CN111386252A - Preparation method of vanadium dioxide film - Google Patents
Preparation method of vanadium dioxide film Download PDFInfo
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- CN111386252A CN111386252A CN201980005205.XA CN201980005205A CN111386252A CN 111386252 A CN111386252 A CN 111386252A CN 201980005205 A CN201980005205 A CN 201980005205A CN 111386252 A CN111386252 A CN 111386252A
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/3411—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials
- C03C17/3417—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials all coatings being oxide coatings
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/20—Materials for coating a single layer on glass
- C03C2217/21—Oxides
- C03C2217/24—Doped oxides
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/10—Deposition methods
- C03C2218/15—Deposition methods from the vapour phase
- C03C2218/154—Deposition methods from the vapour phase by sputtering
- C03C2218/155—Deposition methods from the vapour phase by sputtering by reactive sputtering
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/10—Deposition methods
- C03C2218/15—Deposition methods from the vapour phase
- C03C2218/154—Deposition methods from the vapour phase by sputtering
- C03C2218/156—Deposition methods from the vapour phase by sputtering by magnetron sputtering
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/30—Aspects of methods for coating glass not covered above
- C03C2218/32—After-treatment
Abstract
A method for preparing vanadium dioxide film is disclosed. The preparation method comprises the following steps: providing a substrate; forming an intrinsic vanadium dioxide thin film with good phase change performance on one side of a substrate; forming an ultrathin heavily doped vanadium dioxide film on one side of the intrinsic vanadium dioxide film, which is far away from the substrate, so as to prepare a sample to be annealed; and annealing the sample to be annealed at a preset temperature for a preset time to obtain the composite vanadium dioxide film sample with the low phase transition temperature. According to the technical scheme provided by the embodiment of the application, the phase change temperature of the vanadium dioxide film is reduced, other phase change performances are hardly influenced, and the phase change temperature of the vanadium dioxide film can be adjusted by adjusting the annealing time, the film thickness of the heavily doped vanadium dioxide film, the doping concentration of the heavily doped vanadium dioxide film and the like; meanwhile, the preparation method provided by the embodiment of the application is simple in process and wide in application range.
Description
Technical Field
The embodiment of the application relates to the technical field of materials, for example to a preparation method of a vanadium dioxide thin film.
Background
Vanadium dioxide (VO)2) The material has semiconductor-metal phase change characteristics, is in a semiconductor state before phase change, and has high transmittance for infrared light; the phase-changed material is in a metal state and has high reflection characteristic to infrared light. The phase change characteristics of vanadium dioxide enable the vanadium dioxide to have important application prospects in the field of intelligent energy-saving windows. 98% of the total energy of solar radiation is concentrated in infrared and visible light bands, most of the energy is concentrated in the infrared band, and vanadium dioxide has sudden change of light transmittance and reflectivity of the infrared band when semiconductor-metal phase change occurs, so that the vanadium dioxide becomes the first choice of the intelligent window material. In a specific application scene, VO is generated when the temperature is high in summer2The intelligent window is in a high-temperature metal state, the infrared light transmittance of the intelligent window is very low, the infrared light can be inhibited from being incident indoors, and the purpose of reducing the room temperature is achieved; in contrast, when the external temperature is lower than VO2When the temperature is changed, infrared light can penetrate through the intelligent window with higher transmittance, so that the indoor temperature is increased. Therefore, the VO is plated on the window2Thin film glass, VO usable therefor2The phase change characteristic realizes the intelligent regulation of the indoor temperature, thereby realizing the purposes of being warm in winter and cool in summer.
Typically, the phase transition temperature of single crystal vanadium dioxide is 68 ℃, which is closest to room temperature, but is still high relative to human comfort temperatures for smart window applications. Earlier researches show that the phase transition temperature of vanadium dioxide can be effectively reduced by doping the vanadium dioxide, and common doped elements comprise tungsten (W), molybdenum (Mo) and the like. However, the doping element is used to reduce the phase transition temperature of vanadium dioxide, and at the same time, the problem of deterioration of phase transition performance such as reduction of visible light transmittance and reduction of infrared light modulation capability is brought, which becomes one of the bottlenecks in the research of vanadium dioxide-based smart windows.
Disclosure of Invention
The following is a summary of the subject matter described in detail herein. This summary is not intended to limit the scope of the claims.
The embodiment of the application provides a preparation method of a vanadium dioxide film, which can reduce the phase change temperature of vanadium dioxide and keep the phase change performance of vanadium dioxide almost unaffected; thereby being beneficial to realizing the practical application of the vanadium dioxide in the field of intelligent energy-saving windows.
The embodiment of the application provides a preparation method of a vanadium dioxide film, which comprises the following steps:
providing a substrate;
forming an intrinsic vanadium dioxide thin film on one side of the substrate; the intrinsic vanadium dioxide thin film has phase change performance;
forming a doped vanadium dioxide film on one side of the intrinsic vanadium dioxide film, which is far away from the substrate, so as to prepare a sample to be annealed;
and annealing the sample to be annealed at a preset temperature for a preset time.
In one embodiment, the forming of the intrinsic vanadium dioxide thin film on the substrate side includes: forming an intrinsic vanadium dioxide thin film on one side of the substrate by adopting a reactive sputtering process;
the forming of the doped vanadium dioxide film on the side of the intrinsic vanadium dioxide film away from the substrate comprises: and forming a doped vanadium dioxide film on the surface of one side, which is far away from the substrate, of the intrinsic vanadium dioxide film by adopting a reactive co-sputtering process.
In an embodiment, before forming the intrinsic vanadium dioxide thin film on one side of the substrate by using a reactive sputtering process, the method further includes:
and carrying out pre-sputtering on the vanadium target material to remove pollutants on the surface of the vanadium target material.
In one embodiment, the thickness A of the doped vanadium dioxide thin film is in a range of 1nm to 20 nm.
In one embodiment, the value range of the doping proportion B of the doped vanadium dioxide thin film is that B is more than or equal to 8%; the doping proportion B is the mole percent of the doping elements in the doping elements and the vanadium dioxide.
In one embodiment, the doping element is a metal element.
In one embodiment, the preset temperature ranges from 200 ℃ to 400 ℃; the value range of the preset time is 15-60 min.
In one embodiment, the sample to be annealed is annealed in a preset vacuum environment;
the vacuum degree of the preset vacuum environment is 3 × 10-3Pa～8×10-4Pa。
In one embodiment, the atmosphere of the predetermined vacuum environment includes an argon atmosphere, or an oxygen atmosphere, or an atmosphere directly evacuated without any gas.
The preparation method of the vanadium dioxide film provided by the embodiment of the application comprises the following steps: providing a substrate; forming an intrinsic vanadium dioxide thin film with good phase change performance on one side of a substrate; forming an ultrathin heavily doped vanadium dioxide film on one side of the intrinsic vanadium dioxide film, which is far away from the substrate, so as to prepare a sample to be annealed; annealing the sample to be annealed at a preset temperature for a preset time to obtain a composite vanadium dioxide film sample with a low phase transition temperature; the phase change temperature of the vanadium dioxide film is reduced, other phase change performances are hardly influenced, and the phase change temperature of the vanadium dioxide film can be adjusted by adjusting the annealing time, the film thickness of the heavily doped vanadium dioxide film, the doping concentration of the heavily doped vanadium dioxide film and the like; meanwhile, the preparation method provided by the embodiment of the application is simple in process and wide in application range.
Other aspects will become apparent upon reading and understanding the detailed description and the accompanying drawings.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, a brief description will be given below of the drawings required for the embodiments or the technical solutions in the prior art, and it is obvious that the drawings in the following description are some embodiments of the present application, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
FIG. 1 is a schematic flow chart of a method for preparing a vanadium dioxide thin film according to an embodiment of the present disclosure;
FIG. 2 is a schematic structural diagram of a sample to be annealed according to an embodiment of the present disclosure;
FIG. 3 is a schematic flow chart of another method for preparing a vanadium dioxide thin film according to the embodiment of the present application;
FIG. 4 is a comparison of optical thermal hysteresis loops of a vanadium dioxide film and an intrinsic vanadium dioxide sample provided in an embodiment of the present application;
FIG. 5 is a comparison of the high and low temperature transmission spectra of a vanadium dioxide thin film and an intrinsic vanadium dioxide sample provided in the examples of the present application.
Detailed Description
The present application will be described in further detail with reference to the following drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the application and are not limiting of the application. It should be further noted that, for the convenience of description, only some of the structures related to the present application are shown in the drawings, not all of the structures.
The core idea of the embodiment of the application is as follows: provide a method for reducing VO2The phase change temperature of the film is kept and the phase change performance of the film is hardly influenced, and the method is a simpler process method. The preparation method provided by the embodiment of the application mainly comprises the following steps: firstly, coating a layer of VO with good phase change performance on a substrate2Thin film intrinsic layer (i.e. intrinsic vanadium dioxide thin film) then at VO2Plating a layer of ultrathin VO on the thin film intrinsic layer2M film heavily doped layer (doped vanadium dioxide film), wherein M represents doped element, finally annealing the sample to be annealed at a certain (preset) temperature for a certain (preset) time to obtain the required VO with low phase transition temperature2Film samples. Wherein the doping element may be of the same kind asAccording to the actual requirement, the method can be any one known by those skilled in the art, and the embodiment of the present application is not limited to this.
The technical effects of the embodiments of the present application include, but are not limited to:
1) composite VO obtained by the preparation method2Film vs VO2The phase transition temperature of the thin film intrinsic layer is greatly reduced.
2) Composite VO2The phase transition temperature of the thin film can be adjusted by changing the annealing time, the annealing temperature, the annealing atmosphere, the thickness of the heavily doped layer, and the like. Illustratively, extending the annealing time and raising the annealing temperature facilitates the reduction of VO2Phase transition temperature of the film.
3) Composite VO2VO while the phase transition temperature of the film is reduced2Other optical phase change performance and electrical phase change performance of the film relative to VO2The intrinsic layer of the film remains substantially unchanged.
4) Composite VO2In the preparation of the film, VO2Thin film intrinsic layer and VO2The formation process of the M thin film heavily doped layer can be flexibly selected according to actual requirements, which is not limited in the embodiment of the present application.
5) Compared with the traditional method of preparing the composite VO with low phase transition temperature by adopting a doping method2For the film, the method has simple process and greatly reduces the production cost.
The preparation method of the vanadium dioxide thin film provided by the embodiment of the present application and the vanadium dioxide thin film prepared thereby are exemplified below with reference to the accompanying fig. 1 to 5.
Referring to fig. 1, the preparation method of the vanadium dioxide thin film comprises the following steps:
and S110, providing a substrate.
Wherein, the substrate plays a role in supporting and protecting a film formed subsequently.
For example, the substrate may be a glass substrate, a silicon substrate, or other types of substrates known to those skilled in the art, and the embodiments of the present application are not limited thereto.
Illustratively, this step involves providing a substrate of suitable size and thickness (suitable for the equipment used in the subsequent steps) and requires a cleaning and drying process prior to forming the thin film.
And S120, forming an intrinsic vanadium dioxide thin film on one side of the substrate.
Wherein, the intrinsic vanadium dioxide film has phase change performance.
For example, the formation of the intrinsic vanadium dioxide thin film may include sputtering, evaporation, or other processes known to those skilled in the art, which is not limited in the embodiments of the present application.
And S130, forming a doped vanadium dioxide film on one side of the intrinsic vanadium dioxide film, which is far away from the substrate, and preparing a sample to be annealed.
The doped vanadium dioxide thin film can be understood as a thin film formed by doping with a doping element on the basis of an intrinsic vanadium dioxide thin film.
For example, the doped vanadium dioxide thin film may be formed by sputtering, evaporation, or other processes known to those skilled in the art, and the embodiments of the present application are not limited thereto.
Illustratively, fig. 2 is a schematic diagram of the structure of a sample to be annealed. Referring to fig. 2, the sample to be annealed includes a substrate 300, and an intrinsic vanadium dioxide thin film 310 and a doped vanadium dioxide thin film 320 sequentially stacked on one side of the substrate 300.
It should be noted that the thicknesses of the intrinsic vanadium dioxide film 310 and the doped vanadium dioxide film 320 can be set according to the actual requirements of the preparation method of the vanadium dioxide film, and the embodiment of the present application does not limit this.
And S140, annealing the sample to be annealed at a preset temperature for a preset time.
Wherein the annealing step enables the doping elements in the doped vanadium dioxide thin film to diffuse into the intrinsic vanadium dioxide thin film. The degree of diffusion of the doping element is related to the preset temperature and the preset time: the higher the annealing temperature and the longer the annealing time before the doping element is not sufficiently diffused, the more advantageous the diffusion of the doping element is.
Wherein, the diffusion degree of the doping element can influence the final composite vanadium dioxide (VO)2) Film(s)The phase transition temperature of (a). Illustratively, the more uniform the diffusion, the more beneficial the reduction of composite VO2Phase transition temperature of the film.
Specific temperatures and times are detailed below.
On the basis of fig. 1, S120 and S130 may be further refined. For example, referring to fig. 3, the method for preparing the vanadium dioxide thin film may include:
and S210, providing a substrate.
And S220, forming an intrinsic vanadium dioxide thin film on one side of the substrate by adopting a reactive sputtering process.
For example, the intrinsic vanadium dioxide thin film can be prepared by using a vanadium target material by using a direct current pulse reaction magnetron sputtering technology.
And S230, forming a doped vanadium dioxide film on the surface of one side, away from the substrate, of the intrinsic vanadium dioxide film by adopting a reactive co-sputtering process, and preparing a sample to be annealed.
Illustratively, a vanadium dioxide doped thin film can be formed by using a vanadium target and an element-doped target by a magnetron reactive co-sputtering technique.
S240, annealing the sample to be annealed at a preset temperature for a preset time.
To this end, a composite VO is formed2A film.
It should be noted that the preparation process of the intrinsic vanadium dioxide thin film is not limited to the reactive sputtering process, and in other embodiments, a physical vapor deposition method, a chemical vapor deposition method, or a solution method, which can form the intrinsic vanadium dioxide thin film, can be used as the process for preparing the intrinsic vanadium dioxide thin film under the core concept of the present application.
On the basis of fig. 3 (fig. 1), the preparation method may be further refined, and before S220(S120), the method may further include: and carrying out pre-sputtering on the vanadium target material to remove pollutants on the surface of the vanadium target material.
Therefore, the reaction sputtering can be ensured to be carried out smoothly, and impurities can be prevented from being doped in the intrinsic vanadium dioxide film, so that the intrinsic vanadium dioxide film is ensured to have good phase change performance.
In the preparation method provided by the embodiment, the value range of the thickness A of the doped vanadium dioxide thin film is that A is more than or equal to 1nm and less than or equal to 20 nm.
With the arrangement, the proper thickness of the doped vanadium dioxide can be ensured, so as to ensure the doping amount of the doping element to ensure that the finally formed composite VO2The film has a lower phase transition temperature and a better phase transition characteristic.
In the preparation method provided by the above embodiment, the vanadium dioxide doped thin film is a thin film formed by vanadium dioxide and a doping element; the value range of the doping proportion B of the doping elements is that B is more than or equal to 8 percent; the doping proportion B is the mole percentage of the doping elements in the doping elements and the vanadium dioxide.
So arranged, the doping proportion of the doped vanadium dioxide can ensure the finally formed composite VO2The film has a lower phase transition temperature and a better phase transition characteristic.
In the preparation method provided in the above embodiment, the doping element is a metal element.
By adopting the arrangement, the vanadium dioxide doped thin film can be formed by a reactive co-sputtering method; the reactive sputtering method for forming the intrinsic vanadium dioxide film can be carried out by adopting the same equipment, thereby being beneficial to saving the time for switching the working procedures and simultaneously being beneficial to reducing the equipment cost.
In the preparation method provided by the embodiment, the value range of the preset temperature is 200-400 ℃; the value range of the preset time is 15 min-60 min.
With such an arrangement, the diffusion degree of the doping element can be made appropriate, thereby ensuring the finally formed composite VO2The film has a lower phase transition temperature and a better phase transition characteristic.
In the preparation method provided in the above embodiment, the sample to be annealed is annealed in the preset vacuum environment, and the vacuum degree of the preset vacuum environment is 3 × 10-3Pa～8×10-4Pa。
So set up, can avoid the influence of other impurity to be favorable to ensureing the compound VO that finally forms2The film has a lower phase transition temperature and a better phase transition characteristic.
In the preparation method provided in the above embodiment, the atmosphere of the preset vacuum environment includes an argon atmosphere, or an oxygen atmosphere, or an atmosphere directly evacuated without filling any gas.
According to the arrangement, the environmental atmosphere can be diversified, the method can be flexibly selected according to actual preparation conditions and the requirements of the preparation method of the vanadium dioxide film, and the preparation flexibility is improved.
The method for preparing the vanadium dioxide thin film and the characteristics of the vanadium dioxide thin film prepared by the method are described in the following by combining an example.
Referring to fig. 2, in this example, the substrate 300 is ultrasonically cleaned K9 glass. VO (vacuum vapor volume)2The film intrinsic layer 310 (i.e. the intrinsic vanadium dioxide film 310) is prepared by adopting a direct current pulse reaction magnetron sputtering technology, and metal vanadium (V) is taken as a target material; VO (vacuum vapor volume)2The background vacuum for the thin film intrinsic layer 310 preparation was 1.0 × 10-3Pa, Ar as sputtering gas, O2As a reaction gas. VO (vacuum vapor volume)2Before the deposition of the film intrinsic layer 310, only Ar is introduced to carry out pre-sputtering on the V target for 10 minutes so as to remove pollutants on the surface of the V target; then Ar and O are introduced2Ar flow rate of 40sccm, O2The flow rate of the deposition solution is 1.5sccm, and the deposition is carried out for 2 hours under the pressure of a deposition chamber of 0.6Pa and the substrate temperature of 400 ℃ to prepare VO with excellent phase change performance2A thin film intrinsic layer 310. Then, by utilizing a magnetron reaction co-sputtering technology, respectively taking metal V and metal chromium (Cr) as targets, and depositing the VO2VO deposition on thin film intrinsic layer 3102A heavily doped layer 320 of Cr film (i.e., doped vanadium dioxide film 320). Wherein, VO2Background vacuum of 1 × 10 in the preparation of heavily doped layer 320 of Cr film-3Pa, Ar as sputtering gas, O2As a reaction gas, the flow rate of Ar was 40sccm and O2The flow rate of the V target and the Cr target is 1.5sccm, the pressure of the deposition chamber is 0.6Pa, the deposition temperature is normal temperature (i.e., the substrate 300 is not heated), the sputtering power of the V target and the Cr target is 10W, the sputtering time is 15 seconds(s), thus forming a sample to be annealed, and finally, the obtained sample to be annealed is heated to 300 ℃ and the vacuum degree of 5 × 10-3In a high vacuum environment of PaAnnealing for 30 minutes (min) to prepare composite VO2A film.
Respectively to intrinsic VO2Thin film (i.e., vanadium dioxide thin film sample) and composite VO prepared according to the examples described above in this application2The optical thermal hysteresis loop and the high and low temperature transmission spectrum of the film were measured, and the results are shown in fig. 4 and 5, respectively.
As can be seen from fig. 4, the composite VO prepared according to the examples of the present application2The ratio of the phase transition temperature (mean value of the temperature-rising phase transition temperature and the temperature-lowering phase transition temperature, the same applies below) of the thin film to the intrinsic VO2The phase transition temperature of the film is reduced by about 25 ℃, and the effect is obvious.
As can be seen from FIG. 5, intrinsic VO2Thin film and composite VO2The high and low temperature transmission spectrums of the thin films are almost coincident, and the maximum difference of the transmittance is less than 5 percent, which shows that the composite VO prepared by the example of the application2Phase change performance of the film relative to intrinsic VO2The phase change performance of the film is almost unchanged.
The composite vanadium dioxide film sample obtained by the preparation method of the vanadium dioxide film provided by the embodiment of the application has almost no influence on other phase change performances while reducing the phase change temperature of the vanadium dioxide film, and the phase change temperature of the vanadium dioxide film can be adjusted by adjusting the annealing time, the film thickness of the heavily doped vanadium dioxide film and the like; meanwhile, the preparation method provided by the embodiment of the application is simple in process and wide in application range.
It is to be noted that the foregoing is only illustrative of the preferred embodiments of the present application and the technical principles employed. It will be understood by those skilled in the art that the present application is not limited to the particular embodiments described herein, but is capable of various obvious changes, rearrangements and substitutions as will now become apparent to those skilled in the art without departing from the scope of the application. Therefore, although the present application has been described in more detail with reference to the above embodiments, the present application is not limited to the above embodiments, and may include other equivalent embodiments without departing from the spirit of the present application, and the scope of the present application is determined by the scope of the appended claims.
Claims (9)
1. A preparation method of a vanadium dioxide thin film comprises the following steps:
providing a substrate;
forming an intrinsic vanadium dioxide thin film on one side of the substrate; the intrinsic vanadium dioxide thin film has phase change performance;
forming a doped vanadium dioxide film on one side of the intrinsic vanadium dioxide film, which is far away from the substrate, so as to prepare a sample to be annealed;
and annealing the sample to be annealed at a preset temperature for a preset time.
2. The method for preparing a vanadium dioxide thin film according to claim 1, wherein:
the forming of the intrinsic vanadium dioxide thin film on one side of the substrate comprises: forming an intrinsic vanadium dioxide thin film on one side of the substrate by adopting a reactive sputtering process;
the forming of the doped vanadium dioxide film on the side of the intrinsic vanadium dioxide film away from the substrate comprises: and forming a doped vanadium dioxide film on the surface of one side, which is far away from the substrate, of the intrinsic vanadium dioxide film by adopting a reactive co-sputtering process.
3. The method for preparing vanadium dioxide thin film according to claim 2, wherein the forming of the intrinsic vanadium dioxide thin film on the substrate side by the reactive sputtering process further comprises:
and carrying out pre-sputtering on the vanadium target material to remove pollutants on the surface of the vanadium target material.
4. The preparation method of the vanadium dioxide thin film according to claim 1, wherein the thickness A of the doped vanadium dioxide thin film is in a range of 1nm to 20 nm.
5. The preparation method of the vanadium dioxide thin film according to claim 1, wherein the doping proportion B of the doped vanadium dioxide thin film is in a value range of B being more than or equal to 8%; the doping proportion B is the mol percentage of the doping elements in the doping elements and the vanadium dioxide.
6. The method of claim 5, wherein the doping element is a metal element.
7. The preparation method of the vanadium dioxide thin film according to claim 1, wherein the preset temperature is in a range of 200 ℃ to 400 ℃; the value range of the preset time is 15-60 min.
8. The preparation method of the vanadium dioxide thin film according to claim 7, wherein the sample to be annealed is annealed in a preset vacuum environment;
the vacuum degree of the preset vacuum environment is 3 × 10-3Pa～8×10-4Pa。
9. The method for preparing a vanadium dioxide thin film according to claim 8, wherein the atmosphere of the predetermined vacuum environment comprises an argon atmosphere, an oxygen atmosphere, or an atmosphere directly evacuated without any gas.
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