CN111313222A - One-dimensional photonic crystal, preparation method thereof and optical fiber laser - Google Patents
One-dimensional photonic crystal, preparation method thereof and optical fiber laser Download PDFInfo
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- CN111313222A CN111313222A CN202010188508.4A CN202010188508A CN111313222A CN 111313222 A CN111313222 A CN 111313222A CN 202010188508 A CN202010188508 A CN 202010188508A CN 111313222 A CN111313222 A CN 111313222A
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Abstract
The invention provides a one-dimensional photonic crystal, a preparation method thereof and a fiber laser, wherein the preparation method of the one-dimensional photonic crystal comprises the following steps: s1, adding PVP into ethylene glycol to obtain a mixed solution; s2, adding sodium tellurite, bismuth chloride and sodium hydroxide into the mixed solution to obtain a precursor solution; s3, reacting the precursor solution at constant temperature to obtain a reaction product; s4, centrifuging the reaction product to obtain Bi2Te3A nanoplatelet precipitate; s5, drying the precipitate to obtain Bi2Te3Nano-sheet(ii) a S6, adding Bi2Te3Dissolving the nanosheets in water; s7, repeatedly plating Ta on the quartz substrate2O5And SiO2(ii) a S8, dripping Bi2Te3An aqueous solution; s9, repeating SiO plating2And Ta2O5(ii) a The reaction process for preparing the one-dimensional photonic crystal is mild, the loss to a reactor is small, the prepared one-dimensional photonic crystal is good in stability, high in nonlinear performance and large in modulation depth, and the fiber laser manufactured by the one-dimensional photonic crystal is easy to realize self-starting mode locking.
Description
Technical Field
The invention belongs to the technical field of fiber laser, and particularly relates to a one-dimensional photonic crystal, a preparation method thereof and a fiber laser.
Background
The fiber laser has the advantages of small volume, light weight and easy integration, can obtain laser pulses with high power and stable performance by amplifying the fiber laser as a seed source, and can be applied to a plurality of fields such as industrial cutting, laser marking, laser weapons, biological detection and the like.
The traditional optical fiber laser mainly uses a two-dimensional material as a saturable absorber to realize passive mode locking, the mode locking of the optical fiber laser strictly limits the modulation depth of the two-dimensional material, the modulation depth of the two-dimensional material is too high, so that a Q switch is triggered, the modulation depth of the two-dimensional material is too low, the absorption coefficient of the two-dimensional material is reduced, the limiting condition of the mode locking of the optical fiber laser is more severe, and the coupling output of the optical fiber laser can not obtain ultrashort pulses; and the mode locking can only be realized to the fiber laser of low modulation degree of depth two-dimensional material preparation under the effect of adjusting polarization controller, can not self-starting mode locking, poor stability, macromolecular compound in the two-dimensional material is high temperature resistant simultaneously, can't realize high power output in industrial application, the range of application of fiber laser has greatly been restricted, consequently need find out a high anti-damage threshold value, big absorption coefficient and the self-starting mode locking fiber laser of high modulation degree of depth to realize the stable self-starting mode locking under the regulation-free condition.
Disclosure of Invention
The invention aims to provide a preparation method of one-dimensional photonic crystals, which has the advantages of mild reaction process, low loss to reaction equipment, good crystal quality of the prepared one-dimensional photonic crystals and high yield.
The invention also aims to provide a one-dimensional photonic crystal which has good molding, good nonlinear performance and large modulation depth, and the performance of the one-dimensional photonic crystal cannot change along with the change of temperature.
The invention also aims to provide the optical fiber laser which can realize self-starting mode locking, is free from adjustment, easy to operate, narrow in pulse and good in stability.
The invention adopts the technical scheme that the preparation method of the one-dimensional photonic crystal comprises the following steps:
s1, adding PVP into ethylene glycol, and stirring uniformly to obtain a mixed solution, wherein the molar concentration of the PVP in the mixed solution is 0.35 mol/L;
s2, adding sodium tellurite, bismuth chloride and sodium hydroxide into the mixed solution, stirring until the sodium tellurite, the bismuth chloride and the sodium hydroxide are completely dissolved to obtain a precursor solution, wherein the mass ratio of the sodium tellurite, the bismuth chloride and the sodium hydroxide is 3: 2: 16, the molar concentration of the sodium tellurite in the ethylene glycol is 0.3 mol/L;
s3, introducing the precursor solution into the reaction liner, sealing the reaction liner in a reaction kettle, and placing the reaction liner in a drying oven at 190 ℃ for constant-temperature reaction for 32 hours to obtain a reaction product;
s4, repeatedly cleaning the reaction product by using absolute ethyl alcohol and deionized water, placing the cleaned product in a centrifuge tube, and centrifuging for 5min at the centrifugal rotation speed of 5000r/min to obtain Bi2Te3A nanoplatelet precipitate;
s5, adding Bi2Te3Placing the beaker of the nano-sheet precipitate in a drying oven at the temperature of 60 ℃ for drying for 5h to obtain Bi2Te3Nanosheets;
s6, adding Bi2Te3Dissolving the nano-sheet in aqueous solution to obtain Bi with the molar concentration of 2mmol/L2Te3An aqueous solution;
s7, adjusting the vacuum of the vacuum coating machineRoom temperature and pressure of 10-5Pa, Ta plating on a quartz substrate of 20 μm thickness at repeated intervals2O5Film and SiO2Film to obtain Ta coating2O5Film and SiO2A thin film quartz substrate;
s8, adding Bi2Te3Dripping the aqueous solution on alternate films of the quartz substrate, waiting for 48h to Bi2Te3The aqueous solution is evenly and stably attached to the surface of the alternate film to form Bi2Te3A defect layer;
s9, in Bi2Te3SiO repeatedly plated on the defect layer at intervals2Film and Ta2O5Film to obtain a film containing Bi2Te3A one-dimensional photonic crystal of material.
Further, Bi obtained in said S52Te3The transverse size of the nano sheet is 300-500 nm.
Further, Ta in S72O5Film and SiO2The number of film alternations is five, Ta2O5Film and SiO2The thickness ratio of the film is 2: 3, single layer of Ta2O5The thickness of the film was 181.6 nm.
Further, Bi in the S82Te3The dropping amount of the aqueous solution was 0.1mL/cm2。
Further, SiO in S92Film and Ta2O5The number of film alternations was eleven, Ta2O5Film and SiO2The thickness ratio of the film is 2: 3, single layer of Ta2O5The thickness of the film was 181.6 nm.
The one-dimensional photonic crystal prepared by the preparation method.
The optical fiber laser manufactured by adopting the one-dimensional photonic crystal comprises a 980nmLD pumping source, wherein the output end of the 980nmLD pumping source is connected with the pumping light input end of an 980/1550 wavelength division multiplexer, the multiplexing end of the 980/1550 wavelength division multiplexer is connected with the input end of a polarization-independent isolator through an erbium-doped gain optical fiber, the output end of the polarization-independent isolator is connected with one end of the one-dimensional photonic crystal through a single-mode optical fiber, the other end of the one-dimensional photonic crystal is connected with the input end of an output coupler, the direct-through output end of the output coupler is connected with the signal incidence end of a 980/1550 wavelength division multiplexer, and the coupling output end of the output coupler is a mode-locked pulse.
The invention has the beneficial effects that: 1. bi of the invention2Te3The preparation process of the material is simple, the reaction condition is mild, the loss of reaction equipment is low, the reaction cost is low, and the prepared Bi2Te3The nanosheet is regular hexagonal, sharp in corner, good in crystallization quality and stable in performance; 2. the one-dimensional photonic crystal prepared by the invention enhances Bi2Te3The absorption of the material at 1560nm is improved2Te3The nonlinear performance of the material is used in the fiber laser, and the performance of the material cannot change along with the rise of temperature; 3. the one-dimensional photonic crystal prepared by the invention has large modulation depth, and the requirement on the mode locking condition is relaxed when the one-dimensional photonic crystal is used for the optical fiber laser, so that the optical fiber laser can realize the polarization-free adjustment self-starting more easily; 4. the fiber laser can realize self-starting mode locking, is free from adjustment, easy to operate, narrow in pulse and good in stability.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 shows Bi prepared in an example of the present invention2Te3SEM image of material.
FIG. 2 shows Bi prepared in an example of the present invention2Te3TEM images of the material.
FIG. 3 shows Bi prepared by an example of the present invention2Te3XRD pattern of the material.
FIG. 4 is a schematic diagram of a one-dimensional photonic crystal structure prepared by an embodiment of the present invention.
Fig. 5 is an overall structural view of a fiber laser manufactured according to an embodiment of the present invention.
Fig. 6 is a spectrum of a fiber laser produced in an example of the present invention.
Fig. 7 is a time domain diagram of a fiber laser prepared according to an embodiment of the present invention.
In the figure, 1.980nmLD pump source, 2.980/1550 wavelength division multiplexer, 3 erbium doped gain fiber, 4 polarization independent isolator, 5 single mode fiber, 6 one-dimensional photonic crystal, 7 output coupler.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Containing Bi2Te3The preparation method of the one-dimensional photonic crystal of the defect layer comprises the following steps:
s1, adding PVP into a certain amount of ethylene glycol, and uniformly stirring to obtain a mixed solution, wherein the molar concentration of the PVP in the mixed solution is 0.35 mol/L;
s2, adding sodium tellurite, bismuth chloride and sodium hydroxide into the mixed solution, stirring until the sodium tellurite, the bismuth chloride and the sodium hydroxide are completely dissolved to obtain a precursor solution, wherein the mass ratio of the sodium tellurite, the bismuth chloride and the sodium hydroxide is 3: 2: 16, the molar concentration of the sodium tellurite in the ethylene glycol is 0.3 mol/L;
PVP can increase Bi in the reaction process2Te3The amount of PVP does not change the reaction period, but affects Bi2Te3The quality of the crystal, too small amount of PVP will reduce Bi2Te3Mass of nanosheet, Bi produced2Te3The nano-sheet has irregular shape, and the excessive consumption of PVP can cause Bi2Te3The number of layers of the nano-sheets is increased, and the single crystal quality is poor;
sodium hydroxide can regulate reactionThe reaction process is mild due to the required speed, and the loss of reaction equipment is small; the increase of the amount of sodium hydroxide shortens the reaction period, but Bi is obtained2Te3The nano-sheet has poor crystallization quality, the reaction period can be greatly prolonged by reducing the use amount of sodium hydroxide, but Bi2Te3The crystallization quality of the nano-sheets is improved, and when the amount of sodium hydroxide is reduced to a certain degree, Bi is added2Te3The crystallization quality of the nanosheets cannot be improved along with the reduction of the using amount of the sodium hydroxide, but a large amount of reaction time is consumed; the sodium hydroxide dosage determined by the embodiment of the invention ensures Bi2Te3The reaction period is shortened while the crystallization quality of the nanosheets is high;
s3, introducing the precursor solution into the reaction lining, sealing the reaction lining in a reaction kettle, and placing the reaction kettle in a drying oven with the temperature of 190 ℃ for constant-temperature reaction for 32 hours to obtain a reaction product; although the reaction time is shortened by the excessively high temperature of the drying oven, the reactants involved in the reaction are rapidly bonded, the reaction product is poorly formed, and the generated Bi2Te3The number of the nano-sheets is more, the single crystal quality is poor, the reaction time is prolonged due to the over-low temperature of the drying oven, and part of reactants do not participate in the reaction, so that the generated Bi2Te3The yield of the nanosheets is low;
s4, repeatedly cleaning the reaction product by using absolute ethyl alcohol and deionized water, placing the cleaned reaction product into a centrifuge tube, and centrifuging for 5min at the centrifugal rotation speed of 5000r/min to obtain Bi2Te3Nanosheet precipitate, increased centrifuge speed and time results in Bi2Te3The particle reduction and concentration reduction of the nano-sheet precipitate are not beneficial to the later drying treatment, and the reduction of the centrifugal rotating speed and time leads to Bi2Te3The particles of the nano-sheet precipitate are enlarged and the concentration is increased, so that the dried Bi is obtained2Te3The number of the layers of the nanosheets is large, and the nanosheets are not well formed;
s5, adding Bi2Te3Placing the beaker of the nano-sheet precipitate in a drying oven at the temperature of 60 ℃ for drying for 5 hours to obtain Bi with the transverse dimension of 300-500 nm2Te3Nanosheets;
s6, adding Bi2Te3The nano-sheet is put into water solution and stirred evenly to obtain Bi with the molar concentration of 2mmol/L2Te3An aqueous solution;
s7, adjusting the temperature of the vacuum chamber of the vacuum coating machine to room temperature and the pressure to 10-5Pa, Ta plating on a quartz substrate of 20 μm thickness at repeated intervals2O5Film and SiO2The film is plated with Ta five times2O5Film and SiO2A thin film quartz substrate; wherein Ta2O5Film and SiO2The thickness ratio of the film is 2: 3, single layer of Ta2O5The thickness of the film is 181.6 nm;
s8, adding Bi2Te3The amount of the aqueous solution to be applied was 0.1mL/cm2Dripping on alternate film of quartz substrate, waiting for 48h to Bi2Te3The aqueous solution is evenly and stably attached to the surface of the alternate film to obtain Bi2Te3A defect layer;
Bi2Te3the dripping amount of the aqueous solution is increased, so that the thickness of a defect layer in the one-dimensional photonic crystal is increased, the light transmittance of the one-dimensional photonic crystal is reduced, the non-saturation loss of the one-dimensional photonic crystal is increased, and the manufactured optical fiber laser cannot output ultrashort femtosecond pulses; bi2Te3The dropping amount of the aqueous solution is reduced, so that the thickness of a defect layer in the one-dimensional photonic crystal is reduced, the light transmittance of the one-dimensional photonic crystal is also reduced, the non-saturation loss of the one-dimensional photonic crystal is increased, and the fiber laser manufactured by the one-dimensional photonic crystal cannot output ultrashort femtosecond pulses;
s9, in Bi2Te3SiO repeatedly plated on the defect layer at intervals2Film and Ta2O5The film is formed ten times to obtain the film containing Bi2Te3One-dimensional photonic crystals of materials in which SiO2Film and Ta2O5The thickness ratio of the film was 3: 2, single layer of Ta2O5The thickness of the film was 181.6 nm.
In the invention, PVP is firstly mixed with glycol in S1 and S2, and then the PVP is mixed with other substances, the operation is favorable for dispersing all substances in the precursor liquid, and the subsequent chemical reaction can be carried out more effectivelyAdding smoothly to obtain Bi2Te3The size of the nano-sheet is more uniform.
In the present invention, the reason why the temperature of the reaction vessel is set to 190 ℃ in S3 is that the Bi content is influenced by the change of the reaction temperature and time2Te3The lateral size of the nanosheet, and thus the reduction of Bi2Te3The nonlinear property of the nano-sheet and the optical property of the one-dimensional photonic crystal are that Bi is enabled2Te3The transverse size of the nano-sheet is kept between 300 and 500nm, the one-dimensional photonic crystal with good nonlinear performance and excellent optical performance is provided, the temperature of a reaction kettle is set to be 190 ℃, and the reaction time is set to be 32 h.
SiO in the invention2Film and Ta2O5The change of the thickness ratio of the film can cause the change of a transmission curve, so that the absorption performance of the one-dimensional photonic crystal at 1560nm is changed, the transmissivity of the one-dimensional photonic crystal can be increased when the number of times of the film alternation in the one-dimensional photonic crystal is increased, the transmission condition, the production cost and the practical application of the one-dimensional photonic crystal are comprehensively considered, and the number of times of the alternation is selected.
The pressure of the vacuum chamber is higher than 10-5Pa, will be Ta2O5Film and SiO2The surface flatness of the film is poor, the light transmittance of the prepared one-dimensional photonic crystal is poor, and the electric field of the prepared optical fiber laser cannot be in Bi state when the optical fiber laser is used2Te3The enhancement is realized in the material, so that the nonlinear absorption performance of the one-dimensional photonic crystal is low, and the mode-locked ultrashort pulse output cannot be realized by the fiber laser; the pressure of the vacuum chamber is lower than 10-5Pa causes excessive oxygen in the vacuum chamber, which is not favorable for Ta2O5Film and SiO2The deposition of the film causes poor flatness of the surface of the film in the one-dimensional photonic crystal, the light transmittance of the one-dimensional photonic crystal is poor, and the electric field of the manufactured fiber laser cannot be Bi when the fiber laser is used2Te3The enhancement is realized in the material, the nonlinear absorption performance of the one-dimensional photonic crystal is low, and the mode-locked ultrashort pulse output cannot be realized by the fiber laser.
Using a catalyst containing Bi2Te3The fiber laser prepared by one-dimensional photonic crystal of material comprises 980nmLD pumping source 1The output end of a 980nmLD pump source 1 is connected with the pump light input end of an 980/1550 wavelength division multiplexer 2, the multiplexing end of a 980/1550 wavelength division multiplexer 2 is connected with the input end of a polarization-independent isolator 4 through an erbium-doped gain fiber 3, the output end of the polarization-independent isolator 4 is connected with one end of a one-dimensional photonic crystal 6 through a single-mode fiber 5, the other end of the one-dimensional photonic crystal 6 is connected with the input end of an output coupler 7, the direct output end of the output coupler 7 is connected with the signal incidence end of the 980/1550 wavelength division multiplexer 2, and the coupling output end of the output coupler 7 is a mode-locked pulse output end; the one-dimensional photonic crystal 6 is cut by a cutter and then is arranged on the optical fiber jumper, and the one-dimensional photonic crystal 6 contains Bi2Te3The material can be used for nonlinear absorption and induced mode locking self-starting.
After 1560nm continuous light is incident on the one-dimensional photonic crystal 6, Bi in the one-dimensional photonic crystal 62Te3The material absorbs low-intensity light in incident light and transmits high-intensity light in the incident light to form periodic ultrashort pulses, and meanwhile, the high-intensity light in the incident light is Bi2Te3The material is enhanced, the nonlinear performance of the one-dimensional photonic crystal 6 is increased, the modulation depth is further improved, and the self-starting mode locking of the fiber laser is facilitated.
Examples
Preparing one-dimensional photonic crystals according to the following steps, and assembling the optical fiber laser by using the prepared one-dimensional photonic crystals:
(1) adding 7mmol of PVP solvent into 20mL of ethylene glycol, stirring for 1h to obtain a mixed solution, adding 32mmol of sodium hydroxide, 4mmol of bismuth chloride and 6mmol of sodium tellurite into the mixed solution, and stirring until the sodium hydroxide, the bismuth chloride and the sodium tellurite are completely dissolved to obtain a precursor solution;
(2) placing the precursor solution into a 100mL reaction liner, placing the reaction liner into a reaction kettle, sealing the reaction kettle, and placing the reaction kettle into a drying oven with the temperature of 190 ℃ for constant-temperature reaction for 32 hours to obtain a reaction product;
(3) repeatedly cleaning the reaction product by using absolute ethyl alcohol and deionized water, and then placing the reaction product in a centrifugal tube for 5min at the centrifugal rotating speed of 5000r/min to obtain Bi2Te3A nanoplatelet precipitate;
(4) will contain Bi2Te3Placing the beaker of the nano-sheet precipitate in a drying oven at the temperature of 60 ℃ for drying for 5h to obtain Bi2Te3Nanosheets;
(5) adding Bi2Te3The nano-sheet is put into water solution and stirred evenly to obtain Bi with the molar concentration of 2mmol/L2Te3An aqueous solution;
(6) the temperature of the vacuum chamber is room temperature and the pressure is 10-5Carrying out alternate coating by a vacuum coating machine of Pa, and repeatedly plating Ta on a quartz substrate with the thickness of 20 mu m at intervals2O5Film and SiO2Film 5 times, Ta2O5Film and SiO2The thickness ratio of the film is 2: 3, inputting a preset film thickness given interval into comsol software to obtain an optimal light transmittance curve, and determining a single-layer Ta according to the optimal light transmittance curve2O5The thickness of the film is 181.6 nm;
(7) adding Bi2Te3The amount of the aqueous solution to be applied was 0.1mL/cm2Dripping on alternate film of quartz substrate, waiting for 48h to Bi2Te3The aqueous solution is evenly and stably attached to the surface of the alternate film to obtain Bi2Te3A defect layer;
(8) in Bi2Te3Repeatedly and alternately plating SiO on the defect layer for eleven times2Film and Ta2O5Film to obtain a film containing Bi2Te3The structure of the one-dimensional photonic crystal of the defect layer is shown in fig. 4.
Will contain Bi2Te3The fiber laser is formed by cutting one-dimensional photonic crystals of a defect layer, arranging the one-dimensional photonic crystals in a fiber jumper head and assembling the fiber laser, wherein the structure of the fiber laser is shown in figure 5, the fiber laser comprises a 980nmLD pumping source 1, the output end of the 980nmLD pumping source 1 is connected with the pumping light input end of an 980/1550 wavelength division multiplexer 2, the multiplexing end of a 980/1550 wavelength division multiplexer 2 is connected with the input end of a polarization-independent isolator 4 through an erbium-doped gain fiber 3, the output end of the polarization-independent isolator 4 is connected with one end of a one-dimensional photonic crystal 6 through a single-mode fiber 5, the other end of the one-dimensional photonic crystal 6 is connected with the input end of an output coupler 7, and the throughThe incident end is connected, and the coupling output end of the output coupler 7 is used as a mode locking pulse output end; determining that the fiber laser can realize self-starting when the power of the pumping light of the fiber laser is 28mW according to the pumping source power comparison table, namely 28mW is the lowest self-starting power of the fiber laser, and the alternate thin film layers of the one-dimensional photonic crystal can enable the incident light to be in Bi2Te3The layer realizes the enhancement and further increases Bi2Te3The non-linear behavior of (2).
For Bi prepared in the step (4)2Te3SEM test, TEM test and XRD test are carried out on the nanosheets, the test results are respectively shown in figures 1, 2 and 3, and Bi can be known from figure 12Te3The nano-sheet is in a complete regular hexagon with a diameter of 300-500 nm, and Bi is shown in figure 22Te3The nanosheet is almost free of defects, is a perfect regular hexagonal single crystal, and Bi is shown in figure 32Te3The nano-sheet belongs to a hexagonal system, the preferred growth direction of the nano-sheet is (0, 0, 15) direction, and the structure accords with the basic characteristics of a saturable absorption material.
The performance of the assembled fiber laser is detected by using a spectrometer and an oscilloscope, fig. 6 is a spectrogram of the fiber laser, as shown in fig. 6, the pulse center of the fiber laser is 1560nm, the fiber laser has a Kelly sideband characteristic that negative dispersion solitons are sharp, mode-locked pulses are stable, mutual disturbance does not exist among the solitons, meanwhile, the 3dB bandwidth of a spectrum is larger, the obtained pulse is extremely narrow, and the pulse at the position of 3dB is determined to be a femtosecond pulse with the pulse width of 366fs through measurement; fig. 7 is a spectrum diagram of the fiber laser, and it can be known from fig. 7 that the one-dimensional photonic crystal including the defect layer can realize the stable operation of the fiber laser in the polarization-free adjustment self-start mode-locking, and the output mode-locking pulse is stable.
All the embodiments in the present specification are described in a related manner, and the same and similar parts among the embodiments may be referred to each other, and each embodiment focuses on the differences from the other embodiments. In particular, for the system embodiment, since it is substantially similar to the method embodiment, the description is simple, and for the relevant points, reference may be made to the partial description of the method embodiment.
The above description is only for the preferred embodiment of the present invention, and is not intended to limit the scope of the present invention. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention shall fall within the protection scope of the present invention.
Claims (7)
1. The preparation method of the one-dimensional photonic crystal is characterized by comprising the following steps of:
s1, adding PVP into ethylene glycol, and stirring uniformly to obtain a mixed solution, wherein the molar concentration of the PVP in the mixed solution is 0.35 mol/L;
s2, adding sodium tellurite, bismuth chloride and sodium hydroxide into the mixed solution, stirring until the sodium tellurite, the bismuth chloride and the sodium hydroxide are completely dissolved to obtain a precursor solution, wherein the mass ratio of the sodium tellurite, the bismuth chloride and the sodium hydroxide is 3: 2: 16, the molar concentration of the sodium tellurite in the ethylene glycol is 0.3 mol/L;
s3, introducing the precursor solution into the reaction liner, sealing the reaction liner in a reaction kettle, and placing the reaction liner in a drying oven at 190 ℃ for constant-temperature reaction for 32 hours to obtain a reaction product;
s4, repeatedly cleaning the reaction product by using absolute ethyl alcohol and deionized water, placing the cleaned product in a centrifuge tube, and centrifuging for 5min at the centrifugal rotation speed of 5000r/min to obtain Bi2Te3A nanoplatelet precipitate;
s5, adding Bi2Te3Placing the beaker of the nano-sheet precipitate in a drying oven at the temperature of 60 ℃ for drying for 5h to obtain Bi2Te3Nanosheets;
s6, adding Bi2Te3Dissolving the nano-sheet in aqueous solution to obtain Bi with the molar concentration of 2mmol/L2Te3An aqueous solution;
s7, adjusting the temperature of the vacuum chamber of the vacuum coating machine to room temperature and the pressure to 10-5Pa, Ta plating on a quartz substrate of 20 μm thickness at repeated intervals2O5Film and SiO2Film to obtain Ta coating2O5Film and SiO2A thin film quartz substrate;
s8, adding Bi2Te3Dripping the aqueous solution on alternate films of the quartz substrate, waiting for 48h to Bi2Te3The aqueous solution is evenly and stably attached to the surface of the alternate film to form Bi2Te3A defect layer;
s9, in Bi2Te3SiO repeatedly plated on the defect layer at intervals2Film and Ta2O5Film to obtain a film containing Bi2Te3A one-dimensional photonic crystal of material.
2. The method for preparing one-dimensional photonic crystal according to claim 1, wherein said Bi obtained at S52Te3The transverse size of the nano sheet is 300-500 nm.
3. The method of claim 1, wherein Ta 7 is used as the dopant in the step of S72O5Film and SiO2The number of film alternations is five, Ta2O5Film and SiO2The thickness ratio of the film is 2: 3, single layer of Ta2O5The thickness of the film was 181.6 nm.
4. The method of claim 1, wherein Bi in S8 is2Te3The dropping amount of the aqueous solution was 0.1mL/cm2。
5. The method of claim 1, wherein SiO in S9 is contained in the photonic crystal2Film and Ta2O5The number of film alternations was eleven, Ta2O5Film and SiO2The thickness ratio of the film is 2: 3, single layer of Ta2O5The thickness of the film was 181.6 nm.
6. A one-dimensional photonic crystal produced by the production method according to any one of claims 1 to 4.
7. A fiber laser made of one-dimensional photonic crystal according to claim 5, comprising a 980nm LD pump source (1), the output end of the 980nmLD pump source (1) is connected with the pump light input end of the 980/1550 wavelength division multiplexer (2), the multiplexing end of the 980/1550 wavelength division multiplexer (2) is connected with the input end of the polarization-independent isolator (4) through an erbium-doped gain fiber (3), the output end of the polarization-independent isolator (4) is connected with one end of a one-dimensional photonic crystal (6) through a single-mode optical fiber (5), the other end of the one-dimensional photonic crystal (6) is connected with the input end of the output coupler (7), and a through output end of the output coupler (7) is connected with a signal incidence end of the 980/1550 wavelength division multiplexer (2), and a coupling output end of the output coupler (7) is a mode locking pulse output end.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007016179A (en) * | 2005-07-11 | 2007-01-25 | Tokai Rubber Ind Ltd | Porous film and anisotropic electrically-conductive film given by using the same |
| CN104555952A (en) * | 2013-10-22 | 2015-04-29 | 浙江理工大学 | Preparation method of nanoscale rodlike bismuth telluride nanomaterial |
| CN107703056A (en) * | 2017-09-25 | 2018-02-16 | 电子科技大学 | SOI micro-loop photon biology sensor preparation methods based on 1-D photon crystal |
| CN108163819A (en) * | 2018-02-05 | 2018-06-15 | 怀化学院 | A kind of tellurium bismuth is than tellurium bismuth combination materials for 1/1 and preparation method thereof |
| CN109853031A (en) * | 2019-02-27 | 2019-06-07 | 中南大学 | A kind of high quality two-dimensional layer lead iodide perovskite monocrystal material and preparation method thereof |
-
2020
- 2020-03-17 CN CN202010188508.4A patent/CN111313222B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007016179A (en) * | 2005-07-11 | 2007-01-25 | Tokai Rubber Ind Ltd | Porous film and anisotropic electrically-conductive film given by using the same |
| CN104555952A (en) * | 2013-10-22 | 2015-04-29 | 浙江理工大学 | Preparation method of nanoscale rodlike bismuth telluride nanomaterial |
| CN107703056A (en) * | 2017-09-25 | 2018-02-16 | 电子科技大学 | SOI micro-loop photon biology sensor preparation methods based on 1-D photon crystal |
| CN108163819A (en) * | 2018-02-05 | 2018-06-15 | 怀化学院 | A kind of tellurium bismuth is than tellurium bismuth combination materials for 1/1 and preparation method thereof |
| CN109853031A (en) * | 2019-02-27 | 2019-06-07 | 中南大学 | A kind of high quality two-dimensional layer lead iodide perovskite monocrystal material and preparation method thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115755245A (en) * | 2022-11-28 | 2023-03-07 | 南方科技大学 | Saturable absorber, preparation method thereof and saturable absorber device |
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