CN111323391A - Micro-nano refractive index sensor based on two-dimensional simple metamaterial structure - Google Patents
Micro-nano refractive index sensor based on two-dimensional simple metamaterial structure Download PDFInfo
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- CN111323391A CN111323391A CN202010255624.3A CN202010255624A CN111323391A CN 111323391 A CN111323391 A CN 111323391A CN 202010255624 A CN202010255624 A CN 202010255624A CN 111323391 A CN111323391 A CN 111323391A
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Abstract
The invention discloses a micro-nano refractive index sensor based on a two-dimensional simple metamaterial structure, which is formed by periodic structure units; the periodic unit structure is formed by stacking a one-dimensional medium grating array on SiO2‑Al2O3Formed on the thin film layer. The sensor has the advantages that the characteristic that guided mode resonance and cavity mode generated by the structure are very sensitive to surrounding medium environment is utilized, the tiny change of the refractive index of a substance close to the surface of the structure can be converted into the displacement of a measurable transmission peak, the high-sensitivity micro-nano scale refractive index sensing measurement is designed and realized, the sensor has excellent refractive index sensitivity (410.2nm/RIU) and ultrahigh quality factor (4769.8), and the sensor can also be used for detecting the gas density in a sub-wavelength range. The sensor can obviously reduce the full width at half maximum, improve the sensitivity of the sensor, effectively prevent the corrosion and the oxidation of the structure and prolong the service life of the product.
Description
Technical Field
The invention relates to the technical field of sensors, in particular to a micro-nano refractive index sensor based on a two-dimensional simple metamaterial structure.
Background
Metamaterials are a class of materials that do not exist in nature, but have unique properties that are incomparable with natural materials, particularly attractive in absorber, bolometer, imaging systems, sensors, infrared stealth applications. Exceptional transmission, demonstrated by Ebbesen et al in 1998, and its potential application in transparent electrodes, has led to the study of the transparency of new structures. In the fields of probing and stealth, in order to make the structure transparent, a typical approach is to introduce holes or slits on both sides of the metal film, which can provide efficient coupling of input and output light by exciting surface plasmons. Also, narrow valleys in the high transmission spectrum have found wide application in the sensor field. Since then, different kinds of sensors are designed to be applied to various fields.
To achieve higher absorption performance, a structure consisting of a periodic array of U-shaped metal Split Ring Resonators (SRRs) was designed for high quality sensing. By suspending the metamaterial to reduce the influence of the substrate, strong diffractive coupling of MP resonance can be realized, thereby leading to a large magnetic field enhancement of a narrow-band mixed MP mode, and the quality factor of the structure is 40. Meanwhile, a sensor based on a grating coupling plasma structure of a micron-sized InSb layer is designed by people through plasma resonance and Fano resonance, and the sensitivity of the structure in a terahertz wave band is high. In addition, Al is designed2O3-a four-layer periodic grating structure of Si-Au-Si with a refractive index sensitivity of 404.3nm/RIU in the visible and near infrared range, a full width at half maximum of 8nm and a quality factor of 50.3.
The micro-nano refractive index sensor in the prior art has the defects of complex structure, low refractive index sensitivity, small quality factor and the like, and the defects limit the application of the micro-nano refractive index sensor in a real environment. Therefore, the invention provides a photonic crystal sensor with simple structure, high quality factor and high refractive index sensitivity, which can effectively solve the technical problems.
Disclosure of Invention
The invention aims to provide a micro-nano refractive index sensor based on a two-dimensional simple metamaterial structure, and aims to solve the technical problems of low refractive index sensitivity, small quality factor, complex structure and narrow working bandwidth in the prior art.
In order to achieve the purpose, the micro-nano refractive index sensor based on the two-dimensional simple metamaterial structure comprises an upper layer structure and a lower layer structure, wherein the upper layer structure is stacked on the lower layer structure, and the upper layer structure is a periodically arranged all-dielectric grating structure working in a sub-wavelength range.
Wherein the upper layer structure is one-dimensional SiO2The lower layer structure is SiO2-Al2O3A thin film layer.
Wherein said Al is2O3The thickness h1 of the film layer is 5 nm-90 nm, and the SiO is2The thickness h2 of the film layer is 5 nm-90 nm, and the SiO is2The thickness h3 of the grating strip is set to be 50 nm-500 nm, and the SiO is2The period P of the grating bars is 400 nm-1000 nm, and the SiO2The width W of the grating bars is 200 nm-800 nm.
Wherein said Al is2O3The thickness h1 of the thin film layer is 10nm, and the SiO2The thickness h2 of the thin film layer is 10nm, and the SiO2The thickness h3 of the grating strip is 150nm, and the SiO2The period P of the grating strips is 900nm, and the SiO2The width W of the grating strips was 800 nm.
The refractive index sensitivity S of the micro-nano refractive index sensor based on the two-dimensional simple metamaterial structure is represented as follows:
S＝Δλ/Δn
where △ λ and △ n are denoted as wavelength shift and refractive index change, respectively.
The quality factor FOM of the micro-nano refractive index sensor based on the two-dimensional simple metamaterial structure is expressed as follows:
FOM＝S/FWHM
where S and FWHM are expressed as refractive index sensitivity and full width at half maximum, respectively.
The invention has the beneficial effects that: the structure is an all-dielectric structure, so that the sensitivity of the sensor can be obviously improved, the corrosion and oxidation of the structure can be effectively prevented, and the service life is prolonged. After the photonic crystal sensor structure optimizes parameters (P, h1, h2, h3 and W), the quality factor is up to 4769.8, the full width at half maximum is 0.086nm, the refractive index sensitivity is 410.2nm/RIU, and the photonic crystal sensor structure is superior to the existing photonic crystal sensor. Therefore, the structure can be applied to the fields of high-quality sensing, beam steering, filters and the like.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a micro-nano refractive index sensor in an embodiment.
Fig. 2 shows a transmission spectrum of the micro-nano refractive index sensor in the embodiment, where h1 is 20nm, h2 is 30nm, h3 is 200nm, P is 700nm, and w is 300 nm.
Fig. 3, (a) and (b) are simulated transmission spectra of the sensor parameter P, peak wavelength, full width at half maximum, respectively, versus P.
Fig. 4, (a) and (b) are the simulated transmission spectrum and peak wavelength, full width at half maximum, respectively, for this sensor parameter h1 versus h 1.
Fig. 5, (a) and (b) are the simulated transmission spectrum and peak wavelength, full width at half maximum, respectively, for this sensor parameter h2 versus h 2.
Fig. 6, (a) and (b) are the simulated transmission spectrum and peak wavelength, full width at half maximum, respectively, for this sensor parameter h3 versus h 3.
FIG. 7, (a) and (b) are the simulated transmission spectrum and peak wavelength, full width at half maximum, versus w, respectively, for the sensor parameter w.
Fig. 8, the position of the dip (λ 1, λ 2 and λ 3) of the spectral change and the sensitivity S versus the surrounding refractive index change.
10-upper layer structure, 11-SiO2Grating strip, 20-lower layer structure, 21-Al2O3Film layer, 22-SiO2A thin film layer.
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the drawings are illustrative and intended to be illustrative of the invention and are not to be construed as limiting the invention.
In the description of the present invention, it is to be understood that the terms "length", "width", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like, indicate orientations or positional relationships based on the orientations or positional relationships illustrated in the drawings, and are used merely for convenience in describing the present invention and for simplicity in description, and do not indicate or imply that the devices or elements referred to must have a particular orientation, be constructed in a particular orientation, and be operated, and thus, are not to be construed as limiting the present invention. Further, in the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
The invention provides a micro-nano refractive index sensor based on a two-dimensional simple metamaterial structure, which comprises an upper layer structure 10 and a lower layer structure 20, wherein the upper layer structure 10 is stacked on the lower layer structure 20, and the upper layer structure 10 is a periodically arranged all-dielectric grating structure working in a sub-wavelength range.
The upper layer structure 10 is one-dimensional SiO2The grating strips 11, the underlying structure 20 being SiO2-Al2O3A thin film layer.
The Al is2O3The thickness h1 of the thin film layer 21 is 5 nm-90 nm, and the SiO2The thickness h2 of the thin film layer 22 is 5nm to 90nm, and the SiO2The thickness h3 of the grating strip 11 is set to 50nm to 500nm, the SiO2The period P of the grating strips 11 is 400 nm-1000 nm, and the SiO2The width W of the grating strips 11 is 200nm to 800 nm.
The Al is2O3The thickness h1 of the thin film layer 21 is 10nm, and the SiO2The thickness h2 of the thin film layer 22 is 10nm, the SiO2The thickness h3 of the grating strip 11 is 150nm, the SiO2The period P of the grating strips 11 is 900nm, and the width W of the SiO2 grating strips 11 is 800 nm.
The refractive index sensitivity S of the micro-nano refractive index sensor based on the two-dimensional simple metamaterial structure is expressed as follows:
S＝Δλ/Δn
where △ λ and △ n are denoted as wavelength shift and refractive index change, respectively.
The quality factor FOM of the micro-nano refractive index sensor based on the two-dimensional simple metamaterial structure is expressed as follows:
FOM＝S/FWHM
where S and FWHM are expressed as refractive index sensitivity and full width at half maximum, respectively.
In this embodiment, as can be seen from fig. 1, the micro-nano sensor based on the two-dimensional simple metamaterial structure includes an upper layer structure 10 and a lower layer structure 20, wherein the upper layer structure 10 is stacked on the lower layer structure 20; the upper layer structure 10 is one-dimensional SiO2The grating strips 11, the underlying structure 20 being SiO2-Al2O3A thin film layer. The SiO of the uppermost layer2The grating strips 11 have a thickness h3 of 200nm and a width W of 300 nm. The SiO2The thickness h2 of the thin film layer 22 is 30nm, Al2O3The thickness h1 of the thin film layer 21 was 20nm and the period P of the grating was 700 nm. The present embodiment employs a finite element method (COMSOL Multiphysics) to perform two-dimensional numerical simulation. SiO22And Al2O3The refractive index of (2) is measured using Palik. Normally incident light is incident in the negative z-direction with polarization along the x-direction (TM polarization). Periodic boundary conditions are applied to the left and right sides of the structure, periodic port conditions are used on the top and bottom sides, Perfectly Matched Layer (PML) boundary conditions are applied behind the ports, and the perfectly matched layer is far from the structure to absorb light and avoid unnecessary multiple reflections. In the analog simulation, the grid is set as a physical field control grid, and the cell size is set as extremely fine.
In fig. 2, the structural parameters of the photonic crystal sensor are: h 1-20 nm, h 2-30 nm, h 3-200 nm, W-300 nm, and P-700 nm. There is a significant drop in the transmission spectrum (λ)1) The full width at half maximum at this time was 1.73 nm. In order to further reduce the full width at half maximum of the structure, so that the invention has more excellent performance, the following research and simulation are carried out on the parameters of the structure.
FIG. 3 is a simulation of the structural parameter period P of the present invention, the simulation range is 400 nm-1000 nm, and the step size is 100 nm. The transmission spectrum is shown in FIG. 3 (a). FIG. 3(b) shows the transmission peak and full width at half maximum as a function of the period P. From the figure, it is clear that the transmission peak has a significant red shift with increasing period P, which can be attributed to the transverse wave vector of the waveguide mode in the dielectric layer. The full width at half maximum at this time was increased and then decreased, and when the period P was 900nm, the transmission wavelength was 937.6nm and the full width at half maximum was 0.75 nm. As P gets larger, the full width at half maximum, although smaller, is clearly greater than 0 at this point, which significantly degrades sensor performance. Taken together, we choose P900 nm.
FIG. 4(a) is a simulation of the structural parameter h1 in the range of 5, 10, 30, 50, 70 and 90nm according to the present invention. It is evident from the figure that there are three transmission peaks λ1，λ2And λ3Continuous red-shifting. This is mainly due to the increase in the effective cavity length of the dielectric layer. Plot (b) shows the correlation of the transmission peak and full width at half maximum with the parameter h1Is described. From the figure, λ can be seen1And λ2And λ3Compared with the prior art, the frequency divider has the advantages of smaller full width at half maximum and better frequency selectivity. Therefore we focus on the transmission peak λ1Full width at half maximum. Can see lambda1The full width at half maximum of (2) becomes larger with the increase of h1, and when h1 is 5nm, the full width at half maximum is 0.48nm, but the transmission peak value is obviously larger than 0, which is obviously not beneficial to the detection of the sensor. Taken together, we choose h 1-10 nm, in this case λ1，λ2And λ3The transmission peaks were 932.1nm, 501.1nm and 443.4nm respectively, and the full widths at half maximum were 0.57nm, 1.74nm and 9.86nm respectively.
FIG. 5(a) is a simulation of the structural parameter h2 according to the present invention, with the range of 5, 10, 30, 50, 70 and 90 nm. It is evident from the figure that there are two transmission peaks λ1And λ2Continuous red-shifting. This is mainly due to the increase in the effective cavity length of the dielectric layer. The graph (b) shows the transmission peak and full width at half maximum as a function of the parameter h 2. The law of variation of the parameter h2 at this time is similar to that of the parameter h 1. We chose h2 ═ 10nm at this time. At this time λ1And λ2The transmission peak values of (A) were 923.8nm and 491.9nm, respectively, and the full widths at half maximum were 0.36nm and 1.97nm, respectively. The optimized structural parameters are as follows: h 1-10 nm, h 2-10 nm, h 3-200 nm, W-300 nm, and P-900 nm.
FIG. 6(a) is a simulation of the structural parameter h3 in the range of 50, 100, 150, 200, 300 and 500nm according to the present invention. It is evident from the figure that there is a transmission peak λ1Red shift of (A), mainly due to SiO2The effective cavity length of the strip is increased. It can be seen that the full width at half maximum decreases and then increases with increasing parameter h 3. This is because when h3 is too small, the peak transmission peak is significantly greater than 0, resulting in a smaller full width at half maximum. For comprehensive consideration, h3 is 150 nm. At this time λ1The transmission peak values of (A) and (B) were 910.8nm and the full widths at half maximum were 0.21nm, respectively.
FIG. 7(a) is a simulation of the structural parameter w according to the present invention, wherein the simulation range is 200nm to 800nm and the step size is 100 nm. It is evident from the figure that there is a transmission peak λ1And λ1Is mainly due to red shift ofIncreased W will result in an increase in the effective refractive index, which can be explained qualitatively in the theory of waveguide modes. From the figure we can see λ1Apparent ratio λ2The detection of the sensor is more facilitated. Can see lambda1The full width at half maximum of (2) gradually decreased with increasing W, and when W was 800nm, the full width at half maximum was 0.086nm, and the transmission peak was 967.5 nm.
Fig. 8 shows the application of the photonic crystal sensor in gas sensing. Sensitivity through linear fitting, S λ, as the ambient refractive index gradually changes from 1.0 to 1.21＝410.2nm/RIU，Sλ2＝351.3nm/RIU。λ1FOM of 4769.8, λ2The FOM of (a) is 319.4, exhibiting ultra-high sensor performance.
Many excellent performances of the micro-nano refractive index sensor of the embodiment can be easily and widely applied to the fields of biological detection and filters.
In summary, the following steps: the wiener refractive index sensor based on the two-dimensional simple metamaterial structure is composed of periodic structure units; the periodic unit structure is formed by stacking a one-dimensional medium grating array on SiO2-Al2O3Formed on the thin film layer. The micro-nano refractive index sensing measurement with high sensitivity is designed by utilizing the characteristics that the guided mode resonance and the cavity mode generated by the structure are very sensitive to the surrounding medium environment and converting the tiny change of the refractive index of the substance close to the surface of the structure into the displacement of a measurable transmission peak. The sensor based on the two-dimensional simple metamaterial structure has the characteristics of high refractive index sensitivity, large quality factor, simple structure and the like. The structure is an all-dielectric structure, so that the sensitivity of the sensor can be obviously improved, the corrosion and oxidation of the structure can be effectively prevented, and the service life is prolonged. After the photonic crystal sensor structure optimizes parameters (P, h1, h2, h3 and W), the quality factor is up to 4769.8, the full width at half maximum is 0.086nm, the refractive index sensitivity is 410.2nm/RIU, and the photonic crystal sensor structure is superior to the conventional photonic crystal sensor. Therefore, the structure can be applied to the fields of high-quality sensing, beam steering, filters and the like, and can also be used for detecting the gas density in the sub-wavelength range. The sensor designed by the invention can be obviously reduced by halfThe full width at peak improves the sensitivity of the sensor, can effectively prevent the corrosion and oxidation of the structure and prolongs the service life of the product. The sensor is novel in design, is applied to an all-dielectric structure, has a simple structure, is small in size, wide in detection range and high in sensitivity, and is a refractive index sensor with high practicability.
While the invention has been described with reference to a preferred embodiment, it will be understood by those skilled in the art that various changes in form and detail may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (6)
1. A micro-nano refractive index sensor based on a two-dimensional simple metamaterial structure is characterized in that,
the grating structure comprises an upper layer structure and a lower layer structure, wherein the upper layer structure is stacked on the lower layer structure, and the upper layer structure is a periodically arranged all-dielectric grating structure working in a sub-wavelength range.
2. A micro-nano refractive index sensor based on a two-dimensional simple metamaterial structure as claimed in claim 1,
the upper layer structure is one-dimensional SiO2The lower layer structure is SiO2-Al2O3A thin film layer.
3. A micro-nano refractive index sensor based on a two-dimensional simple metamaterial structure as claimed in claim 2,
the Al is2O3The thickness h1 of the film layer is 5 nm-90 nm, and the SiO is2The thickness h2 of the film layer is 5 nm-90 nm, and the SiO is2The thickness h3 of the grating strip is set to be 50 nm-500 nm, and the SiO is2The period P of the grating bars is 400 nm-1000 nm, and the SiO2The width W of the grating bars is 200 nm-800 nm.
4. A micro-nano refractive index sensor based on a two-dimensional simple metamaterial structure as claimed in claim 3,
the Al is2O3The thickness h1 of the thin film layer is 10nm, and the SiO2The thickness h2 of the thin film layer is 10nm, and the SiO2The thickness h3 of the grating strip is 150nm, and the SiO2The period P of the grating bars is 900nm, and the width W of the SiO2 grating bars is 800 nm.
5. A micro-nano refractive index sensor based on a two-dimensional simple metamaterial structure as claimed in claim 1,
the refractive index sensitivity S of the micro-nano refractive index sensor based on the two-dimensional simple metamaterial structure is expressed as follows:
S＝Δλ/Δn
where △ λ and △ n are denoted as wavelength shift and refractive index change, respectively.
6. A micro-nano refractive index sensor based on a two-dimensional simple metamaterial structure as claimed in claim 1,
the quality factor FOM of the micro-nano refractive index sensor based on the two-dimensional simple metamaterial structure is expressed as follows:
FOM＝S/FWHM
where S and FWHM are expressed as refractive index sensitivity and full width at half maximum, respectively.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112909738A (en) * | 2021-01-20 | 2021-06-04 | 杭州电子科技大学 | Two-dimensional on-chip sensor based on double grating feedback and design method |
| CN113310946A (en) * | 2021-06-28 | 2021-08-27 | 杭州电子科技大学 | Micro-nano refractive index sensor based on metamaterial |
| CN113358601A (en) * | 2021-06-01 | 2021-09-07 | 北京邮电大学 | Multi-fano resonance super-surface refractive index sensor based on rectangular ring hole |
| CN113376122A (en) * | 2021-06-01 | 2021-09-10 | 北京邮电大学 | All-dielectric super-surface refractive index sensor based on four-rectangular silicon pillar structure |
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2020
- 2020-04-02 CN CN202010255624.3A patent/CN111323391A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112909738A (en) * | 2021-01-20 | 2021-06-04 | 杭州电子科技大学 | Two-dimensional on-chip sensor based on double grating feedback and design method |
| CN113358601A (en) * | 2021-06-01 | 2021-09-07 | 北京邮电大学 | Multi-fano resonance super-surface refractive index sensor based on rectangular ring hole |
| CN113376122A (en) * | 2021-06-01 | 2021-09-10 | 北京邮电大学 | All-dielectric super-surface refractive index sensor based on four-rectangular silicon pillar structure |
| CN113310946A (en) * | 2021-06-28 | 2021-08-27 | 杭州电子科技大学 | Micro-nano refractive index sensor based on metamaterial |
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