CN111384197A - Defect-state graphene/semiconductor heterojunction photoelectric detector - Google Patents
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- 238000006722 reduction reaction Methods 0.000 claims description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 5
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- 229910052732 germanium Inorganic materials 0.000 claims description 3
- YBNMDCCMCLUHBL-UHFFFAOYSA-N (2,5-dioxopyrrolidin-1-yl) 4-pyren-1-ylbutanoate Chemical compound C=1C=C(C2=C34)C=CC3=CC=CC4=CC=C2C=1CCCC(=O)ON1C(=O)CCC1=O YBNMDCCMCLUHBL-UHFFFAOYSA-N 0.000 claims description 2
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- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 2
- -1 HgSe Inorganic materials 0.000 claims description 2
- 229910004262 HgTe Inorganic materials 0.000 claims description 2
- 229910000673 Indium arsenide Inorganic materials 0.000 claims description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims description 2
- 229910002665 PbTe Inorganic materials 0.000 claims description 2
- 229910007709 ZnTe Inorganic materials 0.000 claims description 2
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 claims description 2
- 239000003638 chemical reducing agent Substances 0.000 claims description 2
- 229940071870 hydroiodic acid Drugs 0.000 claims description 2
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- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
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Abstract
The invention discloses a defect state graphene/semiconductor heterojunction photoelectric detector which has a two-layer structure, wherein one layer is a semiconductor layer, the other layer is a defect state graphene layer, and the defect state graphene layer is attached to the semiconductor layer; the thickness of the defect state graphene layer is 10-100nm, and the defect state graphene layer contains defect state sp3/sp2The carbon content ratio is 1-40%. According to the invention, the film is prepared by adopting a suction filtration method, so that the uniformity of the film and the stability of a device are ensured; preparing a defective graphene film by controlling a sintering process,and a defect state is introduced into the heterojunction, so that electron scattering to phonons is increased, a thermal effect is caused, and the photoresponse is further improved. Compared with a non-defect-state graphene/semiconductor heterojunction photoelectric detector, the defect state is introduced, and the external quantum efficiency magnitude is improved.
Description
Technical Field
The invention belongs to the technical field of photoelectric detectors, and particularly relates to a defect-state graphene/semiconductor heterojunction photoelectric detector.
Background
With the development of the technology, the photoelectric detection range is widened from visible light to ultraviolet, infrared and X rays, even terahertz wave bands, and the photoelectric detection device plays a vital role in national economy and even national defense and military. However, in the development process of the observation photoelectric detector, the search for the high-response, room-temperature wide-band photoelectric detector is still an important research direction. The defect state graphene/semiconductor heterojunction photoelectric detector is one of the defects, a heterojunction is constructed by applying different work functions of graphene (4.5eV) and a semiconductor, when light irradiates the heterojunction, the defect state graphene absorbs the light, photon energy jumps to generate a photon-generated carrier, and the photon-generated carrier is transmitted to a heterojunction interface under the action of an external bias voltage to realize photoelectric conversion.
However, the conventional graphene/semiconductor heterojunction photoelectric detector uses single-layer graphene or few-layer mechanically-exfoliated graphene as a metal material, and has the following problems that firstly, the graphene is low in thickness and too low in light absorption rate; secondly, the area of the few-layer graphene is too small, so that the few-layer graphene is not suitable for mass preparation.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provides a defect-state graphene/semiconductor heterojunction photoelectric detector. By designing the nano-scale graphene film, the light absorption is increased, and the various problems of the conventional graphene are solved. And sintering to obtain nano-scale graphene films with different defect state contents, and introducing defect states to increase electron scattering to phonons, so as to cause a thermal effect and improve photoresponse.
The purpose of the invention is realized by the following technical scheme: a defect state graphene/semiconductor heterojunction photoelectric detector is provided, and the photoelectric detector has a two-layer structure, wherein one layer is a semiconductor layer, the other layer is a defect state graphene layer, and the defect state graphene layer is attached to the semiconductor layer; the thickness of the defective graphene layer is 10-100nm, soThe defect state sp is contained in the defect state graphene layer3/sp2The carbon content ratio is 1-40%. The defect-state graphene layer is prepared by the following method:
(1) carrying out suction filtration on an AAO substrate to obtain a graphene oxide film with a nano thickness, wherein the graphene oxide film is loaded on the AAO substrate;
(2) chemically reducing the AAO substrate loaded with the graphene oxide film at 60-120 ℃ for 6-12h to obtain the AAO substrate loaded with the reduced graphene oxide film;
(3) peeling the AAO substrate carrying the reduced graphene oxide film through camphor at the temperature of 120-200 ℃, and removing the camphor at the temperature of 60 ℃; obtaining a reduced graphene oxide film;
(4) and (4) sintering the reduced graphene oxide film obtained in the step (3) at the temperature of 1600-2000 ℃ for 1min-8h to prepare the defect-state nano-thickness graphene film.
Further, the chemical reduction method in step 2 is hydroiodic acid reduction.
Further, the semiconductor may be Si, Ge, SiC, AlN, AlP, AlAs, AlSb, GaN, GaP, GaAs, GaSb, InN, InP, InAs, InSb, ZnO, ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, HgSe, HgTe, PbS, PbSe, PbTe, or the like.
The invention has the beneficial effects that: according to the invention, the graphene oxide film is prepared by a suction filtration method, so that the uniformity of the graphene oxide film and the stability of a device are ensured; by controlling the sintering process, the defect state graphene film is prepared, the defect state is introduced into the heterojunction, electrons are scattered to phonons, the heat effect is caused, and the photoresponse is further improved. Compared with a non-defect-state graphene/semiconductor heterojunction photoelectric detector, the defect state is introduced, and the external quantum efficiency is improved in magnitude. In addition, compared with few-layer graphene, the thin film prepared by the method is large in size and higher in operability.
Drawings
Fig. 1 is a current-voltage curve of a graphene/silicon heterojunction photodetector prepared in example 1 for 1600-1 min (defect 40%).
Fig. 2 is a current-voltage curve of a graphene/silicon heterojunction photodetector prepared in example 2 for 1600-30 min (defect 20%).
Fig. 3 is a current-voltage curve of a graphene/silicon heterojunction photodetector manufactured in example 3 for 1600-8 h (defect 10%).
FIG. 4 is a graph of current-voltage curves for the 2800-2h (defect free) graphene/silicon heterojunction photodetector made in example 4.
Detailed Description
The objects and effects of the present invention will become more apparent by describing the contents of the present invention in further detail with reference to the accompanying drawings. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Example 1
(1) Diluting a graphene oxide solution, and performing suction filtration on an AAO substrate to obtain a graphene oxide film, wherein the graphene oxide film is loaded on the AAO substrate;
(2) carrying out hydriodic acid reduction on the AAO substrate loaded with the graphene oxide film at 60 ℃ for 12h to obtain the AAO substrate loaded with the reduced graphene oxide film;
(3) peeling the AAO substrate supporting the reduced graphene oxide film through camphor at 120 ℃ and removing the camphor at 60 ℃; obtaining a reduced graphene oxide film;
(4) and (4) sintering the reduced graphene oxide film obtained in the step (3) at 1600 ℃ for 1min to prepare the defect-state graphene film with the thickness of 40 nm.
XPS detects and calculates that the defect state graphene film contains defect state sp3/sp2The carbon content ratio was 40%.
Attaching the defect-state graphene film to a silicon wafer to prepare a photoelectric device, measuring a current-voltage curve at a wavelength of 4um as shown in fig. 1, calculating the responsivity and the external quantum efficiency according to the measurement result to obtain the responsivity of 7.41 × 10 when the laser power of 4um is 71mw-5A/W, external quantum efficiency of 2.30 × 10-5。
Example 2:
(1) diluting a graphene oxide solution, and performing suction filtration on an AAO substrate to obtain a graphene oxide film, wherein the graphene oxide film is loaded on the AAO substrate;
(2) carrying out hydriodic acid reduction on the AAO substrate loaded with the graphene oxide film at 120 ℃ for 8h to obtain the AAO substrate loaded with the reduced graphene oxide film;
(3) peeling the AAO substrate supporting the reduced graphene oxide film through camphor at 200 ℃ and removing the camphor at 60 ℃; obtaining a reduced graphene oxide film;
(4) and (4) sintering the reduced graphene oxide film obtained in the step (3) at 1600 ℃ for 30min to prepare the defect-state graphene film with the thickness of 40 nm.
XPS detection is carried out to calculate that the defect state graphene film contains defect state sp3/sp2The carbon content ratio was 20%.
And (3) attaching the defect state graphene film and a silicon wafer to prepare a photoelectric device, measuring a current-voltage curve at the wavelength of 4um, and calculating the responsivity and the external quantum efficiency according to the measurement result as shown in figure 2, wherein the responsivity is 5.01 × 10 when the laser power of 4um is 71mw-5A/W, external quantum efficiency of 1.57 × 10-6。
Example 3:
(1) diluting a graphene oxide solution, and performing suction filtration on an AAO substrate to obtain a graphene oxide film, wherein the graphene oxide film is loaded on the AAO substrate;
(2) chemically reducing the AAO substrate loaded with the graphene oxide film at 120 ℃ for 12h to obtain the AAO substrate loaded with the reduced graphene oxide film;
(3) peeling the AAO substrate supporting the reduced graphene oxide film through camphor at 200 ℃ and removing the camphor at 60 ℃; obtaining a reduced graphene oxide film;
(4) and (4) sintering the reduced graphene oxide film obtained in the step (3) at 1600 ℃ for 8h to prepare the defect-state graphene film with the thickness of 40 nm.
XPS detection is carried out to calculate that the defect state graphene film contains defect state sp3/sp2The carbon content ratio was 10%.
The defect state graphene film is attached to a silicon wafer to prepare the photoelectric deviceAnd measuring the current-voltage curve at 4um wavelength, as shown in FIG. 3, calculating the responsivity and external quantum efficiency according to the measurement result to obtain the responsivity of 7.79 × 10 when the laser power of 4um is 71mw-5A/W, external quantum efficiency of 2.42 × 10-5。
Comparative example
(1) Diluting a graphene oxide solution, and performing suction filtration on an AAO substrate to obtain a graphene oxide film, wherein the graphene oxide film is loaded on the AAO substrate;
(2) chemically reducing the AAO substrate loaded with the graphene oxide film at 120 ℃ for 12h to obtain the AAO substrate loaded with the reduced graphene oxide film;
(3) peeling the AAO substrate supporting the reduced graphene oxide film through camphor at 200 ℃ and removing the camphor at 60 ℃; obtaining a reduced graphene oxide film;
(4) and (4) sintering the reduced graphene oxide film obtained in the step (3) at 2800 ℃ for 2h to prepare the 40nm graphene film.
XPS detection is carried out, and defect sp state contained in the graphene film is calculated3/sp2The carbon content ratio was 0.
And (3) attaching the defect state graphene film and a silicon wafer to prepare a photoelectric device, measuring a current-voltage curve at the wavelength of 4um, and calculating the responsivity and the external quantum efficiency according to the measurement result as shown in figure 4, wherein the responsivity is 2.60 × 10 when the laser power of 4um is 71mw-6A/W, external quantum efficiency 8.06 × 10-7。
The current-voltage curve of the defect-state graphene/silicon heterojunction photodetector determined in the examples 1 to 3 and the current-voltage curve of the comparative defect-free graphene/silicon heterojunction photodetector are calculated and compared with corresponding external quantum efficiencies, and the results are as follows: table 1 shows that as the laser power decreases, the external quantum efficiency of the graphene/silicon heterojunction photodetector decreases; for the laser power under the same power, the external quantum efficiency of the defective graphene/silicon heterojunction photoelectric detector is higher than that of the defect-free graphene/silicon heterojunction photoelectric detector. Therefore, the external quantum efficiency of the photoelectric device prepared by taking the defect-state graphene film as the two-dimensional material is higher than that of the photoelectric device prepared by taking the defect-state graphene film as the two-dimensional material.
TABLE 1 external Quantum efficiency of optoelectronic devices at different powers (different defect states graphene films)
Example 4
(1) Diluting a graphene oxide solution, and performing suction filtration on an AAO substrate to obtain a graphene oxide film, wherein the graphene oxide film is loaded on the AAO substrate;
(2) chemically reducing the AAO substrate loaded with the graphene oxide film at 120 ℃ for 10 hours to obtain the AAO substrate loaded with the reduced graphene oxide film;
(3) peeling the AAO substrate supporting the reduced graphene oxide film through camphor at 200 ℃ and removing the camphor at 60 ℃; obtaining a reduced graphene oxide film;
(4) and (4) sintering the reduced graphene oxide film obtained in the step (3) at 2000 ℃ for 8h to prepare the 10nm defect state graphene film.
XPS detection is carried out, and defect sp state contained in the defect state graphene film is calculated3/sp2The carbon content ratio was 1%.
And attaching the defect state graphene film and a germanium sheet to prepare a photoelectric device, measuring a current-voltage curve under the wavelength of 4um, and calculating the responsivity and the external quantum efficiency according to the measurement result to obtain the responsivity of 0.0037A/W when the laser power of 4um is 5 mw.
Example 5
(1) Diluting a graphene oxide solution, and performing suction filtration on an AAO substrate to obtain a graphene oxide film, wherein the graphene oxide film is loaded on the AAO substrate;
(2) chemically reducing the AAO substrate loaded with the graphene oxide film at 120 ℃ for 6 hours to obtain the AAO substrate loaded with the reduced graphene oxide film;
(3) peeling the AAO substrate supporting the reduced graphene oxide film through camphor at 200 ℃ and removing the camphor at 60 ℃; obtaining a reduced graphene oxide film;
(4) and (4) sintering the reduced graphene oxide film obtained in the step (3) at 1600 ℃ for 8h to prepare the 100nm defect state graphene film.
XPS detection is carried out, and defect sp state contained in the defect state graphene film is calculated3/sp2The carbon content ratio was 10%.
And (3) attaching the defect state graphene film and zinc oxide to prepare a photoelectric device, measuring a current-voltage curve under the wavelength of 4um, and calculating the responsivity and the external quantum efficiency according to the measurement result to obtain the responsivity of 0.00499A/W when the laser power of 4um is 20 mw.
Claims (3)
1. A defect state graphene/semiconductor heterojunction photoelectric detector is characterized in that the photoelectric detector has a two-layer structure, one layer is a semiconductor layer, the other layer is a defect state graphene layer, and the defect state graphene layer is attached to the semiconductor layer; the thickness of the defect state graphene layer is 10-100nm, and the defect state graphene layer contains defect state sp3/sp2The carbon content ratio is 1-40%. The defect-state graphene layer is prepared by the following method:
(1) carrying out suction filtration on an AAO substrate to obtain a graphene oxide film with a nano thickness, wherein the graphene oxide film is loaded on the AAO substrate;
(2) chemically reducing the AAO substrate loaded with the graphene oxide film at 60-120 ℃ for 6-12h to obtain the AAO substrate loaded with the reduced graphene oxide film;
(3) peeling the AAO substrate carrying the reduced graphene oxide film through camphor at the temperature of 120-200 ℃, and removing the camphor at the temperature of 60 ℃; obtaining a reduced graphene oxide film;
(4) and (4) sintering the reduced graphene oxide film obtained in the step (3) at the temperature of 1600-2000 ℃ for 1min-8h to prepare the defect-state nano-thickness graphene film.
2. The defect-state graphene/semiconductor heterojunction photodetector of claim 1, wherein the chemical reduction method in step 2 is hydroiodic acid reduction.
3. The graphene/semiconductor heterojunction photodetector of claim 1, wherein said semiconductor can be Si, Ge, SiC, AlN, AlP, AlAs, AlSb, GaN, GaP, GaAs, GaSb, InN, InP, InAs, InSb, ZnO, ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, HgSe, HgTe, PbS, PbSe, PbTe, etc.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106517155A (en) * | 2016-10-10 | 2017-03-22 | 福州博力达机电有限公司 | Environment friendly method of preparing graphene |
| US20170084698A1 (en) * | 2015-09-20 | 2017-03-23 | National Tsing Hua University | Graphene-based valley filter and method for operating the same |
| CN108470794A (en) * | 2018-02-12 | 2018-08-31 | 杭州高烯科技有限公司 | A kind of graphene photodetector |
| CN110803743A (en) * | 2019-11-15 | 2020-02-18 | 中国地质大学（北京） | Preparation method of defect-state titanium oxide-aluminum oxide-graphene ceramic electrode |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20170084698A1 (en) * | 2015-09-20 | 2017-03-23 | National Tsing Hua University | Graphene-based valley filter and method for operating the same |
| CN106517155A (en) * | 2016-10-10 | 2017-03-22 | 福州博力达机电有限公司 | Environment friendly method of preparing graphene |
| CN108470794A (en) * | 2018-02-12 | 2018-08-31 | 杭州高烯科技有限公司 | A kind of graphene photodetector |
| CN110803743A (en) * | 2019-11-15 | 2020-02-18 | 中国地质大学（北京） | Preparation method of defect-state titanium oxide-aluminum oxide-graphene ceramic electrode |
Non-Patent Citations (2)
| Title |
|---|
| 乔芳建: "Mie散射增强的新型石墨烯光电探测器研究及Mie散射应用拓展", 《中国优秀硕士学位论文全文数据库 信息科技辑》 * |
| 樊姗等: "《石墨烯材料的基础及其在能源领域的应用（第一版）》", 28 February 2019 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114583003A (en) * | 2022-04-29 | 2022-06-03 | 浙江大学 | Vertical photoelectric detector based on silicon/graphene nano-film/germanium and preparation method |
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