CN111312834A - Solar cell - Google Patents

Solar cell Download PDF

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Publication number
CN111312834A
CN111312834A CN201811426043.0A CN201811426043A CN111312834A CN 111312834 A CN111312834 A CN 111312834A CN 201811426043 A CN201811426043 A CN 201811426043A CN 111312834 A CN111312834 A CN 111312834A
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CN
China
Prior art keywords
type doped
solar cell
layer
perovskite light
conducting layer
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Pending
Application number
CN201811426043.0A
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Chinese (zh)
Inventor
邱继霆
连詹田
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Chunghwa Picture Tubes Ltd
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Chunghwa Picture Tubes Ltd
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Priority to CN201811426043.0A priority Critical patent/CN111312834A/en
Publication of CN111312834A publication Critical patent/CN111312834A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/048—Encapsulation of modules
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Abstract

The invention discloses a solar cell, which comprises conductive glass, an N-type doped electron conduction layer, an N-type doped perovskite light absorption layer, a hole conduction layer and a metal electrode. The N-type doped electron conduction layer is arranged on the conductive glass, wherein the electron conduction layer comprises a first N-type dopant. The N-type doped perovskite light absorption layer is arranged on the N-type doped electron conduction layer, wherein the N-type doped perovskite light absorption layer comprises a second N-type dopant. The hole conducting layer is configured on the N-type doped perovskite light absorption layer. The metal electrode is disposed on the hole conducting layer.

Description

Solar cell
Technical Field
The present invention relates to solar cells, and more particularly to perovskite solar cells.
Background
With the development of science and technology, environmental protection is becoming an important issue, and therefore green energy is increasingly paid attention. Among various green energy sources, solar energy has the advantages of clean, safe and abundant sources, and is one of the actively developing technologies.
In recent years, new perovskite solar cells (perovskite solar cells) in thin film type have been developed, and the perovskite-structured absorption layer of the cell core has a relatively good absorption capability in the visible light range, so that the cells can produce good photoelectric conversion efficiency through the unique optical characteristics of the perovskite material.
In a solar cell, the interface tightness between an electron conducting layer and a light absorbing layer is one of the main reasons for affecting the efficiency of the solar cell. If the interface contact resistance between the electron conducting layer and the light absorbing layer is too large, too much electric energy is consumed in the electron transferring process, so that the conversion efficiency of the solar cell is reduced. Therefore, a solution for reducing the contact resistance between the electron conducting layer and the light absorbing layer is needed.
Disclosure of Invention
The invention aims to provide a solar cell capable of improving conversion efficiency.
According to an aspect of the present invention, there is provided a solar cell including a conductive glass, an N-type doped electron conducting layer, an N-type doped perovskite light absorbing layer, a hole conducting layer, and a metal electrode. The N-type doped electron conduction layer is arranged on the conductive glass, wherein the N-type doped electron conduction layer comprises a first N-type dopant. The N-type doped perovskite light absorption layer is arranged on the N-type doped electron conduction layer, wherein the N-type doped perovskite light absorption layer comprises a second N-type dopant. The hole conducting layer is configured on the N-type doped perovskite light absorption layer. The metal electrode is disposed on the hole conducting layer.
In one or more embodiments of the invention, the doping concentration of the first N-type dopant of the N-type doped electron conducting layer is higher than the doping concentration of the second N-type dopant of the N-type doped perovskite light absorption layer.
In one or more embodiments of the invention, the N-type doped electron conducting layer comprises N-type doped amorphous silicon.
In one or more embodiments of the present invention, the N-type doped electron conducting layer is made of a porous material, and the porous material comprises a plurality of pores.
In one or more embodiments of the invention, a portion of the N-type doped perovskite light absorption layer is located in the pores.
In one or more embodiments of the invention, the porous material is porous amorphous silicon.
In one or more embodiments of the invention, the porosity of the N-type doped electron conducting layer is 25% -80%.
In one or more embodiments of the invention, the N-type doped perovskite light absorbing layer comprises CsPbI3。
In one or more embodiments of the invention, the thickness of the N-type doped perovskite light absorption layer is 300nm to 500 nm.
In one or more embodiments of the present invention, the first N-type dopant and the second N-type dopant are phosphorus.
In one or more embodiments of the invention, the thickness of the N-type doped electron conducting layer is 50nm to 80 nm.
Compared with the prior art, the solar cell can improve the contact resistance between the electron conduction layer and the perovskite light absorption layer, and improve the conversion efficiency of the solar cell.
Drawings
Fig. 1 shows a cross-sectional view of a solar cell 100 according to an embodiment of the invention.
Fig. 2 is a partial cross-sectional view of a solar cell according to a comparative example.
Fig. 3 shows a partial cross-sectional view of the solar cell 100 according to an embodiment of the invention.
Fig. 4 shows a partial cross-sectional view of the solar cell 100 according to an embodiment of the invention.
Detailed Description
The following disclosure provides many different embodiments, or examples, for implementing different features of the invention. Specific examples of components and arrangements are described below to simplify the present disclosure. Of course, these examples are merely examples and are not intended to be limiting. For example, in the following description, formation of a first feature over or on a second feature encompasses embodiments in which the first feature is in direct contact with the second feature, and embodiments in which the first feature is not in direct contact with the second feature are also encompassed.
Moreover, the present disclosure may repeat reference numerals and/or letters in the various examples. This repetition is for the purpose of simplicity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed. Furthermore, the formation, connection, and/or coupling of a feature to another feature in the present disclosure may include embodiments in which the features are formed in direct contact, and may also include embodiments in which additional features are formed interposing the features, such that the features may not be in direct contact. Further, spatially relative terms, such as "under," "below," "lower," "above," "upper," and the like, may be used herein to describe one element or feature's relationship to another element (or elements) or feature (or features) as illustrated in the figures for ease of description. Spatially relative terms are intended to encompass different orientations of the elements in use or operation.
Referring to fig. 1, a cross-sectional view of a solar cell 100 according to an embodiment of the invention is shown. The solar cell 100 includes an electrically conductive glass 120, an electron conducting layer 130, a perovskite light absorbing layer 140, a hole conducting layer 150, and a metal electrode 160. The electron conducting layer 130 is disposed on the conductive glass 120, and the perovskite light absorbing layer 140 is disposed on the electron conducting layer 130. In addition, the hole transporting layer 150 is disposed on the perovskite light absorbing layer 140, and the metal electrode 160 is disposed on the hole transporting layer 150.
In some embodiments, the conductive glass 120 may be fluorine-doped tin oxide (FTO).
The electron conducting layer 130 is doped N-type, and thus can be also referred to as N-type doped electron conducting layer. In more detail, the dopant of the electron conducting layer 130 is phosphorus, arsenic, antimony or other N-type dopant. In some embodiments, electron conducting layer 130 may be N-type doped amorphous silicon. The electronically conductive layer 130 can be deposited on the conductive glass 120 using any suitable method, such as chemical vapor deposition, and the like. In certain embodiments, electron conducting layer 130 has a thickness of 50nm to 80nm, such as 60nm or 70 nm.
The perovskite light absorption layer 140 is N-type doped, and thus may also be referred to as an N-type doped perovskite light absorption layer. In some embodiments, the dopant of the perovskite light absorbing layer 140 is phosphorus, arsenic, antimony, or other N-type dopant. The perovskite is a ceramic oxide material with a molecular formula ABX3, wherein A and B are two cations with different sizes, and X is a cation-bonded cationAn anion. In one embodiment, the material of the perovskite light absorption layer 140 is CsPbI3. In some embodiments, the doping concentration of the electron conducting layer 130 is higher than the doping concentration of the perovskite light absorbing layer 140. Notably, the dopant of the electron conducting layer 130 may be the same as or different from the dopant of the perovskite light absorbing layer 140. In certain embodiments, the thickness of the perovskite light absorption layer 140 is 300nm to 500nm, such as 350nm, 400nm, or 450 nm.
The hole conducting layer 150 can be poly (3-hexylthiophene) (poly (3-hexylthiophene-2,5-diyl), P3HT), for example. In some embodiments, hole conducting layer 150 has a thickness of 50nm to 100nm, such as 60nm, 70nm, 80nm, or 90 nm.
In some embodiments, the metal electrode 160 has a thickness of about 50nm to about 200nm, such as about 100 nm. In some other embodiments, the solar cell 100 further comprises a cover glass 110, the cover glass 110 being located below the conductive glass 120. The cover glass 110 may provide better mechanical strength to the solar cell 100, maintain light transmittance, and prevent damage to the remaining elements of the solar cell 100.
Referring to fig. 2, a partial cross-sectional view of a solar cell according to a comparative example is shown. For the purpose of illustration, fig. 2 only shows the electron conducting layer 230 and the perovskite light absorbing layer 240. Unlike the embodiment shown in fig. 1, the perovskite light absorption layer 240 shown in fig. 2 is not N-doped. As shown, N-type dopants are distributed only in the electron conducting layer 230. Since the electron conducting layer 230 and the perovskite light absorbing layer 240 are formed by two different deposition processes, there is an interface between the electron conducting layer 230 and the perovskite light absorbing layer 240. Furthermore, since surface defects may be formed at the interface when the perovskite light absorption layer 240 is deposited, the surface roughness is high, so that the electron conductive layer 230 and the perovskite light absorption layer 240 have poor adhesion and a high contact resistance therebetween. The higher contact resistance results in more power being consumed by the current passing through the interface, thereby reducing the overall conversion efficiency of the solar cell.
Referring to fig. 3, a partial cross-sectional view of a solar cell 100 according to an embodiment of the invention is shown. For the purpose of illustration, fig. 3 only shows the electron conducting layer 130 and the perovskite light absorbing layer 140. The electron conducting layer 130 and the perovskite light absorption layer 140 are doped with N-type dopants. As shown, N-type dopants are distributed in the electron conducting layer 130 and the perovskite light absorbing layer 140. The electron conductive layer 130 and the perovskite light absorption layer 140 are doped with an N-type dopant, so that the interface between the electron conductive layer 130 and the perovskite light absorption layer 140 is more adhesive. In other words, due to the N-type doping, the perovskite light absorption layer 140 is less likely to form defects on the interface when deposited, so that the surface roughness is reduced, and the contact resistance generated when a current passes through the interface can be improved, thereby improving the conversion efficiency of the solar cell.
Further, as shown in fig. 3, a continuous conductive region 170 is formed between the electron conductive layer 130 and the perovskite light absorbing layer 140. The continuous conductive region 170 is filled with N-type dopants, so that the continuous conductive region 170 facilitates the conduction of electrons. That is, the continuous conductive region 170 can also reduce the resistance of electrons passing through the interface between the electron conductive layer 130 and the perovskite light absorption layer 140, thereby improving the conductive efficiency.
Furthermore, since the electron conducting layer 130 and the perovskite light absorbing layer 140 are both doped with N-type dopants, the energy of the Lowest Unoccupied Molecular Orbital (LUMO) of the electron conducting layer 130 and the perovskite light absorbing layer 140 can be made closer by adjusting the doping concentrations of the electron conducting layer 130 and the perovskite light absorbing layer 140, which is more favorable for electron transmission, and thus, the resistance of electrons passing through the interface can be reduced, and the efficiency of the solar cell can be improved.
Referring to fig. 4, a partial cross-sectional view of a solar cell 100 according to an embodiment of the invention is shown. Unlike fig. 3, the electron conducting layer 130 shown in fig. 4 is a porous material, and the porous material includes a plurality of pores. Since a spin coating process may be used to form the perovskite light absorbing layer 140, a portion of the perovskite light absorbing layer 140 may be formed in the pores of the electron conductive layer 130. In other words, a portion of the perovskite light absorbing layer 140 is embedded in the electron conducting layer 130. Therefore, the contact area between the electron conducting layer 130 and the perovskite light absorption layer 140 is greatly increased, so that the contact resistance between the two is greatly reduced, and the conversion efficiency of the solar cell is improved. In some embodiments, the electron conducting layer 130 is porous amorphous silicon (Porousporus silicon).
In some embodiments, the porosity of the electron conducting layer 130 is 25% -80%, such as 30%, 40%, 50%, 60%, or 70%. If the porosity of the electron conductive layer 130 is too low, for example, less than 25%, the increase in the contact area between the electron conductive layer 130 and the perovskite light absorption layer 140 is small, and the improvement in the contact resistance is less significant. If the porosity of the electron conductive layer 130 is too high, for example, higher than 80%, the structure of the electron conductive layer 130 is unstable and the mechanical properties are weak.
In some embodiments, the electron conducting layer 130 and the perovskite light absorbing layer 140 may also be doped with N-type dopants, so that the continuous conducting region 170 is also formed. By increasing the contact area between the electron conductive layer 130 and the perovskite light absorption layer 140 and forming the continuous conductive region 170, the contact resistance between the electron conductive layer 130 and the perovskite light absorption layer 140 can be greatly reduced.
The solar cell provided by the invention can improve the contact resistance between the electron conduction layer and the perovskite light absorption layer, and improve the conversion efficiency of the solar cell.
The foregoing outlines features of several embodiments or examples so that those skilled in the art may better understand the aspects of the present disclosure. Those skilled in the art should appreciate that they may readily use the present disclosure as a basis for designing or modifying other processes and structures for carrying out the same purposes and/or achieving the same advantages of the embodiments introduced herein. Those skilled in the art should also realize that such equivalent constructions do not depart from the spirit and scope of the present disclosure, and that they may make various changes, substitutions, and alterations herein without departing from the spirit and scope of the present disclosure.

Claims (11)

1. A solar cell, comprising:
a conductive glass;
an N-type doped electron conducting layer disposed on the conductive glass, wherein the N-type doped electron conducting layer comprises a first N-type dopant;
an N-type doped perovskite light absorption layer disposed on the N-type doped electron conducting layer, wherein the N-type doped perovskite light absorption layer comprises a second N-type dopant;
a hole conducting layer disposed on the N-type doped perovskite light absorption layer; and
and a metal electrode disposed on the hole conducting layer.
2. The solar cell according to claim 1, wherein the doping concentration of the first N-type dopant of the N-type doped electron conducting layer is higher than the doping concentration of the second N-type dopant of the N-type doped perovskite light absorption layer.
3. The solar cell of claim 1, wherein the N-type doped electron conducting layer comprises N-type doped amorphous silicon.
4. The solar cell of claim 1, wherein the N-type doped electron conducting layer is made of a porous material, the porous material comprising a plurality of pores.
5. The solar cell of claim 4, wherein a portion of the N-type doped perovskite light absorption layer is located in the plurality of pores.
6. The solar cell of claim 4, wherein the porous material is porous amorphous silicon.
7. The solar cell of claim 4, wherein the porosity of the N-type doped electron conducting layer is between 25% and 80%.
8. The solar cell of claim 1, wherein the solar cell is characterized byWherein the N-type doped perovskite light absorption layer comprises CsPbI3。
9. The solar cell according to claim 1, wherein the thickness of the N-type doped perovskite light absorption layer is 300nm to 500 nm.
10. The solar cell of claim 1, wherein the first N-type dopant and the second N-type dopant are phosphorus.
11. The solar cell of claim 1, wherein the N-type doped electron conducting layer has a thickness of 50nm to 80 nm.
CN201811426043.0A 2018-11-27 2018-11-27 Solar cell Pending CN111312834A (en)

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105552231A (en) * 2016-03-02 2016-05-04 宁波大学 Perovskite solar cell and preparation method therefor
EP3051600A1 (en) * 2015-01-30 2016-08-03 Consejo Superior De Investigaciones Científicas Heterojunction device
CN106299126A (en) * 2015-06-08 2017-01-04 南开大学 Perovskite battery of amorphous silicon membrane electric transmission Rotating fields and preparation method thereof
US20170125172A1 (en) * 2015-10-30 2017-05-04 The University Of Akron Perovskite hybrid solar cells
CN108832007A (en) * 2018-07-04 2018-11-16 河南师范大学 A kind of preparation method of perovskite and semi-conductor type silicon hybrid solar cell

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3051600A1 (en) * 2015-01-30 2016-08-03 Consejo Superior De Investigaciones Científicas Heterojunction device
CN106299126A (en) * 2015-06-08 2017-01-04 南开大学 Perovskite battery of amorphous silicon membrane electric transmission Rotating fields and preparation method thereof
US20170125172A1 (en) * 2015-10-30 2017-05-04 The University Of Akron Perovskite hybrid solar cells
CN105552231A (en) * 2016-03-02 2016-05-04 宁波大学 Perovskite solar cell and preparation method therefor
CN108832007A (en) * 2018-07-04 2018-11-16 河南师范大学 A kind of preparation method of perovskite and semi-conductor type silicon hybrid solar cell

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