CN111312326A - Flash memory life testing method and device, power acquisition terminal and storage medium - Google Patents
Flash memory life testing method and device, power acquisition terminal and storage medium Download PDFInfo
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- CN111312326A CN111312326A CN202010158853.3A CN202010158853A CN111312326A CN 111312326 A CN111312326 A CN 111312326A CN 202010158853 A CN202010158853 A CN 202010158853A CN 111312326 A CN111312326 A CN 111312326A
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Abstract
The embodiment of the invention provides a flash memory life test method, a flash memory life test device, a power acquisition terminal and a storage medium, which relate to the field of power acquisition terminals, and the method is applied to any power acquisition terminal and comprises the following steps: determining a flash memory life test area corresponding to any one power acquisition terminal according to the environment identification parameters; the environment identification parameter and the life flash memory test area have a corresponding relation; acquiring a zone capacity value, a block capacity value and actual accumulated erasing times of a flash memory service life test zone corresponding to any one power acquisition terminal; when the block capacity value is larger than a preset threshold value, determining the service life value of the flash memory corresponding to any one power acquisition terminal according to the zone capacity value, the block capacity value and the actual accumulated erasing times within the test time period; according to the invention, different power acquisition terminal products are distinguished by setting the environment identification parameter, so that the problem that all products cannot be compatible in the prior art is solved, and the purpose of effectively and efficiently testing the service life of the flash memory by various power acquisition terminal products is realized.
Description
Technical Field
The invention relates to the field of power acquisition terminals, in particular to a flash memory life testing method and device, a power acquisition terminal and a storage medium.
Background
With the rapid development of power acquisition terminal products, most of chips for storing system data and user data in the terminal products are implemented by using a flash memory (NAND FLASH), so that the flash memory storage is very important for the system security of the whole power equipment. The flash memory is used as a main device for storing various data of the terminal, the erasing frequency is limited, and the service life of the flash memory can be influenced if the flash memory is erased frequently. Therefore, the detection of the service life of the flash memory needs to be emphasized in a new product testing stage, a production stage and a field operation stage, so that if the service life of the flash memory can be detected in the using process, corresponding measures can be taken before failure occurs so as to avoid loss of data loss.
At present, the traditional flash memory life testing method is to compile an independent testing program for testing, which causes redundancy of testing codes and large maintenance amount, and meanwhile, the method cannot be compatible with all platform products (concentrators, special transformers, communication modules and the like), and is not beneficial to effective and efficient evaluation of the life of various products.
Disclosure of Invention
In view of this, the invention provides a flash memory life testing method, a flash memory life testing device, a power acquisition terminal and a storage medium, which are used for solving the problems that the existing testing method cannot be compatible with all platforms and is not beneficial to effective and efficient evaluation of the life of various products.
In order to solve the problem, the invention adopts the following technical scheme:
in a first aspect, the invention provides a method for testing the service life of a flash memory, which is applied to any power acquisition terminal; the flash memory service life test areas corresponding to any one type of power acquisition terminal are different; the method comprises the following steps: determining a flash memory life test area corresponding to any one power acquisition terminal according to the environment identification parameters; the environment identification parameter and the flash memory life test area have a corresponding relation; acquiring a zone capacity value, a block capacity value and actual accumulated erasing times of a flash memory service life test zone corresponding to any one power acquisition terminal; and when the block capacity value is larger than a preset threshold value, determining the service life of the flash memory corresponding to any one type of power acquisition terminal according to the zone capacity value, the block capacity value and the actual accumulated erasing times within a test time period. Optionally, the step of determining the life value of the flash memory corresponding to any one of the power acquisition terminals according to the zone capacity value, the block capacity value and the actual accumulated erasing times during the test time period includes: determining the number of the flash memory blocks corresponding to any one of the power acquisition terminals according to the zone capacity value and the block capacity value; and determining the service life value of the flash memory corresponding to any one type of the power acquisition terminal according to the test duration and the number of the blocks.
Optionally, the life value of the flash memory corresponding to any one of the power acquisition terminals satisfies the following relation: life value s ═ unit N (((N)max*(n*(1-p))/NrealT)/(T/s))), wherein N ismax、n、p、NrealRespectively representing the maximum erasing and writing times, the block number, the block failure rate, the actual accumulated erasing and writing times and the maximum use duration of the flash memory corresponding to any one power acquisition terminal; t represents the test duration, s represents the multiple of the expansion of the life value; unit n characterizes the data type of the lifetime value.
Optionally, the step of obtaining the area capacity value, the block capacity value and the actual accumulated erasing times of the flash memory life test area corresponding to any one of the power acquisition terminals includes; acquiring a zone capacity value, a block capacity value, an initial erasing and writing frequency value and the total erasing and writing frequency in the test duration of the flash memory corresponding to any one electric power acquisition terminal; and determining the actual accumulated erasing times according to the total erasing times in the test duration and the initial value of the erasing times.
Optionally, the method further comprises: and counting the erasing times, the total erasing times, the average erasing times and the minimum erasing times and the maximum erasing times of each block in each partition of the flash memory corresponding to any one power acquisition terminal.
In a second aspect, the present invention provides a flash memory life test device, which is deployed in any one of the power acquisition terminals, and the flash memory life test areas corresponding to the any one of the power acquisition terminals are different; the method comprises the following steps: a determining module and an obtaining module; the determining module is used for determining a flash memory life testing area corresponding to any one power acquisition terminal according to the environment identification parameters; the environment identification parameter and the flash memory life test area have a corresponding relation; the acquisition module is used for acquiring a zone capacity value, a block capacity value and actual accumulated erasing times of a flash memory life test zone corresponding to any one type of power acquisition terminal; and the determining module is used for determining the service life value of the flash memory corresponding to any one power acquisition terminal according to the zone capacity value, the block capacity value and the actual accumulated erasing and writing times within a test duration when the block capacity value is larger than a preset threshold value. Optionally, the determining module is specifically configured to: determining the number of the flash memory blocks corresponding to any one of the power acquisition terminals according to the zone capacity value and the block capacity value; and determining the service life value of the flash memory corresponding to any one type of the power acquisition terminal according to the test duration and the number of the blocks.
Optionally, the life value of the flash memory corresponding to any one of the power collection terminals satisfies the following relation of life value s ═ unit N (((N)max*(n*(1-p))/NrealT)/(T/s))), wherein N ismax、n、p、NrealRespectively representing the maximum erasing and writing times, the block number, the block failure rate, the actual accumulated erasing and writing times and the maximum use duration of the flash memory corresponding to any one power acquisition terminal; t represents the test duration, s represents the multiple of the expansion of the life value; unit n characterizes the data type of the lifetime value.
In a third aspect, the present invention provides a power collecting terminal, including a processor and a memory, where the memory stores machine executable instructions capable of being executed by the processor, and the processor can execute the machine executable instructions to implement the flash memory life testing method according to the first aspect.
In a fourth aspect, the present invention provides a storage medium having a computer program stored thereon, the computer program, when executed by a processor, implementing the method for testing flash memory lifetime of the first aspect.
Compared with the prior art, the technical scheme of the invention has the following technical effects:
the invention provides a flash memory life test method, a flash memory life test device, a power acquisition terminal and a storage medium, which are applied to any power acquisition terminal; the flash memory service life test areas corresponding to any one type of power acquisition terminal are different; the method comprises the following steps: determining a flash memory life test area corresponding to any one power acquisition terminal according to the environment identification parameters; the environment identification parameter and the flash memory life test area have a corresponding relation; acquiring a zone capacity value, a block capacity value and actual accumulated erasing times of a flash memory service life test zone corresponding to any one power acquisition terminal; when the capacity value of the block is larger than a preset threshold value, determining the service life value of the flash memory corresponding to any one type of power acquisition terminal according to the capacity value of the area, the capacity value of the block and the actual accumulated erasing times within a test time period; compared with the prior art, the invention distinguishes different electric power acquisition terminal products by setting identification parameters with different environments in the test program, so that the method can be applied to any electric power acquisition terminal, solves the problem that the prior art can not be compatible with all products, can obtain the service life value of the flash memory corresponding to any electric power acquisition terminal within a long time during testing by determining the zone capacity value, the block capacity value and the actual accumulated erasing times of the service life test zone after determining the flash memory service life test zone corresponding to the electric power acquisition terminal through the environment identification parameters in the process of testing, and realizes the purpose of effectively and efficiently testing the service life of various electric power acquisition terminal products.
Additional features and advantages of embodiments of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of embodiments of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and drawings.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained according to the drawings without inventive efforts.
Fig. 1 is a schematic flow chart of a method for testing the lifespan of a flash memory according to an embodiment of the present invention;
FIG. 2 is a schematic flow chart of a method for testing the lifespan of a flash memory according to an embodiment of the present invention;
FIG. 3 is a schematic flow chart of a method for testing the lifespan of a flash memory according to an embodiment of the present invention;
FIG. 4 is a functional block diagram of a flash memory life testing apparatus according to an embodiment of the present invention;
fig. 5 is a structural block diagram of an electric power collection terminal according to an embodiment of the present invention.
Icon: 40-flash life testing device; 401-a determination module; 402-an acquisition module; 50-a power acquisition terminal; 51-a memory; 52-a processor; 53-communication interface.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. The components of embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the present invention, presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures.
In the description of the present invention, it should also be noted that, unless otherwise explicitly specified or limited, the terms "disposed," "mounted," "connected," and "connected" are to be construed broadly and may, for example, be fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
At present, a flash memory (NAND FLASH) has a fixed physical life, since NDAD FLASH needs to erase a NDAD FLASH block during a read operation or a write operation, the actual service life of NDAD FLASH is affected by the number of times of erasing of the block, however, the number of times of erasing of each block is generally only thousands of times, some times even hundreds of times, or tens of times, and since the number of times of erasing is limited, if frequent erasing will affect the life of NDAD FLASH, if a user cannot know timely when the life of NDAD FLASH reaches a limit during use, some important data of the user may be lost, and therefore, new product testing, production, and field operation stages need to pay attention to the detection of NDAD FLASH life. Users are increasingly seeking to provide a way to know the age of NDAD FLASH on the device in a timely manner to avoid loss of data.
The existing test method adopts an independent test program to carry out NDAD FLASH life evaluation independently, and can not be compatible with all power acquisition terminal products, such as concentrators, special transformers, communication modules and the like, so that test codes are redundant, the maintenance amount is large, and the effective and efficient life evaluation of various products is not facilitated.
Therefore, in order to solve the above problems, an embodiment of the present invention provides a method for testing a lifetime of a flash memory, which includes: setting environment identification parameters in a flash memory test program, distinguishing different power acquisition terminal products through the environment identification parameters, implanting the flash memory test program into any power acquisition terminal operation program, executing the test program when the power acquisition terminal executes the operation program, identifying the type of the power acquisition terminal through the environment identification parameters, determining a flash memory test area corresponding to the power acquisition terminal, calculating the erasing and writing frequency interfaces of each partition of the flash memory by combining a life evaluation algorithm, and calculating the residual life, thereby realizing the effect of simply and quickly testing the life.
To facilitate understanding of the technical solution provided by the embodiment of the present invention, please refer to fig. 1, where fig. 1 is a schematic flowchart of a flash memory life testing method provided by the embodiment of the present invention, and the flash memory life testing method may be applied to any power acquisition terminal, and includes the following steps:
In the embodiment of the present invention, in order to ensure that the flash life test program is compatible with any one of the power acquisition terminal products and the platform, the embodiment of the present invention sets an environment identification parameter in the flash life test program, and distinguishes different power acquisition terminal products according to the environment identification parameter, where the power acquisition terminal products may be, but are not limited to, a mobile communication module, a concentrator, a proprietary transformer, etc., the mobile communication module may be distinguished by using the environment identification parameter of OPEN _ LINUX, other power acquisition terminal products similar to the concentrator, the proprietary transformer, etc., may be distinguished by using the environment identification parameter similar to OPEN _ LINUX, and the flash memory types corresponding to different environment identification parameters are different, so the corresponding flash life test areas are different, for example, in the test process, when the environment identification parameter is OPEN _ LINUX, the power acquisition terminal may be determined to be a mobile communication module, the flash life test area mtd4 is the raw data partition (raw data partition), and when the environment identification parameter is other, the life test area may be mtd10 data partition (data partition) or mtd11 user data partition (usr _ data partition). Therefore, before performing flash memory life test, a flash memory life test area may be determined according to a type of a power acquisition terminal product, specifically, after powering on the power acquisition terminal to run each thread, a user may execute a nandtest shell instruction, which may call a flash memory test program, and then determine a life test area corresponding to an environment identification parameter in the test program to perform life test, for convenience of understanding, a possible implementation manner is given below by taking a test product as a mobile communication module as an example:
the first step is as follows: and powering on each thread of the power acquisition terminal to normally operate, and executing a nandtest shell instruction.
The second step is that: and determining whether the environment identification parameter is OPEN _ LINUX (mobile communication module), if so, calculating mtd4 a life value of the original data partition, and if not, respectively estimating mtd10 data partition and mtd11 usr _ data partition life service conditions.
In the embodiment of the invention, in order to ensure the reliability of the test result, before the life test is performed on any one power acquisition terminal, a simulation test environment may be set up in advance, for example, in one possible implementation manner, 500 carrier simulation meters and 3 485 meters may be configured and configured according to the parameter scheme of the power acquisition terminal product, so as to ensure that the power acquisition terminal product can operate on line in a mobile network (e.g. 4G or 5G), and can ensure that the power acquisition terminal in the simulation environment performs normal meter reading, so as to accurately obtain the zone capacity value, the block capacity value and the actual accumulated erasing times of the life test zone, wherein the zone capacity value and the block capacity value may be directly obtained by reading mtd character devices, and the actual accumulated erasing times represent the difference between the total statistical erasing times accumulated in the test time and the total erasing times before the test time, it can also be understood that after obtaining the zone capacity value, the block capacity value and the actual accumulated erase/write times of the life test zone as the net erase/write times within the test time, the remaining life may be calculated by combining the life test algorithm, and in order to describe in detail the process of obtaining the zone capacity value, the block capacity value and the actual accumulated erase/write times, a possible implementation manner is given below, please refer to fig. 2, fig. 2 is a schematic flow chart of a flash life test method provided by an embodiment of the present invention, wherein step 202 may include the following sub-steps:
substep 202-1: and acquiring the zone capacity value, the block capacity value, the initial erasing frequency value and the total erasing frequency in the test duration of the flash memory corresponding to any one power acquisition terminal.
Substep 202-2: and determining the actual accumulated erasing times according to the total erasing times and the initial value of the erasing times in the test duration.
In the embodiment of the invention, in order to ensure the reliability of the test result, in the pre-configured test environment, the operation time of the power acquisition terminal system may be at least one hour or more, or one day. When calculating the lifetime, the power-on running time of the system may be obtained as the test duration, for example, in one possible implementation, the tick get ()/sysClkRateGet () instruction may be executed to obtain the running duration as the test duration, or other manners, such as a manner of presetting the running duration, may also be adopted to obtain the running duration, which is not limited herein. If the test duration is 0, the service life judgment is not needed, and if the running time is greater than 0, the service life evaluation is carried out.
It should be noted that, in order to simulate the test environment of the power acquisition terminal product and ensure the accuracy of test data and the reliability of the test result, the carrier simulation meter and the meter reading involved in configuring the simulation test environment in the embodiment of the present invention are not limited at all, and may include a carrier simulation meter and a 485 meter, or may be used in combination with meter reading applicable to other power acquisition terminal fields, and for the number of the meters in the test environment, a user may configure the test environment according to an actual test scenario, and is not limited at all here.
And 203, when the volume value of the block is larger than the preset threshold value, determining the service life of the flash memory corresponding to any one power acquisition terminal according to the volume value of the area, the volume value of the block and the actual accumulated erasing times within the test time.
In the embodiment of the present invention, since NDAD FLASH may have a block damage in the using process, when performing life evaluation, it may be determined first whether the obtained block capacity value is equal to a preset threshold (for example, 0), and if so, it indicates that there is a bad block, and at this time, the test program may be directly exited without performing life evaluation; if the block capacity value is greater than the preset threshold, the life evaluation may continue to be performed according to the life calculation rule, the number of blocks in the flash memory corresponding to any one of the power acquisition terminals may be obtained by calculation according to the obtained zone capacity value and the block capacity value, and then the life value of the flash memory corresponding to any one of the power acquisition terminals may be calculated by using the number of blocks, the test duration, and the actual accumulated erasing and writing times, so as to facilitate understanding, a possible implementation manner is given below, please refer to fig. 3, which is a schematic flowchart of a flash memory life test method provided in an embodiment of the present invention, where step 203 may include the following sub-steps:
substep 203-1: and determining the number of the flash memory blocks corresponding to any one power acquisition terminal according to the zone capacity value and the block capacity value.
Substep 203-2: and determining the service life value of the flash memory corresponding to any one power acquisition terminal according to the test duration and the number of the blocks.
In the embodiment of the present invention, the life value of any one of the power acquisition terminals corresponding to the flash memory may satisfy the following relation:
life value s ═ unit N (((N)max*(n*(1-p))/Nreal*t)/(T/s)))
Wherein N ismax、n、p、NrealAnd T respectively representing the maximum erasing and writing times, the block number, the block failure rate, the actual accumulated erasing and writing times and the maximum service time of the flash memory corresponding to any one power acquisition terminal, and T representing the test time. It can be understood that the number of blocks can be determined by using the ratio of the area capacity value to the block capacity value, the test duration can be obtained or preset according to a preset instruction, the difference between the obtained initial total number of erasures and the obtained total number of erasures in the test duration can be represented as the actual accumulated number of erasures, and the maximum number of erasures, the block capacity rate and the maximum usage duration in the relational expression can be preset according to the characteristics of the flash memory, for example, NmaxMay be 100000, the block defect rate may be 5%, one expression of T may be 365(day) 24(hour) 60(min) 60(s), and the user may perform the process according to the actual requirementIn the embodiment of the present invention, in order to ensure that the calculated data is more accurate, the lifetime value may be first expanded by s times, and at the same time, T may be reduced by s times, and the result may be finally restored, for example, if T is 365(day) 24(hour) 60(min) 60(s), in order to ensure the accuracy of the data, the user selects to expand the lifetime value by 100 times, that is, s is 100, and accordingly, T is reduced by 100 times, becomes T365 (day) 24(hour) 6(min) 6(s), and finally, the result is reduced by 100 times, so as to obtain the actual predicted lifetime value; unit n represents the data type of the calculated lifetime value, for example, the lifetime value is represented by a unit32 data type. According to the final calculation result, if the service life is normal (for example, the service life value is 10years), the corresponding power acquisition terminal product can be normally produced and operated on site, otherwise, the reason for reducing the service life needs to be checked, and the service life is prevented from being influenced by transitional erasure.
In other scenarios, the unit n may also be represented by a data type such as unit8, unit16, unit64, and the like, which is not limited herein; the flash memory of any power acquisition terminal product has a physical life, namely, a maximum erasing and writing frequency (100000), for example, a user can preset the maximum erasing and writing frequency according to parameters of the power acquisition terminal product actually tested, and the maximum erasing and writing frequency is not limited herein; for the block failure rate, the user can preset according to actual needs, and similarly, the multiple s for expanding the service life value is not limited, and the user can carry out reasonable value taking according to an actual calculation mode.
It should be further noted that the expression form of the relationship of the lifetime value provided in the embodiment of the present invention is only one expression form, and a user may actually perform corresponding processing on the relationship according to an actual computational complexity and then apply the relationship, which is not limited herein.
In order to obtain the specific use condition of any power acquisition terminal product corresponding to the flash memory, including the erasing times of each region and each block, the embodiment of the invention provides a possible implementation manner:
and counting the erasing times, the total erasing times, the average erasing times and the minimum erasing times and the maximum erasing times of each block of any power acquisition terminal in each partition of the flash memory.
In the embodiment of the invention, by counting the relevant erasing times of each block in each partition, a user can better know the use condition of the flash memory, and the serious loss of data loss caused by the use time limit of the flash memory is avoided.
In order to execute the corresponding steps in the above embodiments and various possible manners to achieve the corresponding technical effects, an implementation manner of a flash life testing apparatus is provided below, referring to fig. 4, and fig. 4 is a functional block diagram of a flash life testing apparatus provided by an embodiment of the present invention. It should be noted that the basic principle and the generated technical effects of the flash memory life testing device provided by the embodiment are the same as those of the above embodiment, and for the sake of brief description, no part of the present embodiment is mentioned, and corresponding contents in the above embodiment may be referred to. The flash memory life test apparatus 40 includes: a determining module 401 and an obtaining module 402.
The determining module 401 is configured to determine a flash memory life test area corresponding to any one of the power acquisition terminals according to the environment identification parameter; the environment identification parameter and the life flash memory test area have a corresponding relation.
An obtaining module 402, configured to obtain a zone capacity value, a block capacity value, and an actual accumulated erasing number of a flash life test zone corresponding to any one of the power acquisition terminals.
The determining module 401 is further configured to determine, when the block capacity value is greater than the preset threshold, a life value of the flash memory corresponding to any one of the power acquisition terminals according to the zone capacity value, the block capacity value, and the actual accumulated erasing times within the test time period.
It is to be understood that the determining module 401 and the obtaining module 402 may be used to cooperatively perform steps 201-203 to achieve corresponding technical effects.
Optionally, in order to implement the function of determining the life value of the flash memory corresponding to any one of the power acquisition terminals, the determining module 401 is specifically configured to: determining the number of blocks of a flash memory corresponding to any one power acquisition terminal according to the zone capacity value and the block capacity value; and determining the service life value of the flash memory corresponding to any one power acquisition terminal according to the test duration and the number of the blocks.
It is to be appreciated that the determination module 401 may be utilized to perform sub-steps 202-1-202-2 to achieve a corresponding technical effect.
Optionally, the life value of the flash memory corresponding to any one of the power acquisition terminals satisfies the following relation:
life value s ═ unit N (((N)max*(n*(1-p))/Nreal*t)/(T/s)))
Wherein N ismax、n、p、NrealThe maximum erasing times, the block number, the block failure rate, the actual accumulated erasing times and the maximum service life of the flash memory corresponding to any one power acquisition terminal are respectively represented by T; t represents the test duration, and s represents the multiple of the expansion of the life value; unit n represents the data type of the life value.
Optionally, in order to achieve the functions of obtaining the area capacity value, the block capacity value and the actual accumulated erasing times of the life test area, the obtaining module 402 is further configured to obtain the area capacity value, the block capacity value, the initial value of the erasing times and the total erasing times within the test duration of the flash memory corresponding to any one of the power acquisition terminals; the determining module 401 is further configured to determine the actual accumulated erase count according to the total erase count and the initial erase count value in the test duration.
It is to be understood that the determining module 401 and the obtaining module 402 may be configured to perform sub-steps 203-1-203-2 to achieve corresponding technical effects.
Optionally, in order to enable a user to know the use condition of the flash memory corresponding to any one of the power acquisition terminals, the flash memory life test device 40 may further include a statistics module, where the statistics module is configured to count the number of times of erasing, total number of times of erasing, average number of times of erasing, and the minimum number of times of erasing and the maximum number of times of erasing of each block in each partition of the flash memory corresponding to any one of the power acquisition terminals.
It should be further noted that the modules may be stored in a memory in the form of software or Firmware (Firmware) or be fixed in a processor of any kind of power acquisition terminal, and the processor may execute any kind of flash life testing method provided by the embodiment of the present invention.
An embodiment of the present invention further provides an electric power collection terminal, which includes a processor and a memory, referring to fig. 5, and fig. 5 is a structural block diagram of the electric power collection terminal provided in the embodiment of the present invention, where the electric power collection terminal 50 includes a memory 51, a processor 52, and a communication interface 53. The memory 51, processor 52 and communication interface 53 are electrically connected to each other, directly or indirectly, to enable transmission or interaction of data. For example, the components may be electrically connected to each other via one or more communication buses or signal lines.
The memory 51 may be used to store software programs and modules, such as program instructions/modules corresponding to the road data generating method provided by the embodiment of the present invention, and the processor 52 executes various functional applications and data processing by executing the software programs and modules stored in the memory 51. The communication interface 53 may be used for communicating signaling or data with other node devices. The power collecting terminal 50 may have a plurality of communication interfaces 53 in the present invention.
The Memory 51 may be, but is not limited to, a Random Access Memory (RAM), a Read Only Memory (ROM), a Programmable Read-Only Memory (PROM), an Erasable Read-Only Memory (EPROM), an electrically Erasable Read-Only Memory (EEPROM), and the like.
Embodiments of the present invention also provide a storage medium on which a computer program is stored, for example, when the storage medium can be stored in the processor 52 shown in fig. 5, the computer program is executed by the processor 52 to implement the flash memory life testing method according to any of the foregoing embodiments, and the computer readable storage medium can be, but is not limited to, various media capable of storing program codes, such as a usb disk, a removable hard disk, a ROM, a RAM, a PROM, an EPROM, an EEPROM, a magnetic disk, or an optical disk.
In summary, the method, the apparatus, the power acquisition terminal and the storage medium for testing the flash memory life provided by the embodiments of the present invention are applied to any power acquisition terminal, and the method includes: determining a flash memory life test area corresponding to any one power acquisition terminal according to the environment identification parameters; the environment identification parameter and the life flash memory test area have a corresponding relation; acquiring a zone capacity value, a block capacity value and actual accumulated erasing times of a flash memory service life test zone corresponding to any one power acquisition terminal; when the block capacity value is larger than a preset threshold value, determining the service life value of the flash memory corresponding to any one power acquisition terminal according to the zone capacity value, the block capacity value and the actual accumulated erasing times within the test time period; compared with the prior art, the invention distinguishes different electric power acquisition terminal products by setting identification parameters with different environments in the test program, so that the method can be applied to any electric power acquisition terminal, solves the problem that the prior art can not be compatible with all products, can obtain the service life value of the flash memory corresponding to any electric power acquisition terminal within a long time during testing by determining the zone capacity value, the block capacity value and the actual accumulated erasing times of the service life test zone after determining the flash memory service life test zone corresponding to the electric power acquisition terminal through the environment identification parameters in the testing process, and realizes the purpose of effectively and efficiently testing the service life of various electric power acquisition terminal products.
It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
The above is only a preferred embodiment of the present invention, and is not intended to limit the present invention, and various modifications and changes will occur to those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention. It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures.
Claims (10)
1. A flash memory life test method is characterized in that the method is applied to any power acquisition terminal; the flash memory service life test areas corresponding to any one type of power acquisition terminal are different; the method comprises the following steps:
determining a flash memory life test area corresponding to any one power acquisition terminal according to the environment identification parameters; the environment identification parameter and the flash memory life test area have a corresponding relation;
acquiring a zone capacity value, a block capacity value and actual accumulated erasing times of a flash memory service life test zone corresponding to any one power acquisition terminal;
and when the block capacity value is larger than a preset threshold value, determining the service life of the flash memory corresponding to any one type of power acquisition terminal according to the zone capacity value, the block capacity value and the actual accumulated erasing times within a test time period.
2. The method for testing the life of a flash memory according to claim 1, wherein the step of determining the life value of the flash memory corresponding to any one of the power collecting terminals according to the zone capacity value, the block capacity value and the actual accumulated erasing times during the testing period comprises:
determining the number of the flash memory blocks corresponding to any one of the power acquisition terminals according to the zone capacity value and the block capacity value;
and determining the service life value of the flash memory corresponding to any one type of the power acquisition terminal according to the test duration and the number of the blocks.
3. The method for testing the life of the flash memory according to claim 2, wherein the life value of the flash memory corresponding to any one of the power acquisition terminals satisfies the following relation:
life value s ═ unit N (((N)max*(n*(1-p))/Nreal*t)/(T/s)))
Wherein N ismax、n、p、NrealRespectively representing the maximum erasing and writing times, the block number, the block failure rate, the actual accumulated erasing and writing times and the maximum use duration of the flash memory corresponding to any one power acquisition terminal; t represents the test duration, s represents the multiple of the expansion of the life value; unit n characterizes the data type of the lifetime value.
4. The method for testing the flash life according to claim 1, wherein the step of obtaining the zone capacity value, the block capacity value and the actual accumulated erasing times of the flash life test zone corresponding to any one of the power acquisition terminals comprises;
acquiring a zone capacity value, a block capacity value, an initial erasing and writing frequency value and the total erasing and writing frequency in the test duration of the flash memory corresponding to any one electric power acquisition terminal;
and determining the actual accumulated erasing times according to the total erasing times in the test duration and the initial value of the erasing times.
5. The method of claim 1, further comprising: and counting the erasing times, the total erasing times, the average erasing times and the minimum erasing times and the maximum erasing times of each block in each partition of the flash memory corresponding to any one power acquisition terminal.
6. A flash memory life testing device is characterized in that flash memory life testing areas corresponding to any one type of power acquisition terminal are different when the flash memory life testing devices are deployed in any one type of power acquisition terminal; the method comprises the following steps: a determining module and an obtaining module;
the determining module is used for determining a flash memory life testing area corresponding to any one power acquisition terminal according to the environment identification parameters; the environment identification parameter and the flash memory life test area have a corresponding relation;
the acquisition module is used for acquiring a zone capacity value, a block capacity value and actual accumulated erasing times of a flash memory life test zone corresponding to any one type of power acquisition terminal;
and the determining module is used for determining the service life value of the flash memory corresponding to any one power acquisition terminal according to the zone capacity value, the block capacity value and the actual accumulated erasing and writing times within a test duration when the block capacity value is larger than a preset threshold value.
7. The flash memory life test apparatus of claim 6, wherein the determining module is specifically configured to:
determining the number of the flash memory blocks corresponding to any one of the power acquisition terminals according to the zone capacity value and the block capacity value; and determining the service life value of the flash memory corresponding to any one type of the power acquisition terminal according to the test duration and the number of the blocks.
8. The flash memory life test device according to claim 7, wherein the life value of the flash memory corresponding to any one of the power acquisition terminals satisfies the following relation:
life value s ═ unit N (((N)max*(n*(1-p))/Nreal*t)/(T/s)))
Wherein N ismax、n、p、NrealRespectively representing the maximum erasing and writing times, the block number, the block failure rate, the actual accumulated erasing and writing times and the maximum use duration of the flash memory corresponding to any one power acquisition terminal; t represents the test duration, s represents the multiple of the expansion of the life value; unit n characterizes the data type of the lifetime value.
9. A power harvesting terminal comprising a processor and a memory, the memory storing machine executable instructions executable by the processor to implement the flash memory life testing method of any one of claims 1 to 5.
10. A storage medium having stored thereon a computer program, characterized in that the computer program, when being executed by a processor, implements the flash memory lifetime testing method according to any of claims 1-5.
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