CN111393782A - Preparation method of semiconductor composite material - Google Patents
Preparation method of semiconductor composite material Download PDFInfo
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- CN111393782A CN111393782A CN202010266958.0A CN202010266958A CN111393782A CN 111393782 A CN111393782 A CN 111393782A CN 202010266958 A CN202010266958 A CN 202010266958A CN 111393782 A CN111393782 A CN 111393782A
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- black phosphorus
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- phosphorus alkene
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L33/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Compositions of derivatives of such polymers
- C08L33/04—Homopolymers or copolymers of esters
- C08L33/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, which oxygen atoms are present only as part of the carboxyl radical
- C08L33/10—Homopolymers or copolymers of methacrylic acid esters
- C08L33/12—Homopolymers or copolymers of methyl methacrylate
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/02—Polyamines
- C08G73/026—Wholly aromatic polyamines
- C08G73/0266—Polyanilines or derivatives thereof
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L23/00—Compositions of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Compositions of derivatives of such polymers
- C08L23/02—Compositions of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Compositions of derivatives of such polymers not modified by chemical after-treatment
- C08L23/04—Homopolymers or copolymers of ethene
- C08L23/08—Copolymers of ethene
- C08L23/0846—Copolymers of ethene with unsaturated hydrocarbons containing other atoms than carbon or hydrogen atoms
- C08L23/0853—Vinylacetate
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L27/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Compositions of derivatives of such polymers
- C08L27/02—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Compositions of derivatives of such polymers not modified by chemical after-treatment
- C08L27/12—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Compositions of derivatives of such polymers not modified by chemical after-treatment containing fluorine atoms
- C08L27/16—Homopolymers or copolymers or vinylidene fluoride
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/02—Elements
- C08K2003/026—Phosphorus
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K2201/00—Specific properties of additives
- C08K2201/011—Nanostructured additives
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- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Abstract
The invention relates to a preparation method of a semiconductor composite material, which comprises the steps of controlling the temperature to be-2-10 ℃ under the condition of introducing nitrogen, adding 3-6 parts of black phosphorus alkene, 0.1-0.5 part of surfactant, 4-12 parts of aniline subjected to reduced pressure distillation, 0.2-2 parts of 0.5-2 mol/L hydrochloric acid and 50-70 parts of water into a reactor, uniformly stirring at a high speed, adding 6-20 parts of oxidant, continuously reacting for 6-12 hours at-2-10 ℃, filtering and drying to obtain the black phosphorus alkene-polyaniline compound.
Description
Technical Field
The invention relates to a divisional application of a Chinese patent 'a semiconductor composite material based on black phosphorus alkene, a preparation method and an application', wherein the application date is 11 months and 10 days in 2017, and the application number is 201711102151.8. The invention belongs to the field of semiconductor composite materials, and relates to a preparation method of a semiconductor composite material
Technical Field
The polymer semiconductive material has wide application prospect, and is mainly used for stranded conductors and insulated shields of medium and high voltage cables in the cables by taking the electric field as an example. In addition to the structural type conductive polymers, other conductive polymers are prepared by adding a conductive filler to the polymer to prepare a conductive material. The filler mainly used is conductive carbon black, and a large amount of carbon black (30-50 mass percent) is often required to be added, but the mechanical properties of the material are affected by the excessively high content of the carbon black. Graphene is a novel carbon nano material with a two-dimensional structure, adjacent carbon atoms in the graphene are combined through covalent bonds, electrons on a p-orbit of each carbon atom can freely move in a large pi bond, so that the graphene has excellent conductivity, the conductivity can reach 106s/cm, and the conductivity of a polymer can be greatly improved by taking the graphene as a filler.
However, since the specific surface area of graphene is very large, van der waals forces between sheets make it very easy to agglomerate. Therefore, when graphene is added into a polymer, due to poor interface effect between the graphene and the polymer, an agglomeration phenomenon is often easy to occur, so that the graphene is difficult to disperse in the polymer. The dispersibility of graphene in a polymer is effectively improved by chemically modifying the graphene, but the complete conjugated structure of the graphene is destroyed, so that the performance of the graphene is reduced, and the practical application of the graphene is influenced.
Black phosphorus is a crystal having a wavy layered structure similar to graphite, and atomic layers thereof are bonded by van der waals force and easily exfoliated into single or few layers of nano-platelets. In the monoatomic layer, each phosphorus atom and 3 adjacent phosphorus atoms form a pleated honeycomb structure with covalent bonds, the black phosphorus alkene is a natural p-type semiconductor, when valence band electrons transit to a conduction band, the valence band electrons are vertically transited, the wave vector of the electrons is unchanged, so the black phosphorus alkene has a direct band gap, the band gap is a direct band gap no matter how many layers are stripped, the band gap can be regulated and controlled by the number of layers within the range of 0.3eV to 1.5eV, the black phosphorus alkene has obvious anisotropy, the elastic modulus in the X direction is small,and the effective mass of crystal electrons is only 0.1-0.2 m0This determines that the black phosphorus alkene has higher electron mobility, and the electron mobility of single-layer black phosphorus alkene can reach 10000cm2V · s. But the application of the black phosphorus alkene in the field of semiconductor composite materials is less.
Disclosure of Invention
To overcome the disadvantages and shortcomings of the prior art, it is an object of the present invention to provide a black phosphene-based semiconductor composite.
Another object of the present invention is to improve the method for preparing the black phosphorus alkene-based semiconductor composite material.
The invention also aims to improve the application of the semiconductor composite material based on the black phosphorus alkene in the fields of photographic equipment, optical instruments, IC products, semiconductor products and photoelectric products.
The semiconductor composite material based on the black phosphorus alkene comprises the following raw material components in parts by weight: 10-20 parts of black phosphorus alkene-polyaniline compound, 50-60 parts of film forming substrate, 0-15 parts of filler, 1-5 parts of cross-linking agent and 200-250 parts of organic solvent.
The film forming substrate is at least one of ethylene-vinyl acetate copolymer, polyvinylidene fluoride, polymethyl methacrylate and polyvinyl chloride.
The filler is at least one of kaolin, bentonite, talcum powder and mica powder.
The cross-linking agent is at least one of dicumyl peroxide, benzoyl peroxide, 1, 4-di-tert-butylperoxyisopropyl benzene, tert-butyl peroxycarbonate, tert-butyl cumyl peroxide and cumyl peroxide.
The organic solvent is at least one of petroleum ether, toluene, xylene, trimethylbenzene and D40 solvent. The D40 solvent oil is prepared by using distillate oil as raw material, and performing high-pressure hydrofining under 130kPa and fractionation, and can be purchased in the market.
The preparation method of the black phosphorus alkene-polyaniline compound comprises the steps of introducing nitrogen, controlling the temperature to be-2-10 ℃, adding 3-6 parts of black phosphorus alkene, 0.1-0.5 part of surfactant, 4-12 parts of aniline subjected to reduced pressure distillation, 0.2-2 parts of 0.5-2 mol/L hydrochloric acid and 50-70 parts of water into a reactor, uniformly stirring at a high speed, adding an oxidant containing 6-20 parts of oxidant, continuing to react for 6-12 hours at-2-10 ℃, filtering and drying to obtain the black phosphorus alkene-polyaniline compound, wherein the surfactant is at least one of sodium dodecyl sulfate, sodium dodecyl benzene sulfonate, sodium didodecyl phenyl ether disulfonate, sodium stearate and sodium laurate, and the oxidant is at least one of potassium persulfate, ammonium persulfate, potassium dichromate, potassium iodate, ferric trichloride and hydrogen peroxide.
The preparation method of the semiconductor composite material based on the black phosphorus alkene comprises the following steps: dissolving a film-forming substrate in an organic solvent, then sequentially adding a black phosphorus alkene-polyaniline compound and a cross-linking agent, fully and uniformly mixing, and finally heating to 120-180 ℃, removing the solvent and pressurizing to obtain the semiconductor composite material.
Compared with the prior art, the invention has the following advantages or beneficial results: (1) the black phosphorus alkene-polyaniline is disclosed as a semiconductor medium for the first time, and due to the special two-dimensional nano structure of the black phosphorus alkene, the volume resistivity of the semiconductor composite material at 20 ℃ is 6-11 omega cm under the condition of not adding conductive powder, so that the application prospect is wide; (2) the black phosphorus alkene two-dimensional nano structure and aniline form a conjugated structure, polymerized polyaniline and black phosphorus are uniformly compounded, and the material performance is more stable.
Detailed Description
Example 1
A semiconductor composite material based on black phosphorus alkene comprises the following raw material components: 50 parts of polymethyl methacrylate, 18 parts of a black phosphorus alkene-polyaniline compound, 2 parts of dicumyl peroxide and 200 parts of dimethylbenzene.
The preparation method of the semiconductor composite material based on the black phosphorus alkene comprises the following steps: dissolving a film-forming substrate in an organic solvent, then sequentially adding a black phosphorus alkene-polyaniline compound and a cross-linking agent, fully and uniformly mixing, and finally heating to 140 ℃, removing the solvent and pressurizing to obtain the semiconductor composite material.
The preparation method of the black phosphorus alkene-polyaniline compound comprises the steps of introducing nitrogen, controlling the temperature at 6 ℃, adding 3 parts of black phosphorus alkene, 0.4 part of sodium didodecyl phenyl ether disulfonate, 9 parts of aniline subjected to reduced pressure distillation, 1.2 parts of 1 mol/L hydrochloric acid and 65 parts of water into a reactor, stirring at a high speed to disperse uniformly, adding ammonium persulfate containing 12 parts of ammonium persulfate, continuing to react for 8 hours at 6 ℃, filtering, and drying to obtain the black phosphorus alkene-polyaniline compound.
Comparative example 1: the black phosphorus in this example was replaced with graphene, and the graphene semiconductor composite material was prepared according to the same process, i.e., comparative example 1.
Example 2
A semiconductor composite material based on black phosphorus alkene comprises the following raw material components: 60 parts of ethylene-vinyl acetate copolymer, 15 parts of black phosphorus alkene-polyaniline compound, 15 parts of kaolin, 3 parts of 1, 4-di-tert-butylperoxyisopropyl benzene and 250 parts of toluene.
The preparation method of the semiconductor composite material based on the black phosphorus alkene comprises the following steps: dissolving a film-forming substrate in an organic solvent, then sequentially adding a black phosphorus alkene-polyaniline compound and a cross-linking agent, fully and uniformly mixing, and finally heating to 180 ℃ to remove the solvent and pressurizing to obtain the semiconductor composite material.
The preparation method of the black phosphorus alkene-polyaniline compound comprises the steps of introducing nitrogen, controlling the temperature at 10 ℃, adding 5 parts of black phosphorus alkene, 0.5 part of sodium stearate, 4 parts of aniline subjected to reduced pressure distillation, 1 part of 2 mol/L hydrochloric acid and 62 parts of water into a reactor, stirring at a high speed to disperse uniformly, adding 14 parts of potassium dichromate, continuing to react for 9 hours at 10 ℃, filtering, and drying to obtain the black phosphorus alkene-polyaniline compound.
Comparative example 2: the black phosphorus in this example was replaced with graphene, and the graphene semiconductor composite material was prepared according to the same process, i.e., comparative example 2.
Example 3
A semiconductor composite material based on black phosphorus alkene comprises the following raw material components: 58 parts of polyvinylidene fluoride, 18 parts of black phosphorus alkene-polyaniline compound, 3 parts of bentonite, 1.5 parts of benzoyl peroxide and 240 parts of petroleum ether.
The preparation method of the semiconductor composite material based on the black phosphorus alkene comprises the following steps: dissolving a film-forming substrate in an organic solvent, then sequentially adding a black phosphorus alkene-polyaniline compound and a cross-linking agent, fully and uniformly mixing, and finally heating to 120 ℃ to remove the solvent and pressurize to obtain the semiconductor composite material.
The preparation method of the black phosphorus alkene-polyaniline compound comprises the steps of introducing nitrogen, controlling the temperature at 3 ℃, adding 5 parts of black phosphorus alkene, 0.1 part of sodium laurate, 11 parts of aniline subjected to reduced pressure distillation, 0.8 part of 1.3 mol/L hydrochloric acid and 55 parts of water into a reactor, stirring at a high speed to disperse uniformly, adding the mixture containing 20 parts of potassium iodate, continuing to react for 12 hours at 3 ℃, filtering, and drying to obtain the black phosphorus alkene-polyaniline compound.
Comparative example 3: the black phosphorus in this example was replaced with graphene, and the graphene semiconductor composite material was prepared according to the same process, i.e., comparative example 3.
The test data of the semiconductor composite materials in the examples and the comparative examples under the same conditions are shown in the following table, and it can be seen from the comparison of the data that the volume resistivity at 20 ℃ is similar to that of the comparative examples, but the strength and toughness are higher.
Claims (6)
1. The preparation method of the semiconductor composite material is characterized by comprising the following raw material components in parts by weight: 10-20 parts of a black phosphorus alkene-polyaniline compound, 50-60 parts of a film forming substrate, 0-15 parts of a filler, 1-5 parts of a cross-linking agent and 200-250 parts of an organic solvent;
the preparation method comprises the following steps: firstly, dissolving a film-forming substrate in an organic solvent, then sequentially adding a black phosphorus alkene-polyaniline compound and a cross-linking agent, fully and uniformly mixing, and finally heating to 120-180 ℃, removing the solvent and pressurizing to obtain the semiconductor composite material;
the preparation method of the black phosphorus alkene-polyaniline compound comprises the steps of controlling the temperature to be-2-10 ℃ under the condition of introducing nitrogen, adding 3-6 parts of black phosphorus alkene, 0.1-0.5 part of surfactant, 4-12 parts of aniline subjected to reduced pressure distillation, 0.2-2 parts of 0.5-2 mol/L hydrochloric acid and 50-70 parts of water into a reactor, stirring at a high speed to disperse uniformly, adding 6-20 parts of oxidant, continuing to react at-2-10 ℃ for 6-12 hours, filtering and drying to obtain the black phosphorus alkene-polyaniline compound.
2. The method according to claim 1, wherein the film-forming substrate is at least one of ethylene-vinyl acetate copolymer, polyvinylidene fluoride, polymethyl methacrylate, and polyvinyl chloride.
3. The method for producing a semiconductor composite material according to claim 1, characterized in that: the filler is at least one of kaolin, bentonite, talcum powder and mica powder.
4. The method for producing a semiconductor composite material according to claim 1, characterized in that: the cross-linking agent is at least one of dicumyl peroxide, benzoyl peroxide, 1, 4-di-tert-butylperoxyisopropyl benzene, tert-butyl peroxycarbonate, tert-butyl cumyl peroxide and cumyl peroxide.
5. The method for producing a semiconductor composite material according to claim 1, characterized in that: the organic solvent is at least one of petroleum ether, toluene, xylene, trimethylbenzene and D40 solvent.
6. The method for producing a semiconductor composite material according to claim 1, characterized in that: the surfactant is at least one of sodium dodecyl sulfate, sodium dodecyl benzene sulfonate, sodium didodecyl phenyl ether disulfonate, sodium stearate and sodium laurate; the oxidant is at least one of potassium persulfate, ammonium persulfate, potassium dichromate, potassium iodate, ferric trichloride and hydrogen peroxide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010266958.0A CN111393782A (en) | 2017-11-10 | 2017-11-10 | Preparation method of semiconductor composite material |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711102151.8A CN107778745B (en) | 2017-11-10 | 2017-11-10 | Semiconductor composite material based on black phosphorus alkene and preparation method and application thereof |
| CN202010266958.0A CN111393782A (en) | 2017-11-10 | 2017-11-10 | Preparation method of semiconductor composite material |
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| CN201711102151.8A Division CN107778745B (en) | 2017-11-10 | 2017-11-10 | Semiconductor composite material based on black phosphorus alkene and preparation method and application thereof |
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| CN202010266405.5A Withdrawn CN111253701A (en) | 2017-11-10 | 2017-11-10 | Preparation method and application of black phosphorus alkene-polyaniline compound |
| CN201711102151.8A Active CN107778745B (en) | 2017-11-10 | 2017-11-10 | Semiconductor composite material based on black phosphorus alkene and preparation method and application thereof |
| CN202010266958.0A Withdrawn CN111393782A (en) | 2017-11-10 | 2017-11-10 | Preparation method of semiconductor composite material |
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| CN201711102151.8A Active CN107778745B (en) | 2017-11-10 | 2017-11-10 | Semiconductor composite material based on black phosphorus alkene and preparation method and application thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111834526B (en) * | 2020-07-08 | 2022-06-21 | 华东理工大学 | Multifunctional electronic device of polyaniline modified black phosphorus nanosheet and preparation method and application thereof |
| CN113683889A (en) * | 2021-09-01 | 2021-11-23 | 深圳市动盈先进材料有限公司 | Semiconductor material for 5G signal transmission |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105655138B (en) * | 2016-03-31 | 2018-07-13 | 中南大学 | A kind of two-sided entering light dye-sensitized solar cells and preparation method thereof |
| CN106098399B (en) * | 2016-05-26 | 2018-06-12 | 北京石油化工学院 | Combination electrode, ultracapacitor and preparation method thereof |
| CN106432561A (en) * | 2016-10-10 | 2017-02-22 | 戚明海 | Method for preparing black phosphorus heteropolymer in situ |
| CN107011568B (en) * | 2017-04-19 | 2019-12-20 | 上海电气集团股份有限公司 | Semiconductor polymer with composite graphene/carbon black as conductive medium and preparation method thereof |
| CN107140612B (en) * | 2017-06-26 | 2019-05-28 | 北京石油化工学院 | A method of preparing phosphorus alkene-nitrogen-doped carbon composite material |
| CN107245144A (en) * | 2017-06-26 | 2017-10-13 | 北京石油化工学院 | A kind of preparation method of phosphorus alkene conductive polymer composite |
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2017
- 2017-11-10 CN CN202010266405.5A patent/CN111253701A/en not_active Withdrawn
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| CN111253701A (en) | 2020-06-09 |
| CN107778745A (en) | 2018-03-09 |
| CN107778745B (en) | 2020-07-28 |
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