CN111342801A - Bulk acoustic wave resonator with trench, filter, and electronic device - Google Patents
Bulk acoustic wave resonator with trench, filter, and electronic device Download PDFInfo
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- CN111342801A CN111342801A CN201811560215.3A CN201811560215A CN111342801A CN 111342801 A CN111342801 A CN 111342801A CN 201811560215 A CN201811560215 A CN 201811560215A CN 111342801 A CN111342801 A CN 111342801A
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- 230000008878 coupling Effects 0.000 description 2
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/175—Acoustic mirrors
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
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Abstract
Bulk acoustic wave resonators with trenches, filters and electronic devices. The invention relates to a bulk acoustic wave resonator comprising: a substrate; an acoustic mirror; a bottom electrode disposed on an upper side of the substrate; a top electrode; and a piezoelectric layer disposed over the bottom electrode and between the bottom electrode and the top electrode, wherein: the overlapped area of the acoustic mirror, the bottom electrode, the piezoelectric layer and the top electrode in the thickness direction of the substrate is an effective area of the resonator; the resonator also includes at least one trench extending around the active area. The trenches may be disposed on a lower side or an upper side of the piezoelectric layer; or the trench may be disposed at an upper side or a lower side of the bottom electrode. The invention also relates to a filter with the resonator and an electronic device with the filter or the resonator.
Description
Technical Field
Embodiments of the present invention relate to the field of semiconductors, and in particular, to a bulk acoustic wave resonator, a filter having the resonator, an electronic device having the filter, and a method of increasing parallel impedance of the resonator.
Background
Currently, rf front-end filters composed of bulk acoustic wave resonators are widely used in rf communication systems, and such filters generally have superior electrical properties, such as low insertion loss, steep transition band, large power capacity, strong anti-electrostatic discharge capability, and process technology compatible with IC technology, thus being suitable for large-scale low-cost manufacturing. The quality of the filter is closely related to each performance index of the resonator.
The bulk acoustic wave resonator generally has two resonant frequencies, a frequency point with the minimum impedance is defined as a series resonant frequency fs, the corresponding impedance is defined as a series impedance Rs, a frequency point with the maximum impedance is defined as a parallel resonant frequency fp, the corresponding impedance is defined as a parallel impedance Rp, and the medium-voltage and medium-voltage conversion efficiency of the resonator is measured through an effective electromechanical coupling coefficient. In general, the series resonance frequency of the resonators determines the center frequency of the filter, while the effective electromechanical coupling coefficients of the resonators determine the maximum bandwidth achievable by the filter, and the series and parallel impedances of the resonators determine the pass-band insertion loss and return loss. In general, the higher the parallel impedance Rp of the resonator, the lower the series impedance Rs, and the better the passband insertion loss of the corresponding filter. Therefore, how to improve the performance of the resonator, especially the parallel impedance Rp of the resonator, is an important and fundamental issue in the design of the filter.
Disclosure of Invention
The invention provides a technical scheme for improving the parallel impedance of a bulk acoustic wave resonator by arranging a groove.
According to an aspect of an embodiment of the present invention, there is provided a bulk acoustic wave resonator including: a substrate; an acoustic mirror; a bottom electrode disposed on an upper side of the substrate; a top electrode; and a piezoelectric layer disposed on an upper side of the bottom electrode and between the bottom electrode and the top electrode, wherein: the overlapped area of the acoustic mirror, the bottom electrode, the piezoelectric layer and the top electrode in the thickness direction of the substrate is an effective area of the resonator; the resonator also includes at least one trench extending around the active area edge.
Optionally, the groove is an annular groove.
Optionally, the lateral distance of the groove from the acoustic mirror remains constant.
Optionally, the at least one groove comprises one groove.
Optionally, the trench is disposed on the upper side of the substrate and completely covers the bottom electrode. Optionally, the depth H of the trench satisfies: h is more than or equal to 0.1 mu m and less than or equal to 0.6 mu m; and the distance from the groove to the acoustic mirror is D, the width of the groove is W, wherein: d is more than or equal to 1 mu m and less than or equal to 1.8 mu m, and W is more than or equal to 1.2 mu m and less than or equal to 2.5 mu m.
Optionally, the trench is disposed on the upper side of the substrate and partially covers the bottom electrode. Or alternatively, the trench is disposed on the upper side of the substrate and spaced apart from the bottom electrode. Further, the depth H of the trench satisfies the condition: h is more than or equal to 0.6 mu m and less than or equal to 1.1 mu m, or H is more than or equal to 1.7 mu m and less than or equal to 2.3 mu m. Further, H is 0.7 μm or more and 0.8 μm or less, or H is 1.9 μm or more and 2.1 μm or less.
Optionally, the at least one groove comprises two grooves.
Further, the two grooves are arranged on the upper side of the substrate and are completely covered by the bottom electrode.
Optionally, the two trenches are disposed on the upper side of the substrate and both spaced apart from the bottom electrode.
Optionally, one of the two trenches is completely covered by the bottom electrode, and the other trench is partially covered by the bottom electrode or is spaced apart from the bottom electrode. Optionally, one of the two trenches is partially covered by the bottom electrode, and the other trench is spaced apart from the bottom electrode.
Optionally, the groove is arranged on the lower side or the upper side of the piezoelectric layer; or the trench is disposed on an upper side or a lower side of the bottom electrode.
Optionally, the at least one trench comprises a plurality of trench segments, the plurality of trench segments being spaced apart from one another and arranged along and around the active area.
According to another aspect of embodiments of the present invention, there is provided a filter including the bulk acoustic wave resonator described above.
According to a further aspect of an embodiment of the present invention, there is provided an electronic device including the above-described filter or the above-described resonator.
The invention also relates to a method for improving the parallel impedance of the bulk acoustic wave resonator, which comprises the following steps: at least one annular trench is formed on the upper side of the substrate of the resonator around the active area of the resonator.
Drawings
These and other features and advantages of the various embodiments of the disclosed invention will be better understood from the following description taken in conjunction with the accompanying drawings, in which like reference characters designate like parts throughout, and in which:
FIG. 1A is a schematic top view of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention, wherein only one annular trench is provided;
FIG. 1B is a cross-sectional view of the bulk acoustic wave resonator of FIG. 1A taken along the direction A-A' in accordance with an exemplary embodiment of the present invention;
FIG. 1C is a graph of an exemplary relationship of the bulk acoustic wave resonator of FIG. 1B with respect to the depth of the trench (i.e., annular pool height H) and the parallel impedance of the resonator;
figure 1D is a cross-sectional view of a bulk acoustic wave resonator according to another exemplary embodiment of the present invention;
FIG. 1E is a graph of an exemplary relationship of the bulk acoustic wave resonator of FIG. 1D with respect to the depth of the trench (i.e., annular pool height H) and the parallel impedance of the resonator;
figure 1F is a cross-sectional view of a bulk acoustic wave resonator according to yet another exemplary embodiment of the present invention;
FIG. 1G is a graph of an exemplary relationship of the bulk acoustic wave resonator of FIG. 1F with respect to the depth of the trench (i.e., annular pool height H) and the parallel impedance of the resonator;
FIG. 2A is a schematic top view of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention, wherein only two annular grooves are provided;
FIG. 2B is a cross-sectional view of the bulk acoustic wave resonator of FIG. 2A taken along the direction B-B' in accordance with an exemplary embodiment of the present invention;
figure 2C is a cross-sectional view of a bulk acoustic wave resonator according to yet another exemplary embodiment of the present invention;
fig. 2D is a cross-sectional view of a bulk acoustic wave resonator according to yet another exemplary embodiment of the present invention.
Detailed Description
The technical scheme of the invention is further specifically described by the following embodiments and the accompanying drawings. In the specification, the same or similar reference numerals denote the same or similar components. The following description of the embodiments of the present invention with reference to the accompanying drawings is intended to explain the general inventive concept of the present invention and should not be construed as limiting the invention.
A bulk acoustic wave resonator according to an embodiment of the present invention is described below with reference to the drawings.
FIG. 1A is a schematic top view of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention; fig. 1B is a cross-sectional view of the bulk acoustic wave resonator of fig. 1A taken along direction a-a' according to an exemplary embodiment of the present invention.
Referring to fig. 1A and 1B, the bulk acoustic wave resonator includes a bottom electrode 120, a piezoelectric layer 130, a top electrode 140, and a first annular groove 150. The bulk acoustic wave resonator comprises a substrate 100 and an acoustic mirror 110, which is located on the upper surface of the substrate or embedded in the substrate, and which in fig. 1B is constituted by a cavity embedded in the substrate, but any other acoustic mirror structure such as a bragg reflector is equally suitable.
The bulk acoustic wave resonator further comprises a bottom electrode 120, a piezoelectric layer 130, a top electrode 140. The bottom electrode is deposited on the upper surface of the acoustic mirror and covers the acoustic mirror. The two side end portions of the bottom electrode 120 may be etched to form slopes outside the acoustic mirror, and the slopes may be stepped, vertical, or other similar structures. The piezoelectric layer 130 has a first end and a corresponding second end and a middle portion and is located on the bottom electrode, and the two end portions extend in opposite directions to the substrate. A top electrode 140 is deposited over the piezoelectric layer 130. Annular grooves 150 are located on either side of the acoustic mirror 110, spaced from the acoustic mirror, and in the non-sloped region at the bottom of the bottom electrode.
The area where the top electrode, the piezoelectric layer, the bottom electrode and the cavity overlap in the thickness direction is the effective area of the resonator, i.e. the area d2 in the figure. When the acoustic wave leaks from the effective area and propagates in the surrounding medium in the form of traveling wave, when the annular groove 150 is added, because an air interface is introduced and the acoustic impedance of air is 0, the equivalent acoustic impedances of the corresponding areas, namely d1 and d3 in the figure, are lower than those of the two adjacent sides, so that two impedance mismatched interfaces are formed, the acoustic wave can form reflection at the two interfaces, and a part of the leaked acoustic wave energy can return to the resonant cavity d2, so that the parallel impedance Rp is increased.
The depth of the annular groove may be the same as or different from the depth of the cavity 110. Referring to fig. 1B, definition H is the depth of the annular trench, W is the width of the annular trench, D is the distance of the inner edge of the annular trench from the edge of the cavity, and E is the distance of the bottom electrode beyond the cavity. The finite element method is adopted to perform two-dimensional simulation on the structure, and the simulation result is shown in fig. 1C. In the simulation, setting E as 5um, and calculating W ═ 1um and D ═ 1um respectively; w is 1um, D is 2 um; w2 um, D1 um, W2 um, D1 um. In fig. 1C, the abscissa is the depth H of the annular trench and the ordinate is the parallel resistance Rp. The case where H is 0 is the case where there is no trench; as can be seen from fig. 1C, in the case of W ═ 2um and D ═ 1um, the parallel impedance Rp can reach 2477 with an increase of about 250 (about 11.2%) when H ═ 0.3 um.
Accordingly, in an exemplary embodiment according to the present invention, for the case where the trench is completely covered by the bottom electrode, the depth H of the trench satisfies: h is more than or equal to 0.1 mu m and less than or equal to 0.6 mu m; and the distance from the groove to the acoustic mirror is D, the width of the groove is W, wherein: d is more than or equal to 1 mu m and less than or equal to 1.8 mu m, and W is more than or equal to 1.2 mu m and less than or equal to 2.5 mu m. In further embodiments, 0.1 μm H0.6 μm. Furthermore, D is more than or equal to 1 mu m and less than or equal to 1.2 mu m, and W is more than or equal to 1.8 mu m and less than or equal to 2.0 mu m.
An annular trench 150 may also be provided outside the bottom electrode 120, as shown in FIG. 1D. The structure of fig. 1D was simulated, and the simulation result is shown in fig. 1E. In the simulation, setting E as 5um, and calculating W ═ 1um and D ═ 5um respectively; w is 1um, D is 7 um; three cases of W being 1um and D being 9 um. The abscissa in the figure is the depth H of the annular trench and the ordinate is the parallel resistance Rp. The case of H — 0 is the case without the annular groove; in the case where W is 1um and D is 7um, when H is 0.7um, the parallel impedance Rp reaches 2929, increasing by about 700 (about 31.5%). In the case of W ═ 1um and D ═ 9um, when H ═ 2um, the parallel impedance Rp reached 2977, increasing by about 750 (33.7%).
Optionally, the end of the bottom electrode 120 is located above the annular trench 150, but does not completely cover the annular trench 150, as shown in fig. 1F. The structure of fig. 1F was simulated, and the simulation result is shown in fig. 1G. In the simulation, setting E as 5um, and calculating W as 1um and D as 4.25um respectively; w is 1um, D is 4.5 um; three cases of W being 1um and D being 4.75 um. The abscissa in the figure is the depth H of the annular trench and the ordinate is the parallel resistance Rp. The case of H — 0 is the case without the annular groove; in the case of W ═ 1um and D ═ 4.5um, when H ═ 0.8um, the parallel impedance Rp reached 3015, increasing by about 790 (about 35.6%). Comparing the simulation results of fig. 1C, 1E, and 1G, it can be seen that when the trench width is fixed, such as W ═ 1um, the best effect of raising the parallel resistance Rp can be obtained when the ring-shaped trench crosses the bottom electrode end (in the case of the third structure).
Accordingly, in an exemplary embodiment according to the present invention, the depth H of the trench satisfies the condition for the case where the trench is not covered or not completely covered by the bottom electrode: h is more than or equal to 0.6 mu m and less than or equal to 1.1 mu m, or H is more than or equal to 1.7 mu m and less than or equal to 2.3 mu m. Furthermore, H is more than or equal to 0.7 mu m and less than or equal to 0.8 mu m, or H is more than or equal to 1.9 mu m and less than or equal to 2.1 mu m.
The above description is given by way of example of a single trench, and the following description is given by way of example of a resonator according to the invention with reference to fig. 2A-2D and with reference to two trenches.
As shown in fig. 2A-2D, the bulk acoustic wave resonator includes a bottom electrode 220, a piezoelectric layer 230, a top electrode 240, a first annular groove 250, and a second annular groove 260.
Figure 2B illustrates an embodiment of a bulk acoustic wave resonator in cross-section taken along top view B-B' of figure 2A. The bulk acoustic wave resonator comprises a substrate 200 and an acoustic mirror 210, which is located on the upper surface of the substrate or embedded inside the substrate, and in fig. 2B the acoustic mirror is formed as a cavity embedded in the substrate, but any other acoustic mirror structure such as a bragg reflector is equally suitable.
The bulk acoustic wave resonator further comprises a bottom electrode 220, a piezoelectric layer 230, a top electrode 240. The bottom electrode is deposited on the upper surface of the acoustic mirror and covers the acoustic mirror. The two side end portions of the bottom electrode 220 may be etched to form slopes outside the acoustic mirror, and may be stepped, vertical, or have other similar configurations. The piezoelectric layer 230 has a first end and a corresponding second end and a middle portion and is located on the bottom electrode, and the two end portions extend in opposite directions to the substrate. A top electrode 240 is deposited over the piezoelectric layer 230. The first and second annular grooves 250 and 260 are located on either side of the acoustic mirror 210, spaced from the acoustic mirror, and in a non-sloped region at the bottom of the bottom electrode.
By providing a plurality of annular grooves, more acoustic impedance mismatched interfaces can be formed than in the embodiment shown in fig. 1A, so that the leaked acoustic waves are reflected back to the active area multiple times to enhance the parallel impedance Rp of the resonator.
The first and second annular trenches 250 and 260 may not be all disposed in the non-sloped region of the bottom electrode. For example, the first annular trench 250 is disposed outside the bottom electrode 220, and the second annular trench 260 is disposed in a sloped region at the bottom of the bottom electrode, as shown in fig. 2C.
Alternatively, the end of the bottom electrode 220 is located above the first annular trench 250 but does not cover the first annular trench 250, and the second annular trench 260 is disposed below the bottom electrode 220, as shown in fig. 2D.
Although only two grooves are shown in fig. 2A-2D, three or more grooves may be provided as desired and are within the scope of the present invention.
Based on the above, the present invention provides a bulk acoustic wave resonator, comprising:
a substrate 100 or 200;
the acoustic mirror 110 or 210;
a bottom electrode 120 or 220 disposed on an upper side of the substrate 100 or 200;
the top electrode 140 or 240; and
a piezoelectric layer 130 or 230 disposed on the upper side of the bottom electrode and between the bottom electrode and the top electrode,
wherein:
the overlapped area of the acoustic mirror, the bottom electrode, the piezoelectric layer and the top electrode in the thickness direction of the substrate is an effective area of the resonator;
the resonator further includes a trench 150 or 250 or 260 that extends around the edge of the active area (in fig. 1A, which may be considered to correspond, for example, to the boundary area d2 of the top electrode 140).
In the invention, a groove structure is processed on a substrate at one side or multiple edges of an effective area of the resonator, and in practice, by selecting a proper groove size, sound waves leaked into the substrate can be effectively reflected, so that the parallel impedance Rp value of the resonator is effectively improved.
The groove is of a micro-groove structure. In the drawings of the present invention, the groove is an annular groove. However, the trench may also be a plurality of trench segments spaced apart from one another and disposed along and around the active area. For example, the trench segments may be one or more trench segments disposed on one or more sides of the active area of the polygon shown in fig. 1A.
In the present invention, as shown in the drawings, in an alternative embodiment, the lateral distance of the groove from the acoustic mirror is kept constant.
In one exemplary embodiment of the present invention, the trenches are all formed on the substrate. However, the present invention is not limited thereto, and the groove may be formed at a lower surface of the piezoelectric layer opposite to the base or disposed at an upper surface of the piezoelectric layer. Or the trench is disposed on an upper side or a lower side of the bottom electrode.
In the present invention, the trench or the trench segment may be filled with other materials, or may not be filled with other materials, which are within the protection scope of the present invention.
In an alternative embodiment of the invention, one of the two trenches is completely covered by the bottom electrode and the other trench is partially covered by the bottom electrode or spaced apart from the bottom electrode. Optionally, one of the two trenches is partially covered by the bottom electrode, and the other trench is spaced apart from the bottom electrode.
In the present invention, "upper side" in the orientation means a side distant from the substrate in the thickness direction of the resonator, and "lower side" means a side close to the substrate in the thickness direction of the resonator.
Based on the above, embodiments of the present invention also relate to a filter including the bulk acoustic wave resonator described above.
Embodiments of the invention also relate to an electronic device comprising a filter or resonator as described above. It should be noted that the electronic device herein includes, but is not limited to, intermediate products such as a radio frequency front end and a filtering and amplifying module, and terminal products such as a mobile phone, WIFI, and an unmanned aerial vehicle.
Correspondingly, the invention also provides a method for improving the parallel impedance of the bulk acoustic wave resonator, which comprises the following steps: at least one annular trench is formed on the upper side of the substrate of the resonator around the active area of the resonator.
Although embodiments of the present invention have been shown and described, it would be appreciated by those skilled in the art that changes may be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the claims and their equivalents.
Claims (20)
1. A bulk acoustic wave resonator comprising:
a substrate;
an acoustic mirror;
a bottom electrode disposed on an upper side of the substrate;
a top electrode; and
a piezoelectric layer disposed on the upper side of the bottom electrode and between the bottom electrode and the top electrode,
wherein:
the overlapped area of the acoustic mirror, the bottom electrode, the piezoelectric layer and the top electrode in the thickness direction of the substrate is an effective area of the resonator;
the resonator also includes at least one trench extending around the active area edge.
2. The resonator of claim 1, wherein:
the groove is an annular groove.
3. The resonator of claim 2, wherein:
the lateral distance of the trench from the acoustic mirror remains constant.
4. The resonator of any of claims 1-3, wherein:
the at least one groove comprises one groove.
5. The resonator of claim 4, wherein:
the groove is arranged on the upper side of the substrate and completely covers the bottom electrode.
6. The resonator of claim 5, wherein:
the depth H of the groove satisfies: h is more than or equal to 0.1 mu m and less than or equal to 0.6 mu m; and is
A distance D from the trench to the acoustic mirror, a width W of the trench, wherein: d is more than or equal to 1 mu m and less than or equal to 1.8 mu m, and W is more than or equal to 1.2 mu m and less than or equal to 2.5 mu m.
7. The resonator of claim 4, wherein:
the groove is arranged on the upper side of the substrate and partially covers the bottom electrode.
8. The resonator of claim 4, wherein:
the trench is disposed on the upper side of the substrate and spaced apart from the bottom electrode.
9. The resonator of claim 7 or 8, wherein:
the depth H of the groove satisfies the condition: h is more than or equal to 0.6 mu m and less than or equal to 1.1 mu m, or H is more than or equal to 1.7 mu m and less than or equal to 2.3 mu m.
10. The resonator of claim 9, wherein:
h is more than or equal to 0.7 mu m and less than or equal to 0.8 mu m, or H is more than or equal to 1.9 mu m and less than or equal to 2.1 mu m.
11. The resonator of any of claims 1-3, wherein:
the at least one groove includes two grooves.
12. The resonator of claim 11, wherein:
the two grooves are arranged on the upper side of the substrate and are completely covered by the bottom electrode.
13. The resonator of claim 11, wherein:
the two grooves are arranged on the upper side of the substrate and are separated from the bottom electrode.
14. The resonator of claim 11, wherein:
one of the two trenches is completely covered by the bottom electrode and the other trench is partially covered by the bottom electrode or spaced apart from the bottom electrode.
15. The resonator of claim 11, wherein:
one of the two trenches is partially covered by the bottom electrode and the other trench is spaced apart from the bottom electrode.
16. The resonator of any of claims 1-3, wherein:
the groove is arranged on the lower side or the upper side of the piezoelectric layer; or
The trench is disposed on an upper side or a lower side of the bottom electrode.
17. The resonator of any of claims 1-3, wherein:
the at least one trench includes a plurality of trench segments spaced apart from one another and disposed along and around the active area.
18. A filter comprising the bulk acoustic wave resonator according to any one of claims 1-17.
19. An electronic device comprising a filter according to claim 18 or a resonator according to any of claims 1-17.
20. A method of increasing the parallel impedance of a bulk acoustic wave resonator, comprising the steps of:
at least one annular trench is formed on the upper side of the substrate of the resonator around the active area of the resonator.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811560215.3A CN111342801A (en) | 2018-12-19 | 2018-12-19 | Bulk acoustic wave resonator with trench, filter, and electronic device |
| PCT/CN2019/121094 WO2020125353A1 (en) | 2018-12-19 | 2019-11-27 | Grooved bulk acoustic wave resonator, filter and electronic device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811560215.3A CN111342801A (en) | 2018-12-19 | 2018-12-19 | Bulk acoustic wave resonator with trench, filter, and electronic device |
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| CN111342801A true CN111342801A (en) | 2020-06-26 |
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| CN201811560215.3A Pending CN111342801A (en) | 2018-12-19 | 2018-12-19 | Bulk acoustic wave resonator with trench, filter, and electronic device |
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| WO (1) | WO2020125353A1 (en) |
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| CN112039487A (en) * | 2020-08-06 | 2020-12-04 | 诺思(天津)微系统有限责任公司 | Bulk acoustic wave resonator with heat conduction structure, manufacturing method thereof, filter and electronic equipment |
| CN113258899A (en) * | 2021-05-18 | 2021-08-13 | 苏州汉天下电子有限公司 | Film bulk acoustic resonator and manufacturing method thereof |
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| US20160308509A1 (en) * | 2011-02-28 | 2016-10-20 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Acoustic resonator device with at least one air-ring and frame |
| US20150280688A1 (en) * | 2014-03-28 | 2015-10-01 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Acoustic resonator device including trench for providing stress relief |
| CN111193488A (en) * | 2018-11-14 | 2020-05-22 | 天津大学 | Heat dissipation structure, bulk acoustic wave resonator with heat dissipation structure, filter and electronic equipment |
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| CN112039487A (en) * | 2020-08-06 | 2020-12-04 | 诺思(天津)微系统有限责任公司 | Bulk acoustic wave resonator with heat conduction structure, manufacturing method thereof, filter and electronic equipment |
| CN112039487B (en) * | 2020-08-06 | 2021-08-10 | 诺思(天津)微系统有限责任公司 | Bulk acoustic wave resonator with heat conduction structure, manufacturing method thereof, filter and electronic equipment |
| CN113258899A (en) * | 2021-05-18 | 2021-08-13 | 苏州汉天下电子有限公司 | Film bulk acoustic resonator and manufacturing method thereof |
| CN113258899B (en) * | 2021-05-18 | 2024-06-04 | 苏州汉天下电子有限公司 | Film bulk acoustic resonator and manufacturing method thereof |
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