CN111377483A - Application of strontium-doped molybdenum sulfide material in self-powered piezoelectricity-enhanced hydrogen production - Google Patents
Application of strontium-doped molybdenum sulfide material in self-powered piezoelectricity-enhanced hydrogen production Download PDFInfo
- Publication number
- CN111377483A CN111377483A CN202010200660.XA CN202010200660A CN111377483A CN 111377483 A CN111377483 A CN 111377483A CN 202010200660 A CN202010200660 A CN 202010200660A CN 111377483 A CN111377483 A CN 111377483A
- Authority
- CN
- China
- Prior art keywords
- solution
- molybdenum sulfide
- strontium
- hydrogen production
- hydrogen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052739 hydrogen Inorganic materials 0.000 title claims abstract description 99
- 239000001257 hydrogen Substances 0.000 title claims abstract description 99
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 title claims abstract description 95
- 239000000463 material Substances 0.000 title claims abstract description 90
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 title claims abstract description 65
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 58
- 238000002360 preparation method Methods 0.000 claims abstract description 16
- 229910001427 strontium ion Inorganic materials 0.000 claims abstract description 7
- 239000000243 solution Substances 0.000 claims description 98
- 238000006243 chemical reaction Methods 0.000 claims description 52
- 238000009210 therapy by ultrasound Methods 0.000 claims description 36
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 32
- 239000008367 deionised water Substances 0.000 claims description 26
- 229910021641 deionized water Inorganic materials 0.000 claims description 26
- 239000011259 mixed solution Substances 0.000 claims description 24
- 239000004065 semiconductor Substances 0.000 claims description 24
- JBANFLSTOJPTFW-UHFFFAOYSA-N azane;boron Chemical compound [B].N JBANFLSTOJPTFW-UHFFFAOYSA-N 0.000 claims description 20
- 229910052961 molybdenite Inorganic materials 0.000 claims description 18
- 229910052982 molybdenum disulfide Inorganic materials 0.000 claims description 18
- 230000001699 photocatalysis Effects 0.000 claims description 18
- UMGDCJDMYOKAJW-UHFFFAOYSA-N thiourea Chemical compound NC(N)=S UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 claims description 18
- 239000012779 reinforcing material Substances 0.000 claims description 15
- 239000007864 aqueous solution Substances 0.000 claims description 10
- 238000002156 mixing Methods 0.000 claims description 10
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Natural products NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 claims description 9
- 235000015393 sodium molybdate Nutrition 0.000 claims description 9
- 239000011684 sodium molybdate Substances 0.000 claims description 9
- TVXXNOYZHKPKGW-UHFFFAOYSA-N sodium molybdate (anhydrous) Chemical compound [Na+].[Na+].[O-][Mo]([O-])(=O)=O TVXXNOYZHKPKGW-UHFFFAOYSA-N 0.000 claims description 9
- 229940047908 strontium chloride hexahydrate Drugs 0.000 claims description 9
- AMGRXJSJSONEEG-UHFFFAOYSA-L strontium dichloride hexahydrate Chemical compound O.O.O.O.O.O.Cl[Sr]Cl AMGRXJSJSONEEG-UHFFFAOYSA-L 0.000 claims description 9
- 238000007789 sealing Methods 0.000 claims description 6
- 230000004044 response Effects 0.000 claims description 5
- 238000005086 pumping Methods 0.000 claims description 4
- 238000001027 hydrothermal synthesis Methods 0.000 claims description 3
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 229910000085 borane Inorganic materials 0.000 abstract description 6
- UORVGPXVDQYIDP-UHFFFAOYSA-N borane Chemical compound B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 abstract description 4
- 239000011232 storage material Substances 0.000 abstract description 4
- 238000003756 stirring Methods 0.000 abstract description 3
- 239000000446 fuel Substances 0.000 abstract description 2
- PTISTKLWEJDJID-UHFFFAOYSA-N sulfanylidenemolybdenum Chemical compound [Mo]=S PTISTKLWEJDJID-UHFFFAOYSA-N 0.000 abstract description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 abstract 2
- 229910021529 ammonia Inorganic materials 0.000 abstract 1
- XLYOFNOQVPJJNP-ZSJDYOACSA-N heavy water Substances [2H]O[2H] XLYOFNOQVPJJNP-ZSJDYOACSA-N 0.000 description 7
- 238000013032 photocatalytic reaction Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 238000001291 vacuum drying Methods 0.000 description 6
- 239000003054 catalyst Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 4
- 238000012512 characterization method Methods 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 238000006555 catalytic reaction Methods 0.000 description 3
- 229910003203 NH3BH3 Inorganic materials 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 150000004678 hydrides Chemical class 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 229910000510 noble metal Inorganic materials 0.000 description 2
- 238000007146 photocatalysis Methods 0.000 description 2
- 238000006303 photolysis reaction Methods 0.000 description 2
- 230000015843 photosynthesis, light reaction Effects 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 229910052712 strontium Inorganic materials 0.000 description 2
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000001917 fluorescence detection Methods 0.000 description 1
- 239000002803 fossil fuel Substances 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- -1 hydrogen Chemical class 0.000 description 1
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 238000003797 solvolysis reaction Methods 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000004627 transmission electron microscopy Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G39/00—Compounds of molybdenum
- C01G39/06—Sulfides
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
- B01J19/10—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing sonic or ultrasonic vibrations
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
- B01J19/12—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electromagnetic waves
- B01J19/122—Incoherent waves
- B01J19/128—Infra-red light
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J27/00—Catalysts comprising the elements or compounds of halogens, sulfur, selenium, tellurium, phosphorus or nitrogen; Catalysts comprising carbon compounds
- B01J27/02—Sulfur, selenium or tellurium; Compounds thereof
- B01J27/04—Sulfides
- B01J27/047—Sulfides with chromium, molybdenum, tungsten or polonium
- B01J27/051—Molybdenum
-
- B01J35/39—
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J37/00—Processes, in general, for preparing catalysts; Processes, in general, for activation of catalysts
- B01J37/08—Heat treatment
- B01J37/10—Heat treatment in the presence of water, e.g. steam
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B3/00—Hydrogen; Gaseous mixtures containing hydrogen; Separation of hydrogen from mixtures containing it; Purification of hydrogen
- C01B3/02—Production of hydrogen or of gaseous mixtures containing a substantial proportion of hydrogen
- C01B3/06—Production of hydrogen or of gaseous mixtures containing a substantial proportion of hydrogen by reaction of inorganic compounds containing electro-positively bound hydrogen, e.g. water, acids, bases, ammonia, with inorganic reducing agents
- C01B3/065—Production of hydrogen or of gaseous mixtures containing a substantial proportion of hydrogen by reaction of inorganic compounds containing electro-positively bound hydrogen, e.g. water, acids, bases, ammonia, with inorganic reducing agents from a hydride
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
- C01P2002/72—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/01—Particle morphology depicted by an image
- C01P2004/04—Particle morphology depicted by an image obtained by TEM, STEM, STM or AFM
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/60—Optical properties, e.g. expressed in CIELAB-values
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/30—Hydrogen technology
- Y02E60/36—Hydrogen production from non-carbon containing sources, e.g. by water electrolysis
Abstract
The invention provides an application of a strontium-doped molybdenum sulfide material in self-powered piezoelectricity-enhanced hydrogen production. The strontium-doped molybdenum sulfide material (Sr-MoS)2) Comprising molybdenum sulphide MoS responsive to near-infrared light2The material and the divalent strontium ions doped in the molybdenum sulfide and on the surface of the molybdenum sulfide. The strontium-doped molybdenum sulfide material provided by the invention can effectively utilize the mechanical energy (such as vibration, noise, ultrasonic wave, stirring and other energy) of the nature, and uses ammonia with the hydrogen content of 19.6 wt%The borane is used as hydrogen storage material to prepare hydrogen energy at normal temperature and normal pressure, and realizes self-powered piezoelectric enhanced hydrogen production. And the hydrogen fuel can be used along with the preparation, thus solving the problem that the hydrogen is difficult to store. The preparation method of the strontium-doped molybdenum sulfide material provided by the invention is simple and feasible, and is green and environment-friendly.
Description
Technical Field
The invention relates to an application of a strontium-doped molybdenum sulfide material in self-powered piezoelectrically enhanced hydrogen production, in particular to an application of the strontium-doped molybdenum sulfide material in photocatalytic self-powered piezoelectrically enhanced hydrogen production, and belongs to the field of new energy.
Background
With the rapid development of human society, people's demand for energy is increasing day by day, and the exhaustion of fossil fuel causes energy shortage. Hydrogen energy is widely concerned by people because of its advantages of high combustion value, no secondary pollution and the like. However, hydrogen is easy to explode, and the cost of compressing hydrogen is high, so how to safely, effectively and economically prepare hydrogen and use hydrogen is a technical problem to be solved by hydrogen energy and hydrogen economy. Ammonia borane (NH)3BH3) The hydrogen storage material is a main hydrogen storage material, has the hydrogen content of 19.6 wt%, is solid at normal temperature and normal pressure, has higher stability, is safe and nontoxic, and is easy to carry. Thus, NH in contrast to gaseous or liquid hydrogen3BH3Is considered a more efficient and safer way of storing hydrogen energy. However, NH3BH3Hydrogen is released very slowly under natural conditions. In order to rapidly release hydrogen, catalysts containing noble metals, such as platinum, palladium, rhodium, gold, etc., have been developed. However, noble metals are expensive and low in abundance, so their applications are very limited. There is a need to develop a new technology that is safe, economical, environmentally friendly, and capable of releasing hydrogen gas efficiently.
The piezoelectric material has the characteristic of converting mechanical energy into electric energy, so that mechanical vibration energy of an automobile in running can be absorbed, and self-powered hydrogen production is realized.
Disclosure of Invention
The invention aims to provide application of a strontium-doped molybdenum sulfide material in self-powered piezoelectricity-enhanced hydrogen production, so as to overcome the defects in the prior art.
In order to achieve the purpose, the technical scheme adopted by the invention comprises the following steps:
the embodiment of the invention provides a strontium-doped molybdenum sulfide piezoelectric reinforcing material (Sr-MoS)2) The application of the material in self-energized piezoelectric enhanced hydrogen production under infrared light irradiation.
Further, the strontium-doped molybdenum sulfide material comprises molybdenum sulfide MoS which is responsive to near infrared light2The material and the divalent strontium ions doped in the molybdenum sulfide and on the surface of the molybdenum sulfide.
Further, the mass of the divalent strontium ions is 10.0 wt% -35.0 wt% of the mass of the molybdenum sulfide material.
Further, the forbidden band width of the strontium-doped molybdenum sulfide material is 0.7eV-1.3 eV.
Further, the strontium-doped molybdenum sulfide MoS2The response range of the semiconductor material to infrared light is 780-1550 nm.
Furthermore, under the condition that the temperature is 20-30 ℃, ultrasonic wave and near infrared light irradiation are simultaneously applied to a hydrogen production reaction system which is mainly formed by mixing a strontium-doped molybdenum sulfide material and ammonia borane aqueous solution, so that the preparation of hydrogen is realized.
Furthermore, the power of the ultrasonic wave is 20-30 KHz.
Further, the strontium-doped molybdenum sulfide material is prepared by a hydrothermal method, and the preparation method comprises the following steps:
(1) dissolving sodium molybdate in deionized water, and carrying out ultrasonic treatment for 30-60mins until the solution A is prepared;
(2) dissolving thiourea in deionized water, and carrying out ultrasonic treatment for 30-60mins until the solution B is prepared;
(3) dissolving strontium chloride hexahydrate in deionized water, and carrying out ultrasonic treatment for 30-60mins until the solution C is prepared;
(4) dropwise adding the solution B and the solution C into the solution A, and carrying out ultrasonic treatment for 30-60mins until the solution B and the solution C are uniformly mixed to obtain a mixed solution D;
(5) transferring the mixed solution D into a high-pressure reaction kettle, and reacting for 20-30h at the temperature of 150-300 ℃ to obtain the strontium-doped molybdenum sulfide material.
Further, the concentration of the solution A is 0.1-1.0 mol/L; the concentration of the solution B is 1.0-5.0 mol/L; the concentration of the solution C is 0.1 mol/L-1.0 mol/L.
The embodiment of the invention also provides a self-powered piezoelectric enhanced photocatalytic hydrogen production method, which comprises the following steps:
(1) putting ammonia borane aqueous solution into a photocatalytic hydrogen production reactor, and adding a strontium-doped molybdenum sulfide piezoelectric reinforcing material (Sr-MoS) into the ammonia borane aqueous solution2Semiconductor material) to form a hydrogen production reaction system, and then sealing the reactor;
(2) adjusting the temperature of the reactor to 1-5 ℃, then pumping the system to vacuum, and adjusting the temperature in the reactor to 20-30 ℃ after the reactor reaches a vacuum state; (ii) a
(3) And applying ultrasonic waves to a hydrogen production reaction system in the reactor, and irradiating the hydrogen production reaction system with near infrared light to react in the hydrogen production reaction system and generate hydrogen.
Further, the photocatalytic hydrogen production reactor is shaded, so that ultraviolet light and visible light are prevented from entering a hydrogen production reaction system.
Further, the wavelength of the near infrared light is 850 nm.
Further, vacuum resin is used for sealing treatment.
Compared with the prior art, the invention has the advantages that: the strontium-doped molybdenum sulfide material provided by the invention has an enhanced piezoelectric effect, can effectively utilize mechanical energy in the nature (such as energy prepared by vibration, noise, ultrasonic waves, stirring and the like) to generate hydrogen energy, provides a new channel for preparing hydrogen energy, expands the practical application of hydrogen production technology, and solves the problem that hydrogen is difficult to store because the prepared hydrogen is used along with preparation. The hydrogen production is enhanced by adopting borane as a hydrogen storage material, so that the self-powered piezoelectric hydrogen production is realized, and the preparation method of the strontium-doped molybdenum sulfide material is simple and easy to implement, and is green and environment-friendly.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments described in the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 shows a MoS provided by the present invention2And Sr-MoS2XRD pattern of the sample;
FIG. 2a is a MoS provided by the present invention2The transmission electron microscope characterization chart of the sample, FIG. 2b is the Sr-MoS provided by the present invention2A transmission electron microscope characterization map of the sample;
FIG. 3 shows a MoS provided by the present invention2And Sr-MoS2Solid state fluorescence map of the sample;
FIG. 4 shows Sr-MoS provided by the present invention2A hydrogen yield curve chart when the sample is used for preparing hydrogen;
FIG. 5 is a reaction mechanism diagram of the photocatalytic hydrogen production reaction provided by the present invention.
Detailed Description
In view of the deficiencies in the prior art, the inventors of the present invention have made extensive studies and extensive practices to provide technical solutions of the present invention. The technical solution, its implementation and principles, etc. will be further explained as follows.
The embodiment of the invention provides a strontium-doped molybdenum sulfide piezoelectric reinforcing material (Sr-MoS)2) The application of the material in self-energized piezoelectric enhanced hydrogen production under infrared light irradiation.
Further, the strontium-doped molybdenum sulfide material comprises molybdenum sulfide MoS which is responsive to near infrared light2The material and the divalent strontium ions doped in the molybdenum sulfide and on the surface of the molybdenum sulfide.
Further, the mass of the divalent strontium ions is 10.0 wt% -35.0 wt% of the mass of the molybdenum sulfide material.
Further, the forbidden band width of the strontium-doped molybdenum sulfide material is 0.7eV-1.3 eV.
Further, the strontium-doped molybdenum sulfide MoS2The response range of the semiconductor material to infrared light is 780-1550 nm.
Furthermore, under the condition that the temperature is 20-30 ℃, ultrasonic wave and near infrared light irradiation are simultaneously applied to a hydrogen production reaction system which is mainly formed by mixing a strontium-doped molybdenum sulfide material and ammonia borane aqueous solution, so that the preparation of hydrogen is realized.
Furthermore, the power of the ultrasonic wave is 20-30 KHz.
Further, the strontium-doped molybdenum sulfide material is prepared by a hydrothermal method, and the preparation method comprises the following steps:
(1) dissolving sodium molybdate in deionized water, and carrying out ultrasonic treatment for 30-60mins until the solution A is prepared;
(2) dissolving thiourea in deionized water, and carrying out ultrasonic treatment for 30-60mins until the solution B is prepared;
(3) dissolving strontium chloride hexahydrate in deionized water, and carrying out ultrasonic treatment for 30-60mins until the solution C is prepared;
(4) dropwise adding the solution B and the solution C into the solution A, and carrying out ultrasonic treatment for 30-60mins until the solution B and the solution C are uniformly mixed to obtain a mixed solution D;
(5) transferring the mixed solution D into a high-pressure reaction kettle, and reacting for 20-30h at the temperature of 150-300 ℃ to obtain the strontium-doped molybdenum sulfide material.
Further, the concentration of the solution A is 0.1 mol/L-1.0 mol/L.
Further, the concentration of the solution B is 1.0 mol/L-5.0 mol/L.
Further, the concentration of the solution C is 0.1 mol/L-1.0 mol/L.
The embodiment of the invention also provides a self-powered piezoelectric enhanced photocatalytic hydrogen production method, which comprises the following steps:
for piezoelectric reinforcing material (Sr-MoS) containing ammonia borane and strontium-doped molybdenum sulfide2Semiconductor material) and applying mechanical energy and near infrared light to irradiate the hydrogen production reaction system at the same time, so that the hydrogen production reaction system reacts to generate hydrogen. Further, the mechanical energy may be generated by vibration, noise, ultrasonic waves, stirring, etc. applied to the hydrogen production reaction system.
The embodiment of the invention also provides a self-powered piezoelectric enhanced photocatalytic hydrogen production method, which comprises the following steps:
(1) placing ammonia borane aqueous solution in a photocatalytic hydrogen production reactor, and adding ammonia borane aqueous solution into the photocatalytic hydrogen production reactorAdding strontium-doped molybdenum sulfide piezoelectric reinforcing material (Sr-MoS) into ammonia borane aqueous solution2Semiconductor material) to form a hydrogen production reaction system, and then sealing the reactor;
(2) adjusting the temperature of the reactor to 1-5 ℃, then pumping the system to vacuum, and adjusting the temperature in the reactor to 20-30 ℃ after the reactor reaches a vacuum state; (ii) a
(3) And applying ultrasonic waves to a hydrogen production reaction system in the reactor, and irradiating the hydrogen production reaction system with near infrared light to react in the hydrogen production reaction system and generate hydrogen.
Further, the photocatalytic hydrogen production reactor is shaded, so that ultraviolet light and visible light are prevented from entering a hydrogen production reaction system.
Further, the wavelength of the near infrared light is 850 nm.
Further, vacuum resin is used for sealing treatment.
The reaction mechanism of the photocatalytic hydrogen production provided by the invention is that NH is carried out in the presence of a proper catalyst3BH3Hydrogen may be released by solvolysis or thermal decomposition, as follows:
NH3BH3(aq)+2H2O(l)=NH4 +(aq)+BO2 -(aq)+3H2(g) (as shown in FIG. 5)
In the present invention, molybdenum sulfide itself is a semiconductor material that can respond to near infrared light and has a piezoelectric effect. The catalyst has three catalytic paths, the first is the thermal catalysis of the catalyst, which reduces the reaction potential of ammonia borane and water and accelerates the reaction rate. The second one is photocatalysis in response to 850nm near infrared light, electron transition occurs when the material is radiated by 850nm near infrared light, and photo-generated electrons react with protons h + in water to generate hydrogen. Since the electronegativity of H in the system is higher than that of B, H attracts free electrons to form hydride H-. Photoproduction of holes with hydride H-The combination produces hydrogen. The third is that the catalyst generates piezoelectric effect in ultrasonic oscillation, and self-establishing electric field is formed inside the material to make electronsMoving directionally, producing electrons and protons H in water+Reacting to generate hydrogen, generating positive hole and negative hydrogen ion H-The combination produces hydrogen. After strontium is doped into molybdenum sulfide, the forbidden bandwidth of the material is narrowed from the aspect of photocatalysis, the theoretical absorption boundary of the material is widened, and the utilization efficiency of light is improved. And the defects of the material are increased after doping, so that the recombination of electrons and holes is reduced, and the photocatalytic efficiency of the material is improved. From the aspect of piezoelectric catalysis, the surface defects of the material are increased, so that the entropy and the chaos of the material are increased, and the bulk defects of the material are increased, so that the symmetry of the material is reduced. The reduction of symmetry enhances the piezoelectric effect of the material, effectively inhibits the recombination of electrons and holes, and improves the piezoelectric catalysis efficiency of the material. In conclusion, the doping of strontium improves the photocatalytic hydrogen production activity of molybdenum sulfide.
In one embodiment, the strontium-doped molybdenum sulfide material Sr-MoS prepared by the invention2The semiconductor material is applied to automobiles, converts vibration energy in the automobile driving process into electric energy, and then hydrogen is prepared through photocatalytic reaction and is used as automobile fuel to realize self-energy supply hydrogen production.
The technical solution of the present invention is further explained below with reference to several examples.
Example 1
Piezoelectric reinforced material strontium-doped molybdenum sulfide material Sr-MoS2Preparation of semiconductor material, wherein Sr is MoS in mass 210% of the mass of (a).
(1) 2.42g (0.01mol) of sodium molybdate (NaMoO)4.2H2O) is dissolved in 30mL deionized water, and is subjected to ultrasonic treatment for 30mins until the solution A is prepared after uniform mixing;
(2) 3.05g (0.04mol) of thiourea [ (NH)2)2CS]Dissolving in 30mL of deionized water, and carrying out ultrasonic treatment for 30mins until the solution B is uniformly mixed to obtain a solution B;
(3) dissolving 0.400g (0.0015mol) of strontium chloride hexahydrate in deionized water, and carrying out ultrasonic treatment for 60mins until the solution C is uniformly mixed to obtain a solution C;
(4) dropwise adding the solution B and the solution C into the solution A, and carrying out ultrasonic treatment for 60mins until the solution B and the solution C are uniformly mixed to obtain a mixed solution D;
(5) the mixed solution D is processed to 100mL in constant volume and then transferred to a high-pressure reaction kettle, the reaction is carried out for 24 hours under the condition of controlling the temperature to be 200 ℃, and after the reaction is finished, the self-powered piezoelectric reinforcing material Sr-MoS is prepared after the mixed solution is cooled, filtered, and placed in a vacuum drying oven to be dried for 6 hours under the condition of 60 DEG C2A semiconductor material.
The strontium-doped molybdenum sulfide material Sr-MoS prepared in example 12Semiconductor material and molybdenum sulfide MoS2XRD detection is carried out on the material, and the detection result is shown in figure 1.
The hydrogen production reaction is as follows:
(1) providing 100mL of NH at a concentration of 0.05mol/L3BH3Putting the solution into a photocatalytic hydrogen production reactor, and adding a self-energized piezoelectric reinforcing material (0.01 gSr-MoS) into the solution2Semiconductor material) covered with a quartz glass plate and sealed with the reactor;
(2) connecting the reactor photolysis water hydrogen production system in the step (1) with a low-temperature constant-temperature tank, sealing, controlling the temperature of the low-temperature constant-temperature tank to be 1 ℃, pumping the system to be vacuum, and controlling the temperature of the system to be 25 ℃ through the low-temperature constant-temperature tank after the system reaches a vacuum state;
(3) the reactor is placed in a 28KHz ultrasonic cleaner, the ultrasonic is started, a near infrared light source with the wavelength of 850nm is placed 10cm above the reactor, the light source enters the reactor through a quartz glass plate to perform photocatalytic reaction, a hydrogen production system by photolysis of water is adjusted to a system circulation state to perform an experiment, and the hydrogen yield per hour is detected by a gas chromatograph every other hour.
Example 2
Piezoelectric reinforced material strontium-doped molybdenum sulfide material Sr-MoS2Preparation of semiconductor material, wherein Sr is MoS in mass 215% of the mass of (a).
(1) 2.42g (0.01mol) of sodium molybdate (NaMoO)4.2H2O) is dissolved in 30mL deionized water, and is subjected to ultrasonic treatment for 30mins until the solution A is prepared after uniform mixing;
(2) 3.05g (0.04mol) of thiourea [ (NH)2)2CS]Dissolved in 30mL of deionized waterCarrying out ultrasonic treatment for 30mins in water until the solution B is prepared after uniform mixing;
(3) dissolving 0.600g (0.0023mol) of strontium chloride hexahydrate in deionized water, and carrying out ultrasonic treatment for 60mins until the solution C is uniformly mixed to obtain a solution C;
(4) dropwise adding the solution B and the solution C into the solution A, and carrying out ultrasonic treatment for 60mins until the solution B and the solution C are uniformly mixed to obtain a mixed solution D;
(5) the mixed solution D is processed to 100mL in constant volume and then transferred to a high-pressure reaction kettle, the reaction is carried out for 24 hours under the condition of controlling the temperature to be 200 ℃, and after the reaction is finished, the self-powered piezoelectric reinforcing material Sr-MoS is prepared after the mixed solution is cooled, filtered, and placed in a vacuum drying oven to be dried for 6 hours under the condition of 60 DEG C2A semiconductor material.
The piezoelectric reinforcing material prepared in the example 2 is doped with molybdenum sulfide Sr-MoS2Semiconductor material and molybdenum sulfide MoS2The material was characterized by transmission electron microscopy and the results are shown in FIG. 2.
Wherein, FIG. 2a shows a MoS provided by the present invention2The transmission electron microscope characterization chart of the sample, FIG. 2b is the Sr-MoS provided by the present invention2A transmission electron microscope characterization map of the sample;
the hydrogen production reaction was the same as the photocatalytic reaction procedure in example 1.
Example 3
Piezoelectric reinforced material strontium-doped molybdenum sulfide material Sr-MoS2Preparation of semiconductor material, wherein Sr is MoS in mass 220% of the mass of (a).
(1) 2.42g (0.01mol) of sodium molybdate (NaMoO)4.2H2O) is dissolved in 30mL deionized water, and is subjected to ultrasonic treatment for 30mins until the solution A is prepared after uniform mixing;
(2) 3.05g (0.04mol) of thiourea [ (NH)2)2CS]Dissolving in 30mL of deionized water, and carrying out ultrasonic treatment for 30mins until the solution B is uniformly mixed to obtain a solution B;
(3) dissolving 0.800g (0.0030mol) of strontium chloride hexahydrate in deionized water, and carrying out ultrasonic treatment for 60mins until the solution C is uniformly mixed to obtain a solution C;
(4) dropwise adding the solution B and the solution C into the solution A, and carrying out ultrasonic treatment for 60mins until the solution B and the solution C are uniformly mixed to obtain a mixed solution D;
(5) the mixed solution D is processed to 100mL in constant volume and then transferred to a high-pressure reaction kettle, the reaction is carried out for 24 hours under the condition of controlling the temperature to be 200 ℃, and after the reaction is finished, the self-powered piezoelectric reinforcing material Sr-MoS is prepared after the mixed solution is cooled, filtered, and placed in a vacuum drying oven to be dried for 6 hours under the condition of 60 DEG C2A semiconductor material.
The piezoelectric reinforcing material prepared in the embodiment 3 is doped with molybdenum sulfide Sr-MoS2Semiconductor material and molybdenum sulfide MoS2Performing solid fluorescence detection on the material to detect MoS2And Sr-MoS2The solid state fluorescence of the sample is shown in FIG. 3.
The hydrogen production reaction was the same as the photocatalytic reaction procedure in example 1.
Example 4
Piezoelectric reinforced material strontium-doped molybdenum sulfide material Sr-MoS2Preparation of semiconductor material, wherein Sr is MoS in mass 225% of the mass of
(1) 2.42g (0.01mol) of sodium molybdate (NaMoO)4.2H2O) is dissolved in 30mL deionized water, and is subjected to ultrasonic treatment for 30mins until the solution A is prepared after uniform mixing;
(2) 3.05g (0.04mol) of thiourea [ (NH)2)2CS]Dissolving in 30mL of deionized water, and carrying out ultrasonic treatment for 30mins until the solution B is uniformly mixed to obtain a solution B;
(3) dissolving 1.00g (0.0038mol) of strontium chloride hexahydrate in deionized water, and carrying out ultrasonic treatment for 60mins until the solution C is uniformly mixed to obtain a solution C;
(4) dropwise adding the solution B and the solution C into the solution A, and carrying out ultrasonic treatment for 60mins until the solution B and the solution C are uniformly mixed to obtain a mixed solution D;
(5) the mixed solution D is processed to 100mL in constant volume and then transferred to a high-pressure reaction kettle, the reaction is carried out for 24 hours under the condition of controlling the temperature to be 200 ℃, and after the reaction is finished, the self-powered piezoelectric reinforcing material Sr-MoS is prepared after the mixed solution is cooled, filtered, and placed in a vacuum drying oven to be dried for 6 hours under the condition of 60 DEG C2A semiconductor material.
The hydrogen production reaction was the same as the photocatalytic reaction procedure in example 1.
Example 5
Piezoelectric reinforcing materialStrontium-doped molybdenum sulfide material Sr-MoS2Preparation of semiconductor material, wherein Sr is MoS in mass 230% of the mass of (a).
(1) 2.42g (0.01mol) of sodium molybdate (NaMoO)4.2H2O) is dissolved in 30mL deionized water, and is subjected to ultrasonic treatment for 30mins until the solution A is prepared after uniform mixing;
(2) 3.05g (0.04mol) of thiourea [ (NH)2)2CS]Dissolving in 30mL of deionized water, and carrying out ultrasonic treatment for 30mins until the solution B is uniformly mixed to obtain a solution B;
(3) dissolving 1.20g (0.0045mol) of strontium chloride hexahydrate in deionized water, and carrying out ultrasonic treatment for 60mins until the solution C is uniformly mixed to obtain a solution C;
(4) dropwise adding the solution B and the solution C into the solution A, and carrying out ultrasonic treatment for 60mins until the solution B and the solution C are uniformly mixed to obtain a mixed solution D;
(5) the mixed solution D is processed to 100mL in constant volume and then transferred to a high-pressure reaction kettle, the reaction is carried out for 24 hours under the condition of controlling the temperature to be 200 ℃, and after the reaction is finished, the self-powered piezoelectric reinforcing material Sr-MoS is prepared after the mixed solution is cooled, filtered, and placed in a vacuum drying oven to be dried for 6 hours under the condition of 60 DEG C2A semiconductor material.
The hydrogen production reaction was the same as the photocatalytic reaction procedure in example 1.
Example 6
Piezoelectric reinforced material strontium-doped molybdenum sulfide material Sr-MoS2Preparation of semiconductor material, wherein Sr is MoS in mass 235% of the mass of (a).
(1) 2.42g (0.01mol) of sodium molybdate (NaMoO)4.2H2O) is dissolved in 30mL deionized water, and is subjected to ultrasonic treatment for 30mins until the solution A is prepared after uniform mixing;
(2) 3.05g (0.04mol) of thiourea [ (NH)2)2CS]Dissolving in 30mL of deionized water, and carrying out ultrasonic treatment for 30mins until the solution B is uniformly mixed to obtain a solution B;
(3) dissolving 1.40g (0.0052mol) of strontium chloride hexahydrate in deionized water, and carrying out ultrasonic treatment for 60mins until the solution C is uniformly mixed to obtain a solution C;
(4) dropwise adding the solution B and the solution C into the solution A, and carrying out ultrasonic treatment for 60mins until the solution B and the solution C are uniformly mixed to obtain a mixed solution D;
(5) the mixed solution D is processed to 100mL in constant volume and then transferred to a high-pressure reaction kettle, the reaction is carried out for 24 hours under the condition of controlling the temperature to be 200 ℃, and after the reaction is finished, the self-powered piezoelectric reinforcing material Sr-MoS is prepared after the mixed solution is cooled, filtered, and placed in a vacuum drying oven to be dried for 6 hours under the condition of 60 DEG C2A semiconductor material.
The hydrogen production reaction was the same as the photocatalytic reaction procedure in example 1.
FIG. 4 is a diagram showing Sr-MoS produced in examples 1, 2, 3, 4, 5 and 6 according to the present invention2The hydrogen yield of the sample during hydrogen production is plotted.
It should be understood that the above-mentioned embodiments are merely illustrative of the technical concepts and features of the present invention, which are intended to enable those skilled in the art to understand the contents of the present invention and implement the present invention, and therefore, the protection scope of the present invention is not limited thereby. All equivalent changes and modifications made according to the spirit of the present invention should be covered within the protection scope of the present invention.
Claims (10)
1. Strontium-doped molybdenum sulfide piezoelectric reinforced material (Sr-MoS)2) The application of the material in self-energized piezoelectric enhanced hydrogen production under infrared light irradiation.
2. Use according to claim 1, characterized in that: the strontium-doped molybdenum sulfide material comprises molybdenum sulfide MoS having response to near infrared light2The material and the divalent strontium ions doped in the molybdenum sulfide and on the surface of the molybdenum sulfide.
3. Use according to claim 2, characterized in that: the mass of the divalent strontium ions is 10.0 wt% -35.0 wt% of the mass of the molybdenum sulfide material.
4. Use according to claim 2, characterized in that: the forbidden band width of the strontium-doped molybdenum sulfide material is 0.7eV-1.3 eV.
5. Use according to claim 2, characterized in that: the strontium-doped molybdenum sulfide MoS2The response range of the semiconductor material to infrared light is 780-1550 nm.
6. Use according to claim 2, characterized in that it comprises: under the condition that the temperature is 20-30 ℃, ultrasonic wave and near infrared light irradiation are simultaneously applied to a hydrogen production reaction system which is mainly formed by mixing a strontium-doped molybdenum sulfide material and ammonia borane aqueous solution, so that the preparation of hydrogen is realized.
7. Use according to claim 6, characterized in that: the power of the ultrasonic wave is 20-30 KHz.
8. Use according to claim 1, wherein the strontium-doped molybdenum sulfide material is prepared by a hydrothermal method, and the preparation method comprises the following steps:
(1) dissolving sodium molybdate in deionized water, and carrying out ultrasonic treatment for 30-60mins until the solution A is prepared;
(2) dissolving thiourea in deionized water, and carrying out ultrasonic treatment for 30-60mins until the solution B is prepared;
(3) dissolving strontium chloride hexahydrate in deionized water, and carrying out ultrasonic treatment for 30-60mins until the solution C is prepared;
(4) dropwise adding the solution B and the solution C into the solution A, and carrying out ultrasonic treatment for 30-60mins until the solution B and the solution C are uniformly mixed to obtain a mixed solution D;
(5) transferring the mixed solution D into a high-pressure reaction kettle, and reacting for 20-30h at the temperature of 150-300 ℃ to obtain the strontium-doped molybdenum sulfide material.
9. Use according to claim 8, characterized in that: the concentration of the solution A is 0.1-1.0 mol/L; the concentration of the solution B is 1.0-5.0 mol/L; the concentration of the solution C is 0.1 mol/L-1.0 mol/L.
10. A self-powered piezoelectric enhanced photocatalytic hydrogen production method is characterized by comprising the following steps:
(1) putting ammonia borane aqueous solution into a photocatalytic hydrogen production reactor, and adding a strontium-doped molybdenum sulfide piezoelectric reinforcing material (Sr-MoS) into the ammonia borane aqueous solution2) Forming a hydrogen production reaction system, and then sealing the reactor;
(2) adjusting the temperature of the reactor to 1-5 ℃, then pumping the system to vacuum, and adjusting the temperature in the reactor to 20-30 ℃ after the reactor reaches a vacuum state;
(3) and applying ultrasonic waves to a hydrogen production reaction system in the reactor, and irradiating the hydrogen production reaction system with near infrared light to react in the hydrogen production reaction system and generate hydrogen.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202010200660.XA CN111377483A (en) | 2020-03-20 | 2020-03-20 | Application of strontium-doped molybdenum sulfide material in self-powered piezoelectricity-enhanced hydrogen production |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202010200660.XA CN111377483A (en) | 2020-03-20 | 2020-03-20 | Application of strontium-doped molybdenum sulfide material in self-powered piezoelectricity-enhanced hydrogen production |
Publications (1)
Publication Number | Publication Date |
---|---|
CN111377483A true CN111377483A (en) | 2020-07-07 |
Family
ID=71215443
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202010200660.XA Pending CN111377483A (en) | 2020-03-20 | 2020-03-20 | Application of strontium-doped molybdenum sulfide material in self-powered piezoelectricity-enhanced hydrogen production |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN111377483A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112851322A (en) * | 2020-12-29 | 2021-05-28 | 苏州金宏气体股份有限公司 | Pd monatomic BiFeO3Piezoelectric porous ceramic, preparation method thereof and efficient hydrogen production |
CN112876246A (en) * | 2020-12-29 | 2021-06-01 | 苏州金宏气体股份有限公司 | Pd monatomic potassium niobate piezoelectric porous ceramic, preparation method thereof and efficient hydrogen production |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20130084474A1 (en) * | 2010-03-18 | 2013-04-04 | Randell L. Mills | Electrochemical hydrogen-catalyst power system |
CN104307538A (en) * | 2014-10-13 | 2015-01-28 | 东南大学 | Preparation and application methods of high-efficiency composite photocatalytic material |
CN107012474A (en) * | 2016-01-28 | 2017-08-04 | 中国科学院大连化学物理研究所 | A kind of method of large-scale solar energy photocatalysis-photoelectrocatalysis hydrogen production by water decomposition |
CN107185558A (en) * | 2017-05-16 | 2017-09-22 | 浙江师范大学 | A kind of photocatalysis hydrogen production catalyst and preparation method thereof |
US20190002759A1 (en) * | 2017-06-02 | 2019-01-03 | Nexdot | Luminescent particles comprising encapsulated nanoparticles and uses thereof |
CN109985666A (en) * | 2018-01-02 | 2019-07-09 | 中国科学院上海硅酸盐研究所 | A kind of MoS of surface modification2Catalyst is catalyzed the application produced in hydrogen in piezoelectricity |
-
2020
- 2020-03-20 CN CN202010200660.XA patent/CN111377483A/en active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20130084474A1 (en) * | 2010-03-18 | 2013-04-04 | Randell L. Mills | Electrochemical hydrogen-catalyst power system |
CN104307538A (en) * | 2014-10-13 | 2015-01-28 | 东南大学 | Preparation and application methods of high-efficiency composite photocatalytic material |
CN107012474A (en) * | 2016-01-28 | 2017-08-04 | 中国科学院大连化学物理研究所 | A kind of method of large-scale solar energy photocatalysis-photoelectrocatalysis hydrogen production by water decomposition |
CN107185558A (en) * | 2017-05-16 | 2017-09-22 | 浙江师范大学 | A kind of photocatalysis hydrogen production catalyst and preparation method thereof |
US20190002759A1 (en) * | 2017-06-02 | 2019-01-03 | Nexdot | Luminescent particles comprising encapsulated nanoparticles and uses thereof |
CN109985666A (en) * | 2018-01-02 | 2019-07-09 | 中国科学院上海硅酸盐研究所 | A kind of MoS of surface modification2Catalyst is catalyzed the application produced in hydrogen in piezoelectricity |
Non-Patent Citations (3)
Title |
---|
WU, JYH MING ET AL.: "Piezoelectricity induced water splitting and formation of hydroxyl radical from active edge sites of MoS2 nanoflowers", 《NANO ENERGY》 * |
YEIN, WIN THI ET AL.: "Piezoelectric potential induced the improved micro-pollutant dye degradation of Co doped MoS2 ultrathin nanosheets in dark", 《CATALYSIS COMMUNICATIONS》 * |
ZHANG, YUXIAO ET AL.: "Defect Engineering of MoS2 and Its Impacts on Electrocatalytic and Photocatalytic Behavior in Hydrogen Evolution Reactions", 《CHEMISTRY-AN ASIAN JOURNAL》 * |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112851322A (en) * | 2020-12-29 | 2021-05-28 | 苏州金宏气体股份有限公司 | Pd monatomic BiFeO3Piezoelectric porous ceramic, preparation method thereof and efficient hydrogen production |
CN112876246A (en) * | 2020-12-29 | 2021-06-01 | 苏州金宏气体股份有限公司 | Pd monatomic potassium niobate piezoelectric porous ceramic, preparation method thereof and efficient hydrogen production |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN111377481A (en) | Application of cobalt-doped molybdenum sulfide material in self-powered piezoelectricity-enhanced hydrogen production | |
CN111348620A (en) | Application of manganese-doped molybdenum sulfide material in self-powered piezoelectricity-enhanced hydrogen production | |
CN108067281B (en) | Porous g-C3N4Photocatalyst and preparation method and application thereof | |
CN110975886B (en) | Porous two-dimensional zinc cadmium sulfide nanosheet and preparation method and application thereof | |
CN111377483A (en) | Application of strontium-doped molybdenum sulfide material in self-powered piezoelectricity-enhanced hydrogen production | |
CN110124723A (en) | ZnO/g-C3N4Composite photo-catalyst and its preparation method and application | |
CN100396373C (en) | Method for preparing carbon nanometer tube/titanium dioxide composite photocatalyst | |
CN107413337A (en) | High efficiency photocatalysis CO2The preparation of hydrogenation material photochemical catalyst and application process | |
CN105709793A (en) | Cadmium sulfide nanoparticle modified niobium pentoxide nanorod/nitrogen doped graphene composite photocatalyst and preparation method and application thereof | |
CN110813335A (en) | Preparation method of nickel phosphide cocatalyst by performing photo-deposition on cadmium sulfide | |
CN111377479A (en) | Application of nickel-doped molybdenum sulfide material in self-powered piezoelectricity-enhanced hydrogen production | |
CN112439420A (en) | Preparation method of photo-thermal coupling methanol steam reforming hydrogen production composite catalyst | |
CN109554176B (en) | g-C embedded with carbon quantum dots3N composite material and preparation method and application thereof | |
CN109225276B (en) | Flower-like molybdenum diselenide/carbon nanotube composite material and synthesis method and application thereof | |
CN111841530A (en) | Catalyst for promoting water photolysis to produce hydrogen and preparation method thereof | |
CN107308973B (en) | Basic cobalt phosphate nanoneedle composite LTON photocatalyst and preparation method and application thereof | |
CN110368999B (en) | Catalyst, preparation method and application thereof | |
CN111377480B (en) | Application of iron (II) -doped molybdenum sulfide material in self-powered piezoelectric enhanced hydrogen production | |
Zhang et al. | Enhanced electron density of the π-conjugated structure and in-plane charge transport to boost photocatalytic H2 evolution of g-C3N4 | |
CN111377482A (en) | Application of barium-doped molybdenum sulfide material in self-powered piezoelectricity-enhanced hydrogen production | |
CN109289898B (en) | Graphite-phase carbon nitride foam composite cuprous oxide quantum dot photocatalytic material and preparation method thereof | |
CN111974436B (en) | Graphite-phase carbon nitride and preparation method thereof, and method for producing hydrogen by photocatalytic water | |
CN112226230A (en) | Hydrophilic solid up-conversion luminescent material, preparation method thereof and application thereof in hydrogen production reaction by photolysis of water | |
CN115193466B (en) | Bimetallic hydrogen evolution catalyst and preparation method thereof | |
CN115663215B (en) | Preparation method of supported electrocatalyst |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
RJ01 | Rejection of invention patent application after publication | ||
RJ01 | Rejection of invention patent application after publication |
Application publication date: 20200707 |