CN1112837C - Preparation technology of high-flux neutral atom beam - Google Patents
Preparation technology of high-flux neutral atom beam Download PDFInfo
- Publication number
- CN1112837C CN1112837C CN 97105079 CN97105079A CN1112837C CN 1112837 C CN1112837 C CN 1112837C CN 97105079 CN97105079 CN 97105079 CN 97105079 A CN97105079 A CN 97105079A CN 1112837 C CN1112837 C CN 1112837C
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- CN
- China
- Prior art keywords
- neutral
- atom
- atomic
- line
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000007935 neutral effect Effects 0.000 title claims abstract description 26
- 238000002360 preparation method Methods 0.000 title claims description 7
- 238000005516 engineering process Methods 0.000 title abstract description 11
- 230000004907 flux Effects 0.000 claims abstract description 16
- 230000008878 coupling Effects 0.000 claims description 5
- 238000010168 coupling process Methods 0.000 claims description 5
- 238000005859 coupling reaction Methods 0.000 claims description 5
- 230000005684 electric field Effects 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 abstract description 6
- 239000002184 metal Substances 0.000 abstract description 6
- 238000007599 discharging Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 125000004429 atom Chemical group 0.000 description 28
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 14
- 239000001301 oxygen Substances 0.000 description 14
- 229910052760 oxygen Inorganic materials 0.000 description 14
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 239000007789 gas Substances 0.000 description 8
- 150000002500 ions Chemical class 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 238000004088 simulation Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 238000006386 neutralization reaction Methods 0.000 description 2
- 125000004433 nitrogen atom Chemical group N* 0.000 description 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen(.) Chemical compound [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004949 mass spectrometry Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
Landscapes
- Plasma Technology (AREA)
- Particle Accelerators (AREA)
Abstract
A technology for preparing high-flux neutral atom beam stream includes such steps as discharging molecular gas to form plasma, and confining it by strong magnetic field to obtain high-density plasma beam with density greater than 1012Ion/cm3The method is characterized in that: the high atomic number metal plate with negative bias is used as the neutral target, the atomic number of the metal plate is more than 30 larger than that of the atomic number of the atomic beam to be formed, the negative bias is applied to ensure that the incident kinetic energy of the plasma beam is within the range of 5-60eV, and the neutral atomic beam is reflected from the neutral target, namely the required neutral atomic beam. The invention obtains the neutral atom beam with high flux and high purity.
Description
The present invention relates to the preparation method of the highly purified neutral atom line of atom line, particularly high flux.
Generation and control technology for ion beam current is ripe at present, but for the neutral atom line, particularly high flux is (greater than 10
13Atom/cm
2.s) the neutral atom line do not have as yet open mature technology (as Bruce A.Banbks.Sharon K.Rutledge, and Joyce A.Brady, The NASAatomic oxygen effects test program, N89-12582, p.61).Existing beam of neutral atoms takes place and control technology, as: (! ) utilize chemical reaction to produce the technology of atomic beam in some laboratories for studying the interaction of atom and material, though can obtain purer atomic beam, the atomic beam circulation that it produced generally is lower than 10
11Atom/cm
2.s, kinetic energy is lower than 0.1ev.(2) charging into molecular gas in discharge plasma, to carry out ion and collision of molecules exchange electronics be the neutralization technology that more generally adopts at present to produce beam of neutral atoms, and this technology is suitable for having ion beam current than small throughput (less than 10
12Ion/cm
2.s) with than the ion (greater than 100ev) of kinetic energy.And this technology is difficult to obtain highly purified atomic beam.
The object of the present invention is to provide a kind of technology of preparing with high flux, highly purified neutral atom line.
The invention provides a kind of preparation method of high flux neutral atom line, be applicable to the atom that can produce molecular gas, at first molecular gas discharge is formed plasma, be constrained to the high-density plasma bundle by high-intensity magnetic field again, require density greater than 10
12Ion/cm
3It is characterized in that: be with the high atomic number metal plate of back bias voltage as neutralized target with one, the atomic number that the atomic number of metallic plate will form atomic beam is big more than 30, the back bias voltage that is applied should make the incident kinetic energy of beam-plasma in the 5-60ev scope, is required beam of neutral atoms by what reflect on the neutral target.Gas discharge can adopt the DC electric field coupling, RF-coupled or microwave coupling.Confining magnetic field is greater than 1000 Gausses.
When the particle in the plasma during near the neutralized target metallic surface, because the effect of back bias voltage, the particle of positively charged is accelerated, electronics e then is ostracised, the energy of ions size is determined by accelerating voltage, the ion that is accelerated is further near the metallic target surface time, some electronics in the metal can because of Auger transition or resonant transition be left in metal surface and the ion and the formation neutral atom, the atom that neutralization forms further with the atomic collision on metallic target surface, if the quality of target atom is more than incident atoms big (approximately greater than more than 30), then Peng Zhuan result is that incoming particle is reflected, and forms a branch of neutral atom line.The people such as physical mechanism John W.Cuthbertson of reflection have comparatively detailed argumentation, see JohoW.Cuthbertson, Robert W.Motley and Villiam D.Langer, Rev.Sci.Instrm.63 (11), Nov.1992.The flux f of atom line can be by confining magnetic field intensity B control, general f ∝ B
2, its proportionality coefficient needs by measuring.The kinetic energy E of atom line
IncBe directly proportional with the back bias voltage Δ V value that puts on neutralized target, its proportionality coefficient generally also needs measuring.The kinetic energy of general incident ion bundle can be in 5-50ev scope inner control.
The present invention can obtain controlled high flux neutral atom line in the laboratory, and beam flux can be at 1013-10
16Atom/cm
2.s scope control, line kinetic energy can be controlled in the 5-40ev scope, atom line kind can be unrestricted substantially, and purity can be near 100%, and the acquisition of this atom line can be research atomic beam and material interaction and develops possible atomic beam material surface modifying provides a kind of new technology.By embodiment in detail the present invention is described in detail below in conjunction with accompanying drawing.
Accompanying drawing 1. atom line occurring principle block diagrams;
Accompanying drawing 2. simulations generate the schematic diagram of device in kind of atom line.
Embodiment 1 elemental oxygen line takes place and control
Simulation generates the experimental provision principle of elemental oxygen line and sees accompanying drawing two.It at first produces oxygen plasma by microwave coupling oxygen discharge, is that the metal molybdenum plate collision reflection that 2000 Gausses' solenoid coil axial magnetic field constraint back and applies back bias voltage obtains the elemental oxygen line by a mean intensity again.Common oxygen is adopted in experiment, and the oxygen operating pressure is controlled at 2-3 * 10
-3Holder, vacuum chamber back of the body end vacuum is evacuated to 10
-6Holder, neutralized target add back bias voltage-30～-12V, confining magnetic field is controlled at about 2000Gs, measurement result shows between atomic oxygen flux f and the magnetic field intensity B satisfied: f (atoms/cm
2.s)=2.5 * 10
9B
2(Gs
2), elemental oxygen kinetic energy E
IncAnd satisfy between the neutralized target back bias voltage Δ V: E
INC=-0.3 Δ V+5.The elemental oxygen flux peak can reach 10
16Oxygen atom/cm
2.s, elemental oxygen kinetic energy can be in 5-40ev scope inner control and adjusting.Mass spectroscopy to the elemental oxygen line shows that the atom oxygen purity reaches 99% in the line.
Embodiment 2 Nitrogen Atom lines take place and control
The experimental provision principle that simulation generates Nitrogen Atom is identical with embodiment 1.Gas adopts high pure nitrogen, and the operating air pressure of control discharge rationally can obtain the nitrogen-atoms line.Concrete experiment condition is as follows: (a) back of the body end vacuum is evacuated to 10
-6Holder: (b) feed nitrogen, operating air pressure is controlled at 2-5 * 10
-3Holder; (c) add back bias voltage-30V; (d) confining magnetic field is controlled at about 1500Gs.The nitrogen-atoms beam flux that obtains is 10
15Atoms/cm
2.s, energy is 5ev.
Embodiment 3 atom argon lines take place and control
The principle of device that simulation generates the atom argon is identical with embodiment 1, and gas adopts high-purity argon gas, earlier the equipment vacuum is evacuated to 10
-6Holder feeds argon gas then, and air pressure is controlled at 10
-2-10
-3The holder, add back bias voltage-30～-130V, confining magnetic field is controlled at 2000Gs.Can obtain energy at 10～40ec, beam flux is about 10
16Atoms/cm
2.s neutral ar atmo line.
Claims (3)
1. the preparation method of a high flux neutral atom line is applicable to the atom that can produce molecular gas, at first molecular gas discharge is formed plasma, is constrained to the high-density plasma bundle by high-intensity magnetic field again, requires density greater than 10
12Ion/cm
3It is characterized in that: be with the metallic plate of back bias voltage as neutralized target with one, the atomic number that the atomic number of metallic plate will form atomic beam is big more than 30, the back bias voltage that is applied should make the incident kinetic energy of plasma beam in the 5-60ev scope, is required beam of neutral atoms by what reflect on the neutral target.
2. by the preparation method of the described high flux neutral atom of claim 1 line, it is characterized in that: gas discharge adopts the DC electric field coupling, RF-coupled or microwave coupling.
3. by the preparation method of the described high flux neutral atom of claim 2 line, it is characterized in that: confining magnetic field is greater than 1000 Gausses.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 97105079 CN1112837C (en) | 1997-02-04 | 1997-02-04 | Preparation technology of high-flux neutral atom beam |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 97105079 CN1112837C (en) | 1997-02-04 | 1997-02-04 | Preparation technology of high-flux neutral atom beam |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1190323A CN1190323A (en) | 1998-08-12 |
| CN1112837C true CN1112837C (en) | 2003-06-25 |
Family
ID=5167640
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 97105079 Expired - Fee Related CN1112837C (en) | 1997-02-04 | 1997-02-04 | Preparation technology of high-flux neutral atom beam |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1112837C (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100555849B1 (en) * | 2003-11-27 | 2006-03-03 | 주식회사 셈테크놀러지 | Neutral particle beam processing apparatus |
| RU2696268C2 (en) * | 2014-11-19 | 2019-08-01 | Таэ Текнолоджиз, Инк. | Photon neutraliser for neutral particle beam injectors |
| CN115866866A (en) * | 2022-12-06 | 2023-03-28 | 哈尔滨工业大学 | High-flux neutral atomic oxygen beam generation system and generation method |
-
1997
- 1997-02-04 CN CN 97105079 patent/CN1112837C/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN1190323A (en) | 1998-08-12 |
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