CN111370283B - Warming-up method - Google Patents
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- CN111370283B CN111370283B CN202010147538.0A CN202010147538A CN111370283B CN 111370283 B CN111370283 B CN 111370283B CN 202010147538 A CN202010147538 A CN 202010147538A CN 111370283 B CN111370283 B CN 111370283B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/32119—Windows
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
- H01J37/32495—Means for protecting the vessel against plasma
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
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Abstract
The invention discloses a warming-up method, which comprises the following steps: introducing a first etching gas into the etching chamber, and etching the warm-up sheet arranged in the etching chamber; the first etching gas can react with the photoresist heating sheet to form a carbon-containing byproduct and cover the surface of a quartz window in the etching chamber; and introducing a second etching gas into the etching chamber to etch the heater chip to form an etching by-product and cover the inner wall of the etching chamber. The invention has the advantages that the first etching gas reacts with the warming sheet containing carbon element to generate carbon or carbon-containing solid compound, the carbon or carbon-containing solid compound is deposited on the quartz cover of the etching cavity to play an isolation protection role on the quartz cover plate, the second etching gas is prevented from reacting with the quartz cover, and the service life of the quartz cover is prolonged.
Description
Technical Field
The invention relates to the field of semiconductor processes, in particular to a warming-up method.
Background
An ICP (inductively Coupled Plasma) etching process is a dry etching process commonly used in a process of manufacturing a semiconductor device such as an LED (Light-Emitting Diode). In the ICP etching process, a warm-up (Season) step is generally required before etching a substrate, and the warm-up step is a step of placing a warm-up sheet (i.e., a substrate having a layer of photoresist on the surface thereof, the warm-up sheet being subjected to gumming and baking but not being subjected to exposure and development) in an etching chamber, etching the warm-up sheet, and covering the inner wall of the etching chamber with a polymer generated by an etching reaction, so that the etching chamber reaches a working state required by the etching process.
The warm-up step is an important process step in the ICP etching process, and particularly needs to be carried out on an unused brand-new etching chamber, an etching chamber after Periodic Maintenance (PM) and an etching chamber with overlong Idle time (Idle) so as to improve the stability and the uniformity among wafers of the etching chamber. Experiments show that the etching rate of the warmed etching chamber is about 30% higher than that of the unheated etching chamber, and the etching selection ratio (the ratio of the etching rate of the substrate to the etching rate of the photoresist) is 30% -50% higher. This is due to: the surface of the etching chamber, especially the surface of the lining, is not flat at a microscopic scale, so that more inelastic collisions and more losses of the plasma on the surface of the etching chamber can be caused. After the warm-up step, polymer generated by etching the warm-up sheet is deposited on the surface of the etching chamber, so that the phenomenon that the surface of the etching chamber is uneven is weakened, inelastic collision of plasma on the surface of the etching chamber is reduced, the proportion of elastic scattering is increased, the density of the plasma is increased, and the etching rate is improved. Moreover, according to the luxlet principle, the polymer existing in the etching chamber can reduce the etching rate of the photoresist on the substrate, which is close to the polymer component, when the substrate is etched, so that the etching selection ratio is improved.
The gas which reacts with the warming sheet in the warming step to generate the polymer is mainly boron trichloride, the component of the quartz window of the chamber contains silicon dioxide, the boron trichloride and the silicon dioxide can react chemically, namely, the quartz window can be etched in the warming process, the service life of the quartz window is further influenced, and the quartz window needs to be replaced when the service life of the quartz window is less than about 3000RF hours. Particularly, when the sapphire substrate is etched, the introduced gas is also boron trichloride, and the phenomenon that the quartz window is etched is more serious.
Therefore, how to reduce the etching of the quartz window during the warm-up process or during the substrate etching process, prolong the service life of the quartz window and reduce the cost is a major problem facing the present.
Disclosure of Invention
The invention aims to provide a warm-up method, which solves the problem that a quartz window is etched in the warm-up process or the substrate etching process, and comprises the following steps:
introducing a first etching gas into the etching chamber, and etching the warm-up sheet arranged in the etching chamber; the first etching gas can react with the warm-up sheet to form a carbon-containing byproduct and cover the surface of a quartz window in the etching chamber;
and introducing a second etching gas into the etching chamber to etch the heater chip to form an etching by-product and cover the inner wall of the etching chamber.
Alternatively, the first etching gas is a mixed gas containing oxygen and nitrogen.
Alternatively, during the process of introducing the first etching gas, the pressure of the etching chamber and the introduction amount of the first etching gas are gradually reduced until the carbon-containing byproducts with the first preset thickness are formed on the inner wall of the etching chamber and the quartz window.
Alternatively, the first predetermined thickness is 3-30 microns.
As an alternative, the following process parameters are adopted in sequence in the process of introducing the first etching gas:
the pressure is 45-55 mTorr, the introduction amount of the first etching gas is 180-220 ml/min, and the etching time is 5-7 min;
the pressure is 25-35 millitorr, the introduction amount of the first etching gas is 180-220 ml/min, and the etching time is 4-6 min;
the pressure is 8-12 millitorr, the introduction amount of the first etching gas is 180-220 ml/min, and the etching time is 5-7 min;
the pressure is 4-6 mTorr, the first etching gas is introduced in an amount of 130-170 ml/min, and the etching time is 6-8 min;
the pressure is 2-4 mTorr, the first etching gas is introduced in an amount of 80-120 ml/min, and the etching time is 7-9 min.
Alternatively, the warming-up method further includes:
and before the second etching gas is introduced into the etching chamber, the pressure of the etching chamber is increased.
Alternatively, the second etching gas is a mixed gas containing boron trichloride or trifluoromethane and boron trichloride.
Alternatively, in the process of introducing the second etching gas, the pressure of the etching chamber and the introduction amount of the second etching gas are gradually reduced until etching byproducts with a second preset thickness are formed on the inner wall of the etching chamber.
Alternatively, the second predetermined thickness is greater than 2 microns.
As an alternative, the following process parameters are adopted in sequence in the process of introducing the second etching gas:
the pressure is 45-55 mTorr, the introduction amount of the second etching gas is 180-220 ml/min, and the etching time is 5-7 min;
the pressure is 25-35 mTorr, the introduction amount of the second etching gas is 180-220 ml/min, and the etching time is 4-6 min;
the pressure is 8-12 millitorr, the introduction amount of the second etching gas is 180-220 ml/min, and the etching time is 5-7 min;
the pressure is 4-6 mTorr, the second etching gas is introduced in an amount of 130-170 ml/min, and the etching time is 6-8 min;
the pressure is 2-4 mTorr, the second etching gas is introduced in an amount of 80-120 ml/min, and the etching time is 7-9 min.
The invention has the beneficial effects that: the etching chamber is internally provided with first etching gas, the first etching gas etches a warming piece containing carbon element, the first etching gas reacts with the warming piece containing carbon element to generate carbon or carbon-containing solid compound, the carbon or carbon-containing solid compound is deposited on a quartz cover (the component contains silicon dioxide) of the etching chamber to play a role in isolating and protecting the quartz cover plate, and when the second etching gas is introduced at the later stage, the second etching gas is prevented from reacting with the quartz cover, so that the service life of the quartz cover is prolonged.
The method of the present invention has other features and advantages which will be apparent from or are set forth in detail in the accompanying drawings and the following detailed description, which are incorporated herein, and which together serve to explain certain principles of the invention.
Drawings
The above and other objects, features and advantages of the present invention will become more apparent by describing in more detail exemplary embodiments thereof with reference to the attached drawings.
FIG. 1 shows a flow chart of steps of a warm-up method according to an embodiment of the invention.
Detailed Description
The present invention will be described in more detail below. While the present invention provides preferred embodiments, it should be understood that the present invention may be embodied in various forms and should not be limited by the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art.
A warm-up method is provided according to an embodiment of the present invention, and fig. 1 is a flowchart illustrating steps of a warm-up method according to an embodiment of the present invention. Referring to fig. 1, the warming-up method includes:
introducing a first etching gas into the etching chamber, and etching the warm-up sheet arranged in the etching chamber; the first etching gas can react with the warming piece to form a carbon-containing byproduct and cover the surface of a quartz window in the etching chamber;
and introducing a second etching gas into the etching chamber, and etching the warm-up wafer to form an etching by-product and cover the inner wall of the etching chamber.
Specifically, the sculpture cavity is confined cavity, and the cavity is inside including quartz window (the composition contains silica), when carrying out the warm-up to the sculpture cavity, need let in boron trichloride gas, and boron trichloride and silica take place chemical reaction, have produced the sculpture to quartz window, and the reaction formula is: BCl3+ SiO 2-SiClX + BOCly. The substances formed by the reaction are known to the person skilled in the art. In the invention, before introducing boron trichloride gas, first etching gas is introduced, and the first etching gas can react with a warm-up sheet (namely a substrate with a layer of photoresist on the surface, wherein the warm-up sheet is coated with glue and baked but not exposed and developed) but does not react with silicon dioxide chemically. The photoresist on the surface of the warmer piece in this example contains a CHO condensate. The first etching gas and the warm sheet are subjected to chemical reaction to generate a simple substance carbon or a solid compound containing carbon, and the simple substance carbon or the solid compound containing carbon is deposited on the inner wall of the etching chamber, the quartz window, the lining and the surface of the chuck in a thin film mode. The deposition thickness is about 3-30 microns. The specific value of the deposited thickness of the film can be considered from two aspects, namely, the aim of protecting the quartz window can be achieved, and the sum of the thickness of the film and the thickness of a polymer film formed subsequently can meet the process requirement. If the total thickness of the thin film is more than 5 micrometers and the total thickness of the thin film is more than 10 micrometers, the thickness of the thin film is not particularly limited in this embodiment, so as to meet the requirements of both aspects. The first etching gas in this embodiment is a mixture of oxygen and nitrogen. The chemical reaction formula of the oxygen, the nitrogen and the warming sheet is as follows: o2+ N2+ CxHyOz-C + COx + H2O + NxOy. The substances formed by the reaction are known to the person skilled in the art. When the boron trichloride gas is introduced, the silicon dioxide is not directly contacted with the boron trichloride, so that the etching of the boron trichloride on the quartz window is avoided, and the service life of the quartz window is prolonged.
And after the carbon simple substance or the carbon-containing solid compound formed on the surface of the quartz window reaches the preset thickness, introducing a second etching gas into the etching chamber to etch the photoresist, wherein the second etching gas can react with the warm-up sheet but does not react with the carbon simple substance or the carbon compound deposited on the quartz window. The second etching gas is usually a mixture of boron trichloride and trifluoromethane or boron trichloride, and the second etching gas is used for etching the heater chip so as to form a polymer deposition layer on the inner surface of the etching cavity, weaken the phenomenon that the surface of the etching cavity is uneven, reduce inelastic collision of a plasma on the surface of the etching cavity, increase the proportion of elastic scattering, improve the rate of etching a substrate and improve the etching selection ratio.
In the process of introducing the first etching gas, the carbon simple substance or the solid compound of carbon generated by the reaction can be uniformly deposited at different positions on the inner surface of the etching chamber by changing the pressure of the etching chamber. When the pressure is lower, the molecular mean free path is long and can reach the bottom of the lining and the chamber, and in the process of gradually changing the pressure, different areas in the etching chamber are covered with the solid compounds forming the simple carbon or the carbon. The pressure of the etching chamber can be changed by gradually reducing the pressure or gradually increasing the pressure.
In this embodiment, a gradual reduction of the pressure in the etch chamber is used. The highest pressure is set to be 45-55 mTorr, the lowest pressure is set to be 2-4 mTorr, the input amount of the first etching gas (nitrogen and oxygen in the embodiment) is changed while the pressure of the etching chamber is changed, and the etching time under the current pressure is changed until carbon simple substance or carbon solid compound with preset thickness is formed on the inner wall of the etching chamber and the surface of the quartz window. Specifically, in this embodiment, the method for etching the heater chip includes: setting the radio frequency power of the upper electrode to be 1000-1200 watts; setting the radio frequency power of the lower electrode to be 250-350 watts; setting the temperature in the cavity to be 0-20 ℃; keeping the above parameters unchanged, sequentially executing the following steps:
s01: the pressure is 45-55 millitorr, the introduction amount of nitrogen and oxygen is 180-220 ml/min, and the etching time is 5-7 min;
in a preferred embodiment, the pressure of the etching chamber is 50 mTorr, the amount of nitrogen and oxygen introduced is 200 ml/min, and the etching time is 6 minutes.
S02: the pressure is 25-35 mTorr, the input amount of nitrogen and oxygen is 180-220 ml/min, and the etching time is 4-6 min;
in a preferred scheme, the pressure of the etching chamber is adjusted to 30 mTorr, the input amount of nitrogen and oxygen is 200 ml/min, and the etching time is 5 minutes.
S03: the pressure is 8-12 mTorr, the input of nitrogen and oxygen is 180-220 ml/min, and the etching time is 5-7 min;
in a preferred scheme, the pressure of the etching chamber is adjusted to 10 millitorr, the input of nitrogen and oxygen is 200 ml/min, and the etching time is 6 minutes.
S04: the pressure is 4-6 mTorr, the input amount of nitrogen and oxygen is 130-170 ml/min, and the etching time is 6-8 min;
in a preferred embodiment, the pressure in the etching chamber is adjusted to 5 mTorr, the nitrogen and oxygen are introduced into the chamber at 150 ml/min, and the etching time is 7 minutes.
S05: the pressure is 2-4 mTorr, the input of nitrogen and oxygen is 80-120 ml/min, and the etching time is 7-9 min.
In a preferred scheme, the pressure of the etching chamber is adjusted to 3 mTorr, the input amount of nitrogen and oxygen is 100 ml/min, and the etching time is 8 minutes.
And after forming a carbon simple substance or a carbon solid compound with a set thickness in the etching chamber, introducing a second etching gas to etch the warm sheet, and in the process of introducing the second etching gas, forming polymer deposition in different areas in the etching chamber by changing the pressure of the etching chamber. The thickness of the polymer deposit is greater than 2 microns. With respect to the polymer deposition thickness, reference may be made to the above description, where the polymer deposition thickness is the total film deposition thickness required by the process minus the thickness of the formed carbon simple substance or carbon-containing solid compound film. In this embodiment, the pressure of the etching chamber is relatively low (2 to 4 mtorr) before the second etching gas is introduced, the pressure of the etching chamber is increased to 45 to 55 mtorr before the second etching gas is introduced, and then the polymer layer covers different areas inside the etching chamber by gradually reducing the pressure of the etching chamber. In this embodiment, the following process parameters are sequentially adopted in the process of introducing the second etching gas:
s01: the pressure is 45-55 millitorr, the input amount of the trifluoromethane and the boron trichloride is 180-220 ml/min, and the etching time is 5-7 min;
in a preferable scheme, the pressure of the etching chamber is 50 millitorr, the input amount of the trifluoromethane and the boron trichloride is 200 ml/min, and the etching time is 6 min.
S02: the pressure is 25-35 millitorr, the input amount of trifluoromethane and boron trichloride is 180-220 ml/min, and the etching time is 4-6 min;
in a preferred scheme, the pressure of the etching chamber is adjusted to 30 mTorr, the input amount of the trifluoromethane and the boron trichloride is 200 ml/min, and the etching time is 5 minutes.
S03: the pressure is 8-12 millitorr, the input amount of trifluoromethane and boron trichloride is 180-220 ml/min, and the etching time is 5-7 min;
in a preferred scheme, the pressure of the etching chamber is adjusted to 10 millitorr, the input amount of the trifluoromethane and the boron trichloride is 200 ml/min, and the etching time is 6 min.
S04: the pressure is 4-6 mTorr, the input amount of trifluoromethane and boron trichloride is 130-170 ml/min, and the etching time is 6-8 min;
in a preferable scheme, the pressure of the etching chamber is adjusted to 5 millitorr, the input amount of trifluoromethane and boron trichloride is 150 ml/min, and the etching time is 7 min.
S05: the pressure is 2-4 millitorr, the input amount of trifluoromethane and boron trichloride is 80-120 ml/min, and the etching time is 7-9 min.
In a preferred scheme, the pressure of the etching chamber is adjusted to 3 mTorr, the input amount of the trifluoromethane and the boron trichloride is 100 ml/min, and the etching time is 8 minutes.
In another embodiment, the pressure of the etching chamber is gradually increased, when the first etching gas is used for etching the heater chip, the last pressure is 2-4 mTorr, and when the second etching gas is introduced, the pressure can be gradually increased on the basis of the pressure of 2-4 mTorr.
After the warming-up step is completed, the substrate can be etched, the method is particularly suitable for the situation of etching the sapphire substrate, and because the etching gas adopted for etching the sapphire substrate is also boron trichloride, the etching of the boron trichloride on the quartz window is effectively avoided.
Having described embodiments of the present invention, the foregoing description is intended to be exemplary, not exhaustive, and not limited to the embodiments disclosed. Many modifications and variations will be apparent to those of ordinary skill in the art without departing from the scope and spirit of the described embodiments.
Claims (10)
1. A seasoning method for a semiconductor etching process, the method comprising:
introducing a first etching gas into the etching chamber, and etching the warm-up sheet arranged in the etching chamber; the first etching gas can react with the warm-up sheet to form a carbon-containing byproduct and cover the surface of a quartz window in the etching chamber;
and introducing a second etching gas into the etching chamber to etch the heater chip to form an etching by-product and cover the inner wall of the etching chamber.
2. A warming-up method according to claim 1, wherein the first etching gas is a mixed gas containing oxygen and nitrogen.
3. A warming-up method according to claim 1, wherein during the introduction of the first etching gas, the pressure of the etching chamber and the introduction amount of the first etching gas are gradually decreased until the carbon-containing by-products of the first predetermined thickness are formed on both the inner wall of the etching chamber and the quartz window.
4. A warming method according to claim 3, wherein the first predetermined thickness is 3-30 μm.
5. A warming-up method according to claim 3, wherein the following process parameters are adopted in sequence during the introduction of the first etching gas:
the pressure is 45-55 mTorr, the introduction amount of the first etching gas is 180-220 ml/min, and the etching time is 5-7 min;
the pressure is 25-35 millitorr, the introduction amount of the first etching gas is 180-220 ml/min, and the etching time is 4-6 min;
the pressure is 8-12 mTorr, the first etching gas is introduced in an amount of 180-220 ml/min, and the etching time is 5-7 min;
the pressure is 4-6 mTorr, the first etching gas is introduced in an amount of 130-170 ml/min, and the etching time is 6-8 min;
the pressure is 2-4 mTorr, the input amount of the first etching gas is 80-120 ml/min, and the etching time is 7-9 min.
6. A warming method according to claim 1, further comprising:
and before introducing a second etching gas into the etching chamber, increasing the pressure of the etching chamber.
7. A warming-up method according to claim 1, wherein the second etching gas is a gas containing boron trichloride or a mixed gas containing trifluoromethane and boron trichloride.
8. A warming-up method according to claim 1, wherein in the course of introducing the second etching gas, the pressure of the etching chamber and the introduced amount of the second etching gas are gradually decreased until etching by-products of a second predetermined thickness are formed on the inner wall of the etching chamber.
9. A warming method according to claim 8, wherein the second predetermined thickness is greater than 2 μm.
10. A warming-up method according to claim 8, wherein the following process parameters are adopted in sequence during the introduction of the second etching gas:
the pressure is 45-55 mTorr, the introduction amount of the second etching gas is 180-220 ml/min, and the etching time is 5-7 min;
the pressure is 25-35 mTorr, the introduction amount of the second etching gas is 180-220 ml/min, and the etching time is 4-6 min;
the pressure is 8-12 mTorr, the introduction amount of the second etching gas is 180-220 ml/min, and the etching time is 5-7 min;
the pressure is 4-6 mTorr, the second etching gas is introduced in an amount of 130-170 ml/min, and the etching time is 6-8 min;
the pressure is 2-4 mTorr, the second etching gas is introduced in an amount of 80-120 ml/min, and the etching time is 7-9 min.
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| CN116884884B (en) * | 2023-09-06 | 2023-11-24 | 粤芯半导体技术股份有限公司 | Warming-up sheet for grid side wall ICP etching, preparation method thereof and warming-up method |
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| TW200540981A (en) * | 2004-06-02 | 2005-12-16 | Lam Res Co Ltd | Seasoning method for etch chamber |
| CN103515176A (en) * | 2012-06-19 | 2014-01-15 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Seasoning method and etching method |
| CN106504996A (en) * | 2015-09-07 | 2017-03-15 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Method of warming up and the lithographic method of substrate |
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| US6360754B2 (en) * | 1998-03-16 | 2002-03-26 | Vlsi Technology, Inc. | Method of protecting quartz hardware from etching during plasma-enhanced cleaning of a semiconductor processing chamber |
| TW439143B (en) * | 1999-03-01 | 2001-06-07 | United Microelectronics Corp | Method to prevent first-wafer effect |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200540981A (en) * | 2004-06-02 | 2005-12-16 | Lam Res Co Ltd | Seasoning method for etch chamber |
| CN103515176A (en) * | 2012-06-19 | 2014-01-15 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Seasoning method and etching method |
| CN106504996A (en) * | 2015-09-07 | 2017-03-15 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Method of warming up and the lithographic method of substrate |
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