CN111293154A - Display panel and display device - Google Patents

Display panel and display device Download PDF

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Publication number
CN111293154A
CN111293154A CN202010108369.XA CN202010108369A CN111293154A CN 111293154 A CN111293154 A CN 111293154A CN 202010108369 A CN202010108369 A CN 202010108369A CN 111293154 A CN111293154 A CN 111293154A
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CN
China
Prior art keywords
layer
display panel
photoelectric converter
oled device
disposed
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Pending
Application number
CN202010108369.XA
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Chinese (zh)
Inventor
郭庆勋
王硕晟
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Application filed by Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd filed Critical Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
Priority to CN202010108369.XA priority Critical patent/CN111293154A/en
Publication of CN111293154A publication Critical patent/CN111293154A/en
Pending legal-status Critical Current

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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/60OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/122Pixel-defining structures or layers, e.g. banks

Abstract

The embodiment of the invention discloses a display panel and a display device, wherein the display panel comprises a substrate; an anode layer disposed on the substrate; a pixel defining layer disposed on the anode layer and the substrate; and an OLED device disposed in the pixel defining layer; wherein a photoelectric converter is further disposed in the pixel defining layer, the photoelectric converter being disposed on the anode layer and adjacent to the OLED device. According to the embodiment of the invention, the photoelectric converter is arranged in the pixel limiting layer, so that light of the OLED device can be absorbed and converted into electric energy, and on one hand, the electric energy can be directly used for compensating the OLED device with lower brightness and faster attenuation; on the other hand, the brightness of the corresponding pixel unit is judged by monitoring the electric signal, so that the OLED device with lower brightness and faster attenuation is compensated by the pixel driving circuit, and the integral brightness uniformity of the panel can be improved in both aspects.

Description

Display panel and display device
Technical Field
The invention relates to the technical field of display, in particular to a display panel and a display device.
Background
An Active-matrix Organic Light Emitting Diode (AMOLED) panel has a self-Light Emitting characteristic, and adopts a flexible substrate, a flexible low-temperature polysilicon (LTPS) process, and an Organic Light Emitting Diode (OLED) display technology. Compared with a Liquid Crystal Display (LCD), the AMOLED panel is self-luminous, does not require a backlight source, has the advantages of fast response, high color gamut, high contrast, wide viewing angle, low power consumption, foldability, light weight, thin thickness, simple structure, low cost and the like, and is considered to be one of the most promising products.
Unlike liquid crystal, the AMOLED adopts an active light emitting manner, and each Pixel (Pixel) unit automatically emits light; the problem of uneven Pixel light emission in different areas of the panel is very likely to occur. Factors such as uneven evaporation, different attenuation speeds of OLEDs with different colors and the like can cause uneven Pixel light emission in different areas of the panel, thereby causing uneven display of the whole panel and seriously affecting the product quality.
Disclosure of Invention
The embodiment of the invention provides a display panel and a display device, wherein the display panel in the embodiment compensates an OLED device with lower brightness and faster attenuation, and improves the brightness of a pixel unit where the OLED device is located, so that the overall brightness uniformity of the panel is improved, and meanwhile, the utilization efficiency of energy is greatly improved.
To solve the above problem, in a first aspect, the present application provides a display panel, including: a substrate; an anode layer disposed on the substrate; a pixel defining layer disposed on the anode layer and the substrate; and an OLED device disposed in the pixel defining layer; wherein a photoelectric converter is further disposed in the pixel defining layer, the photoelectric converter being disposed on the anode layer and adjacent to the OLED device.
According to some embodiments of the invention, the photoelectric converter is a solar cell or a photodetector.
According to some embodiments of the present invention, the photoelectric converter includes a positive electrode, a negative electrode, and an N-type semiconductor layer and a P-type semiconductor layer disposed therebetween, wherein the N-type semiconductor is in contact with the negative electrode and the P-type semiconductor is in contact with the positive electrode.
According to some embodiments of the invention, the photoelectric converter is electrically connected to the OLED device to compensate the OLED device.
According to some embodiments of the present invention, the OLED device further comprises a pixel driving circuit electrically connected to the photoelectric converter, wherein the pixel driving circuit compensates the OLED device by monitoring an electrical signal generated by the photoelectric converter.
According to some embodiments of the present invention, a width of the photoelectric converter is smaller than a width of the anode or a source and drain of the substrate.
According to some embodiments of the present invention, the photoelectric converter is disposed in a central region, an edge region or a bending region of the display panel to provide compensation for the OLED device located in the central region, the edge region or the bending region.
According to some embodiments of the present invention, the substrate further includes an alignment layer, a buffer layer, a polycrystalline material layer, a first insulating layer, a first routing layer, a second insulating layer, a second routing layer, a dielectric layer, a source drain routing layer, and a planarization layer.
According to some embodiments of the present invention, the planarization layer is provided with a through hole, and the anode layer is connected to the source/drain wiring layer through the through hole.
In a second aspect, the present application provides a display device prepared using the display panel according to any one of the first aspect.
Has the advantages that: according to the embodiment of the invention, the photoelectric converter is arranged in the pixel limiting layer, so that light which cannot be normally utilized on the side surface of the OLED device can be absorbed and converted into electric energy, on one hand, the electric energy can be directly used for compensating the OLED device with lower brightness and faster attenuation, the luminous brightness of the pixel unit where the OLED device is located is improved, and the utilization efficiency of energy is greatly improved; on the other hand, the brightness of the corresponding pixel unit is judged by monitoring the electric signal, so that the OLED device with lower brightness and faster attenuation is compensated through the pixel driving circuit, the brightness of the pixel unit where the OLED device is located is improved, and the overall brightness uniformity of the panel can be improved in both aspects.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
FIG. 1 is a schematic structural diagram of a display panel according to an embodiment of the present invention;
FIG. 2 is a schematic structural diagram of an embodiment of a photoelectric converter according to the present invention;
FIG. 3 is a schematic diagram illustrating an embodiment of compensating for light emission in an embodiment of the present invention;
FIG. 4 is a schematic diagram of an embodiment of a display panel according to an embodiment of the invention;
FIG. 5 is a schematic diagram of an embodiment of a display panel according to an embodiment of the invention;
FIG. 6 is a schematic diagram of an embodiment of a display panel according to an embodiment of the invention; and
fig. 7 is a schematic structural diagram of an embodiment of a display panel according to an embodiment of the present invention.
Detailed Description
The technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. It is to be understood that the described embodiments are merely exemplary of the invention, and not restrictive of the full scope of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", and the like, indicate orientations and positional relationships based on those shown in the drawings, and are used only for convenience of description and simplicity of description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be considered as limiting the present invention. Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, features defined as "first", "second", may explicitly or implicitly include one or more of the described features. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
In the prior light emitting scheme of the AMOLED, each pixel unit emits light autonomously, so that the problem of uneven light emission of the pixel units in different areas is very likely to occur.
Accordingly, the embodiment of the invention provides a display panel and a display device. The following are detailed below.
First, as shown in fig. 1, a schematic structural diagram of an embodiment of a display panel according to an embodiment of the present invention is shown. An embodiment of the present invention provides a display panel, including: a substrate 10; an anode layer 20 disposed on the substrate 10; a pixel defining layer 30 disposed on the anode layer 20 and the substrate 10; and an OLED device 40 disposed in the pixel defining layer 30; wherein a photoelectric converter 50 is further disposed in the pixel defining layer 30, the photoelectric converter 50 being disposed on the anode layer 20 and adjacent to the OLED device 40.
In the embodiment of the present invention, by arranging the photoelectric converter 50 in the pixel defining layer 30, light that cannot be normally utilized on the side surface of the OLED device 40 can be absorbed and converted into electric energy, on one hand, the electric energy can be directly used for compensating the OLED device 40 with lower brightness and faster attenuation, so as to improve the luminance of the pixel unit where the OLED device 40 is located, and greatly improve the utilization efficiency of energy; on the other hand, the brightness of the corresponding pixel unit is judged by monitoring the electric signal, so that the OLED device 40 with lower brightness and faster attenuation is compensated through the pixel driving circuit, the brightness of the pixel unit where the OLED device 40 is located is improved, and the overall brightness uniformity of the panel can be improved in both aspects.
In the present embodiment, the photoelectric converter 50 is a simple device for converting light energy into electric energy, including but not limited to a solar cell or a photodetector. Fig. 2 is a schematic structural diagram of an embodiment of a photoelectric converter according to an embodiment of the present invention. The photoelectric converter 50 has a simple structure and is easy to manufacture, and can be directly manufactured by Physical Vapor Deposition (PVD), Chemical Vapor Deposition (CVD), etching, or evaporation of a mask.
The photoelectric converter 50 includes a positive electrode, a negative electrode, and an N-type semiconductor layer and a P-type semiconductor layer provided therebetween, in which the N-type semiconductor is in contact with the negative electrode and the P-type semiconductor is in contact with the positive electrode. Preferably, the material of the photoelectric converter 50 includes perovskite or amorphous silicon, but may also be made of a multi-component thin film material or an organic material, and is not limited herein. In one specific embodiment, preferably, the N-type semiconductor is a silicon crystal (or germanium crystal) doped with a small amount of phosphorus (or antimony), since the semiconductor atom (e.g., silicon atom) is replaced by the impurity atom, four of the five outer electrons in the outer layer of the phosphorus atom form covalent bonds with the surrounding semiconductor atoms, and the extra one electron is hardly bound and easily becomes a free electron. Thus, N-type semiconductors become semiconductors with a high concentration of electrons, and their conductivity is mainly due to the conduction of free electrons; the P-type semiconductor is a silicon crystal (or germanium crystal) doped with a small amount of boron (or indium) as an impurity, and since a semiconductor atom (e.g., a silicon atom) is replaced by the impurity atom, when three outer electrons in the outer layer of the boron atom form covalent bonds with surrounding semiconductor atoms, a "hole" is generated, and the hole may attract bound electrons to "fill in" so that the boron atom becomes a positively charged ion. Thus, such semiconductors are capable of conducting electricity because they contain a relatively high concentration of "holes" ("corresponding to" positive charges). When light irradiates, the light can excite electrons in silicon atoms and convert the electrons into electrons and holes, the electrons and the holes are separated at the interface of the two layers of materials and move towards two sides respectively to generate convection of the electrons and the holes, and the electrons and the holes are influenced by the built-in potential and are attracted by the N-type semiconductor and the P-type semiconductor respectively and gathered at two ends. In this case, if the external portions are connected by electrodes, a circuit is formed, which is the principle of the photoelectric converter 50.
In the embodiment of the invention, the compensation is performed in various ways according to the uneven light emission of the pixel units in different areas. In another embodiment of the present invention, based on the above embodiment, the light emitted from the OLED device 40 upward is used for displaying, and the light emitted from the side surface is absorbed and used by the photoelectric converter 50, so as to convert the light energy into electric energy. Fig. 3 is a schematic diagram illustrating an embodiment of compensating for light emission according to an embodiment of the present invention. Meanwhile, the photoelectric converter 50 is electrically connected to the OLED device 0 to compensate the OLED device 40. If the light emitting luminance of the pixel unit where the OLED device 40 is located is smaller, the photoelectric converter 50 directly applies the converted electric energy to the OLED device 40 again, so as to improve the light emitting luminance of the pixel unit where the OLED device 40 is located. Therefore, the embodiment not only improves the brightness uniformity of the display panel, but also recycles the light energy which is emitted to the side and cannot be utilized, and greatly improves the energy utilization efficiency of the display panel.
Of course, in addition to the above-mentioned direct compensation of the OLED device 40 by the photoelectric converter 50, the compensation may also be performed indirectly by a pixel driving circuit. In another embodiment of the present invention, the display panel further includes the pixel driving circuit electrically connected to the photoelectric converter 50, and the pixel driving circuit compensates for the position of the OLED device 40 by monitoring the electric signal generated by the photoelectric converter 50. As can be seen from the above embodiments, the photoelectric converter 50 absorbs the light energy emitted from the OLED device 40 to the side and converts the light energy into electric energy, and the intensity of the electrical signal output by the photoelectric converter 50 is proportional to the intensity of the received light emission, namely the intensity of the electric signal of the electric energy is in direct proportion to the luminous intensity of the pixel unit where the OLED device is positioned, since, by incorporating the relevant detection device, the intensity of the electrical signal generated by the photoelectric converter 50 is monitored, the luminous intensity of the pixel unit where the OLED device 40 is located can be determined, and the corresponding monitoring signal is fed back to the processing unit, which controls the pixel driving circuit according to the monitoring signal, the OLED device 40 with lower brightness and faster attenuation is correspondingly compensated, so that the brightness of a pixel unit where the OLED device 40 is located is improved, and the problem of uneven brightness of the display panel is solved.
Fig. 4, fig. 5, and fig. 6 are diagrams of an embodiment of a display panel according to an embodiment of the present invention. The photoelectric converter 50 is disposed in a central region 001, an edge region 002 or a bending region 003 of the display panel to compensate the OLED device 40 located in the central region 001, the edge region 002 or the bending region 003. Since the center area 001 of the display panel is an area with the highest attention when the screen is used, the luminance display uniformity in this area is required to be high. By the method provided by the invention, the brightness compensation is carried out on the area, the brightness uniformity of the display panel is improved, and a product with higher quality can be obtained. It can be understood that the OLED device 40 in the edge region 002 of the display panel is more quickly attenuated than the OLED device 40 in the other region 004 due to the edge of the package, and similarly, the OLED device 40 in the bent region 003 of the display panel is more quickly attenuated than the OLED device 40 in the other region 004 due to the bending, so that the edge region 002 and the bent region 003 of the display panel are also necessary to be compensated for the brightness, so as to achieve the effect of uniform display. It should be noted that the three regions mentioned herein are not mandatory, and the photoelectric converter 50 may be disposed in any region or any regions where brightness uniformity needs to be improved, which is preferred.
Fig. 7 is a schematic structural diagram of an embodiment of a display panel according to an embodiment of the present invention. The substrate 10 further includes an alignment layer 1001, a buffer layer 1002, a polycrystalline material layer 1003, a first insulating layer 1004, a first routing layer 1005, a second insulating layer 1006, a second routing layer 1007, a dielectric layer 1008, a source drain routing layer 1009, and a planarization layer 1010. The alignment layer 1001, the buffer layer 1002, the polycrystalline material layer 1003, the first insulating layer 1004, the first routing layer 1005, the second insulating layer 1006, the second routing layer 1007, the dielectric layer 1008, and the planarization layer 1010 are sequentially stacked, the upper surface of a source/drain electrode of the source/drain routing layer 1009 contacts the planarization layer 1010, the lower surface of the source/drain electrode contacts the polycrystalline material layer 1003 and penetrates through a plurality of film layers, the width of the photoelectric converter 50 is smaller than the width of the anode layer 20 or the source/drain electrode of the source/drain routing layer 1009, in another embodiment, a through hole is formed in the planarization layer 1010, and the anode layer 20 is connected with the source/drain routing layer 1009 through the through hole.
In order to better implement the display panel in the embodiment of the present invention, on the basis of the display panel, an embodiment of the present invention further provides a display device, where the display device includes the display panel as described in the above embodiment.
By employing the display panel as described in the above embodiments, the performance of the display device is further improved.
In the above embodiments, the descriptions of the respective embodiments have respective emphasis, and parts that are not described in detail in a certain embodiment may refer to the above detailed descriptions of other embodiments, and are not described herein again.
In a specific implementation, each unit or structure may be implemented as an independent entity, or may be combined arbitrarily to be implemented as one or several entities, and the specific implementation of each unit or structure may refer to the foregoing method embodiment, which is not described herein again.
The above operations can be implemented in the foregoing embodiments, and are not described in detail herein.
The display panel and the display device provided by the embodiment of the present invention are described in detail above, and the principle and the embodiment of the present invention are explained herein by applying specific examples, and the description of the above embodiments is only used to help understanding the method and the core idea of the present invention; meanwhile, for those skilled in the art, according to the idea of the present invention, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present invention.

Claims (10)

1. A display panel, comprising:
a substrate;
an anode layer disposed on the substrate;
a pixel defining layer disposed on the anode layer and the substrate; and
an OLED device disposed in the pixel defining layer;
wherein a photoelectric converter is further disposed in the pixel defining layer, the photoelectric converter being disposed on the anode layer and adjacent to the OLED device.
2. The display panel according to claim 1, wherein the photoelectric converter is a solar cell or a photodetector.
3. The display panel according to claim 1 or 2, wherein the photoelectric converter comprises a positive electrode, a negative electrode, and an N-type semiconductor layer and a P-type semiconductor layer provided therebetween, wherein the N-type semiconductor is in contact with the negative electrode, and the P-type semiconductor is in contact with the positive electrode.
4. The display panel of claim 1, wherein the photoelectric converter is electrically connected to the OLED device to compensate the OLED device.
5. The display panel of claim 1, further comprising a pixel driving circuit electrically connected to the photoelectric converter, wherein the pixel driving circuit compensates the OLED device by monitoring an electrical signal generated by the photoelectric converter.
6. The display panel according to claim 1, wherein a width of the photoelectric converter is smaller than a width of the anode or a source-drain of the substrate.
7. The display panel of claim 1, wherein the photoelectric converter is disposed in a central region, an edge region or a bending region of the display panel to provide compensation for the OLED device located in the central region, the edge region or the bending region.
8. The display panel of claim 1, wherein the substrate further comprises an alignment layer, a buffer layer, a polycrystalline material layer, a first insulating layer, a first routing layer, a second insulating layer, a second routing layer, a dielectric layer, a source drain routing layer, and a planarization layer.
9. The display panel of claim 8, wherein the planarization layer has a via hole, and the anode layer is connected to the source/drain trace layer through the via hole.
10. A display device characterized by comprising the display panel according to any one of claims 1 to 9.
CN202010108369.XA 2020-02-21 2020-02-21 Display panel and display device Pending CN111293154A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111863902A (en) * 2020-07-21 2020-10-30 武汉华星光电半导体显示技术有限公司 Display panel, display panel preparation method and display device
CN117012770A (en) * 2023-09-27 2023-11-07 盐城鸿石智能科技有限公司 Micro LED capable of monitoring brightness and preparation method thereof

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110221720A1 (en) * 2010-03-11 2011-09-15 Au Optronics Corporation Amoled display with optical feedback compensation
CN109904189A (en) * 2019-03-15 2019-06-18 京东方科技集团股份有限公司 Pixel unit and array substrate, display device
US20190386033A1 (en) * 2018-06-15 2019-12-19 Hefei Xinsheng Optoelectronics Technology Co., Ltd. Oled array substrate, method for fabricating the same, oled pixel circuit, and display device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110221720A1 (en) * 2010-03-11 2011-09-15 Au Optronics Corporation Amoled display with optical feedback compensation
US20190386033A1 (en) * 2018-06-15 2019-12-19 Hefei Xinsheng Optoelectronics Technology Co., Ltd. Oled array substrate, method for fabricating the same, oled pixel circuit, and display device
CN109904189A (en) * 2019-03-15 2019-06-18 京东方科技集团股份有限公司 Pixel unit and array substrate, display device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111863902A (en) * 2020-07-21 2020-10-30 武汉华星光电半导体显示技术有限公司 Display panel, display panel preparation method and display device
CN117012770A (en) * 2023-09-27 2023-11-07 盐城鸿石智能科技有限公司 Micro LED capable of monitoring brightness and preparation method thereof
CN117012770B (en) * 2023-09-27 2023-12-08 盐城鸿石智能科技有限公司 Micro LED capable of monitoring brightness and preparation method thereof

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Application publication date: 20200616