CN111398694A - Integrated BGO crystal optical waveguide closed-loop electric field detection system with reciprocal optical path - Google Patents

Integrated BGO crystal optical waveguide closed-loop electric field detection system with reciprocal optical path Download PDF

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CN111398694A
CN111398694A CN202010141787.9A CN202010141787A CN111398694A CN 111398694 A CN111398694 A CN 111398694A CN 202010141787 A CN202010141787 A CN 202010141787A CN 111398694 A CN111398694 A CN 111398694A
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optical waveguide
bgo
electric field
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bgo crystal
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CN111398694B (en
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陈秋荻
杨铭
胡煌
张宇
王瑾
龙丹
韩炎晖
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China University of Geosciences
Beijing Dongfang Measurement and Test Institute
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China University of Geosciences
Beijing Dongfang Measurement and Test Institute
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    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
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Abstract

The invention provides an integrated BGO crystal optical waveguide closed-loop electric field detection system with reciprocal optical paths, which comprises an S L D broadband light source, a circulator, a polarizer, a phase modulator, a BGO integrated optical waveguide electric field sensor, a photoelectric detector and a signal processing module, wherein the BGO integrated optical waveguide electric field sensor is an optical waveguide structure which is engraved on a symmetrical BGO crystal by femtosecond laser and has reciprocal optical paths, so that an orthogonal polarization mode passes through the two crystals and then passes through the optical paths with the same length, and the phase difference generated by natural birefringence is successfully counteracted.

Description

Integrated BGO crystal optical waveguide closed-loop electric field detection system with reciprocal optical path
Technical Field
The invention belongs to the technical field of electric field detection, and particularly relates to an integrated BGO crystal optical waveguide closed-loop electric field detection system with a reciprocal optical path.
Background
The electric field measurement has important significance in the research fields of high voltage, high power pulse, high energy physics, electrostatic protection and the like.
The traditional active electric field sensor has the defects of large volume, easy drift and large electromagnetic interference. Along with the development of the photoelectric technology, the research of the optical electric field sensor is emphasized by people, and compared with the traditional active electric field sensor, the optical electric field sensor has the advantages of small size, high precision, high sensitivity, large linear dynamic range, wide frequency response and the like, and has wide application prospect and research value.
The method adopts various optical devices, inevitably introduces errors, increases the volume and the manufacturing cost of the optical electric field sensor, and for the integrated optical waveguide type electric field sensor, because L N (lithium niobate, L iNbO)4) The crystal is easy to carve the optical waveguide, so that most of the optical waveguides prepared by the crystal are used for sensing, and the crystal has the advantages of stable structure and small volume. This type of method generally reduces the drift of the operating point by phase modulating or tuning the laser wavelength to ensure that the operating point is in the linear region, but since the tunable optical device is also affected by environmental factors, the phase error due to environmental factors still cannot be completely eliminated.
Due to BGO (bismuth germanate, Bi)4Ge3O12) The crystal has the characteristics of no pyroelectric effect, no optical rotation and no natural birefringence theoretically, and is the preferred material for manufacturing the optical electric field sensor based on the Pockels effect. However, it is not limited toDue to the influence of the production process, the BGO crystal inevitably contains some impurities and generates natural linear birefringence during the growth, processing and annealing processes. In practical applications, under the influence of environmental factors such as temperature change, vibration and gas pressure, the BGO crystal is also subjected to external stress to generate stress birefringence, so that the additional birefringence of the BGO crystal needs to be compensated.
Disclosure of Invention
In view of this, the invention provides an integrated BGO crystal optical waveguide closed-loop electric field detection system with high measurement sensitivity and high precision and with optical path reciprocity to solve the defects in the prior art.
In order to achieve the purpose, the integrated BGO crystal optical waveguide closed-loop electric field detection system adopting the technical scheme comprises an S L D broadband light source, a circulator, a polarizer, a phase modulator, a BGO integrated optical waveguide electric field sensor, a photoelectric detector and a signal processing module, wherein the circulator comprises a first port, a second port and a third port, a light source emitted by the S L D broadband light source enters the circulator from the first port, the second port of the circulator is connected with the polarizer, one end of the phase modulator is welded with a 45-degree counter shaft of a tail fiber of the polarizer, the other end of the phase modulator is sequentially connected with a collimating lens and a Faraday rotation mirror, the BGO integrated optical waveguide electric field sensor is arranged on an emergent light path of the Faraday rotation mirror, the photoelectric detector is connected with the third port of the circulator, and the signal processing module is electrically connected with the photoelectric detector.
Further, the signal processing module includes: the photoelectric detector comprises a preamplifier, an A/D converter, a digital signal processing unit and a D/A converter, wherein the input end of the preamplifier is connected with the output end of the photoelectric detector, the input end of the A/D converter is connected with the output end of the preamplifier, the input end of the digital signal processing unit is connected with the output end of the A/D converter, and the input end of the D/A converter is connected with the output end of the digital signal processing unit.
Further, the D/A converter is also connected with a phase modulator.
Further, still include: and the polarization maintaining optical fiber is used for connecting the phase modulator and the collimating lens.
Further, still include: a single mode fiber for connecting the photodetector and the third port of the circulator.
Furthermore, the BGO integrated optical waveguide electric field sensor comprises a first BGO crystal and a second BGO crystal which are perpendicular to each other and are tightly attached to each other, a femtosecond laser is used for engraving a first optical waveguide and a second optical waveguide in the first BGO crystal and the second BGO crystal, the first optical waveguide comprises a first curved part, a second curved part and a third curved part, the first curved part is engraved on the first BGO crystal, the third curved part is engraved on the second BGO crystal, the second optical waveguide comprises a fourth curved part, a first straight line part and a second straight line part, the fourth curved part is engraved on the first BGO crystal, the first curved part and the fourth curved part are symmetrical and communicated with each other, the second curved part and the third curved part are symmetrical and communicated with each other, and the first straight line part and the second straight line part are symmetrical and communicated with each other.
Further, the ends of the third curved part and the second straight line part are plated with metal reflecting films.
Furthermore, metal electrodes are arranged on two sides of the first straight line part.
The invention has the beneficial effects that:
firstly, the invention adopts the femtosecond laser technology to process and manufacture the reflective BGO integrated optical waveguide structure with reciprocity, reduces the volume of the BGO crystal electric field sensor based on the Pockels effect, and increases the measurement precision.
The invention makes the two orthogonal polarization modes pass through the same light path outside the crystal in the positive and negative transmission directions by rotating the two orthogonal polarization modes in the light path twice through the Faraday rotation mirror, so that the measuring system has quasi-reciprocity, and the returned optical signal only carries the phase difference caused by the electro-optical crystal.
And thirdly, the invention designs and manufactures a reciprocal optical path by adopting two BGO crystals of the same batch, the same material and the same cutting mode, eliminates phase errors caused by natural birefringence, temperature change and gas pressure, and ensures that output optical signals of the BGO integrated optical waveguide only carry phase differences caused by modulation of an electric field to be measured and arm length difference of the first optical waveguide and the second optical waveguide.
And fourthly, the phase difference generated by the arm length difference of the first optical waveguide and the second optical waveguide is introduced by designing an asymmetric integrated optical waveguide structure, so that the nonlinear error of the measuring system is reduced.
Fifthly, by introducing feedback phase difference
Figure BDA0002399334490000031
The non-linearity error of the system can be further reduced while the dynamic range of the system is increased.
And sixthly, when the power frequency alternating electric field is measured, compensating the phase error generated by stress birefringence in a digital square wave phase modulation mode, and further reducing the measurement error of the system.
Drawings
FIG. 1 is a structural block diagram of an integrated BGO crystal optical waveguide closed-loop electric field detection system with reciprocal optical paths according to an embodiment of the present invention;
FIG. 2 is a schematic structural diagram of an integrated BGO crystal optical waveguide in an embodiment of the invention;
FIG. 3 is a schematic structural diagram of a BGO crystal in an embodiment of the invention;
fig. 4 is a schematic structural diagram of the first BGO crystal and the second BGO crystal in the embodiment of the present invention.
The reference numbers of the device comprise a 1-S L D broadband light source, a 2-circulator, a 3-polarizer, a 4-phase modulator, a 5-collimating lens, a 6-BGO integrated optical waveguide electric field sensor, a 61-first BGO crystal, a 62-second BGO crystal, a 611-first optical waveguide, a 6111-first curved part, a 6112-second curved part, a 6113-third curved part, a 612-second optical waveguide, a 6121-third curved part, a 6122-first straight line part, a 6123-second straight line part, a 7-photoelectric detector, an 8-signal processing module, an 81-preamplifier, an 82-A/D converter, an 83-digital signal processing unit, an 84-D/A converter, a 9-Faraday optical rotation mirror and a 10-polarization-maintaining optical fiber.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention. In addition, the technical features involved in the embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
As shown in fig. 1, an embodiment of the present invention provides an integrated BGO crystal optical waveguide closed-loop electric field detection system with an optical path reciprocity, which includes an S L D broadband light source 1, a circulator 2, a polarizer 3, a phase modulator 4, a collimating lens 5, a BGO integrated optical waveguide electric field sensor 6, a photodetector 7, a signal processing module 8, and a faraday rotator 9, wherein the S L D broadband light source 1 is connected to a first port of the circulator 2 for generating laser light, the polarizer 3 is connected to a second port of the circulator 2 for receiving the laser light transmitted from the circulator 2 and generating linearly polarized light, the phase modulator 4 is welded to a 45 ° stub of the polarizer 3 in an axial direction to split the linearly polarized light into two orthogonal linear polarization modes, the collimating lens 5 collimates and outputs the two orthogonal linear polarization modes to a third polarizer 9, the faraday rotator 9 is used for rotating the two orthogonal polarization modes input into the BGO integrated optical waveguide electric field sensor 6 and an optical signal reflected by the rotating BGO integrated optical waveguide electric field sensor 6 and converting the optical signal into an electrical signal with a phase difference according to be detected, the electrical signal, the optical signal is output by the optical waveguide integrated optical waveguide electric field modulator 2 and the optical waveguide electric field modulator 2, the optical signal is converted into an electrical signal to be detected according to the electrical signal, the optical signal is output by the optical signal processing module 2, and the optical waveguide.
In this embodiment, the signal processing module 8 includes a preamplifier 81, an a/D converter 82, a digital signal processing unit 93, and a D/a converter 84, the preamplifier 81 is configured to receive the electrical signal output by the photodetector 7, the electrical signal is input to the digital signal processing unit 83 after being subjected to AD conversion for processing, and the digital signal processing unit 83 performs digital output on the measurement result on one hand, and performs output value correction on the BGO integrated optical waveguide electric field sensor 6 through the dynamic output square wave and step wave control phase modulator 4 on the other hand.
In the present embodiment, the phase modulator 4 and the collimator lens 5 are connected by a polarization maintaining fiber 10, and the photodetector 7 and the third port of the circulator 2 are connected by a single mode fiber.
As shown in fig. 2, the BGO integrated optical waveguide electric field sensor 6 includes two first BGO crystal 61 and second BGO crystal 62 that are perpendicular to each other, and a first optical waveguide 611 and a second optical waveguide 612 are etched inside the first BGO crystal 61 and the second BGO crystal 62 by using femtosecond laser, where the first optical waveguide 611 includes a first curved portion 6111 and a second curved portion 6112 etched on the first BGO crystal 61, and a third curved portion 6113 etched on the second BGO crystal 62, and the second optical waveguide 612 includes a fourth curved portion 6121 etched on the first BGO crystal 61, a first linear portion 6122, and a second linear portion 6123 etched on the second BGO crystal 62. The first curved portion 6111 and the fourth curved portion 6121 are vertically symmetrical and communicated, the second curved portion 6112 and the third curved portion 6113 are horizontally symmetrical and communicated, the first linear portion 6122 and the second linear portion 6123 are horizontally symmetrical and communicated, a metal reflective film is plated on the end faces of the ends of the third curved portion 6113 and the second linear portion 6123, the two orthogonal polarization modes are divided into two orthogonal polarization modes with the same optical power and polarization state through symmetrical Y-shaped waveguides, the two orthogonal polarization modes enter the two linear waveguides from ports 1 and 2 respectively, and are reflected back to a Y branch through the metal reflective film to synthesize a path of optical signal, metal electrodes are arranged on two sides of the first linear portion 6122 and are used for inducing an electric field signal and performing phase modulation on polarized light transmitted on the second optical waveguide 612.
The integrated BGO crystal optical waveguide closed-loop electric field detection system with the reciprocal optical path has the working principle that:
the optical fiber polarization detection device comprises a S L D broadband light source 1, a polarizer 3, a Faraday rotator 4, a Faraday rotator 9, a BGO integrated optical waveguide electric field sensor 6, a first optical waveguide BGO crystal 61, a second optical waveguide BGO integrated optical waveguide electric field sensor 6, a third optical waveguide BGO integrated optical waveguide electric field sensor 6, a fourth optical waveguide BGO integrated optical waveguide electric field sensor 6, a third optical waveguide BGO integrated optical waveguide electric field sensor 6, a fourth optical waveguide electric field sensor 6, a third optical waveguide BGO integrated optical waveguide electric field sensor 6, a fourth optical waveguide electric field sensor 6, a third optical waveguide electric field sensor, a fourth optical waveguide electric field sensor 6, a third optical waveguide electric field sensor, a fourth optical waveguide electric field sensor, a third optical waveguide electric field sensor, a fourth optical waveguide electric field sensor, a third optical waveguide electric field sensor, a fourth optical waveguide electric field sensor, a fourth optical waveguide electric field optical crystal electric field optical field.
The measuring principle of the BGO integrated optical waveguide electric field sensor 6 is based on the linear electro-optic effect, namely the crystal refractive index change caused by an electric field, the BGO crystal has no natural birefringence theoretically, however, because of the influence of the production process, the BGO crystal inevitably contains some impurities and generates natural birefringence in the growth, processing and annealing processes of the BGO crystal, and the natural birefringence of the BGO crystal changes along with the temperature change, so the phase difference generated by the natural birefringence of the BGO crystal needs to be compensated.
In the invention, the light passing direction and the electric field applying direction of the BGO crystal are shown in (1) in fig. 3, the electric field direction is vertical to the (001) plane, the light passing direction is vertical to the (110) plane, the refractive index of the BGO crystal is changed under the action of the electric field, and a new main axis of the refractive index is wound around x from the original three main axes3Rotated by 45 deg. as shown in fig. 3 (2).
The new principal axis index becomes:
Figure BDA0002399334490000061
when light is within the crystal along x1'Direction propagation, with a clear length of L, the phase difference between two orthogonal polarization modes is'
Figure BDA0002399334490000062
Due to the existence of natural birefringence, the refractive index of the BGO crystal in the new principal axis direction includes not only the phase difference generated by electric field modulation, but also the phase difference caused by natural birefringence, and the magnitude of the natural birefringence of the BGO crystal is affected by temperature, so it needs to be compensated by optical path design. The first optical waveguide 611 and the second optical waveguide 612 which are made of the same material and cut in the same batch are adopted, and only the electric field conditions of the two waveguides are different, and the carried natural birefringence and the temperature environment in which the two waveguides are located are the same, so that the refractive index changes caused by the natural birefringence of the first BGO crystal 61 and the second BGO crystal 62 are also the same. The (001) planes of the first BGO crystal 61 and the second BGO crystal 62 are vertically connected as shown in fig. 4.
Flying is adopted on the first BGO crystal 61 and the second BGO crystal 62 which are connectedThe second laser technique produces an optical waveguide structure as shown in figure 2. In the first BGO crystal 61, the two orthogonal polarization modes are respectively parallel to the main axis of induction x1'、x3". Regardless of the waveguide loss and the splitting ratio of the Y-branch, only phase errors due to electric field and natural birefringence are discussed, and the electric fields at Port3, Port4 after the two polarized light beams pass through the two waveguide arms are represented as:
Figure BDA0002399334490000063
Figure BDA0002399334490000064
wherein E isinFor input of electric field, L1The length of the third curve 6113 on the first optical waveguide 611, L2The length of the second linear portion 6123 of the second optical waveguide 612, β0Is a propagation constant of the first optical waveguide 611 and the second optical waveguide 612,
Figure BDA0002399334490000065
for application to straight waveguide L2The applied voltage makes the two polarization modes generate phase difference,12the light passing length of the light in the first BGO crystal 61 and the second BGO crystal 62 is L1、L2When the retardation is increased, the retardation is caused by natural birefringence.
Because the first BGO crystal 61 and the second BGO crystal 62 are vertically connected, and the main axis direction of the second BGO crystal 62 is rotated by 90 ° around the light-passing direction with respect to the first BGO crystal 61, the refractive indices of the corresponding natural birefringence in the polarization direction in the first BGO crystal 61 and the second BGO crystal 62 are interchanged, after the same light-passing length is passed, the magnitude of the phase change generated by the natural birefringence in the two orthogonal polarization modes is the same but the direction is opposite, the two waveguide arms of the optical waveguide structure having the reciprocal optical path are structurally symmetrical in the two crystals, so that the two orthogonal polarization modes in the first optical waveguide 611 and the second optical waveguide 612 pass through the optical paths with the same length after passing through the first BGO crystal 61 and the second BGO crystal 62, and the phase difference generated by the natural birefringence is successfully cancelled. When the temperature environment changes, since the temperature environment in the first BGO crystal 61 and the second BGO crystal 62 is the same, the magnitude of the corresponding change in natural birefringence should be the same, and thus the phase difference caused by natural birefringence can still be cancelled. That is, only the phase difference resulting from electric field modulation is carried at Port5, Port 6:
Figure BDA0002399334490000071
Figure BDA0002399334490000072
the reflected optical path is the same as the incident optical path, and due to the reciprocal structure, the additional phase difference caused by the natural birefringence is cancelled out, and the electric field of the reflected light at Port0 can be expressed as:
Figure BDA0002399334490000073
the output optical signal can be expressed as:
Figure BDA0002399334490000074
wherein the content of the first and second substances,
Figure BDA0002399334490000075
Figure BDA0002399334490000076
the phase difference is caused by the arm length difference Δ L, and is a phase error due to stress birefringence.
Since demodulation is not facilitated due to the non-linear relationship between the electric field modulation phase difference and the output optical signal, the arm length difference Δ L of the first optical waveguide 611 and the second optical waveguide 612 is adjusted while keeping the second curved portion 6112 and the third curved portion 6113, the first linear portion 6122, and the second linear portion 6123 of the first BGO crystal 61 and the second BGO crystal 62 respectively symmetrical, so that the phase difference is modulated in such a manner that the phase difference is not linear with respect to the output optical signal
Figure BDA0002399334490000077
When in use
Figure BDA0002399334490000078
And at the time of the smaller value,
Figure BDA0002399334490000079
and IoutA linear relationship can be approximated.
The BGO crystal has an elasto-optical effect, thermal stress generated by temperature change and gas pressure act on the BGO crystal to enable optical signals to generate additional error phase difference, stress distribution on each main shaft of the BGO crystal is often uneven on a light passing path, and for stress birefringence phase difference which cannot be eliminated by a reciprocal light path structure, the stress birefringence phase difference can be obtained by adopting a filtering method and is compensated by square wave modulation. For the measurement of a steady-state electric field or a low-frequency electric field, the measurement error of the method is still larger, so that the additional phase difference of the output optical signals needs to be reduced by designing a reciprocal optical path structure to improve the measurement accuracy.
When the electric field to be measured
Figure BDA0002399334490000081
When larger, the demodulation result is
Figure BDA0002399334490000082
The sine function still has the problem of input and output nonlinearity, and in order to further reduce the nonlinear error of electric field measurement and increase the dynamic measurement range, a step wave feedback modulation method is adopted to generate and introduce
Figure BDA0002399334490000083
Feedback phase difference with equal magnitude and opposite sign
Figure BDA0002399334490000084
The output optical signal after introducing the feedback phase difference is:
Figure BDA0002399334490000085
due to the fact that
Figure BDA0002399334490000086
And the total phase difference of the output optical signals is kept near a zero point, and the nonlinear error of the measuring system is reduced.
In summary, the integrated BGO crystal optical waveguide closed-loop electric field detection system with reciprocal optical path is adopted, the BGO crystal is applied to an electric field sensor, so that the electric field measurement is more accurate, two orthogonal polarization modes in the optical path are rotated twice by the Faraday rotation mirror, so that the two orthogonal polarization modes walk on the crystal part in the forward and reverse transmission directions to pass through the same optical path, the measurement system has quasi-reciprocity, and the returned optical signal only carries the phase difference caused by the electro-optic crystal; the mutual-inductance optical path is designed and manufactured by adopting two BGO crystals of the same batch, the same material and the same cutting mode, so that the phase error caused by natural birefringence, temperature change and gas pressure is eliminated, and the output optical signal of the BGO integrated optical waveguide only carries the phase difference caused by the modulation of an electric field to be measured and the length difference of a waveguide arm; by designing an integrated optical waveguide structure with asymmetric length, the phase difference generated by the arm length difference of the waveguide is introduced, and the nonlinear error of the measuring system is reduced.
It will be understood by those skilled in the art that the foregoing is only a preferred embodiment of the present invention, and is not intended to limit the invention, and that any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the scope of the present invention.

Claims (8)

1. The integrated BGO crystal optical waveguide closed-loop electric field detection system with the reciprocal optical path is characterized by comprising an S L D broadband light source, a circulator, a polarizer, a phase modulator, a BGO integrated optical waveguide electric field sensor, a photoelectric detector and a signal processing module, wherein the circulator comprises a first port, a second port and a third port, a light source emitted by the S L D broadband light source enters the circulator from the first port, the second port of the circulator is connected with the polarizer, one end of the phase modulator is in 45-degree axial butt fusion with a tail fiber of the polarizer, the other end of the phase modulator is sequentially connected with a collimating lens and a Faraday rotation mirror, the BGO integrated optical waveguide electric field sensor is arranged on an emergent light path of the Faraday rotation mirror, the photoelectric detector is connected with the third port of the circulator, and the signal processing module is electrically connected with the photoelectric detector.
2. The system of claim 1, wherein the signal processing module comprises: the photoelectric detector comprises a preamplifier, an A/D converter, a digital signal processing unit and a D/A converter, wherein the input end of the preamplifier is connected with the output end of the photoelectric detector, the input end of the A/D converter is connected with the output end of the preamplifier, the input end of the digital signal processing unit is connected with the output end of the A/D converter, and the input end of the D/A converter is connected with the output end of the digital signal processing unit.
3. The optical reciprocity integrated BGO crystal optical waveguide closed loop electric field detection system of claim 2, wherein the D/a converter is further connected to a phase modulator.
4. The system of claim 1, further comprising: and the polarization maintaining optical fiber is used for connecting the phase modulator and the collimating lens.
5. The system of claim 1, further comprising: a single mode fiber for connecting the photodetector and the third port of the circulator.
6. The system for detecting the closed-loop electric field of the integrated BGO crystal optical waveguide with reciprocal optical path as claimed in claim 1, wherein the BGO integrated optical waveguide electric field sensor comprises two first BGO crystals and second BGO crystals perpendicular to and closely attached to each other, and further comprises a femtosecond laser to etch the first optical waveguide and the second optical waveguide in the first BGO crystals and the second BGO crystals, wherein the first optical waveguide comprises a first curved part, a second curved part and a third curved part, the first curved part is etched on the first BGO crystal, the third curved part is etched on the second BGO crystal, the second optical waveguide comprises a fourth curved part, a first straight part and a second straight part, the first curved part and the fourth curved part are vertically symmetrical and communicated, the second curved part and the third curved part are bilaterally symmetrical and communicated, and the first straight part and the second straight part are bilaterally symmetrical and communicated.
7. The system of claim 6, wherein the ends of the third curved portion and the second straight portion are plated with metal reflective films.
8. The integrated BGO crystal optical waveguide closed-loop electric field detection system of claim 6, wherein metal electrodes are disposed on both sides of the first linear portion.
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