CN111312524A - Molybdenum disulfide composite counter electrode of quantum dot sensitized solar cell and preparation method thereof - Google Patents
Molybdenum disulfide composite counter electrode of quantum dot sensitized solar cell and preparation method thereof Download PDFInfo
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- RWVGQQGBQSJDQV-UHFFFAOYSA-M sodium;3-[[4-[(e)-[4-(4-ethoxyanilino)phenyl]-[4-[ethyl-[(3-sulfonatophenyl)methyl]azaniumylidene]-2-methylcyclohexa-2,5-dien-1-ylidene]methyl]-n-ethyl-3-methylanilino]methyl]benzenesulfonate Chemical compound [Na+].C1=CC(OCC)=CC=C1NC1=CC=C(C(=C2C(=CC(C=C2)=[N+](CC)CC=2C=C(C=CC=2)S([O-])(=O)=O)C)C=2C(=CC(=CC=2)N(CC)CC=2C=C(C=CC=2)S([O-])(=O)=O)C)C=C1 RWVGQQGBQSJDQV-UHFFFAOYSA-M 0.000 claims description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 4
- 229910016002 MoS2a Inorganic materials 0.000 claims description 4
- 239000012298 atmosphere Substances 0.000 claims description 4
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- 238000001035 drying Methods 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 3
- 229910001887 tin oxide Inorganic materials 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 2
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- -1 transition metal sulfides Chemical class 0.000 description 6
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 5
- 239000008367 deionised water Substances 0.000 description 4
- 229910021641 deionized water Inorganic materials 0.000 description 4
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- VDQVEACBQKUUSU-UHFFFAOYSA-M disodium;sulfanide Chemical compound [Na+].[Na+].[SH-] VDQVEACBQKUUSU-UHFFFAOYSA-M 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
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- 239000001856 Ethyl cellulose Substances 0.000 description 1
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
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- 230000005693 optoelectronics Effects 0.000 description 1
- SOQBVABWOPYFQZ-UHFFFAOYSA-N oxygen(2-);titanium(4+) Chemical compound [O-2].[O-2].[Ti+4] SOQBVABWOPYFQZ-UHFFFAOYSA-N 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2022—Light-sensitive devices characterized by he counter electrode
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/542—Dye sensitized solar cells
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Hybrid Cells (AREA)
Abstract
The invention discloses a molybdenum disulfide composite counter electrode of a quantum dot sensitized solar cell and a preparation method thereof. The molybdenum disulfide composite counter electrode consists of a conductive substrate and MoS2Composition of/CNTs composite, MoS2the/CNTs composite material is synthesized by a simple one-step hydrothermal method, and MoS is subjected to a drop coating method2the/CNTs composite is deposited on a conductive substrate to make a counter electrode. MoS of the invention2CNTs in/CNTs counter electrode are uniformly wound on flower-shaped MoS2On the microspheres. MoS2the/CNTs counter electrode charge transfer impedance Rct is 1.39 omega, and the exchange current density J0Is 11.48mA cm‑2And has excellent electrocatalytic activity. At 100mW cm‑2Under conditions of (1) based on MoS2The quantum dot sensitized solar cell assembled by the/CNTs composite counter electrode has better photoelectric property and open-circuit voltage Voc0.620V, short-circuit current density JscIs 20.16mA cm‑2The photoelectric conversion efficiency η was 5.05%.
Description
Technical Field
The invention belongs to the technical field of quantum dot sensitized solar cells, and relates to a molybdenum disulfide composite counter electrode of a quantum dot sensitized solar cell and a preparation method thereof.
Background
Quantum Dot Sensitized Solar Cells (QDSSCs) serve as third-generation solar cells and have the advantages of being environment-friendly, low in material cost, easy to prepare, high in theoretical photoelectric conversion efficiency and the like. A typical QDSSCs consists of a photoanode comprising a quantum dot sensitized thin film of semiconducting oxide, a polysulfide electrolyte and a Counter Electrode (CE) for catalyzing polysulfide ions.
Nowadays, the practically highest achieved photoelectric conversion efficiency is far lower than the highest theoretical conversion efficiency (44%) of quantum dot sensitized solar cells. The photoelectric conversion efficiency of the quantum dot sensitized solar cell is closely related to the performances of the counter electrode and the photo-anode. The counter electrode functions to collect electrons from an external circuit and to reduce polysulfide ions in the electrolyte, which requires good conductivity and electrocatalytic activity for the counter electrode material. Therefore, the development of a counter electrode having high conductivity and electrocatalytic activity is one of the solutions to the low photoelectric conversion efficiency of QDSSCs.
At present, transition metal sulfides (e.g., MoS)2、MoSe2And WS2) Transition metal carbides (e.g., Mo)2C) Transition metal nitrides (e.g., Mo)2N), noble metals, conductive polymers and carbon materials can be used as counter electrode materials for third generation solar cells (e.g., QDSSCs and DSSCs). Molybdenum disulfide (MoS)2) Is a cheap and environment-friendly two-dimensional transition metal sulfide material, has a homowork structure similar to graphene, and is formed by two layers of sulfur and a layer of molybdenum, a covalent bond is formed in a Mo-S layer, and MoS is2The layers are bonded together by weak van der waals forces, and are suitable for the fields of photovoltaic devices and photoelectrocatalysis. Flower-shaped MoS is synthesized by Shane T.Finn by adopting hydrothermal method2As the counter electrode of the QDSSCs, a photoelectric conversion efficiency of 1.21% was achieved. Vu HongVinh Quy et al reported MoS for the electrodeposition preparation of QDSSCs2For the electrode, the efficiency was 3.69%. On the one hand, the research shows that MoS2Exhibits excellent electrocatalytic activity in a quantum dot sensitized solar cell, and the otherFlour, MoS2Poor conductivity limits the photoelectric conversion efficiency of quantum dot sensitized solar cells, based on MoS2Can improve the interface of the counter electrode and the electrolyte
Catalytic activity of reduction. Based on MoS2/CuS，MoS2CNTs-RGO and MoS2Graphene counter-electrode assembled quantum dot sensitized solar cells, achieving 5%, 3.44% and 2.21% photoelectric conversion efficiencies, respectively (Chaitanya Krishna Kamaja, Rami Red devillalli, and Manjusha V.Shelke, Chemeselectogram, Volume4, Issue8, August 2017, Pages 1984-.
Disclosure of Invention
The invention aims to provide a molybdenum disulfide composite counter electrode of a quantum dot sensitized solar cell with excellent electrocatalytic activity and a preparation method thereof.
The technical scheme for realizing the purpose of the invention is as follows:
the preparation method of the molybdenum disulfide composite counter electrode of the quantum dot sensitized solar cell comprises the following specific steps:
step 1, mixing sodium molybdate dihydrate, thiourea and carbon nano tubes in a mass ratio of 0.25: 0.4: 0.01-0.02, adding carbon nano tubes into a mixed solution of sodium molybdate dihydrate and thiourea, uniformly mixing by ultrasonic, carrying out homogeneous hydrothermal reaction at 180-200 ℃, washing with ethanol and water after the reaction is finished, drying, and calcining at 500-600 ℃ in an inert atmosphere to obtain MoS2a/CNTs composite;
step 2, MoS2Dispersing the/CNTs composite material in a mixed solution of ethanol and terpineol, performing ultrasonic treatment to obtain a uniformly dispersed suspension, dripping the suspension on the surface of an FTO (fluorine-doped tin oxide) conductive substrate, heating to remove the ethanol and the terpineol, and preparing MoS (MoS) of the quantum dot sensitized solar cell2/CNTs composite pairAnd an electrode.
Preferably, in the step 1, the ultrasonic mixing time is 5-10 min.
Preferably, in step 1, the hydrothermal reaction time is 24 hours or more.
Preferably, in the step 1, in the homogeneous reaction process, the rotating speed is 3-5 r/min.
Preferably, in step 1, the inert atmosphere is nitrogen or argon.
Preferably, in the step 1, the calcination time is 2-3 h.
Preferably, in the step 2, the volume ratio of ethanol to terpineol in the mixed solution of ethanol and terpineol is 8-9: 1-2.
Preferably, in the step 2, the heating temperature is 230-250 ℃.
The invention also provides a MoS based on the above2The quantum dot sensitized solar cell of the/CNTs composite counter electrode comprises MoS2a/CNTs composite counter electrode, a TiO2/CdS/CdSe/ZnS photo-anode and S2n-/S2-A polysulfide electrolyte.
Compared with the prior art, the invention has the following advantages:
(1) and MoS2MoS as a counter electrode compared to a carbon nanotube counter electrode2the/CNTs composite counter electrode has smaller charge transfer resistance (R) in polysulfide electrolytect1.39 Ω), faster charge transfer rate, and greater exchange current density (J)0＝11.48mA cm-2) Shows more excellent electrocatalytic activity;
(2) and based on MoS2Compared with quantum dot sensitized solar cells assembled by counter electrodes and carbon nanotube counter electrodes, the quantum dot sensitized solar cells based on MoS2The quantum dot sensitized solar cell assembled by the/CNTs composite counter electrode has higher photoelectric conversion efficiency (5.05%).
Drawings
FIG. 1 is a MoS2X-ray powder diffraction pattern of/CNTs composite material.
FIG. 2 is a MoS2Scanning electron microscope images of the/CNTs composite material.
FIG. 3 is a MoS2Electrochemical impedance spectrum (a) and an enlarged view (b) of the/CNTs composite counter electrode.
FIG. 4 is a MoS2Bode plot of/CNTs composite counter electrode.
FIG. 5 is a MoS2Tafel polarization curve of/CNTs composite counter electrode.
FIG. 6 is based on MoS2And the photocurrent density-photovoltage curve of the quantum dot sensitized solar cell assembled by the/CNTs composite counter electrode.
Detailed Description
The present invention will be described in more detail with reference to the following examples and the accompanying drawings.
Example 1
(one) MoS2Preparation of/CNTs composite counter electrode
1) Cleaning of conductive substrates
And (3) performing ultrasonic treatment on the FTO transparent conductive substrate for 15min by using washing powder, deionized water, acetone and ethanol respectively, cleaning, storing the FTO transparent conductive substrate in an ethanol solution, and sealing.
2)MoS2Preparation of/CNTs composite counter electrode
Step 1, MoS2Preparation of/CNTs composite material: 0.005g, 0.01g, 0.02g and 0.03g of carbon nano tube are respectively added into a mixed solution containing 0.25g of sodium molybdate dihydrate and 0.4g of thiourea, the mixture is uniformly mixed by ultrasonic, homogeneous hydrothermal reaction is carried out at 200 ℃, after the reaction is finished, ethanol and water are used for washing, drying is carried out, and then calcination is carried out at 500 ℃ in nitrogen atmosphere to obtain MoS2CNTs composite, respectively designated MoS2/CNTs-1，MoS2/CNTs-2，MoS2CNTs-3 and MoS2CNTs-4 composite material;
step 2, MoS2Dispersing the/CNTs composite material in a mixed solution of ethanol and terpineol with a volume ratio of 8:2, performing ultrasonic treatment to obtain a uniformly dispersed suspension, dripping the suspension on the surface of an FTO (fluorine-doped tin oxide) conductive substrate, heating at 240 ℃ for 30min to remove the ethanol and the terpineol, and preparing the quantum dot sensitized solar cell MoS2a/CNTs composite counter electrode.
(di) TiO2Preparation of/CdS/CdSe/ZnS photo-anode
TiO2The preparation of a/CdS/CdSe/ZnS photoanode is referred to in the literature (Chandu V.V.Muralee Gopi, SeenuRavi, et al, Scientific Reports volume 7, Article number:46519(2017)) with the following differences:
1)TiO2and (4) preparing slurry. TiO used in the invention2The raw materials of the sizing agent comprise 55g of terpineol, 0.5g of ethyl cellulose and 1.2g of nano titanium dioxide P25 powder, the heating temperature is 130 ℃, and TiO is prepared2And (3) slurry.
2)TiO2And (5) manufacturing a film. Fabrication of photoanode TiO by Spin coating method2Calcining the film in a box type furnace at 500 ℃ for 30min at the heating rate of 5 ℃/min to prepare TiO2A film.
3) And (4) depositing CdS quantum dots. CdS quantum dots were deposited by sequential ionic layer adsorption and reaction method (SILAR): will carry TiO2FTO conductive glass of the film is immersed in 0.1M Cd (CH)3COO)2·2H2Dissolving in O-methanol for 1min, taking out, washing with water, soaking in water for 1min, air drying, and soaking in 0.1M Na2S·9H2Dissolving O-methanol in water (1:1) for 1min, washing with water, soaking in water for 1min, and air drying. The process needs to be circulated for 12 times to prepare TiO2a/CdS electrode.
4) Deposition of CdSe quantum dots. Deposition of CdSe quantum dots on TiO by Chemical Bath Deposition (CBD)2and/CdS covered FTO conductive substrate. Firstly, NaSeSO is prepared according to the following steps3Solution: taking 0.3M Na2SO3And 0.1M Se in 400mL of aqueous solution, and refluxing for 7h at 70 ℃ to obtain NaSeSO3And (3) solution. Then, the TiO thus obtained is subjected to a thermal treatment2Cds electrode immersion Cd (CH)3COO)2·2H2O methanol solution for 1min, taking out the electrode, washing, soaking in water for 1min, air drying, and soaking in NaSeSO3And (3) carrying out water bath at 50 ℃ for 40min in the solution, taking out the electrode after the water bath is finished, washing with deionized water, soaking in the deionized water for 1min, and airing. The process needs to be repeated 3 times to obtain TiO2a/CdS/CdSe electrode.
5) And deposition of a ZnS passivation layer. ZnS passivationThe deposition method of the layer is the same as the deposition method of CdS quantum dots (CBD). Only the solution needs to be changed into 0.1M Zn (CH)3COO)2·2H2O methanol solution and 0.1M Na2S·9H2O methanol and water (1: 1). The process is repeated 2 times to obtain TiO2a/CdS/CdSe/ZnS photo-anode.
Preparation of polysulfide electrolyte
(IV) MoS2Performance test of virtual symmetrical battery assembled by/CNTs composite counter electrode
Mixing MoS2Scraping the/CNTs composite counter electrode into an electrode with a square active area of 0.4cm multiplied by 0.4cm, adhering the left, the lower and the right of the active area by using packaging glue, and injecting 1-2 drops of polysulfide electrolyte into the MoS by using a needle injector2The surface of an active area of a/CNTs composite counter electrode is immersed in the electrolyte for 3-5 min, and then MoS is added2And aligning and buckling the active area of the/CNTs composite counter electrode, and then clamping and fixing the upper side and the lower side by using a dovetail clamp to complete the assembly of the virtual symmetrical battery. The assembled virtual symmetric cell was tested for Electrochemical Impedance Spectroscopy (EIS), Bode plots (Bode plots), and Tafel polarization curves (Tafel polarization curves).
FIG. 1 is a MoS2X-ray powder diffraction pattern of/CNTs composite material. The four diffraction peaks at the positions of 13.42 °, 32.36 °, 38.44 ° and 57.68 ° 2 θ values can be attributed to MoS2The (002), (100), (103) and (110) crystal planes of the hexagonal phase, which is in good agreement with standard card (JCPDF 75-1539). The diffraction peaks at 25.48 ° and 42.84 ° 2 θ are attributed toThe (002) and (100) crystal planes of CNTs. MoS2the/CNTs composite material has CNTs and MoS2All features of the diffraction peaks.
FIG. 2 is a MoS2Scanning electron microscope images of the/CNTs composite material. MoS can be seen from the graphs (a, b)2Are closely packed flower-like microspheres. From the graphs (c, d), it can be observed that the carbon nanotubes are relatively uniformly wound around the MoS2Flower-shaped microspheres.
FIG. 3 is a MoS2Electrochemical impedance spectrum (a) and an enlarged view (b) of the/CNTs composite counter electrode. As shown in fig. 3, MoS2And the charge transfer resistance R of CNTsct116.95 Ω and 13.38 Ω, MoS, respectively2CNTs-2 and MoS2the/CNTs-3 composite counter electrode has charge transfer resistances of 1.39 omega and 4.22 omega respectively and has smaller RctShows that for polysulfide ions
The reduction of (a) has the best electrocatalytic activity (specific performance parameters are shown in table 1).
FIG. 4 is a MoS2Bode plot of/CNTs composite counter electrode. The electrocatalytic activity of the counter electrode is related to the frequency value corresponding to the peak phase of the counter electrode, and to CNTs and MoS2Comparison with electrode, MoS2CNTs-2 and MoS2The peak phase of the/CNTs-3 composite counter electrode corresponds to a frequency value in a higher region, indicating S for polysulfide ions2 n -The reduction of (a) has better electrocatalytic activity.
FIG. 5 is a MoS2Tafel polarization curve of/CNTs composite counter electrode. As can be seen in FIG. 5, it is related to CNTs and MoS2Comparison with electrode, MoS2CNTs-2 and MoS2the/CNTs-3 composite counter electrode has larger exchange current density (J)0Are respectively 11.48mAcm-2And 10.08mA cm-2) Indicating that it is at the counter electrode/electrolyte interface for polysulfide ions
Has higher electrocatalytic activity (performance parameters are shown in Table 1).
TABLE 1 electrochemical impedance and Tafel parameters of virtually symmetrical cells assembled with different pairs of electrodes
(V) assembling and testing the quantum dot sensitized solar cell
The method for assembling the quantum dot sensitized solar cell is the same as the above method, but one of the MoS is used2the/CNTs composite counter electrode is replaced by TiO2a/CdS/CdSe/ZnS photo-anode. The assembled quantum dot sensitized solar cell is in AM1.5 (100 mWcm)-2) Testing a photocurrent density-photovoltage curve under simulated sunlight.
TABLE 2 photoelectric performance parameters of quantum dot sensitized solar cells assembled based on various counter electrodes
| Counter electrode | Jsc(mA cm-2) | Voc(V) | FF | η(％) |
| CNTs | 13.15 | 0.490 | 0.374 | 2.41 |
| MoS2 | 9.86 | 0.452 | 0.330 | 1.47 |
| MoS2/CNTs-1 | 9.42 | 0.482 | 0.357 | 1.62 |
| MoS2/CNTs-2 | 20.16 | 0.620 | 0.404 | 5.05 |
| MoS2/CNTs-3 | 18.32 | 0.557 | 0.405 | 4.12 |
| MoS2/CNTs-4 | 15.44 | 0.491 | 0.328 | 2.49 |
FIG. 6 is based on MoS2The quantum dot sensitized solar cell assembled by the/CNTs composite counter electrode has a photocurrent density-photovoltage (J-V) curve. Under standard test conditions (AM1.5, 100 mWcm)-2) Lower, baseIn CNTs, MoS2、MoS2CNTs-2 and MoS2Quantum dot sensitized solar cell assembled by/CNTs-3 composite counter electrode and having open circuit voltage (V)oc) 0.490V, 0.452V, 0.620V and 0.557V, respectively, short-circuit current density (J)sc) Are respectively 13.15mA cm-2、9.86mA cm-2、20.16mA cm-2And 18.32mA cm-2The photoelectric conversion efficiencies (η) were 2.41%, 1.47%, 5.05%, and 4.12%, respectively, from which it was found that MoS is based on2CNTs-2 and MoS2The quantum dot sensitized solar cell assembled by the/CNTs-3 composite counter electrode has higher photoelectric conversion efficiency, and shows better photoelectric property. (see Table 2 for details of optoelectronic parameters).
Claims (10)
1. The preparation method of the molybdenum disulfide composite counter electrode of the quantum dot sensitized solar cell is characterized by comprising the following specific steps of:
step 1, mixing sodium molybdate dihydrate, thiourea and carbon nano tubes in a mass ratio of 0.25: 0.4: 0.01-0.02, adding carbon nano tubes into a mixed solution of sodium molybdate dihydrate and thiourea, uniformly mixing by ultrasonic, carrying out homogeneous hydrothermal reaction at 180-200 ℃, washing with ethanol and water after the reaction is finished, drying, and calcining at 500-600 ℃ in an inert atmosphere to obtain MoS2a/CNTs composite;
step 2, MoS2Dispersing the/CNTs composite material in a mixed solution of ethanol and terpineol, performing ultrasonic treatment to obtain a uniformly dispersed suspension, dripping the suspension on the surface of an FTO (fluorine-doped tin oxide) conductive substrate, heating to remove the ethanol and the terpineol, and preparing MoS (MoS) of the quantum dot sensitized solar cell2a/CNTs composite counter electrode.
2. The preparation method according to claim 1, wherein in the step 1, the ultrasonic mixing time is 5-10 min.
3. The production method according to claim 1, wherein the hydrothermal reaction time in step 1 is 24 hours or longer.
4. The preparation method according to claim 1, wherein in the step 1, the rotation speed is 3-5 r/min in the homogeneous reaction process.
5. The preparation method according to claim 1, wherein in the step 1, the inert atmosphere is nitrogen or argon, and the calcination time is 2-3 h.
6. The preparation method according to claim 1, wherein in the step 2, the volume ratio of ethanol to terpineol in the mixed solution of ethanol and terpineol is 8-9: 1-2.
7. The method according to claim 1, wherein the heating temperature in step 2 is 230 to 250 ℃.
8. MoS produced by the method according to any one of claims 1 to 72a/CNTs composite counter electrode.
9. MoS according to claim 82And the/CNTs composite counter electrode is a quantum dot sensitized solar cell.
10. The quantum dot sensitized solar cell according to claim 9, comprising MoS2CNTs composite counter electrode, TiO2a/CdS/CdSe/ZnS photoanode and
a polysulfide electrolyte.
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| CN111900408A (en) * | 2020-08-04 | 2020-11-06 | 四川轻化工大学 | MoS for lithium ion battery2@ C composite negative electrode material and preparation method thereof |
| CN115323429A (en) * | 2022-09-05 | 2022-11-11 | 深圳先进技术研究院 | Preparation method of quantum dot sensitized composite photo-anode, quantum dot sensitized composite photo-anode and application |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111900408A (en) * | 2020-08-04 | 2020-11-06 | 四川轻化工大学 | MoS for lithium ion battery2@ C composite negative electrode material and preparation method thereof |
| CN115323429A (en) * | 2022-09-05 | 2022-11-11 | 深圳先进技术研究院 | Preparation method of quantum dot sensitized composite photo-anode, quantum dot sensitized composite photo-anode and application |
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