CN111312863A - Protection process of selective emitter technology - Google Patents
Protection process of selective emitter technology Download PDFInfo
- Publication number
- CN111312863A CN111312863A CN202010273084.1A CN202010273084A CN111312863A CN 111312863 A CN111312863 A CN 111312863A CN 202010273084 A CN202010273084 A CN 202010273084A CN 111312863 A CN111312863 A CN 111312863A
- Authority
- CN
- China
- Prior art keywords
- selective emitter
- doping
- protection process
- ozone
- protective layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005516 engineering process Methods 0.000 title claims abstract description 14
- 238000000034 method Methods 0.000 title claims abstract description 14
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000011241 protective layer Substances 0.000 claims abstract description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 7
- 239000010703 silicon Substances 0.000 claims abstract description 7
- 230000001590 oxidative effect Effects 0.000 claims abstract description 3
- 239000003513 alkali Substances 0.000 abstract description 8
- 238000007517 polishing process Methods 0.000 abstract description 7
- 238000006243 chemical reaction Methods 0.000 abstract description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 239000010410 layer Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000005360 phosphosilicate glass Substances 0.000 description 1
- 238000013082 photovoltaic technology Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention provides a protection process of a selective emitter technology, which is characterized by comprising the following steps: and uniformly introducing ozone from the upper part of the silicon wafer of the doping region, and oxidizing the doping region to generate a protective layer. Wherein the concentration of the introduced ozone is 100-10000ppm, the time of the introduced ozone is 10-1000s, and the thickness of the generated protective layer is 2-20 nm. The protection process of the selective emitter technology realizes the protection of the high-doping area, so that the high-doping area still maintains high-concentration doping in the alkali polishing process, and the conversion efficiency of the solar cell is improved.
Description
Technical Field
The invention relates to the field of solar cell manufacturing, in particular to a protection process of a selective emitter technology.
Background
The selective emitter (SE-selective emitter) solar cell is characterized in that high-concentration doping is carried out on a contact part of a metal grid line and a silicon wafer and the vicinity of the contact part, and low-concentration doping is carried out in a region except an electrode, so that the contact resistance between the silicon wafer and the electrode can be reduced, the surface recombination can be reduced, the minority carrier lifetime is prolonged, and the conversion efficiency is improved. However, with the progress of the photovoltaic technology, there are some problems, such as using the laser SE technology in the alkali polishing process, damaging the phosphosilicate glass layer in the highly doped region due to laser doping, and the region is easily polished without the protection of the phosphosilicate layer in the alkali polishing process, so that the selective emitter technology loses advantages in the alkali polishing SE process.
Disclosure of Invention
In view of the above, an object of the present invention is to provide a protection process for a selective emitter technology, which is suitable for use in the selective emitter technology, wherein a protective layer is formed on a laser-doped silicon wafer, and the protective layer can effectively protect a laser-doped region and is not damaged during an alkali polishing process, so that the selective emitter technology can exert better advantages in the alkali polishing process, and the limitation of the selective emitter technology in the alkali polishing process is overcome, thereby improving the conversion efficiency of a solar cell. The specific scheme is as follows:
a protection process for selective emitter technology, characterized by: and uniformly introducing ozone from the upper part of the silicon wafer of the doping region, and oxidizing the doping region to generate a protective layer.
Further, the concentration of the ozone introduced was 100-10000 ppm.
Furthermore, the time for introducing the ozone is 10-1000 s.
Further, the thickness of the generated protective layer is 2-20 nm.
Additional aspects and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention.
Detailed Description
The following description is presented to disclose the invention so as to enable any person skilled in the art to practice the invention. The preferred embodiments in the following description are given by way of example only.
In the selective emitter technology of the embodiment, the diffusion sheet resistance before laser doping is 90-250 Ω/□, after laser doping, the diffusion sheet resistance of a doped region is 50-120 Ω/□, the laser doping width is 50-150 μm, the preferred diffusion sheet resistance before laser doping is 140 Ω/□, after laser doping, the diffusion sheet resistance of the doped region is 80 Ω/□, the laser doping width is 120 μm, ozone flows uniformly from the upper part of a silicon wafer of the doped region for oxidation protection, a protective layer is generated, wherein the ozone introduction concentration is controlled at 800ppm, the ozone introduction time is about 20s, and meanwhile, the protective layer with the thickness of 3nm is generated, so that the protection of the highly doped region is realized, the highly doped region is still kept with high-concentration doping in the alkali polishing process, and the conversion efficiency of the solar cell is improved.
It will be appreciated by persons skilled in the art that the embodiments of the invention described above are given by way of example only and are not limiting of the invention. The objects of the invention have been fully and effectively accomplished. The functional and structural principles of the present invention have been shown and described in the examples, and any variations or modifications of the embodiments of the present invention may be made without departing from the principles.
Claims (4)
1. A protection process for selective emitter technology, characterized by: and uniformly introducing ozone from the upper part of the silicon wafer of the doping region, and oxidizing the doping region to generate a protective layer.
2. The protection process for a selective emitter technique as claimed in claim 1, wherein the concentration of the introduced ozone is 100-10000 ppm.
3. The process according to claim 1, wherein the ozone is introduced for a time ranging from 10 to 1000 s.
4. A protection process for a selective emitter technique according to claim 1, wherein the thickness of the protective layer is 2-20 nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010273084.1A CN111312863A (en) | 2020-04-09 | 2020-04-09 | Protection process of selective emitter technology |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010273084.1A CN111312863A (en) | 2020-04-09 | 2020-04-09 | Protection process of selective emitter technology |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111312863A true CN111312863A (en) | 2020-06-19 |
Family
ID=71148259
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010273084.1A Pending CN111312863A (en) | 2020-04-09 | 2020-04-09 | Protection process of selective emitter technology |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111312863A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08335576A (en) * | 1995-06-06 | 1996-12-17 | Agency Of Ind Science & Technol | Silicon oxide film-forming method |
| CN204315591U (en) * | 2014-12-05 | 2015-05-06 | 广东爱康太阳能科技有限公司 | A kind of selective emitter crystal silicon solar batteries |
| CN108417474A (en) * | 2018-01-24 | 2018-08-17 | 锦州华昌光伏科技有限公司 | Crystalline silicon thermal oxidation technology, system and crystal silicon solar energy battery thermal oxidation technology |
| CN110676153A (en) * | 2019-09-20 | 2020-01-10 | 常州捷佳创精密机械有限公司 | Solar cell, ozone solution applying device and preparation method of solar cell |
| CN110752270A (en) * | 2019-09-20 | 2020-02-04 | 常州捷佳创精密机械有限公司 | Solar cell, gaseous ozone applying device and preparation method of solar cell |
-
2020
- 2020-04-09 CN CN202010273084.1A patent/CN111312863A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08335576A (en) * | 1995-06-06 | 1996-12-17 | Agency Of Ind Science & Technol | Silicon oxide film-forming method |
| CN204315591U (en) * | 2014-12-05 | 2015-05-06 | 广东爱康太阳能科技有限公司 | A kind of selective emitter crystal silicon solar batteries |
| CN108417474A (en) * | 2018-01-24 | 2018-08-17 | 锦州华昌光伏科技有限公司 | Crystalline silicon thermal oxidation technology, system and crystal silicon solar energy battery thermal oxidation technology |
| CN110676153A (en) * | 2019-09-20 | 2020-01-10 | 常州捷佳创精密机械有限公司 | Solar cell, ozone solution applying device and preparation method of solar cell |
| CN110752270A (en) * | 2019-09-20 | 2020-02-04 | 常州捷佳创精密机械有限公司 | Solar cell, gaseous ozone applying device and preparation method of solar cell |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20200619 |
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| RJ01 | Rejection of invention patent application after publication |