CN111346581A - Microwave film reaction unit - Google Patents

Microwave film reaction unit Download PDF

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Publication number
CN111346581A
CN111346581A CN201811576457.1A CN201811576457A CN111346581A CN 111346581 A CN111346581 A CN 111346581A CN 201811576457 A CN201811576457 A CN 201811576457A CN 111346581 A CN111346581 A CN 111346581A
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CN
China
Prior art keywords
reactor
film
microwave
wall
cavity
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CN201811576457.1A
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Chinese (zh)
Inventor
谭昊明
付其璋
陈和粲
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Shanghai Taichu Chemical Technology Co ltd
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Shanghai Taichu Chemical Technology Co ltd
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Priority to CN201811576457.1A priority Critical patent/CN111346581A/en
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/08Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J19/12Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electromagnetic waves
    • B01J19/122Incoherent waves
    • B01J19/126Microwaves

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  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)

Abstract

A microwave film reaction device comprises four parts, wherein the first part is a mechanical transmission device (1), and the second part is a microwave transmitting device (2); the third part is a film forming device (3); the fourth part is a cavity surrounded by the reactor wall (4); in the reaction device, a film forming device is arranged in a cavity of a wall city of a reactor, the film forming device (2) and/or the reactor wall (4) are moved by a mechanical transmission device, so that material liquid flows along the reactor wall in a film shape, and microwave irradiation is carried out on the flowing liquid to promote the chemical reaction to be accelerated.

Description

Microwave film reaction unit
Technical Field
The invention belongs to the field of novel chemical reactors. In particular to a novel reaction device which utilizes physical force to make reaction material liquid into a film to flow along the wall of a reactor through the movement of a film forming device part and a cavity of the wall of the reactor and promotes chemical reaction through microwaves.
Background
The microwave acts on the chemical reaction and has the characteristics of high speed, low energy consumption, high efficiency and environmental protection. The reaction speed of microwave promotion can reach more than 10000 times of that of common chemical reaction, and generally, the reaction needs dozens of hours and only needs a few minutes if the reaction is promoted by microwave. However, the microwave-assisted chemical reaction has the disadvantage that it is difficult to overcome, and generally speaking, the thickness of the liquid in the conventional reaction kettle is too large, and the microwave is absorbed by the surface of the liquid and hardly permeates into the liquid. More importantly, the reaction speed inside the reaction system is too high, and the heat inside the reaction system is difficult to remove from the inside of the system. Internal overheating can lead to sudden gasification of the system, presenting a significant safety risk. Although some of these solutions solve the problem by using microchannel reactors or tube reactors, the solutions have two disadvantages, one is that the microchannel reactor or tube reactor is clogged when the viscosity of the liquid becomes high, and the required pressure of the transfer pump exceeds the use range; another disadvantage is that the small molecule products produced by the microchannel or tube reactor are difficult to remove from the system.
Disclosure of Invention
The present invention provides a novel microwave thin film continuous reactor having advantages that a liquid material is made into a thin film by the movement of a film forming device and/or a reactor wall, a liquid film is made to flow along the reactor wall by centrifugal force, and the reaction liquid film is irradiated with microwaves. This reaction thus has several advantages:
1) because the cavity surrounded by the reaction wall and/or the movement of the film forming device, the reaction forms a film, the problem of the liquid thickness of the traditional kettle type reactor is solved, the microwave can be uniformly irradiated on the surface of the liquid film, the reaction speed is improved, and the utilization rate of the microwave is improved;
2) due to the generation of the liquid film, after microwave irradiation, the safety risk caused by sudden and large-amplitude gasification of liquid generated by internal overheating can not be generated;
3) because the liquid is of a membrane structure, the heat dissipation area is large, so that the reactor not only has the characteristic of rapid microwave reaction, but also has the characteristic of rapid heat dissipation, and the occurrence of reaction side reaction is controlled;
4) other evaporation devices can be arranged on the reactor, so that the problem that the small molecules of the original microwave tubular reactor and the original micro-channel reactor cannot escape from the system is solved;
5) more importantly, the flow rate of the liquid can be controlled by physical force, so that the limitation that the tubular reactor and the microchannel reactor cannot use high-viscosity fluid is avoided.
The invention discloses a microwave film reaction device, which comprises four parts, wherein the first part is a mechanical transmission device (1) which is a microwave transmitting device (2); the second part is a film forming device (3); the third part is a cavity surrounded by the reactor wall (4); in the reaction device, the film forming device is arranged in a cavity of a wall of a reactor in a city, the mechanical transmission device drives the film forming device (2) and/or the reactor wall (4) to move, so that material liquid flows in a film shape along the reactor wall, microwave irradiation is carried out on the flowing liquid to promote chemical reaction to be carried out in an accelerated manner, the device can avoid the reduction of reaction efficiency caused by the absorption effect of microwave due to the fact that the liquid is too thick in the traditional reaction kettle type microwave reactor, and meanwhile, the reaction is carried out in a film shape due to reaction, so that the safety risk caused by internal overheating is avoided.
A microwave thin film reactor, the film forming apparatus may have the following structure: 1) one is that the film-forming device is a scraper, the distance between the scraper and the reactor wall is 0.1mm-50mm, preferably 1mm-10mm (see figure 1); wherein, the scraper and/or the reactor can rotate, and the centrifugal force can make the material liquid rotate by utilizing the relative motion between the scraper and the reactor; 2) the second film forming device consists of a screw rod, the thread depth of the screw rod is between 0.1 and 50mm, preferably between 1 and 5mm, and the screw rod and/or the reactor wall can rotate; the centrifugal force generated by the relative movement between the screw and the reactor wall can make the material liquid rotate. (see FIG. 2) there are many similar film forming apparatuses, and this can be achieved by moving the material liquid along the reactor wall as a thin film by physical force.
A microwave film reactor has a cylindrical, conic, truncated cone, semi-spherical or semi-ellipsoidal cavity on its wall.
In the microwave thin film reactor, the microwave emitting device can be arranged inside the cavity formed by the reactor wall (3), can also be arranged outside the cavity formed by the reactor wall (3), and can be arranged inside and outside the cavity at the same time. When the reactor wall is permeable to microwave material, the microwave emitting means may be mounted on the inside of the reactor wall at the same time.
The reaction device can be used independently for batch reaction, can also be used in series to form a continuous reaction device, and can also be used together with other tubular reactors and microchannel reactors to achieve the effect that one plus one is more than two. The reaction apparatus may be further connected to a reflux reactor, a vacuum distillation apparatus or the like.
It is this advantage that a large number of organic chemical reactions can be carried out in the reactor.
Drawings
FIG. 1 is a scraped surface microwave film reactor:
wherein:
1. is a mechanical transmission device;
2. for microwave generating devices, may be waveguides
3. Is a scraper
4. Wall of reactor
FIG. 2 shows a screw-type microwave thin film reactor
Wherein:
1. mechanical transmission device
2. As microwave emitting devices
3. Is a reactor
4. Position screw rod
5. Being threads
Detailed Description
In order that those skilled in the art may fully understand the basic principles and operation of the apparatus of the present invention, the present invention will be described in conjunction with the apparatus of fig. 1 and 2. Of course, the structure of the present invention is not limited to the structure disclosed in fig. 1 or fig. 2, and those skilled in the art can design other reaction devices having the same principle by the teaching given by the structure of fig. 1 or fig. 2.
Example 1: in this embodiment, the mechanical stirring device (1) has a cylindrical cavity surrounded by the reactor wall, and the central stirring rod has its wave-guiding structure attached thereto, and the wave-guiding opening is directed from the stirring rod to the reactor wall. The stirring structure is provided with a scraper which moves spirally along with the stirring rod, and the distance between the scraper and the wall of the reactor is 5mm (shown in figure 1).
The operation process is as follows: the liquid of the reaction material enters the reaction kettle tangentially, the liquid of the reaction material is driven by the scraper to be a film to be coated on the inner surface of the wall of the reactor due to the high-speed movement of the scraper, the microwave irradiates the liquid surface from the waveguide tube, the reaction is rapidly carried out, and the liquid of the reaction material descends spirally on the wall of the reactor due to the action of gravity. The small molecule compound produced by the reaction can be carried out of the reaction device through the cavity of the reaction wall in various ways. The reaction is realized rapidly, and the problem of overheating of microwave reaction is avoided.
Example 2: in this embodiment, the reactor wall forms a cylindrical cavity, and the film-forming means is a cylinder having a shape close to the cylindrical cavity, and the cylinder has a spiral recess, one end of which is connected to the mechanical transmission means and the other end of which is directed to the outlet of the cavity of the reactor wall. The shaft end is horizontal to the axis of the reactor, and the film forming device rotates along the axis to push the reaction material liquid to advance. The reactor wall is transparent to microwaves and is externally provided with a microwave generating device. (FIG. 2)
The reaction mass liquid enters the spiral of the film forming device through the reactor wall and spirally advances along the reactor wall and the grooves of the film forming device due to the rotating centrifugal force. The wall of the reactor is made of a material which can be penetrated by microwaves, and the microwaves penetrate through the wall of the reactor and irradiate the material liquid.
Example 3: the structure is similar to that of example 2, except that the reactor wall and the film forming apparatus may be moved in the same direction or in opposite directions.
Example 4: the structure is similar to that of example 2 or example 3, except that grooves are also formed in the reactor wall.
Example 5: the structure is similar to that of example 1, and the reactor wall is provided with a groove with a certain depth.
Example 6: the structure is similar to that of the embodiment 2, except that the groove on the film forming device is directed to the outlet of the reactor wall along the film forming device, and the liquid flows in the direction of the outlet along the axial movement of the reactor wall in the groove.
The same embodiments will be numerous and the concept of the invention can be practiced as long as the movement of the reactant feed along the reactor wall is achieved in a film-like manner by the relative movement of the film-forming means and the reactor wall.

Claims (10)

1. A microwave thin film reaction apparatus, comprising: a first part of mechanical transmission device (1), a second part of microwave transmitting device (2); the third part is a film forming device (3); the fourth part is a cavity surrounded by the reactor wall (4); in the reaction device, a film forming device is arranged in a cavity of a wall city of a reactor, the film forming device (2) and/or the reactor wall (4) are moved by a mechanical transmission device, so that material liquid flows along the reactor wall in a film shape, and microwave irradiation is carried out on the flowing liquid to promote the chemical reaction to be accelerated.
2. The microwave thin film reaction device according to claim 1, wherein the movement is a rotational movement.
3. A microwave thin-film reactor device as claimed in claim 1 or claim 2, said reactor wall (4) enclosing a hollow cavity, said film-forming means (3) being a plate with an edge close to the inner surface of the reactor wall.
4. A microwave thin film reactor device as claimed in claim 1 or claim 2, said reactor wall (4) defining a hollow cavity, said film forming means having the same shape as the shape defined by the inner surface of said cavity and having an outer edge adjacent the reactor wall.
5. A microwave thin-film reactor device according to any one of claims 3 to 4, wherein the distance between the edge of the film-forming means (3) and the inner surface of the cavity of the reactor wall (4) is in the range of 0.01mm to 100mm, preferably 0.1mm to 5.0 mm.
6. A microwave thin film reactor as claimed in claim 4, wherein said film forming means (3) has a spiral continuous concave portion with a predetermined cross section on the outer surface thereof.
7. A microwave thin film reactor apparatus as claimed in claim 6, wherein the depth of said continuous concave portion is in the range of 0.01mm to 100mm, preferably 0.1 to 5.0 mm.
8. The microwave thin-film reactor apparatus as claimed in claim 1, wherein the reactor wall (4) forms a cavity, characterized in that the cavity is cylindrical, truncated conical, spherical, hemispherical, or ellipsoidal.
9. The microwave thin-film reactor according to any one of claims 1 to 8, wherein said microwave emitting means is inside and/or outside the cavity formed by said reactor wall (3).
10. A microwave thin film reactor as claimed in claim 9, wherein the reactor wall is made of a material transparent to microwaves.
CN201811576457.1A 2018-12-22 2018-12-22 Microwave film reaction unit Pending CN111346581A (en)

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Application Number Priority Date Filing Date Title
CN201811576457.1A CN111346581A (en) 2018-12-22 2018-12-22 Microwave film reaction unit

Publications (1)

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CN111346581A true CN111346581A (en) 2020-06-30

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Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1181502A (en) * 1966-03-02 1970-02-18 Radiation Res Corp Polymerising by Electrical Discharge.
CN101733061A (en) * 2008-11-07 2010-06-16 李柏荣 Spiral conveying reaction device with microwave heating
CN201770510U (en) * 2010-02-23 2011-03-23 却力挥 Device utilizing microwave catalytic oxidation to treat industrial waste water
CN202105450U (en) * 2011-05-18 2012-01-11 华南理工大学 Scraping plate type microwave vacuum concentration equipment
CN102470336A (en) * 2010-05-17 2012-05-23 R3融合公司 Continuous processing reactors and methods of using same
CN103752028A (en) * 2014-01-23 2014-04-30 武汉大学 Microwave wiped film type molecular distiller with thin film evaporator function and method for generating fatty acid methyl ester by distiller
CN107794067A (en) * 2016-09-05 2018-03-13 中国石油化工股份有限公司 A kind of microwave reaction device

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1181502A (en) * 1966-03-02 1970-02-18 Radiation Res Corp Polymerising by Electrical Discharge.
CN101733061A (en) * 2008-11-07 2010-06-16 李柏荣 Spiral conveying reaction device with microwave heating
CN201770510U (en) * 2010-02-23 2011-03-23 却力挥 Device utilizing microwave catalytic oxidation to treat industrial waste water
CN102470336A (en) * 2010-05-17 2012-05-23 R3融合公司 Continuous processing reactors and methods of using same
CN202105450U (en) * 2011-05-18 2012-01-11 华南理工大学 Scraping plate type microwave vacuum concentration equipment
CN103752028A (en) * 2014-01-23 2014-04-30 武汉大学 Microwave wiped film type molecular distiller with thin film evaporator function and method for generating fatty acid methyl ester by distiller
CN107794067A (en) * 2016-09-05 2018-03-13 中国石油化工股份有限公司 A kind of microwave reaction device

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