CN1112837C - Preparation technology of high-flux neutral atom beam - Google Patents
Preparation technology of high-flux neutral atom beam Download PDFInfo
- Publication number
- CN1112837C CN1112837C CN 97105079 CN97105079A CN1112837C CN 1112837 C CN1112837 C CN 1112837C CN 97105079 CN97105079 CN 97105079 CN 97105079 A CN97105079 A CN 97105079A CN 1112837 C CN1112837 C CN 1112837C
- Authority
- CN
- China
- Prior art keywords
- atomic
- flux
- neutral atom
- atom beam
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000007935 neutral effect Effects 0.000 title claims abstract description 23
- 238000005516 engineering process Methods 0.000 title abstract description 10
- 238000002360 preparation method Methods 0.000 title abstract description 4
- 229910052751 metal Inorganic materials 0.000 claims abstract description 12
- 239000002184 metal Substances 0.000 claims abstract description 12
- 150000002500 ions Chemical class 0.000 claims abstract description 9
- 238000006386 neutralization reaction Methods 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 4
- 230000005684 electric field Effects 0.000 claims description 2
- 230000008878 coupling Effects 0.000 claims 3
- 238000010168 coupling process Methods 0.000 claims 3
- 238000005859 coupling reaction Methods 0.000 claims 3
- 125000004429 atom Chemical group 0.000 description 19
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 14
- 230000004907 flux Effects 0.000 description 8
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 7
- 239000007789 gas Substances 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 3
- 238000010884 ion-beam technique Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 125000004433 nitrogen atom Chemical group N* 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004949 mass spectrometry Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
Landscapes
- Plasma Technology (AREA)
- Particle Accelerators (AREA)
Abstract
一种高通量中性原子束流的制备技术，适用于能够产生分子气体的原子，首先将分子气体放电形成等离子体，再由强磁场约束成高密度等离子体束，要求密度大于1012离子/cm3，其特征在于：以一带负偏压的高原子序数金属板作为中性化靶，金属板的原子序较要形成原子束的原子序数大30以上，所施加的负偏压应使等离子体束的入射动能在5-60ev范围内，由中性靶上反射出来的即所需中性原子束。本发明获得高通量、高纯度的中性原子束流。
A high-flux neutral atom beam preparation technology is applicable to atoms that can generate molecular gas. First, the molecular gas is discharged to form plasma, and then it is constrained by a strong magnetic field to form a high-density plasma beam, requiring a density greater than 10 12 ions/cm 3. The characteristics are: a high atomic number metal plate with a negative bias voltage is used as a neutralization target, the atomic number of the metal plate is greater than the atomic number of the atomic beam to be formed by more than 30, and the negative bias voltage applied should make the incident kinetic energy of the plasma beam within the range of 5-60ev, and the desired neutral atom beam is reflected from the neutral target. The present invention obtains a high-flux, high-purity neutral atom beam.
Description
本发明涉及原子束流，特别是高通量高纯度的中性原子束流的制备方法。The invention relates to an atomic beam, especially a method for preparing a high-throughput and high-purity neutral atomic beam.
目前对于离子束流的发生与控制技术较成熟，但对于中性原子束流，特别是高通量(大于1013原子/cm2.s)中性原子束流尚未有公开成熟技术(如Bruce A.Banbks.Sharon K.Rutledge,and Joyce A.Brady,The NASAatomic oxygen effects test program，N89-12582，p.61)。已有的中性原子束发生与控制技术，如：(！)在一些实验室为研究原子与材料相互作用利用化学反应产生原子束的技术，虽然可获得较纯的原子束，但其所产生的原子束流通量一般低于1011原子/cm2.s，动能低于0.1ev。(2)向放电等离子体中充入分子气体进行离子与分子间的碰撞交换电子以产生中性原子束是目前较普遍采用的中性化技术，该技术适合于具有较低通量的离子束流(小于1012离子/cm2.s)和较高动能的离子(大于100ev)。并且该技术难以获得高纯度的原子束。At present, the generation and control technology of ion beams is relatively mature, but for neutral atom beams, especially high-flux (greater than 10 13 atoms/cm 2 .s) neutral atom beams, there is no public mature technology (such as Bruce A. Banbks. Sharon K. Rutledge, and Joyce A. Brady, The NASAatomic oxygen effects test program, N89-12582, p.61). The existing neutral atomic beam generation and control technologies, such as: (!) In some laboratories, the technology of using chemical reactions to generate atomic beams to study the interaction between atoms and materials, although relatively pure atomic beams can be obtained, but the produced The flux of the atomic beam is generally lower than 10 11 atoms/cm 2 .s, and the kinetic energy is lower than 0.1 eV. (2) Filling the discharge plasma with molecular gas to exchange electrons by collisions between ions and molecules to generate neutral atomic beams is currently a more commonly used neutralization technology, which is suitable for ion beams with lower flux flow (less than 10 12 ions/cm 2 .s) and higher kinetic energy ions (greater than 100ev). And this technology is difficult to obtain high-purity atomic beams.
本发明的目的在于提供一种具有高通量、高纯度的中性原子束流的制备技术。The purpose of the present invention is to provide a high-throughput, high-purity neutral atom beam preparation technology.
本发明提供了一种高通量中性原子束流的制备方法，适用于能够产生分子气体的原子，首先将分子气体放电形成等离子体，再由强磁场约束成高密度等离子体束，要求密度大于1012离子/cm3，其特征在于：以一带负偏压的高原子序数金属板作为中性化靶，金属板的原子序数较要形成原子束的原子序数大30以上，所施加的负偏压应使等离子束的入射动能在5-60ev范围内，由中性靶上反射出来的即所需中性原子束。气体放电可以采用直流电场耦合，射频耦合或微波耦合。约束磁场大于1000高斯。The invention provides a preparation method of a high-flux neutral atom beam, which is suitable for atoms that can generate molecular gas. First, the molecular gas is discharged to form plasma, and then constrained by a strong magnetic field to form a high-density plasma beam. The required density greater than 10 12 ions/cm 3 , characterized in that a metal plate with a high atomic number with a negative bias is used as a neutralization target, the atomic number of the metal plate is 30 or more greater than the atomic number of the atomic beam to be formed, and the applied negative The bias voltage should make the incident kinetic energy of the plasma beam within the range of 5-60ev, and the desired neutral atomic beam is reflected from the neutral target. Gas discharge can be coupled by DC electric field, radio frequency or microwave. The confinement magnetic field is greater than 1000 Gauss.
当等离子体中的粒子接近中性化靶金属的表面时，由于负偏压的作用，带正电的粒子被加速，而电子e则被排斥，离子的能量大小由加速电压决定，被加速的离子在进一步接近金属靶表面时，金属中的一些电子会因俄歇跃迁或共振跃迁而离开金属表面与离子中和形成中性原子，中和形成的原子进一步与金属靶表面的原子碰撞，如果靶原子的质量远比入射原子大(约大于30以上)，则碰撞的结果是入射粒子被反射回来，形成一束中性原子束流。反射的物理机制John W.Cuthbertson等人有较为详细的论述，见JohoW.Cuthbertson，Robert W.Motley and Villiam D.Langer，Rev.Sci.Instrm.63(11)，Nov.1992。原子束流的通量f可由约束磁场强度B控制，一般f∝B2，其比例系数需由实验测定。原子束流的动能Einc与施加于中性化靶的负偏压ΔV值成正比，其比例系数一般也需实验测定。一般入射离子束的动能可在5-50ev范围内控制。When the particles in the plasma approach the surface of the neutralized target metal, due to the negative bias, the positively charged particles are accelerated, while the electrons e are repelled. The energy of the ions is determined by the accelerating voltage. The accelerated When the ions are further approaching the surface of the metal target, some electrons in the metal will leave the metal surface due to Auger transition or resonance transition and neutralize the ion to form neutral atoms, and the neutralized atoms will further collide with the atoms on the metal target surface, if The mass of the target atoms is much greater than that of the incident atoms (approximately more than 30), and the result of the collision is that the incident particles are reflected back to form a beam of neutral atoms. The physical mechanism of reflection is discussed in detail by John W. Cuthbertson et al., see Joho W. Cuthbertson, Robert W. Motley and Villiam D. Langer, Rev. Sci. Instrm.63(11), Nov.1992. The flux f of the atomic beam can be controlled by the confinement magnetic field strength B, generally f∝B 2 , and its proportional coefficient needs to be determined by experiments. The kinetic energy E inc of the atomic beam is proportional to the value of the negative bias ΔV applied to the neutralized target, and its proportional coefficient generally needs to be determined experimentally. Generally, the kinetic energy of the incident ion beam can be controlled in the range of 5-50ev.
本发明可在实验室获得可控的高通量中性原子束流，束流通量可在1013-1016原子/cm2.s范围控制，束流动能可在5-40ev范围控制，原子束流种类可基本不受限制，纯度可接近100％，这种原子束流的获得可为研究原子束与材料相互作用和发展可能的原子束材料表面改性提供一种新技术。下面结合附图通过实施例详述本发明。The present invention can obtain a controllable high-flux neutral atom beam in the laboratory, the beam flux can be controlled in the range of 1013-10 16 atoms/cm 2 .s, the beam energy can be controlled in the range of 5-40ev, and the atomic beam The type of flow can be basically unlimited, and the purity can be close to 100%. The acquisition of this atomic beam flow can provide a new technology for the study of the interaction between atomic beam and materials and the development of possible surface modification of atomic beam materials. The present invention will be described in detail below in conjunction with the accompanying drawings through the embodiments.
附图1.原子束流发生原理方框图；Accompanying drawing 1. Block diagram of the principle of atomic beam generation;
附图2.模拟生成原子束流的实物装置原理图。Accompanying drawing 2. Schematic diagram of the physical device for simulating the generation of atomic beams.
实施例1原子氧束流发生与控制Embodiment 1 Atomic oxygen beam generation and control
模拟生成原子氧束流的实验装置原理见附图二。它首先由微波耦合氧气放电产生氧等离子体，再由一平均强度为2000高斯的螺线管线圈轴向磁场约束后与一施加负偏压的金属钼板碰撞反射获得原子氧束流。实验采用普通氧气，氧气工作压力控制在2-3×10-3托，真空室背底真空抽至10-6托，中性化靶加负偏压-30～-12V，约束磁场控制在2000Gs左右，测定结果表明原子氧通量f与磁场强度B之间满足：f(atoms/cm2.s)＝2.5×109B2(Gs2)，原子氧动能Einc与中性化靶负偏压ΔV之间满足：EINC＝-0.3ΔV+5。原子氧最大通量可达1016氧原子/cm2.s，原子氧动能可在5-40ev范围内控制与调节。对原子氧束流的质谱测定表明束流中原子氧的纯度达99％。The principle of the experimental device for simulating the generation of atomic oxygen beams is shown in Figure 2. It first generates oxygen plasma by microwave-coupled oxygen discharge, and then is confined by an axial magnetic field of a solenoid coil with an average strength of 2000 gauss, and then collides with a metal molybdenum plate with a negative bias to obtain an atomic oxygen beam. Ordinary oxygen was used in the experiment, the oxygen working pressure was controlled at 2-3×10 -3 Torr, the vacuum chamber was pumped to 10 -6 Torr, the neutralized target was negatively biased at -30~-12V, and the confinement magnetic field was controlled at 2000Gs The measurement results show that the relationship between the atomic oxygen flux f and the magnetic field strength B satisfies: f(atoms/cm 2 .s)=2.5×10 9 B 2 (Gs 2 ), the atomic oxygen kinetic energy E inc is negative to the neutralization target The bias voltage ΔV satisfies: E INC =-0.3ΔV+5. The maximum flux of atomic oxygen can reach 10 16 oxygen atoms/cm 2 .s, and the kinetic energy of atomic oxygen can be controlled and adjusted within the range of 5-40ev. The mass spectrometry of the atomic oxygen beam shows that the purity of the atomic oxygen in the beam is up to 99%.
实施例2原子氮束流发生与控制Example 2 Generation and Control of Atomic Nitrogen Beam
模拟生成原子氮的实验装置原理与实施例1相同。气体采用高纯氮气，合理控制放电工作气压，可获得氮原子束流。具体实验条件如下：(a)背底真空抽至10-6托：(b)通入氮气，将工作气压控制在2-5×10-3托；(c)加负偏压-30V；(d)约束磁场控制在1500Gs左右。所获得氮原子束流通量为1015atoms/cm2.s，能量为5ev。The principle of the experimental device for simulating the generation of atomic nitrogen is the same as that of Example 1. The gas is high-purity nitrogen, and the discharge working pressure is reasonably controlled to obtain nitrogen atom beams. The specific experimental conditions are as follows: (a) the back is vacuumed to 10 -6 Torr; (b) nitrogen gas is introduced, and the working pressure is controlled at 2-5×10 -3 Torr; (c) a negative bias voltage of -30V is applied; ( d) The confinement magnetic field is controlled at around 1500Gs. The flux of the obtained nitrogen atom beam is 10 15 atoms/cm 2 .s, and the energy is 5 eV.
实施例3原子氩束流发生与控制Example 3 Generation and Control of Atomic Argon Beam
模拟生成原子氩的装置原理与实施例1相同，气体采用高纯氩气，先将设备真空抽至10-6托，然后通入氩气，气压控制在10-2-10-3托，加负偏压-30～-130V，约束磁场控制在2000Gs。可获得能量在10～40ec，束流通量约为1016atoms/cm2.s的中性氩原子束流。The principle of the device for simulating the generation of atomic argon is the same as that of Example 1. The gas is high-purity argon. The equipment is first vacuumed to 10 -6 Torr, and then argon is introduced. The air pressure is controlled at 10 -2 -10 -3 Torr. The negative bias voltage is -30~-130V, and the confinement magnetic field is controlled at 2000Gs. A beam of neutral argon atoms with an energy of 10-40ec and a flux of about 10 16 atoms/cm 2 .s can be obtained.
Claims (3)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 97105079 CN1112837C (en) | 1997-02-04 | 1997-02-04 | Preparation technology of high-flux neutral atom beam |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 97105079 CN1112837C (en) | 1997-02-04 | 1997-02-04 | Preparation technology of high-flux neutral atom beam |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1190323A CN1190323A (en) | 1998-08-12 |
| CN1112837C true CN1112837C (en) | 2003-06-25 |
Family
ID=5167640
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 97105079 Expired - Fee Related CN1112837C (en) | 1997-02-04 | 1997-02-04 | Preparation technology of high-flux neutral atom beam |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1112837C (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100555849B1 (en) * | 2003-11-27 | 2006-03-03 | 주식회사 셈테크놀러지 | Neutral particle beam processing device |
| RU2696268C2 (en) * | 2014-11-19 | 2019-08-01 | Таэ Текнолоджиз, Инк. | Photon neutraliser for neutral particle beam injectors |
| CN115866866A (en) * | 2022-12-06 | 2023-03-28 | 哈尔滨工业大学 | A high-throughput neutral atomic oxygen beam generation system and generation method |
-
1997
- 1997-02-04 CN CN 97105079 patent/CN1112837C/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN1190323A (en) | 1998-08-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Walton et al. | Electron beam generated plasmas for ultra low Te processing | |
| Choi et al. | The role of negative ions in the formation of particles in low‐pressure plasmas | |
| Kondo et al. | A self-consistent numerical analysis of a planar dc magnetron dischargeby the particle-in-cell/Monte Carlo method | |
| Ishikawa | Negative‐ion sources for modification of materials | |
| CN109786204B (en) | Method and ion source for extracting ion beam by using gas cluster sputtering target | |
| CN1112837C (en) | Preparation technology of high-flux neutral atom beam | |
| US7510666B2 (en) | Time continuous ion-ion plasma | |
| JP2008202942A (en) | Fusion neutron generator | |
| Sheridan et al. | Electron and ion transport in magnetron plasmas | |
| Tarvainen | Studies of electron cyclotron resonance ion source plasma physics | |
| JP3064214B2 (en) | Fast atom beam source | |
| JP2849771B2 (en) | Sputter type ion source | |
| Matsumoto et al. | Development and properties of a Freeman-type hybrid ion source | |
| JPH089778B2 (en) | Ion source | |
| JPS62224686A (en) | Ion source | |
| JPH01219161A (en) | Ion source | |
| Guharay et al. | Characteristics of focused beam spots using negative ion beams from a compact surface plasma source and merits for new applications | |
| AU2005200629A1 (en) | High current density ion source | |
| JPH089780B2 (en) | Thin film forming equipment | |
| JP3039985B2 (en) | Microwave ion source for multimer ion generation and ion beam irradiation device using this ion source | |
| JP2552697B2 (en) | Ion source | |
| Alton | Sources of low-charge-state positive-ion beams | |
| JPH1092794A (en) | Plasma treatment device and plasma treatment method | |
| Kubart et al. | Modelling of magnetron sputtering process | |
| JPH07107189B2 (en) | Thin film forming equipment |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |