CN111272701A - Gas sensor based on metal oxide nanocrystals and use method thereof - Google Patents
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- 229910044991 metal oxide Inorganic materials 0.000 title claims abstract description 168
- 150000004706 metal oxides Chemical class 0.000 title claims abstract description 168
- 239000002159 nanocrystal Substances 0.000 title claims abstract description 103
- 238000000034 method Methods 0.000 title claims description 7
- 239000007789 gas Substances 0.000 claims abstract description 86
- 238000002198 surface plasmon resonance spectroscopy Methods 0.000 claims abstract description 30
- 239000011148 porous material Substances 0.000 claims abstract description 26
- 239000001301 oxygen Substances 0.000 claims abstract description 21
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 239000010409 thin film Substances 0.000 claims description 32
- 230000008859 change Effects 0.000 claims description 13
- UBEWDCMIDFGDOO-UHFFFAOYSA-N cobalt(2+);cobalt(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[Co+2].[Co+3].[Co+3] UBEWDCMIDFGDOO-UHFFFAOYSA-N 0.000 claims description 12
- 239000010408 film Substances 0.000 claims description 12
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 11
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 claims description 10
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 claims description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 9
- 229910021389 graphene Inorganic materials 0.000 claims description 8
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims description 7
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- 229910000480 nickel oxide Inorganic materials 0.000 claims description 6
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 6
- 229910000476 molybdenum oxide Inorganic materials 0.000 claims description 5
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 5
- 229910001887 tin oxide Inorganic materials 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 3
- 230000001678 irradiating effect Effects 0.000 claims description 3
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 229910021426 porous silicon Inorganic materials 0.000 claims description 2
- 229910021423 nanocrystalline silicon Inorganic materials 0.000 claims 1
- 239000003574 free electron Substances 0.000 abstract description 32
- 238000001514 detection method Methods 0.000 abstract description 16
- -1 oxygen anions Chemical class 0.000 abstract description 15
- 230000005684 electric field Effects 0.000 description 10
- 230000035945 sensitivity Effects 0.000 description 9
- 230000000694 effects Effects 0.000 description 5
- 230000002349 favourable effect Effects 0.000 description 4
- 239000011787 zinc oxide Substances 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000005751 Copper oxide Substances 0.000 description 2
- 230000002776 aggregation Effects 0.000 description 2
- 238000004220 aggregation Methods 0.000 description 2
- 229910000431 copper oxide Inorganic materials 0.000 description 2
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 239000002341 toxic gas Substances 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000004939 coking Methods 0.000 description 1
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005272 metallurgy Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/41—Refractivity; Phase-affecting properties, e.g. optical path length
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
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- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
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Abstract
The invention relates to a gas sensor based on metal oxide nanocrystals, which comprises a substrate layer, wherein a metal oxide film layer is arranged above the substrate layer, a porous material layer is arranged on the metal oxide film layer, and a metal oxide nanocrystal layer is arranged above the porous material layer; when the gas to be detected contacts the sensor, gas molecules react with more oxygen anions to generate more free electrons, the free electrons return to the metal oxide nanocrystal and the metal oxide film layer, the refractive index of the sensor to infrared light is changed violently, so that the local surface plasmon resonance wavelength is caused to move violently, and the detection of the gas molecules can be realized through the movement of the local surface plasmon resonance wavelength.
Description
Technical Field
The invention belongs to the technical field of gas detection, and particularly relates to a gas sensor based on metal oxide nanocrystals and a use method thereof.
Background
The sensor (english name: transducer/sensor) is a detection device, which can sense the measured information and convert the sensed information into electric signals or other information in required form according to a certain rule to output, so as to meet the requirements of information transmission, processing, storage, display, recording, control and the like. Compared with the human 5 large sensor according to different functions, the sensor is mainly divided into a photosensitive sensor, a visual sensor, a sound sensor, an auditory sensor, a gas sensor, an olfactory sensor, a chemical sensor, a taste sensor, a pressure-sensitive sensor, a temperature-sensitive sensor and a fluid sensor, and a touch sensor.
A gas sensor is also called a gas sensor, and is an instrument for detecting gas concentration. The instrument is suitable for dangerous places with combustible or toxic gas, and can continuously detect the content of the detected gas in the air within the lower explosion limit for a long time. The device can be widely applied to various industries with combustible or toxic gas, such as gas, petrochemical industry, metallurgy, steel, coking, electric power and the like, and is an ideal monitoring instrument for ensuring property and personal safety.
The main reasons for restricting the development of gas sensors at present are: the gas sensor has the factors of low sensitivity, poor selectivity, high power consumption, complex preparation process, high price and the like, and all the factors are related to the sensitive material adopted by the gas sensor and the structure of the gas sensor. It can be said that the structure of the sensitive material and the sensor is the basis and key of the new gas sensor and even the new gas sensor technology.
Disclosure of Invention
The invention provides a gas sensor based on metal oxide nanocrystals, which comprises a substrate layer, wherein a metal oxide film layer is arranged above the substrate layer, a porous material layer is arranged above the metal oxide film layer, and a metal oxide nanocrystal layer is arranged above the porous material layer.
The metal oxide nanocrystal layer is composed of a plurality of metal oxide nanocrystals which are mutually spaced.
The metal oxide nanocrystal is in a cube shape, and the side length of the metal oxide nanocrystal is 1 nm-50 nm.
The metal oxide nanocrystal is conical, and the bottom surface of the metal oxide nanocrystal is circular with a diameter of 10 nm-50 nm.
The metal oxide nanocrystal is hemispherical, and the bottom surface of the metal oxide nanocrystal is circular with a diameter of 10 nm-50 nm.
The metal oxide nanocrystals are also filled in the pores of the porous material layer.
And a graphene layer covers the metal oxide nanocrystal layer.
The porous material layer is made of porous silicon dioxide, and the width of the holes in the porous material layer is 1 nm-50 nm.
The metal oxide film layer is iron oxide (Fe)2O3) Copper oxide (CuO), zinc oxide (ZnO), cobaltosic oxide (Co)3O4) Nickel oxide (NiO), titanium oxide (TiO)2) Molybdenum oxide (MoO)3) Tin oxide (SnO)2) One or more of the above.
The metal oxide nanocrystal layer is made of iron oxide (Fe)2O3) Copper oxide (CuO), zinc oxide (ZnO), cobaltosic oxide (Co)3O4) Nickel oxide (NiO), titanium oxide (TiO)2) Molybdenum oxide (MoO)3) Tin oxide (SnO)2) Any one of them.
The use method of the gas sensor based on the metal oxide nanocrystal comprises the following steps:
firstly, irradiating a gas sensor by using infrared rays with different wavelengths in oxygen, and measuring the surface plasmon resonance wavelength;
then, gas to be measured is introduced into the gas sensor, infrared rays with different wavelengths are applied to irradiate the gas sensor, a new resonance wavelength is measured, and the gas to be measured is judged according to the change of the resonance wavelength.
Compared with the prior art, the invention has the beneficial effects that: according to the gas sensor based on the metal oxide nanocrystalline, the metal oxide nanocrystalline layer is arranged above the porous material layer, the metal oxide thin film layer is arranged below the porous material layer, the metal oxide nanocrystalline layer is coupled with the metal oxide thin film layer, local surface plasmon resonance is generated on the metal oxide nanocrystalline layer through infrared light irradiation, a strong electric field is generated on the surface of the metal oxide nanocrystalline layer, the strong electric field is favorable for combining free electrons in the metal oxide with nearby oxygen molecules and changing the free electrons into oxygen anions, the concentration of the free electrons in the metal oxide is reduced, and further the refractive indexes of the metal oxide nanocrystalline layer and the metal oxide thin film layer to infrared light are changed; when gas to be detected contacts the sensor, gas molecules react with more oxygen anions to generate more free electrons, and the free electrons return to the metal oxide nano crystal layer and the metal oxide film layer, so that the concentration of the free electrons in the metal oxide nano crystal layer and the metal oxide film layer is increased violently, the refractive index of infrared light is changed violently, the local surface plasmon resonance wavelength is changed violently, and the detection of the gas molecules can be realized by the change of the local surface plasmon resonance wavelength; the gas sensor based on the metal oxide nanocrystal measures the change of the local surface plasmon resonance wavelength, and has the advantages of higher sensitivity and higher sensitivity compared with the resistance change of a detection sensitive element in the prior art.
The present invention will be described in further detail below with reference to the accompanying drawings.
Drawings
Fig. 1 is a schematic structural diagram of a gas sensor based on metal oxide nanocrystals.
Fig. 2 is a second structural schematic diagram of a gas sensor based on metal oxide nanocrystals.
Fig. 3 is a schematic structural diagram three of a gas sensor based on metal oxide nanocrystals.
Fig. 4 is a fourth schematic structural view of a metal oxide nanocrystal-based gas sensor.
In the figure: 1. a substrate layer; 2. a metal oxide thin film layer 2; 3. a layer of porous material; 4. a metal oxide nanocrystal layer; 5. a gap; 6. a graphene layer.
Detailed Description
To further explain the technical means and effects of the present invention adopted to achieve the intended purpose, the following detailed description of the embodiments, structural features and effects of the present invention will be made with reference to the accompanying drawings and examples.
Example 1
The invention provides a gas sensor based on metal oxide nanocrystals as shown in figures 1-4, which comprises a substrate layer 1 with supporting and protecting functions, wherein a metal oxide film layer 2 is arranged above the substrate layer 1, a porous material layer 3 is arranged on the metal oxide film layer 2, and the porous material layer 3 has an isolating function, can have a certain adsorption function on gas to be detected, and can improve the effect of the gas to be detected and the following oxygen anions; a metal oxide nanocrystalline layer 4 is arranged above the porous material layer 3; the metal oxide nanocrystal layer 4 is composed of a plurality of metal oxide nanocrystals spaced apart from each other, that is, gaps 5 are reserved among the metal oxide nanocrystals, and by arranging a metal oxide nanocrystal layer 4 above the porous material layer 3, the metal oxide thin film layer 2 is arranged below the porous material layer 3, the metal oxide nanocrystals are coupled with the metal oxide thin film layer 2, and the infrared light is irradiated, generating local surface plasmon resonance on the metal oxide nanocrystal, generating a strong electric field on the surface of the metal oxide nanocrystal, wherein the strong electric field is favorable for combining free electrons in the metal oxide with nearby oxygen molecules to become oxygen anions, the concentration of free electrons in the metal oxide is reduced, so that the refractive indexes of the metal oxide nanocrystals and the metal oxide film layer 2 to infrared light are changed; when the gas to be detected contacts the sensor, gas molecules react with more oxygen anions to generate more free electrons, and the free electrons return to the metal oxide nanocrystals and the metal oxide thin film layer 2, so that the concentration of the free electrons in the metal oxide nanocrystals and the metal oxide thin film layer 2 is increased violently, the refractive index of infrared light is changed violently, the local surface plasmon resonance wavelength is changed violently, and the detection of the gas molecules can be realized by the change of the local surface plasmon resonance wavelength.
Further, the metal oxide nanocrystal layer 4 is composed of a plurality of metal oxide nanocrystals spaced from each other, and the gaps 5 between the metal oxide nanocrystals may be the same or different.
Furthermore, the thickness of the porous material layer 3 is 0.5-10 μm, which is beneficial to coupling the metal oxide nanocrystal layer 4 and the metal oxide thin film layer 2 and forming a stronger local electric field between the two, so that the concentration of free electrons in the metal oxide (the metal oxide nanocrystal layer 4 or the metal oxide thin film layer 2) is reduced, and the refractive indexes of the metal oxide nanocrystals and the metal oxide thin film layer 2 to infrared light are changed; when the gas to be detected contacts the sensor, gas molecules react with more oxygen anions to generate more free electrons, and the free electrons return to the metal oxide nanocrystals and the metal oxide thin film layer 2, so that the concentration of the free electrons in the metal oxide nanocrystals and the metal oxide thin film layer 2 is increased dramatically, further, the refractive index of infrared light is changed dramatically, the local surface plasmon resonance wavelength is changed drastically, and the detection of the gas molecules can be realized by changing the local surface plasmon resonance wavelength. This makes the wavelength change of the surface plasmon resonance more drastic, thereby improving the sensitivity of gas detection.
Further, the metal oxide nanocrystal is in a tetragonal shape, and the side length of the metal oxide nanocrystal is 1 nm-50 nm.
Further, as shown in fig. 3, the metal oxide nanocrystal is conical, the bottom surface of the metal oxide nanocrystal is circular with a diameter of 10nm to 50nm, and the conical shape enhances the aggregation effect on the incident infrared rays, so that stronger surface plasmon resonance is generated, which is beneficial to improving the coupling degree between the metal oxide nanocrystal layer 4 and the metal oxide thin film layer 2, and a stronger local electric field is formed between the metal oxide nanocrystal layer 4 and the metal oxide thin film layer 2, so that the concentration of free electrons in the metal oxide (the metal oxide nanocrystal layer 4 or the metal oxide thin film layer 2) can be reduced, more oxygen anions are generated, and the refractive indexes of the metal oxide nanocrystal and the metal oxide thin film layer 2 to the infrared rays are changed; when the gas to be detected contacts the sensor, gas molecules react with more oxygen anions to generate more free electrons, and the free electrons return to the metal oxide nanocrystals and the metal oxide thin film layer 2, so that the concentration of the free electrons in the metal oxide nanocrystals and the metal oxide thin film layer 2 is increased dramatically, further, the refractive index of infrared light is changed dramatically, the local surface plasmon resonance wavelength is changed drastically, and the detection of the gas molecules can be realized by changing the local surface plasmon resonance wavelength. This makes the wavelength change of the surface plasmon resonance more drastic, thereby improving the sensitivity of gas detection.
Further, as shown in fig. 4, the metal oxide nanocrystal has a hemispherical shape, and the bottom surface of the metal oxide nanocrystal has a circular shape with a diameter of 10nm to 50 nm. The hemispherical shape also has the function of enhancing the aggregation of incident infrared rays, so that stronger surface plasmon resonance is generated, the coupling degree of the metal oxide nanocrystal layer 4 and the metal oxide thin film layer 2 is favorably improved, a stronger local electric field is formed between the metal oxide nanocrystal layer and the metal oxide thin film layer, the local electric field is stronger, the concentration of free electrons in the metal oxide is reduced, more oxygen anions are generated, and the refractive indexes of the metal oxide nanocrystal and the metal oxide thin film layer 2 to infrared rays are changed; when the gas to be detected contacts the sensor, gas molecules react with more oxygen anions to generate more free electrons, and the free electrons return to the metal oxide nanocrystals and the metal oxide thin film layer 2, so that the concentration of the free electrons in the metal oxide nanocrystals and the metal oxide thin film layer 2 is increased dramatically, further, the refractive index of infrared light is changed dramatically, the local surface plasmon resonance wavelength is changed drastically, and the detection of the gas molecules can be realized by changing the local surface plasmon resonance wavelength. This makes the wavelength change of the surface plasmon resonance more drastic, thereby improving the sensitivity of gas detection.
Furthermore, the metal oxide nanocrystals are also filled in the holes of the porous material layer 3, so that the gas to be detected can be prevented from forming airflow, the metal oxide nanocrystals fall off, and permanent damage is caused to the gas sensor.
Further, as shown in fig. 2, a graphene layer 6 covers the metal oxide nanocrystal layer 4, and the graphene layer 6 can prevent incident infrared rays from being scattered by the metal oxide nanocrystal layer 4 below, so as to improve the utilization rate of the incident infrared rays, so that more surface plasmon resonances are generated between the infrared rays and the metal oxide nanocrystal layer 4, and the metal oxide layer is favorable for generating more oxygen anions, which makes the increase and decrease of free electrons inside the metal oxide nanocrystal and the metal oxide thin film layer 2 more obvious and more intense, so that the concentration of free electrons in the metal oxide nanocrystal and the metal oxide thin film layer 2 of the metal oxide nanocrystal-based gas sensor is dramatically increased, the refractive index of infrared light is drastically changed, and the wavelength of local surface plasmon resonances is drastically changed, the sensitivity of gas detection is improved; on the other hand, graphene layer 6 can increase the adsorption capacity of the gas to be detected, so that the gas to be detected can act with more oxygen anions, the wavelength of the surface plasmon resonance is changed more violently, and the effect of improving the gas detection sensitivity is achieved.
Finally, it should be noted that the graphene layer 6 may be a monolithic graphene film, or may be formed by combining a plurality of graphene fragments.
Further, the porous material layer 3 is made of porous silica, and the width of the holes on the porous material layer 3 is 1nm to 50 nm.
Further, the metal oxide thin film layer 3 is iron oxide Fe2O3Copper oxide CuO, zinc oxide ZnO, cobaltosic oxide Co3O4NiO, TiO2) Molybdenum oxide (MoO)3) Tin oxide (SnO)2) One or more of the above.
Further, the metal oxide nanocrystal layer 4 is made of iron oxide Fe2O3Copper oxide CuO, zinc oxide ZnO, cobaltosic oxide Co3O4NiO, TiO2) Molybdenum oxide (MoO)3) Tin oxide (SnO)2) Any one of them.
Further, the substrate layer 1 may be made of a material with stable structure and good insulation, such as silicon dioxide.
Further, the use method of the gas sensor based on the metal oxide nanocrystal comprises the following steps:
firstly, irradiating a gas sensor by using infrared rays with different wavelengths in oxygen, and measuring the surface plasmon resonance wavelength;
then, gas to be measured is introduced into the gas sensor, infrared rays with different wavelengths are applied to irradiate the gas sensor, a new resonance wavelength is measured, and the gas to be measured is judged according to the change of the resonance wavelength.
To sum up, the gas sensor based on the metal oxide nanocrystal couples the metal oxide nanocrystal layer 4 with the metal oxide thin film layer 2, and through irradiation of infrared light, local surface plasmon resonance is generated on the metal oxide nanocrystal layer 4, and a strong electric field is generated on the surface of the metal oxide nanocrystal layer 4, and the strong electric field is favorable for combining free electrons inside the metal oxide (the metal oxide nanocrystal layer 4 and the metal oxide thin film layer 2) with oxygen molecules nearby to become oxygen anions, so that the concentration of the free electrons inside the metal oxide is reduced, and the refractive indexes of the metal oxide nanocrystal layer 4 and the metal oxide thin film layer 2 to the infrared light are changed; when the gas to be detected contacts the sensor, gas molecules react with more oxygen anions to generate more free electrons, and the free electrons return to the metal oxide nano crystal layer 4 and the metal oxide film layer 2, so that the concentration of the free electrons in the metal oxide nano crystal layer 4 and the metal oxide film layer 2 is increased violently, the refractive index of infrared light is changed violently, the local surface plasmon resonance wavelength is changed violently, and the detection of the gas molecules can be realized by the change of the local surface plasmon resonance wavelength; in a word, the gas sensor based on the metal oxide nanocrystal measures the change of the local surface plasmon resonance wavelength, and has the advantages of higher sensitivity compared with the detection of the resistance change of the sensitive element in the prior art.
The foregoing is a more detailed description of the invention in connection with specific preferred embodiments and it is not intended that the invention be limited to these specific details. For those skilled in the art to which the invention pertains, several simple deductions or substitutions can be made without departing from the spirit of the invention, and all shall be considered as belonging to the protection scope of the invention.
Claims (10)
1. A metal oxide nanocrystal-based gas sensor, characterized by: the metal oxide nano-crystalline silicon substrate is characterized by comprising a substrate layer (1), wherein a metal oxide thin film layer (2) is arranged above the substrate layer (1), a porous material layer (3) is arranged above the metal oxide thin film layer (2), and a metal oxide nano-crystalline layer (4) is arranged above the porous material layer (3).
2. The metal oxide nanocrystal-based gas sensor of claim 1, wherein: the metal oxide nanocrystal layer (4) is composed of a plurality of metal oxide nanocrystals which are mutually spaced.
3. A metal oxide nanocrystal-based gas sensor as in claim 2, wherein: the metal oxide nanocrystal is in a cube shape, and the side length of the metal oxide nanocrystal is 1 nm-50 nm.
4. A metal oxide nanocrystal-based gas sensor as in claim 2, wherein: the metal oxide nanocrystal is conical, and the bottom surface of the metal oxide nanocrystal is circular with a diameter of 10 nm-50 nm.
5. A metal oxide nanocrystal-based gas sensor as in claim 2, wherein: the metal oxide nanocrystal is hemispherical, and the bottom surface of the metal oxide nanocrystal is circular with a diameter of 10 nm-50 nm.
6. A metal oxide nanocrystal-based gas sensor as in claim 2, wherein: the metal oxide nanocrystals are also filled in the pores of the porous material layer (3).
7. The metal oxide nanocrystal-based gas sensor of claim 1, wherein: and a graphene layer (6) is covered above the metal oxide nanocrystal layer (4).
8. The metal oxide nanocrystal-based gas sensor of claim 1, wherein: the porous material layer (3) is made of porous silicon dioxide, and the width of the holes in the porous material layer (3) is 1 nm-50 nm.
9. The metal oxide nanocrystal-based gas sensor of claim 1, wherein: the metal oxide film layer (3) is iron oxide (Fe)2O3) Copper oxide (CuO), zinc oxide (ZnO), cobaltosic oxide (Co)3O4) Nickel oxide (NiO), titanium oxide (TiO)2) Molybdenum oxide (MoO)3) Tin oxide (SnO)2) One or more of the above.
10. The method of using a metal oxide nanocrystal-based gas sensor of claim 1, wherein: the method comprises the following steps:
firstly, irradiating a gas sensor by using infrared rays with different wavelengths in oxygen, and measuring the surface plasmon resonance wavelength;
then, gas to be measured is introduced into the gas sensor, infrared rays with different wavelengths are applied to irradiate the gas sensor, a new resonance wavelength is measured, and the gas to be measured is judged according to the change of the resonance wavelength.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112326735A (en) * | 2020-10-14 | 2021-02-05 | 滕州创感电子科技有限公司 | Preparation method of room-temperature semiconductor gas sensing material and sensor |
| CN113280840A (en) * | 2021-05-13 | 2021-08-20 | 桂林电子科技大学 | Plasma optical sensor based on gold nano rectangular pyramid structure polarization correlation |
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