CN111309174B - Embedded touch screen, touch detection method thereof and display device - Google Patents
Embedded touch screen, touch detection method thereof and display device Download PDFInfo
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- CN111309174B CN111309174B CN202010053795.8A CN202010053795A CN111309174B CN 111309174 B CN111309174 B CN 111309174B CN 202010053795 A CN202010053795 A CN 202010053795A CN 111309174 B CN111309174 B CN 111309174B
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/0412—Digitisers structurally integrated in a display
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/13306—Circuit arrangements or driving methods for the control of single liquid crystal cells
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/13338—Input devices, e.g. touch panels
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/042—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by opto-electronic means
- G06F3/0421—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by opto-electronic means by interrupting or reflecting a light beam, e.g. optical touch-screen
Abstract
The invention discloses an embedded touch screen, a touch detection method and a display device thereof, wherein a switch transistor is configured to be in a cut-off state in a finger touch mode, an initial state in a laser touch mode is a subthreshold state, and the state is changed from the subthreshold state to a conduction state under laser irradiation due to the existence of a filter, so that signal changes on self-capacitance electrodes which are coupled with the switch transistors in a one-to-one correspondence mode in the two touch modes of finger touch and laser touch are different, and further the two touch modes of finger touch detection and laser touch detection can be realized. Therefore, the invention provides a novel touch product compatible with finger touch and laser touch.
Description
Technical Field
The invention relates to the technical field of display, in particular to an embedded touch screen, a touch detection method thereof and a display device.
Background
The embedded touch control (Full in cell touch) display technology combines display and touch control into a whole, so that the product is lighter and thinner and has lower cost. Currently, most embedded touch display products use a self-capacitance architecture, that is, a display (AA) area includes a plurality of self-capacitance electrodes, a driving chip outputs square wave signals in a touch time (V-blanking) section, charges the self-capacitance electrodes, and simultaneously detects signal changes of the self-capacitance electrodes, and finally locates coordinates of touch through operation. However, as mentioned above, the related in-cell touch display product is a more uniform self-contained system architecture, and new touch products are needed to be derived.
Disclosure of Invention
In view of the above, the embodiments of the present invention provide an in-cell touch screen, a touch detection method thereof, and a display device, which are used for providing a novel touch product compatible with laser touch and finger touch.
Therefore, the in-cell touch screen provided by the embodiment of the invention comprises: the array substrate and the opposite substrate are oppositely arranged, a plurality of switch transistors and a plurality of self-capacitance electrodes which are coupled with the switch transistors in a one-to-one correspondence manner are arranged on one side of the array substrate facing the opposite substrate, and a black matrix and a filter lens embedded in the black matrix are arranged on one side of the opposite substrate facing the array substrate;
a part of channel regions of the switching transistors are overlapped with the filters, and the rest of channel regions are overlapped with the black matrix;
the switching transistor is configured to be in an off state in a finger touch mode, and an initial state in a laser touch mode is a subthreshold state;
the filter is configured to selectively transmit laser light emitted by the laser pen, so that the switching transistor is converted from a subthreshold state to a conduction state under laser irradiation.
In a possible implementation manner, in the in-cell touch screen provided by the embodiment of the invention, the black matrix has a mesh structure formed by a plurality of grids, and the filter is in contact with the boundary of the grids.
In one possible implementation manner, in the in-cell touch screen provided by the embodiment of the present invention, each self-capacitance electrode is multiplexed as a common electrode.
In a possible implementation manner, in the in-cell touch screen provided by the embodiment of the present invention, the method further includes: a touch control detection chip;
the touch detection chip is configured to judge a touch position according to the signal change on the self-capacitance electrode in the finger touch mode or the laser touch mode.
Based on the same inventive concept, the embodiment of the invention also provides a touch detection method of the embedded touch screen, which comprises the following steps:
receiving an instruction for switching to a finger touch mode or a laser touch mode in a touch time period;
in the finger touch mode, the switching transistor is controlled to be in a cut-off state, and driving signals are loaded on the capacitor electrodes respectively so as to judge the finger touch position according to the first signal change on the capacitor electrodes respectively;
and under the laser touch mode, controlling the initial state of the switching transistor to be a subthreshold state, enabling the switching transistor to be in a conducting state when being irradiated by laser emitted by a laser pen, loading the driving signals on the self-capacitance electrodes, and judging the laser touch position according to the second signal change on the self-capacitance electrodes.
In a possible implementation manner, in the touch detection method provided by the embodiment of the present invention, the control switch transistor is in an off state, and specifically includes:
and loading a first modulation signal to the grid electrode of the switching transistor, wherein the high level of the first modulation signal is smaller than 0V, and the low level of the first modulation signal is the turn-off voltage of the switching transistor.
In a possible implementation manner, in the touch detection method provided by the embodiment of the present invention, the controlling the switching transistor to be in a subthreshold state specifically includes:
and loading a second modulation signal to the grid electrode of the switching transistor, wherein the high level of the second modulation signal is smaller than 0V, and the low level of the second modulation signal is larger than the low level of the first modulation signal.
In a possible implementation manner, in the touch detection method provided by the embodiment of the present invention, before determining the finger touch position or the laser touch position according to the signal change on the respective capacitive electrodes, the method further includes:
amplifying the signal variation on each self-capacitance electrode.
In a possible implementation manner, in the touch detection method provided by the embodiment of the present invention, the receiving an instruction to switch to a finger touch mode or a laser touch mode specifically includes:
when a signal for opening the laser pen is received, opening a laser touch mode; and when receiving the signal for closing the laser pen, starting a finger touch mode.
Based on the same inventive concept, an embodiment of the present invention further provides a display apparatus, including: the embedded touch screen.
The invention has the following beneficial effects:
the embodiment of the invention provides an embedded touch screen, a touch detection method and a display device thereof, which comprise the following steps: the array substrate and the opposite substrate are oppositely arranged, a plurality of switch transistors and a plurality of self-capacitance electrodes which are coupled with the switch transistors in a one-to-one correspondence manner are arranged on one side of the array substrate facing the opposite substrate, and a black matrix and a filter lens embedded in the black matrix are arranged on one side of the opposite substrate facing the array substrate; part of channel regions of the switching transistors are mutually overlapped with the filters, and the rest of channel regions are mutually overlapped with the black matrix; a switching transistor configured to be in an off state in a finger touch mode, and an initial state in a laser touch mode is a subthreshold state; and the filter is configured to selectively transmit laser emitted by the laser pen, so that the switching transistor is converted from a subthreshold state to a conduction state under the irradiation of the laser. The switch transistor is configured to be in a cut-off state in a finger touch mode, an initial state in a laser touch mode is a subthreshold state, and the state is changed from the subthreshold state to a conduction state under laser irradiation due to the existence of the filter, so that signal changes on self-capacitance electrodes which are coupled with the switch transistors in a one-to-one correspondence manner in the finger touch mode and the laser touch mode are different, and further two touch modes of finger touch detection and laser touch detection can be realized. Therefore, the invention provides a novel touch product compatible with finger touch and laser touch.
Drawings
Fig. 1 is a schematic structural diagram of an in-cell touch screen according to an embodiment of the present invention;
fig. 2 is a flowchart of a touch detection method of an in-cell touch screen according to an embodiment of the present invention;
FIG. 3 is a timing diagram illustrating operation of an in-cell touch screen according to the related art;
FIG. 4 is a timing chart of the operation of the in-cell touch screen according to the embodiment of the present invention;
fig. 5 is a schematic diagram of a working principle of the in-cell touch screen in a finger touch mode according to the embodiment of the present invention;
fig. 6 is a schematic diagram of an operating principle of the in-cell touch screen in a laser touch mode according to an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention more clear, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present invention. The thickness and shape of the various layers in the drawings are not to scale, and are intended to be illustrative of the present disclosure. It will be apparent that the described embodiments are some, but not all, embodiments of the invention. All other embodiments, which can be made by a person skilled in the art without creative efforts, based on the described embodiments of the present invention fall within the protection scope of the present invention.
Unless defined otherwise, technical or scientific terms used herein should be given the ordinary meaning as understood by one of ordinary skill in the art to which this invention belongs. The terms first, second and the like in the description and in the claims, are not used for any order, quantity or importance, but are used for distinguishing between different elements. The word "comprising" or "comprises", and the like, means that elements or items preceding the word are included in the element or item listed after the word and equivalents thereof, but does not exclude other elements or items. "inner", "outer", "upper", "lower", etc. are used merely to denote relative positional relationships, which may also change accordingly when the absolute position of the object to be described changes.
An in-cell touch screen provided by an embodiment of the present invention, as shown in fig. 1, includes: an array substrate 001 and an opposite substrate 002 which are arranged oppositely, wherein a plurality of switch transistors 101 and a plurality of self-capacitance electrodes 102 which are coupled with the switch transistors 101 in a one-to-one correspondence are arranged on one side of the array substrate 001 facing the opposite substrate 002, and a black matrix 201 and a filter 202 embedded in the black matrix 201 are arranged on one side of the opposite substrate 002 facing the array substrate 001;
specifically, each switching transistor 101 includes a gate electrode 1011, a source electrode 1012, a drain electrode 1013, and an active layer 1014, and the active layer 1014 includes a first contact region in contact with the source electrode 1012, a second contact region in contact with the drain electrode 1013, and a channel region between the first contact region and the second contact region;
a part of the channel region of each switching transistor 101 overlaps with the filter 202, and the rest overlaps with the black matrix 201;
a switching transistor 101 configured to be in an off state in a finger touch mode, and an initial state in a laser touch mode is a subthreshold state;
the filter 202 is configured to selectively transmit laser light emitted from the laser pen, so that the switching transistor 101 is changed from a subthreshold state to an on state under laser irradiation.
In the in-cell touch screen provided by the embodiment of the invention, since the switch transistor 101 is configured to be in an off state in the finger touch mode, and the initial state in the laser touch mode is a subthreshold state, and the filter is changed from the subthreshold state to an on state under laser irradiation, the signal change on the self-capacitance electrode 102 coupled with each switch transistor 101 in one-to-one correspondence in the finger touch mode and the laser touch mode is different, and thus the two touch modes of finger touch detection and laser touch detection can be realized. Therefore, the invention provides a novel touch product compatible with finger touch and laser touch.
The filter 202 being embedded in the black matrix 201 means that a part of the black matrix 201 in the related art is changed to the filter 202 to ensure the aperture ratio of the product. In addition, the filter 202 needs to be selected to match the wavelength of the laser emitted by the laser pen, that is, only the laser emitted by the laser pen has poor transmittance to visible light, so that the leakage current of the switching transistor 101 is not abnormally increased under the irradiation of the common external visible light. Among them, the common laser pen has red light, green light, blue-violet light and so on as alternatives. In the invention, only one laser pen with a fixed wavelength range is selected, and a filter 202 matched with the laser pen is selected.
In addition, the size relationship and the relative positional relationship between the channel region portion of each switching transistor 101 overlapping the filter 202 and the remaining portion of the channel region overlapping the black matrix 201 may be specifically set according to the actually required touch effect and the shading effect of the black matrix 201 on the channel region.
Alternatively, in the in-cell touch screen provided in the embodiment of the present invention, the black matrix 201 has a mesh structure formed by a plurality of grids, and the filter 202 is in contact with the boundary of the grids. In general, the black matrix 201 in the related design generally completely covers the channel region to ensure good coverage of the channel region and prevent the channel region from being affected by external light. In the present invention, the production is facilitated by bringing the filter 202 into contact with the grid boundary of the black matrix 201, that is, by disposing the filter 202 in the edge region of the black matrix 201.
Optionally, in the in-cell touch screen provided in the embodiment of the present invention, to achieve the light and thin design of the product, the capacitor electrodes 102 are multiplexed as the common electrode.
Optionally, in the providing of the in-cell touch screen according to the embodiment of the present invention, the method may generally further include: a touch control detection chip;
the touch detection chip is configured to judge the touch position according to the signal change on the self-capacitance electrode in a finger touch mode or a laser touch mode. In addition, in the present invention, since the self-capacitance electrode 102 is multiplexed with the common electrode, the touch detection chip is generally used to apply a common voltage signal (V com ) So as to drive the liquid crystal to deflect and realize the display function.
In addition, as shown in fig. 1, in the in-cell touch screen provided by the embodiment of the present invention, the method may generally further include: the substrate 103, the gate insulating layer 101 between the gate electrode 1011 and the active layer 1014, the pixel electrode 105 electrically connected to the transistor 101, and the insulating layer 106 between the pixel electrode 105 and the self-capacitance electrode 102. The function and fabrication of these layers are the same as those of the related art, and will not be described in detail herein.
Based on the same inventive concept, the embodiment of the present invention further provides a touch detection method for the above-mentioned in-cell touch screen, and because the touch detection method is the same as the principle of solving the problem of the above-mentioned in-cell touch screen provided by the embodiment of the present invention, implementation of the touch detection method can refer to implementation of the above-mentioned in-cell touch screen, and repeated parts are not repeated.
Specifically, the touch detection method of the in-cell touch screen provided by the embodiment of the invention, as shown in fig. 2, includes the following steps:
s1, receiving an instruction of switching to a finger touch mode or a laser touch mode in a touch time period;
s2, in a finger touch mode, controlling the switching transistor to be in a cut-off state, and loading driving signals to the capacitor electrodes so as to judge the finger touch position according to the first signal change on the capacitor electrodes;
and S3, controlling the initial state of the switching transistor to be a subthreshold state in a laser touch mode, enabling the switching transistor to be in a conducting state when being irradiated by laser emitted by a laser pen, loading driving signals on the capacitor electrodes, and judging laser touch positions according to second signal changes on the capacitor electrodes.
In the related design, in order to reduce the mutual coupling of different wires, the touch detection chip outputs square wave signals in a touch time period, and simultaneously outputs square waves, namely a frame Start (STV) signal, a signal on a Gate line (Gate) and a signal on a data line (Source), which are called as modulation signals. Specifically, as shown in fig. 3, the Gate signal will square wave on the basis of the off Voltage (VGL) of the switching transistor 101, so as to ensure that the Gate is always at a lower potential in the touch time period, and prevent the generation of the leakage current (loff) of the transistor 101. In the present invention, as shown in fig. 4, the STV signal and Gate signal are adjusted to be square waves based on VGL ', VGL' > VGL, but the highest value of the square waves is not more than 0V, so that the transistor 101 can still operate in the subthreshold rear region under the condition of no laser, i.e. the leakage current can still be in a slightly smaller state, but when laser irradiates the channel region through the filter 202, the carriers in the channel region are increased, ioff is increased, and the TFT is weakly turned on. Finally, the transistor 101 is in weak conduction when being subjected to specific illumination through adjusting the voltage of the modulation signal, so that the touch detection chip receives the signal change of the self-capacitance electrode 102, and the identification of the touch action of the laser pen is realized.
Based on this, in the above touch detection method provided by the embodiment of the present invention, the switch transistor is controlled to be in the off state, which can be specifically implemented by the following steps:
the grid electrode of the switching transistor is loaded with a first modulation signal, the high level of the first modulation signal is smaller than 0V, and the low level of the first modulation signal is the turn-off voltage VGL of the switching transistor.
Optionally, in the above touch detection method provided by the embodiment of the present invention, the switch transistor is controlled to be in a subthreshold state, which may be specifically implemented by the following steps:
the grid electrode of the switching transistor is loaded with a second modulation signal, the high level of the second modulation signal is smaller than 0V, and the low level of the second modulation signal is larger than the low level of the first modulation signal. Specifically, the low level of the second modulation signal is VGL' described above.
Optionally, in the above touch detection method provided by the embodiment of the present invention, before the performing step of determining the finger touch position or the laser touch position according to the signal change on the respective capacitor electrode, the following steps may be further performed:
the signal variations on the respective capacitive electrodes are amplified.
By amplifying the signal change in the two touch modes according to the signal change conditions on the respective capacitance electrodes, a good touch effect can be obtained in both touch modes. And the amplification factor is generally adjusted and set according to the touch effect and the matching of the whole machine. Specifically, the specific test software is used to test the signal quantity when the touch is generated according to the actual touch effect (i.e. signal quantity) in two modes before the product leaves the factory, and compare the signal quantity with the threshold value, if the signal quantity is too small and is close to the threshold value, the false touch can be generated, and if the signal quantity is too large, the amplifier can work to be close to the saturation region, and the no touch can be generated. It is therefore necessary to verify experimentally that a suitable signal quantity is obtained, i.e. corresponding to a suitable amplification factor. In the actual use process, the amplification factors in the two touch modes are corresponding fixed values.
Optionally, in the above touch detection method provided by the embodiment of the present invention, receiving an instruction to switch to a finger touch mode or a laser touch mode may be specifically implemented by:
when a signal for opening the laser pen is received, opening a laser touch mode; and when receiving a signal for closing the laser pen, starting a finger touch mode.
In order to better understand the technical scheme of the touch detection method provided by the invention, the following detailed description will be given.
And in the touch time period, when a signal for closing the laser pen is received, starting a finger touch mode. As shown in fig. 3 and 5, the Gate voltage approaches VGL, so that the transistor (TFT) 101 is turned off, the square wave of the modulation signal on the Source line cannot be loaded, and the pixel capacitor C p The charge on the capacitor remains substantially unchanged. At this time, an Analog Front End (AFE) circuit of a touch detection chip (TDDI IC) provides touch control between the self-capacitance electrode 102 and ground via a multiplexer (Mux)Touch) capacitance C b Outputting a high level of the first modulation signal (the high level is less than 0V) to the touch capacitor C b Charging; AFE circuit of touch detection chip gives touch capacitance C through Mux circuit b When outputting the low level of the first modulation signal (VGL) b Internal capacitance C of touch detection chip f Discharging, the touch control detecting chip passes through the internal capacitor C f And detecting and amplifying the change of the charge quantity caused by the finger touch to judge the finger touch position.
And in the touch time period, when a signal for opening the laser pen is received, starting a laser touch mode. As shown in fig. 4 and 6, the Gate voltage approaches VGL', so that the TFT operates in the sub-threshold back region, and when laser light is irradiated to the channel region through the filter 202, the channel region has increased carriers, ioff increases, and the TFT is weakly turned on. Modulated signal on Source trace versus pixel capacitance C p Charging, pixel capacitance C p To change the state of the common electrode multiplexed as the self-capacitance electrode 102, and the touch capacitance C b Is a charge amount of (a). The AFE circuit of the touch detection chip supplies the touch capacitance C formed by the self-capacitance electrode 102 and the ground to the Mux circuit b Outputting a high level of the second modulation signal (the high level is less than 0V) to the touch capacitor C b Charging; the analog front end AFE circuit of the touch detection chip supplies the touch capacitor C to the touch detection chip through the Mux circuit b When outputting the low level (VGL') of the second modulation signal, the touch capacitor C b Internal capacitance C of touch detection chip f Discharging, the touch control detecting chip passes through the internal capacitor C f And detecting and amplifying the change of the charge quantity brought by the laser touch to judge the laser touch position.
Based on the same inventive concept, the embodiment of the invention also provides a display device, including the above embedded touch screen provided by the embodiment of the invention, where the display device may be: any product or component with display function such as a mobile phone, a tablet computer, a television, a display, a notebook computer, a digital photo frame, a navigator, a smart watch, a body-building wristband, a personal digital assistant, and the like. Because the principle of solving the problem of the display device is the same as that of the embedded touch screen, the implementation of the display device can be referred to the embodiment of the embedded touch screen, and the repeated parts are not repeated.
The embedded touch screen, the touch detection method and the display device provided by the embodiment of the invention comprise the following steps: the array substrate and the opposite substrate are oppositely arranged, a plurality of switch transistors and a plurality of self-capacitance electrodes which are coupled with the switch transistors in a one-to-one correspondence manner are arranged on one side of the array substrate facing the opposite substrate, and a black matrix and a filter lens embedded in the black matrix are arranged on one side of the opposite substrate facing the array substrate; part of channel regions of the switching transistors are mutually overlapped with the filters, and the rest of channel regions are mutually overlapped with the black matrix; a switching transistor configured to be in an off state in a finger touch mode, and an initial state in a laser touch mode is a subthreshold state; and the filter is configured to selectively transmit laser emitted by the laser pen, so that the switching transistor is converted from a subthreshold state to a conduction state under the irradiation of the laser. The switch transistor is configured to be in a cut-off state in a finger touch mode, an initial state in a laser touch mode is a subthreshold state, and the state is changed from the subthreshold state to a conduction state under laser irradiation due to the existence of the filter, so that signal changes on self-capacitance electrodes which are coupled with the switch transistors in a one-to-one correspondence manner in the finger touch mode and the laser touch mode are different, and further two touch modes of finger touch detection and laser touch detection can be realized. Therefore, the invention provides a novel touch product compatible with finger touch and laser touch.
It will be apparent to those skilled in the art that various modifications and variations can be made to the present invention without departing from the spirit or scope of the invention. Thus, it is intended that the present invention also include such modifications and alterations insofar as they come within the scope of the appended claims or the equivalents thereof.
Claims (10)
1. An in-cell touch screen, comprising: the array substrate and the opposite substrate are oppositely arranged, a plurality of switch transistors and a plurality of self-capacitance electrodes which are coupled with the switch transistors in a one-to-one correspondence manner are arranged on one side of the array substrate facing the opposite substrate, and a black matrix and a filter lens embedded in the black matrix are arranged on one side of the opposite substrate facing the array substrate;
a part of channel regions of the switching transistors are overlapped with the filters, and the rest of channel regions are overlapped with the black matrix;
the switching transistor is configured to be in an off state in a finger touch mode, and an initial state in a laser touch mode is a subthreshold state;
the filter is configured to selectively transmit laser light emitted by the laser pen, so that the switching transistor is converted from a subthreshold state to a conduction state under laser irradiation.
2. The in-cell touch screen according to claim 1, wherein the black matrix has a mesh structure composed of a plurality of meshes, and the filter is in contact with boundaries of the meshes.
3. The in-cell touch screen of claim 1, wherein each of the self-capacitance electrodes is multiplexed as a common electrode.
4. The in-cell touch screen of any of claims 1-3, further comprising: a touch control detection chip;
the touch detection chip is configured to judge a touch position according to the signal change on the self-capacitance electrode in the finger touch mode or the laser touch mode.
5. The touch detection method of an in-cell touch screen according to any one of claims 1 to 4, comprising:
receiving an instruction for switching to a finger touch mode or a laser touch mode in a touch time period;
in the finger touch mode, the switching transistor is controlled to be in a cut-off state, and driving signals are loaded on the capacitor electrodes respectively so as to judge the finger touch position according to the first signal change on the capacitor electrodes respectively;
and under the laser touch mode, controlling the initial state of the switching transistor to be a subthreshold state, enabling the switching transistor to be in a conducting state when being irradiated by laser emitted by a laser pen, loading the driving signals on the self-capacitance electrodes, and judging the laser touch position according to the second signal change on the self-capacitance electrodes.
6. The touch detection method of claim 5, wherein the control switch transistor is in an off state, specifically comprising:
and loading a first modulation signal to the grid electrode of the switching transistor, wherein the high level of the first modulation signal is smaller than 0V, and the low level of the first modulation signal is the turn-off voltage of the switching transistor.
7. The touch detection method of claim 6, wherein the controlling the switching transistor in the subthreshold state specifically comprises:
and loading a second modulation signal to the grid electrode of the switching transistor, wherein the high level of the second modulation signal is smaller than 0V, and the low level of the second modulation signal is larger than the low level of the first modulation signal.
8. The touch detection method according to any one of claims 5 to 7, further comprising, before determining the finger touch position or the laser touch position according to the signal change on the respective capacitive electrode:
amplifying the signal variation on each self-capacitance electrode.
9. The touch detection method according to any one of claims 5 to 7, wherein the receiving the instruction to switch to the finger touch mode or the laser touch mode specifically includes:
when a signal for opening the laser pen is received, opening a laser touch mode; and when receiving the signal for closing the laser pen, starting a finger touch mode.
10. A display device, comprising: the in-cell touch screen of any of claims 1-4.
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| CN112255830B (en) * | 2020-10-23 | 2021-11-02 | 深圳市华星光电半导体显示技术有限公司 | Laser induction panel, manufacturing method thereof and display device |
| CN112764572A (en) * | 2021-01-07 | 2021-05-07 | 深圳市华星光电半导体显示技术有限公司 | Display device and display device control driving method |
| CN112947787A (en) * | 2021-02-23 | 2021-06-11 | 北京京东方显示技术有限公司 | Touch panel, display device, display system and touch method |
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