CN111244300A - Quantum dot light-emitting diode and preparation method thereof - Google Patents
Quantum dot light-emitting diode and preparation method thereof Download PDFInfo
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- CN111244300A CN111244300A CN201811442964.6A CN201811442964A CN111244300A CN 111244300 A CN111244300 A CN 111244300A CN 201811442964 A CN201811442964 A CN 201811442964A CN 111244300 A CN111244300 A CN 111244300A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/15—Hole transporting layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
Abstract
The invention belongs to the technical field of display, and particularly relates to a quantum dot light-emitting diode and a preparation method thereof. The quantum dot light-emitting diode comprises an anode, a cathode and a quantum dot light-emitting layer arranged between the anode and the cathode, wherein a hole transport layer is arranged between the quantum dot light-emitting layer and the anode, and an ionic liquid material layer is arranged on the surface, close to the quantum dot light-emitting layer, of the hole transport layer. The ionic liquid material layer in the device not only improves the luminous performance of the device, but also improves the designability and the service life of the device.
Description
Technical Field
The invention belongs to the technical field of display, and particularly relates to a quantum dot light-emitting diode and a preparation method thereof.
Background
Quantum dot light-emitting diodes (QLEDs) are an emerging display device, and the principle and structure of the QLEDs are similar to Organic light-emitting diodes (OLEDs): namely a flat panel display device which is driven by an external direct current electric field, excitons of the quantum dots and the organic/inorganic semiconductor emit light in a combined manner. Compared with OLED and QLED, the quantum dot prepared by colloid method is used as the luminescent material. The unique quantum size effect, macroscopic quantum tunneling effect, quantum size effect and surface effect of quantum dots enable the quantum dots to exhibit excellent physical properties, especially excellent optical performance. Compared with organic fluorescent dyes, the colloidal quantum dots have the advantages of adjustable spectrum, high luminous intensity, high color purity, capability of exciting multicolor fluorescence by a single light source and the like, are expected to become next-generation flat panel displays, and have wide development prospects.
In the QLED device, the quantum dots and the metal nanoparticle transmission layer material commonly used in the device are generally prepared by a solution method, so the suitable process for the industrialization of the QLED in the industry is generally considered as an ink-jet printing method in the solution method, the preparation process is simple, the material utilization rate is low, the preparation efficiency is high, and the QLED device is considered as a new technology with great potential for future flat panel display. Although the QLED has many advantages compared with the OLED, because QD and part of the transport layer material are nanoparticles in solution phase, compared with the mature evaporation process of the OLED film layer, the film forming performance is not easy to control, and the film layer problems such as incomplete coverage or "pinholes" are likely to occur, which not only may cause leakage current to the device and reduce the light emitting performance of the device, but also most importantly, the defect regions may greatly affect the lifetime of the device. According to the research progress in the industry, the device efficiency of the QLED reaches the marketization level, but the problem of short device lifetime is the biggest bottleneck restricting the commercialization of the QLED, and the problem is also the key breakthrough point which is consistently and strively solved in the industry. At present, the service life of the device is improved by improving a packaging method, introducing an insulating polymer modification layer into an ETL/Cathodode interface and the like, but the improvement effect is not obvious, and the introduction of the insulating polymer layer can reduce the mobility of carriers instead, so that the balance of the carriers and the improvement of the service life are obtained on the basis of sacrificing part of the device performance, and the methods have certain effects but cannot well improve the service life of the device.
Therefore, the prior art is still in need of further research and development.
Disclosure of Invention
The invention aims to overcome the defects in the prior art, provides a quantum dot light-emitting diode and a preparation method thereof, and aims to solve the technical problems that the light-emitting efficiency of a device is reduced and the service life of the device is prolonged as the hole transport layer interface of the device is not uniform and the film layer has a 'pinhole' phenomenon.
In order to achieve the purpose, the invention adopts the following technical scheme:
the invention provides a quantum dot light-emitting diode which comprises an anode, a cathode and a quantum dot light-emitting layer arranged between the anode and the cathode, wherein a hole transport layer is arranged between the quantum dot light-emitting layer and the anode, and an ionic liquid material layer is arranged on the surface, close to the quantum dot light-emitting layer, of the hole transport layer.
In the quantum dot light-emitting diode provided by the invention, the ionic liquid material layer is arranged on the surface of the hole transport layer close to the quantum dot light-emitting layer, and the ionic liquid material has the characteristics of stable chemical property, high cohesiveness, strong water and oxygen blocking capability and the like, so that after a compact ionic liquid material layer is formed, on one hand, carrier transport can be improved, and the defects of the surface of the functional layer (namely the surface of the hole transport layer) are passivated, so that the transport barrier of carriers in the device is reduced, and the light-emitting performance of the device is improved; meanwhile, when the quantum dot light-emitting diode is a flexible device, the ionic liquid material layer is introduced, so that the electron transport layer can be effectively protected in the bending and folding process of the device, the self-repairing function of cracks is realized, the designability of the device is improved, and the service life of the device is prolonged.
The invention also provides a preparation method of the quantum dot light-emitting diode, which comprises the following steps:
providing a substrate, wherein a quantum dot light-emitting layer or a hole transport layer is arranged on the surface of the substrate;
and preparing an ionic liquid material layer on the quantum dot light-emitting layer or the hole transport layer.
The preparation method of the quantum dot light-emitting diode provided by the invention has the advantages that the process is simple, the cost is low, the ionic liquid material layer is directly prepared on the substrate (namely on the quantum dot light-emitting layer or the hole transport layer), the ionic liquid material layer not only has the outstanding advantages of strong conductivity, stable property, good designability, small vapor pressure, large degree of adhesion, greenness and no pollution, but also has the characteristics of compact structure, good thermal stability and good water and oxygen blocking capacity, the light-emitting performance of the device can be improved, and the service life of the device can be prolonged.
Drawings
Fig. 1 is a schematic structural diagram of a quantum dot light emitting diode according to an embodiment of the invention.
Detailed Description
In order to make the technical problems, technical solutions and advantageous effects to be solved by the present invention more clearly apparent, the present invention is further described in detail below with reference to the following embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
In the embodiment of the invention, the ionic liquid is salt which is in a liquid state at room temperature or close to room temperature and completely consists of anions and cations, and is also called as low-temperature molten salt, and the ionic liquid has the outstanding advantages of strong conductivity, stable property, high heat resistance, low vapor pressure, non-flammability, greenness, no pollution, capability of adjusting various performances of materials through anion and cation design and the like. And an ionic liquid material layer consisting of ionic liquid is arranged on the surface of the hole transport layer of the device by utilizing the specific performance of the ionic liquid material.
Specifically, an embodiment of the present invention provides a quantum dot light emitting diode, which includes an anode, a cathode, and a quantum dot light emitting layer disposed between the anode and the cathode, wherein a hole transport layer is disposed between the quantum dot light emitting layer and the anode, and is characterized in that an ionic liquid material layer is disposed on a surface of the hole transport layer, which is close to the quantum dot light emitting layer.
In the quantum dot light-emitting diode provided by the embodiment of the invention, the ionic liquid material layer is arranged on the surface of the hole transport layer close to the quantum dot light-emitting layer, and the ionic liquid material has the characteristics of stable chemical property, high cohesiveness, strong water and oxygen blocking capability and the like, so that after a compact ionic liquid material layer is formed, on one hand, carrier transport can be improved, and the defects of the surface of the functional layer (namely the surface of the hole transport layer) are passivated, so that the transport barrier of carriers in the device is reduced, and the light-emitting performance of the device is improved; meanwhile, when the quantum dot light-emitting diode is a flexible device, the ionic liquid material layer is introduced, so that the electron transport layer can be effectively protected in the bending and folding process of the device, the self-repairing function of cracks is realized, the designability of the device is improved, and the service life of the device is prolonged.
Further, the quantum dot light-emitting layer, the ionic liquid material layer and the hole transport layer are formed in a laminated mode. Therefore, the ionic liquid material layer can further passivate the quantum dot light-emitting layer while improving the surface of the hole transport layer, and the defect that the quantum dot light-emitting layer is not completely covered or has pinholes or uneven surface when being close to the surface of the hole transport layer is effectively overcome.
Further, in the above embodiments of the present invention, the thickness of the ionic liquid material layer is 5-80 nm.
Further, in the above embodiments of the present invention, the ionic liquid material in the ionic liquid material layer is a salt composed of an organic cation and an inorganic anion; wherein the organic cation is selected from alkyl quaternary ammonium ions [ NRxH4-x]+Alkyl quaternary phosphonium ion [ PRxH4-x]+Alkyl-substituted imidazolium [ R ]1R3im]+Alkyl-substituted pyridinium ion [ RPy]+Wherein the inorganic anion is selected from one of halogen ion and inorganic acid anion.
Preferably, the quaternary alkylammonium ion is selected from one of the N, N-diethyl-N-methyl-N- (N-propyl) ammonium cation and the N, N-diethyl-N-methyl- (2-methoxyethyl) ammonium cation, the quaternary alkylammonium ion is selected from one of the tetradecyltributylphosphonium cation, tetramethylolphosphonium cation, ethyltributylphosphonium cation and tetrabutylphosphonium cation, and the alkyl-substituted imidazolium ion is selected from the group consisting of 1-butyl-3-methylimidazolium cation, 1-ethyl-3-methylimidazolium cation, 1-octyl-3-methylimidazolium cationAt least one of a 1-decyl-3-methylimidazolium cation, a 1-hexyl-3-methylimidazolium cation, and a 1-methyl-3-N-octylimidazolium cation, the alkyl-substituted pyridinium cation being selected from one of an N-ethylpyridinium cation, an N-butylpyridinium cation, an N-hexylpyridineium cation, an N-octylpyridineium cation, and an N-methyl-N-propylpyridineium cation. The halide ion is selected from F-、Cl-、Br-And I-One of (1); the inorganic acid anion is selected from TFSI-、BF4 -、PF6 -、DCA-、CF3SO3 -、CF3COO-、(CF3SO2)3C-、(C2F5SO2)3C-、C3F7COO-、C4F9SO3 -、(C2F5SO2)2N-、SbF6 -、AsF6 -、CB11H12 -And CF3BF3 -One kind of (1).
Further, the organic cation is selected from one of alkyl quaternary phosphonium ion and alkyl substituted imidazolium ion.
Further, in the ionic liquid material of the embodiment of the present invention, the organic cation is an asymmetric cation; and/or hydrogen bonds are formed between the organic cations and the inorganic anions.
The important index for evaluating the practicability of the ionic liquid is the melting point of the ionic liquid, and the structure of the ionic liquid and the melting point of the ionic liquid have a decisive relationship and are directly related to the use temperature range of the ionic liquid. Under the condition that the cations are the same, the melting point is gradually reduced along with the increase of the volume of the anions, and the influence of the cations on the melting point can be known by comparing the melting points of different chlorides. In the case of the same anion, the melting point gradually decreases with increasing volume of the cation. Also, in order to remain liquid at room temperature, the ionic liquid is preferably asymmetric. The lower the structural symmetry of the ionic liquid, the weaker the intermolecular forces, the more uniform the cationic or anionic charge distribution, and the lower the melting point of the ionic liquid.
The order of the melting points of the anion generating compounds from large to small is: cl->NO2 ->NO3 ->AlCl4 ->BF4 ->CF3SO3>CF3CO2 -。
The viscosity of the ionic liquid at normal temperature is dozens of times to hundreds of times of that of water. The structure of the anions and cations has a great influence on the viscosity of the ionic liquid: the carbon chain length of the substituent of the cation increases the viscosity of the ionic liquid, for example, the ionic liquid with the cation [ bmin ] has much higher viscosity than [ emin ]; the alkyl branching of the substituent group increases the viscosity of the ionic liquid, for example, the ionic liquid with cation [ ibmin ] has higher viscosity than [ bmin ]; in addition, the viscosity of the ionic liquid is mainly determined by Van der Waals force and hydrogen bond action, the volume of anions is reduced, the Van der Waals force is reduced, the electrostatic action is increased, and the viscosity is reduced; the anion has high alkalinity and low viscosity, such as the anion of [ emin ] F (HF) n has high alkalinity and the viscosity is minimum. Therefore, after the cation and the anion form hydrogen bonds, the viscosity of the ionic liquid is increased; the relationship between the viscosity and the temperature of the ionic liquid is expressed by a Vogel-Tammann-Fulchers equation.
In conclusion, the organic cation is asymmetric cation, and the ionic liquid material with hydrogen bond formed between the organic cation and the inorganic anion not only ensures low melting point, but also has good viscosity.
In a preferred embodiment of the present invention, the ionic liquid material in the ionic liquid material layer is selected from 1-ethyl-3-methylimidazole bistrifluoromethanesulfonimide salt, 1-ethyl-3-methylimidazole bis (pentafluoroethylsulfonyl) imide, 1-ethyl-3-methylimidazole bistrifluoromethanesulfonimide salt, 1-ethyl-3-methylimidazolidinedicyanamide, N-diethyl-N-methyl-N- (N-propyl) trifluoromethyltrifluoroborate, 1-butyl-3-methylimidazolidium trifluoromethanesulfonate and at least one of N, N-diethyl-N-methyl-N- (2-methoxyethyl) ammoniumbis (trifluoromethanesulfonyl) imide.
Further, the material of the hole transport layer is one or more nanoparticles of transition metal oxide and transition metal chalcogenide compound. The transition metal oxide comprises one or more of NiOx, MoOx, WOx, CrOx and CuO, and the metal sulfur compound comprises MoSx, MoSex, WSx, WSex and CuS. When the flexible device is manufactured, the film layer formed by the nano particles is easy to crack, and the like, so that the device is easy to lose efficacy, and the ionic liquid material layer can effectively protect the nano particles from forming a hole transmission layer and realize the self-repairing function of cracks in the bending and folding process of the device, so that the designability and the service life of the device are improved.
Furthermore, an electronic function layer, such as an electron injection layer and an electron transport layer, is disposed between the quantum dot light emitting layer and the cathode.
The embodiment of the invention also provides a preparation method of the quantum dot light-emitting diode, which comprises the following steps:
s01: providing a substrate, wherein a quantum dot light-emitting layer or a hole transport layer is arranged on the surface of the substrate;
s02: and preparing an ionic liquid material layer on the quantum dot light-emitting layer or the hole transport layer.
The preparation method of the quantum dot light-emitting diode provided by the embodiment of the invention has the advantages of simple process and low cost, and the ionic liquid material layer is directly prepared on the substrate, has the outstanding advantages of strong conductivity, stable property, good designability, small vapor pressure, large degree of adhesion, greenness and no pollution, and has the characteristics of compact structure, good thermal stability and good water and oxygen barrier capability, so that the luminous performance of a device can be improved and the service life of the device can be prolonged.
Specifically, in step S01 described above: the substrate is used for preparing the quantum dot light-emitting diode, if a quantum dot light-emitting layer is arranged on the surface of the substrate (at the moment, the substrate is a cathode substrate), an ionic liquid material layer is directly prepared on the surface of the quantum dot light-emitting layer, and then a hole transport layer is prepared on the ionic liquid material layer; if the surface of the substrate is provided with the hole transport layer (in this case, the substrate is an anode substrate), the ionic liquid material layer is directly prepared on the surface of the hole transport layer.
Further, in the above step S02: the step of preparing a layer of ionic liquid material on the substrate comprises: the ionic liquid material can be directly deposited on the substrate for annealing treatment; alternatively, a solution containing the ionic liquid material may be formulated, deposited on the substrate, and then annealed. Wherein the solvent in the solution is an organic solvent.
Wherein the concentration of the ionic liquid dissolved in the organic solvent is 0.2-60 mg/mL. The organic solvent includes, but is not limited to, one or more of saturated hydrocarbon, unsaturated hydrocarbon, aromatic hydrocarbon, alcohol solvent, ether solvent, ketone solvent, nitrile solvent, ester solvent, and their derivatives. In particular, the solvent for dissolving the ionic liquid is preferably an alcoholic solvent, including but not limited to one or more of monohydric alcohol, polyhydric alcohol and aromatic alcohol, and specifically including but not limited to one or more of methanol, ethanol, ethylene glycol, propanol, propylene glycol, glycerol, isopropanol, butanol, pentanol, hexanol, cyclohexanol, n-butanol, benzyl alcohol and phenethyl alcohol. The method for preparing the ionic liquid material layer is a solution film forming method, and includes, but is not limited to, one or more of a spin coating method, a printing method, a blade coating method, a dip-coating method, a soaking method, a spraying method, a roll coating method, a casting method, a slit coating method and a strip coating method.
The temperature of the annealing treatment is 40-220 ℃; the time of the annealing treatment is 5-240 min.
In a specific embodiment, as shown in fig. 1, a method for preparing a positive type structure quantum dot light emitting diode includes the following steps:
step S1: preparing an anode on a substrate;
step S2: preparing a hole injection layer on the anode;
step S3: preparing a hole transport layer on the hole injection layer;
step S4: preparing an ionic liquid material layer on the hole transport layer;
step S5: preparing a quantum dot light-emitting layer on the ionic liquid material layer;
step S6: preparing an electron transport layer on the quantum dot light emitting layer;
step S7: a cathode is prepared on the electron transport layer.
In one embodiment, the preparation of the quantum dot light-emitting diode with the inversion structure comprises the following steps:
step S1: preparing a cathode on a substrate;
step S2: preparing an electron transport layer on the cathode;
step S3: preparing a quantum dot light-emitting layer on the electron transport layer;
step S4: preparing an ionic liquid material layer on the quantum dot light-emitting layer;
step S5: preparing a hole transport layer on the ionic liquid material layer;
step S6: preparing a hole injection layer on the hole transport layer;
step S7: and preparing an anode on the hole injection layer to obtain the quantum dot light-emitting diode.
In the above preparation method, the cathode includes, but is not limited to, one or more of a metal material, a carbon material, and a metal oxide. Wherein the metal material comprises one or more of Al, Ag, Cu, Mo, Au, Ba, Ca and Mg. The carbon material comprises one or more of graphite, carbon nanotubes, graphene and carbon fibers. The metal oxide can be doped or undoped metal oxide, including one or more of ITO, FTO, ATO, AZO, GZO, IZO, MZO and AMO, and also including a composite electrode sandwiching metal between doped or undoped transparent metal oxides, wherein the composite electrode includes AZO/Ag/AZO, AZO/Al/AZO, ITO/Ag/ITO, ITO/Al/ITO, ZnO/Ag/ZnO, ZnO/Al/ZnO, TiO/Al/ZnO2/Ag/TiO2、TiO2/Al/TiO2、ZnS/Ag/ZnS、ZnS/Al/ZnS、TiO2/Ag/TiO2、TiO2/Al/TiO2One or more of (a).
Wherein, the electron transport layer is selected from inorganic materials and/or organic materials with electron transport capability, wherein, the inorganic electron transport layer is selected from one or more of doped or undoped metal oxides and doped or undoped metal sulfides. It is composed ofWherein the doped or undoped metal oxide comprises ZnO, TiO2、SnO2、Ta2O3、ZrO2One or more of NiO, TiLiO, ZnAlO, ZnMgO, ZnSnO, ZnLiO and InSnO. The doped or undoped metal sulfide comprises one or more of CdS, ZnS, MoS, WS and CuS.
The quantum dot material of the quantum dot light-emitting layer is one or more of II-VI compounds, III-V compounds, II-V compounds, III-VI compounds, IV-VI compounds, I-III-VI compounds, II-IV-VI compounds or IV elementary substances. Specifically, the semiconductor materials used for the quantum dot light emitting layer include, but are not limited to, nanocrystals of II-VI semiconductors such as CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, HgS, HgSe, HgTe, PbS, PbSe, PbTe and other binary, ternary, quaternary II-VI compounds; nanocrystals of group III-V semiconductors such as GaP, GaAs, InP, InAs and other binary, ternary, quaternary III-V compounds; the semiconductor material for electroluminescence is not limited to group II-V compounds, group III-VI compounds, group IV-VI compounds, group I-III-VI compounds, group II-IV-VI compounds, group IV simple substance, and the like.
The quantum dot material of the quantum dot light-emitting layer can also be a doped or undoped inorganic perovskite type semiconductor and/or an organic-inorganic hybrid perovskite type semiconductor; specifically, the structural general formula of the inorganic perovskite type semiconductor is AMX3Wherein A is Cs+Ion, M is a divalent metal cation, including but not limited to Pb2+、Sn2+、Cu2+、Ni2+、Cd2+、Cr2+、Mn2+、Co2+、Fe2+、Ge2+、Yb2+、Eu2+X is a halide anion, including but not limited to Cl-、Br-、I-(ii) a The structural general formula of the organic-inorganic hybrid perovskite type semiconductor is BMX3Wherein B is an organic amine cation including but not limited to CH3(CH2)n-2NH3 +(n, comprises or NH)3(CH2)nNH3 2+(n, inclusive, when n ═ 2, the inorganic metal halide octahedron MX6 4-The metal cations M are positioned in the center of a halogen octahedron through connection in a roof sharing mode, and the organic amine cations B are filled in gaps among the octahedrons to form an infinitely extending three-dimensional structure; inorganic metal halide octahedra MX linked in a coterminous manner when n > 26 4-The organic amine cation bilayer (protonated monoamine) or the organic amine cation monolayer (protonated diamine) is inserted between the layers, and the organic layer and the inorganic layer are overlapped with each other to form a stable two-dimensional layered structure; m is a divalent metal cation including, but not limited to, Pb2+、Sn2+、Cu2+、Ni2+、Cd2+、Cr2+、Mn2+、Co2+、Fe2+、Ge2+、Yb2+、Eu2 +(ii) a X is a halide anion, including but not limited to Cl-、Br-、I。
Wherein, the material of the hole transport layer and/or the hole injection layer comprises but is not limited to one or more of PEDOT PSS, CuPc, F4-TCNQ, HATCN, transition metal oxide and transition metal chalcogenide compound. Wherein the transition metal oxide comprises one or more of NiOx, MoOx, WOx, CrOx and CuO. The metal sulfur compound comprises one or more of MoSx, MoSex, WSx, WSex and CuS. The hole transport layer materials include, but are not limited to, poly (9, 9-dioctylfluorene-CO-N- (4-butylphenyl) diphenylamine), polyvinylcarbazole, poly (N, N ' bis (4-butylphenyl) -N, N ' -bis (phenyl) benzidine), poly (9, 9-dioctylfluorene-CO-bis-N, N-phenyl-1, 4-phenylenediamine), 4', 4 ″ -tris (carbazol-9-yl) triphenylamine, 4' -bis (9-carbazol) biphenyl, N ' -diphenyl-N, N ' -bis (3-methylphenyl) -1,1 ' -biphenyl-4, 4' -diamine, 15N, N ' -diphenyl-N, at least one of N ' - (1-naphthyl) -1,1 ' -biphenyl-4, 4' -diamine, graphene and C60. As another embodiment, the hole transport layer is selected from inorganic materials having hole transport capability, including but not limited to at least one of NiOx, MoOx, WOx, CrOx, CuO, MoSx, MoSex, WSx, WSex, CuS.
Wherein the anode includes, but is not limited to, one or more of a metal material, a carbon material, a metal oxide, and a hole injection material. Wherein the metal material comprises one or more of Al, Ag, Cu, Mo, Au, Ba, Ca and Mg. The carbon material comprises one or more of graphite, carbon nanotubes, graphene and carbon fibers. The metal oxide can be doped or undoped metal oxide, including one or more of ITO, FTO, ATO, AZO, GZO, IZO, MZO and AMO, and also including a composite electrode sandwiching metal between doped or undoped transparent metal oxides, wherein the composite electrode includes AZO/Ag/AZO, AZO/Al/AZO, ITO/Ag/ITO, ITO/Al/ITO, ZnO/Ag/ZnO, ZnO/Al/ZnO, TiO/Al/ZnO2/Ag/TiO2、TiO2/Al/TiO2、ZnS/Ag/ZnS、ZnS/Al/ZnS、TiO2/Ag/TiO2、TiO2/Al/TiO2One or more of (a). The hole injection material comprises but is not limited to one or more of PEDOT PSS, CuPc, F4-TCNQ, HATCN, transition metal oxide and transition metal chalcogenide compound. Wherein the transition metal oxide comprises one or more of NiOx, MoOx, WOx, CrOx and CuO. The metal sulfur compound comprises one or more of MoSx, MoSex, WSx, WSex and CuS.
Wherein the substrate is a rigid substrate or a flexible substrate, wherein the rigid substrate includes but is not limited to one or more of glass and metal foil; the flexible substrate includes, but is not limited to, one or more of polyethylene terephthalate (PET), polyethylene terephthalate (PEN), Polyetheretherketone (PEEK), Polystyrene (PS), Polyethersulfone (PES), Polycarbonate (PC), Polyarylate (PAT), Polyarylate (PAR), Polyimide (PI), polyvinyl chloride (PV), Polyethylene (PE), polyvinylpyrrolidone (PVP), and textile fibers.
In addition to the above specific description, the preparation method of each layer in the above quantum dot light emitting diode may be a chemical method or a physical method, wherein the chemical method includes, but is not limited to, one or more of a chemical vapor deposition method, a continuous ion layer adsorption and reaction method, an anodic oxidation method, an electrodeposition method, and a coprecipitation method; physical methods include, but are not limited to, physical coating methods or solution methods, wherein solution methods include, but are not limited to, spin coating, printing, knife coating, dip-coating, dipping, spraying, roll coating, casting, slot coating, bar coating; physical coating methods include, but are not limited to, one or more of thermal evaporation coating, electron beam evaporation coating, magnetron sputtering, multi-arc ion coating, physical vapor deposition, atomic layer deposition, pulsed laser deposition.
Finally, the embodiment of the invention also provides a printed quantum dot display screen which comprises the quantum dot light-emitting diode.
The invention is described in further detail with reference to a part of the test results, which are described in detail below with reference to specific examples.
Example 1
A quantum dot light-emitting diode is prepared by the following steps:
firstly, dissolving [ EMIM ] TFSI in ethanol to prepare 20mg/mL ionic liquid solution, and then preparing the device according to the following steps:
(1) spin-coating a PEDOT (PSS) hole injection layer on the ITO conductive glass;
(2) spin-coating a TFB hole transport layer on a PEDOT/PSS hole injection layer;
(3) spin-coating the ionic liquid solution on a TFB hole transport layer at 4500rpm/s, and heating at 120 ℃ for 15min to obtain a compact [ EMIM ] TFSI ionic liquid material layer;
(4) spin-coating a CdSe/ZnS quantum dot light-emitting layer on the [ EMIM ] TFSI ionic liquid material layer;
(5) spin-coating a ZnO electron transmission layer on the CdSe/ZnS quantum dot light-emitting layer;
(6) and evaporating and plating an Al cathode layer on the ZnO electron transmission layer to obtain the quantum dot light-emitting diode.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.
Claims (10)
1. The quantum dot light-emitting diode comprises an anode, a cathode and a quantum dot light-emitting layer arranged between the anode and the cathode, wherein a hole transport layer is arranged between the quantum dot light-emitting layer and the anode, and the quantum dot light-emitting diode is characterized in that an ionic liquid material layer is arranged on the surface, close to the quantum dot light-emitting layer, of the hole transport layer.
2. The quantum dot light-emitting diode of claim 1, wherein the quantum dot light-emitting layer, the ionic liquid material layer, and the hole transport layer are stacked.
3. The quantum dot light-emitting diode of claim 1, wherein the ionic liquid material layer comprises one or more ionic liquid materials, and the ionic liquid materials are salts composed of organic cations and inorganic anions; wherein the content of the first and second substances,
the organic cation is selected from one of alkyl quaternary ammonium ion, alkyl quaternary phosphonium ion, alkyl substituted imidazolium ion and alkyl substituted pyridinium ion, and the inorganic anion is selected from one of halogen ion and inorganic acid anion.
4. The qd-led of claim 3, wherein the alkyl quaternary ammonium ion is selected from one of N, N-diethyl-N-methyl-N- (N-propyl) ammonium cation and N, N-diethyl-N-methyl- (2-methoxyethyl) ammonium cation; alternatively, the first and second electrodes may be,
the alkyl quaternary phosphonium ion is selected from one of tetradecyl tributylphosphonium cation, tetramethylolphosphonium cation, ethyltributylphosphonium cation and tetrabutylphosphonium cation; alternatively, the first and second electrodes may be,
the alkyl-substituted imidazolium is selected from one of 1-butyl-3-methylimidazole cation, 1-ethyl-3-methylimidazole cation, 1-octyl-3-methylimidazole cation, 1-decyl-3-methylimidazole cation, 1-hexyl-3-methylimidazole cation and 1-methyl-3-n-octylimidazole cation; alternatively, the first and second electrodes may be,
the alkyl-substituted pyridine ion is selected from one of N-ethyl pyridine cation, N-butyl pyridine cation, N-hexyl pyridine cation, N-octyl pyridine cation and N-methyl-N-propyl pyridine cation; alternatively, the first and second electrodes may be,
the halide ion is selected from F-、Cl-、Br-And I-One of (1); alternatively, the first and second electrodes may be,
the inorganic acid anion is selected from TFSI-、BF4 -、PF6 -、DCA-、CF3SO3 -、CF3COO-、(CF3SO2)3C-、(C2F5SO2)3C-、C3F7COO-、C4F9SO3 -、(C2F5SO2)2N-、SbF6 -、AsF6 -、CB11H12 -And CF3BF3 -One kind of (1).
5. The qd-led of claim 3, wherein the organic cation is selected from one of alkyl quaternary phosphonium ions and alkyl substituted imidazolium ions.
6. The qd-led of claim 3, wherein the organic cation is an asymmetric cation; and/or
Hydrogen bonds are formed between the organic cations and the inorganic anions.
7. The quantum dot light-emitting diode of claim 1, wherein the ionic liquid material in the ionic liquid material layer is selected from the group consisting of 1-ethyl-3-methylimidazole bistrifluoromethylsulfonyl imide salt, 1-ethyl-3-methylimidazole bis (pentafluoroethylsulfonyl) imide, 1-ethyl-3-methylimidazole bistrifluoromethylsulfonyl imide salt, 1-ethyl-3-methylimidazolidinedicyanamide, N-diethyl-N-methyl-N- (N-propyl) trifluoromethyltrifluoroborate, 1-butyl-3-methylimidazolidium trifluoromethanesulfonate and at least one of N, N-diethyl-N-methyl-N- (2-methoxyethyl) ammoniumbis (trifluoromethanesulfonyl) imide.
8. The qd-led of any one of claims 1-7, wherein the thickness of the ionic liquid material layer is: 5-80 nm; and/or
The material of the hole transport layer is one or more nanoparticles of transition metal oxides and transition metal chalcogenide compounds.
9. The qd-led of any one of claims 1 to 7, wherein an electronically functional layer is disposed between the qd-light emitting layer and the cathode.
10. A preparation method of a quantum dot light-emitting diode is characterized by comprising the following steps:
providing a substrate, wherein a quantum dot light-emitting layer or a hole transport layer is arranged on the surface of the substrate;
and preparing an ionic liquid material layer on the quantum dot light-emitting layer or the hole transport layer.
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Application publication date: 20200605 |