CN111330627A - Processing technology of semiconductor photocatalyst material - Google Patents
Processing technology of semiconductor photocatalyst material Download PDFInfo
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- CN111330627A CN111330627A CN202010229422.1A CN202010229422A CN111330627A CN 111330627 A CN111330627 A CN 111330627A CN 202010229422 A CN202010229422 A CN 202010229422A CN 111330627 A CN111330627 A CN 111330627A
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- 239000011941 photocatalyst Substances 0.000 title claims abstract description 95
- 239000000463 material Substances 0.000 title claims abstract description 65
- 239000004065 semiconductor Substances 0.000 title claims abstract description 28
- 238000005516 engineering process Methods 0.000 title claims abstract description 18
- 238000012545 processing Methods 0.000 title claims abstract description 17
- 229910052797 bismuth Inorganic materials 0.000 claims abstract description 151
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims abstract description 128
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims abstract description 127
- LSGOVYNHVSXFFJ-UHFFFAOYSA-N vanadate(3-) Chemical compound [O-][V]([O-])([O-])=O LSGOVYNHVSXFFJ-UHFFFAOYSA-N 0.000 claims abstract description 126
- 229910052582 BN Inorganic materials 0.000 claims abstract description 115
- 229910052684 Cerium Inorganic materials 0.000 claims abstract description 92
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims abstract description 92
- 239000002131 composite material Substances 0.000 claims abstract description 56
- 229910052751 metal Inorganic materials 0.000 claims abstract description 39
- 239000002184 metal Substances 0.000 claims abstract description 39
- 239000002135 nanosheet Substances 0.000 claims abstract description 36
- -1 bismuth vanadate compound Chemical class 0.000 claims abstract description 30
- 238000001816 cooling Methods 0.000 claims description 47
- 238000005303 weighing Methods 0.000 claims description 43
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 36
- 238000009210 therapy by ultrasound Methods 0.000 claims description 28
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 27
- 238000002156 mixing Methods 0.000 claims description 27
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 26
- 238000002360 preparation method Methods 0.000 claims description 24
- 238000001035 drying Methods 0.000 claims description 23
- 238000003756 stirring Methods 0.000 claims description 20
- 239000008367 deionised water Substances 0.000 claims description 19
- 229910021641 deionized water Inorganic materials 0.000 claims description 19
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 18
- 238000001354 calcination Methods 0.000 claims description 18
- 239000002243 precursor Substances 0.000 claims description 18
- 238000010438 heat treatment Methods 0.000 claims description 17
- 238000006243 chemical reaction Methods 0.000 claims description 14
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 12
- 229910017604 nitric acid Inorganic materials 0.000 claims description 12
- 238000001914 filtration Methods 0.000 claims description 11
- 229910003206 NH4VO3 Inorganic materials 0.000 claims description 10
- 238000005406 washing Methods 0.000 claims description 10
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 9
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Chemical compound NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 claims description 9
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 claims description 9
- 239000004327 boric acid Substances 0.000 claims description 9
- 239000004202 carbamide Substances 0.000 claims description 9
- 238000001704 evaporation Methods 0.000 claims description 9
- 229910052757 nitrogen Inorganic materials 0.000 claims description 9
- 229910001868 water Inorganic materials 0.000 claims description 7
- 230000001699 photocatalysis Effects 0.000 abstract description 18
- 230000003197 catalytic effect Effects 0.000 abstract description 4
- 230000002035 prolonged effect Effects 0.000 abstract description 3
- 230000009471 action Effects 0.000 abstract description 2
- 239000000243 solution Substances 0.000 description 69
- 229910002915 BiVO4 Inorganic materials 0.000 description 19
- 238000003760 magnetic stirring Methods 0.000 description 8
- 238000005457 optimization Methods 0.000 description 7
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- 230000006798 recombination Effects 0.000 description 7
- RBTBFTRPCNLSDE-UHFFFAOYSA-N 3,7-bis(dimethylamino)phenothiazin-5-ium Chemical compound C1=CC(N(C)C)=CC2=[S+]C3=CC(N(C)C)=CC=C3N=C21 RBTBFTRPCNLSDE-UHFFFAOYSA-N 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
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- 230000015556 catabolic process Effects 0.000 description 4
- 238000006731 degradation reaction Methods 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 239000003570 air Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000000593 degrading effect Effects 0.000 description 2
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- 238000011068 loading method Methods 0.000 description 2
- 238000002715 modification method Methods 0.000 description 2
- 238000013033 photocatalytic degradation reaction Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
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- 231100000956 nontoxicity Toxicity 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000007146 photocatalysis Methods 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
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- 229910052724 xenon Inorganic materials 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J27/00—Catalysts comprising the elements or compounds of halogens, sulfur, selenium, tellurium, phosphorus or nitrogen; Catalysts comprising carbon compounds
- B01J27/24—Nitrogen compounds
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J35/00—Catalysts, in general, characterised by their form or physical properties
- B01J35/30—Catalysts, in general, characterised by their form or physical properties characterised by their physical properties
- B01J35/39—Photocatalytic properties
-
- C—CHEMISTRY; METALLURGY
- C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F1/00—Treatment of water, waste water, or sewage
- C02F1/30—Treatment of water, waste water, or sewage by irradiation
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- C—CHEMISTRY; METALLURGY
- C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F2101/00—Nature of the contaminant
- C02F2101/30—Organic compounds
- C02F2101/308—Dyes; Colorants; Fluorescent agents
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- C—CHEMISTRY; METALLURGY
- C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F2101/00—Nature of the contaminant
- C02F2101/30—Organic compounds
- C02F2101/38—Organic compounds containing nitrogen
-
- C—CHEMISTRY; METALLURGY
- C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F2305/00—Use of specific compounds during water treatment
- C02F2305/10—Photocatalysts
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Abstract
The invention discloses a processing technology of a semiconductor photocatalyst material, wherein the composite photocatalyst material comprises cerium metal, bismuth vanadate and hexagonal boron nitride, and the composite photocatalyst material takes the hexagonal boron nitride as a carrier, and the hexagonal boron nitride is loaded with the bismuth vanadate doped with the cerium metal; the processing technology of the composite photocatalyst material comprises the following steps: preparing bismuth vanadate; preparing a cerium/bismuth vanadate compound; preparing hexagonal boron nitride nanosheets; preparing a cerium/bismuth vanadate/hexagonal boron nitride composite photocatalyst; in the composite photocatalyst material, the bismuth vanadate photocatalyst is doped with metal cerium and loaded on the hexagonal boron nitride carrier, and the combination of photoproduction electrons and holes of the bismuth vanadate photocatalyst is greatly inhibited under the combined action of the metal cerium and the hexagonal boron nitride carrier, so that the service life of the photoproduction electrons-holes is effectively prolonged, and the photocatalytic activity of the bismuth vanadate photocatalyst is improved; experimental results show that the composite photocatalyst material has good visible light catalytic performance.
Description
Technical Field
The invention relates to the technical field of photocatalytic materials, in particular to a processing technology of a semiconductor photocatalyst material.
Background
The modern industry brings great convenience to human life and also aggravates environmental pollution: various toxic and harmful pollutants are continuously accumulated, transferred and converted in water, air and soil, so that ecological balance is seriously damaged, and the health of human is harmed. Therefore, the treatment of environmental pollution becomes an urgent problem to be solved, the photocatalytic technology can degrade various pollutants in water and air, resource waste and secondary pollution are not caused, the research and development of semiconductor materials with high-efficiency catalytic activity become hot spots of domestic and foreign research due to the general attention and research of researchers.
Bismuth vanadate is a non-titanium dioxide-based semiconductor photocatalytic material, and has the advantages of no toxicity, good stability, narrow forbidden band width (about 2.4 eV), high visible light utilization rate and the like, and has proved to be a photocatalyst with good application prospect, and has attracted attention of numerous researchers in the fields of photocatalysis and water pollution treatment, but the improvement of the optical performance is seriously restricted by the defects of high recombination rate of photo-generated electron-hole pairs, large specific surface ratio, poor adsorption performance and the like of pure bismuth vanadate, so that the modification of the pure bismuth vanadate can effectively inhibit the recombination of the photo-generated electron-hole pairs of the bismuth vanadate, the improvement of the photocatalytic degradation performance becomes the focus of the researchers, the rare earth ion doped bismuth vanadate can inhibit the recombination of the photo-generated electron-hole pairs to a certain degree, and improve the photocatalytic activity of the bismuth vanadate, however, the single modification method has limited improvement on the photocatalytic efficiency of the bismuth vanadate.
Disclosure of Invention
The invention aims to provide a semiconductor photocatalyst material and a processing technology thereof, and aims to solve the problems in the prior art.
In order to achieve the purpose, the invention provides the following technical scheme:
a semiconductor photocatalyst material comprises metal cerium and bismuth vanadate, and is prepared by doping metal cerium into bismuth vanadate. Bismuth vanadate is a good visible light photocatalyst, but pure bismuth vanadate has the defects of high photoproduction electron-hole recombination rate, large specific surface area, poor adsorption performance and the like, so that the improvement of the photocatalytic performance of the pure bismuth vanadate is seriously restricted, the metal cerium doped bismuth vanadate can inhibit the recombination of photoproduction electrons and holes to a certain extent and improve the photocatalytic activity, but a single modification method has a limit on the improvement of the photocatalytic efficiency of the bismuth vanadate.
As optimization, the composite photocatalyst material also comprises hexagonal boron nitride, the hexagonal boron nitride is used as a carrier, and bismuth vanadate doped with metal cerium is loaded on the hexagonal boron nitride. The invention discloses a preparation method of a cerium/bismuth vanadate/hexagonal boron nitride composite photocatalyst, which is characterized in that hexagonal boron nitride is a layered material with a graphene-like structure, and has better thermal stability and chemical stability compared with a carbon material.
As optimization, the mass ratio of the cerium metal to the bismuth vanadate to the hexagonal boron nitride in the composite photocatalyst material is 0.1:3-5: 1-3. When the doping amount of the metal cerium is too much, the excessive metal cerium reacts with the bismuth vanadate to generate impurities which cover the surface of the bismuth vanadate, so that the relative content and effective area of the bismuth vanadate are reduced, and the photocatalytic efficiency is reduced; when the doping amount of the metal cerium is too small, the composite photocatalyst has fewer point positions for capturing photoproduction electrons, and the survival time of the electrons and holes is shorter, so that the photocatalytic activity is reduced, and the catalytic activity of the composite photocatalyst is strongest only at the optimal doping amount; when the amount of the hexagonal boron nitride is too low, the transfer of electrons is not facilitated, when the amount of the hexagonal boron nitride is too much, a small part of a conduction band and a valence band of the hexagonal boron nitride is overlapped, and the forbidden band width is zero, so the hexagonal boron nitride can also absorb visible light, and the excessive hexagonal boron nitride can hinder the bismuth vanadate from absorbing the visible light.
A processing technology of a semiconductor photocatalyst material comprises the following steps:
(1) preparing bismuth vanadate;
(2) preparing a cerium/bismuth vanadate compound;
(3) preparing hexagonal boron nitride nanosheets;
(4) and (3) preparing the cerium/bismuth vanadate/hexagonal boron nitride composite photocatalyst.
As optimization, the processing technology of the semiconductor photocatalyst material comprises the following steps:
(1) weighing Bi (NO)3)3·5H2Dissolving O in nitric acid solution to obtain solution A, and weighing NH4VO3Dissolving the bismuth vanadate solution in a sodium hydroxide solution to obtain a solution B, sequentially adding the solution A and the solution B into a reaction kettle for reaction, cooling, filtering, washing and drying to obtain bismuth vanadate;
(2) weighing the bismuth vanadate and Ce (NO) obtained in the step (1)3)3·6H2Placing O into a crucible, adding deionized water into the crucible, performing ultrasonic treatment, uniformly mixing, placing the crucible into an oven for drying, then placing the crucible into a muffle furnace for calcining, and cooling to obtain a cerium/bismuth vanadate compound;
(3) preparing hexagonal boron nitride nanosheets:
(a) weighing boric acid and urea, dissolving in deionized water, performing ultrasonic treatment, uniformly mixing, performing constant-temperature magnetic stirring, and evaporating the solution to dryness to obtain a precursor;
(b) putting the precursor obtained in the step (a) into a crucible, putting the crucible into a tube furnace, introducing nitrogen, carrying out temperature programming, and cooling to obtain hexagonal boron nitride powder;
(c) carrying out heat treatment on the hexagonal boron nitride powder obtained in the step (b), and cooling to obtain a hexagonal boron nitride nanosheet;
(4) and (3) weighing the hexagonal boron nitride nanosheet obtained in the step (3) and the cerium/bismuth vanadate compound obtained in the step (2), putting the hexagonal boron nitride nanosheet and the cerium/bismuth vanadate compound into a crucible, adding methanol into the crucible, performing ultrasonic treatment, uniformly mixing, putting the crucible into a muffle furnace, calcining, and cooling to obtain the cerium/bismuth vanadate/hexagonal boron nitride compound photocatalyst.
As optimization, the processing technology of the semiconductor photocatalyst material comprises the following steps:
(1) bismuth vanadate (BiVO)4) The preparation of (1): weighing Bi (NO)3)3·5H2Dissolving O in nitric acid solution, stirring, dissolving completely to obtain solution A, and weighing NH4VO3Dissolving in sodium hydroxide solution, stirring, completely dissolving to obtain solution B, sequentially adding the solution A and the solution B into a reaction kettle, reacting at 100-150 ℃ for 5-8h, naturally cooling to room temperature, filtering, washing with absolute ethyl alcohol, and drying at 60-80 ℃ for 10-12h to obtain bismuth vanadate;
(2) cerium/bismuth vanadate (Ce/BiVO)4) Preparation of the complex: weighing the bismuth vanadate and Ce (NO) obtained in the step (1)3)3·6H2Placing O into a crucible, adding deionized water into the crucible, performing ultrasonic treatment, uniformly mixing, placing the crucible into an oven, drying for 6-8h at 80-100 ℃, then placing the crucible into a muffle furnace, calcining for 3-5h at 600 ℃, and naturally cooling to room temperature to obtain a cerium/bismuth vanadate compound;
(3) preparing hexagonal boron nitride (h-BN) nanosheets:
(a) weighing boric acid and urea, dissolving in deionized water, performing ultrasonic treatment for 20-30min, dissolving completely, mixing uniformly, magnetically stirring at constant temperature of 60-80 deg.C, and evaporating the solution to dryness to obtain precursor;
(b) putting the precursor obtained in the step (a) into a crucible, putting the crucible into a tube furnace, introducing nitrogen for 20-30min, carrying out temperature programming, and naturally cooling to room temperature to obtain hexagonal boron nitride powder;
(c) carrying out heat treatment on the hexagonal boron nitride powder obtained in the step (b), and naturally cooling to room temperature to obtain a hexagonal boron nitride nanosheet;
(4) cerium/bismuth vanadate/hexagonal boron nitride (Ce/BiVO)4h-BN) composite photocatalyst preparation: weighing the hexagonal boron nitride nanosheet obtained in the step (3) and the cerium/bismuth vanadate compound obtained in the step (2), putting the hexagonal boron nitride nanosheet and the cerium/bismuth vanadate compound into a crucible, adding methanol into the crucible, performing ultrasonic treatment, uniformly mixing, putting the crucible into a muffle furnace, and calcining at 600-800 ℃ for 4 DEG CAnd naturally cooling to room temperature after 6h to obtain the cerium/bismuth vanadate/hexagonal boron nitride composite photocatalyst.
As optimization, the temperature rise condition in the step (b) is to raise the temperature to 800-1000 ℃ at the speed of 3-5 ℃/min, and keep the temperature for 5-8 h.
As optimization, the heat treatment in the step (c) is carried out under the conditions that the temperature is 800-.
As optimization, the mass concentration of the nitric acid solution and the sodium hydroxide solution in the step (1) is 2-6 mol/L.
Compared with the prior art, the invention has the beneficial effects that:
firstly, in the semiconductor photocatalyst material, in the cerium/bismuth vanadate/hexagonal boron nitride composite photocatalyst material, bismuth vanadate and hexagonal boron nitride are compounded, and as hexagonal boron nitride has high carrier mobility, photo-generated electrons on the surface of bismuth vanadate can be captured and rapidly transferred to a lamellar structure of hexagonal boron nitride, so that the photo-generated electron-hole pairs are effectively separated on one hand, and the captured electrons can be rapidly transferred to O adsorbed on the surface of the catalyst by the hexagonal boron nitride on the other hand2Molecule, generation O2And holes (h) in the valence band of bismuth vanadate+) Can trap the water molecules adsorbed on the surface of the catalyst to generate OH, O2OH and OH have strong oxidizing power and can mineralize pollutants partially or completely, so that the photocatalytic activity of the catalyst is enhanced, in addition, the unique monoatomic layer two-dimensional planar structure of the hexagonal boron nitride and a large amount of pi electrons on the surface of the hexagonal boron nitride can form pi-pi bond conjugation with the pollutants, so that more pollutants can be adsorbed, and the photocatalytic degradation efficiency of the catalyst is improved;
secondly, in the semiconductor photocatalyst material, cerium/bismuth vanadate/hexagonal boron nitride composite photocatalyst material, the doped Ce is Ce3+The cerium-doped bismuth vanadate can form a trap in the bismuth vanadateActive trapping centers of, Ce3+The recombination of photo-generated electrons and holes is inhibited by capturing the holes, so that the service life of the photo-generated electrons and the holes is effectively prolonged, and the photocatalytic activity is improved;
thirdly, the bismuth vanadate photocatalyst is doped with metal cerium and loaded on a hexagonal boron nitride carrier, and the bismuth vanadate photocatalyst and the hexagonal boron nitride carrier have combined action to greatly inhibit the recombination of photoproduction electrons and holes of the bismuth vanadate photocatalyst, so that the service life of the photoproduction electrons-holes is effectively prolonged, and the photocatalytic activity of the bismuth vanadate photocatalyst is improved.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example 1:
a semiconductor photocatalyst material comprises metal cerium, bismuth vanadate and hexagonal boron nitride, wherein the hexagonal boron nitride is used as a carrier of the composite photocatalyst material, bismuth vanadate doped with metal cerium is loaded on the hexagonal boron nitride, and the mass ratio of the metal cerium to the bismuth vanadate to the hexagonal boron nitride in the composite photocatalyst material is 0.1:3: 1.
A processing technology of a semiconductor photocatalyst material comprises the following steps:
(1) bismuth vanadate BiVO4The preparation of (1): 2.5g of Bi (NO) are weighed out3)3·5H2Dissolving O in 10ml of 2mol/L nitric acid solution, stirring, dissolving completely to obtain solution A, and weighing 0.6g of NH4VO3Dissolving in 10ml of 2mol/L sodium hydroxide solution, stirring, completely dissolving to obtain solution B, sequentially adding the solution A and the solution B into a reaction kettle, reacting for 5 hours at 100 ℃, naturally cooling to room temperature, filtering, washing with absolute ethyl alcohol, and drying for 10 hours at 60 ℃ to obtain bismuth vanadate;
(2) cerium/bismuth vanadate Ce/BiVO4Preparation of the complex: 3.0g of bismuth vanadate obtained in step (1) and 0.3g of Ce (NO) were weighed3)3·6H2Placing O into a crucible, adding 10ml of deionized water into the crucible, performing ultrasonic treatment, uniformly mixing, placing the crucible into a drying oven, drying for 6 hours at 80 ℃, then placing the crucible into a muffle furnace, calcining for 3 hours at 500 ℃, and naturally cooling to room temperature to obtain a cerium/bismuth vanadate compound;
(3) preparing hexagonal boron nitride h-BN nanosheets:
(a) weighing 0.2g of boric acid and 5g of urea, dissolving in 50ml of deionized water, performing ultrasonic treatment for 20min, completely dissolving and uniformly mixing, then performing magnetic stirring at a constant temperature of 60-80 ℃, and evaporating the solution to dryness to obtain a precursor;
(b) putting the precursor obtained in the step (a) into a crucible, putting the crucible into a tube furnace, introducing nitrogen for 20min, carrying out temperature programming, wherein the temperature programming condition is that the temperature is raised to 800 ℃ at the speed of 3 ℃/min, keeping the temperature for 5h, and naturally cooling to room temperature to obtain hexagonal boron nitride powder;
(c) carrying out heat treatment on the hexagonal boron nitride powder obtained in the step (b), wherein the heat treatment condition is that the temperature is 800 ℃ and the time is 4 hours, and naturally cooling to room temperature to obtain a hexagonal boron nitride nanosheet;
(4) cerium/bismuth vanadate/hexagonal boron nitride Ce/BiVO4The preparation method of the/h-BN composite photocatalyst comprises the following steps: and (3) weighing 1g of the hexagonal boron nitride nanosheet obtained in the step (3) and 3.1g of the cerium/bismuth vanadate compound obtained in the step (2), putting the hexagonal boron nitride nanosheet and the cerium/bismuth vanadate compound into a crucible, adding 10ml of methanol into the crucible, carrying out ultrasonic treatment, uniformly mixing, putting the crucible into a muffle furnace, calcining for 4 hours at 600 ℃, and naturally cooling to room temperature to obtain the cerium/bismuth vanadate/hexagonal boron nitride compound photocatalyst.
Example 2:
a semiconductor photocatalyst material comprises metal cerium, bismuth vanadate and hexagonal boron nitride, wherein the hexagonal boron nitride is used as a carrier of the composite photocatalyst material, bismuth vanadate doped with metal cerium is loaded on the hexagonal boron nitride, and the mass ratio of the metal cerium to the bismuth vanadate to the hexagonal boron nitride in the composite photocatalyst material is 0.1:3.5: 1.5.
A processing technology of a semiconductor photocatalyst material comprises the following steps:
(1) bismuth vanadate BiVO4The preparation of (1): weighing 3 Bi (NO)3)3·5H2Dissolving O in 15ml of 3mol/L nitric acid solution, stirring, dissolving completely to obtain solution A, and weighing 0.75g of NH4VO3Dissolving in 15ml of 3mol/L sodium hydroxide solution, stirring, completely dissolving to obtain solution B, sequentially adding the solution A and the solution B into a reaction kettle, reacting for 5.5h at 110 ℃, naturally cooling to room temperature, filtering, washing with absolute ethyl alcohol, and drying for 10.5h at 65 ℃ to obtain bismuth vanadate;
(2) cerium/bismuth vanadate Ce/BiVO4Preparation of the complex: 3.5g of bismuth vanadate obtained in step (1) and 0.4g of Ce (NO) were weighed3)3·6H2Placing O into a crucible, adding 15ml of deionized water into the crucible, performing ultrasonic treatment, uniformly mixing, placing the crucible into an oven, drying for 6.5 hours at 85 ℃, then placing the crucible into a muffle furnace, calcining for 3.5 hours at 520 ℃, and naturally cooling to room temperature to obtain a cerium/bismuth vanadate compound;
(3) preparing hexagonal boron nitride h-BN nanosheets:
(a) weighing 0.3g of boric acid and 6g of urea, dissolving in 80ml of deionized water, performing ultrasonic treatment for 22min, completely dissolving and uniformly mixing, then performing magnetic stirring at a constant temperature of 65 ℃, and evaporating the solution to dryness to obtain a precursor;
(b) putting the precursor obtained in the step (a) into a crucible, putting the crucible into a tubular furnace, introducing nitrogen for 22min, carrying out temperature programming, wherein the temperature programming condition is that the temperature is raised to 850 ℃ at the speed of 3.5 ℃/min, preserving the heat for 5.5h, and naturally cooling to room temperature to obtain hexagonal boron nitride powder;
(c) carrying out heat treatment on the hexagonal boron nitride powder obtained in the step (b), wherein the heat treatment condition is that the temperature is 850 ℃ and the time is 5 hours, and naturally cooling to room temperature to obtain a hexagonal boron nitride nanosheet;
(4) cerium/bismuth vanadate/hexagonal boron nitride Ce/BiVO4The preparation method of the/h-BN composite photocatalyst comprises the following steps: weighing 1.5g of the product obtained in step (3)And (3) placing the hexagonal boron nitride nanosheet and 3.6g of the cerium/bismuth vanadate compound obtained in the step (2) into a crucible, then adding 15ml of methanol into the crucible, carrying out ultrasonic treatment, uniformly mixing, placing the crucible into a muffle furnace, calcining for 4.5 hours at 650 ℃, and naturally cooling to room temperature to obtain the cerium/bismuth vanadate/hexagonal boron nitride composite photocatalyst.
Example 3:
a semiconductor photocatalyst material comprises metal cerium, bismuth vanadate and hexagonal boron nitride, wherein the hexagonal boron nitride is used as a carrier of the composite photocatalyst material, bismuth vanadate doped with metal cerium is loaded on the hexagonal boron nitride, and the mass ratio of the metal cerium to the bismuth vanadate to the hexagonal boron nitride in the composite photocatalyst material is 0.1:4: 2.
A processing technology of a semiconductor photocatalyst material comprises the following steps:
(1) bismuth vanadate BiVO4The preparation of (1): weighing 4 Bi (NO)3)3·5H2Dissolving O in 20ml of 4mol/L nitric acid solution, stirring, dissolving completely to obtain solution A, and weighing 0.5g of NH4VO3Dissolving in 20ml of 4mol/L sodium hydroxide solution, stirring, completely dissolving to obtain solution B, sequentially adding the solution A and the solution B into a reaction kettle, reacting at 130 ℃ for 6 hours, naturally cooling to room temperature, filtering, washing with absolute ethyl alcohol, and drying at 70 ℃ for 11 hours to obtain bismuth vanadate;
(2) cerium/bismuth vanadate Ce/BiVO4Preparation of the complex: weighing 4g of bismuth vanadate obtained in step (1) and 0.5g of Ce (NO)3)3·6H2Placing O into a crucible, adding 20ml of deionized water into the crucible, performing ultrasonic treatment, uniformly mixing, placing the crucible into a drying oven, drying for 7 hours at 90 ℃, then placing the crucible into a muffle furnace, calcining for 4 hours at 540 ℃, and naturally cooling to room temperature to obtain a cerium/bismuth vanadate compound;
(3) preparing hexagonal boron nitride h-BN nanosheets:
(a) weighing 0.6g of boric acid and 6g of urea, dissolving in 100ml of deionized water, performing ultrasonic treatment for 24min, completely dissolving and uniformly mixing, then performing magnetic stirring at a constant temperature of 70 ℃, and evaporating the solution to dryness to obtain a precursor;
(b) putting the precursor obtained in the step (a) into a crucible, putting the crucible into a tube furnace, introducing nitrogen for 24min, carrying out temperature programming, wherein the temperature programming condition is that the temperature is raised to 900 ℃ at the speed of 4 ℃/min, keeping the temperature for 7h, and naturally cooling to room temperature to obtain hexagonal boron nitride powder;
(c) carrying out heat treatment on the hexagonal boron nitride powder obtained in the step (b), wherein the heat treatment condition is that the temperature is 900 ℃ and the time is 6 hours, and naturally cooling to room temperature to obtain a hexagonal boron nitride nanosheet;
(4) cerium/bismuth vanadate/hexagonal boron nitride Ce/BiVO4The preparation method of the/h-BN composite photocatalyst comprises the following steps: weighing 2g of the hexagonal boron nitride nanosheet obtained in the step (3) and 4.1g of the cerium/bismuth vanadate compound obtained in the step (2), putting the hexagonal boron nitride nanosheet and the cerium/bismuth vanadate compound into a crucible, adding 20ml of methanol into the crucible, carrying out ultrasonic treatment, uniformly mixing, putting the crucible into a muffle furnace, calcining for 5 hours at 700 ℃, and naturally cooling to room temperature to obtain the cerium/bismuth vanadate/hexagonal boron nitride compound photocatalyst.
Example 4:
a semiconductor photocatalyst material comprises metal cerium, bismuth vanadate and hexagonal boron nitride, wherein the hexagonal boron nitride is used as a carrier of the composite photocatalyst material, bismuth vanadate doped with metal cerium is loaded on the hexagonal boron nitride, and the mass ratio of the metal cerium to the bismuth vanadate to the hexagonal boron nitride in the composite photocatalyst material is 0.1:4.5: 2.5.
A processing technology of a semiconductor photocatalyst material comprises the following steps:
(1) bismuth vanadate BiVO4The preparation of (1): weighing 5g Bi (NO)3)3·5H2Dissolving O in 25ml of 5ml/L nitric acid solution, stirring, dissolving completely to obtain solution A, and weighing 0.7g NH4VO3Dissolving in 25ml of 5ml/L sodium hydroxide solution, stirring, completely dissolving to obtain solution B, sequentially adding the solution A and the solution B into a reaction kettle, reacting at 140 ℃ for 7.5h, naturally cooling to room temperature, filtering, washing with absolute ethyl alcohol, and drying at 75 ℃ for 11.5h to obtain bismuth vanadate;
(2) cerium/vanadic acidBismuth Ce/BiVO4Preparation of the complex: weighing 4.5g of bismuth vanadate obtained in step (1) and 0.4g of Ce (NO)3)3·6H2Placing O into a crucible, adding 25ml of deionized water into the crucible, performing ultrasonic treatment, uniformly mixing, placing the crucible into a drying oven, drying for 7.5 hours at 95 ℃, then placing the crucible into a muffle furnace, calcining for 4.5 hours at 580 ℃, and naturally cooling to room temperature to obtain a cerium/bismuth vanadate compound;
(3) preparing hexagonal boron nitride h-BN nanosheets:
(a) weighing 0.8g of boric acid and 6g of urea, dissolving in 120ml of deionized water, performing ultrasonic treatment for 28min, completely dissolving and uniformly mixing, then performing magnetic stirring at a constant temperature of 75 ℃, and evaporating the solution to dryness to obtain a precursor;
(b) putting the precursor obtained in the step (a) into a crucible, putting the crucible into a tubular furnace, introducing nitrogen for 28min, carrying out temperature programming, wherein the temperature programming condition is that the temperature is raised to 950 ℃ at the speed of 4.5 ℃/min, keeping the temperature for 7.5h, and naturally cooling to room temperature to obtain hexagonal boron nitride powder;
(c) carrying out heat treatment on the hexagonal boron nitride powder obtained in the step (b), wherein the heat treatment condition is that the temperature is 950 ℃ and the time is 7 hours, and naturally cooling to room temperature to obtain a hexagonal boron nitride nanosheet;
(4) cerium/bismuth vanadate/hexagonal boron nitride Ce/BiVO4The preparation method of the/h-BN composite photocatalyst comprises the following steps: and (3) weighing 2.5g of hexagonal boron nitride nanosheet obtained in the step (3) and 4.6g of cerium/bismuth vanadate compound obtained in the step (2), putting the hexagonal boron nitride nanosheet and the cerium/bismuth vanadate compound into a crucible, adding 25ml of methanol into the crucible, carrying out ultrasonic treatment, uniformly mixing, putting the crucible into a muffle furnace, calcining for 5.5 hours at 750 ℃, and naturally cooling to room temperature to obtain the cerium/bismuth vanadate/hexagonal boron nitride compound photocatalyst.
Example 5:
a semiconductor photocatalyst material comprises metal cerium, bismuth vanadate and hexagonal boron nitride, wherein the hexagonal boron nitride is used as a carrier of the composite photocatalyst material, bismuth vanadate doped with metal cerium is loaded on the hexagonal boron nitride, and the mass ratio of the metal cerium to the bismuth vanadate to the hexagonal boron nitride in the composite photocatalyst material is 0.1:5: 3.
A processing technology of a semiconductor photocatalyst material comprises the following steps:
(1) bismuth vanadate BiVO4The preparation of (1): 9g of Bi (NO) are weighed out3)3·5H2Dissolving O in 30ml of 6mol/L nitric acid solution, stirring, dissolving completely to obtain solution A, and weighing 0.8g of NH4VO3Dissolving in 30ml of 6mol/L sodium hydroxide solution, stirring, completely dissolving to obtain solution B, sequentially adding the solution A and the solution B into a reaction kettle, reacting for 8 hours at 150 ℃, naturally cooling to room temperature, filtering, washing with absolute ethyl alcohol, and drying for 12 hours at 80 ℃ to obtain bismuth vanadate;
(2) cerium/bismuth vanadate Ce/BiVO4Preparation of the complex: weighing 5g of bismuth vanadate obtained in step (1) and 0.9g of Ce (NO)3)3·6H2Placing O into a crucible, adding 30ml of deionized water into the crucible, performing ultrasonic treatment, uniformly mixing, placing the crucible into a drying oven, drying for 8 hours at 100 ℃, then placing the crucible into a muffle furnace, calcining for 5 hours at 600 ℃, and naturally cooling to room temperature to obtain a cerium/bismuth vanadate compound;
(3) preparing hexagonal boron nitride h-BN nanosheets:
(a) weighing 9g of boric acid and 12g of urea, dissolving in 150ml of deionized water, carrying out ultrasonic treatment for 30min, completely dissolving and uniformly mixing, then carrying out constant-temperature magnetic stirring at 80 ℃, and evaporating the solution to dryness to obtain a precursor;
(b) putting the precursor obtained in the step (a) into a crucible, putting the crucible into a tube furnace, introducing nitrogen for 30min, carrying out temperature programming, wherein the temperature programming condition is that the temperature is raised to 1000 ℃ at the speed of 5 ℃/min, keeping the temperature for 8h, and naturally cooling to room temperature to obtain hexagonal boron nitride powder;
(c) carrying out heat treatment on the hexagonal boron nitride powder obtained in the step (b), wherein the heat treatment condition is that the temperature is 1000 ℃ and the time is 8 hours, and naturally cooling to room temperature to obtain a hexagonal boron nitride nanosheet;
(4) cerium/bismuth vanadate/hexagonal boron nitride Ce/BiVO4The preparation method of the/h-BN composite photocatalyst comprises the following steps: weighing 3g of hexagonal boron nitride nanosheet obtained in step (3) and 5.1g ofAnd (3) putting the cerium/bismuth vanadate composite obtained in the step (2) into a crucible, adding 30ml of methanol into the crucible, performing ultrasonic treatment, uniformly mixing, putting the crucible into a muffle furnace, calcining at 800 ℃ for 6 hours, and naturally cooling to room temperature to obtain the cerium/bismuth vanadate/hexagonal boron nitride composite photocatalyst.
Comparative example 1:
a semiconductor photocatalyst material comprises metal cerium and bismuth vanadate, wherein the composite photocatalyst material is a bismuth vanadate composite photocatalyst material doped with the metal cerium, and the mass ratio of the metal cerium to the bismuth vanadate in the composite photocatalyst material is 0.1:4.
A processing technology of a semiconductor photocatalyst material comprises the following steps:
(1) bismuth vanadate BiVO4The preparation of (1): weighing 4 Bi (NO)3)3·5H2Dissolving O in 20ml of 4mol/L nitric acid solution, stirring, dissolving completely to obtain solution A, and weighing 0.5g of NH4VO3Dissolving in 20ml of 4mol/L sodium hydroxide solution, stirring, completely dissolving to obtain solution B, sequentially adding the solution A and the solution B into a reaction kettle, reacting at 130 ℃ for 6 hours, naturally cooling to room temperature, filtering, washing with absolute ethyl alcohol, and drying at 70 ℃ for 11 hours to obtain bismuth vanadate;
(2) cerium/bismuth vanadate Ce/BiVO4Preparation of the complex: weighing 4g of bismuth vanadate obtained in step (1) and 0.5g of Ce (NO)3)3·6H2And putting O into the crucible, adding 20ml of deionized water into the crucible, performing ultrasonic treatment, uniformly mixing, putting the crucible into an oven, drying for 7 hours at the temperature of 90 ℃, then putting the crucible into a muffle furnace, calcining for 4 hours at the temperature of 540 ℃, and naturally cooling to room temperature to obtain the cerium/bismuth vanadate composite photocatalyst material.
Comparative example 1 in comparison with example 3, bismuth vanadate doped with cerium metal was not supported on a hexagonal boron nitride support.
Comparative example 2:
a semiconductor photocatalyst material comprises bismuth vanadate and hexagonal boron nitride, wherein the hexagonal boron nitride is used as a carrier of the composite photocatalyst material, bismuth vanadate is loaded on the hexagonal boron nitride, and the mass ratio of the bismuth vanadate to the hexagonal boron nitride in the composite photocatalyst material is 4: 2.
A processing technology of a semiconductor photocatalyst material comprises the following steps:
(1) bismuth vanadate BiVO4The preparation of (1): weighing 4 Bi (NO)3)3·5H2Dissolving O in 20ml of 4mol/L nitric acid solution, stirring, dissolving completely to obtain solution A, and weighing 0.5g of NH4VO3Dissolving in 20ml of 4mol/L sodium hydroxide solution, stirring, completely dissolving to obtain solution B, sequentially adding the solution A and the solution B into a reaction kettle, reacting at 130 ℃ for 6 hours, naturally cooling to room temperature, filtering, washing with absolute ethyl alcohol, and drying at 70 ℃ for 11 hours to obtain bismuth vanadate;
(2) preparing hexagonal boron nitride h-BN nanosheets:
(a) weighing 0.6g of boric acid and 6g of urea, dissolving in 100ml of deionized water, performing ultrasonic treatment for 24min, completely dissolving and uniformly mixing, then performing magnetic stirring at a constant temperature of 70 ℃, and evaporating the solution to dryness to obtain a precursor;
(b) putting the precursor obtained in the step (a) into a crucible, putting the crucible into a tube furnace, introducing nitrogen for 24min, carrying out temperature programming, wherein the temperature programming condition is that the temperature is raised to 900 ℃ at the speed of 4 ℃/min, keeping the temperature for 7h, and naturally cooling to room temperature to obtain hexagonal boron nitride powder;
(c) carrying out heat treatment on the hexagonal boron nitride powder obtained in the step (b), wherein the heat treatment condition is that the temperature is 900 ℃ and the time is 6 hours, and naturally cooling to room temperature to obtain a hexagonal boron nitride nanosheet;
(3) bismuth vanadate/hexagonal boron nitride BiVO4The preparation method of the/h-BN composite photocatalyst comprises the following steps: and (3) weighing 2g of the hexagonal boron nitride nanosheet obtained in the step (2) and 4g of the bismuth vanadate obtained in the step (1), putting the hexagonal boron nitride nanosheet and the bismuth vanadate into a crucible, adding 20ml of methanol into the crucible, carrying out ultrasonic treatment, uniformly mixing, putting the crucible into a muffle furnace, calcining for 5 hours at 700 ℃, and naturally cooling to room temperature to obtain the bismuth vanadate/hexagonal boron nitride composite photocatalyst.
The difference between the comparative example 1 and the example 3 is that the bismuth vanadate/hexagonal boron nitride composite photocatalyst is doped with metal cerium.
Example of effects:
(1) experimental samples: the composite photocatalyst materials prepared in the embodiments 1 to 5 of the invention and the composite photocatalyst materials prepared in the comparative examples 1 and 2.
(2) The experimental method comprises the steps of taking organic dye methylene blue as a degraded substance to carry out visible light catalytic reaction, adding 2 mL of 5.0 × -4 mol/L of methylene blue stock solution and 20mg of an experimental sample into a 100mL beaker in sequence, adding deionized water to a constant volume of 40 mL, carrying out ultrasonic treatment in an ultrasonic cleaner, pouring the experimental sample into a photocatalytic reactor after the experimental sample is completely dispersed in the solution, taking a xenon lamp as a visible light source, keeping the distance between the light source and the reactor at about 10 cm, keeping the temperature inside the reactor at about 25 ℃, controlling by using continuous circulating water, installing a filter between the light source and the reactor before starting the reaction for catalytically degrading the methylene blue solution by visible light, filtering out the ultraviolet light with the wavelength of less than 400 nm by using the filter, mainly using the light absorbed by the catalyst as visible light, placing the reaction system in a dark environment before starting the reaction for catalytically degrading the methylene blue solution by visible light irradiation, carrying out desorption by magnetic stirring for 1h, then opening the light source to balance, carrying out cooling, carrying out the centrifugal degradation of the experimental sample by using a visible light absorption rate of the ultraviolet light in a 36365, and carrying out the centrifugal degradation of the experimental sample, wherein the absorbance of the sample is measured by using a visible light absorption rate of 30-0A in the sample before the sample.
TABLE 1
(3) The experimental results are as follows: as can be seen from Table 1, after 180min of illumination, the degradation rates of the composite photocatalyst materials prepared in the embodiments 1 to 5 of the invention to methylene blue are both 98.7% and above, while the degradation rates of the composite photocatalyst materials prepared in the comparative examples 1 and 2 to methylene blue are 73.2% and 75.2%, respectively, and the experimental results show that the composite photocatalyst materials prepared in the embodiments 1 to 5 of the invention have good visible light catalytic performance.
Compared with the composite photocatalyst material prepared in the embodiment 3 of the invention, the composite photocatalyst material prepared by not loading bismuth vanadate doped with cerium metal on hexagonal boron nitride has better photocatalytic performance than the composite photocatalyst material prepared by loading bismuth vanadate doped with cerium metal on hexagonal boron nitride.
Compared with the composite photocatalyst material prepared in the embodiment 3 of the invention, the photocatalytic performance of the bismuth vanadate/hexagonal boron nitride composite photocatalyst not doped with metal cerium is lower than that of the bismuth vanadate/hexagonal boron nitride composite photocatalyst doped with metal cerium.
It will be evident to those skilled in the art that the invention is not limited to the details of the foregoing illustrative embodiments, and that the present invention may be embodied in other specific forms without departing from the spirit or essential attributes thereof. The present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein. Any reference sign in a claim should not be construed as limiting the claim concerned.
Claims (1)
1. A processing technology of a semiconductor photocatalyst material is characterized by comprising the following steps:
(1) preparing bismuth vanadate: weighing Bi (NO3) 35. H2O, dissolving in a nitric acid solution, stirring, completely dissolving to obtain a solution A, weighing NH4VO3, dissolving in a sodium hydroxide solution, stirring, completely dissolving to obtain a solution B, sequentially adding the solution A and the solution B into a reaction kettle, reacting at 100-150 ℃ for 5-8H, naturally cooling to room temperature, filtering, washing with absolute ethyl alcohol, and drying at 60-80 ℃ for 10-12H to obtain bismuth vanadate; the mass concentration of the nitric acid solution and the sodium hydroxide solution is 2-6 mol/L;
(2) preparation of cerium/bismuth vanadate complexes: weighing the bismuth vanadate obtained in the step (1) and Ce (NO3) 36. H2O, putting the bismuth vanadate and the Ce (NO3) 36. H2O into a crucible, adding deionized water into the crucible, carrying out ultrasonic treatment, uniformly mixing, putting the crucible into an oven, drying for 6-8H at 80-100 ℃, then putting the crucible into a muffle furnace, calcining for 3-5H at 500-600 ℃, and naturally cooling to room temperature to obtain a cerium/bismuth vanadate compound;
(3) preparing hexagonal boron nitride nanosheets:
(a) weighing boric acid and urea, dissolving in deionized water, performing ultrasonic treatment for 20-30min, dissolving completely, mixing uniformly, magnetically stirring at constant temperature of 60-80 deg.C, and evaporating the solution to dryness to obtain precursor;
(b) putting the precursor obtained in the step (a) into a crucible, putting the crucible into a tube furnace, introducing nitrogen for 20-30min, carrying out temperature programming, and naturally cooling to room temperature to obtain hexagonal boron nitride powder; the temperature programming condition is that the temperature is raised to 800 ℃ and 1000 ℃ at the speed of 3-5 ℃/min, and the temperature is kept for 5-8 h;
(c) carrying out heat treatment on the hexagonal boron nitride powder obtained in the step (b), and naturally cooling to room temperature to obtain a hexagonal boron nitride nanosheet; the heat treatment condition is that the temperature is 800-1000 ℃ and the time is 4-8 h;
(4) preparing a cerium/bismuth vanadate/hexagonal boron nitride composite photocatalyst: weighing the hexagonal boron nitride nanosheet obtained in the step (3) and the cerium/bismuth vanadate compound obtained in the step (2), putting the hexagonal boron nitride nanosheet and the cerium/bismuth vanadate compound into a crucible, adding methanol into the crucible, performing ultrasonic treatment, uniformly mixing, putting the crucible into a muffle furnace, calcining for 4-6h at the temperature of 600-800 ℃, and naturally cooling to room temperature to obtain the cerium/bismuth vanadate/hexagonal boron nitride compound photocatalyst; the composite photocatalyst material comprises cerium metal, bismuth vanadate and hexagonal boron nitride, the hexagonal boron nitride is used as a carrier, and bismuth vanadate doped with cerium metal is loaded on the hexagonal boron nitride; the mass ratio of the hexagonal boron nitride is 0.1:3-5: 1-3.
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