CN111293185A - Photoelectric conversion device and terminal device - Google Patents
Photoelectric conversion device and terminal device Download PDFInfo
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- CN111293185A CN111293185A CN201811484069.0A CN201811484069A CN111293185A CN 111293185 A CN111293185 A CN 111293185A CN 201811484069 A CN201811484069 A CN 201811484069A CN 111293185 A CN111293185 A CN 111293185A
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/053—Energy storage means directly associated or integrated with the PV cell, e.g. a capacitor integrated with a PV cell
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- G06F1/26—Power supply means, e.g. regulation thereof
- G06F1/266—Arrangements to supply power to external peripherals either directly from the computer or under computer control, e.g. supply of power through the communication port, computer controlled power-strips
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
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Abstract
The present disclosure relates to a photoelectric conversion device and a terminal device, wherein the photoelectric conversion device includes: photoelectric conversion module, connection module and energy storage module, wherein: the photoelectric conversion module comprises a photoelectric conversion layer coated on a shell of the terminal equipment, the photoelectric conversion module is electrically connected with the connection module, and the photoelectric conversion layer is used for converting absorbed light energy into electric energy; the energy storage module is electrically connected with the connecting module and is used for storing the electric energy transmitted by the photoelectric conversion module and providing the stored electric energy for the terminal equipment. The photoelectric conversion device can convert light energy into electric energy, so that the non-charging interface design of the terminal equipment is realized, the phenomenon that a user needs to insert a USB wire into a USB energy storage interface or a charging interface of the intelligent equipment in the related technology to charge the terminal equipment is avoided, the operation of the user for charging the terminal equipment is simplified, and the user experience is improved.
Description
Technical Field
The present disclosure relates to the field of optoelectronics, and in particular, to a photoelectric conversion device and a terminal device.
Background
In the field of intelligent equipment, especially for intelligent equipment powered by an electricity storage module, along with the fact that people have higher and higher requirements on standby time of the intelligent equipment, how to enable the electricity storage module to supply power to the intelligent equipment for a long time or continuously is concerned by more and more people.
In the related art, the smart device usually supplies power through the electric energy pre-stored in the electricity storage module, and is specific, the smart device includes the electricity storage module therein, the electricity storage module of the smart device has a Universal Serial Bus (USB) energy storage interface or a charging interface, when the smart device needs to be charged, the USB energy storage interface or the charging interface of the smart device needs to be inserted through a USB connector or a charging connector, and the other end of the USB cable or the charging cable is directly connected to the power supply to store energy, so as to achieve the purpose of charging the smart device.
Disclosure of Invention
In order to solve the problems in the related art, the present disclosure provides a photoelectric conversion apparatus and a terminal device, which can convert light energy into electric energy, thereby implementing a non-charging interface design of the terminal device, and avoiding a phenomenon that a user needs to insert a USB cable into a USB energy storage interface or a charging interface of an intelligent device in the related art to charge the terminal device, thereby simplifying the operation of the user for charging the terminal device, and improving the user experience.
According to a first aspect of embodiments of the present disclosure, there is provided a photoelectric conversion apparatus including: photoelectric conversion module, connection module and energy storage module, wherein:
the photoelectric conversion module comprises a photoelectric conversion layer coated on a shell of the terminal equipment, the photoelectric conversion module is electrically connected with the connection module, and the photoelectric conversion layer is used for converting absorbed light energy into electric energy;
the energy storage module is electrically connected with the connecting module and is used for storing the electric energy transmitted by the photoelectric conversion module and providing the stored electric energy for the terminal equipment.
Optionally, the photoelectric conversion module further includes a first electrode and a second electrode, the first electrode is disposed on the housing, and the photoelectric conversion layer is disposed between the first electrode and the second electrode.
Optionally, the photoelectric conversion layer includes a PN junction.
Optionally, the PN junction includes a P-type semiconductor layer and an N-type semiconductor layer.
Optionally, the photoelectric conversion module further includes an optical thin film layer, the optical thin film layer is disposed between the second electrode and the N-type semiconductor layer of the photoelectric conversion layer, and the optical thin film layer is configured to absorb light energy.
Optionally, the thickness of the PN junction is 1 μm to 50 μm.
Optionally, the PN junction is a homojunction of a silicon-based P-type doped amorphous or microcrystalline P-type semiconductor and an N-type semiconductor, or a heterojunction formed by a silicon-based P-type doped amorphous or microcrystalline semiconductor and a silicon carbide N-type doped amorphous or microcrystalline semiconductor, or a heterojunction formed by a silicon-based N-type doped amorphous or microcrystalline semiconductor and a silicon carbide P-type doped amorphous or microcrystalline semiconductor.
Optionally, the optical film layer includes an anti-reflection film layer and/or a light-condensing film layer.
Optionally, the first electrode and the second electrode are one of a silver electrode, an aluminum electrode, or a silver-aluminum electrode.
According to a second aspect of the embodiments of the present disclosure, there is provided a terminal device including a housing and the photoelectric conversion apparatus according to the first aspect of the embodiments of the present disclosure.
The technical scheme provided by the embodiment of the disclosure can have the following beneficial effects:
the present disclosure provides a photoelectric conversion device including: photoelectric conversion module, connection module and energy storage module, wherein: the photoelectric conversion module comprises a photoelectric conversion layer coated on the shell of the terminal equipment, and is electrically connected with the connection module, and the photoelectric conversion layer is used for converting absorbed light energy into electric energy; and the energy storage module is electrically connected with the connecting module and is used for storing the electric energy transmitted by the photoelectric conversion module and providing the stored electric energy for the terminal equipment. The photoelectric conversion device can convert light energy into electric energy, so that the non-charging interface design of the terminal equipment is realized, and the phenomenon that a user needs to insert a USB wire into a USB energy storage interface or a charging interface of the intelligent equipment to charge the terminal equipment in the related technology is avoided, so that the operation of the user for charging the terminal equipment is simplified, and the user experience is improved.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the invention and together with the description, serve to explain the principles of the invention.
Fig. 1 is a block diagram illustrating a photoelectric conversion apparatus according to an exemplary embodiment.
Fig. 2 is a block diagram of the photoelectric conversion module of fig. 1.
Fig. 3 is a block diagram illustrating an apparatus for photoelectric conversion according to an example embodiment.
Description of reference numerals:
11: a photoelectric conversion module;
12: a connection module;
13: an energy storage module;
111: a photoelectric conversion layer;
111 a: a P-type semiconductor layer;
111 b: an N-type semiconductor layer;
112: a first electrode;
113: a second electrode;
114: an optical thin film layer;
a: the direction of the current flow.
300: photoelectric conversion device
302: a processing component;
304: a memory;
306: a power component;
308: a multimedia component;
310: an audio component;
312: an input/output (I/O) interface;
314: a sensor assembly;
316: a communication component;
320: a processor;
Detailed Description
Reference will now be made in detail to the exemplary embodiments, examples of which are illustrated in the accompanying drawings. When the following description refers to the accompanying drawings, like numbers in different drawings represent the same or similar elements unless otherwise indicated. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with the present invention. Rather, they are merely examples of apparatus and methods consistent with certain aspects of the invention, as detailed in the appended claims.
Fig. 1 is a block diagram illustrating a photoelectric conversion apparatus according to an exemplary embodiment, and referring to fig. 1, the photoelectric conversion apparatus includes: the energy storage module 13 comprises a photoelectric conversion module 11, a connection module 12 and an energy storage module 13, wherein the photoelectric conversion module 11 comprises a photoelectric conversion layer 111 coated on a shell of the terminal device, the photoelectric conversion module 11 is electrically connected with the connection module 12, and the photoelectric conversion layer 111 (shown in fig. 2) is used for converting absorbed light energy into electric energy; the energy storage module 13 is electrically connected to the connection module 12, and the energy storage module 13 is configured to store the electric energy transmitted by the photoelectric conversion module 11 and provide the stored electric energy for the terminal device.
In this embodiment, the photoelectric conversion module 11 is mainly used to convert absorbed light energy into electric energy, and the photoelectric conversion module 11 may be a solar cell panel, wherein the power and output voltage of the solar cell panel may be reasonably selected based on the needs of the actual application scene, and in addition, a combination mode of a plurality of solar cell panels may be adopted to output stable electric energy, so that the photoelectric conversion module 11 is easily adapted to the use of the terminal device, and certainly, the photoelectric conversion module 11 may also be other photoelectric conversion devices. In addition, the photoelectric conversion module 11 may be provided integrally with the housing of the terminal device, or may be provided as an external element separate from the housing of the terminal device, in which the external element is provided on the housing.
In addition, the photoelectric conversion module 11 includes a photoelectric conversion layer 111 coated on a housing of the terminal device, and mainly serves to convert light energy absorbed by the photoelectric conversion module 11 into electric energy.
The photoelectric conversion module 11 is electrically connected to the connection module 12, and the connection module 12 is mainly used for connecting the photoelectric conversion module 11 and the energy storage module 13, and specifically, according to the electric energy converted by the photoelectric conversion layer 111 in the photoelectric conversion module 11, the electric energy is transmitted to the energy storage module 13 through the connection module 12 so as to be used by the terminal device.
In addition, the energy storage module 13 is electrically connected to the connection module 12, and the energy storage module 13 is configured to store the electric energy converted by the photoelectric conversion module 11 and release the stored electric energy to supply power to the terminal device. Specifically, the energy storage module 13 may be a storage battery pack, or may be other energy storage devices, where the storage battery pack may include a plurality of (at least 2) storage battery cells, and multiple series-parallel combination modes may be adopted among the storage battery cells according to needs of an actual application scenario. Energy storage module 13 is connected with the terminal equipment electricity, under the condition that has illumination, photoelectric conversion module 11 can convert light energy into electric energy, energy storage module 13 can continuously provide the electric energy for the terminal equipment, the phenomenon that the user need insert the USB line into the USB energy storage interface or the interface that charges of smart machine in the correlation technique to charge to the terminal equipment has been avoided, thereby the operation that the user charges to the terminal equipment has been simplified, realize that the user charges for the terminal equipment anytime and anywhere, user's experience has been improved.
The photoelectric conversion device provided by the embodiment of the present disclosure includes: the photoelectric conversion module comprises a photoelectric conversion layer coated on a shell of the terminal equipment, and is electrically connected with the connection module and used for converting absorbed light energy into electric energy; the energy storage module is electrically connected with the connecting module and is used for storing the electric energy transmitted by the photoelectric conversion module and providing the stored electric energy for the terminal equipment. The photoelectric conversion layer in the photoelectric conversion module absorbs light energy and forms a potential difference inside the photoelectric conversion layer to form a current loop, so that the purpose of converting the light energy into electric energy is achieved, the converted light energy is stored in the storage module through the connection module, the storage module provides the stored electric energy for the terminal device to use, the phenomenon that a user needs to insert a USB wire into a USB energy storage interface or a charging interface of the intelligent device to charge the terminal device in the related technology is avoided, the operation of the user for charging the terminal device is simplified, and the user experience is improved.
Further, fig. 2 is a schematic structural diagram of a photoelectric conversion module, and as shown in fig. 2, the photoelectric conversion module includes: a first electrode 112 and a second electrode 113, the first electrode 112 being disposed on the housing, the photoelectric conversion layer 111 being disposed between the first electrode 112 and the second electrode 113.
Specifically, the second electrode is an electrode on the light incident surface of the photoelectric conversion module 11, that is, a front electrode, the first electrode 112 is a backlight surface of the photoelectric conversion module 11 and is disposed on a housing of the terminal device, that is, a back electrode, the first electrode 112 and the second electrode 113 are components in the photoelectric conversion device, and the first electrode 112 and the second electrode 113 may be a single electrode or a plurality of electrodes arranged in parallel, a length of each of the first electrode 112 and the second electrode 113 may be one third to one half of a body of the photoelectric conversion module 11, a width of each of the first electrode 112 and the second electrode 113 may be one thirty-third to one twentieth of the body of the photoelectric conversion module 11, meanwhile, the first electrode 112 and the second electrode 113 may be one of a silver electrode, an aluminum electrode, or a silver-aluminum electrode, and the first electrode 112 and the second electrode 113 may be disposed as a silver electrode, a back electrode, or a silver-aluminum electrode, One of the aluminum electrode or the silver-aluminum electrode, that is, the first electrode 112 and the second electrode 113 may be configured as the same electrode, or may be configured as different electrodes, wherein the silver electrode is mainly made of silver, the larger the area of the silver electrode is, the more silver is used, and the longer the length of the silver electrode is, which makes the area of the silver electrode larger, and the more silver is consumed, so that the cost is higher, but the photoelectric conversion efficiency of the silver electrode is higher, the material of the aluminum electrode is mainly aluminum, the cost of aluminum is lower, but the photoelectric conversion efficiency is lower, and in the actual application process, the type of the electrode may be selected according to the requirement.
In addition, the first electrode 112 and the second electrode 113 are mainly used as two terminals for inputting or outputting current in a conductive medium (solid, gas, vacuum, or electrolyte solution) to form a current loop, in this embodiment, the conductive medium is a photoelectric conversion layer 111 in the photoelectric conversion module 11, the photoelectric conversion layer 111 is disposed between the first electrode 112 and the second electrode 113, and the photoelectric conversion layer 111 is mainly used for converting absorbed light energy into electric energy for use by a terminal device.
Optionally, the photoelectric conversion layer 111 may be a PN junction, the PN junction may include a P-type semiconductor layer 111a and an N-type semiconductor layer 111b, and the PN junction may also include a contact surface where the P-type semiconductor layer and the N-type semiconductor layer are connected.
Wherein, the P-type semiconductor layer 111a is doped with impurities mainly as a P-type semiconductor, the N-type semiconductor layer 111b is doped with impurities mainly as an N-type semiconductor, and the dopant may further include (more than 1 of Cd, Zn and Mg), specifically, the PN junction may be a homojunction of a silicon-based doped amorphous or microcrystalline P-type semiconductor and an N-type semiconductor, or a heterojunction composed of a silicon-based P-type doped amorphous or microcrystalline semiconductor and a silicon carbide N-type doped amorphous or microcrystalline semiconductor, or a heterojunction composed of a silicon-based N-type doped amorphous or microcrystalline semiconductor and a silicon carbide P-type doped amorphous or microcrystalline semiconductor, wherein the P-type microcrystalline silicon material in the silicon-based P-type doped amorphous or microcrystalline semiconductor has a good crystallization rate, which is beneficial to improving the electrical conductivity of the material, and has a smaller absorption coefficient, on the one hand, the photon absorption of the amorphous intrinsic layer is increased, on the other hand, the first electrode 112 is in good contact with the PN junction, and in the implementation process, the type of the PN junction can be selected according to the requirement, and the selection of the PN junction is not limited by the present disclosure.
Alternatively, when the photoelectric conversion device is provided on a terminal device, the thickness of the photoelectric conversion layer 111 in the photoelectric conversion module 11, i.e., the PN junction, is set to be in the range of 1 μm to 50 μm in consideration of the thickness of the terminal device body, and specifically, the thickness of the P-type semiconductor layer 111a and the thickness of the N-type semiconductor layer 111b in the PN junction may be determined as required.
Optionally, the photoelectric conversion module 11 further includes an optical thin film layer 114, the optical thin film layer 114 is disposed between the second electrode 113 and the N-type semiconductor layer 111b of the photoelectric conversion layer 111, and the optical thin film layer 114 is mainly used for absorbing light irradiated on the photoelectric conversion module 11 or the terminal device, wherein the light may be an available light source such as a natural light source and an artificial light source.
In order to increase the light absorption rate, the optical film layer 114 may include an anti-reflection film layer and/or a light-gathering film layer, wherein the anti-reflection film layer is mainly used for reducing the light reflection when irradiated by light, increasing the light transmission amount of the photoelectric conversion module 11, and thereby increasing the light absorption rate, the thickness of the anti-reflection film layer may be reasonably designed according to practical requirements, and in general, when the response wavelength range is 0.4 μm to 5 μm, the central wavelength is 2.7 μm, and if the refractive index of the material is 1.5, the maximum anti-reflection effect is calculated within the response wavelength range of 0.4 μm to 5 μm, and the thickness of the anti-reflection film layer should be 450 nm.
The light-gathering film can be prepared into a surface with uneven convex and concave geometric shapes by means of photoetching, transfer printing, machining, etching, pouring and the like, under the condition of illumination, the area of illumination can be increased by the aid of the surface with uneven convex and concave geometric shapes of the light-gathering film, and further the light absorption rate is improved.
Specifically, when light is irradiated to the terminal device, the optical thin film layer 114 disposed between the second electrode 113 of the photoelectric conversion module 11 and the N-type semiconductor layer 111b absorbs light energy, and in order to increase the light absorption rate, the antireflection film and/or the light-collecting film may be selected, and when the absorbed light acts on the photoelectric conversion layer 111, holes — electron pairs are generated at the PN junction of the photoelectric conversion layer 111, carriers generated in the vicinity of the PN junction in the semiconductor reach the space charge region without being recombined, and due to the strong built-in electric field in the PN junction barrier region, electrons flow into the N-type semiconductor layer region and holes flow into the P-type semiconductor layer region, and as a result, the N-type semiconductor layer region stores excess electrons, and the P-type semiconductor layer region has excess holes, which form a photogenerated electric field in the opposite direction to the barrier in the vicinity of the PN junction, the photovoltaic electric field partially cancels the action of the barrier electric field, and also enables the P-type semiconductor layer zone to be positively charged and the N-type semiconductor layer zone to be negatively charged, so that the photovoltaic electromotive force is generated in the thin layer between the N-type semiconductor layer zone and the P-type semiconductor layer zone, and if the PN junction is always in an open circuit state and is irradiated by light, the charges are accumulated in the PN junction barrier zone, and the PN junction shows the capacitance characteristic. The reduction of the potential barrier destroys the original balance between the diffusion motion and the drift motion of the carriers in the PN junction. When the moving current density of the carriers and the diffusion current density of the majority carriers are equal, a stable potential difference Voc is established between two sides of the PN junction, and at the moment, the generation rate of the carriers is equal to the recombination rate of the hole-electron pairs. If the illumination is not stopped, carriers are continuously generated, hole-electron pairs are continuously recombined, and a current loop is formed by electrodes arranged on the upper and lower surfaces of the photoelectric conversion layer 111, as shown in fig. 2, an arrow a represents the direction of current, thereby completing the conversion between light energy and electric energy.
The photoelectric conversion module provided by the embodiment of the present disclosure includes: the photoelectric conversion layer is arranged between the first electrode and the second electrode, wherein the first electrode and the second electrode are one of silver electrodes, aluminum electrodes or silver-aluminum electrodes, the photoelectric conversion layer comprises a PN junction, the PN junction comprises a P-type semiconductor layer and an N-type semiconductor layer, the PN junction can be a homojunction or a heterojunction, and the thickness of the PN junction is 1-50 mu m. Further, the photoelectric conversion module further includes an optical thin film layer disposed between the second electrode and the N-type semiconductor layer of the photoelectric conversion layer, the optical thin film layer being mainly used to absorb light energy, and the optical thin film layer may be provided as an anti-reflection film layer and/or a light-condensing film layer in order to increase light absorption rate. Specifically, under the condition of illumination, the optical thin film layer in the photoelectric conversion module absorbs light energy and transmits the absorbed light energy to the PN junction in the photoelectric conversion module, a hole-electron pair is generated inside the PN junction, the distribution state of charges in the P-type semiconductor layer and the N-type semiconductor layer in the PN junction is changed, a potential difference is formed inside the PN junction, a current loop is formed through the first electrode and the second electrode which are arranged on the upper surface and the lower surface of the photoelectric conversion layer 111, the conversion between the light energy and the electric energy is further completed, the photoelectric conversion module can be lightened and thinned through the arrangement of the thickness of the PN junction, and the purpose of lightening and thinning the terminal equipment is further achieved. And because the photoelectric conversion module is arranged on the terminal pressing device, the optical energy can be converted into the electric energy, the converted electric energy is stored in the energy storage module through the connecting module, and a user does not need to insert a USB energy storage interface or a charging interface of the intelligent device through a USB wire for charging, so that the photoelectric conversion module can charge the terminal device at any time and any place under the condition of illumination, and the user experience is improved.
Fig. 3 is a block diagram illustrating an apparatus 300 for photoelectric conversion according to an example embodiment. For example, the apparatus 300 may be a mobile phone, a computer, a digital broadcast terminal, a messaging device, a game console, a tablet device, a medical device, an exercise device, a personal digital assistant, and the like.
Referring to fig. 3, the apparatus 300 may include one or more of the following components: a processing component 302, a memory 304, a power component 306, a multimedia component 308, an audio component 310, an input/output (I/O) interface 312, a sensor component 314, a communication component 316, and a processor 320.
The processing component 302 generally controls overall operation of the device 300, such as operations associated with display, telephone calls, data communications, camera operations, and recording operations. The processing components 302 may include one or more processors 320 to execute instructions to perform all or a portion of the steps of the methods described above. Further, the processing component 302 can include one or more modules that facilitate interaction between the processing component 302 and other components. For example, the processing component 302 may include a multimedia module to facilitate interaction between the multimedia component 308 and the processing component 302.
The memory 304 is configured to store various types of data to support operations at the device 300. Examples of such data include instructions for any application or method operating on device 300, contact data, phonebook data, messages, pictures, videos, and so forth. The memory 304 may be implemented by any type or combination of volatile or non-volatile memory devices, such as Static Random Access Memory (SRAM), electrically erasable programmable read-only memory (EEPROM), erasable programmable read-only memory (EPROM), programmable read-only memory (PROM), read-only memory (ROM), magnetic memory, flash memory, magnetic or optical disks.
The multimedia component 308 includes a screen that provides an output interface between the device 300 and a user. In some embodiments, the screen may include a Liquid Crystal Display (LCD) and a Touch Panel (TP). If the screen includes a touch panel, the screen may be implemented as a touch screen to receive an input signal from a user. The touch panel includes one or more touch sensors to sense touch, slide, and gestures on the touch panel. The touch sensor may not only sense the boundary of a touch or slide action, but also detect the duration and pressure associated with the touch or slide operation. In some embodiments, the multimedia component 308 includes a front facing camera and/or a rear facing camera. The front camera and/or the rear camera may receive external multimedia data when the device 300 is in an operating mode, such as a shooting mode or a video mode. Each front camera and rear camera may be a fixed optical lens system or have a focal length and optical zoom capability.
The audio component 310 is configured to output and/or input audio signals. For example, audio component 310 includes a Microphone (MIC) configured to receive external audio signals when apparatus 300 is in an operating mode, such as a call mode, a recording mode, and a voice recognition mode. The received audio signals may further be stored in the memory 304 or transmitted via the communication component 316. In some embodiments, audio component 310 also includes a speaker for outputting audio signals.
The I/O interface 312 provides an interface between the processing component 302 and peripheral interface modules, which may be keyboards, click wheels, buttons, etc. These buttons may include, but are not limited to: a home button, a volume button, a start button, and a lock button.
The sensor assembly 314 includes one or more sensors for providing various aspects of status assessment for the device 300. For example, sensor assembly 314 may detect an open/closed state of device 300, the relative positioning of components, such as a display and keypad of apparatus 300, the change in position of apparatus 300 or a component of apparatus 300, the presence or absence of user contact with apparatus 300, the orientation or acceleration/deceleration of apparatus 300, and the change in temperature of apparatus 300. Sensor assembly 314 may include a proximity sensor configured to detect the presence of a nearby object without any physical contact. The sensor assembly 314 may also include a light sensor, such as a CMOS or CCD image sensor, for use in imaging applications. In some embodiments, the sensor assembly 314 may also include an acceleration sensor, a gyroscope sensor, a magnetic sensor, a pressure sensor, or a temperature sensor.
The communication component 316 is configured to facilitate wired or wireless communication between the apparatus 300 and other devices. The device 300 may access a wireless network based on a communication standard, such as WiFi, 2G or 3G, or a combination thereof. In an exemplary embodiment, the communication component 316 receives a broadcast signal or broadcast related information from an external broadcast management system via a broadcast channel. In an exemplary embodiment, the communication component 316 further includes a Near Field Communication (NFC) module to facilitate short-range communications. For example, the NFC module may be implemented based on Radio Frequency Identification (RFID) technology, infrared data association (IrDA) technology, Ultra Wideband (UWB) technology, Bluetooth (BT) technology, and other technologies.
In an example embodiment, the apparatus 300 may be implemented by one or more Application Specific Integrated Circuits (ASICs), Digital Signal Processors (DSPs), Digital Signal Processing Devices (DSPDs), Programmable Logic Devices (PLDs), Field Programmable Gate Arrays (FPGAs), controllers, micro-controllers, microprocessors, or other electronic components.
Wherein the device 300 comprises a housing and a photoelectric conversion device, wherein the photoelectric conversion device comprises: photoelectric conversion module, connection module and energy storage module, wherein:
the photoelectric conversion module comprises a photoelectric conversion layer coated on a shell of the terminal equipment, the photoelectric conversion module is electrically connected with the connection module, and the photoelectric conversion layer is used for converting absorbed light energy into electric energy;
the energy storage module is electrically connected with the connecting module and is used for storing the electric energy transmitted by the photoelectric conversion module and providing the stored electric energy for the terminal equipment.
Wherein the photoelectric conversion module further comprises a first electrode and a second electrode, the first electrode is disposed on the housing, and the photoelectric conversion layer is disposed between the first electrode and the second electrode.
Wherein the photoelectric conversion layer includes a PN junction.
The PN junction comprises a P-type semiconductor layer and an N-type semiconductor layer.
The photoelectric conversion module further comprises an optical thin film layer, wherein the optical thin film layer is arranged between the second electrode and the N-type semiconductor layer of the photoelectric conversion layer, and the optical thin film layer is used for absorbing light energy.
Wherein the thickness of the PN junction is 1-50 μm.
The PN junction is a homojunction of a silicon-based doped amorphous or microcrystalline P-type semiconductor and an N-type semiconductor, or a heterojunction formed by the silicon-based P-type doped amorphous or microcrystalline semiconductor and a silicon carbide N-type doped amorphous or microcrystalline semiconductor, or a heterojunction formed by the silicon-based N-type doped amorphous or microcrystalline semiconductor and the silicon carbide P-type doped amorphous or microcrystalline semiconductor.
Wherein the optical thin film layer comprises an anti-reflection film layer and/or a light-gathering film layer.
Wherein the first electrode and the second electrode are one of a silver electrode, an aluminum electrode, or a silver-aluminum electrode.
Other embodiments of the invention will be apparent to those skilled in the art from consideration of the specification and practice of the invention disclosed herein. This application is intended to cover any variations, uses, or adaptations of the invention following, in general, the principles of the invention and including such departures from the present disclosure as come within known or customary practice within the art to which the invention pertains. It is intended that the specification and examples be considered as exemplary only, with a true scope and spirit of the invention being indicated by the following claims.
It will be understood that the invention is not limited to the precise arrangements described above and shown in the drawings and that various modifications and changes may be made without departing from the scope thereof. The scope of the invention is limited only by the appended claims.
Claims (10)
1. A photoelectric conversion device, comprising: photoelectric conversion module, connection module and energy storage module, wherein:
the photoelectric conversion module comprises a photoelectric conversion layer coated on a shell of the terminal equipment, the photoelectric conversion module is electrically connected with the connection module, and the photoelectric conversion layer is used for converting absorbed light energy into electric energy;
the energy storage module is electrically connected with the connecting module and is used for storing the electric energy transmitted by the photoelectric conversion module and providing the stored electric energy for the terminal equipment.
2. The photoelectric conversion apparatus according to claim 1, wherein the photoelectric conversion module further comprises a first electrode and a second electrode, the first electrode being provided on the housing, the photoelectric conversion layer being provided between the first electrode and the second electrode.
3. The photoelectric conversion apparatus according to claim 2, wherein the photoelectric conversion layer comprises a PN junction.
4. The photoelectric conversion apparatus according to claim 3, wherein the PN junction comprises a P-type semiconductor layer and an N-type semiconductor layer.
5. The photoelectric conversion apparatus according to claim 3, wherein the photoelectric conversion module further comprises an optical thin film layer provided between the second electrode and the N-type semiconductor layer of the photoelectric conversion layer, the optical thin film layer being configured to absorb light energy.
6. The photoelectric conversion apparatus according to claim 3, wherein the thickness of the PN junction is 1 μm to 50 μm.
7. The photoelectric conversion device according to any one of claims 3 to 6, wherein the PN junction is a homojunction of a silicon-based P-type doped amorphous or microcrystalline semiconductor and an N-type semiconductor, or a heterojunction composed of a silicon-based P-type doped amorphous or microcrystalline semiconductor and a silicon carbide N-type doped amorphous or microcrystalline semiconductor, or a heterojunction composed of a silicon-based N-type doped amorphous or microcrystalline semiconductor and a silicon carbide P-type doped amorphous or microcrystalline semiconductor.
8. The photoelectric conversion device according to claim 5, wherein the optical thin film layer comprises an antireflection film layer and/or a light-condensing film layer.
9. The photoelectric conversion device according to claim 2, wherein the first electrode and the second electrode are one of a silver electrode, an aluminum electrode, or a silver-aluminum electrode.
10. A terminal device characterized by comprising a housing and the photoelectric conversion apparatus according to any one of claims 1 to 9.
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| CN201811484069.0A CN111293185A (en) | 2018-12-06 | 2018-12-06 | Photoelectric conversion device and terminal device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201811484069.0A CN111293185A (en) | 2018-12-06 | 2018-12-06 | Photoelectric conversion device and terminal device |
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Application publication date: 20200616 |