CN111378448A

CN111378448A - Post-processing method of quantum dots

Info

Publication number: CN111378448A
Application number: CN201811611010.3A
Authority: CN
Inventors: 程陆玲; 杨一行
Original assignee: TCL Research America Inc
Current assignee: TCL Corp; TCL Research America Inc
Priority date: 2018-12-27
Filing date: 2018-12-27
Publication date: 2020-07-07
Anticipated expiration: 2038-12-27
Also published as: CN111378448B

Abstract

The invention provides a post-processing method of quantum dots, which comprises the following steps: providing an initial quantum dot solution; mixing and heating the initial quantum dot solution and a first compound or a first compound combination for the first time to obtain a first quantum dot solution; mixing and heating the first quantum dot solution and a second compound or a second compound combination in a second order to obtain a second quantum dot solution; mixing and heating the second quantum dot solution and the second compound or the second compound combination in a third sequence to obtain a third quantum dot solution, wherein the mixing and heating processes in the three sequences comprise an A sequence for mixing and heating the quantum dot solution in the sequence with organic amine or organic amine and organic phosphine, and a B sequence for mixing and heating the quantum dot solution in the sequence with organic carboxylic acid or organic carboxylic acid and organic phosphine; and the B order precedes the a order.

Description

Post-processing method of quantum dots

Technical Field

The invention belongs to the technical field of quantum dot preparation, and particularly relates to a post-processing method of quantum dots.

Background

Nanoscience and nanotechnology are emerging scientific technologies and have potential application value and economic benefits, and thus are receiving attention of scientists worldwide. Nanocrystals (NCs) can exhibit very interesting phenomena with respect to bulk materials, mainly depending on their electrical, optical, magnetic and electrochemical properties (which are not achievable with corresponding bulk materials). Semiconductor nanocrystals, also known as Quantum Dots (QDs), range in size from 1 to 10nm, and when the size of the particle size is varied, the band gap valence band and conduction band of the semiconductor nanocrystal are also altered (quantum size effect), such as absorption and emission of CdSe nanocrystals covering almost the entire visible spectral range, and thus, semiconductor nanocrystals exhibit size-dependent phenomena of photoluminescence. Semiconductor nanocrystals have been used in many areas of technology such as biomarkers, diagnostics, chemical sensors, light emitting diodes, electroluminescent devices, photovoltaic devices, lasers, and electronic transistors, among others. However, different types of semiconductor quantum dots are required to be prepared aiming at the application in different technical fields, and the preparation of high-quality semiconductor quantum dots is a precondition for the effective application of the size effect of the semiconductor quantum dots.

In the past decades, researchers have developed a number of methods to obtain high quality semiconductor nanocrystals. The prior art mainly comprises surface ligand treatment and core-shell structure design. In general, the prepared quantum dots are directly used as functional materials without treatment, and the quantum dots have the problems of poor solubility and the like when used.

Disclosure of Invention

The invention aims to provide a post-treatment method of quantum dots, and aims to solve the problem that the prepared quantum dots are insufficient in solubility when being used without being treated.

In order to achieve the purpose, the invention adopts the following technical scheme:

the invention provides a post-processing method of quantum dots, which comprises the following steps:

providing an initial quantum dot solution;

mixing and heating the initial quantum dot solution and a first compound or a first compound combination for the first time to obtain a first quantum dot solution;

mixing and heating the first quantum dot solution and a second compound or a second compound combination in a second order to obtain a second quantum dot solution;

mixing and heating the second quantum dot solution and a third compound or a third compound combination in a third sequence to obtain a third quantum dot solution;

wherein the first compound is selected from an organic carboxylic acid, an organic amine or an organic phosphine, and the first compound combination is selected from an organic carboxylic acid and an organic phosphine or an organic amine and an organic phosphine;

the second compound is selected from organic carboxylic acid, organic amine or organic phosphine, and the second compound combination is selected from organic carboxylic acid and organic phosphine or organic amine and organic phosphine;

the third compound is selected from organic carboxylic acid, organic amine or organic phosphine, and the third compound is selected from organic carboxylic acid and organic phosphine or organic amine and organic phosphine;

and only one of the compounds adopted in the mixing and heating process is organic carboxylic acid or the compound combination adopted contains organic carboxylic acid, and only one of the compounds adopted in the mixing and heating process is organic amine or the compound combination adopted contains organic amine;

the three-order mixing and heating process comprises an A order for mixing and heating the quantum dot solution of the order with the organic amine or the organic amine and the organic phosphine, and a B order for mixing and heating the quantum dot solution of the order with the organic carboxylic acid or the organic carboxylic acid and the organic phosphine; and the B order precedes the a order;

the quantum dots in the initial quantum dot solution are mononuclear quantum dots of the IIB-VIA nanocrystalline or core-shell quantum dots of the IIB-VIA nanocrystalline with shell layers.

The quantum dot post-treatment method provided by the invention adopts the first compound or the first compound combination, the second compound or the second compound combination and the third compound or the third compound combination to sequentially mix and heat the quantum dots in the initial quantum dot solution in three orders. Wherein the compound or combination of compounds employed in the mixing and heating process of adjacent orders cannot simultaneously contain organic carboxylic acid or the compound or combination of compounds employed in the mixing and heating process of adjacent orders cannot simultaneously contain organic amine; and the combination of compounds employed in the same sequence of mixing and heating cannot contain both organic carboxylic acids and organic amines; and at least one of the compounds or compound combinations used in the sequential mixing and heating process contains an organic carboxylic acid, an organic amine or an organic phosphine. By adopting the method for post-treating the quantum dots, on one hand, the first compound or the first compound combination, the second compound or the second compound combination, and the third compound or the third compound combination can fully passivate metal atoms and non-metal atoms on the surfaces of the quantum dots, so that the water and oxygen resistance of the quantum dots is improved, and the stability of the quantum dots is further improved; on the other hand, the first compound or the first compound combination, the second compound or the second compound combination, and the third compound or the third compound combination are combined on the surface of the quantum dot in a mutually staggered manner, and due to different types and different chain lengths of the three types of compounds or the compound combinations, the steric hindrance effect of the ligand on the surface of the quantum dot is increased, and the solubility of the quantum dot is further increased. In addition, the method for post-processing the quantum dots can improve the fluorescence intensity of the quantum dots or improve the transient fluorescence of the quantum dots.

Furthermore, the organic carboxylic acid is preferably subjected to post-treatment on the initial quantum dots by organic amine, so that the quantum dots are promoted to be self-cured, cation vacancies on the surfaces of the quantum dots are reduced, and the fluorescence intensity is improved; and then, the organic amine is utilized to carry out post-treatment on the quantum dots, so that the melting point of the mixed liquid of the quantum dots can be effectively reduced, the turbidity of the mixed liquid of the quantum dots is reduced, meanwhile, the diversity of ligands on the surfaces of the quantum dots can be improved, and the film forming property can be improved. The organic phosphine is used for treating the quantum dots, so that the anion defects can be reduced, the surface ligand diversity can be increased, and the organic phosphine is not influenced by the sequential treatment sequence of organic carboxylic acid or organic amine. .

Detailed Description

In order to make the technical problems, technical solutions and advantageous effects to be solved by the present invention more clearly apparent, the present invention is further described in detail below with reference to the following embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.

In the description of the present invention, it is to be understood that the terms "first", "second" and the like are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implying any number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.

The embodiment of the invention provides a post-processing method of quantum dots, which comprises the following steps:

s01, providing an initial quantum dot solution;

s02, mixing and heating the initial quantum dot solution and a first compound or a first compound combination in a first sequence to obtain a first quantum dot solution;

According to the quantum dot post-treatment method provided by the embodiment of the invention, the first compound or the first compound combination, the second compound or the second compound combination and the third compound or the third compound combination are adopted to sequentially mix and heat the quantum dots in the initial quantum dot solution in three orders. Wherein the compound or the compound combination adopted in the mixing and heating process of adjacent sequences cannot simultaneously contain organic carboxylic acid or the compound combination adopted in the mixing and heating process of adjacent sequences cannot simultaneously contain organic amine; and the compound or combination of compounds employed in the same sequence of mixing and heating cannot contain both an organic carboxylic acid and an organic amine; and at least one of the compounds or compound combinations used in the sequential mixing and heating process contains an organic carboxylic acid, an organic amine or an organic phosphine. By adopting the method for post-treating the quantum dots, on one hand, the first compound or the first compound combination, the second compound or the second compound combination, and the third compound or the third compound combination can fully passivate metal atoms and non-metal atoms on the surfaces of the quantum dots, so that the water and oxygen resistance of the quantum dots is improved, and the stability of the quantum dots is further improved; on the other hand, the first compound or the first compound combination, the second compound or the second compound combination, and the third compound or the third compound combination are combined on the surface of the quantum dot in a mutually staggered manner, and due to different types and different chain lengths of the three types of compounds or the compound combinations, the steric hindrance effect of the ligand on the surface of the quantum dot is increased, and the solubility of the quantum dot is further increased. In addition, the method for post-processing the quantum dots can improve the fluorescence intensity of the quantum dots or improve the transient fluorescence of the quantum dots.

Specifically, in step S01, the initial quantum dot solution is a solution containing quantum dot nanocrystals and a non-eutectic solvent. In addition, the initial quantum dot solution also contains a small amount of organic surface modifier, a small amount of anion precursor and/or cation precursor.

In the embodiment of the present invention, the initial quantum dot solution is not strictly limited. The initial quantum dot solution can be a quantum dot solution obtained by preparing quantum dots by a one-step method, a quantum dot solution obtained by preparing quantum dots by a two-step method, or a quantum dot solution obtained by preparing quantum dots by a three-step method. In addition, the initial quantum dot solution can also be a quantum dot solution which is dispersed in a non-eutectic solvent after purification treatment. The one-step method refers to that the core-shell quantum dots are subjected to long core and long shell in one reaction vessel. The two-step method means that the preparation of the core-shell quantum dot comprises two steps: and (3) carrying out core growing in a reaction vessel, taking out the quantum dot core, and placing the quantum dot core in another reaction solvent for shell growing. The three-step method refers to that the preparation of the core-shell quantum dot comprises two steps: and one reaction vessel is used for carrying out core growth, the quantum dot cores are taken out and then placed in another reaction solvent for intermediate shell layer growth, and the core-shell quantum dots containing the intermediate shell layers are taken out and placed in a third reaction vessel for outermost shell layer growth.

Preferably, the quantum dots in the initial quantum dot solution are oil-soluble quantum dots, that is, the surface of the quantum dots contains oil-soluble ligands. Specifically, the oil-soluble ligand is an oil-soluble organic small molecule, including but not limited to organic carboxylic acids, organic amines, organic phosphonic acids, organic phosphines, organic phosphine oxides, and organic thiols.

Specifically, the quantum dots in the initial quantum dot solution using the post-treatment method of the embodiment of the present invention may be single-core quantum dots of a iib-via nanocrystal or core-shell quantum dots whose shell is a iib-via nanocrystal, single-core quantum dots of a iiia-va nanocrystal or core-shell quantum dots whose shell is a iiia-via nanocrystal, single-core quantum dots or shell of an iva-via nanocrystal, single-core quantum dots or shell of a ib-iiia-via nanocrystal, single-core quantum dots or shell of a ia-iiia-via nanocrystal, and core-core quantum dots or shell of a ia-iva-viia nanocrystal.

In the step S02, the first compound or the first compound combination, the second compound or the second compound combination, and the third compound or the third compound combination are sequentially mixed and heated, so as to process the initial quantum dots, thereby improving the stability and solubility of the quantum dots.

In the embodiment of the invention, the initial quantum dot solution is mixed with organic carboxylic acid, organic amine, organic phosphine, organic carboxylic acid and organic phosphine or organic amine and organic phosphine in a first sequence and heated to obtain a first quantum dot solution; mixing and heating the first quantum dot solution and organic carboxylic acid, organic amine, organic phosphine, organic carboxylic acid and organic phosphine or organic amine and organic phosphine in a second order to obtain a second quantum dot solution; and mixing and heating the second quantum dot solution and organic carboxylic acid, organic amine, organic phosphine, organic carboxylic acid and organic phosphine or organic amine and organic phosphine in a third order to obtain a third quantum dot solution.

Preferably, the organic amine is at least one of linear chain organic amines containing a single amino group, and the number of carbon atoms in the organic amine is 8-18. Preferably, the organic carboxylic acid is at least one of linear organic carboxylic acids containing a single carboxyl group, and the number of carbon atoms in the organic carboxylic acid is 8 to 18. Preferably, the organic phosphine is selected from, but not limited to, trioctylphosphine, tributylphosphine. Further, the organic amine, the organic carboxylic acid and the organic phosphine molecules are liquid at room temperature.

In some embodiments, when the organic carboxylic acid and the organic phosphine are combined as the same sequence of compounds, the molar ratio of the organic carboxylic acid to the organic phosphine is (3-7): (7-3). In some embodiments, when the organic amine and the organic phosphine are combined as the same order of compounds, the molar ratio of the organic amine to the organic phosphine is (3-7): (7-3).

In some embodiments, the ratio of the molar to mass of the quantum dots in the initial quantum dot solution to the first compound or the combination of first compounds is (0.5 to 10 mmol): and 100mg, mixing and heating the initial quantum dot solution and the first compound or the first compound combination in a first order to obtain a first quantum dot solution.

In some embodiments, the molar to mass ratio of the second compound or the second compound combination to the quantum dots in the first quantum dot solution is (0.5 to 10 mmol): and 100mg, mixing and heating the first quantum dot solution and a second compound or a second compound combination in a second sequence to obtain a second quantum dot solution.

In some embodiments, the molar to mass ratio of the third compound or the combination of the third compounds to the quantum dots in the second quantum dot solution is (0.5 to 10 mmol): and 100mg, mixing and heating the second quantum dot solution and a third compound or a third compound combination in a third sequence to obtain a third quantum dot solution.

In the embodiment of the invention, the quantum dots in the initial quantum dot solution can be treated by respectively selecting different types of compounds or compound combinations in three sequential mixing and heating processes. It should be noted that, since the organic carboxylic acid and the organic amine are chemically reacted when they are added simultaneously to reduce the post-treatment effect, the first compound or the first combination of compounds, the second compound or the second combination of compounds, and the third compound or the third combination of compounds cannot be added simultaneously to be mixed and heated. In addition, the organic carboxylic acid cannot be simultaneously contained in the compound or the combination of compounds employed in the mixing and heating process of adjacent orders or the organic amine cannot be simultaneously contained in the compound or the combination of compounds employed in the mixing and heating process of adjacent orders; and the combination of compounds employed in the same sequence of mixing and heating cannot contain both organic carboxylic acids and organic amines; and at least one of the compounds or compound combinations used in the sequential mixing and heating process contains an organic carboxylic acid, an organic amine or an organic phosphine.

The invention can adopt various embodiments to process the initial quantum dots, and improve the stability and the solubility of the quantum dots.

In one embodiment, the initial quantum dot solution is mixed with an organic carboxylic acid or the initial quantum dot solution is mixed with an organic carboxylic acid and an organic phosphine in a first order and heated, and the organic carboxylic acid can optimize the cation vacancies on the surface of the quantum dot after the initial quantum dot is treated. And further, a second compound or a second compound combination is adopted to mix and heat the quantum dots in a second sequence, a third compound or a third compound combination is adopted to mix and heat the quantum dots in a third sequence, and the second compound or the second compound combination, the third compound or the third compound combination and the organic carboxylic acid of the first compound or the first compound combination can be jointly attached to the surfaces of the quantum dots in a staggered manner, so that not only is the steric hindrance effect of the ligands on the surfaces of the quantum dots increased, but also the potential barrier effect of the ligands on the surfaces of the quantum dots is enhanced, the diffusion radius of excitons is reduced, and the fluorescence intensity of the quantum dots is enhanced.

In some embodiments, the initial quantum dot solution is subjected to a first sequence of mixing with an organic carboxylic acid and heating to obtain a first quantum dot solution.

In some embodiments, the initial quantum dot solution is subjected to a first sequence of mixing and heating with an organic carboxylic acid to obtain a first quantum dot solution; mixing the first quantum dot solution and organic amine in a second order and heating to obtain a second quantum dot solution; and mixing and heating the second quantum dot solution and organic phosphine for the third time to obtain a third quantum dot solution.

In some embodiments, the initial quantum dot solution is subjected to a first sequence of mixing and heating with an organic carboxylic acid to obtain a first quantum dot solution; mixing the first quantum dot solution and organic amine in a second order and heating to obtain a second quantum dot solution; and mixing and heating the second quantum dot solution, organic carboxylic acid and organic phosphine in a third sequence to obtain a third quantum dot solution.

In some embodiments, the initial quantum dot solution is subjected to a first sequence of mixing and heating with an organic carboxylic acid to obtain a first quantum dot solution; mixing and heating the first quantum dot solution, organic amine and organic phosphine in a second order to obtain a second quantum dot solution; and mixing and heating the second quantum dot solution and organic phosphine for the third time to obtain a third quantum dot solution.

In some embodiments, the initial quantum dot solution is subjected to a first sequence of mixing and heating with an organic carboxylic acid to obtain a first quantum dot solution; mixing and heating the first quantum dot solution, organic amine and organic phosphine in a second order to obtain a second quantum dot solution; and mixing and heating the second quantum dot solution, organic carboxylic acid and organic phosphine in a third sequence to obtain a third quantum dot solution.

In some embodiments, the initial quantum dot solution is subjected to a first sequence of mixing and heating with an organic carboxylic acid to obtain a first quantum dot solution; mixing the first quantum dot solution and organic phosphine for the second time and heating to obtain a second quantum dot solution; and mixing and heating the second quantum dot solution and organic amine in a third order to obtain a third quantum dot solution.

In some embodiments, the initial quantum dot solution is subjected to a first sequence of mixing and heating with an organic carboxylic acid to obtain a first quantum dot solution; mixing the first quantum dot solution and organic phosphine for the second time and heating to obtain a second quantum dot solution; and mixing and heating the second quantum dot solution, organic amine and organic phosphine in a third order to obtain a third quantum dot solution.

In some embodiments, the initial quantum dot solution is subjected to a first sequence of mixing and heating with an organic carboxylic acid and an organic phosphine to yield a first quantum dot solution.

In some embodiments, the initial quantum dot solution is subjected to a first sequence of mixing and heating with an organic carboxylic acid and an organic phosphine to obtain a first quantum dot solution; mixing the first quantum dot solution and organic amine in a second order and heating to obtain a second quantum dot solution; and mixing and heating the second quantum dot solution and organic phosphine for the third time to obtain a third quantum dot solution.

In some embodiments, the initial quantum dot solution is subjected to a first sequence of mixing and heating with an organic carboxylic acid and an organic phosphine to obtain a first quantum dot solution; mixing the first quantum dot solution and organic amine in a second order and heating to obtain a second quantum dot solution; and mixing and heating the second quantum dot solution, organic carboxylic acid and organic phosphine in a third sequence to obtain a third quantum dot solution.

In some embodiments, the initial quantum dot solution is subjected to a first sequence of mixing and heating with an organic carboxylic acid and an organic phosphine to obtain a first quantum dot solution; mixing and heating the first quantum dot solution, organic amine and organic phosphine in a second order to obtain a second quantum dot solution; and mixing and heating the second quantum dot solution and organic phosphine for the third time to obtain a third quantum dot solution.

In some embodiments, the initial quantum dot solution is subjected to a first sequence of mixing and heating with an organic carboxylic acid and an organic phosphine to obtain a first quantum dot solution; mixing and heating the first quantum dot solution, organic amine and organic phosphine in a second order to obtain a second quantum dot solution; and mixing and heating the second quantum dot solution, organic carboxylic acid and organic phosphine in a third sequence to obtain a third quantum dot solution.

In some embodiments, the initial quantum dot solution is subjected to a first sequence of mixing and heating with an organic carboxylic acid and an organic phosphine to obtain a first quantum dot solution; mixing the first quantum dot solution and organic phosphine for the second time and heating to obtain a second quantum dot solution; and mixing and heating the second quantum dot solution and organic amine in a third order to obtain a third quantum dot solution.

In some embodiments, the initial quantum dot solution is subjected to a first sequence of mixing and heating with an organic carboxylic acid and an organic phosphine to obtain a first quantum dot solution; mixing the first quantum dot solution and organic phosphine for the second time and heating to obtain a second quantum dot solution; and mixing and heating the second quantum dot solution, organic amine and organic phosphine in a third order to obtain a third quantum dot solution.

In another embodiment, the initial quantum dot solution and the organic amine or the initial quantum dot solution, the organic amine and the organic phosphine are mixed and heated in the first order, so that the defect state of the surface of the quantum dot can be effectively reduced, and the fluorescence intensity of the quantum dot is improved. However, after the initial quantum dots are treated by the organic amine, the surface of the quantum dots contains the protonated organic amine, which can generate exciton capture on the surface of the quantum dots, and the transient fluorescence lifetime of the quantum dots is reduced. After the second compound or the second compound combination is adopted to carry out second order mixing and heating on the quantum dots, and the third compound or the third compound combination is adopted to carry out third order mixing and heating on the quantum dots, the second compound or the second compound combination, the third compound or the third compound combination can carry out post-treatment on the quantum dots, so that the protonated organic amine on the surfaces of the quantum dots can be effectively removed, and the transient fluorescence life of the quantum dots is further prolonged.

In some embodiments, the initial quantum dot solution is subjected to a first sequence of mixing with an organic amine and heating to obtain a first quantum dot solution.

In some embodiments, the initial quantum dot solution is subjected to a first sequence of mixing with an organic amine and heating to obtain a first quantum dot solution; mixing and heating the first quantum dot solution and organic carboxylic acid in a second order to obtain a second quantum dot solution; and mixing and heating the second quantum dot solution and organic phosphine for the third time to obtain a third quantum dot solution.

In some embodiments, the initial quantum dot solution is subjected to a first sequence of mixing with an organic amine and heating to obtain a first quantum dot solution; mixing and heating the first quantum dot solution and organic carboxylic acid in a second order to obtain a second quantum dot solution; and mixing and heating the second quantum dot solution, organic amine and organic phosphine in a third order to obtain a third quantum dot solution.

In some embodiments, the initial quantum dot solution is subjected to a first sequence of mixing with an organic amine and heating to obtain a first quantum dot solution; mixing and heating the first quantum dot solution, organic carboxylic acid and organic phosphine in a second order to obtain a second quantum dot solution; and mixing and heating the second quantum dot solution and organic phosphine for the third time to obtain a third quantum dot solution.

In some embodiments, the initial quantum dot solution is subjected to a first sequence of mixing with an organic amine and heating to obtain a first quantum dot solution; mixing and heating the first quantum dot solution, organic carboxylic acid and organic phosphine in a second order to obtain a second quantum dot solution; and mixing and heating the second quantum dot solution, organic amine and organic phosphine in a third order to obtain a third quantum dot solution.

In some embodiments, the initial quantum dot solution is subjected to a first sequence of mixing with an organic amine and heating to obtain a first quantum dot solution; mixing the first quantum dot solution and organic phosphine for the second time and heating to obtain a second quantum dot solution; and mixing and heating the second quantum dot solution and the organic carboxylic acid in a third sequence to obtain a third quantum dot solution.

In some embodiments, the initial quantum dot solution is subjected to a first sequence of mixing with an organic amine and heating to obtain a first quantum dot solution; mixing the first quantum dot solution and organic phosphine for the second time and heating to obtain a second quantum dot solution; and mixing and heating the second quantum dot solution, organic carboxylic acid and organic phosphine in a third sequence to obtain a third quantum dot solution.

In some embodiments, the initial quantum dot solution is subjected to a first sequence of mixing and heating with an organic amine and an organic phosphine to yield a first quantum dot solution.

In some embodiments, the initial quantum dot solution is subjected to a first order of mixing and heating with an organic amine and an organic phosphine to obtain a first quantum dot solution; mixing and heating the first quantum dot solution and organic carboxylic acid in a second order to obtain a second quantum dot solution; and mixing and heating the second quantum dot solution and organic phosphine for the third time to obtain a third quantum dot solution.

In some embodiments, the initial quantum dot solution is subjected to a first order of mixing and heating with an organic amine and an organic phosphine to obtain a first quantum dot solution; mixing and heating the first quantum dot solution and organic carboxylic acid in a second order to obtain a second quantum dot solution; and mixing and heating the second quantum dot solution, organic amine and organic phosphine in a third order to obtain a third quantum dot solution.

In some embodiments, the initial quantum dot solution is subjected to a first order of mixing and heating with an organic amine and an organic phosphine to obtain a first quantum dot solution; mixing and heating the first quantum dot solution, organic carboxylic acid and organic phosphine in a second order to obtain a second quantum dot solution; and mixing and heating the second quantum dot solution and organic phosphine for the third time to obtain a third quantum dot solution.

In some embodiments, the initial quantum dot solution is subjected to a first order of mixing and heating with an organic amine and an organic phosphine to obtain a first quantum dot solution; mixing and heating the first quantum dot solution, organic carboxylic acid and organic phosphine in a second order to obtain a second quantum dot solution; and mixing and heating the second quantum dot solution, organic amine and organic phosphine in a third order to obtain a third quantum dot solution.

In some embodiments, the initial quantum dot solution is subjected to a first order of mixing and heating with an organic amine and an organic phosphine to obtain a first quantum dot solution; mixing the first quantum dot solution and organic phosphine for the second time and heating to obtain a second quantum dot solution; and mixing and heating the second quantum dot solution and the organic carboxylic acid in a third sequence to obtain a third quantum dot solution.

In some embodiments, the initial quantum dot solution is subjected to a first order of mixing and heating with an organic amine and an organic phosphine to obtain a first quantum dot solution; mixing the first quantum dot solution and organic phosphine for the second time and heating to obtain a second quantum dot solution; and mixing and heating the second quantum dot solution, organic carboxylic acid and organic phosphine in a third sequence to obtain a third quantum dot solution.

In yet another embodiment, the initial quantum dot solution is first mixed with an organic phosphine and heated, and the organic phosphine treats the initial quantum dot to optimize the anion vacancy on the surface of the quantum dot. And after a second compound or a second compound combination is further adopted to carry out second order mixing and heating on the quantum dots, and a third compound or a third compound combination is further adopted to carry out third order mixing and heating on the quantum dots, the second compound or the second compound combination, the third compound or the third compound combination and the first compound or the first compound combination organic phosphine can be jointly attached to the surfaces of the quantum dots in a staggered mode, so that not only is the steric hindrance effect of the ligands on the surfaces of the quantum dots increased, but also the potential barrier effect of the ligands on the surfaces of the quantum dots is strengthened, the diffusion radius of excitons is reduced, and further the fluorescence intensity of the quantum dots is strengthened.

In some embodiments, the initial quantum dot solution is first sequentially mixed with an organophosphine and heated to obtain a first quantum dot solution.

In some embodiments, the initial quantum dot solution is first sequentially mixed with an organophosphine and heated to obtain a first quantum dot solution; mixing and heating the first quantum dot solution and organic carboxylic acid in a second order to obtain a second quantum dot solution; and mixing and heating the second quantum dot solution and organic amine in a third order to obtain a third quantum dot solution.

In some embodiments, the initial quantum dot solution is first sequentially mixed with an organophosphine and heated to obtain a first quantum dot solution; mixing and heating the first quantum dot solution and organic carboxylic acid in a second order to obtain a second quantum dot solution; and mixing and heating the second quantum dot solution, organic amine and organic phosphine in a third order to obtain a third quantum dot solution.

In some embodiments, the initial quantum dot solution is first sequentially mixed with an organophosphine and heated to obtain a first quantum dot solution; mixing and heating the first quantum dot solution, organic carboxylic acid and organic phosphine in a second order to obtain a second quantum dot solution; and mixing and heating the second quantum dot solution and organic amine in a third order to obtain a third quantum dot solution.

In some embodiments, the initial quantum dot solution is first sequentially mixed with an organophosphine and heated to obtain a first quantum dot solution; mixing and heating the first quantum dot solution, organic carboxylic acid and organic phosphine in a second order to obtain a second quantum dot solution; and mixing and heating the second quantum dot solution, organic amine and organic phosphine in a third order to obtain a third quantum dot solution.

In some embodiments, the initial quantum dot solution is first sequentially mixed with an organophosphine and heated to obtain a first quantum dot solution; mixing the first quantum dot solution and organic amine in a second order and heating to obtain a second quantum dot solution; and mixing and heating the second quantum dot solution and the organic carboxylic acid in a third sequence to obtain a third quantum dot solution.

In some embodiments, the initial quantum dot solution is first sequentially mixed with an organophosphine and heated to obtain a first quantum dot solution; mixing the first quantum dot solution and organic amine in a second order and heating to obtain a second quantum dot solution; and mixing and heating the second quantum dot solution, organic carboxylic acid and organic phosphine in a third sequence to obtain a third quantum dot solution.

In some embodiments, the initial quantum dot solution is first sequentially mixed with an organophosphine and heated to obtain a first quantum dot solution; mixing and heating the first quantum dot solution, organic amine and organic phosphine in a second order to obtain a second quantum dot solution; and mixing and heating the second quantum dot solution and the organic carboxylic acid in a third sequence to obtain a third quantum dot solution.

In some embodiments, the initial quantum dot solution is first sequentially mixed with an organophosphine and heated to obtain a first quantum dot solution; mixing and heating the first quantum dot solution, organic amine and organic phosphine in a second order to obtain a second quantum dot solution; and mixing and heating the second quantum dot solution, organic carboxylic acid and organic phosphine in a third sequence to obtain a third quantum dot solution.

In a specific embodiment, the quantum dots in the initial quantum dot solution are mononuclear quantum dots of IIB-VIA nanocrystals or core-shell quantum dots of IIB-VIA nanocrystals; wherein the IIB-VIA nanocrystals include ZnS, ZnSe, ZnTe, CdSe, CdS, CdTe, CdZnS, CdZnSe, PbSeS, CdZnSeS, CdZnTe, CdSe/ZnS, CdZnSe/ZnS, CdS/CdSe/CdS, ZnS/CdSe/ZnS, etc., but are not limited thereto.

When the quantum dots in the initial quantum dot solution are mononuclear quantum dots of IIB-VIA nanocrystals or core-shell quantum dots of IIB-VIA nanocrystals, in the process of mixing and heating the three sequences, the method comprises the step of mixing and heating the sequence of the quantum dot solution with organic amine or organic amine and organic phosphine, and the step of mixing and heating the sequence of the quantum dot solution with organic carboxylic acid or organic carboxylic acid and organic phosphine; and the B order precedes the a order. By adopting the method to treat the mononuclear quantum dots of the IIB-VIA nanocrystalline or the core-shell quantum dots with the shell layers of the IIB-VIA nanocrystalline, the dissolubility and stability of the quantum dots can be improved, and the fluorescence intensity and film forming property of the quantum dots can be further improved. Specifically, the organic carboxylic acid is preferably subjected to aftertreatment on the initial quantum dot by organic amine, so that the quantum dot is promoted to be self-cured, cation vacancies on the surface of the quantum dot are reduced, and the fluorescence intensity is improved; and then, the organic amine is utilized to carry out post-treatment on the quantum dots, so that the melting point of the mixed liquid of the quantum dots can be effectively reduced, the turbidity of the mixed liquid of the quantum dots is reduced, meanwhile, the diversity of ligands on the surfaces of the quantum dots can be improved, and the film forming property can be improved. The organic phosphine is used for treating the mononuclear quantum dots of the IIB-VIA nanocrystal or the core-shell quantum dots with the shell layer of the IIB-VIA nanocrystal, so that the anion defects can be reduced, the surface ligand diversity can be increased, and the organic phosphine is not influenced by the sequential treatment sequence of organic carboxylic acid or organic amine.

In some embodiments, the initial quantum dot solution is subjected to a first sequence of mixing with an organic carboxylic acid and heating to obtain a first quantum dot solution; mixing and heating the first quantum dot solution and organic amine or mixing and heating the first quantum dot solution, organic amine and organic phosphine in a second order to obtain a second quantum dot solution; and mixing and heating the second quantum dot solution and organic phosphine for the third time to obtain a third quantum dot solution.

In some embodiments, the initial quantum dot solution is subjected to a first sequence of mixing and heating with an organic carboxylic acid and an organic phosphine to yield a first quantum dot solution; mixing the first quantum dot solution and organic phosphine for the second time and heating to obtain a second quantum dot solution; and mixing and heating the second quantum dot solution and organic amine in a third order or mixing and heating the second quantum dot solution, organic amine and organic phosphine in the third order to obtain a third quantum dot solution.

In some embodiments, the initial quantum dot solution is subjected to a first sequence of mixing and heating with an organic carboxylic acid and an organic phosphine to yield a first quantum dot solution; mixing and heating the first quantum dot solution and organic amine in a second order or mixing and heating the first quantum dot solution, organic amine and organic phosphine in a second order to obtain a second quantum dot solution; and mixing and heating the second quantum dot solution and organic phosphine for the third time to obtain a third quantum dot solution.

In some embodiments, the initial quantum dot solution is subjected to a first sequence of mixing and heating with an organic carboxylic acid and an organic phosphine to yield a first quantum dot solution; mixing the first quantum dot solution and organic phosphine for the second time and heating to obtain a second quantum dot solution; and mixing and heating the second quantum dot solution and organic amine in a third order or mixing and heating the second quantum dot solution, organic amine and organic phosphine in a third order to obtain a third quantum dot solution.

In some embodiments, the initial quantum dot solution is first sequentially mixed with an organophosphine and heated to obtain a first quantum dot solution; mixing and heating the first quantum dot solution and the organic carboxylic acid in a second order or mixing and heating the first quantum dot solution, the organic carboxylic acid and the organic phosphine in the second order to obtain a second quantum dot solution; and mixing and heating the second quantum dot solution and organic amine in a third order or mixing and heating the second quantum dot solution, organic amine and organic phosphine in a third order to obtain a third quantum dot solution.

In the above embodiment in which the quantum dot in the initial quantum dot solution is a mononuclear quantum dot of an iib-via nanocrystal or a core-shell quantum dot of which the shell layer is an iib-via nanocrystal, preferably, the step of mixing and heating the sequential quantum dot solution with an organic carboxylic acid or the step of mixing and heating the sequential quantum dot solution with an organic carboxylic acid and an organic phosphine is performed at a temperature of 200 to 350 ℃. Preferably, the step of mixing and heating the sequential quantum dot solution and the organic amine or the step of mixing and heating the sequential quantum dot solution, the organic amine and the organic phosphine is performed at a temperature of 80 ℃ to 200 ℃. Preferably, the step of mixing and heating the quantum dot solution and the organic phosphine in the sequence is carried out at the temperature of 80-350 ℃.

In a specific embodiment, the quantum dots in the initial quantum dot solution are mononuclear quantum dots of IIIA-VA nanocrystals or core-shell quantum dots of IIIA-VA nanocrystals; the iiia-va nanocrystals include, but are not limited to, InP, InN, InAs, InSb, GaAs, GaSb, GaP, GaN, InGaP, and the like.

And when the quantum dots in the initial quantum dot solution are mononuclear quantum dots of the IIIA-VA nanocrystal or core-shell quantum dots of the IIIA-VA nanocrystal, mixing and heating the initial quantum dot solution and organic amine in a first order or mixing and heating the initial quantum dot solution, the organic amine and organic phosphine in the first order to obtain a first quantum dot solution. By adopting the method to process the mononuclear quantum dots of the IIIA-VA nanocrystalline or the core-shell quantum dots of which the shell layers are the IIIA-VA nanocrystalline, the dissolubility and stability of the quantum dots can be improved, and the transient fluorescence and size uniformity of the quantum dots can be further improved. Specifically, the quantum dots are subjected to post-treatment by using the organic amine, and the protonated organic amine exists on the surfaces of the quantum dots after the organic amine treatment, so that although the solubility and the stability of the quantum dots can be improved, the IIIA-VA quantum dots have small particle sizes and large exciton radiuses, the non-radiative transition of the surfaces of the quantum dots is increased, and the transient fluorescence is reduced. In order to compensate the effect generated after the organic amine treatment, the subsequent treatment is carried out by adopting a compound or a compound combination (without sequence requirement) containing organic carboxylic acid and organic phosphine, so that the protonated organic amine on the surface of the quantum dot can be eliminated, and the size uniformity of the quantum dot can be effectively improved. Specifically, the organic carboxylic acid can decompose part of the shell with unstable surface crystallization of the core-shell quantum dot; the decomposed metal atoms and organic carboxylic acid form a metal cation precursor again, and the anions and organic phosphine form an anion precursor again. The anion and cation precursors formed again in the post-treatment process can perform shell layer growth again on the surface of the core-shell quantum dot, and the core-shell quantum dot with small particles during shell layer growth performs shell growth again preferentially due to large relative body surface and high growth rate, so that the finally embodied effect is that the size of the core-shell quantum dot is relatively good in uniformity.

In the above embodiment in which the quantum dots in the initial quantum dot solution are mononuclear quantum dots of iiia-va nanocrystals or core-shell quantum dots of iiia-va nanocrystals in the shell layer, preferably, the step of mixing and heating the sequential quantum dot solution with the organic carboxylic acid or the step of mixing and heating the sequential quantum dot solution with the organic carboxylic acid and the organic phosphine is performed at a temperature of 150 to 350 ℃. Preferably, the step of mixing and heating the sequence of quantum dot solutions and the organic amine or the step of mixing and heating the sequence of quantum dot solutions and the organic amine and the organic phosphine is performed at a temperature of 80 ℃ to 150 ℃. Preferably, the step of mixing and heating the quantum dot solution and the organic phosphine in the sequence is carried out at the temperature of 80-350 ℃.

In a specific embodiment, the quantum dots in the initial quantum dot solution are mononuclear quantum dots of an IVA-VIA nanocrystal or core-shell quantum dots of an IVA-VIA nanocrystal; wherein the IVA-VIA nanocrystals comprise PPbSe, PbS, PbTe, PbSeS, PbSeTe and the like, but are not limited thereto.

And when the quantum dots in the initial quantum dot solution are mononuclear quantum dots with an IVA-VIA nanocrystal or core-shell quantum dots with a shell layer of the IVA-VIA nanocrystal, mixing the initial quantum dot solution and organic phosphine for the first time and heating to obtain a first quantum dot solution. By adopting the method to process the mononuclear quantum dots of the IVA-VIA nanocrystalline or the core-shell quantum dots with the shell layers of the IVA-VIA nanocrystalline, the dissolubility of the quantum dots can be improved, and the fluorescence intensity and the device stability of the quantum dots can be further improved. Specifically, after the organic phosphine is used for treating the quantum dots, anion vacancies on the surfaces of the quantum dots can be optimized to improve the fluorescence intensity. Because the exciton diffusion radius of the IVA-VIA quantum dot is larger, after the IVA-VIA quantum dot is treated by utilizing a second compound or a second compound combination containing organic carboxylic acid and organic amine and a third compound or a third compound combination (without sequential requirements), organic phosphine can be jointly attached to the surface of the quantum dot in a staggered way with the first compound or the first compound combination, so that the potential barrier effect of a ligand on the surface of the quantum dot is enhanced, the diffusion radius of the exciton is reduced, the water and oxygen resistance of the quantum dot is enhanced, and the stability of a device prepared by utilizing the quantum dot is further improved.

In some embodiments, the initial quantum dot solution is first sequentially mixed with an organophosphine and heated to obtain a first quantum dot solution; mixing and heating the first quantum dot solution and organic carboxylic acid in a second order or mixing and heating the first quantum dot solution, organic carboxylic acid and organic phosphine in a second order to obtain a second quantum dot solution; and mixing and heating the second quantum dot solution and organic amine in a third order or mixing and heating the initial quantum dot solution, organic amine and organic phosphine in a third order to obtain a third quantum dot solution.

In some embodiments, the initial quantum dot solution is first sequentially mixed with an organophosphine and heated to obtain a first quantum dot solution; mixing and heating the first quantum dot solution and organic amine in a second order or mixing and heating the first quantum dot solution, organic amine and organic phosphine in the second order to obtain a second quantum dot solution; and mixing and heating the second quantum dot solution and the organic carboxylic acid in a third order, or mixing and heating the initial quantum dot solution, the organic carboxylic acid and the organic phosphine in a third order to obtain a third quantum dot solution.

In the above embodiment where the quantum dot in the initial quantum dot solution is a mononuclear quantum dot of an iva-via nanocrystal or a core-shell quantum dot of a shell layer of an iva-via nanocrystal, preferably, the first mixing and heating step of the initial quantum dot solution and the organic phosphine is performed at a temperature of 200 to 350 ℃. Preferably, the second sequence of mixing and heating steps is carried out at a temperature of from 80 ℃ to 200 ℃. Preferably, the third sequence of mixing and heating steps is carried out at a temperature of from 80 ℃ to 350 ℃.

In a specific embodiment, the quantum dots in the initial quantum dot solution are mononuclear quantum dots of an IB-IIIA-VIA nanocrystal or core-shell quantum dots of an IB-IIIA-VIA nanocrystal; wherein, the IB-IIIA-VIA nanocrystals comprise CuInS, CuInSeS and the like, but are not limited thereto.

And when the quantum dots in the initial quantum dot solution are mononuclear quantum dots of the IB-IIIA-VIA nanocrystal or the shell layers are core-shell quantum dots of the IB-IIIA-VIA nanocrystal, mixing and heating the second quantum dot solution and organic amine in a third order or mixing and heating the second quantum dot solution, the organic amine and organic phosphine in a third order to obtain a third quantum dot solution. In this case, not only the solubility and stability of the quantum dot can be improved, but also the fluorescence intensity and color purity of the quantum dot can be further improved. Specifically, the IB-IIIA-VIA nanocrystalline quantum dots contain multiple elements, the surface defect state is more than that of other system quantum dots, and the surface exciton diffusion path is large, so when the quantum dots are treated by using organic phosphine or organic carboxylic acid and organic phosphine as a first compound or a first compound combination or a second compound combination, the surface defect state of the quantum dots can be effectively reduced to enhance the fluorescence intensity of the quantum dots, and then the quantum dots are treated by using a third compound or a third compound combination organic amine or organic amine and organic phosphine, and can be attached to the surfaces of the quantum dots together with the first compound or the first compound combination, the second compound or the second compound combination to jointly obstruct the exciton diffusion path on the surfaces of the quantum dots, so that the exciton composite radius is reduced, and the color purity of the quantum dots is improved.

In some embodiments, the initial quantum dot solution is subjected to a first sequence of mixing and heating with an organic carboxylic acid or with an organic carboxylic acid and an organic phosphine to yield a first quantum dot solution; mixing the first quantum dot solution and organic phosphine for the second time and heating to obtain a second quantum dot solution; and mixing and heating the second quantum dot solution and organic amine or the second quantum dot solution, the organic amine and organic phosphine in a third order to obtain a third quantum dot solution.

In some embodiments, the initial quantum dot solution is first sequentially mixed with an organophosphine and heated to obtain a first quantum dot solution; mixing and heating the first quantum dot solution and organic carboxylic acid or the first quantum dot solution, organic carboxylic acid and organic phosphine in a second order to obtain a second quantum dot solution; and mixing and heating the second quantum dot solution and organic amine or the second quantum dot solution, the organic amine and organic phosphine in a third order to obtain a third quantum dot solution.

In the embodiment that the quantum dots in the initial quantum dot solution are mononuclear quantum dots of IB-IIIA-VIA nanocrystals or core-shell quantum dots of IB-IIIA-VIA nanocrystals, preferably, the mixing and heating steps in the first order are performed at a temperature of 250-350 ℃. Preferably, the second sequence of mixing and heating steps is carried out at a temperature of from 150 ℃ to 250 ℃. Preferably, the step of mixing and heating the second quantum dot solution and the organic amine in the third order or the step of mixing and heating the second quantum dot solution, the organic amine and the organic phosphine in the third order is performed at a temperature of 80 ℃ to 350 ℃.

In a specific embodiment, the quantum dots in the initial quantum dot solution are mononuclear quantum dots of IA-IVA-VIIA nanocrystals or core-shell quantum dots of IA-IVA-VIIA nanocrystals; wherein the IA-IVA-VIIA nanocrystal comprises CsPbCl₃、CsPbBr₃、CsPbI₃And the like, but are not limited thereto.

When the quantum dots in the initial quantum dot solution are mononuclear quantum dots of IA-IVA-VIIA nanocrystalline or the shell layers are core-shell quantum dots of IA-IVA-VIIA nanocrystalline, the three sequential processes of mixing and heating comprise a sequence A of mixing and heating the sequential quantum dot solution with organic amine or organic amine and organic phosphine and a sequence B of mixing and heating the sequential quantum dot solution with organic carboxylic acid or organic carboxylic acid and organic phosphine; and the B order follows the a order. In this case, not only the solubility and stability of the quantum dot can be improved, but also the fluorescence intensity and transient fluorescence of the quantum dot can be further improved. Specifically, the organic amine preferentially carries out aftertreatment on the quantum dot by the organic carboxylic acid, so that the solubility and the stability of the quantum dot can be improved, but the protonated organic amine exists on the surface of the quantum dot after the organic amine treatment, and the photoelectric stability of the IA-IVA-VIIA nanocrystal is relatively poor and is easily influenced by the surface electrical property. In order to compensate the effect generated after the organic amine is treated, the organic amine which is protonated on the surface of the quantum dot can be effectively eliminated through the treatment of the organic carboxylic acid, so that the surface state of the quantum dot is improved, and the fluorescence intensity and the transient fluorescence are enhanced. In addition, the processing sequence of the organic phosphine to the IA-IVA-VIIA nanocrystal can reduce anion defects and increase the diversity of surface ligands, and is not influenced by the processing sequence of organic carboxylic acid or organic amine.

In some embodiments, the initial quantum dot solution is subjected to a first sequence of mixing with an organic amine and heating to obtain a first quantum dot solution; mixing and heating the first quantum dot solution and organic carboxylic acid in a second order or mixing and heating the first quantum dot solution, organic carboxylic acid and organic phosphine in a second order to obtain a second quantum dot solution; and mixing and heating the second quantum dot solution and organic phosphine for the third time to obtain a third quantum dot solution.

In some embodiments, the initial quantum dot solution is subjected to a first sequence of mixing and heating with an organic amine and an organic phosphine to obtain a first quantum dot solution; mixing and heating the first quantum dot solution and organic carboxylic acid in a second order or mixing and heating the first quantum dot solution, organic carboxylic acid and organic phosphine in a second order to obtain a second quantum dot solution; and mixing and heating the second quantum dot solution and organic phosphine for the third time to obtain a third quantum dot solution.

In some embodiments, the initial quantum dot solution is subjected to a first sequence of mixing with an organic amine and heating to obtain a first quantum dot solution; mixing the first quantum dot solution and organic phosphine for the second time and heating to obtain a second quantum dot solution; and mixing and heating the second quantum dot solution and the organic carboxylic acid in a third order or mixing and heating the second quantum dot solution, the organic carboxylic acid and the organic phosphine in a third order to obtain a third quantum dot solution.

In some embodiments, the initial quantum dot solution is subjected to a first sequence of mixing and heating with an organic amine and an organic phosphine to obtain a first quantum dot solution; mixing the first quantum dot solution and organic phosphine for the second time and heating to obtain a second quantum dot solution; and mixing and heating the second quantum dot solution and the organic carboxylic acid in a third order or mixing and heating the second quantum dot solution, the organic carboxylic acid and the organic phosphine in a third order to obtain a third quantum dot solution.

In some embodiments, the initial quantum dot solution is first sequentially mixed with an organophosphine and heated to obtain a first quantum dot solution; mixing and heating the first quantum dot solution and organic amine in a second order or mixing and heating the first quantum dot solution, organic amine and organic phosphine in a second order to obtain a second quantum dot solution; and mixing and heating the second quantum dot solution and the organic carboxylic acid in a third order or mixing and heating the second quantum dot solution, the organic carboxylic acid and the organic phosphine in a third order to obtain a third quantum dot solution.

In the embodiment that the quantum dots in the initial quantum dot solution are mononuclear quantum dots of IA-IVA-VIIA nanocrystal or core-shell quantum dots of IA-IVA-VIIA nanocrystal, preferably, the step of mixing and heating the sequential quantum dot solution and organic carboxylic acid or the step of mixing and heating the sequential quantum dot solution, organic carboxylic acid and organic phosphine is carried out at the temperature of 200-250 ℃. Preferably, the step of mixing and heating the sequence of quantum dot solutions and the organic amine or the step of mixing and heating the sequence of quantum dot solutions and the organic amine and the organic phosphine is performed at a temperature of 80 ℃ to 250 ℃. Preferably, the steps of mixing and heating the quantum dot solution and the organic phosphine in the sequence are carried out at the temperature of 80-250 ℃.

In the above embodiment of the present invention, in the step of mixing and heating the initial quantum dot solution and the first compound or the first compound combination in the first sequence, the mixing and heating time in the first sequence is 20 to 100 minutes; in the step of mixing and heating the first quantum dot solution and the second compound or the combination of the second compound in the second sequence, the mixing and heating time in the second sequence is 20-100 minutes; and in the step of mixing and heating the second quantum dot solution and the third compound or the third compound combination in the third sequence, the mixing and heating time in the third sequence is 20-100 minutes.

In the above embodiment of the present invention, the step of mixing and heating the initial quantum dot solution and the first compound or the first compound combination in the first order, the step of mixing and heating the first quantum dot solution and the second compound or the second compound combination in the second order, and the step of mixing and heating the second quantum dot solution and the third compound or the third compound combination in the third order are all performed in an inert gas environment.

The embodiment of the invention also provides the quantum dot prepared by the method.

Further, the embodiment of the invention provides application of the quantum dots in the fields of optical devices, optical films, core-shell structure nanocrystalline ink, glue, biological probes and the like.

Specifically, the optical device includes, but is not limited to, a quantum dot light emitting diode, and a quantum dot sensitized cell.

Specifically, the optical film includes, but is not limited to, quantum dot light-blocking diaphragms, quantum dot light-emitting tubes, and the like.

Specifically, the core-shell structure nanocrystal ink includes, but is not limited to, an ink in which quantum dots and other different chemical solvents are combined according to different proportions.

Specifically, the glue includes, but is not limited to, a glue formed by combining core-shell structure nanocrystals with other different chemical agents according to different viscosity ratios.

The following description will be given with reference to specific examples.

Example 1

1. The oil-soluble red CdSe quantum dots are prepared as follows:

11) cadmium oleate { Cd (OA)₂Preparation of precursors

Adding 1mmol of cadmium oxide (CdO), 8ml of Oleic Acid (OA) and 15ml of Octadecene (ODE) into a three-neck flask, vacuumizing for 30mins at normal temperature, heating to 180 ℃, discharging argon for 60mins, maintaining the temperature of 180 ℃, vacuumizing for 30mins, and cooling to room temperature for later use.

12) Preparation of selenium (Se) precursor one:

10mmol of Se was weighed into 10ml of Trioctylphosphine Oxide (TOP), heated to 170 ℃ for 30min and then cooled to 140 ℃.

13) Cadmium oleate { Cd (OA) in the step 11)₂Heating the precursor to 300 ℃, extracting 2ml of selenium (Se) precursor in the step 2), adding the selenium (Se) precursor into a three-necked bottle, reacting for 10min to obtain CdSe quantum dots, cooling to room temperature after the reaction is stopped, adding toluene and methanol, performing centrifugal separation, cleaning and drying to obtain red CdSe quantum dots, and dispersing the red CdSe quantum dots in n-hexane.

Treatment of CdSe quantum dots

Adding 2ml of the CdSe quantum dots dispersed in n-hexane prepared in the step 1) into 10ml of octadecyl solution, firstly heating the CdSe quantum dot solution to 150 ℃, exhausting gas for 20min to remove the redundant n-hexane solution in the solution, and then raising the temperature of the CdSe solution to 300 ℃.

3. Post-treating CdSe quantum dots with a first treatment (oleic acid), a second treatment (oleylamine), and a third treatment (trioctylphosphine)

31) Curing of CdSe quantum dots with OA: adding 1ml of oleic acid into the CdSe quantum dots in the step 2), and heating and curing at the temperature of 310 ℃ for 60 min.

32) After the completion of the OA aging, 1ml of oleylamine was added dropwise to the OA-aged CdSe quantum dots and heated and aged at 310 ℃ for 40 min.

33) After OAm ripening, 1ml of trioctylphosphine is added to the mixed solution and the OAm ripened CdSe quantum dots are heated and ripened for 40min at the temperature of 310 ℃.

34) And cooling the prepared CdSe quantum dot solution to room temperature after the post-treatment process is finished.

Purification of CdSe quantum dots

Adding a proper amount of ethyl acetate and ethanol into the quantum dot mixed solution obtained in the step 3) to carry out centrifugal separation on the CdSe quantum dot solution, dispersing the CdSe quantum dot solution obtained by the centrifugal separation into a proper amount of chloroform solution again to disperse the CdSe quantum dot solution, then adding acetone and methanol into the solution to carry out precipitation and centrifugal separation, and repeating the step once; and finally, drying the obtained CdSe quantum dots in vacuum.

The CdSe quantum dot prepared by the embodiment of the invention not only can improve the solubility and stability of the CdSe quantum dot, but also can further improve the fluorescence intensity of the quantum dot and form a film. The Quantum Yield (QY) of the solution at room temperature and after standing for 30 days was tested by an integrating sphere (Edinburgh-FS 5) of a fluorescence spectrometer, wherein the range of the QY values was 80-90% and 76-85%, respectively; testing the absorbance of the CdSe solution (with the concentration of 15mg/ml) under 700nm through an ultraviolet visible fluorescence spectrum, wherein the range of the absorbance value is 0.09-0.15, and the flatness of the CdSe core-shell quantum dots is 70-89% through AFM testing.

Example 2

A quantum dot post-processing method comprises the following steps:

1. the preparation of the oil-soluble red CdZnSeS/ZnS quantum dot is as follows

11) Cadmium oleate { Cd (OA)₂} and zinc oleate { Zn (OA)₂Preparation of precursors:

in a three-neck flask, 1mmol of cadmium oxide (CdO) and zinc acetate { Zn (Ac)₂8mmol, 8ml of Oleic Acid (OA) and 15ml of Octadecene (ODE), vacuumizing for 30mins at normal temperature, heating to 180 ℃, discharging argon for 60mins, maintaining the temperature of 180 ℃, vacuumizing for 30mins, and cooling to room temperature for later use.

12) Preparation of selenium (Se) precursor I

13) Preparing a second sulfur (S-TOP) precursor:

20mmol of S was weighed into 10ml of Trioctylphosphine Oxide (TOP), heated to 170 ℃ for 30min and then cooled to 140 ℃.

14) Cadmium oleate { Cd (OA) in the step 11)₂} and zinc oleate { Zn (OA)₂Heating the precursor to 300 ℃, extracting a mixed precursor of 2ml of selenium (Se) and 4ml of sulfur (S) in the step 12), adding the mixed precursor into a three-necked bottle, reacting for 10min to obtain CdZnSeS/ZnS quantum dots, cooling to room temperature after the reaction is stopped, adding toluene and methanol, carrying out centrifugal separation, cleaning and drying to obtain red CdZnSeS/ZnS quantum dots, and dispersing the red CdZnSeS/ZnS quantum dots in n-hexane.

Treatment of CdZnSeS/ZnS quantum dots

Taking 2ml of the CdSnSes/ZnS quantum dots dispersed in n-hexane prepared in the step 1), adding the CdSe/ZnS quantum dots into 10ml of octadecene solution, firstly heating the CdSe quantum dot solution to 150 ℃, exhausting gas for 20min to remove redundant n-hexane solution in the solution, and then raising the temperature of the CdSe solution to 300 ℃.

3. Post-processing CdZnSeS/ZnS quantum dots by utilizing first compound (oleic acid), second compound (trioctylphosphine) and third compound (oleylamine)

31) Curing of CdZnSeS/ZnS quantum dots with OA: 1ml of oleic acid is added into the CdZnSeS/ZnS quantum dots in the step 2) and heated and aged for 60min at the temperature of 310 ℃.

32) After the completion of the OA curing, 1ml of trioctylphosphine was added dropwise to the mixture and the OA cured CdZnSeS/ZnS quantum dots were heated and cured at 310 ℃ for 40 min.

33) After the curing of trioctylphosphine is finished, 1ml of oleylamine is added into the mixed solution and heated and cured for 40min at the temperature of 310 ℃ in the CdZnSeS/ZnS quantum dots cured by trioctylphosphine.

34) And after the post-treatment process is finished, cooling the prepared CdZnSeS/ZnS quantum dot solution to room temperature.

Purification of CdZnSeS/ZnS quantum dots

Adding a proper amount of ethyl acetate and ethanol into the quantum dot mixed solution obtained in the step 3) to carry out centrifugal separation on the CdZnSeS/ZnS quantum dot solution, dispersing the CdZnSeS/ZnS quantum dot solution obtained by the centrifugal separation into a proper amount of chloroform solution again to disperse the solution, then adding acetone and methanol into the solution to carry out precipitation and centrifugal separation, and repeating the step once; and finally, carrying out vacuum drying on the obtained CdZnSeS/ZnS quantum dots.

The CdZnSeS/ZnS quantum dot prepared by the embodiment of the invention not only can improve the solubility and stability of the CdZnSeS/ZnS quantum dot, but also can further improve the fluorescence intensity of the quantum dot and form a film. The Quantum Yield (QY) of the solution at room temperature and after standing for 30 days was tested by an integrating sphere (Edinburgh-FS 5) of a fluorescence spectrometer, wherein the range of the QY values was 80-90% and 77-85%, respectively; testing the absorbance of the CdZnSeS/ZnS solution (the concentration is 15mg/ml) at 700nm through an ultraviolet visible fluorescence spectrum, wherein the range of the absorbance value is 0.09-0.16, and the leveling rate of the CdZnSeS/ZnS core-shell quantum dots is 72-90% through AFM testing.

Example 3

A quantum dot post-processing method comprises the following steps:

1. the oil-soluble red CdSe/ZnSe quantum dots are prepared as follows

12) Preparation of selenium (Se) precursor one:

13) Preparing a second sulfur (S-TOP) precursor:

14) Heating cadmium oleate { Cd (OA)2} and zinc oleate { Zn (OA)2} precursors in the step 11) to 300 ℃, extracting 2ml of selenium (Se) precursors in the step 12), adding the selenium (Se) precursors into a three-necked bottle, reacting for 10min to obtain CdSe/ZnSe quantum dots, cooling to room temperature after the reaction is stopped, adding toluene and methanol, centrifugally separating, cleaning and drying to obtain red CdSe/ZnSe quantum dots, and dispersing the red CdSe/ZnSe quantum dots in n-hexane.

Treatment of CdSe/ZnSe Quantum dots

Taking 2ml of CdSe/ZnSe quantum dots well dispersed in n-hexane in the step 1), adding the CdSe/ZnSe quantum dots into 10ml of octadecylene solution, firstly heating the CdSe quantum dot solution to 150 ℃, exhausting gas for 20min to remove the redundant n-hexane solution in the solution, and then raising the temperature of the CdSe solution to 300 ℃.

3. Post-treating CdSe/ZnSe quantum dots by using a first compound (trioctylphosphine), a second compound (oleic acid) and a third compound (oleylamine)

31) Curing CdSe/ZnSe quantum dots with TOP: adding 1ml of TOP into the CdSe/ZnSe quantum dots in the step 2), and heating and curing at the temperature of 310 ℃ for 60 min.

32) After the TOP aging was completed, 1ml of OA was added dropwise to the mixture and the TOP-aged CdSe/ZnSe quantum dots were heated and aged at 310 ℃ for 40 min.

33) After the completion of the OA aging, 1ml of oleylamine was added to the mixture and the OA-aged CdSe/ZnSe quantum dots were heated and aged at 310 ℃ for 40 min.

34) And after the post-treatment process is finished, cooling the prepared CdSe/ZnSe quantum dot solution to room temperature.

And 4, purifying the CdSe/ZnSe quantum dots.

Adding a proper amount of ethyl acetate and ethanol into the quantum dot mixed solution obtained in the step 3) to carry out centrifugal separation on the CdSe/ZnSe quantum dot solution, dispersing the CdSe/ZnSe quantum dot solution obtained by the centrifugal separation into a proper amount of chloroform solution again to disperse the chloroform solution, then adding acetone and methanol into the solution to carry out precipitation centrifugal separation, and repeating the step once; and finally, carrying out vacuum drying on the obtained CdSe/ZnSe quantum dots.

The CdSe/ZnSe quantum dot prepared by the embodiment of the invention not only can improve the solubility and stability of the CdSe/ZnSe quantum dot, but also can further improve the fluorescence intensity of the quantum dot and form a film. The Quantum Yield (QY) of the solution at room temperature and after standing for 30 days was tested by an integrating sphere (Edinburgh-FS 5) of a fluorescence spectrometer, wherein the range of the QY values was 81-92% and 78-84%, respectively; testing the absorbance of the CdSe/ZnSe solution (with the concentration of 15mg/ml) under 700nm through an ultraviolet visible fluorescence spectrum, wherein the range of the absorbance value is 0.085-0.16, and testing the flatness of the CdSe/ZnSe core-shell quantum dots to be 73-90% through AFM.

Example 4

A quantum dot post-processing method comprises the following steps:

1. the oil-soluble red CdZnS/ZnS quantum dot is prepared as follows:

in a three-neck flask, 1mmol of cadmium oxide (CdO) and zinc acetate { Zn (Ac)₂8mmol, Oleic Acid (OA)8ml, eighteen15ml of alkene (ODE) is firstly vacuumized for 30mins at normal temperature, heated to 180 ℃ and then vacuumized for 30mins at 180 ℃ and cooled to room temperature for later use.

12) Preparation of selenium (Se) precursor one:

13) Preparing a second sulfur (S-TOP) precursor:

14) Cadmium oleate { Cd (OA) in the step 11)₂} and zinc oleate { Zn (OA)₂Heating the precursor to 300 ℃, extracting 4ml of sulfur (S) precursor in the step 12), adding the sulfur (S) precursor into a three-necked bottle, reacting for 10min to prepare CdZnS/ZnS quantum dots, stopping the reaction, cooling to room temperature, adding toluene and methanol, carrying out centrifugal separation, cleaning and drying to obtain red CdZnS/ZnS quantum dots, and dispersing the red CdZnS/ZnS quantum dots in n-hexane.

Treatment of CdZnS/ZnS quantum dots

Adding 2ml of the CdSn/ZnS quantum dots dispersed in n-hexane prepared in the step 1) into 10ml of octadecene solution, firstly heating the CdSe quantum dot solution to 150 ℃, exhausting gas for 20min to remove the redundant n-hexane solution in the solution, and then raising the temperature of the CdSe solution to 300 ℃.

3. Post-processing CdZnS/ZnS quantum dots by utilizing first compound (trioctylphosphine), second compound (oleic acid) and third compound combination (oleylamine + trioctylphosphine)

31) Curing the CdZnS/ZnS quantum dots by using TOP: adding 1ml of TOP into the CdZnS/ZnS quantum dots in the step 2), and heating and curing at the temperature of 310 ℃ for 60 min.

32) After the TOP curing is finished, adding 1ml of OA into the mixed solution, and dropwise adding the OA into the TOP cured CdZnS/ZnS quantum dots, and heating and curing the mixture for 40min at the temperature of 310 ℃.

33) After the completion of OA ripening, 0.5ml of oleylamine and 0.5ml of TOP were added to the mixture and the mixture was heated and ripened at 310 ℃ for 40min in the OA-ripened CdZnS/ZnS quantum dots.

34) And after the post-treatment process is finished, cooling the prepared CdZnS/ZnS quantum dot solution to room temperature.

The CdSe/ZnSe quantum dot prepared by the embodiment of the invention not only can improve the solubility and stability of the CdSe/ZnSe quantum dot, but also can further improve the fluorescence intensity of the quantum dot and form a film. The Quantum Yield (QY) of the solution at room temperature and after standing for 30 days was tested by an integrating sphere (Edinburgh-FS 5) of a fluorescence spectrometer, wherein the range of the QY values was 81-92% and 79-83%, respectively; testing the absorbance of the CdSe/ZnSe solution (with the concentration of 15mg/ml) under 700nm through an ultraviolet visible fluorescence spectrum, wherein the range of the absorbance value is 0.085-0.13, and testing the flatness of the CdSe/ZnSe core-shell quantum dots to be 75-91% through AFM.

Example 5

A quantum dot post-processing method comprises the following steps:

1. preparation of indium phosphide (InP) quantum dots

11) Preparing an indium precursor: 0.25mmol of in (Ac)₃0.5mmol of oleic acid, 10ml of octadecane were added together to a 50ml three-necked flask, heated to 250 ℃ to dissolve it and kept at this temperature to give a clear and transparent solution.

12) Preparation of a P precursor: 0.5mmol of TMSP source solution was dispersed in 2ml of octadecane and stirred at room temperature until clear.

13) Preparation of InP quantum dots: injecting all the P sources in the step 12) into the reaction for 30s, then injecting 10ml of octadecyl diluted quenching reaction, cooling to room temperature, and washing.

14) And (3) cleaning and purifying InP quantum dots: 30ml of acetone was added to the quantum dot mixture solution to centrifugally separate the quantum dots, and the centrifugally separated InP quantum dots were dispersed in 10ml of n-hexane for later use.

2. Treatment of indium phosphide (InP) quantum dots

Adding 2ml of InP quantum dots which are well dispersed in n-hexane and prepared in the step 1) into 10ml of octadecyl solution, firstly heating the InP quantum dot solution to 150 ℃, exhausting gas for 20min to remove redundant n-hexane solution in the solution, and then raising the temperature of the InP solution to 300 ℃.

3. Post-treatment of InP quantum dots with first compound (oleylamine), second compound (trioctylphosphine), third compound (oleic acid)

31) Curing the InP core-shell quantum dots by using OAm: 1ml of OAm was added to the InP quantum dots in step 2) and heated at 310 ℃ for 60 min.

32) After the completion of the aging at OAm, 1ml of TOP was added dropwise to the mixture and the obtained OAm aged InP quantum dots were heated and aged at 310 ℃ for 40 min.

33) After the TOP aging treatment was completed, 1ml of OA was added dropwise to the mixture and the OA-aged InP quantum dots were heated and aged at 310 ℃ for 40 min.

34) And after the post-treatment process is finished, cooling the prepared InP quantum dot solution to room temperature.

And 4, purifying the InP quantum dots.

Adding a proper amount of ethyl acetate and ethanol into the quantum dot mixed solution obtained in the step 3) to carry out centrifugal separation on the InP quantum dot solution, dispersing the InP quantum dot solution obtained by centrifugation into a proper amount of chloroform solution again to disperse the InP quantum dot solution, then adding acetone and methanol into the solution to carry out precipitation and centrifugal separation, and repeating the step once; and finally, carrying out vacuum drying on the obtained InP quantum dots.

The InP quantum dots prepared by the embodiment of the invention not only can improve the solubility and stability of the InP quantum dots, but also can further improve the transient fluorescence lifetime and size uniformity of the quantum dots. Testing the Quantum Yield (QY) and the transient fluorescence lifetime of the solution after the solution is placed for 30 days by an integrating sphere (Edinburgh-FS 5) of a fluorescence spectrometer, wherein the range of the QY value is 38-50%, and the lifetime value is 25-30 ns; InP solution (concentration 15mg/ml) has an absorbance at 700nm, wherein the absorbance value ranges from 0.085 to 0.17, and the size dispersion rate of InP quantum dots is measured by a scanning transmission electron microscope, wherein the dispersion rate value ranges from 3 to 10%.

Example 6

A quantum dot post-processing method comprises the following steps:

1. preparation of gallium phosphide (GaP) quantum dot

11) Preparing an indium precursor: 0.25mmol of Ga (Ac)₃0.5mmol of oleic acid, 10ml of octadecane were added together to a 50ml three-necked flask, heated to 250 ℃ to dissolve it and kept at this temperature to give a clear and transparent solution.

13) Preparing GaP quantum dots: injecting all the P sources in the step 12) into the reaction for 30s, then injecting 10ml of octadecyl diluted quenching reaction, cooling to room temperature, and washing.

14) Cleaning and purifying GaP quantum dots: 30ml of acetone was added to the quantum dot mixture solution to centrifugally separate the quantum dots, and the centrifugally separated InP quantum dots were dispersed in 10ml of n-hexane for later use.

2. Treatment of gallium phosphide (GaP) quantum dots

Taking 2ml of GaP quantum dots dispersed in n-hexane prepared in the step 1), adding the GaP quantum dots into 10ml of octadecene solution, firstly heating the GaP quantum dot solution to 150 ℃, exhausting the gas by 20mGa to remove the redundant n-hexane solution in the solution, and then raising the temperature of the GaP solution to 300 ℃.

3. And (3) carrying out post-treatment on the GaP core-shell quantum dots by using a first compound (oleylamine), a second compound (oleic acid) and a third compound (trioctylphosphine).

31) Curing the GaP core-shell quantum dots by OAm: 1ml of OAm was added to the GaP quantum dots in step 2) and heated at 310 ℃ for 60 min.

32) After the completion of OAm ripening, 1ml of OA was added dropwise to the mixed solution and the resulting mixture was heated at 310 ℃ to digest 40mGa in the above-mentioned OAm-digested GaP quantum dots.

33) After the completion of the OA-ripening treatment, 1ml of TOP was added dropwise to the mixture and the OA-ripened GaP quantum dots were heated and ripened at 310 ℃ for 40 min.

34) And cooling the prepared GaP quantum dot solution to room temperature after the post-treatment process is finished.

And 4, purifying the GaP quantum dots.

Adding a proper amount of ethyl acetate and ethanol into the mixed solution of the quantum dots obtained in the step 3) to carry out centrifugal separation on the GaP quantum dot solution, dispersing the GaP quantum dot solution obtained by centrifugation into a proper amount of chloroform solution again to disperse the solution, then adding acetone and methanol into the solution to carry out precipitation and centrifugal separation, and repeating the step once; and finally, drying the obtained GaP quantum dots in vacuum.

The GaP quantum dot prepared by the embodiment of the invention not only can improve the solubility and stability of the GaP quantum dot, but also can further improve the transient fluorescence lifetime and size uniformity of the quantum dot. Testing the Quantum Yield (QY) and the transient fluorescence lifetime of the solution after the solution is placed for 30 days by an integrating sphere (Edinburgh-FS 5) of a fluorescence spectrometer, wherein the range of the QY value is 36-42%, and the lifetime value is 25-30 ns; testing the absorbance of the GaP solution (with the concentration of 15mg/ml) under 700nm through an ultraviolet visible fluorescence spectrum, wherein the range of the absorbance value is 0.083-0.17, and testing the size dispersion rate of the InP quantum dots through a scanning transmission electron microscope, wherein the range of the dispersion rate value is 3-9%.

Example 7

A quantum dot post-processing method comprises the following steps:

11. preparation of indium phosphide (InP) quantum dots

2. Treatment of indium phosphide (InP) quantum dots

3. And (3) carrying out post-treatment on the InP quantum dots by using the first compound combination (oleylamine + trioctylphosphine), the second compound (trioctylphosphine) and the third compound (oleic acid).

31) Curing the InP core-shell quantum dots by using OAm + TOP: 0.5ml of OAm and 0.5ml of TOP were added to the InP quantum dots in step 2) and heated at 310 ℃ for 60 min.

32) After the completion of the OAm and TOP ripening, 1ml of TOP was added dropwise to the mixture and the OAm and TOP ripened InP core-shell quantum dots were heated and ripened at 310 ℃ for 40 min.

And 4, purifying the InP core-shell quantum dots.

The InP quantum dots prepared by the embodiment of the invention not only can improve the solubility and stability of the InP quantum dots, but also can further improve the transient fluorescence lifetime and size uniformity of the quantum dots. Testing the Quantum Yield (QY) and the transient fluorescence lifetime of the solution after the solution is placed for 30 days by an integrating sphere (Edinburgh-FS 5) of a fluorescence spectrometer, wherein the range of the QY value is 40-45%, and the lifetime value is 26-32 ns; and testing the InP solution (with the concentration of 15mg/ml) by using an ultraviolet visible fluorescence spectrum, wherein the absorbance value ranges from 0.06 to 0.1, and the size dispersion rate of the InP quantum dots is tested by using a scanning transmission electron microscope, and the dispersion rate value ranges from 3 to 10%.

Example 8

A quantum dot post-processing method comprises the following steps:

1. preparation of lead sulfide (PbS) quantum dots

11) Preparing a lead precursor: 0.25mmol of Pb (Ac)₂0.5mmol of oleic acid, 10ml of octadecane were added together to a 50ml three-necked flask, heated to 250 ℃ to dissolve it and kept at this temperature to give a clear and transparent solution.

12) S precursor preparation: taking 0.5mmol (TMS)₂The S source solution is dispersed in 2ml of octadecane and stirred at room temperature until the solution is clear for later use.

13) Preparing PbS quantum dots: injecting all S sources in the step 12) into the reaction for 30S, then injecting 10ml of octadecyl diluted quenching reaction, cooling to room temperature, and washing.

14) Cleaning and purifying PbS quantum dots: 30ml of acetone was added to the quantum dot mixture solution to centrifugally separate the quantum dots, and the centrifugally separated PbS quantum dots were dispersed in 10ml of n-hexane for later use.

2. Treatment of lead sulfide (PbS) quantum dots

Adding 2ml of the PbS quantum dots dispersed in n-hexane prepared in the step 1) into 10ml of octadecane solution, firstly heating the PbS quantum dot solution to 150 ℃, exhausting gas for 20min to remove redundant n-hexane solution in the solution, and then raising the temperature of the PbS solution to 300 ℃.

3. And (3) post-treating the PbS quantum dots by using a first compound (TOP), a second compound (OA) and a third compound (OAm).

31) Aging the PbS core-shell quantum dots by using TOP: 1ml of TOP was added to the PbS quantum dots in step 2) and heated to cure at 310 ℃ for 60 min.

32) After the completion of TOP aging, 1ml of OA was added dropwise to the mixture and the TOP-aged PbS quantum dots were heated and aged at 310 ℃ for 40 min.

33) After completion of the OA-ripening treatment, 1ml of OAm was added dropwise to the mixed solution, and the OA-ripened PbS quantum dots were heated and ripened at 110 ℃ for 40 min.

34) And after the post-treatment process is finished, cooling the prepared PbS quantum dot solution to room temperature.

And 4, purifying the PbS quantum dots.

Adding a proper amount of ethyl acetate and ethanol into the quantum dot mixed solution obtained in the step 3) to carry out centrifugal separation on the PbS quantum dot solution, dispersing the PbS quantum dot solution obtained by centrifugation into a proper amount of chloroform solution again to disperse the PbS quantum dot solution, then adding acetone and methanol into the solution to carry out precipitation and centrifugal separation, and repeating the step once; and finally, drying the PbS quantum dots in vacuum.

The PbS quantum dot prepared by the embodiment of the invention not only can improve the solubility and stability of the PbS quantum dot, but also can further improve the fluorescence intensity and device stability of the quantum dot. The Quantum Yield (QY) of the solution at room temperature and after standing for 30 days was tested by an integrating sphere (Edinburgh-FS 5) of a fluorescence spectrometer, wherein the QY values ranged from 70-86% and 68-71%, respectively; testing the absorbance of a PbS solution (with the concentration of 15mg/ml) at 700nm by ultraviolet visible fluorescence spectroscopy, wherein the absorbance value ranges from 0.06 to 0.1, and testing the attenuation rate of the device efficiency of the PbS near-infrared QLED device after 1 day and 10 by a QLED testing system, wherein the attenuation rate ranges from 10 to 30%.

Example 9

A quantum dot post-processing method comprises the following steps:

1. preparation of lead sulfide (PbSe) quantum dots

12) Preparation of Se precursor: taking 0.5mmol of (TMSe)₂The Se source solution is dispersed in 2ml of octadecyl solution and stirred at room temperature until the solution is clear for later use.

13) Preparing PbSe quantum dots: injecting all Se sources in the step 12) into reaction 30Se, then injecting 10ml of octadecyl diluted quenching reaction, cooling to room temperature, and cleaning.

14) Cleaning and purifying PbSe quantum dots: 30ml of acetone is added to the quantum dot mixed solution to centrifugally separate the quantum dots, and the centrifugally separated PbSe quantum dots are dispersed in 10ml of n-hexane for later use.

2. Treatment of lead sulfide (PbSe) quantum dots

Adding 2ml of PbSe quantum dots which are well dispersed in n-hexane and prepared in the step 1) into 10ml of octadecyl solution, firstly heating the PbSe quantum dot solution to 150 ℃, exhausting gas for 20min to remove redundant n-hexane solution in the solution, and then raising the temperature of the PbSe solution to 300 ℃.

3. And (3) post-treating the PbSe core-shell quantum dots by using a first compound (TOP), a second compound (OAm) and a third compound (OA).

31) Curing the PbSe core-shell quantum dots by using TOP: adding 1ml of TOP into the PbSe quantum dots in the step 2), and heating and curing at the temperature of 310 ℃ for 60 min.

32) After the completion of TOP ripening, 1ml of OAm was added dropwise to the mixture and the TOP-ripened PbSe core-shell quantum dots were heated and ripened at 310 ℃ for 40 min.

33) After the aging treatment of OAm was completed, 1ml of OA was added dropwise to the mixed solution and the OAm aged PbSe core-shell quantum dots were heated and aged at 110 ℃ for 40 min.

34) And cooling the prepared PbSe quantum dot solution to room temperature after the post-treatment process is finished.

And 4, purifying the PbSe nuclear shell quantum dots.

Adding a proper amount of ethyl acetate and ethanol into the quantum dot mixed solution obtained in the step 3) to carry out centrifugal separation on the PbSe quantum dot solution, dispersing the PbSe quantum dot solution obtained by centrifugation into a proper amount of chloroform solution again to disperse the PbSe quantum dot solution, then adding acetone and methanol into the solution to carry out precipitation and centrifugal separation, and repeating the step once; and finally, drying the PbSe quantum dots in vacuum.

The PbSe quantum dot prepared by the embodiment of the invention not only can improve the solubility and stability of the PbSe quantum dot, but also can further improve the fluorescence intensity and device stability of the quantum dot. The Quantum Yield (QY) of the solution at room temperature and after standing for 30 days was tested by an integrating sphere (Edinburgh-FS 5) of a fluorescence spectrometer, wherein the QY values ranged from 32-52% and 35-45%, respectively; testing the absorbance of PbSe solution (with the concentration of 15mg/ml) at 700nm by ultraviolet visible fluorescence spectroscopy, wherein the absorbance value ranges from 0.06 to 0.11, and testing the attenuation rate of the device efficiency of the PbSe near-infrared QLED device after 1 day and 10 by a QLED testing system, wherein the attenuation rate ranges from 15 to 36%.

Example 10

A quantum dot post-processing method comprises the following steps:

1. preparation of lead sulfide (PbS) quantum dots

2. Treatment of lead sulfide (PbS) quantum dots

3. And (3) post-treating the PbS quantum dots by using a first compound (TOP), a second compound (OA) and a third compound combination (OAm and TOP).

33) After completion of the OA-ripening treatment, 0.5ml of OAm and 0.5ml of TOP were added dropwise to the mixture, and the OA-ripened PbS quantum dots were heated and ripened at 110 ℃ for 40 min.

And 4, purifying the PbS quantum dots.

The PbS quantum dot prepared by the embodiment of the invention not only can improve the solubility and stability of the PbS quantum dot, but also can further improve the fluorescence intensity and device stability of the quantum dot. The Quantum Yield (QY) of the solution at room temperature and after standing for 30 days was tested by an integrating sphere (Edinburgh-FS 5) of a fluorescence spectrometer, wherein the range of the QY values was 75-80% and 72-82%, respectively; testing the absorbance of a PbS solution (with the concentration of 15mg/ml) at 700nm by ultraviolet visible fluorescence spectroscopy, wherein the absorbance value ranges from 0.06 to 0.11, and testing the attenuation rate of the device efficiency of the PbS near-infrared QLED device after 1 day and 10 by a QLED testing system, wherein the attenuation rate ranges from 15 to 36%.

Example 11

A quantum dot post-processing method comprises the following steps:

1. preparation of copper indium selenium sulfur (CuInSeS) quantum dots

11) Preparing a cadmium precursor: 0.25mmol of Cu (Ac))₂0.3mmol of in (Ac)₃3ml of oleic acid and 20ml of octadecane were added together to a 50ml three-necked flask and heated to 300 ℃ to dissolve it and to maintain it at this temperature as a clear and transparent solution.

12) Preparation of Se and S precursors: 0.5mmol of Se powder and 1mmol of S powder were taken and dispersed together in 3ml of trioctylphosphine.

13) Preparing the CuInSeS quantum dots: injecting all Se and S sources in the step 12) for reaction for 10min, then injecting 10ml of octadecyl diluted quenching reaction, cooling to room temperature, and cleaning.

14) Cleaning and purifying the CuInSeS quantum dots: 30ml of acetone was added to the quantum dot mixture solution to centrifugally separate the quantum dots, and the centrifugally separated CuInSeS quantum dots were dispersed in 10ml of n-hexane for later use.

2. Treatment of copper indium selenium sulfide (CuInSeS) quantum dots

Adding 2ml of CuInSeS quantum dots dispersed in n-hexane prepared in the step 1) into 10ml of octadecene solution, firstly heating the CuInSeS quantum dot solution to 150 ℃, exhausting gas for 20min to remove redundant n-hexane solution in the solution, and then raising the temperature of the CuInSeS solution to 300 ℃.

3. Carrying out post-treatment on the CuInSeS quantum dots by using a first compound (oleic acid), a second compound (trioctylphosphine) and a third compound (oleylamine)

31) Curing CuInSeS quantum dots with OA: adding 1ml of oleic acid into the CuInSeS quantum dots in the step 2), and heating and curing at the temperature of 310 ℃ for 60 min.

32) After the completion of the OA-ripening, 1ml of TOP was added dropwise to the mixture and the OA-ripened CuInSeS quantum dots were heated and ripened at 310 ℃ for 40 min.

33) After completion of the TOP ripening, 1ml of OAm was added to the mixture and the TOP-ripened CuInSeS quantum dots were ripened at 310 ℃ for 40min under heating.

34) And after the post-treatment process is finished, cooling the prepared CuInSeS quantum dot solution to room temperature.

Purification of CuInSeS quantum dots

Adding a proper amount of ethyl acetate and ethanol into the quantum dot mixed solution obtained in the step 3) to carry out centrifugal separation on the CuInSeS quantum dot solution, dispersing the CuInSeS quantum dot solution obtained by centrifugation into a proper amount of chloroform solution again to disperse the CuInSeS quantum dot solution, then adding acetone and methanol into the solution to carry out precipitation and centrifugal separation, and repeating the step once; and finally, carrying out vacuum drying on the obtained CuInSeS quantum dots.

The CuInSeS quantum dot prepared by the embodiment of the invention not only can improve the solubility and stability of the CuInSeS quantum dot, but also can further improve the fluorescence intensity and color purity of the quantum dot. The Quantum Yield (QY) of the solution at room temperature and after standing for 30 days was tested by an integrating sphere (Edinburgh-FS 5) of a fluorescence spectrometer, wherein the range of the QY values was 75-80% and 72-82%, respectively; the absorbance of the CuInSeS solution (with the concentration of 15mg/ml) under 700nm is tested through an ultraviolet visible fluorescence spectrum, wherein the range of the absorbance value is 0.06-0.11, and the reduction range of the half-peak width of the CuInSeS quantum dot is tested through a fluorescence spectrometer (Edinburgh-FS 5) and is 1-5 nm.

Example 12

A quantum dot post-processing method comprises the following steps:

1. preparation of copper indium sulfide (CuInS) quantum dots

11) Preparing a cadmium precursor: 0.25mmol of Cu (Ac)₂0.3mmol of in (Ac)₃3ml of oleic acid and 20ml of octadecane were added together to a 50ml three-necked flask and heated to 300 ℃ to dissolve it and to maintain it at this temperature as a clear and transparent solution.

12) S precursor preparation: 1mmol of S powder was taken and dispersed together in 3ml of trioctylphosphine.

13) Preparing the CuInS quantum dots: injecting all S sources in the step 12) into the reaction kettle for reaction for 10min, then injecting 10ml of octadecyl diluted quenching reaction, cooling to room temperature, and then cleaning.

14) Cleaning and purifying the CuInS quantum dots: 30ml of acetone was added to the quantum dot mixture solution to centrifugally separate the quantum dots, and the centrifugally separated CuInS quantum dots were dispersed in 10ml of n-hexane for later use.

2. Treatment of copper indium sulfide (CuInS) quantum dots

Adding 2ml of CuInS quantum dots dispersed in n-hexane prepared in the step 1) into 10ml of octadecene solution, firstly heating the CuInS quantum dot solution to 150 ℃, exhausting gas for 20min to remove redundant n-hexane solution in the solution, and then raising the temperature of the CuInS solution to 300 ℃.

3. Carrying out post-treatment on the CuInS quantum dots by using a first compound (trioctylphosphine), a second compound (oleic acid) and a third compound (oleylamine)

31) Curing the CuInS quantum dots by using TOP: adding 1ml of TOP into the CuInS quantum dots in the step 2), and heating and curing at the temperature of 310 ℃ for 60 min.

32) After the TOP curing is finished, 1ml of oleic acid is added into the mixed solution and is added into the TOP cured CuInSeS quantum dots to be heated and cured for 40min at the temperature of 310 ℃.

33) After completion of the OA-ripening, 1ml of OAm was added to the mixture, and the OA-ripened CuInS quantum dots were heated and ripened at 310 ℃ for 40 min.

34) And after the post-treatment process is finished, cooling the prepared CuInS quantum dot solution to room temperature.

And 4, purifying the CuInS quantum dots.

Adding a proper amount of ethyl acetate and ethanol into the quantum dot mixed solution obtained in the step 3) to carry out centrifugal separation on the CuInS quantum dot solution, dispersing the CuInS quantum dot solution obtained by centrifugation into a proper amount of chloroform solution again to disperse the CuInS quantum dot solution, then adding acetone and methanol into the solution to carry out precipitation and centrifugal separation, and repeating the step once; and finally, carrying out vacuum drying on the obtained CuInS quantum dots.

The CuInS quantum dot prepared by the embodiment of the invention not only can improve the solubility and stability of the CuInS quantum dot, but also can further improve the fluorescence intensity and color purity of the quantum dot. The Quantum Yield (QY) of the solution at room temperature and after standing for 30 days was tested by an integrating sphere (Edinburgh-FS 5) of a fluorescence spectrometer, wherein the QY values ranged from 74-84% and 72-82%, respectively; testing the absorbance of the CuInS solution (with the concentration of 15mg/ml) at 700nm by an ultraviolet visible fluorescence spectrum, wherein the absorbance value range is 0.06-0.11, and testing the reduction range of the half-peak width of the CuInS quantum dot by a fluorescence spectrometer (Edinburgh-FS 5) to be 1-6 nm.

Example 13

A quantum dot post-processing method comprises the following steps:

1. preparation of copper indium selenium sulfur (CuInSeS) quantum dots

2. Treatment of copper indium selenium sulfide (CuInSeS) quantum dots

3. Post-treating the CuInSeS quantum dots with a first compound (oleic acid), a second compound (trioctylphosphine), and a third compound combination (oleylamine and trioctylphosphine)

33) After completion of TOP ripening, 0.5ml of OAm and 0.5ml of TOP were added to the mixture and the TOP-ripened CuInSeS quantum dots were then ripened at 310 ℃ for 40min under heating.

And 4, purifying the CuInSeS quantum dots.

The CuInSeS quantum dot prepared by the embodiment of the invention not only can improve the solubility and stability of the CuInSeS quantum dot, but also can further improve the fluorescence intensity and color purity of the quantum dot. The Quantum Yield (QY) of the solution at room temperature and after standing for 30 days was tested by an integrating sphere (Edinburgh-FS 5) of a fluorescence spectrometer, wherein the QY values ranged from 75-85% and 73-83%, respectively; the absorbance of the CuInSeS solution (with the concentration of 15mg/ml) under 700nm is tested through an ultraviolet visible fluorescence spectrum, wherein the range of the absorbance value is 0.05-0.10, and the reduction range of the half-peak width of the CuInSeS quantum dot is tested through a fluorescence spectrometer (Edinburgh-FS 5) and is 1-6 nm.

Example 14

A quantum dot post-processing method comprises the following steps:

1.CsPbBr₃preparation of quantum dots

11) Preparation of cesium oleate { cs (oa) } stock solution:

0.814g of cesium carbonate { Cs ] was weighed₂CO₃Add to a 100ml three-necked flask, then add to the flask 30ml Octadecene (ODE) and 2.5ml Oleic Acid (OA); exhausting at room temperature for 20min under inert gas, heating to 120 deg.C, exhausting for 60min, heating to 160 deg.C to remove all cesium carbonate { Cs }₂CO₃All reacted with oleic acid, and then the solution temperature was maintained at 160 ℃ to avoid the solidification of the cesium oleate { Cs (OA) } solution.

12) Preparation of CsPbBr₃Quantum dot:

50ml of Octadecene (ODE), 5ml of oleylamine (OAm) and 0.7g of lead bromide (PbBr) were taken₂₎Adding the mixture into a 100ml three-neck flask, exhausting gas at normal temperature for 20min under inert gas, heating to 120 ℃, exhausting gas for 30min, heating the mixed solution to 180 ℃, quickly injecting 0.04mmol of cesium oleate { Cs (OA) } stock solution into the mixed solution, reacting for 10s, and quickly transferring the reaction mixed solution into an ice-water bath. The cooled mixture was subjected to high speed centrifugation using toluene and methanol to precipitate and the final sample was dispersed in toluene to prepare a 15mg/ml solution.

13) Post-treatment CsPbBr₃Quantum dot:

taking 1ml of CsPbBr prepared in the step 12)₃Adding 50 microliters of Oleic Acid (OA) into the quantum dot solution, stirring for 30min, then adding 100 microliters of a didodecyldimethylammonium chloride (DDAB) solution containing 0.05mmol, stirring for 30min, then carrying out centrifugal separation on the mixed solution by using butanol, precipitating, separating, and then dispersing into n-hexane.

2.CsPbBr₃Treatment of quantum dots

Taking CsPbBr which is prepared in the step 1) and dispersed in n-hexane₃2ml of quantum dots are added into 10ml of octadecene solution, and CsPbBr is firstly added₃Heating the quantum dot solution to 150 ℃, exhausting gas for 20min to remove redundant n-hexane solution in the solution, and then adding CsPbBr₃The temperature of the quantum dot solution is raised to 300 DEG C

3. CsPbBr was treated with the first compound (OAm), the second compound (OA), and the third compound (TOP) as examples₃Post-processing of quantum dots

31) Using OAm pairs CsPbBr₃Curing the quantum dots: 1ml of OAm was added to CsPbBr in step 2)₃Heating and curing the quantum dots at 150 ℃ for 60 min.

32) After the completion of the aging at OAm, 1ml of OA was added dropwise to the mixed solution, and CsPbBr obtained by the above aging at OAm was added dropwise₃Heating and curing the quantum dots at the temperature of 150 ℃ for 40 min.

33)After completion of the OA-ripening, 1ml of TOP was added to the mixture to the OA-ripened CsPbBr₃Heating and curing the quantum dots at the temperature of 150 ℃ for 40 min.

34) After the post-treatment process is finished, the prepared CsPbBr is₃And cooling the quantum dot solution to room temperature.

4.CsPbBr₃And (5) purifying the quantum dots.

Adding a proper amount of ethyl acetate and ethanol to the quantum dot mixed solution obtained in the step 3) to CsPbBr₃Centrifuging the quantum dot solution to obtain CsPbBr₃Dispersing the quantum dot solution in a proper amount of chloroform solution again to disperse the quantum dot solution, then adding acetone and methanol into the solution to perform precipitation and centrifugal separation, and repeating the step once; finally obtained CsPbBr₃And (5) carrying out vacuum drying on the quantum dots.

CsPbBr prepared by embodiment of the invention₃Quantum dots capable of improving CsPbBr₃The solubility and stability of the quantum dots, and the fluorescence intensity and transient fluorescence lifetime of the quantum dots can be further improved. The Quantum Yield (QY) of the solution at room temperature and after standing for 30 days was tested by an integrating sphere (Edinburgh-FS 5) of a fluorescence spectrometer, wherein the QY values ranged from 75-85% and 73-82%, respectively; the absorbance of the CsPbBr3 solution (with the concentration of 15mg/ml) under 700nm is tested through an ultraviolet visible fluorescence spectrum, wherein the range of the absorbance value is 0.05-0.10, and the transient life of the CsPbBr3 quantum dots is tested through the transient fluorescence spectrum of a fluorescence spectrometer (Edinburgh-FS 5), and the life value is 25-30 ns.

Example 15

A quantum dot post-processing method comprises the following steps:

1.CsPbBr₃preparation of quantum dots

11) Preparation of cesium oleate { cs (oa) } stock solution:

12) Preparation of CsPbBr₃Quantum dot:

50ml of Octadecene (ODE), 5ml of oleylamine (OAm) and 0.7g of lead bromide (PbBr) were taken₂) Adding the mixture into a 100ml three-neck flask, exhausting gas at normal temperature for 20min under inert gas, heating to 120 ℃, exhausting gas for 30min, heating the mixed solution to 180 ℃, quickly injecting 0.04mmol of cesium oleate { Cs (OA) } stock solution into the mixed solution, reacting for 10s, and quickly transferring the reaction mixed solution into an ice-water bath. The cooled mixture was subjected to high speed centrifugation using toluene and methanol to precipitate and the final sample was dispersed in toluene to prepare a 15mg/ml solution.

13) Post-treatment CsPbBr₃Quantum dot:

2.CsPbBr₃Treatment of quantum dots

3. CsPbBr was treated with the first compound (OAm), the second compound (TOP), and the third compound (OA) as examples₃Post-processing of quantum dots

32) After the aging of OAm was completed, 1ml of the mixture was addedWas added dropwise to the OAm-matured CsPbBr₃Heating and curing the quantum dots at the temperature of 150 ℃ for 40 min.

33) After completion of TOP maturation, 1ml of OA was added to the mixture to the TOP-matured CsPbBr₃Heating and curing the quantum dots at 1500 ℃ for 40 min.

4.CsPbBr₃Purification of quantum dots

CsPbBr prepared by embodiment of the invention₃Quantum dots capable of improving CsPbBr₃The solubility and stability of the quantum dots, and the fluorescence intensity and transient fluorescence lifetime of the quantum dots can be further improved. The Quantum Yield (QY) of the solution at room temperature and after standing for 30 days was tested by an integrating sphere (Edinburgh-FS 5) of a fluorescence spectrometer, wherein the QY values ranged from 75-85% and 72-83%, respectively; CsPbBr measurement by UV-visible fluorescence spectroscopy₃The absorbance of the solution (the concentration is 15mg/ml) at 700nm, wherein the range of the absorbance value is 0.06-0.10, and the transient life of the CsPbBr3 quantum dot is tested by a transient fluorescence spectrum of a fluorescence spectrometer (Edinburgh-FS 5), and the life value is 25-30 ns.

Example 16

A quantum dot post-processing method comprises the following steps:

1.CsPbBr₃preparation of quantum dots

11) Preparation of cesium oleate { cs (oa) } stock solution:

0.814g of cesium carbonate { Cs ] was weighed₂CO₃Add to a 100ml three-necked flask, then add 30ml eighteen-necked flaskAlkene (ODE) and 2.5ml of Oleic Acid (OA); exhausting at room temperature for 20min under inert gas, heating to 120 deg.C, exhausting for 60min, heating to 160 deg.C to remove all cesium carbonate { Cs }₂CO₃All reacted with oleic acid, and then the solution temperature was maintained at 160 ℃ to avoid the solidification of the cesium oleate { Cs (OA) } solution.

12) Preparation of CsPbBr₃Quantum dot:

13) Post-treatment CsPbBr₃Quantum dot:

2.CsPbBr₃Treatment of quantum dots

3. CsPbBr was treated with the first compound (TOP), the second compound (OAm), and the third compound (OA and TOP) as examples₃Post-processing of quantum dots

31) Using TOP to CsPbBr₃Curing the quantum dots: add 1ml of TOP to step 2)CsPbBr in (III)₃Heating and curing the quantum dots at 150 ℃ for 60 min.

32) After completion of the TOP maturation, 1ml of OAm was added to the mixture and added dropwise to the TOP-matured CsPbBr₃Heating and curing the quantum dots at the temperature of 150 ℃ for 40 min.

33) After the completion of the aging at OAm, 0.5ml of TOP and 0.5ml of OA were added to the mixed solution to OAm-aged CsPbBr₃Heating and curing the quantum dots at the temperature of 150 ℃ for 40 min.

34) And after the post-treatment process is finished, cooling the prepared CsPbBr3 quantum dot solution to room temperature.

4.CsPbBr₃Purification of quantum dots

CsPbBr prepared by embodiment of the invention₃Quantum dots capable of improving CsPbBr₃The solubility and stability of the quantum dots, and the fluorescence intensity and transient fluorescence lifetime of the quantum dots can be further improved. The Quantum Yield (QY) of the solution at room temperature and after standing for 30 days was tested by an integrating sphere (Edinburgh-FS 5) of a fluorescence spectrometer, wherein the QY values ranged from 75-85% and 73-84%, respectively; CsPbBr measurement by UV-visible fluorescence spectroscopy₃The absorbance of the solution (with the concentration of 15mg/ml) at 700nm is 0.055-0.10, the transient life of the CsPbBr3 quantum dot is tested by the transient fluorescence spectrum of a fluorescence spectrometer (Edinburgh-FS 5), and the life value is 25-30 ns.

The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.

Claims

1. A post-processing method of quantum dots is characterized by comprising the following steps:

providing an initial quantum dot solution;

wherein the first compound is selected from an organic carboxylic acid, an organic amine or an organic phosphine, and the first compound combination is selected from an organic carboxylic acid and an organic phosphine or an organic amine and an organic phosphine; the second compound is selected from organic carboxylic acid, organic amine or organic phosphine, and the second compound combination is selected from organic carboxylic acid and organic phosphine or organic amine and organic phosphine; the third compound is selected from organic carboxylic acid, organic amine or organic phosphine, and the third compound is selected from organic carboxylic acid and organic phosphine or organic amine and organic phosphine;

2. The method of post-treatment of quantum dots according to claim 1, wherein the initial quantum dot solution is subjected to a first sequence of mixing and heating with an organic carboxylic acid to obtain a first quantum dot solution;

mixing and heating the first quantum dot solution and organic amine in a second order or mixing and heating the first quantum dot solution, organic amine and organic phosphine in a second order to obtain a second quantum dot solution;

and mixing and heating the second quantum dot solution and organic phosphine for the third time to obtain a third quantum dot solution.

3. The method of post-treatment of quantum dots according to claim 1, wherein the initial quantum dot solution is subjected to a first sequence of mixing and heating with an organic carboxylic acid to obtain a first quantum dot solution;

mixing the first quantum dot solution and organic phosphine for the second time and heating to obtain a second quantum dot solution;

and mixing and heating the second quantum dot solution and organic amine in a third order or mixing and heating the second quantum dot solution, organic amine and organic phosphine in a third order to obtain a third quantum dot solution.

4. The method of post-treatment of quantum dots according to claim 1, wherein the initial quantum dot solution is subjected to a first sequence of mixing and heating with an organic carboxylic acid and an organic phosphine to obtain a first quantum dot solution;

5. The method of post-treatment of quantum dots according to claim 1, wherein the initial quantum dot solution is subjected to a first sequence of mixing and heating with an organic carboxylic acid and an organic phosphine to obtain a first quantum dot solution;

6. The method for post-treating quantum dots according to claim 1, wherein the initial quantum dot solution and the organic phosphine are mixed and heated for the first time to obtain a first quantum dot solution;

mixing and heating the first quantum dot solution and organic carboxylic acid in a second order or mixing and heating the first quantum dot solution, organic carboxylic acid and organic phosphine in a second order to obtain a second quantum dot solution;

7. The method for post-treating quantum dots according to any one of claims 1 to 6, wherein the step of mixing and heating the sequential quantum dot solution with an organic carboxylic acid or the step of mixing and heating the sequential quantum dot solution with an organic carboxylic acid and an organic phosphine is performed at a temperature of 200 to 350 ℃; and/or the presence of a gas in the gas,

the step of mixing and heating the sequential quantum dot solution and organic amine or the step of mixing and heating the sequential quantum dot solution, organic amine and organic phosphine is carried out at the temperature of 80-200 ℃; and/or the presence of a gas in the gas,

the steps of mixing and heating the quantum dot solution and the organic phosphine in the sequence are carried out at the temperature of 80-350 ℃.

8. The method for post-treating quantum dots according to any of claims 1 to 6, wherein the organic amine is a linear organic amine containing a single amino group, and the number of carbon atoms in the organic amine is 8 to 18; and/or the presence of a gas in the gas,

the organic carboxylic acid is a straight-chain organic carboxylic acid containing a single carboxyl group, and the number of carbon atoms in the organic carboxylic acid is 8-18; and/or the presence of a gas in the gas,

the organic phosphine is one or two of trioctylphosphine and tributylphosphine.

9. The method for post-processing of quantum dots according to any of claims 1 to 6, wherein the organic amine, organic carboxylic acid and organic phosphine molecules are liquid at room temperature.

10. The method for post-treating quantum dots according to any of claims 1 to 6, wherein the sequential quantum dot solutions are combined and heated with a compound combination of an organic carboxylic acid and an organic phosphine, wherein the molar ratio of the organic carboxylic acid to the organic phosphine is (3-7): (7-3); and/or the presence of a gas in the gas,

when the sequential quantum dot solution is combined with a compound of organic amine and organic phosphine, the molar ratio of the organic amine to the organic phosphine is (3-7): (7-3).

11. The method for post-treating quantum dots according to any one of claims 1 to 6, wherein the ratio of the molar ratio of the first compound or the combination of the first compounds to the mass of quantum dots in the initial quantum dot solution is (0.5 to 10 mmol): 100mg, mixing and heating the initial quantum dot solution and a first compound or a first compound combination in a first order to obtain a first quantum dot solution; and/or the presence of a gas in the gas,

according to the mol to mass ratio of the second compound or the second compound combination to the quantum dots in the first quantum dot solution (0.5-10 mmol): 100mg, mixing and heating the first quantum dot solution and a second compound or a second compound combination for a second time sequence to obtain a second quantum dot solution; and/or the presence of a gas in the gas,

according to the mol to mass ratio of the third compound or the third compound combination to the quantum dots in the second quantum dot solution (0.5-10 mmol): and 100mg, mixing and heating the second quantum dot solution and a third compound or a third compound combination in a third sequence to obtain a third quantum dot solution.