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 239000003638 chemical reducing agent Substances 0.000 claims abstract description 12
- 239000002904 solvent Substances 0.000 claims abstract description 11
- 238000006243 chemical reaction Methods 0.000 claims abstract description 9
- 239000002243 precursor Substances 0.000 claims abstract description 9
- 239000002923 metal particle Substances 0.000 claims abstract description 8
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 7
- 238000005530 etching Methods 0.000 claims abstract description 7
- 239000002086 nanomaterial Substances 0.000 claims abstract description 5
- 238000001816 cooling Methods 0.000 claims abstract description 4
- 238000002156 mixing Methods 0.000 claims abstract description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 19
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims description 15
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 claims description 10
- 229920000036 polyvinylpyrrolidone Polymers 0.000 claims description 10
- 239000001267 polyvinylpyrrolidone Substances 0.000 claims description 10
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 claims description 10
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 claims description 10
- -1 silver tetrafluoroborate Chemical compound 0.000 claims description 9
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 claims description 8
- 239000012528 membrane Substances 0.000 claims description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 claims description 6
- 229910021578 Iron(III) chloride Inorganic materials 0.000 claims description 6
- 229940032296 ferric chloride Drugs 0.000 claims description 6
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 claims description 6
- 229910021607 Silver chloride Inorganic materials 0.000 claims description 5
- XTVVROIMIGLXTD-UHFFFAOYSA-N copper(II) nitrate Chemical compound [Cu+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O XTVVROIMIGLXTD-UHFFFAOYSA-N 0.000 claims description 5
- CQLFBEKRDQMJLZ-UHFFFAOYSA-M silver acetate Chemical compound [Ag+].CC([O-])=O CQLFBEKRDQMJLZ-UHFFFAOYSA-M 0.000 claims description 5
- 229940071536 silver acetate Drugs 0.000 claims description 5
- HKZLPVFGJNLROG-UHFFFAOYSA-M silver monochloride Chemical compound [Cl-].[Ag+] HKZLPVFGJNLROG-UHFFFAOYSA-M 0.000 claims description 5
- 229910001961 silver nitrate Inorganic materials 0.000 claims description 5
- 239000011780 sodium chloride Substances 0.000 claims description 5
- 229960002668 sodium chloride Drugs 0.000 claims description 5
- CIWBSHSKHKDKBQ-JLAZNSOCSA-N Ascorbic acid Chemical compound OC[C@H](O)[C@H]1OC(=O)C(O)=C1O CIWBSHSKHKDKBQ-JLAZNSOCSA-N 0.000 claims description 4
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 claims description 4
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 claims description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 4
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims description 4
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- NDVLTYZPCACLMA-UHFFFAOYSA-N silver oxide Chemical compound [O-2].[Ag+].[Ag+] NDVLTYZPCACLMA-UHFFFAOYSA-N 0.000 claims description 4
- 239000001509 sodium citrate Substances 0.000 claims description 4
- NLJMYIDDQXHKNR-UHFFFAOYSA-K sodium citrate Chemical compound O.O.[Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O NLJMYIDDQXHKNR-UHFFFAOYSA-K 0.000 claims description 4
- LZZYPRNAOMGNLH-UHFFFAOYSA-M Cetrimonium bromide Chemical compound [Br-].CCCCCCCCCCCCCCCC[N+](C)(C)C LZZYPRNAOMGNLH-UHFFFAOYSA-M 0.000 claims description 2
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims description 2
- 239000005751 Copper oxide Substances 0.000 claims description 2
- 229910021591 Copper(I) chloride Inorganic materials 0.000 claims description 2
- GSNUFIFRDBKVIE-UHFFFAOYSA-N DMF Natural products CC1=CC=C(C)O1 GSNUFIFRDBKVIE-UHFFFAOYSA-N 0.000 claims description 2
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 claims description 2
- 239000002202 Polyethylene glycol Substances 0.000 claims description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 claims description 2
- DBMJMQXJHONAFJ-UHFFFAOYSA-M Sodium laurylsulphate Chemical compound [Na+].CCCCCCCCCCCCOS([O-])(=O)=O DBMJMQXJHONAFJ-UHFFFAOYSA-M 0.000 claims description 2
- 239000003570 air Substances 0.000 claims description 2
- 239000011668 ascorbic acid Substances 0.000 claims description 2
- 229960005070 ascorbic acid Drugs 0.000 claims description 2
- 235000010323 ascorbic acid Nutrition 0.000 claims description 2
- 239000012298 atmosphere Substances 0.000 claims description 2
- 238000005266 casting Methods 0.000 claims description 2
- 229910000431 copper oxide Inorganic materials 0.000 claims description 2
- 229910000365 copper sulfate Inorganic materials 0.000 claims description 2
- OXBLHERUFWYNTN-UHFFFAOYSA-M copper(I) chloride Chemical compound [Cu]Cl OXBLHERUFWYNTN-UHFFFAOYSA-M 0.000 claims description 2
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 claims description 2
- OPQARKPSCNTWTJ-UHFFFAOYSA-L copper(ii) acetate Chemical compound [Cu+2].CC([O-])=O.CC([O-])=O OPQARKPSCNTWTJ-UHFFFAOYSA-L 0.000 claims description 2
- 229960003280 cupric chloride Drugs 0.000 claims description 2
- 229940045803 cuprous chloride Drugs 0.000 claims description 2
- 238000001125 extrusion Methods 0.000 claims description 2
- 229960002089 ferrous chloride Drugs 0.000 claims description 2
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 claims description 2
- NMCUIPGRVMDVDB-UHFFFAOYSA-L iron dichloride Chemical compound Cl[Fe]Cl NMCUIPGRVMDVDB-UHFFFAOYSA-L 0.000 claims description 2
- 239000002105 nanoparticle Substances 0.000 claims description 2
- 229920001223 polyethylene glycol Polymers 0.000 claims description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 claims description 2
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 claims description 2
- 238000007650 screen-printing Methods 0.000 claims description 2
- 229910001923 silver oxide Inorganic materials 0.000 claims description 2
- 229910000367 silver sulfate Inorganic materials 0.000 claims description 2
- YPNVIBVEFVRZPJ-UHFFFAOYSA-L silver sulfate Chemical compound [Ag+].[Ag+].[O-]S([O-])(=O)=O YPNVIBVEFVRZPJ-UHFFFAOYSA-L 0.000 claims description 2
- 229910001494 silver tetrafluoroborate Inorganic materials 0.000 claims description 2
- 239000012279 sodium borohydride Substances 0.000 claims description 2
- 229910000033 sodium borohydride Inorganic materials 0.000 claims description 2
- HFQQZARZPUDIFP-UHFFFAOYSA-M sodium;2-dodecylbenzenesulfonate Chemical compound [Na+].CCCCCCCCCCCCC1=CC=CC=C1S([O-])(=O)=O HFQQZARZPUDIFP-UHFFFAOYSA-M 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 2
- 239000012713 reactive precursor Substances 0.000 claims 3
- 238000001272 pressureless sintering Methods 0.000 abstract description 3
- 230000001105 regulatory effect Effects 0.000 abstract description 3
- 230000001276 controlling effect Effects 0.000 abstract description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 44
- 239000012071 phase Substances 0.000 description 24
- 239000002002 slurry Substances 0.000 description 17
- 229910052802 copper Inorganic materials 0.000 description 8
- 239000010949 copper Substances 0.000 description 8
- 229910052709 silver Inorganic materials 0.000 description 7
- 239000004332 silver Substances 0.000 description 7
- 239000007769 metal material Substances 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 239000002245 particle Substances 0.000 description 5
- 229920000139 polyethylene terephthalate Polymers 0.000 description 5
- 239000005020 polyethylene terephthalate Substances 0.000 description 5
- 238000004100 electronic packaging Methods 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
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- 230000010355 oscillation Effects 0.000 description 4
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- 238000003756 stirring Methods 0.000 description 4
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- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 3
- 238000005476 soldering Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5387—Flexible insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
- H01L21/76861—Post-treatment or after-treatment not introducing additional chemical elements into the layer
- H01L21/76864—Thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5386—Geometry or layout of the interconnection structure
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Geometry (AREA)
- Manufacture Of Metal Powder And Suspensions Thereof (AREA)
- Manufacturing Of Printed Wiring (AREA)
Abstract
The invention provides a reactive film-based interconnection method, which comprises the following steps: s1: mixing a reaction precursor of the metal nano material, an etching agent, a reducing agent, a coating agent and a solvent to obtain a single-phase reactive solution; s2: coating the single-phase reactive solution on the surface of the flexible substrate to form a single-phase reactive film; s3: heating the single-phase reactive film to obtain a reactive film; the reactive film comprises nano-metal particles, nano-metal wires, and/or nano-metal sheets; s3: cooling the reactive film; s4: placing a chip on the surface of the reactive film to obtain a prefabricated member; s5: and heating and transferring the obtained product onto the interconnection substrate to obtain the interconnection device, and sintering the interconnection device. The invention obtains various nanometer metal shapes by changing the mass ratio of the reaction precursor, the etching agent and the reducing agent and regulating and controlling the heating temperature and time, and realizes pressureless sintering at lower sintering temperature.
Description
Technical Field
The invention belongs to the technical field of semiconductor interconnection material processes, and particularly relates to an interconnection method based on a reactive film.
Background
As an indispensable component in the process of assembling electronic products, soldering can effectively connect functions of each part of a device, and as high power, high density and integration become the future trend of electronic technology development, higher and more comprehensive reliability requirements are also put forward for the packaging of high-power devices. Metallic silver is a promising electronic assembly material because silver has very high thermal conductivity (429W/(m.K)) and excellent electrical properties (63MS/m), making it possible to meet the heat dissipation requirements of high power density systems; and the silver has good creep resistance and corrosion resistance, and the remelting phenomenon can be avoided in the electronic packaging interconnection process. Although the melting point of bulk silver is higher (961 ℃), the nano silver sintering technology provides a solution for low-temperature sintering and high-temperature service of silver. The melting point and sintering temperature of the nano silver particles are much lower than those of bulk silver due to the nano size effect, and the nano silver particles melted on the surface are wetted and diffused with each other by the capillary action of the liquid phase, and finally combined into a sintered body having a similar melting point to that of bulk silver. Therefore, the nano silver particles can be used as a substitute material of alloy solder in the high-power device packaging. At present, the application of nano silver particles in power semiconductor packaging mainly has 2 modes: the first is to print the nanometer silver solder paste on the base plate needing to be connected directly, and then put the chip on to carry out pressureless/pressured sintering connection; the other method is that the nano silver soldering paste is coated on a larger chip, the chip coated with the soldering paste is cut into a required size after drying, and then the chip and the substrate are bonded together for pressure sintering. These 2 modes of application use essentially a paste-like form of nanosilver, rather than being preformed into a sheet. The nano silver film is used as a lead-free preformed welding film, not only overcomes the defects that the traditional alloy welding flux has poor heat conductivity and can not work under extreme conditions, but also has the storage and use convenience which the nano silver welding paste does not have, and is particularly suitable for being used as a novel welding material for interconnecting IGBT power type chips in the field of electronic packaging.
Disclosure of Invention
In view of the above technical problems in the art, the present invention provides a reactive film-based interconnection method, comprising:
s1: mixing a reaction precursor of the metal nano material, an etching agent, a reducing agent, a coating agent and a solvent to obtain a single-phase reactive solution;
s2: coating the single-phase reactive solution on the surface of the flexible substrate to form a single-phase reactive film;
s3: heating the single-phase reactive film to obtain a reactive film;
the reactive film comprises nano-metal particles, nano-metal wires, and/or nano-metal sheets;
s3: cooling the reactive film;
s4: placing a chip on the surface of the reactive film to obtain a prefabricated member;
s5: and heating and transferring the obtained product onto the interconnection substrate to obtain the interconnection device, and sintering the interconnection device.
Preferably, the mass ratio of the reaction precursor, the etchant and the reducing agent, and the heating temperature are controlled to obtain nano metal particles, nano particle lines and/or nano metal sheets with different mass ratios.
Preferably, in S1, the reaction precursor, the etchant, the reducing agent, the coating agent, and the solvent of the mixed metal nanomaterial further include: and (4) ultrasonically vibrating the single-phase reactive solution.
Preferably, in S2, the coating is one or more of casting, screen printing and slit extrusion; heating the single-phase reactive membrane comprises: a petri dish was placed over the single-phase reactive membrane.
Preferably, in S2, the heating conditions are: the temperature interval is 50-170 ℃, and the heating time interval is 30 min-24 h.
Preferably, in S5, the sintering atmosphere is air, nitrogen, argon, hydrogen-argon mixture gas and hydrogen-nitrogen mixture gas, the sintering temperature range is between room temperature and 250 ℃, and the sintering time is between 20 min and 200 min.
Preferably, the reaction precursor is one or a combination of more of silver nitrate, silver chloride, silver acetate, silver oxide, silver sulfate, silver tetrafluoroborate, silver hexafluoroantimonate, copper nitrate, copper chloride, copper acetate, copper oxide, copper sulfate, copper tetrafluoroborate and copper hexafluoroantimonate.
Preferably, the etchant is one or more of sodium chloride, ferric chloride, cupric chloride, ferrous chloride and cuprous chloride.
Preferably, the reducing agent is one or more of sodium citrate, ascorbic acid, dimethyl sulfoxide, pyridine, polyethylene glycol, ethylene glycol, hydrazine, EDTA, sodium borohydride and formaldehyde.
Preferably, the coating agent is one or more of sodium citrate, SDBS, polyvinylpyrrolidone, polyvinyl alcohol, CTAB and SDS; the solvent is one or more of water, glycol, glycerol, DMF, ethanol and isopropanol.
According to the invention, by changing the mass ratio of a reaction precursor, an etching agent and a reducing agent, and regulating and controlling the heating temperature and time, various nano metal morphologies including nano metal particles, nano metal wires and nano metal sheets are obtained; in addition, the invention forms nano metal materials with multiple dimensions on the surface of the flexible substrate in situ, can better realize pressureless sintering at lower sintering temperature based on the shape effect of the nano metal materials, and is widely applied to a plurality of emerging microelectronic interconnection fields such as flexible electronic packaging, thermosensitive organic flexible substrates, sensing lead-free microcircuits and the like.
Drawings
FIG. 1a is a physical diagram of the formed reactive nano-silver film provided in example 1;
FIG. 1b is a surface SEM topography of the formed reactive nano-silver film provided in example 1;
FIG. 2 is a schematic view of the process flow of the reactive film interconnect provided in examples 1-4.
Detailed Description
The technical solutions in the embodiments of the present invention are clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the scope of the present invention.
Example 1
This example provides a method for interconnecting reactive nano-silver films, as shown in fig. 1a, 1b, and 2.
1. Preparing single-phase reactive nano-silver slurry.
Adding silver chloride, polyvinylpyrrolidone and ferric chloride into an ethylene glycol solvent respectively, wherein the molar ratio of the silver chloride to the polyvinylpyrrolidone is 70: 1, the molar ratio of the silver chloride to the ferric chloride is 1000: 1, stirring for 60min, and then carrying out ultrasonic oscillation for 10min to obtain uniformly dispersed single-phase reactive nano-silver slurry.
2. And coating the single-phase reactive nano silver slurry on a flexible substrate, and heating.
Coating the single-phase reactive nano silver slurry on high-temperature-resistant PET by using a wire rod coating process, covering a culture dish on the surface of the coating liquid, and heating at 130 ℃ for 2 hours to obtain a reactive nano silver film, wherein the scanning electron microscope of the microstructure of the obtained reactive nano silver film is shown in figure 1 a.
3. The reactive nano-silver film was cooled to room temperature.
4. An integral device preform is obtained.
And 5, covering the surface of the reactive nano silver film with a chip to obtain the whole device prefabricated part.
6. And heating and transferring the obtained product onto the interconnection substrate to obtain the interconnection device, and sintering the interconnection device.
Sintering at 220 deg.C for 5min under nitrogen atmosphere. The shear force of the power semiconductor interconnection device is 30 Mpa.
Example 2
This example provides a method of interconnecting reactive nanosilver films, as shown in fig. 2.
1. Preparing single-phase reactive nano-silver slurry.
Silver nitrate, ferric chloride, polyvinylpyrrolidone and sodium chloride are respectively added into a glycerol solvent, wherein the molar ratio of the silver nitrate to the polyvinylpyrrolidone is 30: 1, and the molar ratio of the silver nitrate to the ferric chloride is 30000: 1; stirring for 60min, and then carrying out ultrasonic oscillation for 10min to obtain uniformly dispersed single-phase reactive nano-silver slurry.
2. And coating the single-phase reactive nano silver slurry on a flexible substrate, and heating.
Coating the single-phase reactive nano silver slurry on high-temperature-resistant PET (polyethylene terephthalate) by using a wire rod coating process, covering a culture dish on the flexible substrate area printed with the single-phase reactive nano silver slurry, and heating at 180 ℃ for 2 hours to obtain the reactive nano silver film.
3. The reactive nano-silver film was cooled to room temperature.
4. An integral device preform is obtained.
5. And covering the chip on the surface of the reactive nano silver film to obtain the whole device prefabricated part.
6. And heating and transferring the obtained product onto the interconnection substrate to obtain the interconnection device, and sintering the interconnection device.
Sintering at 220 deg.C for 5min under nitrogen atmosphere. The shear force of the power semiconductor interconnection device is 23 Mpa.
Example 3
This example provides a method of interconnecting reactive nanosilver films, as shown in fig. 2.
1. Preparing single-phase reactive nano-silver slurry.
Adding silver acetate, copper chloride, polyvinylpyrrolidone and glycerol into an ethylene glycol solvent respectively, wherein the molar ratio of the silver acetate to the polyvinylpyrrolidone is 10000: 1, and the molar ratio of the silver acetate to the copper chloride is 50000: 1; stirring for 60min, and then carrying out ultrasonic oscillation for 10min to obtain uniformly dispersed single-phase reactive nano-silver slurry.
2. And coating the single-phase reactive nano silver slurry on a flexible substrate, and heating.
Coating the single-phase reactive nano silver slurry on high-temperature-resistant PET by using a wire rod coating process, covering a culture dish on the surface of the coating liquid, and heating at 130 ℃ for 2 hours to obtain the reactive nano silver film.
3. The reactive nano-silver film was cooled to room temperature.
4. An integral device preform is obtained.
And 5, covering the surface of the reactive nano silver film with a chip to obtain the whole device prefabricated part.
6. And heating and transferring the obtained product onto the interconnection substrate to obtain the interconnection device, and sintering the interconnection device.
Sintering at 220 deg.C for 5min under nitrogen atmosphere. The shear force of the power semiconductor interconnection device is 27 Mpa.
Example 4
This example provides a method for interconnecting reactive nano-copper films, as shown in fig. 2.
1. Preparing single-phase reactive nano-copper slurry.
Respectively adding copper nitrate, sodium chloride, polyvinylpyrrolidone and glycerol into an ethylene glycol solvent, wherein the molar ratio of the copper nitrate to the polyvinylpyrrolidone is 20: 1, the molar ratio of the copper nitrate to the sodium chloride is not 15000: 1, stirring for 60min, and then carrying out ultrasonic oscillation for 10min to obtain uniformly dispersed single-phase reactive nano-copper slurry.
2. And coating the single-phase reactive nano-copper slurry on a flexible substrate, and heating.
Coating the single-phase reactive nano-copper slurry on high-temperature-resistant PET by using a wire rod coating process, covering a culture dish on the surface of the coating liquid, and heating at 130 ℃ for 2 hours to obtain the reactive nano-copper film.
3. And cooling the reactive nano copper film to room temperature.
4. An integral device preform is obtained.
And 5, covering the surface of the reactive nano copper film with a chip to obtain the whole device prefabricated part.
6. And heating and transferring the obtained product onto the interconnection substrate to obtain the interconnection device, and sintering the interconnection device.
Sintering at 220 deg.C for 5min under nitrogen atmosphere. The shear force of the power semiconductor interconnection device is 31 Mpa.
The interconnection method based on the reactive film provided by the invention has at least the following beneficial effects:
(1) the interconnection method based on the reactive membrane provided by the invention has the advantages of simple preparation of coating liquid, no existence of particles, easy storage and suitability for mass low-cost production.
(2) Compared with a nano metal film which is not added with an etching agent and consists of nano metal particles, the method provided by the invention has the advantages that the mass ratio of a reaction precursor, the etching agent and a reducing agent is changed, and the heating temperature and time are regulated and controlled, so that various nano metal morphologies including nano metal particles, nano metal wires and nano metal sheets are obtained;
(3) the invention forms the nanometer metal material with multiple dimensionalities on the surface of the flexible substrate in situ, does not need to prepare the nanometer metal material with multiple dimensionalities in advance and coat the nanometer metal material to the flexible substrate after mixing, can better realize pressureless sintering at lower sintering temperature based on the shape effect of the nanometer metal material, and is widely applied to a plurality of emerging microelectronic interconnection fields such as flexible electronic packaging, thermosensitive organic flexible substrates, sensing leadless microcircuits and the like.
The above-mentioned embodiments, objects, technical solutions and advantages of the present invention are further described in detail, it should be understood that the above-mentioned embodiments are only examples of the present invention, and are not intended to limit the scope of the present invention, and any modifications, equivalent substitutions, improvements and the like made within the spirit and principle of the present invention should be included in the scope of the present invention.
Claims (10)
1. A reactive film based interconnect method, comprising:
s1: mixing a reaction precursor of the metal nano material, an etching agent, a reducing agent, a coating agent and a solvent to obtain a single-phase reactive solution;
s2: coating the single-phase reactive solution on the surface of the flexible substrate to form a single-phase reactive film;
s3: heating the single-phase reactive film to obtain a reactive film;
the reactive film comprises nano-metal particles, nano-metal wires, and/or nano-metal sheets;
s3: cooling the reactive film;
s4: placing a chip on the surface of the reactive film to obtain a prefabricated member;
s5: and heating and transferring the obtained product onto the interconnection substrate to obtain the interconnection device, and sintering the interconnection device.
2. The reactive film-based interconnect method of claim 1, wherein the mass ratios of the reactive precursor, the etchant, and the reducing agent, and the temperature of the heating are controlled to obtain different mass ratios of the nano-metal particles, nano-particle lines, and/or nano-metal sheets.
3. The reactive film-based interconnection method of claim 1, wherein in S1, the reactive precursors, the etchant, the reducing agent, the coating agent, and the solvent of the mixed metal nanomaterial further comprise: and (4) ultrasonically vibrating the single-phase reactive solution.
4. The reactive film-based interconnect method of claim 1, wherein in S2, the coating is one or more of casting, screen printing, and slit extrusion; heating the single-phase reactive membrane comprises: a petri dish was placed over the single-phase reactive membrane.
5. The reactive film-based interconnect method of claim 1, wherein in S2, the heating conditions are: the temperature interval is 50-170 ℃, and the heating time interval is 30 min-24 h.
6. The interconnection method based on reactive film according to claim 1, wherein in S5, the sintering atmosphere is air, nitrogen, argon, hydrogen-argon mixture and hydrogen-nitrogen mixture, the sintering temperature is between room temperature and 250 ℃, and the sintering time is between 20-200 min.
7. The reactive film-based interconnect method of any one of claims 1-6, wherein the reactive precursor is one or more of silver nitrate, silver chloride, silver acetate, silver oxide, silver sulfate, silver tetrafluoroborate, silver hexafluoroantimonate, copper nitrate, copper chloride, copper acetate, copper oxide, copper sulfate, copper tetrafluoroborate, and copper hexafluoroantimonate.
8. The reactive film based interconnect method of any of claims 1-6, wherein said etchant is a combination of one or more of sodium chloride, ferric chloride, cupric chloride, ferrous chloride, cuprous chloride.
9. The reactive membrane-based interconnect method of any one of claims 1-6, wherein the reducing agent is a combination of one or more of sodium citrate, ascorbic acid, dimethyl sulfoxide, pyridine, polyethylene glycol, ethylene glycol, hydrazine, EDTA, sodium borohydride, formaldehyde.
10. The reactive membrane-based interconnect method of any one of claims 1-6, wherein the coating agent is a combination of one or more of sodium citrate, SDBS, polyvinylpyrrolidone, polyvinyl alcohol, CTAB, SDS; the solvent is one or more of water, glycol, glycerol, DMF, ethanol and isopropanol.
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