CN111413727A - Electron beam divergence angle measuring device and preparation method and measuring method thereof - Google Patents
Electron beam divergence angle measuring device and preparation method and measuring method thereof Download PDFInfo
- Publication number
- CN111413727A CN111413727A CN202010294120.2A CN202010294120A CN111413727A CN 111413727 A CN111413727 A CN 111413727A CN 202010294120 A CN202010294120 A CN 202010294120A CN 111413727 A CN111413727 A CN 111413727A
- Authority
- CN
- China
- Prior art keywords
- electron beam
- fluorescent screen
- divergence angle
- tungsten
- beam divergence
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/29—Measurement performed on radiation beams, e.g. position or section of the beam; Measurement of spatial distribution of radiation
- G01T1/2907—Angle determination; Directional detectors; Telescopes
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T7/00—Details of radiation-measuring instruments
Abstract
The invention discloses an electron beam divergence angle measuring device and a preparation method and a measuring method thereof. The method comprises the steps of utilizing helium ion microscope ions to assist deposition, constructing a tungsten micro-nano pattern on a fluorescent screen, changing the shape and the size of spots of an electron beam on the fluorescent screen when the fluorescent screen is moved, and directly measuring the beam spot and the divergence angle of the electron beam according to the size and the size of the tungsten micro-nano pattern. The device has the advantages of multiple functions, high measurement precision, simple operation and the like; the preparation method has the advantages of high precision, easy control, simple process and the like.
Description
Technical Field
The invention relates to the technical field of electron beam divergence angle measurement, in particular to an electron beam divergence angle measuring device and a preparation method and a measuring method thereof.
Background
The reflection-type high-energy electron diffractometer (RHEED) mainly consists of an electron gun and a fluorescent screen, and is a powerful in-situ analysis and monitoring means in the surface science and atomic-level artificial synthetic material engineering at present. In order to improve the resolution of electron diffraction, the divergence angle of the electron beam is required to be relatively high, and is generally less than 0.1 mrad. Conventional methods for measuring the divergence angle of an electron beam include a fluorescent screen method, a multi-slit method, a single slit scanning method, a pepper-hole method, and the like, but these methods have poor measurement accuracy. At present, the more advanced method is a cerenkov radiation method, for example, the cerenkov radiation method is introduced in the document "research on the advanced measurement method of high-brightness electron beam divergence, beam length and beam spot (doctor thesis, 2008) of the university of qing" and the patent "a measurement device and measurement method for electron beam divergence angle distribution (CN 106970411A)" for measuring the electron beam divergence angle, but the measurement method has extremely high requirements for the collimation of an experimental device, has the problems of complex system adjustment, difficult development on the measurement site and the like, and is not suitable for the measurement of the electron beam divergence angle of a reflection-type high-energy electron diffractometer.
Disclosure of Invention
The invention aims to provide an electron beam divergence angle measuring device, a preparation method and a measuring method thereof, which are used for solving the problems in the prior art, and micro-nano patterns are constructed on a fluorescent screen by adopting a micro-nano processing technology, so that the electron beam divergence angle can be measured, parameters such as electron beam spot and the like can also be measured, and the electron beam divergence angle measuring device has the advantages of multiple functions, high measuring precision, simplicity in operation and the like; the preparation method has the advantages of high precision, easy control, simple process and the like.
In order to achieve the purpose, the invention provides the following scheme: the invention provides an electron beam divergence angle measuring device which comprises a fluorescent screen and a tungsten micro-nano graph, wherein tungsten hexacarbonyl is deposited on the fluorescent screen through a helium ion microscope to form the tungsten micro-nano graph, the tungsten micro-nano graph is a plurality of concentric circles, and the center of each concentric circle is located at the center of the fluorescent screen.
Preferably, the phosphor screen is square in shape, with a side length of 20-30mm and a thickness of 1-3 mm.
Preferably, the side length of the phosphor screen is 25mm and the thickness is 2 mm.
Preferably, the tungsten wire obtained by tungsten hexacarbonyl deposition is cylindrical in shape and has the diameter of 50-150 nm; the concentric circles are formed by the tungsten wires.
Preferably, the tungsten wire has a diameter of 100 nm.
Preferably, the minimum radius of a circle in a plurality of concentric circles of the tungsten micro-nano graph is 10 micrometers, and the maximum radius is 150 micrometers; the radius interval between two adjacent concentric circles is 10-20 μm.
Preferably, the ion-assisted deposition function of the helium ion microscope adopts a helium ion source, the acceleration voltage is 25-30kV, and the beam current is 5-10 pA.
The invention also discloses a preparation method of the electron beam divergence angle measuring device, which comprises the following steps:
1) cleaning the surface of the fluorescent screen: placing the fluorescent screen in a helium ion microscope, and cleaning with ions for 3-5 minutes when the vacuum is pumped to below 10-3Pa to remove oxides and pollutants on the surface of the fluorescent screen;
2) preparing a tungsten micro-nano pattern: after the fluorescent screen is cleaned, the helium ion microscope is operated under the conditions that the acceleration voltage is 25-30kV, the beam current is 5-10pA, the center position of the fluorescent screen is taken as the center of a circle, and a helium ion source is adopted to deposit tungsten hexacarbonyl with the diameter of 50-150nm according to concentric circles with the minimum radius of 10 mu m, the maximum radius of 150 mu m and the radius interval of 10-20 mu m, so that the electron beam divergence angle measuring device is obtained.
The invention also provides a method for measuring the divergence angle of the electron beam, which is applied to the device for measuring the divergence angle of the electron beam and comprises the following steps:
adjusting the spot position of an electron beam on a fluorescent screen to be in the center position of the fluorescent screen, measuring and reading the spot size by a tungsten micro-nano graphic scale of the fluorescent screen, adopting a nano workpiece stage to move the fluorescent screen back and forth along the incident direction of the electron beam, reading the moving distance by the step pitch of the workpiece stage, measuring the spot size of the electron beam on the fluorescent screen by the tungsten micro-nano graphic scale of the fluorescent screen, calculating the ratio of the change value of the spot size to the moving distance of the fluorescent screen, wherein the ratio is the tangent value of the divergence angle of the electron beam, and calculating the divergence angle of the electron beam by the tangent value of a trigonometric function.
Compared with the prior art, the invention has the following technical effects:
the electron beam divergence angle measuring device of the reflection-type high-energy electron diffractometer utilizes helium ion microscope ions to assist deposition, a tungsten micro-nano graph is constructed on a fluorescent screen, the shape and the size of spots of an electron beam on the fluorescent screen are changed when the fluorescent screen is moved, and the beam spot and the electron beam divergence angle of the electron beam are directly measured according to the size and the size of the micro-nano graph. The device has the advantages of multiple functions, high measurement precision, simple operation and the like; the preparation method has the advantages of high precision, easy control, simple process and the like.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings needed in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings without creative efforts.
FIG. 1 is a schematic view of an overall structure of an electron beam divergence angle measuring apparatus;
FIG. 2 is a cross-sectional view of a tungsten wire forming a tungsten micro-nano pattern;
wherein, 1a fluorescent screen; 201 tungsten micro-nano graph; 202 tungsten wire; 203 the center position of the screen.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The invention aims to provide an electron beam divergence angle measuring device, a preparation method and a measuring method thereof, which are used for solving the problems in the prior art, and micro-nano patterns are constructed on a fluorescent screen by adopting a micro-nano processing technology, so that the electron beam divergence angle can be measured, parameters such as electron beam spot and the like can also be measured, and the electron beam divergence angle measuring device has the advantages of multiple functions, high measuring precision, simplicity in operation and the like; the preparation method has the advantages of high precision, easy control, simple process and the like.
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in further detail below.
Example one
As shown in fig. 1-2, the present embodiment provides an electron beam divergence angle measuring apparatus, which is applied to a reflective high-energy electron diffractometer, and includes a fluorescent screen 1 and a tungsten micro-nano pattern 201, wherein the fluorescent screen 1 is a conventional fluorescent screen, is square in shape, and has a side length of 20 mm; the thickness is 1 mm. The tungsten micro-nano pattern 201 is formed by a plurality of concentric circles, the minimum radius of the concentric circles is 10 micrometers, the maximum radius of the concentric circles is 150 micrometers, the radius intervals are 10 micrometers, the concentric circles are formed by tungsten wires 202 obtained by tungsten hexacarbonyl deposition, the tungsten wires 202 are cylindrical, and the diameter of the tungsten wires is 50 nm.
The preparation method of the measuring device for the electron beam divergence angle of the reflection type high-energy electron diffractometer comprises the following steps of:
1. surface cleaning of the fluorescent screen 1: placing the fluorescent screen 1 in a helium ion microscope, and vacuumizing to 10%-3When the pressure is lower than Pa, ions are adopted to clean for 3 minutes to remove oxides and pollutants on the surface of the fluorescent screen 1;
2. preparing a tungsten micro-nano pattern 201: after the fluorescent screen 1 is cleaned, the helium ion microscope is operated under the conditions that the accelerating voltage is 25kV, the beam current is 5pA, the center position 203 of the fluorescent screen is taken as the center of a circle, and a helium ion source is adopted to deposit tungsten hexacarbonyl with the diameter of 50nm according to concentric circles with the minimum radius of 10 mu m, the maximum radius of 150 mu m and the radius interval of 10 mu m, so that the measuring device of the electron beam divergence angle is obtained.
The measuring method of the electron beam divergence angle measuring device comprises the following steps:
adjusting the spot position of the electron beam on the fluorescent screen 1 to be at the central position 203 of the fluorescent screen, measuring and reading the spot size by a tungsten micro-nano graph 201 scale of the fluorescent screen 1, adopting a nano workpiece stage to move the fluorescent screen 1 back and forth along the incident direction of the electron beam, reading the moving distance by the step pitch of the workpiece stage, measuring the spot size of the electron beam on the fluorescent screen 1 by the tungsten micro-nano graph 201 scale of the fluorescent screen 1, calculating the ratio of the change value of the spot size to the moving distance of the fluorescent screen 1, wherein the ratio is the tangent value of the divergence angle of the electron beam, and calculating the divergence angle of the electron beam by the tangent value of a trigonometric function.
Example two
The device for measuring the divergence angle of an electron beam in this embodiment, as shown in fig. 1, includes a fluorescent screen 1 and a tungsten micro-nano pattern 201. The fluorescent screen 1 is a conventional fluorescent screen, is square and has the side length of 20-30 mm; the thickness is 3 mm. The tungsten micro-nano pattern 201 is concentric circles, the minimum radius is 10 micrometers, the maximum radius is 150 micrometers, the radius intervals are 20 micrometers, and a tungsten wire 202 obtained by tungsten hexacarbonyl deposition is cylindrical in shape and 150nm in diameter.
The preparation method of the measuring device for the electron beam divergence angle of the reflection type high-energy electron diffractometer comprises the following steps of:
1. surface cleaning of the fluorescent screen 1: placing the fluorescent screen 1 in a helium ion microscope, and vacuumizing to 10%-3When the pressure is lower than Pa, ions are adopted to clean for 5 minutes to remove oxides and pollutants on the surface of the fluorescent screen 1;
2. preparing a tungsten micro-nano pattern 201: after the fluorescent screen 1 is cleaned, the helium ion microscope is operated under the conditions that the accelerating voltage is 30kV, the beam current is 10pA, the center position 203 of the fluorescent screen is taken as the center of a circle, and a helium ion source is adopted to deposit tungsten hexacarbonyl with the diameter of 150nm according to concentric circles with the minimum radius of 10 mu m, the maximum radius of 150 mu m and the radius interval of 20 mu m, so that the measuring device of the electron beam divergence angle is obtained.
EXAMPLE III
The device for measuring the divergence angle of an electron beam in this embodiment, as shown in fig. 1, includes a fluorescent screen 1 and a tungsten micro-nano pattern 201. The fluorescent screen 1 is a conventional fluorescent screen, is square and has the side length of 25 mm; the thickness is 2 mm. The tungsten micro-nano pattern 201 is concentric circles, the minimum radius is 10 micrometers, the maximum radius is 150 micrometers, and the radius intervals are 15 micrometers, wherein a tungsten wire 202 obtained by tungsten hexacarbonyl deposition is cylindrical in shape, and the diameter is 100 nm.
The preparation method of the measuring device for the electron beam divergence angle of the reflection type high-energy electron diffractometer comprises the following steps of:
1. surface cleaning of the fluorescent screen 1: placing the fluorescent screen 1 in a helium ion microscope, and vacuumizing to 10%-3When the pressure is lower than Pa, ions are adopted to clean for 4 minutes to remove oxides and pollutants on the surface of the fluorescent screen 1;
2. preparing a tungsten micro-nano pattern 201: after the fluorescent screen 1 is cleaned, the helium ion microscope is operated under the conditions that the accelerating voltage is 28kV, the beam current is 8pA, the center position 203 of the fluorescent screen is taken as the center of a circle, and a helium ion source is adopted to deposit tungsten hexacarbonyl with the diameter of 100nm according to concentric circles with the minimum radius of 10 mu m, the maximum radius of 150 mu m and the radius interval of 15 mu m, so that the measuring device of the electron beam divergence angle is obtained.
In summary, the measuring device of the present invention utilizes ion assisted deposition of a helium ion microscope to construct the tungsten micro-nano pattern 201 on the fluorescent screen 1, and when the fluorescent screen 1 is moved, the shape and size of the spot of the electron beam on the fluorescent screen 1 will change, and the beam spot and the divergence angle of the electron beam are directly measured according to the size and size of the tungsten micro-nano pattern 201. The device has the advantages of multiple functions, high measurement precision, simple operation and the like; the preparation method has the advantages of high precision, easy control, simple process and the like.
The principle and the implementation mode of the invention are explained by applying a specific example, and the description of the embodiment is only used for helping to understand the method and the core idea of the invention; meanwhile, for a person skilled in the art, according to the idea of the present invention, the specific embodiments and the application range may be changed. In view of the above, the present disclosure should not be construed as limiting the invention.
Claims (9)
1. An electron beam divergence angle measuring apparatus characterized in that: the tungsten hexacarbonyl micro-nano pattern is deposited on the fluorescent screen through a helium ion microscope to form the tungsten micro-nano pattern, the tungsten micro-nano pattern is a plurality of concentric circles, and the center of each concentric circle is located at the center of the fluorescent screen.
2. The electron beam divergence angle measuring apparatus according to claim 1, characterized in that: the shape of the fluorescent screen is square, the side length of the fluorescent screen is 20-30mm, and the thickness of the fluorescent screen is 1-3 mm.
3. The electron beam divergence angle measuring apparatus according to claim 2, characterized in that: the side length of the fluorescent screen is 25mm, and the thickness is 2 mm.
4. The electron beam divergence angle measuring apparatus according to claim 1, characterized in that: the tungsten wire obtained by tungsten hexacarbonyl deposition is cylindrical and has the diameter of 50-150 nm; the concentric circles are formed by the tungsten wires.
5. The electron beam divergence angle measuring apparatus according to claim 4, characterized in that: the diameter of the tungsten wire is 100 nm.
6. The electron beam divergence angle measuring apparatus according to claim 4, characterized in that: the minimum radius of a circle in a plurality of concentric circles of the tungsten micro-nano graph is 10 micrometers, and the maximum radius is 150 micrometers; the radius interval between two adjacent concentric circles is 10-20 μm.
7. The electron beam divergence angle measuring apparatus according to claim 1, characterized in that: the ion auxiliary deposition function of the helium ion microscope adopts a helium ion source, the accelerating voltage is 25-30kV, and the beam current is 5-10 pA.
8. A method of manufacturing an electron beam divergence angle measuring apparatus for manufacturing the electron beam divergence angle measuring apparatus according to any one of claims 1 to 7, comprising the steps of:
1) cleaning the surface of the fluorescent screen: placing the fluorescent screen in a helium ion microscope, and cleaning with ions for 3-5 minutes when the vacuum is pumped to below 10-3Pa to remove oxides and pollutants on the surface of the fluorescent screen;
2) preparing a tungsten micro-nano pattern: after the fluorescent screen is cleaned, the helium ion microscope is operated under the conditions that the acceleration voltage is 25-30kV, the beam current is 5-10pA, the center position of the fluorescent screen is taken as the center of a circle, and a helium ion source is adopted to deposit tungsten hexacarbonyl with the diameter of 50-150nm according to concentric circles with the minimum radius of 10 mu m, the maximum radius of 150 mu m and the radius interval of 10-20 mu m, so that the electron beam divergence angle measuring device is obtained.
9. A method of measuring an electron beam divergence angle, applied to the electron beam divergence angle measuring apparatus according to any one of claims 1 to 7, characterized by comprising the steps of:
adjusting the spot position of an electron beam on a fluorescent screen to be in the center position of the fluorescent screen, measuring and reading the spot size by a tungsten micro-nano graphic scale of the fluorescent screen, adopting a nano workpiece stage to move the fluorescent screen back and forth along the incident direction of the electron beam, reading the moving distance by the step pitch of the workpiece stage, measuring the spot size of the electron beam on the fluorescent screen by the tungsten micro-nano graphic scale of the fluorescent screen, calculating the ratio of the change value of the spot size to the moving distance of the fluorescent screen, wherein the ratio is the tangent value of the divergence angle of the electron beam, and calculating the divergence angle of the electron beam by the tangent value of a trigonometric function.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010294120.2A CN111413727B (en) | 2020-04-15 | 2020-04-15 | Electron beam divergence angle measuring device and preparation method and measuring method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010294120.2A CN111413727B (en) | 2020-04-15 | 2020-04-15 | Electron beam divergence angle measuring device and preparation method and measuring method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111413727A true CN111413727A (en) | 2020-07-14 |
| CN111413727B CN111413727B (en) | 2021-12-28 |
Family
ID=71491936
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010294120.2A Active CN111413727B (en) | 2020-04-15 | 2020-04-15 | Electron beam divergence angle measuring device and preparation method and measuring method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111413727B (en) |
Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0217338A1 (en) * | 1985-09-30 | 1987-04-08 | Kabushiki Kaisha Toshiba | Method of forming a phosphor screen |
| US20100032302A1 (en) * | 2008-08-08 | 2010-02-11 | Fei Company | Method to direct pattern metals on a substrate |
| US20120080407A1 (en) * | 2006-07-14 | 2012-04-05 | Fei Company | Multi-Source Plasma Focused Ion Beam System |
| US20120138805A1 (en) * | 2010-12-02 | 2012-06-07 | Xtreme Technologies Gmbh | Method for the Spatially Resolved Measurement of Parameters in a Cross Section of a Beam Bundle of High-Energy Radiation of High Intensity |
| CN102592914A (en) * | 2012-02-28 | 2012-07-18 | 中国科学院上海光学精密机械研究所 | Method for controlling field emission electronic divergence angle by using nano carbon tube |
| CN103943437A (en) * | 2014-04-18 | 2014-07-23 | 北京大学 | Shaping device and method for field emission electron source emitter tip |
| CN104134604A (en) * | 2014-04-18 | 2014-11-05 | 北京大学 | Launching performance evaluation device and evaluation method for electron beam of field emission electron source |
| CN107783171A (en) * | 2017-09-01 | 2018-03-09 | 兰州空间技术物理研究所 | A kind of colloid microthruster beam divergence angle measuring system and method |
| CN109041393A (en) * | 2018-06-26 | 2018-12-18 | 中国科学院物理研究所 | A kind of generation device and method in ultrafast hard X ray source |
| CN109585244A (en) * | 2018-10-23 | 2019-04-05 | 中国科学院电工研究所 | The Electron Beam Focusing device of high power density |
| CN110055540A (en) * | 2019-06-10 | 2019-07-26 | 中国科学院电工研究所 | The method and surface of micro-nano structure tungsten material and its application with micro-nano structure are prepared in tungsten material surface |
-
2020
- 2020-04-15 CN CN202010294120.2A patent/CN111413727B/en active Active
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0217338A1 (en) * | 1985-09-30 | 1987-04-08 | Kabushiki Kaisha Toshiba | Method of forming a phosphor screen |
| US20120080407A1 (en) * | 2006-07-14 | 2012-04-05 | Fei Company | Multi-Source Plasma Focused Ion Beam System |
| US20100032302A1 (en) * | 2008-08-08 | 2010-02-11 | Fei Company | Method to direct pattern metals on a substrate |
| US20120138805A1 (en) * | 2010-12-02 | 2012-06-07 | Xtreme Technologies Gmbh | Method for the Spatially Resolved Measurement of Parameters in a Cross Section of a Beam Bundle of High-Energy Radiation of High Intensity |
| CN102592914A (en) * | 2012-02-28 | 2012-07-18 | 中国科学院上海光学精密机械研究所 | Method for controlling field emission electronic divergence angle by using nano carbon tube |
| CN103943437A (en) * | 2014-04-18 | 2014-07-23 | 北京大学 | Shaping device and method for field emission electron source emitter tip |
| CN104134604A (en) * | 2014-04-18 | 2014-11-05 | 北京大学 | Launching performance evaluation device and evaluation method for electron beam of field emission electron source |
| CN107783171A (en) * | 2017-09-01 | 2018-03-09 | 兰州空间技术物理研究所 | A kind of colloid microthruster beam divergence angle measuring system and method |
| CN109041393A (en) * | 2018-06-26 | 2018-12-18 | 中国科学院物理研究所 | A kind of generation device and method in ultrafast hard X ray source |
| CN109585244A (en) * | 2018-10-23 | 2019-04-05 | 中国科学院电工研究所 | The Electron Beam Focusing device of high power density |
| CN110055540A (en) * | 2019-06-10 | 2019-07-26 | 中国科学院电工研究所 | The method and surface of micro-nano structure tungsten material and its application with micro-nano structure are prepared in tungsten material surface |
Non-Patent Citations (2)
| Title |
|---|
| 江孝国: "电子束发散角的直接测量技术模拟研究", 《强激光与粒子束》 * |
| 马玉田: "氦离子显微镜对钨中氦行为的实验研究", 《物理学报》 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN111413727B (en) | 2021-12-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE102016106119B4 (en) | Energy filter element for ion implantation systems for use in the production of wafers | |
| CN101548366B (en) | Method of planarizing solid surface with gas cluster ion beam and solid surface planarizing apparatus | |
| CN101508419B (en) | Processing method for nano-pole forest | |
| EP1920453A2 (en) | Method for the production of a multilayer electrostatic lens array | |
| DE1962099C3 (en) | Optical index grating and process for its manufacture | |
| CN1894157B (en) | Method for forming wavy nanostructures | |
| CN108538425B (en) | Preparation method of multilayer film X-ray zone plate | |
| CN111413727B (en) | Electron beam divergence angle measuring device and preparation method and measuring method thereof | |
| CN103094031B (en) | Charged particle beam system aperture | |
| DE2520556A1 (en) | METHOD FOR SELECTIVE REMOVAL OF MATERIAL FROM THE SURFACE OF A WORKPIECE | |
| Idir et al. | A one-dimensional ion beam figuring system for x-ray mirror fabrication | |
| JP6925691B2 (en) | Manufacturing method of molded base material for diffraction grating light guide plate and manufacturing method of diffraction grating light guide plate | |
| WO2010112827A2 (en) | Method and apparatus for producing three dimensional nano and micro scale structures | |
| DE102006029799A1 (en) | Reflective optical element and method for its characterization | |
| DE2428225A1 (en) | METHOD AND ARRANGEMENT FOR THE PRECISION ALIGNMENT OF AN ELECTRON BEAM IN RELATION TO SELECTED AREAS OF A MAIN AREA OF A BODY | |
| US20100078855A1 (en) | Methods for fabricating large area nanoimprint molds | |
| EP3234695A1 (en) | Mirror device | |
| US7723705B2 (en) | Techniques for measuring ion beam emittance | |
| US11371134B2 (en) | Nanowire grid polarizer on a curved surface and methods of making and using | |
| CN115132578A (en) | Electrode pair with nanogap and preparation method thereof | |
| JP2001133615A (en) | Method and device for producing diffraction grating | |
| US9321633B2 (en) | Process for producing 3-dimensional structure assembled from nanoparticles | |
| CN101966977A (en) | Size reduction method used for micro-nano material and electrode manufacturing method | |
| US20060212977A1 (en) | Characterizing electron beams | |
| DE102016015823B3 (en) | Method for ion implantation |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |