CN111308583A - CVD diamond Brewster window structure and preparation method thereof - Google Patents
CVD diamond Brewster window structure and preparation method thereof Download PDFInfo
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- CN111308583A CN111308583A CN202010256768.0A CN202010256768A CN111308583A CN 111308583 A CN111308583 A CN 111308583A CN 202010256768 A CN202010256768 A CN 202010256768A CN 111308583 A CN111308583 A CN 111308583A
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- cvd diamond
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/02—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of crystals, e.g. rock-salt, semi-conductors
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/04—Diamond
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
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Abstract
The invention relates to the technical field of optical devices and discloses a CVD diamond Brewster window structure which comprises a CVD diamond, wherein the CVD diamond is a cylindrical single crystal CVD diamond with the diameter of 12.7mm and the height of not less than 15mm, and the bottom surface of the CVD diamond is a (100) crystal face. The CVD diamond is cut with a first Brewster window plane and a second Brewster window plane, both the first Brewster window plane and the second Brewster window plane are complete ellipses, the first Brewster window plane is formed by cutting the CVD diamond along a plane forming an angle of 65 degrees with the bottom surface, and the second Brewster window plane is formed by cutting the first Brewster window plane in a translation mode of 2.0mm along the axis of a cylinder, and the CVD diamond Brewster window preparation method comprises the following steps: s1: CVD diamond crystals were prepared. The CVD diamond Brewster window structure can bear larger laser power density.
Description
Technical Field
The invention relates to the technical field of optical devices, in particular to a CVD diamond Brewster window structure and a preparation method thereof.
Background
Diamond is commonly known as "diamond". That is, the original body of diamond, which is a mineral composed of carbon elements, is an allotrope of carbon elements. Diamond is the hardest substance naturally occurring in nature. Diamond is used in a wide variety of applications, for example: artware, cutting tools in industry. Graphite can be formed into synthetic diamonds at high temperature and high pressure. Is also a precious gem.
However, the brewster window is formed by processing diamond, and at present, the traditional brewster window structure cannot tolerate over-high laser power density.
Disclosure of Invention
Technical problem to be solved
Aiming at the defects of the prior art, the invention provides the CVD diamond Brewster window structure and the preparation method thereof, which have the advantages of being capable of bearing higher laser power density and the like, and solve the problem that the traditional Brewster window structure cannot bear the over-high laser power density.
(II) technical scheme
In order to achieve the purpose of bearing larger laser power density, the invention provides the following technical scheme: a CVD diamond brewster window structure comprising a CVD diamond, characterized in that: the CVD diamond is a cylindrical single crystal CVD diamond with the diameter of 12.7mm and the height of not less than 15mm, and the bottom surface of the CVD diamond is a (100) crystal face. The CVD diamond is cut with a first Brewster window plane and a second Brewster window plane, the first Brewster window plane and the second Brewster window plane are both complete ellipses, the first Brewster window plane is formed by cutting the CVD diamond along a plane forming an angle of 65 degrees with the bottom surface, and the second Brewster window plane is formed by cutting the first Brewster window plane along the axis of a cylinder in a translation mode of 2.0 mm.
A CVD diamond Brewster window preparation method comprises the following steps:
s1: preparing CVD diamond crystals: the CVD diamond crystal is prepared by adopting a large-area hot wire direct current plasma preparation method;
s2: cutting the CVD diamond crystal: and cutting the CVD diamond crystal in the step S1, and cutting and forming a first plane of the Brewster window and a second plane of the Brewster window.
S3: polishing the CVD diamond crystal: grinding the plane processed in the step S2, and performing surface polishing and processing on each cut diamond single crystal;
s4: cleaning: and cleaning the CVD diamond crystal in the step S3.
Preferably, the specific process in the step S4 is to treat the diamond single crystal wafer with aqua regia (concentrated hydrochloric acid: nitric acid: 3:1) at 55-65 ℃ for 10-115 minutes, and then ultrasonically clean the diamond single crystal wafer with acetone at normal temperature for 10-15 minutes.
Preferably, the first brewster window plane and the second brewster window plane are both ground by a grinder.
Preferably, the diamond single crystal wafer is treated with aqua regia for 10 minutes to 115 minutes.
Preferably, the surface roughness of the first plane of the brewster window and the surface roughness of the second plane of the brewster window are both Ra ═ 50nm or less.
Preferably, the CVD diamond crystals are polished to cylindrical single crystal CVD diamond in step S3.
(III) advantageous effects
Compared with the prior art, the invention provides a CVD diamond Brewster window structure and a preparation method thereof, and the CVD diamond Brewster window structure has the following beneficial effects:
1. according to the CVD diamond Brewster window structure and the preparation method thereof, the first plane of the Brewster window and the second plane of the Brewster window are cut on the CVD diamond, so that the CVD diamond can bear high laser power density, and the reliability of the structure can be well guaranteed in the preparation process.
Drawings
Fig. 1 is a schematic diagram of a CVD diamond brewster window structure according to the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1, a CVD diamond brewster window structure includes a CVD diamond, characterized in that: the CVD diamond is a cylindrical single crystal CVD diamond with the diameter of 12.7mm and the height of not less than 15mm, and the bottom surface of the CVD diamond is a (100) crystal surface. The CVD diamond is cut with a first Brewster window plane and a second Brewster window plane, both the first Brewster window plane and the second Brewster window plane are complete ellipses, the first Brewster window plane is formed by cutting the CVD diamond along a plane forming an angle of 65 degrees with the bottom surface, the second Brewster window plane is formed by cutting the first Brewster window plane in a translation mode by 2.0mm along the axis of a cylinder, and the CVD diamond is enabled to bear high laser power density by cutting the first Brewster window plane and the second Brewster window plane.
A CVD diamond Brewster window preparation method comprises the following steps:
s1: preparing CVD diamond crystals: preparing the CVD diamond crystal by adopting a large-area hot wire direct current plasma preparation method;
s2: cutting the CVD diamond crystal: and cutting the CVD diamond crystal in the step S1, and cutting and forming the first plane of the Brewster window and the second plane of the Brewster window.
S3: polishing the CVD diamond crystal: grinding the plane processed in the step S2, and polishing and processing the surface of each cut diamond single crystal;
s4: cleaning: the CVD diamond crystal in the step S3 is cleaned, and the reliability of the CVD diamond crystal structure can be well ensured in the whole preparation process.
The specific process in the step S4 is to treat the diamond single crystal wafer with aqua regia (concentrated hydrochloric acid: nitric acid: 3:1) at 55-65 ℃ for 10-15 minutes, and then ultrasonically clean the diamond single crystal wafer with acetone at normal temperature for 10-15 minutes, so that the cleaning effect is good.
The first plane of the Brewster window and the second plane of the Brewster window are both ground by a grinding machine, and the roughness of the first plane of the Brewster window and the roughness of the second plane of the Brewster window are improved.
The diamond single crystal wafer is treated with aqua regia for 10 minutes to 15 minutes.
The surface roughness of the first plane of the brewster window and the surface roughness of the second plane of the brewster window are both Ra ═ 50nm or less, so that the requirements can be met.
In the step S3, the CVD diamond crystal is polished into a cylindrical single crystal CVD diamond, so that the manufacture of a Brewster window structure of the CVD diamond is facilitated.
In summary, according to the CVD diamond brewster window structure and the preparation method thereof, the first brewster window plane and the second brewster window plane are cut on the CVD diamond, so that the CVD diamond can bear high laser power density, and the reliability of the structure can be well guaranteed in the preparation process.
It is to be noted that the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (7)
1. A CVD diamond brewster window structure comprising a CVD diamond, characterized in that: the CVD diamond is a cylindrical single crystal CVD diamond with the diameter of 12.7mm and the height of not less than 15mm, and the bottom surface of the CVD diamond is a (100) crystal face. The CVD diamond is cut with a first Brewster window plane and a second Brewster window plane, the first Brewster window plane and the second Brewster window plane are both complete ellipses, the first Brewster window plane is formed by cutting the CVD diamond along a plane forming an angle of 65 degrees with the bottom surface, and the second Brewster window plane is formed by cutting the first Brewster window plane along the axis of a cylinder in a translation mode of 2.0 mm.
2. A CVD diamond Brewster window preparation method comprises the following steps:
s1: preparing CVD diamond crystals: the CVD diamond crystal is prepared by adopting a large-area hot wire direct current plasma preparation method;
s2: cutting the CVD diamond crystal: and cutting the CVD diamond crystal in the step S1, and cutting and forming a first plane of the Brewster window and a second plane of the Brewster window.
S3: polishing the CVD diamond crystal: grinding the plane processed in the step S2, and performing surface polishing and processing on each cut diamond single crystal;
s4: cleaning: and cleaning the CVD diamond crystal in the step S3.
3. A CVD diamond brewster window preparation method according to claim 2, wherein: the specific process in the step S4 is to treat the diamond single crystal wafer with aqua regia (concentrated hydrochloric acid: nitric acid: 3:1) at 55-65 ℃, and then ultrasonically clean the diamond single crystal wafer with acetone at normal temperature for 10-15 minutes.
4. A CVD diamond brewster window structure according to claim 1, wherein: the first brewster window plane and the second brewster window plane are both ground by a grinder.
5. A CVD diamond brewster window preparation method according to claim 3, wherein: the diamond single crystal wafer is treated with aqua regia for 10 minutes to 15 minutes.
6. A CVD diamond Brewster window structure according to claim 4, wherein: the surface roughness of the first plane of the Brewster window and the surface roughness of the second plane of the Brewster window are both Ra being less than 50 nm.
7. A CVD diamond brewster window preparation method according to claim 2, wherein: in the step S3, the CVD diamond crystal is polished into a cylindrical single crystal CVD diamond.
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN115106869A (en) * | 2022-06-24 | 2022-09-27 | 合肥先端晶体科技有限责任公司 | Device and method for preparing sheet diamond |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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CN101397655A (en) * | 2007-09-30 | 2009-04-01 | 漳州师范学院 | Chemical vapor deposition equipment for material preparation |
CN102522680A (en) * | 2011-12-23 | 2012-06-27 | 中国科学院光电研究院 | Method for designing Brewster window |
CN102770588A (en) * | 2010-01-18 | 2012-11-07 | 六号元素有限公司 | CVD single crystal diamond material |
CN106154396A (en) * | 2016-07-05 | 2016-11-23 | 北京大学 | A kind of ultra broadband Terahertz Brewster vacuum window and preparation method thereof |
CN109161964A (en) * | 2018-09-30 | 2019-01-08 | 济南中乌新材料有限公司 | A kind of preparation method of large scale cvd diamond crystal |
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- 2020-04-02 CN CN202010256768.0A patent/CN111308583A/en active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101397655A (en) * | 2007-09-30 | 2009-04-01 | 漳州师范学院 | Chemical vapor deposition equipment for material preparation |
CN102770588A (en) * | 2010-01-18 | 2012-11-07 | 六号元素有限公司 | CVD single crystal diamond material |
CN102522680A (en) * | 2011-12-23 | 2012-06-27 | 中国科学院光电研究院 | Method for designing Brewster window |
CN106154396A (en) * | 2016-07-05 | 2016-11-23 | 北京大学 | A kind of ultra broadband Terahertz Brewster vacuum window and preparation method thereof |
CN109161964A (en) * | 2018-09-30 | 2019-01-08 | 济南中乌新材料有限公司 | A kind of preparation method of large scale cvd diamond crystal |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN115106869A (en) * | 2022-06-24 | 2022-09-27 | 合肥先端晶体科技有限责任公司 | Device and method for preparing sheet diamond |
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Application publication date: 20200619 |