CN111312721A - Display panel - Google Patents
Display panel Download PDFInfo
- Publication number
- CN111312721A CN111312721A CN201911081382.4A CN201911081382A CN111312721A CN 111312721 A CN111312721 A CN 111312721A CN 201911081382 A CN201911081382 A CN 201911081382A CN 111312721 A CN111312721 A CN 111312721A
- Authority
- CN
- China
- Prior art keywords
- layer
- thin film
- display area
- film transistor
- display panel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010410 layer Substances 0.000 claims abstract description 193
- 239000010409 thin film Substances 0.000 claims abstract description 65
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 239000012044 organic layer Substances 0.000 claims abstract description 20
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- 239000002346 layers by function Substances 0.000 claims description 12
- 239000011229 interlayer Substances 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 10
- 238000005538 encapsulation Methods 0.000 claims description 7
- 238000002161 passivation Methods 0.000 claims description 5
- 239000004642 Polyimide Substances 0.000 claims description 3
- 229910044991 metal oxide Inorganic materials 0.000 claims description 3
- 150000004706 metal oxides Chemical class 0.000 claims description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- 229920001721 polyimide Polymers 0.000 claims description 3
- 239000002861 polymer material Substances 0.000 claims description 3
- 229920005591 polysilicon Polymers 0.000 claims description 3
- -1 acryl Chemical group 0.000 claims description 2
- 238000004806 packaging method and process Methods 0.000 claims description 2
- 239000010408 film Substances 0.000 abstract description 12
- 239000011368 organic material Substances 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000005452 bending Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The invention provides a display panel, which comprises a flexible substrate, a buffer layer, a thin film transistor layer, a planarization layer, a first electrode and a pixel limiting layer, wherein the thin film transistor structure and an inorganic film layer in a folding display area are removed, and an organic material is filled in the thin film transistor structure and the inorganic film layer to form a first organic layer, so that when the display panel is bent, the film layer in the folding display area cannot be broken; and the thin film transistor of the main display area close to the folding display area is used as a device for driving the picture display of the folding display area without influencing the picture display of the folding display area, and in the main display area, the first electrode is connected with the adjacent thin film transistor, namely the connection corresponding relation extends towards the periphery.
Description
Technical Field
The invention relates to the technical field of display, in particular to a display panel.
Background
With the continuous evolution of the display technology, compared with the traditional rigid display screen, the flexible display screen has the advantages of light weight, thin shape and variability, and the like, so the market occupation rate is increased year by year. A folding display is one of the flexible screen application modes. To minimize the thickness of the folded display, it is more competitive if the bend radius of the screen fold area is smaller. Whether liquid crystal display or mainThe conventional thin film transistor structure includes a plurality of inorganic thin films formed by chemical vapor deposition, and the material is generally SiO2And SiON or SiNx, which are brittle materials, and when the bending radius of the display screen is gradually reduced, cracks are easily caused, which may cause failure of the thin film transistor or breakage of the metal wires, thereby affecting the performance of the display panel.
Therefore, it is desirable to provide a display panel, which is less broken when the display panel is folded and has improved stability.
Disclosure of Invention
The invention aims to provide a display panel, which is characterized in that a thin film transistor structure and an inorganic film layer of a folding display area are removed, and an organic material is filled to form an organic layer, so that when the display panel is bent, the film layer of the folding display area is not broken, and the stability of the display panel is improved.
To achieve the above object, the present invention provides a display panel, comprising: a flexible substrate having a main display area and a folding display area; the buffer layer is arranged on one side of the flexible substrate; the thin film transistor layer is arranged on one side, away from the flexible substrate, of the buffer layer and is provided with a plurality of thin film transistors arranged in the main display area, the thin film transistor layer is provided with a first through hole corresponding to the folding display area, and a first organic layer is arranged in the first through hole; the planarization layer is arranged on one side of the thin film transistor layer, which is far away from the buffer layer; and the first electrodes are arranged on one side of the planarization layer, which is far away from the thin film transistor layer, and are connected with the thin film transistors.
Further, in the folding display area, the first electrode is connected with the thin film transistor of the main display area close to the folding display area; in the main display area, the first electrode is connected with the adjacent thin film transistor.
Further, the first through hole penetrates through the thin-film transistor layer and the buffer layer to the surface of the flexible substrate.
Further, the material of the first organic layer includes a polymer material of acryl or polyimide.
Further, still include: the supporting layer is arranged on one side, far away from the buffer layer, of the flexible substrate; the pixel limiting layer is arranged on the first electrode and the planarization layer and provided with a groove, and the first electrode is exposed in the groove; an organic functional layer disposed on the pixel defining layer and on the first electrode in the groove; the second electrode is arranged on one side, far away from the planarization layer, of the organic functional layer; and the at least one packaging layer is arranged on one side of the second electrode, which is far away from the organic functional layer.
Further, still include: the support layer is provided with a second through hole corresponding to the folding display area.
Further, the encapsulation layer includes: a first inorganic layer; a second organic layer disposed on one side of the first inorganic layer; a second inorganic layer, the second organic layer being distal to a side of the first inorganic layer.
Further, the thin-film transistor layer includes: the active layer is arranged on one side, far away from the flexible substrate, of the buffer layer; the gate insulating layer is arranged on one side, far away from the buffer layer, of the active layer; the grid electrode layer is arranged on one side, far away from the active layer, of the grid electrode insulating layer; an interlayer insulating layer disposed on the buffer layer, the active layer, and the gate layer; the source drain metal layer is arranged on the interlayer insulating layer; and the passivation layer is arranged on the source drain metal layer and the interlayer insulating layer.
Further, the material of the active layer includes polysilicon or metal oxide.
Further, the source-drain metal layer is connected with the first electrode.
The invention has the beneficial effects that: the invention provides a display panel, which is characterized in that a thin film transistor structure and an inorganic film layer of a folding display area are removed, and organic materials are filled in the thin film transistor structure and the inorganic film layer to form a first organic layer, so that the film layer of the folding display area cannot be broken when the display panel is bent; and the thin film transistor of the display area close to the folding display area is used as a device for driving the picture display of the folding display area without influencing the picture display of the folding display area, and in the main display area, the first electrode is connected with the adjacent thin film transistor, namely the connection corresponding relation extends towards the periphery.
Drawings
The invention is further described below with reference to the figures and examples.
Fig. 1 is a schematic structural diagram of a display panel according to the present invention;
FIG. 2 is a layout diagram of a main display area and a foldable display area of a display panel according to the present invention;
FIG. 3 is a circuit layout diagram of a display panel according to the present invention;
a display panel 100; a main display area 110; the folding display area 120;
a support layer 101; a flexible substrate 102; a buffer layer 103;
thin-film-transistor layer 104; a planarization layer 105; a first electrode 106;
a pixel defining layer 107; an organic functional layer 108; a second electrode 109;
a first through-hole 112; an active layer 1041; a gate insulating layer 1042;
a gate layer 1043; an interlayer insulating layer 1044; a source drain metal layer 1045;
a passivation layer 1046; slotting 1071; a second through hole 1011;
a first organic layer 111; and a thin film transistor 113.
Detailed Description
In order that the present invention may be better understood, the following examples are included to further illustrate the invention, but not to limit its scope.
The following description of the embodiments refers to the accompanying drawings for illustrating the specific embodiments in which the invention may be practiced. The directional terms used in the present invention, such as "up", "down", "front", "back", "left", "right", "top", "bottom", etc., refer to the directions of the attached drawings. Accordingly, the directional terms used are used for explanation and understanding of the present invention, and are not used for limiting the present invention.
The present invention provides a display panel including: the display device comprises a flexible substrate, a buffer layer, a thin film transistor layer, a planarization layer and a first electrode.
The flexible substrate is provided with a main display area and a folding display area; the buffer layer is arranged on one side of the flexible substrate; the thin film transistor layer is arranged on one side of the buffer layer, which is far away from the flexible substrate, and is provided with a plurality of thin film transistors arranged in the main display area, the thin film transistor layer is provided with a first through hole corresponding to the folding display area, and a first organic layer is arranged in the first through hole; the planarization layer is arranged on one side of the thin film transistor layer far away from the buffer layer; the first electrodes are arranged on one side, far away from the thin film transistor layer, of the planarization layer, and the first electrodes are connected with the thin film transistors.
As shown in fig. 1, an embodiment of the invention provides a display panel 100, including: support layer 101, flexible substrate 102, buffer layer 103, thin-film transistor layer 104, planarization layer 105, first electrode 106, pixel defining layer 107, organic functional layer 108, second electrode 109, and an encapsulation layer.
The flexible substrate 102 is disposed on the support layer 101, and has a main display area 110 and a folding display area 120; the buffer layer 103 is disposed on one side of the flexible substrate 102.
The display panel 100 can be folded for display or unfolded for display, and when folded, it has a bending region (i.e. the folding display region 120 of the present invention), and the present invention also mainly optimizes the structure of the folding display region 120.
The folding display area 120 of the present invention depends on the display panel 100 with different sizes, which mainly depends on how many folds the display panel 100 can be folded. As shown in fig. 2, the display panel 100 of the present invention can be folded 2 times, i.e. the folding display area 120 is disposed in the middle of the display panel 100, so that the display panel 100 shown in fig. 1 only shows half of the structure thereof, and the other half of the structure is substantially similar to the structure shown in fig. 1, so that fig. 1 does not fully show all the structures of the display panel 100. In other embodiments, the display panel 100 of the present invention may also be folded 3 or more times.
The thin film transistor layer 104 is disposed on a side of the buffer layer 103 away from the flexible substrate 102, and has a plurality of thin film transistors 113 disposed in the main display area 110, and the thin film transistor layer 104 has a first through hole 112 corresponding to the folded display area 120.
The first through hole 112 penetrates through the thin-film transistor layer 104 and the buffer layer 103 to the surface of the flexible substrate 102.
A first organic layer 111 is disposed in the first via 112; the material of the first organic layer 111 includes: acrylic or polyimide polymer materials.
Therefore, the display panel of the present invention removes the thin film transistor 113 and the inorganic film layer of the folded display region 120 through the yellow/etching process, and fills the organic layer material, thereby preventing the folded display region 120 from generating cracks after being bent, and further improving the stability of the display panel 100.
And the support layer 101 has a second through hole 1011 corresponding to the foldable display area 120, so as to prevent the film from breaking when the display panel is folded and bent, thereby improving the stability of the display panel 100.
The thin-film-transistor layer 104 includes: an active layer 1041, a gate insulating layer 1042, a gate layer 1043, an interlayer insulating layer 1044, a source-drain metal layer 1045, and a passivation layer 1046.
The active layer 1041 is arranged on one side of the buffer layer 103 far away from the flexible substrate 102; the material of the active layer 1041 includes polysilicon or metal oxide.
The gate insulating layer 1042 is disposed on a side of the active layer 1041 away from the buffer layer 103.
The gate layer 1043 is disposed on a side of the gate insulating layer 1042 away from the active layer 1041;
the interlayer insulating layer 1044 is disposed on the buffer layer 103, the active layer 1041, and the gate layer 1043.
The source-drain metal layer 1045 is disposed on the interlayer insulating layer 1044. The source/drain metal layer 1045 has a source line and a drain line (the drawing is not labeled, and generally, the source line is on the left side of the source/drain metal layer 1045, and the drain line is on the right side), and the source line and the drain line are connected to the active layer 1041.
The passivation layer 1046 is disposed on the source/drain metal layer 1045 and the interlayer insulating layer 1044.
The planarization layer 105 is disposed on a side of the thin-film transistor layer 104 away from the buffer layer 103.
The first electrode 106 is disposed on a side of the planarization layer 105 away from the thin-film transistor layer 104, and the first electrode 106 is connected to the thin-film transistor 113.
The first electrode 106 is an anode, the material of the first electrode 106 is indium tin oxide, and the first electrode 106 is connected to the source/drain metal layer 1045.
Since the first electrode 106 is connected to the thin film transistor 113 near the folded display region 120 in the folded display region 120, specifically to the adjacent drain trace.
Since the thin film transistors 113 are in a one-to-one correspondence relationship with the first electrodes 106, and the thin film transistors 113 corresponding to the first electrodes 106 located in the folded display region 120 are disposed near the edge of the folded display region 120; in the main display area 110, the first electrode 106 is connected to the adjacent thin film transistor 113, that is, the connected corresponding relationship extends toward the periphery, that is, the first electrode 106 is connected to the adjacent thin film transistor 113, specifically, connected to the adjacent drain trace.
As shown in fig. 3, the circuit layout of the thin film transistor 113 and the light emitting unit 121 of the display panel of the present invention includes the structure of the first electrode 106.
The thin film transistor 113 is connected to the data line 122 disposed in the vertical direction and the scan line 123 disposed in the horizontal direction, respectively.
In the folded display region 120, there are no thin film transistors 113 and capacitor structures, and thus the light emitting unit is connected to the adjacent thin film transistors 113 located near the folded display region 120 in the main display region 110. Since the thin film transistors 113 and the light emitting cells are in a one-to-one correspondence relationship, that is, the connection correspondence relationship between the light emitting cells of the main display area 110 and the thin film transistors 113 extends toward the periphery, that is, the light emitting cells connect the adjacent thin film transistors 113.
The pixel defining layer 107 is disposed on the first electrode 106 and the planarization layer 105, and has a slot 1071, and the first electrode 106 is exposed in the slot 1071.
The organic functional layer 108 is provided on the pixel defining layer 107 and on the first electrode 106 in the slit 1071; the organic functional layer 108 is an OLED functional device, and includes a hole transport layer, a light emitting layer, and an electron transport layer stacked in sequence.
The second electrode 109 is disposed on a side of the organic functional layer 108 away from the planarization layer 105; the second electrode 109 is a cathode.
The encapsulating layer is disposed on a side of the second electrode 109 away from the organic functional layer 108, and the number of the encapsulating layers is not limited in the present invention; the encapsulation layer is used to protect the display panel 100 from the interference of external water and oxygen. Since the encapsulation layer is located at the outermost layer, the drawing of the encapsulation layer is omitted in fig. 1 in order to clearly show the internal structure of the display panel.
The encapsulation layer includes: a first inorganic layer, a second organic layer, and a second inorganic layer.
The second organic layer is arranged on one side of the first inorganic layer; second inorganic layer the second organic layer is distal to the side of the first inorganic layer.
The invention provides a display panel 100, which is characterized in that a thin film transistor 113 structure and an inorganic film layer in a folding display area 120 are moved out, and organic materials are filled to form a first organic layer, so that when the display panel 100 is bent, the film layer of the folding display area 120 cannot be broken; and the thin film transistor 113 of the main display area close to the folded display area 120 is used as a device for driving the display of the picture of the folded display area 120 without affecting the display of the picture of the folded display area 120, and in the main display area 110, the first electrode 106 is connected with the adjacent thin film transistor 113, that is, the connected corresponding relation extends towards the periphery.
It should be noted that many variations and modifications of the embodiments of the present invention fully described are possible and are not to be considered as limited to the specific examples of the above embodiments. The above examples are given by way of illustration of the invention and are not intended to limit the invention. In conclusion, the scope of the present invention should include those changes or substitutions and modifications which are obvious to those of ordinary skill in the art.
Claims (10)
1. A display panel, comprising:
a flexible substrate having a main display area and a folding display area;
the buffer layer is arranged on one side of the flexible substrate;
the thin film transistor layer is arranged on one side, away from the flexible substrate, of the buffer layer and is provided with a plurality of thin film transistors arranged in the main display area, the thin film transistor layer is provided with a first through hole corresponding to the folding display area, and a first organic layer is arranged in the first through hole;
the planarization layer is arranged on one side of the thin film transistor layer, which is far away from the buffer layer;
and the first electrodes are arranged on one side of the planarization layer, which is far away from the thin film transistor layer, and are connected with the thin film transistors.
2. The display panel according to claim 1,
in the folding display area, the first electrode is connected with the thin film transistor of the main display area close to the folding display area;
in the main display area, the first electrode is connected with the adjacent thin film transistor.
3. The display panel according to claim 1,
the first through hole penetrates through the thin film transistor layer and the buffer layer to the surface of the flexible substrate.
4. The display panel according to claim 1,
the material of the first organic layer includes a polymer material of acryl or polyimide.
5. The display panel according to claim 2, further comprising:
the supporting layer is arranged on one side, far away from the buffer layer, of the flexible substrate;
the pixel limiting layer is arranged on the first electrode and the planarization layer and provided with a groove, and the first electrode is exposed in the groove;
an organic functional layer disposed on the pixel defining layer and on the first electrode in the groove;
the second electrode is arranged on one side, far away from the planarization layer, of the organic functional layer;
and the at least one packaging layer is arranged on one side of the second electrode, which is far away from the organic functional layer.
6. The display panel according to claim 5, further comprising:
the support layer is provided with a second through hole corresponding to the folding display area.
7. The display panel according to claim 5,
the encapsulation layer includes:
a first inorganic layer;
a second organic layer disposed on one side of the first inorganic layer;
a second inorganic layer, the second organic layer being distal to a side of the first inorganic layer.
8. The display panel of claim 2, wherein the thin-film transistor layer comprises:
the active layer is arranged on one side, far away from the flexible substrate, of the buffer layer;
the gate insulating layer is arranged on one side, far away from the buffer layer, of the active layer;
the grid electrode layer is arranged on one side, far away from the active layer, of the grid electrode insulating layer;
an interlayer insulating layer disposed on the buffer layer, the active layer, and the gate layer;
the source drain metal layer is arranged on the interlayer insulating layer;
and the passivation layer is arranged on the source drain metal layer and the interlayer insulating layer.
9. The display panel according to claim 8,
the material of the active layer comprises polysilicon or metal oxide.
10. The display panel according to claim 8,
the source drain metal layer is connected with the first electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911081382.4A CN111312721A (en) | 2019-11-07 | 2019-11-07 | Display panel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911081382.4A CN111312721A (en) | 2019-11-07 | 2019-11-07 | Display panel |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111312721A true CN111312721A (en) | 2020-06-19 |
Family
ID=71159880
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201911081382.4A Pending CN111312721A (en) | 2019-11-07 | 2019-11-07 | Display panel |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111312721A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104752365A (en) * | 2013-12-27 | 2015-07-01 | 昆山国显光电有限公司 | Flexible display and manufacturing method thereof |
| CN107204357A (en) * | 2017-07-05 | 2017-09-26 | 武汉华星光电半导体显示技术有限公司 | A kind of flexible display panels and preparation method thereof, flexible display apparatus |
| CN110211992A (en) * | 2018-02-28 | 2019-09-06 | 三星显示有限公司 | Show equipment |
-
2019
- 2019-11-07 CN CN201911081382.4A patent/CN111312721A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104752365A (en) * | 2013-12-27 | 2015-07-01 | 昆山国显光电有限公司 | Flexible display and manufacturing method thereof |
| CN107204357A (en) * | 2017-07-05 | 2017-09-26 | 武汉华星光电半导体显示技术有限公司 | A kind of flexible display panels and preparation method thereof, flexible display apparatus |
| CN110211992A (en) * | 2018-02-28 | 2019-09-06 | 三星显示有限公司 | Show equipment |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US11430840B2 (en) | Large area organic light-emitting diode display | |
| US10707429B2 (en) | Flexible display panel and flexible display apparatus | |
| US11963435B2 (en) | Flexible display panel and fabricating method thereof, flexible display apparatus | |
| US10930887B2 (en) | Flexible organic light emitting display device having a dam in a folding region | |
| US20200127231A1 (en) | Display device | |
| WO2018205651A1 (en) | Oled touch-control display panel and manufacturing method therefor, and touch-control display apparatus | |
| CN101626029B (en) | Organic light emitting display apparatus and method of manufacturing thereof | |
| WO2020143433A1 (en) | Array substrate, preparation method thereof, and related device | |
| US11963381B2 (en) | Display substrate and display panel with barrier separated from pixel | |
| US20200027940A1 (en) | Display panel, method for manufacturing the same and display device | |
| CN106328671A (en) | Flexible organic light emitting diode display device and method of fabricating the same | |
| US9680128B2 (en) | Foldable organic light emitting display device | |
| TWI596755B (en) | Organic light emitting diode display and method for manufacturing the same | |
| TWI575732B (en) | Pixel structure and display device | |
| KR101957547B1 (en) | Display panel | |
| TW201639172A (en) | Pixel structure and display panel | |
| US11043545B2 (en) | Display substrate, fabricating method thereof, and display device | |
| WO2020143024A1 (en) | Array substrate and method for manufacturing same, and display panel | |
| CN110707126B (en) | Array substrate and manufacturing method thereof | |
| TWI555183B (en) | Thin film transistor and pixel structure | |
| CN110854129A (en) | TFT array substrate and OLED panel | |
| US11488982B2 (en) | Display panel and organic light emitting display panel | |
| JP2019003026A (en) | Display | |
| CN111312721A (en) | Display panel | |
| US11195900B2 (en) | Array substrate with protrusion patterns and method of fabricating same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20200619 |