CN111366275A - Nano pressure sensor and preparation method thereof - Google Patents

Nano pressure sensor and preparation method thereof Download PDF

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CN111366275A
CN111366275A CN202010172385.5A CN202010172385A CN111366275A CN 111366275 A CN111366275 A CN 111366275A CN 202010172385 A CN202010172385 A CN 202010172385A CN 111366275 A CN111366275 A CN 111366275A
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nano
pressure sensor
functional layer
nanometer
film
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CN111366275B (en
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原会雨
刘睿超
孙启军
刘皓
崔俊艳
高金星
杨道媛
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Zhengzhou University
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00Measuring force or stress, in general
    • G01L1/20Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
    • G01L1/22Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y15/00Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00Manufacture or treatment of nanostructures
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/3411Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials
    • C03C17/3417Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials all coatings being oxide coatings

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  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
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  • Measuring Fluid Pressure (AREA)

Abstract

The invention provides a nanometer pressure sensor which comprises two conductive substrates and a nanometer functional layer positioned between the two conductive substrates, wherein the nanometer functional layer covers the surface of one conductive substrate. And obtaining the nanometer pressure sensor. The nanometer pressure sensor has higher sensitivity in a low-pressure area, can greatly reduce the pressure threshold of the pressure-resistant pressure sensor based on the construction of nanometer materials, has the advantages of high sensitivity and simple preparation, and has wide application prospect in the fields of intelligent wearable equipment, robot electronic skin, Internet of things and the like.

Description

Nano pressure sensor and preparation method thereof
Technical Field
The invention belongs to the technical field of sensors, and particularly relates to a nano pressure sensor and a preparation method thereof.
Background
The pressure sensor is an electronic element with wide application, and the application relates to various industries such as traffic, water conservancy, aerospace and the like. With the development of emerging technologies such as internet of things, wearable intelligent equipment and robots, the requirements of people on miniaturization, high flexibility and high sensitivity of the pressure sensor are continuously improved. At present, a pressure-resistant pressure sensor can work only by needing a large enough pressure threshold value (more than or equal to 100kPa), so that the sensitivity is poor, and the use experience is seriously influenced in the application fields of touch screens and the like. Even though the piezoresistive pressure sensor has the advantages of low power consumption, simple preparation and the like, due to the defects, the application of the piezoresistive pressure sensor in the fields of touch screens and the like is severely limited, and the piezoresistive pressure sensor is gradually replaced by a capacitive screen.
Disclosure of Invention
The technical problem to be solved by the invention is to provide a nano pressure sensor and a preparation method thereof aiming at the defects of the prior art, the nano pressure sensor has higher sensitivity in a low pressure area, is constructed based on a nano material, can greatly reduce the pressure threshold of a pressure resistance type pressure sensor, and has the advantages of high sensitivity and simple preparation.
In order to solve the technical problems, the invention adopts the technical scheme that: a nanometer pressure sensor is characterized by comprising two conductive substrates and a nanometer functional layer positioned between the two conductive substrates, wherein the nanometer functional layer covers the surface of one of the conductive substrates; the nanometer pressure sensor belongs to a pressure resistance type pressure sensor.
Preferably, the nanometer functional layer is a two-dimensional nanometer film; the two-dimensional nano-film is a discontinuous semiconductor or a discontinuous insulator material.
Preferably, the two-dimensional nano film is a titanium oxide nano sheet film or a niobium oxide nano sheet film.
Preferably, the conductive substrate comprises an ITO glass sheet, an FTO glass sheet or a PET/ITO sheet.
The invention also provides a method for preparing the nano pressure sensor, which comprises the following steps:
covering a two-dimensional nano material on the surface of a conductive substrate through a nanotechnology, forming a nano functional layer on the surface of the conductive substrate, assembling the conductive substrate covered with the nano functional layer and the conductive substrate not covered with the nano functional layer, and clamping the nano functional layer between the two conductive substrates to obtain the nano pressure sensor.
Preferably, the nanotechnology includes a Langmuir-Blodgett plating deposition, spin coating, self-assembly or electrophoresis method.
Compared with the prior art, the invention has the following advantages:
the nanometer pressure sensor has higher sensitivity in a low-pressure area, can greatly reduce the pressure threshold of the pressure-resistant pressure sensor based on the construction of nanometer materials, has the advantages of high sensitivity and simple preparation, and has wide application prospect in the fields of intelligent wearable equipment, robot electronic skin, Internet of things and the like.
The present invention will be described in further detail with reference to the accompanying drawings and examples.
Drawings
FIG. 1 is a block diagram of the present invention.
Fig. 2 is a topographical view of a nano-functional layer titanium oxide nanosheet film of example 1.
Fig. 3 is a scanning electron microscope image of a nano-functional layer titanium oxide nanosheet thin film of example 1.
Fig. 4 is a signal output diagram of the nano pressure sensor of example 1 under different stress and periodic stress conditions.
Figure 5 is a topographical view of the nano-functional layer niobium oxide nanosheet film of example 2.
Figure 6 is a scanning electron microscope image of a nano-functional layer niobium oxide nanosheet film of example 2.
Fig. 7 is a signal output diagram of the nano pressure sensor of example 2 under different stress and periodic stress conditions.
Detailed Description
Example 1
As shown in fig. 1, the nano pressure sensor of this embodiment includes two conductive substrates 1 and a nano functional layer 2 located between the two conductive substrates 1, where the nano functional layer 2 covers a surface of one of the conductive substrates 1; the nanometer pressure sensor belongs to a pressure resistance type pressure sensor.
The nanometer functional layer 2 is a two-dimensional nanometer film; the two-dimensional nano-film is a discontinuous semiconductor or a discontinuous insulator material.
The two-dimensional nano film is a titanium oxide nano sheet film.
The conductive substrate 1 is a PET/ITO sheet; the ITO/PET is formed by plating a layer of ITO conductive material on a flexible PET material, and has low cost and deformation; in this embodiment, the conductive substrate 1 may also be an ITO glass sheet or an FTO glass sheet.
The embodiment also provides a method for preparing the nano pressure sensor, which comprises the following steps:
two-dimensional nano material titanium oxide Ti0.87O2 0.52-(TO) the nanosheet suspension is covered on the surface of a conductive substrate 1 by a nanotechnology Langmuir-Blodgett (LB) coating deposition method, a nanometer functional layer 2 is formed on the surface of the conductive substrate 1, the conductive substrate 1 covered with the nanometer functional layer 2 is assembled with the conductive substrate 1 not covered with the nanometer functional layer 1, and the nanometer functional layer 2 is clamped between the two conductive substrates 1 TO obtain a nanometer pressure sensor; the nanotechnology described in this embodiment may also be implemented by spin coating, self-assembly, or electrophoresis.
Titanium oxide Ti0.87O2 0.52-The preparation method of The (TO) nanosheet suspension comprises the following steps:
(1) precursor lithium potassium titanate K0.8Ti1.73Li0.27O4Preparation of (KTLO): 1.0 to 2.0g of sodium carbonate K2CO30.1 to 0.5g of lithium carbonate Li2CO32.0 to 5.0g of TiO 22Grinding and mixing in an agate mortar for 3 hours, then putting into an alumina crucible and calcining at 800 ℃ for 1 hour, naturally cooling, grinding into powder, putting into the alumina crucible again and calcining at 1200 ℃ for 24 hours, naturally cooling and grinding into powder to obtain the lithium potassium titanate K0.8Ti1.73Li0.27O4
(2) Proton form H1.07T1.73O4Preparation of (HTO): 3g of potassium lithium titanate K are taken0.8Ti1.73Li0.27O4Placing the solution into 300mL hydrochloric acid solution with the concentration of 1mol/L, stirring the solution on a magnetic stirrer for 3 days, replacing the hydrochloric acid solution with new hydrochloric acid solution with the concentration of 1mol/L every day, then performing suction filtration and cleaning on the acid-treated lithium potassium titanate by deionized water until the supernatant is neutral, naturally drying the solution at room temperature to finally obtain the proton form H1.07T1.73O4(HTO);
(3) Titanium oxide Ti0.87O2 0.52-Preparation of (TO) nanoplate suspension: adding 0.1g of HTO powder and 1.689mL of tetrabutylammonium hydroxide solution with the mass fraction of 40% into a beaker, adding water to 20mL, and stirring on a magnetic stirrer for one day to obtain titanium oxide Ti0.87O2 0.52-(TO) nanoplate suspension.
The Langmuir-Blodgett (LB) coating film deposition method comprises the following steps:
(4) preparing a conductive substrate, namely placing a rectangular PET/ITO sheet cut into a length of 1.5cm × and a width of 1cm as the conductive substrate in deionized water for ultrasonic cleaning treatment for 3 minutes, then placing the conductive substrate in absolute ethyl alcohol for ultrasonic cleaning treatment for 3 minutes, taking out the conductive substrate, and wiping the surface of the conductive substrate clean by using mirror wiping paper;
(5) LB film drawing preparation: absorbing and stirring the titanium oxide Ti for 1 to 3 days0.87O2 0.52-(TO) nanosheet suspension 2mL was placed in 500mL of a beakerAdding water into the cup to dilute the solution to 500mL, standing for 15 minutes, then sucking the solution at the middle upper part by using an injector, injecting the solution into an LB groove, washing a platinum hanging piece by using absolute ethyl alcohol, burning at a high temperature, cooling, placing the platinum hanging piece at a proper height of an LB film drawing machine, clamping the cleaned conductive substrate on a clamp, and immersing the conductive substrate into the solution, wherein the clamp is not contacted with the solution;
(6) LB film drawing: setting the film drawing speed to be 0.01-0.5 mm/s and the sliding barrier speed to be 0.01-0.5 mm/s, and respectively drawing the film at the positions of 20%, 40%, 60%, 80% and 100% of the maximum surface pressure to finally obtain the titanium oxide nanosheet film.
The morphology of the titanium oxide nanosheet thin film in this example is shown in fig. 2, the height information along the oblique lines of fig. 2a is shown in fig. 2b, and fig. 2b shows that the thickness of the titanium oxide nanosheet thin film is about 1.5 nm.
Fig. 3 is a planar scanning electron microscope image of a titanium oxide nanosheet film on a conductive substrate, wherein the left side of the image is the conductive substrate, and the right side of the image is the titanium oxide nanosheet film, as can be seen from the image, the titanium oxide nanosheet film is a discontinuous film.
The uncoated conductive substrate and the conductive substrate coated with the film-coated nano functional layer of the present example were assembled to form a nano pressure sensor, and a test was performed, and the response of the pressure sensor to pressure is shown in fig. 4. The prepared sensor has good pressure response at 2.9kPa, has high sensitivity, and has good stability at stress intervals of 2.9kPa and 6.9 kPa. Compared with the pressure threshold of 100kPa of a common pressure resistance type pressure sensor, the pressure threshold of the pressure resistance type pressure sensor is greatly reduced by the nanometer pressure sensor of the embodiment.
The nanometer functional layer 2, namely the titanium oxide nanosheet film in the embodiment has electrical insulation, and the film has discontinuous characteristics, so that the titanium oxide nanosheet film has an adjustable conductive channel, the prepared nanometer pressure sensor has the advantages that the nanometer functional layer 2 isolates the two conductive substrates 1 under the condition that the titanium oxide nanosheet film is not extruded, and the conductive substrates 1 at the two sides of the nanometer functional layer 2 can be conducted under the condition that the titanium oxide nanosheet film is extruded (along with other condition changes, such as light, heat, chemical and other changes for excitation), so that an electrical signal is generated.
The sensitivity range (usable detection range) of the nano pressure sensor of the embodiment can regulate and control the parameters of the nano functional layer 2.
Example 2
As shown in fig. 1, the nano pressure sensor of this embodiment includes two conductive substrates 1 and a nano functional layer 2 located between the two conductive substrates 1, where the nano functional layer 2 covers a surface of one of the conductive substrates 1; the nanometer pressure sensor belongs to a pressure resistance type pressure sensor.
The nanometer functional layer 2 is a two-dimensional nanometer film; the two-dimensional nano-film is a discontinuous semiconductor or a discontinuous insulator material.
The two-dimensional nano film is a niobium oxide nano sheet film.
The conductive substrate 1 is a PET/ITO sheet; the ITO/PET is formed by plating a layer of ITO conductive material on a flexible PET material, and has low cost and deformation; in this embodiment, the conductive substrate 1 may also be an ITO glass sheet or an FTO glass sheet.
The embodiment also provides a method for preparing the nano pressure sensor, which comprises the following steps:
two-dimensional nano material titanium oxide Ti0.87O2 0.52-(TO) the nanosheet suspension is covered on the surface of a conductive substrate 1 by a nanotechnology Langmuir-Blodgett (LB) coating deposition method, a nanometer functional layer 2 is formed on the surface of the conductive substrate 1, the conductive substrate 1 covered with the nanometer functional layer 2 is assembled with the conductive substrate 1 not covered with the nanometer functional layer 1, and the nanometer functional layer 2 is clamped between the two conductive substrates 1 TO obtain a nanometer pressure sensor; the nanotechnology described in this embodiment may also be implemented by spin coating, self-assembly, or electrophoresis.
CaNb1.5O5 0.5-The preparation method of the (CNO) nanosheet suspension comprises the following steps:
(1) precursor potassium calcium niobate KCa2Nb3O10(KCNO) preparation. Adding 0.1-0.8 g of potassium carbonate K2CO31.0-1.9 g of calcium carbonate CaCO3,2.5~3.8g niobium pentoxide Nb2O5Grinding and mixing the materials in an agate mortar for 3 hours, then putting the materials into an alumina crucible and calcining the materials at 800 ℃ for 1 hour, naturally cooling the materials, grinding the materials into powder, putting the materials into the alumina crucible again and calcining the materials at 1200 ℃ for 12 hours, naturally cooling the materials and grinding the materials into powder;
(2) proton form HCa2Nb3O10Preparation of (HCNO): taking 3g of precursor potassium calcium niobate KCa2Nb3O10Placing the solution into 300mL hydrochloric acid solution with the concentration of 2mol/L, stirring the solution on a magnetic stirrer for 3 days, replacing the hydrochloric acid solution with new hydrochloric acid solution with the concentration of 2mol/L every day, then performing suction filtration and cleaning on the acid-treated lithium potassium titanate by deionized water until supernatant is neutral, and naturally drying the supernatant at room temperature to obtain proton-form HCa2Nb3O10(HCNO);
(3)CaNb1.5O5 0.5-Preparation of (CNO) nanoplate suspension: 0.1g of the protic form HCa is taken2Nb3O10Putting (HCNO) powder and 0.238mL of tetrabutylammonium hydroxide solution with the mass fraction of 40% into a beaker, adding water to 20mL, putting the beaker on a magnetic stirrer and stirring the beaker for 3 hours to obtain CaNb1.5O5 0.5-Preparation of (CNO) nanosheet suspension.
The Langmuir-Blodgett (LB) coating film deposition method comprises the following steps:
(4) preparing a conductive substrate, namely placing a rectangular PET/ITO sheet cut into a length of 1.5cm × and a width of 1cm as the conductive substrate in deionized water for ultrasonic cleaning treatment for 3 minutes, then placing the conductive substrate in absolute ethyl alcohol for ultrasonic cleaning treatment for 3 minutes, taking out the conductive substrate, and wiping the surface of the conductive substrate clean by using mirror wiping paper;
(5) LB film drawing preparation: absorbing and stirring CaNb for 3-12 hours1.5O5 0.5-Placing 2mL of (CNO) nanosheet suspension into a 500mL beaker, adding water to dilute to 500mL, standing for 15 minutes, then sucking the solution at the middle upper part by using a syringe, injecting the solution into an LB (Langmuir-Blodgett) groove, washing a platinum hanging piece by using absolute ethyl alcohol, burning at high temperature, cooling, placing at a proper height of an LB film drawing machine, clamping the cleaned conductive substrate in a clamping wayThe conductive substrate is immersed into the solution, and the clamp is not contacted with the solution;
(6) LB film drawing: setting the film drawing speed to be 0.01-0.5 mm/s and the sliding barrier speed to be 0.01-0.5 mm/s, and respectively drawing the film at the positions of 20%, 40%, 60%, 80% and 100% of the maximum surface pressure to finally obtain the niobium oxide nanosheet film.
The morphology of the niobium oxide nanosheet thin film in this example is shown in fig. 5, the height information along the diagonal lines of fig. 5a is shown in fig. 5b, and fig. 5b shows that the thickness of the niobium oxide nanosheet thin film is about 2.5 nm. As can be seen from fig. 6, the thin film of niobium oxide nanosheet is a discontinuous thin film.
The uncoated conductive substrate and the conductive substrate coated with the film nano functional layer of the embodiment are assembled to form a nano pressure sensor, and a test is performed, wherein the response of the pressure sensor under different pressure conditions is shown in fig. 7, the prepared sensor has good pressure response at 2.9kPa and high sensitivity, and the stability of the sensor in different stress intervals of 2.9kPa and 9.8kPa is better, and compared with the pressure threshold of a general pressure resistance type pressure sensor of 100kPa, the nano pressure sensor of the embodiment greatly reduces the pressure threshold of the pressure resistance type pressure sensor.
The nanometer functional layer 2, namely the titanium oxide nanosheet film in the embodiment has electrical insulation, and the film has discontinuous characteristics, so that the titanium oxide nanosheet film has an adjustable conductive channel, the prepared nanometer pressure sensor has the advantages that the nanometer functional layer 2 isolates the two conductive substrates 1 under the condition that the titanium oxide nanosheet film is not extruded, and the conductive substrates 1 at the two sides of the nanometer functional layer 2 can be conducted under the condition that the titanium oxide nanosheet film is extruded (along with other condition changes, such as light, heat, chemical and other changes for excitation), so that an electrical signal is generated.
The sensitivity range (usable detection range) of the nano pressure sensor of the embodiment can regulate and control the parameters of the nano functional layer 2.
The above description is only for the preferred embodiment of the present invention, and is not intended to limit the present invention in any way. Any simple modification, change and equivalent changes of the above embodiments according to the technical essence of the invention are still within the protection scope of the technical solution of the invention.

Claims (6)

1. A nanometer pressure sensor is characterized by comprising two conductive substrates (1) and a nanometer functional layer (2) positioned between the two conductive substrates (1), wherein the nanometer functional layer (2) covers the surface of one conductive substrate (1).
2. The nano pressure sensor according to claim 1, wherein the nano functional layer (2) is a two-dimensional nano thin film; the two-dimensional nano-film is a discontinuous semiconductor or a discontinuous insulator material.
3. The nano-pressure sensor according to claim 2, wherein the two-dimensional nano-film is a titanium oxide nano-sheet film or a niobium oxide nano-sheet film.
4. A nano-pressure sensor according to claim 1, characterized in that the conductive substrate (1) comprises an ITO glass sheet, an FTO glass sheet or a PET/ITO sheet.
5. A method of making a nano-pressure sensor according to any of claims 1 to 4, the method comprising:
covering a two-dimensional nano material on the surface of a conductive substrate (1) through a nanotechnology, forming a nano functional layer (2) on the surface of the conductive substrate (1), assembling the conductive substrate (1) covered with the nano functional layer (2) and the conductive substrate (1) not covered with the nano functional layer (1), and clamping the nano functional layer (2) between the two conductive substrates (1) to obtain the nano pressure sensor.
6. The method of claim 5, wherein the nanotechnology comprises Langmuir-Blodgett deposition, spin coating, self-assembly, or electrophoresis.
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112213005A (en) * 2020-10-13 2021-01-12 新余学院 Titanium dioxide/carbon dot composite film pressure sensor and preparation method thereof
CN113231277A (en) * 2021-04-21 2021-08-10 河南特思检测技术有限公司 Method for regulating and controlling working range of two-dimensional oxide nano pressure sensor

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107389234A (en) * 2017-07-19 2017-11-24 华中科技大学 A kind of piezoresistive transducer for making separation layer based on nano wire and preparation method thereof
CN107873081A (en) * 2014-07-18 2018-04-03 简·克莱姆 Method and apparatus for electrically carrying out power measurement by heat insulating lamina
CN208350249U (en) * 2018-05-10 2019-01-08 西安建筑科技大学 A kind of high sensitivity pliable pressure sensor
CN109387307A (en) * 2018-12-12 2019-02-26 深圳大学 A kind of flexibility stress sensor and preparation method thereof
CN110631743A (en) * 2019-09-30 2019-12-31 北京航空航天大学 Piezoresistive sensor and preparation method thereof

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107873081A (en) * 2014-07-18 2018-04-03 简·克莱姆 Method and apparatus for electrically carrying out power measurement by heat insulating lamina
CN107389234A (en) * 2017-07-19 2017-11-24 华中科技大学 A kind of piezoresistive transducer for making separation layer based on nano wire and preparation method thereof
CN208350249U (en) * 2018-05-10 2019-01-08 西安建筑科技大学 A kind of high sensitivity pliable pressure sensor
CN109387307A (en) * 2018-12-12 2019-02-26 深圳大学 A kind of flexibility stress sensor and preparation method thereof
CN110631743A (en) * 2019-09-30 2019-12-31 北京航空航天大学 Piezoresistive sensor and preparation method thereof

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
罗成: "褶皱的PPy薄膜/PVA纳米线隔离物的高性能压阻式传感器", 《中国优秀硕士学位论文全文数据库信息科技辑》 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112213005A (en) * 2020-10-13 2021-01-12 新余学院 Titanium dioxide/carbon dot composite film pressure sensor and preparation method thereof
CN112213005B (en) * 2020-10-13 2022-04-29 新余学院 Titanium dioxide/carbon dot composite film pressure sensor and preparation method thereof
CN113231277A (en) * 2021-04-21 2021-08-10 河南特思检测技术有限公司 Method for regulating and controlling working range of two-dimensional oxide nano pressure sensor

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