CN111312904B - High-performance environment-friendly lead-based perovskite solar cell and preparation method thereof - Google Patents

High-performance environment-friendly lead-based perovskite solar cell and preparation method thereof Download PDF

Info

Publication number
CN111312904B
CN111312904B CN202010156937.3A CN202010156937A CN111312904B CN 111312904 B CN111312904 B CN 111312904B CN 202010156937 A CN202010156937 A CN 202010156937A CN 111312904 B CN111312904 B CN 111312904B
Authority
CN
China
Prior art keywords
lead
perovskite
solution
thin film
based perovskite
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202010156937.3A
Other languages
Chinese (zh)
Other versions
CN111312904A (en
Inventor
王照奎
廖良生
李萌
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Suzhou University
Original Assignee
Suzhou University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Suzhou University filed Critical Suzhou University
Priority to CN202010156937.3A priority Critical patent/CN111312904B/en
Publication of CN111312904A publication Critical patent/CN111312904A/en
Application granted granted Critical
Publication of CN111312904B publication Critical patent/CN111312904B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80Constructional details
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00Constructional details relating to the organic devices covered by this subclass
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02BCLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B10/00Integration of renewable energy sources in buildings
    • Y02B10/10Photovoltaic [PV]
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/549Organic PV cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Abstract

The invention belongs to the field of solar cells, and discloses a high-performance environment-friendly lead-based perovskite solar cell and a preparation method thereof. In the preparation method, a certain amount of chelating agent disodium ethylene diamine tetraacetic acid or 2, 3-dimercaptosuccinic acid is introduced into the lead-based perovskite precursor liquid, so that the crystallinity and crystal orientation of the lead-based perovskite thin film layer can be effectively optimized, the crystal boundary of the perovskite thin film is passivated, and the energy conversion efficiency of the perovskite thin film is improved. Meanwhile, when the device is decomposed, the chelating agent can be timely combined with lead ions to form a stable and soluble complex, and after being carelessly absorbed by a human body, the complex can be successfully metabolized by the human body and discharged along with urine, so that the harm to the human body is finally obviously reduced. The invention is beneficial to the commercial development of perovskite solar cells, and particularly promotes the application of perovskite indoor photovoltaic as energy supply of intelligent household terminals in the time of Internet of things.

Description

High-performance environment-friendly lead-based perovskite solar cell and preparation method thereof
Technical Field
The invention belongs to the field of solar cells, and particularly relates to a high-performance environment-friendly lead-based perovskite solar cell and a preparation method thereof.
Background
The energy problem is always the key research problem of the development of the human society, and the research and development of the solar photovoltaic device provides an effective solution for solving the energy shortage required by the development of the human. Among them, perovskite solar thin film cell devices have attracted wide attention due to their low cost and outstanding photoelectric properties, and have been developed rapidly. The energy conversion efficiency can reach more than 20% in the short-term development period. At present, the perovskite solar cell with high performance is mainly based on a lead-based perovskite thin film layer, but due to Pb 2+ The ions have a certain solubility in water, which causes serious influence on water and soil, and Pb 2+ The main symptoms of the existence of the compound are the damage to the nervous system, the hematopoietic system, the digestive system, the kidney system, the cardiovascular system, the endocrine system and the like, and the main pathological change is Pb 2+ Influence on metal ions and enzyme systems in the human body. At present, non-lead-tin-based perovskite is considered as an ideal substitute material for lead-based perovskite due to environmental friendliness, but the energy conversion efficiency is still low. Finding high photoelectric performance and environment-friendly photovoltaic materials becomes an application in the photovoltaic field, especially the indoor photovoltaic field.
The lead-based perovskite solar cell is a photovoltaic material which has the most potential to be commercially applied in a large scale at present, and is one of hot spots of research in the energy field at present. However, lead element contained in the lead-based perovskite is easily leaked into air in an ionic form, and harm to human health is caused. Reducing the lead ion content in the perovskite solar cell will in turn significantly affect the energy conversion efficiency of the photovoltaic device. Therefore, further development of a high-performance and environment-friendly lead-based perovskite solar cell has important significance for promoting development of the lead-based perovskite solar cell.
Disclosure of Invention
In order to solve the problems in the prior art, the invention aims to provide a high-performance environment-friendly lead-based perovskite solar cell and a preparation method thereof, a special processing technology is adopted, a certain amount of chelating agent disodium ethylene diamine tetraacetate or 2, 3-dimercaptosuccinic acid is introduced into a perovskite precursor solution, and the introduction of the two chelating agents can effectively passivate the crystal boundary of perovskite, enhance the charge transmission characteristic of the perovskite and obviously improve the energy conversion efficiency and stability of the device. Meanwhile, the perovskite decomposition and the lead leakage are caused by long-term use of the device, the chelating agent can be combined with lead ions in time to form a stable and soluble complex, and the complex can be successfully metabolized by a human body and discharged along with urine after being absorbed by the human body carelessly, so that the harm to the human body is remarkably reduced.
In order to achieve the purpose, the invention provides the following technical scheme:
the high-performance environment-friendly lead-based perovskite solar cell is characterized in that a chelating agent is added into the lead-based perovskite solar cell.
Further, the chelating agent is one or two of ethylene diamine tetraacetic acid or 2, 3-dimercaptosuccinic acid.
The preparation method of the lead-based perovskite solar cell comprises the following steps:
(1) Processing tin oxide or titanium oxide solution on a substrate base in a mode of a spin coating method, chemical deposition, ink-jet printing or roll-to-roll processing method to form a uniform electron transport layer film;
(2) Dissolving lead iodide in a mixed solution of dimethyl sulfoxide and dimethylformamide to form a first solution, and dissolving methyl ether ammonium iodide (FAI), methyl ammonium bromide (MABr), methyl ammonium chloride (MACl) and a chelating agent in isopropanol to form a second solution; carrying out spin coating, ink-jet printing or roll-to-roll processing on the first solution on the electron transmission layer, further depositing a second solution after annealing treatment, and obtaining a lead-based perovskite thin film layer through annealing treatment;
(3) 2,2', 7' -tetra [ N, N-di (4-methoxyphenyl) amino ] -9,9' -spirobifluorene film is processed on the perovskite film by spin coating, ink-jet printing or roll-to-roll processing, and a uniform hole transport layer is obtained without annealing;
(4) Processing the molybdenum trioxide modification layer on the hole transport layer by adopting an ink-jet printing or evaporation method;
(5) And processing the anode electrode on the molybdenum trioxide modification layer by adopting an ink-jet printing or evaporation method.
Further, the substrate base in the step (1) is ITO, FTO transparent glass or a flexible plastic conductive film substrate.
Further, the thickness of the electron transport layer in the step (1) is 40-50nm.
Further, the annealing temperature after the first solution is spin-coated in the step (2) is 70 ℃, and the time is 1min; the annealing temperature of the second solution in air is 150 ℃ and the time is 10 min.
Further, the thickness of the lead-based perovskite thin film layer in the step (2) is 300-400 nm.
Further, the thickness of the hole transport layer in the step (3) is 250-350nm.
Further, the thickness of the molybdenum trioxide modification layer in the step (4) is 8-10 nm.
Further, in the step (5), the anode electrode is Ag, cu or Au, and the thickness of the electrode is 60-100nm.
Has the beneficial effects that: compared with the prior art, the invention effectively passivates the crystal boundary of the perovskite, optimizes the crystallization performance, enhances the charge transmission characteristic of the perovskite and obviously improves the energy conversion efficiency and the stability of the lead-based perovskite photovoltaic device by introducing a certain amount of chelating agent disodium ethylene diamine tetraacetate or 2, 3-dimercaptosuccinic acid into the perovskite precursor solution. Meanwhile, perovskite decomposition and lead leakage are caused by long-term use of the device, most lead ions in the device prepared by the method can form stable and soluble complexes, the biotoxicity of the lead ions is reduced, the lead ions can be effectively metabolized after human body contact, and finally the harm to the human body is remarkably reduced. The lead-based perovskite prepared by the method effectively promotes the commercial development of perovskite solar cells, and particularly promotes the application of perovskite indoor photovoltaics of smart home terminals in the era of the Internet of things.
Drawings
Fig. 1 is a schematic structural diagram of a perovskite type solar cell manufactured by the preparation method of the invention.
FIG. 2 is a scanning electron microscope image of different types of perovskite thin films.
Fig. 3 is a diagram of pathological changes of zebra fish after treatment of the zebra fish by different types of perovskite aqueous solutions.
In the figure, 1 is a transparent substrate, 2 is a cathode electrode, 3 is an electron transport layer, 4 is a perovskite thin film, 5 and 6 are hole transport layers, and 7 is an anode electrode.
Detailed Description
Example 1
(1) Providing a fluorine-doped tin oxide (FTO) transparent conductive substrate, and performing standardized cleaning;
(2) 599 mg of lead iodide was dissolved in 1 mL of a mixed solution of dimethyl sulfoxide and dimethylformamide (volume ratio 5;
(3) Treating FTO with ozone for 30 min, then dropwise adding a tin oxide solution, rotating at the rotation speed of 4000 rpm for 40 s, then annealing at the temperature of 180 ℃ for 30 min to obtain a solidified electron transport layer;
(4) The lead-based perovskite thin film layer is prepared by a two-step method, the lead iodide solution rotates for 30 s at the rotating speed of 1500 rpm, the annealing temperature is 70 ℃, and the time is 1 min. Then adding an isopropanol solution of the ammonium salt of the ethylene diamine tetraacetic acid, rotating at the rotating speed of 1700rpm for 30 s, and annealing in the air at the temperature of 150 ℃ for 10min to obtain a lead-based perovskite thin film layer;
(5) Processing a hole transport layer 2,2', 7' -tetra [ N, N-di (4-methoxyphenyl) amino ] -9,9' -spirobifluorene by a spin coating method on the perovskite thin film, and rotating for 40 s at the rotating speed of 5000 rpm to obtain a uniform hole transport layer thin film;
(6) Preparing a hole transport layer molybdenum trioxide with the thickness of 10nm by adopting an evaporation method;
(7) The cathode electrode Ag is prepared by adopting an evaporation method, and the thickness of the cathode electrode Ag is 100nm.
Example 2
(1) Providing a fluorine-doped tin oxide (FTO) transparent conductive substrate, and performing standardized cleaning;
(2) 599 mg of lead iodide was dissolved in 1 mL of a mixed solution of dimethyl sulfoxide and dimethylformamide (volume ratio 5;
(3) Treating FTO with ozone for 30 min, then dropwise adding a tin oxide solution, rotating at the rotation speed of 4000 rpm for 40 s, then annealing at the temperature of 180 ℃ for 30 min to obtain a solidified electron transport layer;
(4) The lead-based perovskite thin film layer is prepared by a two-step method, the lead iodide solution rotates for 30 s at the rotating speed of 1500 rpm, the annealing temperature is 70 ℃, and the time is 1 min. Then adding an isopropanol solution of ammonium salt of 2, 3-dimercaptosuccinic acid, rotating at the rotating speed of 1700rpm for 30 s, annealing in air at the temperature of 150 ℃ for 10min, and obtaining a lead-based perovskite thin film layer;
(5) Processing a hole transport layer 2,2', 7' -tetra [ N, N-di (4-methoxyphenyl) amino ] -9,9' -spirobifluorene on the perovskite thin film by a spin coating method, and rotating at the rotating speed of 5000 rpm for 40 s to obtain a uniform hole transport layer thin film;
(6) Preparing a hole transport layer molybdenum trioxide with the thickness of 10nm by adopting an evaporation method;
(7) The cathode electrode Ag is prepared by adopting an evaporation method, and the thickness of the cathode electrode Ag is 100nm.
Example 3
(1) Providing a fluorine-doped tin oxide (FTO) transparent conductive substrate, and performing standardized cleaning;
(2) 599 mg of lead iodide was dissolved in 1 mL of a mixed solution of dimethyl sulfoxide and dimethylformamide (volume ratio 5;
(3) Treating FTO with ozone for 30 min, then dropwise adding a tin oxide solution, rotating at the rotating speed of 4000 rpm for 40 s, then annealing at the temperature of 180 ℃ for 30 min to obtain a cured electron transport layer;
(4) The lead-based perovskite thin film layer is prepared by a two-step method, the lead iodide solution rotates for 30 s at the rotating speed of 1500 rpm, the annealing temperature is 70 ℃, and the time is 1 min. Then adding an isopropanol solution of the ammonium salt of ethylene diamine tetraacetic acid, rotating at the rotating speed of 1700rpm for 30 s, annealing in air at the temperature of 150 ℃ for 10min, and obtaining a lead-based perovskite thin film layer;
(5) Processing a hole transport layer 2,2', 7' -tetra [ N, N-di (4-methoxyphenyl) amino ] -9,9' -spirobifluorene on the perovskite thin film by a spin coating method, and rotating at the rotating speed of 5000 rpm for 40 s to obtain a uniform hole transport layer thin film;
(6) Preparing a hole transport layer molybdenum trioxide with the thickness of 10nm by adopting an evaporation method;
(7) The cathode electrode Ag is prepared by adopting an evaporation method, and the thickness of the cathode electrode Ag is 100nm.
Comparative example 1
(1) Providing a fluorine-doped tin oxide (FTO) transparent conductive substrate, and performing standardized cleaning;
(2) 599 mg of lead iodide was dissolved in 1 mL of a mixed solution of dimethyl sulfoxide and dimethylformamide (volume ratio 5;
(3) Treating FTO with ozone for 30 min, then dropwise adding a tin oxide solution, rotating at the rotation speed of 4000 rpm for 40 s, then annealing at the temperature of 180 ℃ for 30 min to obtain a solidified electron transport layer;
(4) And (3) preparing the lead-based perovskite thin film layer by a two-step method, wherein a lead iodide solution rotates for 30 s at the rotating speed of 1500 rpm, the annealing temperature is 70 ℃, and the time is 1 min. Then, the isopropanol solution of ammonium salt rotates for 30 s at the rotating speed of 1700rpm, the annealing temperature in the air is 150 ℃, and the time is 10min, so that the lead-based perovskite thin film layer is obtained;
(5) Processing a hole transport layer 2,2', 7' -tetra [ N, N-di (4-methoxyphenyl) amino ] -9,9' -spirobifluorene on the perovskite thin film by a spin coating method, and rotating at the rotating speed of 5000 rpm for 40 s to obtain a uniform hole transport layer thin film;
(6) Preparing a hole transport layer molybdenum trioxide with the thickness of 10nm by adopting an evaporation method;
(7) The cathode electrode Ag is prepared by adopting an evaporation method, and the thickness of the cathode electrode Ag is 100nm.
The performance of the outdoor and indoor solar cells of the above examples is shown in table 1 below:
TABLE 1
Figure SMS_1
By comparing examples 1, 2 and 3, it can be seen that the addition of appropriate concentration (1 mg/mL) of disodium EDTA or 2, 3-dimercaptosuccinic acid can provide better photovoltaic properties, and that an excessive concentration (10 mg/mL) will reduce the photovoltaic properties of the device. Meanwhile, the energy conversion efficiency of the low-concentration (1 mg/mL) doped disodium ethylene diamine tetraacetate or 2, 3-dimercaptosuccinic acid is obviously improved compared with that of an undoped device. For both outdoor energy conversion efficiency and indoor conversion efficiency, the device performance of the lead-based perovskite battery is better optimized by the introduction of disodium ethylene diamine tetraacetate or 2, 3-dimercaptosuccinic acid than that of undoped lead-based perovskite battery.
The perovskite thin film crystal optimization of the above example is shown in fig. 2, and fig. 2 is the scanning electron microscope morphology of different types of perovskite thin films, (a) the crystal morphology of a pure perovskite of comparative example 1, (b) the crystal morphology of a perovskite of example 2 added with 1mg/mL of 2, 3-dimercaptosuccinic acid, (c) the crystal morphology of a perovskite of example 1 added with 1mg/mL of disodium ethylenediaminetetraacetate, and (d) the crystal morphology of a perovskite of example 3 added with 10 mg/mL of disodium ethylenediaminetetraacetate. As can be seen from the scanning electron microscope of the comparative example, the growth of the crystal morphology can be promoted no matter adding the ethylene diamine tetraacetic acid or the 2, 3-dimercaptosuccinic acid, and finally the crystal with better crystallization property is obtained. Meanwhile, if the doping proportion of the disodium ethylene diamine tetraacetate is increased, the appearance of the crystal is reduced relative to the appearance of the crystal with low concentration of 1mg/mL when the concentration is 10 mg/mL. The addition of the chelating agent disodium ethylene diamine tetraacetate or 2, 3-dimercaptosuccinic acid with proper concentration can effectively promote the growth of a crystal film.
The morphology of treated zebrafish after dissolution of the device in the above examples in an aqueous solution is shown in fig. 3, and fig. 3 shows the lesion morphology of zebrafish after treatment with different types of perovskite aqueous solutions, (a) the morphology of zebrafish after treatment with comparative pure perovskite, (b) the morphology of zebrafish after perovskite treatment with 1mg/mL of 2, 3-dimercaptosuccinic acid added in example 2, (c) the morphology of zebrafish after perovskite treatment with 1mg/mL of disodium ethylenediaminetetraacetate added in example 1, and (d) the morphology of zebrafish after perovskite treatment with 10 mg/mL of disodium ethylenediaminetetraacetate added in example 3. The biotoxicological analysis of the perovskite aqueous solution of the comparative example on the zebra fish can show that the zebra fish treated by the original perovskite solution has serious morbidity, curved spine and serious pericardial cyst. And the phenomenon can be effectively relieved by adding the disodium ethylene diamine tetraacetate or the 2, 3-dimercaptosuccinic acid, and finally the zebra fish with lighter morbidity is obtained. When the concentration of the disodium ethylene diamine tetraacetate is increased, the relative disease state of the zebra fish is further relieved. The fact shows that the harm of the perovskite film to the biological toxicity of the environment can be effectively relieved by adding a certain amount of disodium ethylene diamine tetraacetate or 2, 3-dimercaptosuccinic acid.

Claims (5)

1. A preparation method of a high-performance environment-friendly lead-based perovskite solar cell is characterized by comprising the following steps:
(1) Processing tin oxide or titanium oxide solution on a substrate base in a spin-coating method, a chemical deposition method, an ink-jet printing method or a roll-to-roll processing method to form a uniform electron transport layer film;
(2) Dissolving lead iodide in a mixed solution of dimethyl sulfoxide and dimethylformamide to form a first solution, and dissolving methyl ether ammonium iodide, methyl ammonium bromide, methyl ammonium chloride and a chelating agent in isopropanol to form a second solution; carrying out spin coating, ink-jet printing or roll-to-roll processing on the first solution on the electron transmission layer, further depositing a second solution after annealing treatment, and obtaining a lead-based perovskite thin film layer through annealing treatment; the chelating agent is disodium ethylene diamine tetraacetate or 2, 3-dimercaptosuccinic acid, and the concentration is 1mg/mL; the annealing temperature after the first solution is spin-coated is 70 ℃, and the time is 1min; the annealing temperature of the second solution in the air is 150 ℃, and the time is 10min; the thickness of the lead-based perovskite thin film layer is 300-400nm;
(3) 2,2', 7' -tetra [ N, N-di (4-methoxyphenyl) amino ] -9,9' -spirobi film is processed on the perovskite film by spin coating, ink-jet printing or roll-to-roll processing, and a uniform hole transport layer is obtained without annealing;
(4) Processing the molybdenum trioxide modification layer on the hole transport layer by adopting an ink-jet printing or evaporation method; the thickness of the molybdenum trioxide modification layer is 8-10nm;
(5) And processing the anode electrode on the molybdenum trioxide modification layer by adopting an ink-jet printing or evaporation method.
2. The preparation method according to claim 1, wherein the substrate base in the step (1) is ITO, FTO transparent glass or a flexible plastic conductive film substrate.
3. The method according to claim 2, wherein the thickness of the electron transport layer in the step (1) is 40 to 50nm.
4. The method according to claim 1, wherein the hole transport layer in the step (3) has a thickness of 250 to 350nm.
5. The method according to claim 1, wherein the anode electrode in step (5) is Ag, cu or Au, and the thickness of the electrode is 60-100mm.
CN202010156937.3A 2020-03-09 2020-03-09 High-performance environment-friendly lead-based perovskite solar cell and preparation method thereof Active CN111312904B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202010156937.3A CN111312904B (en) 2020-03-09 2020-03-09 High-performance environment-friendly lead-based perovskite solar cell and preparation method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202010156937.3A CN111312904B (en) 2020-03-09 2020-03-09 High-performance environment-friendly lead-based perovskite solar cell and preparation method thereof

Publications (2)

Publication Number Publication Date
CN111312904A CN111312904A (en) 2020-06-19
CN111312904B true CN111312904B (en) 2023-04-07

Family

ID=71147965

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202010156937.3A Active CN111312904B (en) 2020-03-09 2020-03-09 High-performance environment-friendly lead-based perovskite solar cell and preparation method thereof

Country Status (1)

Country Link
CN (1) CN111312904B (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113651825B (en) * 2021-08-17 2022-07-26 华侨大学 Fullerene derivative, preparation method thereof and perovskite solar cell
CN113809240A (en) * 2021-09-08 2021-12-17 中山大学 Method for passivating perovskite thin film layer and application of method in solar cell
CN115117247B (en) * 2022-06-23 2024-04-16 中国科学技术大学 Perovskite solar cell and preparation method thereof

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016009737A (en) * 2014-06-24 2016-01-18 株式会社リコー Method for manufacturing perovskite type solar battery
CN105831771A (en) * 2016-03-23 2016-08-10 江南大学 Probiotics and microelement dietary supplement with function of alleviating lead toxicity
CN106902777A (en) * 2017-04-21 2017-06-30 南京师范大学 A kind of magnetic dissaving polymer or derivatives thereof blood adsorbent for heavy metal and its preparation method and application
CN108183170A (en) * 2018-01-03 2018-06-19 苏州大学 A kind of perovskite material and its in solar cell application and the preparation method of solar cell
CN110085743A (en) * 2019-03-15 2019-08-02 北京宏泰创新科技有限公司 It is a kind of using two sulphur ene compounds as the solar battery of calcium titanium ore bed passivating material and preparation method

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016009737A (en) * 2014-06-24 2016-01-18 株式会社リコー Method for manufacturing perovskite type solar battery
CN105831771A (en) * 2016-03-23 2016-08-10 江南大学 Probiotics and microelement dietary supplement with function of alleviating lead toxicity
CN106902777A (en) * 2017-04-21 2017-06-30 南京师范大学 A kind of magnetic dissaving polymer or derivatives thereof blood adsorbent for heavy metal and its preparation method and application
CN108183170A (en) * 2018-01-03 2018-06-19 苏州大学 A kind of perovskite material and its in solar cell application and the preparation method of solar cell
CN110085743A (en) * 2019-03-15 2019-08-02 北京宏泰创新科技有限公司 It is a kind of using two sulphur ene compounds as the solar battery of calcium titanium ore bed passivating material and preparation method

Also Published As

Publication number Publication date
CN111312904A (en) 2020-06-19

Similar Documents

Publication Publication Date Title
CN111312904B (en) High-performance environment-friendly lead-based perovskite solar cell and preparation method thereof
CN108258128A (en) A kind of perovskite solar cell with interface-modifying layer and preparation method thereof
CN109461818A (en) A kind of efficient perovskite solar battery and preparation method thereof
CN108183170B (en) Perovskite material, application of perovskite material in solar cell and preparation method of solar cell
CN111180587B (en) Special doped perovskite solar cell and preparation method thereof
CN106549105B (en) A kind of conjugation fullerene/graphene film solar battery and preparation method thereof
CN104393175A (en) Organic solar cell and preparation method thereof
CN105470399A (en) Perovskite solar cell based on undoped organic hole transport layer and preparation method
CN112086562A (en) Semitransparent perovskite solar cell, component and preparation method
CN110335949A (en) A kind of unleaded perovskite preparation method of solar battery that organic amine induction perovskite light-absorption layer crystalline orientation is added
CN115440894A (en) Electronic transmission film layer and application
CN112993167B (en) Application of organic ammonium salt modified metal oxide nanoparticles in positive perovskite solar cell and preparation method of device
CN111933802B (en) Application of ionic liquid in preparation of perovskite photosensitive layer and perovskite solar cell
CN111223993B (en) Semitransparent perovskite solar cell with high open-circuit voltage
CN113421976A (en) Method for modifying tin dioxide by using L-cysteine and application of tin dioxide in perovskite solar cell
CN111063806B (en) Perovskite solar cell and preparation method thereof
CN113594369B (en) Boron Lewis acid doped organic solar cell active layer and preparation method and application thereof
CN115697010A (en) Inverted perovskite solar cell modified by multifunctional additive
CN116234331A (en) Perovskite solar cell based on benzamide bromine modification and preparation method thereof
CN113644199B (en) Perovskite solar cell with phytic acid dipotassium complexed with tin dioxide and preparation method thereof
CN112542550B (en) MXene-based high-efficiency perovskite solar cell and preparation method thereof
CN111326658B (en) Perovskite solar cell with nickel grid flexible electrode and preparation method thereof
CN111628085B (en) Organic solar cell based on double electron transport layers and preparation method thereof
CN100338265C (en) Process for electrodeposition preparation of cuprous sulfocyanide film in aqueous solution
CN116583126A (en) Perovskite solar cell with gold nanoparticle doped with tin dioxide electron transport layer and preparation method of perovskite solar cell

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant