CN111370867A - Double-frequency millimeter wave microstrip antenna based on single-layer medium low profile and multiple short circuit pins - Google Patents
Double-frequency millimeter wave microstrip antenna based on single-layer medium low profile and multiple short circuit pins Download PDFInfo
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- CN111370867A CN111370867A CN202010175908.1A CN202010175908A CN111370867A CN 111370867 A CN111370867 A CN 111370867A CN 202010175908 A CN202010175908 A CN 202010175908A CN 111370867 A CN111370867 A CN 111370867A
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- microstrip antenna
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- dielectric substrate
- millimeter wave
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/50—Structural association of antennas with earthing switches, lead-in devices or lightning protectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
- H01Q1/38—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith formed by a conductive layer on an insulating support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/48—Earthing means; Earth screens; Counterpoises
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q13/00—Waveguide horns or mouths; Slot antennas; Leaky-waveguide antennas; Equivalent structures causing radiation along the transmission path of a guided wave
- H01Q13/08—Radiating ends of two-conductor microwave transmission lines, e.g. of coaxial lines, of microstrip lines
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q9/00—Electrically-short antennas having dimensions not more than twice the operating wavelength and consisting of conductive active radiating elements
- H01Q9/04—Resonant antennas
- H01Q9/0407—Substantially flat resonant element parallel to ground plane, e.g. patch antenna
- H01Q9/045—Substantially flat resonant element parallel to ground plane, e.g. patch antenna with particular feeding means
Abstract
The invention relates to a double-frequency millimeter wave microstrip antenna based on a single-layer medium low profile and a plurality of short circuit pins, which comprises a microstrip antenna body, wherein the microstrip antenna body comprises a single-layer medium substrate, a ground plate and a radiation patch which are respectively arranged on the end surfaces of two sides of the single-layer medium substrate, a feed coaxial pin and three short circuit pins, wherein the feed coaxial pin and the three short circuit pins penetrate through the single-layer medium substrate; one end of the feed coaxial and three short circuit needles is fixed on one side end face of the radiation patch, which is attached to the single-layer dielectric substrate, and the other end of the feed coaxial and three short circuit needles is fixed on one side end face of the ground plate, which is attached to the single-layer dielectric substrate; on the basis of the traditional TM10 mode and TM12 mode resonance modes, the invention increases the 2-order and 3-order zero mode resonance modes which are not existed originally, thereby expanding the bandwidth; meanwhile, the distribution of 2-order and 3-order zero mode resonance modes and original TM10 mode and TM12 mode resonance modes is adjusted by adjusting the positions of the plurality of shorting pins, so that TM10 mode and 2-order zero mode resonance are close to form one frequency band, and TM12 mode and 3-order zero mode resonance are close to form the other frequency band.
Description
Technical Field
The invention relates to the technical field of wireless communication, in particular to a double-frequency millimeter wave microstrip antenna based on a single-layer medium low profile and a plurality of short circuit pins.
Background
With the continuous development of communication technology, 5G mobile communication technology has already formally started to be commercially used, however, the frequency band used by the currently commercial 5G communication is mainly the frequency band lower than 6GHz, and the future frequency band will continuously rise to two world mainstream millimeter wave frequency bands of 24 GHz-27 GHz and 37 GHz-40 GHz. The antenna is used as a key component for information receiving and transmitting of the communication system, and on one hand, the antenna needs to be suitable for two double-frequency millimeter wave frequency bands of 24 GHz-27 GHz and 37 GHz-40 GHz; on the other hand, a low-profile and ultra-thin microstrip antenna is required to adapt to the miniaturization of the antenna module.
The prior art antenna has the following defects:
(1) most of two frequency bands of the existing dual-band antenna only consist of single resonant frequency, for example, only two resonant modes of a TM10 mode and a TM12 mode can be utilized, and the bandwidth is narrow;
(2) the existing broadband microstrip antenna is generally designed by multilayer media or high section with thicker media, has a complex structure and higher space occupancy rate, and is not beneficial to the miniaturization of the antenna.
(3) In order to realize the dual-band characteristic, the conventional antenna usually needs to be designed with some relatively complex feed networks, which increases the complexity of the antenna and is not favorable for high-density integration of the millimeter wave antenna.
Therefore, the invention develops the double-frequency millimeter wave microstrip antenna based on the single-layer medium low profile and the plurality of short-circuit pins to solve the problems in the prior art, and the retrieval shows that the technical scheme which is the same as or similar to the invention is not found.
Disclosure of Invention
The invention aims to: the utility model provides a dual-frenquency millimeter wave microstrip antenna based on single-layer medium low section and many shorting pins to solve among the prior art antenna and can not obtain the dual-band of enough bandwidth under the low section of single-layer medium and the simple prerequisite of feed structure and bring the mainstream frequency channel that covers future millimeter wave band, can't reach the dual-band effect of 26GHz and 39GHz, and be difficult for miniaturizing, occupy the problem in a large amount of spaces.
The technical scheme of the invention is as follows: the double-frequency millimeter wave microstrip antenna based on the single-layer medium low profile and the plurality of short-circuit pins comprises a microstrip antenna body, wherein the microstrip antenna body comprises a single-layer medium substrate, a ground plate and a radiation patch which are respectively arranged on the end surfaces of two sides of the single-layer medium substrate, a feed coaxial and three short-circuit pins which are arranged by penetrating through the single-layer medium substrate; one end of the feed coaxial and three short circuit needles is fixed on one side end face of the radiation patch, which is attached to the single-layer dielectric substrate, and the other end of the feed coaxial and three short circuit needles is fixed on one side end face of the ground plate, which is attached to the single-layer dielectric substrate.
Preferably, the single-layer dielectric substrate is of a flat cuboid structure, the length of the single-layer dielectric substrate is 8.6mm, the width of the single-layer dielectric substrate is 6.7mm, the thickness of the single-layer dielectric substrate is 0.508mm, the single-layer dielectric substrate is made of Rogers4350, and the dielectric constant epsilon of the single-layer dielectric substrate isr＝3.48。
Preferably, the shape and size of the grounding plate are the same as those of the single-layer dielectric substrate.
Preferably, the outer contour of the radiation patch is a rectangular structure, the length is 4.3mm, and the width is 3.35 mm.
Preferably, the coaxial inner contour and outer contour of the feed are both circular structures, the inner diameter is 0.15mm, and the outer diameter is 0.25 mm.
Preferably, the three shorting pins are made of copper, the radius of two shorting pins is 0.1mm, and the radius of one shorting pin is 0.2 mm.
Preferably, the operating frequency of the microstrip antenna body is 24 GHz-27 GHz and 33 GHz-40 GHz.
Compared with the prior art, the invention has the advantages that:
(1) the invention changes the original current path on the surface of the radiation patch and increases the current zero point by adding three short-circuit pins, and the invention is based on the single-layer medium substrate, the section height is small, and the miniaturization of the antenna can be realized.
(2) The invention can form new 2-order and 3-order zero-mode resonance modes by prolonging the current path in the limited volume, and can adjust the distribution conditions of the original TM10 mode and TM12 mode resonance modes and the newly added 2-order and 3-order zero-mode resonance modes on the frequency by adjusting the position of the shorting pin, so that the TM10 mode and 2-order zero-mode resonance are close to each other, and the TM12 mode and 3-order zero-mode resonance are close to each other, thereby realizing the broadband dual-band characteristic.
(3) The invention has simple structure and simple feed mode, and does not need to design some additional structures to expand the bandwidth.
Drawings
The invention is further described with reference to the following figures and examples:
FIG. 1 is a top view of a dual-frequency millimeter wave microstrip antenna based on a single-layer dielectric low profile and a plurality of shorting pins according to the present invention;
FIG. 2 is a side view of the dual-band millimeter wave microstrip antenna based on a single-layer dielectric low profile and a plurality of shorting pins according to the present invention;
FIG. 3 is a voltage standing wave ratio of the dual-frequency millimeter wave microstrip antenna based on a single-layer medium low profile and a plurality of shorting pins according to the present invention;
FIG. 4 shows the input impedance of the dual-band millimeter wave microstrip antenna based on a single-layer dielectric low profile and a plurality of shorting pins according to the present invention;
FIG. 5 is a return loss chart of an unloaded shorting pin in the prior art;
fig. 6 is a return loss reference diagram of the loading short-circuit pin of the dual-frequency millimeter wave microstrip antenna based on the single-layer medium low profile and the plurality of short-circuit pins.
Wherein: 1. the antenna comprises a single-layer dielectric substrate, a grounding plate, a radiating patch, a feed coaxial line, a short-circuit pin and a radiating patch, wherein the single-layer dielectric substrate comprises 2 the grounding plate, 3 the radiating patch, 4 the feed coaxial line and 5 the short-circuit pin.
Detailed Description
The present invention will be further described in detail with reference to the following specific examples:
as shown in fig. 1 and 2, the dual-frequency millimeter wave microstrip antenna based on the single-layer dielectric low-profile and the plurality of shorting pins comprises a microstrip antenna body, wherein the microstrip antenna body comprises a single-layer dielectric substrate 1, a ground plate 2 and a radiation patch 3 which are respectively arranged on the end surfaces of two sides of the single-layer dielectric substrate 1, a feed coaxial 4 and three shorting pins 5 which are arranged through the single-layer dielectric substrate 1, and the working frequency of the microstrip antenna body is 24 GHz-27 GHz and 33 GHz-40 GHz.
Wherein the single-layer dielectric substrate 1 is in a flat cuboid structure with the length of 8.6mm, the width of 6.7mm and the thickness of 0.508mm, the material selected for the single-layer dielectric substrate 1 is Rogers4350, and the dielectric constant epsilon of the single-layer dielectric substrate isr＝3.48。
The shape and the size of the grounding plate 2 are the same as those of the single-layer dielectric substrate 1, and the grounding plate is attached to the single-layer dielectric substrate 1.
The outer contour of the radiation patch 3 is rectangular, the length is 4.3mm, and the width is 3.35 mm.
The coaxial feed 4 and the three short circuit pins 5 are arranged perpendicular to the end face of the single-layer dielectric substrate 1, one end of the coaxial feed is fixed on the end face of one side, attached to the single-layer dielectric substrate 1, of the radiation patch 3, and the other end of the coaxial feed is fixed on the end face of one side, attached to the single-layer dielectric substrate 1, of the grounding plate 2; wherein, the inner contour and the outer contour of the feed coaxial 4 are both circular structures, the inner diameter is 0.15mm, and the outer diameter is 0.25 mm; the three short circuit pins 5 are made of copper, wherein the radius of two short circuit pins 5 is 0.1mm, and the radius of one short circuit pin 5 is 0.2 mm; the three shorting pins 5 arranged between the radiation patch 3 and the ground plate 2 are used for changing an original current path on the surface of the radiation patch 3 and increasing current zero points, so that the effect of adding new 2-order and 3-order zero-mode resonance modes can be achieved, the distribution conditions of the original TM10 mode and TM12 mode resonance modes and newly-added 2-order and 3-order zero-mode resonance modes can be adjusted by adjusting the positions of the shorting pins 5, the TM10 mode and the 2-order zero-mode resonance are close to each other, the TM12 mode and the 3-order zero-mode resonance are close to each other, the radiation characteristic of the microstrip antenna body is changed, and the dual-band characteristic of a millimeter wave band is realized.
In this embodiment, a specific experiment is performed on the dual-frequency millimeter wave microstrip antenna based on the single-layer medium low profile and the plurality of shorting pins 5, and the experimental results are shown in fig. 3, 4, and 6.
Wherein, fig. 3 and fig. 4 are the voltage standing wave ratio and the input impedance of the microstrip antenna body of the present invention, it can be seen that the microstrip antenna body has the dual-band characteristic, the impedance bandwidth when the Voltage Standing Wave Ratio (VSWR) is less than or equal to 2 is 23.94 GHz-27.23 GHz, 32.93 GHz-40.06 GHz, and the input impedance is relatively stable in this range.
In the prior art, as shown in fig. 5, under the condition that there is no shorting pin 5, the microstrip antenna body generates a resonant frequency in a frequency band of 20GHz to 45GHz, and the microstrip antenna body can form two resonances near 24GHz and 36.5GHz, which are respectively a TM10 mode and a TM12 mode; fig. 6 shows the resonant frequency of the microstrip antenna body generated in the frequency band of 12.6 GHz-45 GHz when three shorting pins 5 are designed on the microstrip antenna body of the present invention, the antenna body can form four resonances in the frequency band of 20 GHz-45 GHz, which are respectively 2-order zero mode, TM10 mode, 3-order zero mode and TM12 mode, and the TM10 mode and the 2-order zero mode are close to form a resonant frequency of 24 GHz-27 GHz, and the TM12 mode and the 3-order zero mode are close to form a resonant frequency of 33 GHz-40 GHz, thereby realizing the dual-band characteristic of the millimeter wave band.
The invention introduces new zero mode resonance by loading three short circuit needles 5, selects to load a plurality of short circuit needles 5 between the radiation patch 3 and the ground plate 2, and adds the short circuit needles 5 to increase the current zero point on the surface of the radiation patch 3, thereby forming new zero mode resonance; the distribution conditions of the original resonance mode and the newly added zero mode can be adjusted by adjusting the positions of the short circuit pins 5, and finally the original resonance mode is close to the 2 nd order zero mode and the 3 rd order zero mode nearby the original resonance mode, for example, the TM10 mode and the 2 nd order zero mode are close to each other to form a widened frequency band, and the TM12 mode and the 3 rd order zero mode are close to each other to form another widened frequency band, so that the effect of expanding the width of each single frequency band of the dual-frequency antenna is realized to cover the mainstream frequency band of the future millimeter wave band, and the dual-frequency antenna has the characteristics of low profile of a single-layer medium, simple structure and the.
The above embodiments are merely illustrative of the technical ideas and features of the present invention, and the purpose of the embodiments is to enable those skilled in the art to understand the contents of the present invention and implement the present invention, and not to limit the protection scope of the present invention. It will be evident to those skilled in the art that the invention is not limited to the details of the foregoing illustrative embodiments, and that the present invention may be embodied in other specific forms without departing from the spirit or essential attributes thereof, and it is therefore desired that the present embodiments be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein, without any reference thereto being construed as limiting the claim concerned.
Claims (7)
1. Double-frenquency millimeter wave microstrip antenna based on low section of single-layer medium and many short-circuit pins, including the microstrip antenna body, its characterized in that: the microstrip antenna body comprises a single-layer dielectric substrate, a ground plate and a radiation patch which are respectively arranged on the end surfaces of two sides of the single-layer dielectric substrate, a feed coaxial pin and three short-circuit pins which are arranged through the single-layer dielectric substrate; one end of the feed coaxial and three short circuit needles is fixed on one side end face of the radiation patch, which is attached to the single-layer dielectric substrate, and the other end of the feed coaxial and three short circuit needles is fixed on one side end face of the ground plate, which is attached to the single-layer dielectric substrate.
2. The dual-frequency millimeter wave microstrip antenna based on a single-layer medium low profile and a plurality of shorting pins according to claim 1, wherein: the single-layer dielectric substrate is of a flat cuboid structure, the length is 8.6mm, the width is 6.7mm, the thickness is 0.508mm, the material selected for the single-layer dielectric substrate is Rogers4350, and the dielectric constant epsilon of the single-layer dielectric substrate isr＝3.48。
3. The dual-frequency millimeter wave microstrip antenna based on a single-layer medium low profile and a plurality of shorting pins according to claim 2, wherein: the shape and the size of the grounding plate are the same as those of the single-layer dielectric substrate.
4. The dual-frequency millimeter wave microstrip antenna based on a single-layer medium low profile and a plurality of shorting pins according to claim 1, wherein: the outer contour of the radiation patch is of a rectangular structure, the length of the radiation patch is 4.3mm, and the width of the radiation patch is 3.35 mm.
5. The dual-frequency millimeter wave microstrip antenna based on a single-layer medium low profile and a plurality of shorting pins according to claim 1, wherein: the coaxial inner contour and outer contour of feed all are circular structures, and the internal diameter is 0.15mm, and the external diameter is 0.25 mm.
6. The dual-frequency millimeter wave microstrip antenna based on a single-layer medium low profile and a plurality of shorting pins according to claim 1, wherein: the three short circuit needles are made of copper, wherein the radius of two short circuit needles is 0.1mm, and the radius of one short circuit needle is 0.2 mm.
7. The dual-frequency millimeter wave microstrip antenna based on a single-layer medium low profile and a plurality of shorting pins according to claim 1, wherein: the working frequency of the microstrip antenna body is 24 GHz-27 GHz and 33 GHz-40 GHz.
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| CN202010175908.1A CN111370867A (en) | 2020-03-13 | 2020-03-13 | Double-frequency millimeter wave microstrip antenna based on single-layer medium low profile and multiple short circuit pins |
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| CN202010175908.1A CN111370867A (en) | 2020-03-13 | 2020-03-13 | Double-frequency millimeter wave microstrip antenna based on single-layer medium low profile and multiple short circuit pins |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115425415A (en) * | 2022-09-02 | 2022-12-02 | 江西中烟工业有限责任公司 | Millimeter wave frequency-adjustable patch antenna based on short circuit pin and diode loading |
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| CN108879086A (en) * | 2017-05-16 | 2018-11-23 | 南京理工大学 | A kind of Compact type broadband micro-strip paster antenna with harmonics restraint |
| CN211017394U (en) * | 2020-01-19 | 2020-07-14 | 昆山新仟年微波技术有限公司 | Millimeter wave ultra-wideband low-profile antenna applied to mobile phone terminal |
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2020
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Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20130314283A1 (en) * | 2012-05-23 | 2013-11-28 | Indurstry-Academic Cooperation Foundation, Yonsei University | Aperture-coupled microstrip antenna and manufacturing method thereof |
| CN104269616A (en) * | 2014-09-17 | 2015-01-07 | 电子科技大学 | Rectangular microstrip antenna working in higher-order mode in mobile applications |
| CN204516893U (en) * | 2015-02-12 | 2015-07-29 | 深圳市华信天线技术有限公司 | Omnidirectional antenna |
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| CN115425415A (en) * | 2022-09-02 | 2022-12-02 | 江西中烟工业有限责任公司 | Millimeter wave frequency-adjustable patch antenna based on short circuit pin and diode loading |
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