CN111257599A - Near-field optical characterization method for charge transfer between heterojunction layers - Google Patents
Near-field optical characterization method for charge transfer between heterojunction layers Download PDFInfo
- Publication number
- CN111257599A CN111257599A CN201911279865.5A CN201911279865A CN111257599A CN 111257599 A CN111257599 A CN 111257599A CN 201911279865 A CN201911279865 A CN 201911279865A CN 111257599 A CN111257599 A CN 111257599A
- Authority
- CN
- China
- Prior art keywords
- tmd
- heterojunction
- thin film
- graphene
- film layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000012546 transfer Methods 0.000 title claims abstract description 43
- 230000003287 optical effect Effects 0.000 title claims abstract description 39
- 238000012512 characterization method Methods 0.000 title claims abstract description 28
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 60
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 60
- 239000010409 thin film Substances 0.000 claims abstract description 49
- 238000000034 method Methods 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 239000000463 material Substances 0.000 claims description 28
- 230000008569 process Effects 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052961 molybdenite Inorganic materials 0.000 claims description 5
- 229910052982 molybdenum disulfide Inorganic materials 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- 238000000231 atomic layer deposition Methods 0.000 claims description 3
- 229910001632 barium fluoride Inorganic materials 0.000 claims description 3
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 claims description 3
- 229910001634 calcium fluoride Inorganic materials 0.000 claims description 3
- 229910052681 coesite Inorganic materials 0.000 claims description 3
- 229910052906 cristobalite Inorganic materials 0.000 claims description 3
- 238000005566 electron beam evaporation Methods 0.000 claims description 3
- 229910001635 magnesium fluoride Inorganic materials 0.000 claims description 3
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052682 stishovite Inorganic materials 0.000 claims description 3
- 238000002207 thermal evaporation Methods 0.000 claims description 3
- 229910052905 tridymite Inorganic materials 0.000 claims description 3
- 239000010410 layer Substances 0.000 abstract description 77
- 239000011229 interlayer Substances 0.000 abstract description 14
- 238000001898 apertureless near-field scanning optical microscopy Methods 0.000 abstract description 10
- 230000000694 effects Effects 0.000 abstract description 7
- 238000003384 imaging method Methods 0.000 abstract description 6
- 230000005055 memory storage Effects 0.000 abstract description 3
- 229910052723 transition metal Inorganic materials 0.000 abstract description 2
- 150000003624 transition metals Chemical class 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- -1 graphite alkene Chemical class 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000008034 disappearance Effects 0.000 description 2
- 238000003491 array Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000013032 photocatalytic reaction Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000005676 thermoelectric effect Effects 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
- G01Q60/00—Particular types of SPM [Scanning Probe Microscopy] or microscopes; Essential components thereof
- G01Q60/18—SNOM [Scanning Near-Field Optical Microscopy] or apparatus therefor, e.g. SNOM probes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN heterojunction type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1892—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates
- H01L31/1896—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates for thin-film semiconductors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
- Radiology & Medical Imaging (AREA)
- Health & Medical Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Carbon And Carbon Compounds (AREA)
Abstract
The invention provides a near-field optical characterization method for charge transfer between heterojunction layers, which can directly observe optical images before and after charge transfer in real space, wherein a required observation device substrate is used as a grid electrode, a dielectric layer is deposited on the substrate, a Transition Metal Dichalcogenide (TMD) thin film layer (TMD for short) covers the dielectric layer, and a graphene thin film layer covers the TMD thin film layer to form a graphene/TMD heterojunction. The characterization instrument with which the method is based is a scattering near-field optical microscope. According to the invention, after the heterojunction is well stacked and prepared, interlayer charges are stable, and the transfer is difficult to observe, the visible light means is used for exciting photoelectrons generated in TMD, so that the photoelectrons are transferred in the heterojunction, the s-SNOM device is combined for carrying out real space characterization on the graphene/TMD heterojunction, and finally, the effect of photo-generated charge transfer between the heterojunction can be observed in a real space imaging mode, and the method is applied to optical waveguide devices, photoelectric detectors, optical memory storage devices and the like.
Description
Technical Field
The invention belongs to the technical field of near-field optics, and particularly relates to a near-field optical characterization method for charge transfer between heterojunction layers.
Background
Near-field optical technology has recently become an important means for studying the interaction process of light and substances, and can realize the characterization of material properties under high-spatial-resolution imaging, such as the study of in-situ photocatalytic reaction active site properties, the energy band of new materials and various polariton properties. In recent years, in the study of polaritons, electron plasmons of metallic materials (such as graphene), exciton polaritons of semiconductive materials (such as TMD materials), and phonon polaritons of insulating materials (such as h-BN) have been mainly addressed. Various polariton signals can be imaged in real space to obtain clear interference fringe images, and the high-local-area electromagnetic images can be used as a potential means for detecting molecules and even interlayer charge transfer.
Graphene is a two-dimensional crystal composed of a single layer of carbon atoms, and graphites of ten layers or less are all considered to be graphene. Has excellent electrical and optical characteristics and the like, and has great application potential in the fields of photoelectric devices and photonic integrated circuits. The existing graphene can support a plasmon polariton polarized wave mode, which is formed by coupling incident photons in a free space and electrons on the graphene. The graphene plasmons can bind light in space on a nanoscale, so that a high-local electromagnetic waveguide mode is realized, and a photonic integrated circuit with a smaller size can be realized. In addition, the graphene-based photoelectric sensor not only has the advantages of wide detection spectrum range, high responsivity, high speed and low noise, but also is easily compatible with the existing silicon-based CMOS integrated circuit process, and realizes the production of large-scale and low-cost sensor arrays. To date, research on graphene-based photodetectors has focused on how to improve the light absorption of graphene. For example, a thermoelectric effect, a metal exciton structure, a graphene exciton, a microcavity structure, or the like is used.
TMD material is a novel two-dimensional material with semiconducting properties. The different thicknesses of TMD materials determine the different band structures of the materials, and in recent years much interest has been focused on single layer TMD materials, such as typical MoS2A material. Single layer MoS2Is a light sensitive material with direct bandgap semiconductor properties, and the bandgap is about 1.8eV (680 nm). Therefore, the optical waveguide has very good response to visible light, and can be used for optical waveguide devices, photoelectric detectors, optical memory storage devices and the like.
The graphene/TMD heterojunction is obtained by growing or mechanically stripping by means of chemical vapor deposition, and then transferring, so that a material foundation is laid for realizing a smaller-scale nano integrated circuit and a nano integrated photonic circuit in the future. However, interlayer charge transfer in heterojunctions affects signal modulation and transmission in nano-integrated photonic circuits, and observing interlayer charge transfer in real space remains a significant challenge. Therefore, a near-field optical characterization method for charge transfer between heterojunction layers is invented.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provide a near-field optical characterization method for charge transfer between heterojunction layers.
In order to solve the technical problems, the invention adopts the technical scheme that: a near-field optical characterization method for heterojunction interlayer charge transfer, the method comprising the steps of: step a, preparing an observation device with a heterojunction: a1, selecting silicon with a proper size as a substrate, and preparing a dielectric layer on the substrate by methods such as electron beam evaporation, thermal evaporation, magnetron sputtering, atomic layer deposition or molecular beam epitaxial growth; a2, obtaining a TMD thin film layer and a graphene thin film layer by a standard mechanical stripping process or a chemical vapor deposition method; transferring the peeled TMD thin film layer onto the dielectric layer, and transferring the peeled graphene thin film layer onto the TMD thin film layer; and a step a3, forming a graphene/TMD heterojunction between the TMD thin film layer and the graphene thin film layer.
B, performing near-field optical characterization on the charge transfer between the graphene/TMD heterojunction by using a scattering type near-field optical microscope: placing a metal needle point with the curvature radius of 10 nm-20 nm on the graphene/TMD heterojunction, focusing incident far-field light on the needle point, and performing near-field optical characterization on charge transfer between the graphene/TMD heterojunction.
Preferably, the spatial resolution of the scattering type near-field optical microscope is 20 nm.
The invention provides an observation device with a heterojunction, which is sequentially provided with a substrate, a dielectric layer, a TMD thin film layer and a graphene thin film layer from bottom to top; the graphene thin film layer covers the TMD thin film layer to form a graphene/TMD heterojunction.
Preferably, the dielectric layer is MgF2、CaF2、BaF2No infrared phonon or SiO2A phononic material; the TMD thin film layer is a TMD material with a band gap in a visible light wave band, such as but not limited to MoS2、WS2And MoSe2. Preferably, the thickness of the dielectric layer is 10nm to 3000 m.
Compared with the prior art, the invention has the beneficial effects that:
in the invention, the development of miniaturization of the optical device lays a foundation for a future photonic integrated circuit, the vertical heterojunction formed by the two-dimensional material greatly reduces the space size of the device, and the miniaturized device with higher density is realized. However, since the interlayer charge transfer in the heterojunction affects the performance of the photonic integrated circuit, how to efficiently observe the phenomenon of the interlayer transfer of electrons in real space is very important. In the invention, a characterization method for observing the transfer near field of electrons between layers in real space by observing the change of a polariton image is designed, which mainly utilizes visible light to generate photoelectrons in a TMD material layer, so that charge imbalance can be generated on a heterojunction and further transferred, and the Fermi energy in the transferred graphene can be obviously changed, therefore, the graphene plasmon polariton ripple image can be correspondingly obviously changed and characterized by a scattering near field optical microscope (s-SNOM). Therefore, the method can realize the characterization of the graphene plasmon image by combining the s-SNOM under the irradiation of visible light, and visually observe the effect of real space imaging before and after interlayer charge transfer.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the invention, as claimed.
Drawings
Further objects, features and advantages of the present invention will become apparent from the following description of embodiments of the invention, with reference to the accompanying drawings, in which:
FIG. 1 schematically illustrates a front view in longitudinal section of the present invention with a graphene/TMD heterojunction;
FIG. 2 schematically illustrates a flow chart of a method of fabricating a near field optical characterization device for heterojunction interlayer charge transfer according to the present invention;
FIG. 3 schematically illustrates a working diagram of the near-field optical characterization method for charge transfer between heterojunction layers according to the present invention;
FIG. 4 schematically shows a spectral performance demonstration scheme for charge transfer between heterojunction layers according to the invention;
fig. 5 schematically shows an experimental demonstration of the near-field optical characterization method for charge transfer between heterojunction layers of the present invention.
In the figure:
1. substrate 2, dielectric layer
3. TMD thin film layer 4 and graphene thin film layer
Detailed Description
The objects and functions of the present invention and methods for accomplishing the same will be apparent by reference to the exemplary embodiments. However, the present invention is not limited to the exemplary embodiments disclosed below; it can be implemented in different forms. The nature of the description is merely to assist those skilled in the relevant art in a comprehensive understanding of the specific details of the invention.
Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. In the drawings, the same reference numerals denote the same or similar parts, or the same or similar steps.
FIG. 1 is a front view in longitudinal section of a device of the present invention having a graphene/TMD heterojunction; substrate 1, dielectric layer 2, TMD thin film layer 3 and the graphite alkene thin film layer 4 that set gradually from bottom to top, dielectric layer 2 deposit on substrate 1, and TMD thin film layer 3 covers on dielectric layer 2, and graphite alkene thin film layer 4 covers and forms graphite alkene/TMD heterojunction on TMD thin film layer 3.
TMD materials include a wide range of TMD materials, here utilizing a band gap in the visible band, such as but not limited to MoS2、WS2And MoSe2iso-TMD materials; the material of the substrate 1 is Si for supporting; the dielectric layer 2 is made of insulating dielectric material, and the thickness range of the dielectric layer is 10 nmm-3000 nm; the material of the dielectric layer 2 is MgF2，CaF2，BaF2Equal phonon-free material or SiO2Phononic materials.
The TMD thin film layer 3 and the graphene thin film layer 4 are stacked in any manner, not limited to stacking in an up-down order, and not limited to stacking at any angle.
Fig. 2 is a flowchart of a method for manufacturing the all-optical modulation graphene plasmon device.
The method comprises the following steps: (1) manufacturing a dielectric layer 2: preparing a dielectric layer 2 on a substrate by using methods such as electron beam evaporation, thermal evaporation, magnetron sputtering, atomic layer deposition or molecular beam epitaxial growth, wherein the substrate 1 is made of silicon;
(2) preparing a TMD thin film layer 3 and a graphene thin film layer 4: obtaining a TMD thin film layer 3 and a graphene thin film layer 4 by a standard mechanical stripping process or a chemical vapor deposition method;
(3) transfer of TMD film layer 3: transferring the peeled TMD thin film layer 3 onto the dielectric layer 2 prepared above;
(4) transferring the graphene film layer 4: transferring the peeled graphene film layer 4 to the prepared TMD film layer 3;
(5) preparing a graphene/TMD heterojunction: the graphene thin film layer 4, which is later transferred onto the TMD thin film layer 3, forms a graphene/TMD vertical heterojunction.
Fig. 3 is an operation principle of the near-field optical characterization method for charge transfer between heterojunction layers of the present invention. Designs that promote TMD materials (MoS) by periodically turning on visible light2) The charge transfer occurs when photo-generated electrons are further transferred to graphene, the Fermi energy of the photo-generated electrons is reduced by compounding with graphene holes, the disappearance of plasmon signals, namely the effect of the charge transfer correspondingly occurs, is observed through scanning of a near field s-SNOM, and the effect can be observed through real space imaging.
Fig. 4 is a spectral performance representation of the present invention for charge transfer between heterojunction layers. The charge transfer occurring in the heterojunction is indirectly verified by the weakening effect on the PL spectral intensity of the heterojunction region.
Fig. 5 is an experimental demonstration of the near-field optical characterization method for charge transfer between heterojunction layers of the present invention. Fig. 5 is a near field image of a heterojunction region observed in real space, a in a dark field environment and b after the corresponding visible laser is turned on. And in the design of a-b switching, interlayer charge transfer of photoelectrons on the heterojunction can occur, and a plasmon signal on the graphene is further characterized by means of a near field s-SNOM. The disappearance process of the plasmon signal actually corresponds to that after the charge is transferred, the Fermi energy of the graphene is reduced, so that the intensity of the plasmon signal is sharply reduced and even disappears as shown in FIG. 5 c. Therefore, the real space effect of charge transfer can be directly observed by representing plasmon fringe information through the near field s-SNOM.
The invention provides a near-field optical characterization method for charge transfer between heterojunction layers, which can directly observe optical images before and after charge transfer in real space, wherein an observation device required by the method is sequentially provided with a substrate 1, a dielectric layer 2, a transition metal dichalcogenide thin film (TMD thin film layer 3) and a graphene thin film layer 4 from bottom to top; the substrate 1 is used as a grid electrode, the dielectric layer 2 is deposited on the substrate 1, the TMD thin film layer 3 covers the dielectric layer 2, and the graphene thin film layer 4 covers the TMD thin film layer 3 to form a graphene/TMD heterojunction. The method relies on the characterization of the instrument by means of a scattering near-field optical microscope (s-SNOM). According to the invention, after the heterojunction is well stacked and prepared, interlayer charges are stable, and the transfer is difficult to observe, the visible light means is used for exciting photoelectrons generated in TMD, so that the photoelectrons are transferred in the heterojunction, the s-SNOM device is combined for carrying out real space characterization on the graphene/TMD heterojunction, and finally, the effect of photo-generated charge transfer between the heterojunction can be observed in a real space imaging mode, so that the method can be applied to optical waveguide devices, photoelectric detectors, optical memory storage devices and the like.
The invention has the beneficial effects that: in the invention, the development of miniaturization of the optical device lays a foundation for a future photonic integrated circuit, the vertical heterojunction formed by the two-dimensional material greatly reduces the space size of the device, and the miniaturized device with higher density is realized. However, since the interlayer charge transfer in the heterojunction affects the performance of the photonic integrated circuit, how to efficiently observe the phenomenon of the interlayer transfer of electrons in real space is very important. In the invention, a characterization method for observing the transfer near field of electrons between layers in real space by observing the change of a polariton image is designed, which mainly utilizes visible light to generate photoelectrons in a TMD material layer, so that charge imbalance can be generated on a heterojunction and further transferred, and the Fermi energy in the transferred graphene can be obviously changed, therefore, the graphene plasmon polariton ripple image can be correspondingly obviously changed and characterized by a scattering near field optical microscope (s-SNOM). Therefore, the method can realize the characterization of the graphene plasmon image by combining the s-SNOM under the irradiation of visible light, and visually observe the effect of real space imaging before and after interlayer charge transfer.
Other embodiments of the invention will be apparent to those skilled in the art from consideration of the specification and practice of the invention disclosed herein. It is intended that the specification and examples be considered as exemplary only, with a true scope and spirit of the invention being indicated by the following claims.
Claims (5)
1. A method of near-field optical characterization for charge transfer between heterojunction layers, the method comprising the steps of:
step a, preparing an observation device with a heterojunction:
a1, selecting silicon with a proper size as a substrate, and preparing a dielectric layer on the substrate by methods such as electron beam evaporation, thermal evaporation, magnetron sputtering, atomic layer deposition or molecular beam epitaxial growth; a2, obtaining a TMD thin film layer and a graphene thin film layer by a standard mechanical stripping process or a chemical vapor deposition method; transferring the peeled TMD thin film layer onto the dielectric layer, and transferring the peeled graphene thin film layer onto the TMD thin film layer; a3, forming a graphene/TMD heterojunction between the TMD thin film layer and the graphene thin film layer;
b, performing near-field optical characterization on the charge transfer between the graphene/TMD heterojunction by using a scattering type near-field optical microscope:
placing a metal needle point with the curvature radius of 10 nm-20 nm on the graphene/TMD heterojunction, focusing incident far-field light on the needle point, and performing near-field optical characterization on charge transfer between the graphene/TMD heterojunction.
2. The characterization method according to claim 1, wherein the spatial resolution of the scattering near field optical microscope is 20 nm.
3. The observation device with the heterojunction is characterized in that a substrate, a dielectric layer, a TMD thin film layer and a graphene thin film layer are sequentially arranged from bottom to top;
the graphene thin film layer covers the TMD thin film layer to form a graphene/TMD heterojunction.
4. The observation device of claim 3, wherein the substrate is a silicon wafer; the dielectric layer is MgF2、CaF2、BaF2No infrared phonon or SiO2A phononic material; the TMD thin film layer is a TMD material with a band gap in a visible light wave band, such as but not limited to MoS2、WS2And MoSe2。
5. Observation device according to claim 3, characterized in that said dielectric layer has a thickness comprised between 10 and 3000 nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911279865.5A CN111257599B (en) | 2019-12-13 | 2019-12-13 | Near-field optical characterization method for charge transfer between heterojunction layers |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911279865.5A CN111257599B (en) | 2019-12-13 | 2019-12-13 | Near-field optical characterization method for charge transfer between heterojunction layers |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111257599A true CN111257599A (en) | 2020-06-09 |
| CN111257599B CN111257599B (en) | 2022-04-26 |
Family
ID=70948810
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201911279865.5A Active CN111257599B (en) | 2019-12-13 | 2019-12-13 | Near-field optical characterization method for charge transfer between heterojunction layers |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111257599B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114594097A (en) * | 2022-03-07 | 2022-06-07 | 南京大学 | Method for representing two-dimensional polariton real space characteristics |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102353817A (en) * | 2011-06-30 | 2012-02-15 | 中国科学院苏州纳米技术与纳米仿生研究所 | Probe of conducting atomic force microscope and measuring methods employing probe |
| US20170170260A1 (en) * | 2015-12-10 | 2017-06-15 | Massachusetts Institute Of Technology | Universal Methodology to Synthesize Diverse Two-Dimensional Heterostructures |
| CN107481924A (en) * | 2017-07-16 | 2017-12-15 | 北京工业大学 | A kind of preparation method of the lateral hetero-junctions of thin graphene/molybdenum disulfide |
| CN107561028A (en) * | 2017-06-30 | 2018-01-09 | 国家纳米科学中心 | For strengthening the metallic graphite carbon alkene phasmon device and preparation method of infrared spectrum detection |
| CN108548807A (en) * | 2018-03-15 | 2018-09-18 | 国家纳米科学中心 | Graphene phasmon device and preparation method thereof for enhanced highpass filtering signal |
| CN109407210A (en) * | 2018-11-12 | 2019-03-01 | 国家纳米科学中心 | A kind of polarized wave waveguide transmission coupling device and preparation method based on hetero-junctions in face |
| CN109817808A (en) * | 2019-01-11 | 2019-05-28 | 电子科技大学 | A kind of Van der Waals heterojunction type photoelectric detector and preparation method |
| CN110098267A (en) * | 2019-04-09 | 2019-08-06 | 深圳激子科技有限公司 | A kind of graphene mid-infrared light detector and preparation method thereof based on the enhancing of phonon excimer |
-
2019
- 2019-12-13 CN CN201911279865.5A patent/CN111257599B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102353817A (en) * | 2011-06-30 | 2012-02-15 | 中国科学院苏州纳米技术与纳米仿生研究所 | Probe of conducting atomic force microscope and measuring methods employing probe |
| US20170170260A1 (en) * | 2015-12-10 | 2017-06-15 | Massachusetts Institute Of Technology | Universal Methodology to Synthesize Diverse Two-Dimensional Heterostructures |
| CN107561028A (en) * | 2017-06-30 | 2018-01-09 | 国家纳米科学中心 | For strengthening the metallic graphite carbon alkene phasmon device and preparation method of infrared spectrum detection |
| CN107481924A (en) * | 2017-07-16 | 2017-12-15 | 北京工业大学 | A kind of preparation method of the lateral hetero-junctions of thin graphene/molybdenum disulfide |
| CN108548807A (en) * | 2018-03-15 | 2018-09-18 | 国家纳米科学中心 | Graphene phasmon device and preparation method thereof for enhanced highpass filtering signal |
| CN109407210A (en) * | 2018-11-12 | 2019-03-01 | 国家纳米科学中心 | A kind of polarized wave waveguide transmission coupling device and preparation method based on hetero-junctions in face |
| CN109817808A (en) * | 2019-01-11 | 2019-05-28 | 电子科技大学 | A kind of Van der Waals heterojunction type photoelectric detector and preparation method |
| CN110098267A (en) * | 2019-04-09 | 2019-08-06 | 深圳激子科技有限公司 | A kind of graphene mid-infrared light detector and preparation method thereof based on the enhancing of phonon excimer |
Non-Patent Citations (1)
| Title |
|---|
| 申亮亮等: "Graphene/MoS2异质结的能带结构研究", 《电子显微学报》 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114594097A (en) * | 2022-03-07 | 2022-06-07 | 南京大学 | Method for representing two-dimensional polariton real space characteristics |
Also Published As
| Publication number | Publication date |
|---|---|
| CN111257599B (en) | 2022-04-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Tong et al. | Sensitive and ultrabroadband phototransistor based on two‐dimensional Bi2O2Se nanosheets | |
| Wang et al. | Broadband photodetectors based on 2D group IVA metal chalcogenides semiconductors | |
| Cheng et al. | 2D material‐based photodetectors for infrared imaging | |
| Li et al. | Patterning of Wafer‐Scale MXene Films for High‐Performance Image Sensor Arrays | |
| Zhou et al. | UV–Vis-NIR photodetector based on monolayer MoS2 | |
| Yang et al. | Controllable growth of type‐II Dirac semimetal PtTe2 atomic layer on Au substrate for sensitive room temperature terahertz photodetection | |
| CN110416235B (en) | Two-dimensional material composite multicolor infrared detection chip with hollow surface plasmon structure | |
| Qin et al. | Planar graphene-C60-graphene heterostructures for sensitive UV-Visible photodetection | |
| Lu et al. | Promoting the performance of 2D material photodetectors by dielectric engineering | |
| Cao et al. | Double-layer heterostructure of graphene/carbon nanotube films for highly efficient broadband photodetector | |
| Yao et al. | Van der Waals heterostructures based on 2D layered materials: Fabrication, characterization, and application in photodetection | |
| Chen et al. | An Ultrahigh‐Contrast Violet Phosphorus Van der Waals Phototransistor | |
| Yan et al. | A ferroelectric p–i–n heterostructure for highly enhanced short‐circuit current density and self‐powered photodetection | |
| Qiao et al. | Ultrasensitive Near‐Infrared MoTe2 Photodetectors with Monolithically Integrated Fresnel Zone Plate Metalens | |
| Chen et al. | Large-scale m-GeS2 grown on GaN for self-powered ultrafast UV photodetection | |
| Dong et al. | Wafer‐scale patterned growth of type‐II Dirac semimetal platinum ditelluride for sensitive room‐temperature terahertz photodetection | |
| Zhang et al. | Fabrication of MAPbI3 perovskite/Si heterojunction photodetector arrays for image sensing application | |
| Chen et al. | Wafer‐scale growth of vertical‐structured SnSe2 nanosheets for highly sensitive, fast‐response UV–Vis–NIR broadband photodetectors | |
| CN111257599B (en) | Near-field optical characterization method for charge transfer between heterojunction layers | |
| Shang et al. | Light‐Induced Electric Field Enhanced Self‐Powered Photodetector Based on Van der Waals Heterojunctions | |
| He et al. | Resonant nanocavity-enhanced graphene photodetectors on reflecting silicon-on-insulator wafers | |
| Han et al. | Vertical heterojunction photodetector with self-powered broadband response and high performance | |
| Peyyety et al. | Tailoring Spectrally Flat Infrared Photodetection with Thickness-Controlled Nanocrystalline Graphite | |
| Basalaeva et al. | Resonance reflection of light by ordered silicon nanopillar arrays with the vertical pn junction | |
| Han et al. | Transparent and reusable nanostencil lithography for organic–inorganic hybrid perovskite nanodevices |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |