CN111244239A - LED patterned substrate and preparation method thereof - Google Patents

LED patterned substrate and preparation method thereof Download PDF

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Publication number
CN111244239A
CN111244239A CN202010061564.1A CN202010061564A CN111244239A CN 111244239 A CN111244239 A CN 111244239A CN 202010061564 A CN202010061564 A CN 202010061564A CN 111244239 A CN111244239 A CN 111244239A
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Prior art keywords
sapphire substrate
film
shaped
sio
simple substance
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CN202010061564.1A
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CN111244239B (en
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徐平
胡耀武
王杰
龚彬彬
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Xiangneng Hualei Optoelectrical Co Ltd
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Xiangneng Hualei Optoelectrical Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen

Abstract

The invention discloses an LED patterned substrate and a preparation method thereof, relating to the field of semiconductors, wherein the preparation method comprises the following steps: providing a sapphire substrate; after the sapphire substrate is subjected to conventional treatment, placing the sapphire substrate into an electron beam vacuum coating reaction cavity for evaporating an Al simple substance film; carrying out dry etching on the sapphire substrate evaporated with the Al simple substance film to form a plurality of V-shaped pits on the surface of the Al simple substance film; placing the sapphire substrate with a plurality of V-shaped pits into a plasma enhanced chemical vapor deposition reaction chamber, and depositing SiO on one side of the Al simple substance film far away from the sapphire substrate2A film; to SiO2Performing dry etching on the film to form a plurality of arc-shaped structures; by chemical vapor deposition of metal organic compounds on SiO2Continuously growing a gallium nitride-based epitaxial layer on one side of the film far away from the sapphire substrate to obtain an epitaxial wafer with a complete structure. The preparation method can effectively improve the luminous efficiency and luminous intensity of the LED chip, thereby improving the brightness of the LED chip.

Description

LED patterned substrate and preparation method thereof
Technical Field
The invention relates to the technical field of semiconductors, in particular to an LED patterned substrate and a preparation method thereof.
Background
An LED (Light Emitting Diode) is a semiconductor Light Emitting device, and mainly includes a P-type semiconductor and an N-type semiconductor; the N-type region has a plurality of electrons with high mobility, the P-type region has a plurality of holes with low mobility, and a transition layer between the P-type semiconductor and the N-type semiconductor is called a PN junction; when a forward voltage is applied to the LED, electrons can recombine with holes and release photons.
At present, a sapphire substrate is the most widely used substrate material in an LED chip, and a sapphire substrate patterning technology is an important means for improving the luminous efficiency of the LED chip. Therefore, in order to increase the competitiveness of LED chips, how to improve the chip brightness by the sapphire substrate patterning technology based on the prior art becomes an urgent problem to be solved.
Disclosure of Invention
The invention provides an LED patterned substrate and a preparation method thereof, which can effectively improve the luminous efficiency and luminous intensity of an LED chip, thereby improving the brightness of the LED chip.
In a first aspect, the present application provides a method for preparing an LED patterned substrate, the method comprising:
providing a sapphire substrate;
after the sapphire substrate is subjected to conventional treatment, placing the sapphire substrate into an electron beam vacuum coating reaction cavity, and evaporating an Al simple substance film on the surface of the sapphire substrate;
carrying out dry etching on the sapphire substrate evaporated with the Al simple substance film, and forming a plurality of V-shaped pits on the surface of the Al simple substance film; the V-shaped pits are sunken towards the sapphire substrate along the direction vertical to the plane of the sapphire substrate, and the height of each V-shaped pit is smaller than the thickness of the Al simple substance film along the direction vertical to the plane of the sapphire substrate;
placing the sapphire substrate with a plurality of V-shaped pits into a plasma enhanced chemical vapor deposition reaction chamber, wherein the Al simple substance film is far away from the sapphireDeposition of SiO on one side of a substrate2A film; wherein, the SiO is positioned on one side of the Al simple substance film far away from the sapphire substrate2The film is filled in the V-shaped pits and covers the surface of one side, away from the sapphire substrate, of the Al simple substance film;
for the SiO2Performing dry etching on the film to form a plurality of arc-shaped structures; wherein the orthographic projection of each arc-shaped structure on the sapphire substrate covers the orthographic projection of a preset number of V-shaped pits on the sapphire substrate; the arc-shaped structure, the Al elementary substance film corresponding to the arc-shaped structure and the sapphire substrate form a first structure body together;
by chemical vapor deposition of metal organic compounds on said SiO2And continuously growing a gallium nitride-based epitaxial layer on one side of the film, which is far away from the sapphire substrate, so as to obtain an epitaxial wafer with a complete structure.
Optionally, the step of performing a conventional process on the sapphire substrate includes:
introducing 130L/min 100-650 deg.C hydrogen gas, maintaining the reaction chamber pressure at 300mbar and 100-300mbar, and processing the sapphire substrate for 5-10 min.
Optionally, the thickness of the elemental Al thin film is 200-300nm along a direction perpendicular to the plane of the sapphire substrate.
Optionally, in a direction perpendicular to the plane of the sapphire substrate, the height of each V-shaped pit is 80-100nm, the diameter of the bottom surface is 100-120nm, the bottom surface edges of two adjacent V-shaped pits are separated by a first interval, and the first interval is 20-30 nm.
Optionally, the SiO is along a direction perpendicular to the plane of the sapphire substrate2The thickness of the film is 1800-2100 nm.
Optionally, the width of the bottom surface of the first structure is 1800-2000nm, and the height of the first structure along the direction perpendicular to the plane of the sapphire substrate is 2200-2500 nm.
Optionally, the bottom edges of two adjacent first structures are separated by a second interval, and the second interval is 500-700 nm.
Optionally, each of the first structures comprises, along a direction perpendicular to the plane of the sapphire substrate, sapphire with a thickness of 100-250nm, an Al simple substance with a thickness of 200-300nm, and SiO with a thickness of 1800-2100nm2。
In a second aspect, the present application provides an LED patterned substrate prepared by the method for preparing an LED patterned substrate according to any one of the first aspect, wherein the LED patterned substrate includes:
a sapphire substrate;
the Al elementary substance film is positioned on the surface of the sapphire substrate and comprises a plurality of V-shaped pits; the V-shaped pits are sunken towards the sapphire substrate along a direction perpendicular to the plane of the sapphire substrate;
depositing SiO on one side of the Al simple substance film far away from the sapphire substrate2Film of said SiO2The film comprises a plurality of arc-shaped structures, wherein the orthographic projection of each arc-shaped structure on the sapphire substrate covers the orthographic projection of a preset number of V-shaped pits on the sapphire substrate; the arc-shaped structure, the Al elementary substance film corresponding to the arc-shaped structure and the sapphire substrate form a first structure body together.
Compared with the prior art, the LED patterned substrate and the preparation method thereof provided by the invention at least realize the following beneficial effects:
(1) due to SiO2Is less than that of sapphire, and light emitted from the multiple quantum well light-emitting layer is emitted to SiO through GaN2When the substrate is patterned, total reflection is easier to occur, so that more light can be emitted from the front surface or the side surface, and the luminous efficiency of the LED chip is improved.
(2) The preparation method of the LED patterned substrate can reduce the lateral epitaxial growth of the first structure body in the patterned substrate, improve the crystallization quality and is beneficial to improving the brightness of an LED chip.
(3) Because the first structure body comprises the Al simple substance film with the surfaces formed with the V-shaped pits, when light emitted from the multi-quantum-well light-emitting layer is transversely transmitted in the Al film, the light meets a nano-scale V-shaped pit window, the light can oscillate back and forth at two ends of the window, the light with the wavelength matched with the window can be enhanced and is transmitted out from the side wall of the V-shaped pit, and the light-emitting intensity of the LED chip is effectively improved.
Of course, it is not necessary for any product in which the present invention is practiced to achieve all of the above-described technical effects simultaneously.
Other features of the present invention and advantages thereof will become apparent from the following detailed description of exemplary embodiments thereof, which proceeds with reference to the accompanying drawings.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description, serve to explain the principles of the invention.
Fig. 1 is a flowchart illustrating a method for manufacturing an LED patterned substrate according to an embodiment of the present disclosure;
FIG. 2 is a schematic diagram illustrating a method for preparing an LED patterned substrate provided in the embodiment of FIG. 1;
fig. 3 is another schematic diagram illustrating a method for manufacturing an LED patterned substrate according to the embodiment of fig. 1.
Detailed Description
Various exemplary embodiments of the present invention will now be described in detail with reference to the accompanying drawings. It should be noted that: the relative arrangement of the components and steps, the numerical expressions and numerical values set forth in these embodiments do not limit the scope of the present invention unless specifically stated otherwise.
The following description of at least one exemplary embodiment is merely illustrative in nature and is in no way intended to limit the invention, its application, or uses.
Techniques, methods, and apparatus known to those of ordinary skill in the relevant art may not be discussed in detail but are intended to be part of the specification where appropriate.
In all examples shown and discussed herein, any particular value should be construed as merely illustrative, and not limiting. Thus, other examples of the exemplary embodiments may have different values.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, further discussion thereof is not required in subsequent figures.
The invention provides a preparation method of an LED patterned substrate, which can effectively improve the luminous efficiency and luminous intensity of an LED chip so as to improve the brightness of the LED chip.
The following detailed description is to be read in connection with the drawings and the detailed description.
Fig. 1 is a flowchart illustrating a method for manufacturing an LED patterned substrate according to an embodiment of the present disclosure, and fig. 2 is a schematic diagram illustrating the method for manufacturing the LED patterned substrate according to the embodiment of fig. 1. Referring to fig. 1 and fig. 2, a method for manufacturing an LED patterned substrate includes:
step 101, providing a sapphire substrate 210;
102, after the sapphire substrate 210 is subjected to conventional treatment, placing the sapphire substrate 210 into an electron beam vacuum coating reaction chamber, and evaporating an Al elemental film 220 on the surface of the sapphire substrate 210;
103, performing dry etching on the sapphire substrate 210 evaporated with the elemental Al film 220 to form a plurality of V-shaped pits 230 on the surface of the elemental Al film 220; the V-shaped pits 230 are recessed toward the sapphire substrate 210 in a direction perpendicular to the plane of the sapphire substrate 210, and the height L of the V-shaped pits 230 is in a direction perpendicular to the plane of the sapphire substrate 2101Less than the thickness L of the Al simple substance film2；
104, placing the sapphire substrate 210 with the plurality of V-shaped pits 230 formed therein into a plasma enhanced chemical vapor deposition reaction chamber, and depositing SiO on the side of the Al simple substance film 220 far away from the sapphire substrate 2102A film 240; wherein, SiO is positioned on one side of the Al simple substance film far away from the sapphire substrate2The film 240 is filled in the plurality of V-shaped pits 230 and covers the surface of the Al simple substance film 220 on the side far away from the sapphire substrate 210;
step 105, for SiO2Performing dry etching on the film 240 to form a plurality of arc-shaped structures 250; the orthographic projection of each arc-shaped structure on the sapphire substrate covers the orthographic projection of a preset number of V-shaped pits on the sapphire substrate; the arc-shaped structure 250, the Al simple substance film 220 corresponding to the arc-shaped structure and the sapphire substrate 210 form a first structure body 200 together;
step 106, performing chemical vapor deposition on SiO by using metal organic compound2And continuously growing a gallium nitride-based epitaxial layer on the side of the film 240 far away from the sapphire substrate 210 to obtain an epitaxial wafer with a complete structure.
In this embodiment, a Plasma Enhanced Chemical Vapor Deposition (PEDCVD) method may be adopted to deposit SiO on the side of the Al simple substance film 220 away from the sapphire substrate 2102A film 240. SiO 22After the film 240 is formed, a photoresist may be coated on the surface thereof, and the film is nested by a lithography machine, and then etched to the sapphire substrate 210 by using an inductively coupled plasma etcher, and finally, the photoresist is removed and cleaned, thereby forming the first structure 200 in a yurt shape.
As shown in fig. 2, the first structure 200 in the shape of a yurt includes an arc structure 250, an Al simple substance thin film 220 corresponding to the arc structure, and a sapphire substrate 210. Since a plurality of V-shaped pits are formed in the elemental Al thin film, light emitted from the multiple quantum well layer encounters these nanometer-scale V-shaped pit windows when propagating laterally in the elemental Al thin film. At the moment, light can oscillate back and forth at the two ends of the window, light with the wavelength matched with the window of the V-shaped pit can be enhanced and is transmitted out from the side wall of the V-shaped pit, and therefore the luminous intensity of the LED chip is improved.
Fig. 3 is another schematic diagram illustrating a method for manufacturing an LED patterned substrate according to the embodiment of fig. 1. See FIG. 3, due to SiO2Has a refractive index of 1.46, the refractive index of sapphire is 1.78, and the refractive index of sapphire is greater than that of SiO2. Therefore, when light emitted from the multi-quantum well layer is emitted to the sapphire substrate via GaN, the angle must be larger than the critical angle θ for total reflection146.5 ° can be totally reflected; in the present embodiment, the Al simple substance film 220 is far away from the sapphire substrateDeposition of SiO on one side of the bottom 2102After the thin film 240, light emitted from the multi-quantum well layer is directed through the GaN layer to the SiO deposited layer2When the sapphire substrate of the film 240 is used, the angle is only larger than the critical angle theta of total reflection2The total reflection can be generated at 36.5 degrees, and the light is emitted from the front surface or the side surface of the patterned substrate, so that the luminous efficiency of the LED chip is greatly improved.
Optionally, the step of performing conventional processing on the sapphire substrate 210 includes:
introducing 130L/min 100-650 deg.C hydrogen gas, maintaining the reaction chamber pressure at 300mbar and 100-300mbar, and processing the sapphire substrate for 5-10 min.
Optionally, the thickness of the elemental Al thin film 220 is 200-300nm in a direction perpendicular to the plane of the sapphire substrate 210.
Specifically, if the thickness of the elemental Al thin film 220 is set to be less than 200nm, an excessively small thickness is not favorable for forming V-shaped pits in the elemental Al thin film 220, and the light intensity of light emitted from the multiple quantum well light-emitting layer cannot be increased; if the thickness of the Al simple substance film 220 is set to be greater than 300nm, the thickness of the LED chip is increased, which is not favorable for meeting the requirement of thinning the LED chip. In this embodiment, the thickness of the elemental Al film 220 is set to 200-300nm, which is not only beneficial to forming a V-shaped pit in the elemental Al film 220 to increase the light intensity of the light emitted by the multiple quantum well light-emitting layer, but also can increase the thickness of the LED chip as little as possible, thereby meeting the requirement of thinning.
Optionally, the height L of each V-shaped pit 230 is in a direction perpendicular to the plane of the sapphire substrate 210180-100nm, a bottom diameter D1100-120nm, the bottom edges of two adjacent V-shaped pits 230 are separated by a first interval D2The first interval is 20-30 nm.
Specifically, the height of the V-shaped pit may be set according to the thickness of the elemental Al thin film. In this embodiment, since the thickness of the Al simple substance film 220 is 200-300nm, if the height L of the V-shaped pit 230 is equal to1Too small an arrangement will cause space redundancy, and the Al simple substance film cannot be fully utilized to form V-shaped pits with larger height. Therefore, the height L of V-shaped pit 230 is set1Set at 80-100nm, can be increasedThe side wall area of the V-shaped pit enables more light to be transmitted out from the side wall of the V-shaped pit, and the luminous intensity of the LED chip is further improved.
In addition, when the bottom surface diameter D of V-shaped pit 2301Less than 100nm may reduce the sidewall area of V-shaped pit 230, which is detrimental to light propagating out of the sidewalls of V-shaped pit 230; if the bottom surface diameter D of V-shaped pit 2301Larger than 120nm is not preferable for increasing the number of V-shaped pits per unit area. Therefore, the present application sets the bottom surface diameter of V-shaped pit 230 to 100nm ≦ D1120nm or less, and a first interval of 20nm or more between bottom edges of two adjacent V-shaped pits 2302The number of the V-shaped pits in a unit area can be ensured, the side wall area of each V-shaped pit is increased, light transmission is facilitated, the luminous intensity of the LED chip is further improved, and the purpose of improving the brightness of the LED chip is achieved.
Optionally, SiO is in a direction perpendicular to the plane of the sapphire substrate 2102Thickness L of film 24031800 plus 2100 nm.
The surface state of the substrate is critical to the performance of the LED chip. In this example, SiO2Thickness L of film 2403Set at 1800-2100nm, on the one hand, to enable deposition of SiO2Filling up a plurality of V-shaped pits in the Al simple substance film 220 to utilize SiO2The light emitting efficiency of the LED is improved due to the characteristic of small refractive index; on the other hand, SiO has a large thickness2The film can avoid impurity pollution possibly brought in the process of the later stage working procedure, can weaken the influence of the environmental atmosphere on the surface of the sapphire substrate, passivates the surface of the substrate, plays a sufficient role in protection and effectively improves the stability and the reliability of the LED chip.
Optionally, the width D of the bottom surface of the first structure body31800-2000nm, and the height L of the first structure body along the direction perpendicular to the plane of the sapphire substrate 21042200-.
Optionally, the bottom edges of two adjacent first structures are separated by a second interval, and the second interval is 500nm and 700 nm.
Specifically, each arc-shaped structure is arranged on the sapphire substrateThe orthographic projection of the sapphire substrate covers about 100-120 orthographic projections of the V-shaped pits. Since the bottom surface diameter D of the V-shaped pit is set in this embodiment1Set to 100 and 120nm, the bottom width D of the first structure can be determined by calculating the bottom area of each V-shaped pit31800 and 2000 nm.
Further, if the second interval between the bottom surface edges of two adjacent first structures is greater than 700nm, the number of first structures formed on the sapphire substrate is reduced, affecting the emission from GaN to SiO2Total reflectance of light. Therefore, in order to increase the number of the first structures on the sapphire substrate and the number of the first structures in a unit area and further improve the total light reflectivity, the second interval between the bottom edges of two adjacent first structures can be set to be 500-700nm, which is beneficial to the light emitting efficiency of the LED chip and obviously reduces the light attenuation.
Optionally, each first structure 200 comprises sapphire with a thickness of 100-250nm, Al with a thickness of 200-300nm and SiO with a thickness of 1800-2100nm along a direction perpendicular to the plane of the sapphire substrate 2102。
Specifically, the first Mongolian yurt structure 200 contains SiO2The lateral epitaxial growth of the first structure body can be reduced, so that the crystallization quality is improved, and the brightness of the LED chip is further improved.
The preparation method of the LED patterned substrate provided by the invention at least realizes the following beneficial effects:
(1) due to SiO2Is less than that of sapphire, and light emitted from the multiple quantum well light-emitting layer is emitted to SiO through GaN2When the substrate is patterned, total reflection is easier to occur, so that more light can be emitted from the front surface or the side surface, and the luminous efficiency of the LED chip is improved.
(2) The preparation method of the LED patterned substrate can reduce the lateral epitaxial growth of the first structure body in the patterned substrate, improve the crystallization quality and is beneficial to improving the brightness of an LED chip.
(3) Because the first structure body comprises the Al simple substance film with the surfaces formed with the V-shaped pits, when light emitted from the multi-quantum-well light-emitting layer is transversely transmitted in the Al film, the light meets a nano-scale V-shaped pit window, the light can oscillate back and forth at two ends of the window, the light with the wavelength matched with the window can be enhanced and is transmitted out from the side wall of the V-shaped pit, and the light-emitting intensity of the LED chip is effectively improved.
The application also provides an LED patterned substrate prepared by the preparation method of the patterned substrate, and the patterned substrate comprises:
a sapphire substrate;
the single Al film is positioned on the surface of the sapphire substrate and comprises a plurality of arc structures and a plurality of V-shaped pits; the V-shaped pits are sunken towards the sapphire substrate along the direction vertical to the plane of the sapphire substrate;
depositing SiO on the side of the Al simple substance film far away from the sapphire substrate2Film, SiO2The film comprises a plurality of arc-shaped structures, and the orthographic projection of each arc-shaped structure on the sapphire substrate covers the orthographic projection of a preset number of V-shaped pits on the sapphire substrate; the arc-shaped structure, the Al elementary substance film corresponding to the arc-shaped structure and the sapphire substrate form a first structure body together.
The LED patterned substrate provided by the invention at least realizes the following beneficial effects:
(1) due to SiO2Is less than that of sapphire, and light emitted from the multiple quantum well light-emitting layer is emitted to SiO through GaN2When the substrate is patterned, total reflection is easier to occur, so that more light can be emitted from the front surface or the side surface, and the luminous efficiency of the LED chip is improved.
(2) Because the first structure body contains the lateral epitaxial growth of the first structure body, the crystallization quality is improved, and the brightness of the LED chip is favorably improved.
(3) Because the first structure body comprises the Al simple substance film with the surfaces formed with the V-shaped pits, when light emitted from the multi-quantum-well light-emitting layer is transversely transmitted in the Al film, the light meets a nano-scale V-shaped pit window, the light can oscillate back and forth at two ends of the window, the light with the wavelength matched with the window can be enhanced and is transmitted out from the side wall of the V-shaped pit, and the light-emitting intensity of the LED chip is effectively improved.
Although some specific embodiments of the present invention have been described in detail by way of examples, it should be understood by those skilled in the art that the above examples are for illustrative purposes only and are not intended to limit the scope of the present invention. It will be appreciated by those skilled in the art that modifications may be made to the above embodiments without departing from the scope and spirit of the invention. The scope of the invention is defined by the appended claims.

Claims (9)

1. A preparation method of an LED patterned substrate is characterized by comprising the following steps:
providing a sapphire substrate;
after the sapphire substrate is subjected to conventional treatment, placing the sapphire substrate into an electron beam vacuum coating reaction cavity, and evaporating an Al simple substance film on the surface of the sapphire substrate;
carrying out dry etching on the sapphire substrate evaporated with the Al simple substance film, and forming a plurality of V-shaped pits on the surface of the Al simple substance film; the V-shaped pits are sunken towards the sapphire substrate along the direction vertical to the plane of the sapphire substrate, and the height of each V-shaped pit is smaller than the thickness of the Al simple substance film along the direction vertical to the plane of the sapphire substrate;
placing the sapphire substrate with a plurality of V-shaped pits into a plasma enhanced chemical vapor deposition reaction chamber, and depositing SiO on one side of the Al simple substance film far away from the sapphire substrate2A film; wherein, the SiO is positioned on one side of the Al simple substance film far away from the sapphire substrate2The film is filled in the V-shaped pits and covers the surface of one side, away from the sapphire substrate, of the Al simple substance film;
for the SiO2Performing dry etching on the film to form a plurality of arc-shaped structures; wherein the orthographic projection of each arc-shaped structure on the sapphire substrate covers the orthographic projection of a preset number of V-shaped pits on the sapphire substrate; the arc structure and the arc structureThe corresponding Al simple substance film and the sapphire substrate form a first structure body together;
by chemical vapor deposition of metal organic compounds on said SiO2And continuously growing a gallium nitride-based epitaxial layer on one side of the film, which is far away from the sapphire substrate, so as to obtain an epitaxial wafer with a complete structure.
2. The method for preparing an LED patterned substrate according to claim 1, wherein the step of performing a conventional treatment on the sapphire substrate comprises:
introducing 130L/min 100-650 deg.C hydrogen gas, maintaining the reaction chamber pressure at 300mbar and 100-300mbar, and processing the sapphire substrate for 5-10 min.
3. The method as claimed in claim 2, wherein the thickness of the Al film is 200-300nm along a direction perpendicular to the plane of the sapphire substrate.
4. The method as claimed in claim 3, wherein along a direction perpendicular to the plane of the sapphire substrate, the height of each V-shaped pit is 80-100nm, the bottom diameter is 100-120nm, the bottom edges of two adjacent V-shaped pits are separated by a first interval, and the first interval is 20-30 nm.
5. The method for preparing an LED patterned substrate according to claim 1, wherein the SiO is formed along a direction perpendicular to the plane of the sapphire substrate2The thickness of the film is 1800-2100 nm.
6. The method as claimed in claim 5, wherein the width of the bottom surface of the first structure is 1800 and 2000nm, and the height of the first structure along the direction perpendicular to the plane of the sapphire substrate is 2200 and 2500 nm.
7. The method as claimed in claim 6, wherein the bottom edges of two adjacent first structures are separated by a second distance, and the second distance is 500-700 nm.
8. The method as claimed in claim 7, wherein along a direction perpendicular to the plane of the sapphire substrate, each of the first structures comprises sapphire with a thickness of 100-250nm, Al with a thickness of 200-300nm, and SiO with a thickness of 1800-2100nm2。
9. An LED patterned substrate produced by the production method for an LED patterned substrate according to any one of claims 1 to 8, comprising:
a sapphire substrate;
the Al elementary substance film is positioned on the surface of the sapphire substrate and comprises a plurality of V-shaped pits; the V-shaped pits are sunken towards the sapphire substrate along a direction perpendicular to the plane of the sapphire substrate;
depositing SiO on one side of the Al simple substance film far away from the sapphire substrate2Film of said SiO2The film comprises a plurality of arc-shaped structures, wherein the orthographic projection of each arc-shaped structure on the sapphire substrate covers the orthographic projection of a preset number of V-shaped pits on the sapphire substrate; the arc-shaped structure, the Al elementary substance film corresponding to the arc-shaped structure and the sapphire substrate form a first structure body together.
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WO2023137814A1 (en) * 2022-01-18 2023-07-27 聚灿光电科技股份有限公司 Method for manufacturing high-voltage led chip

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JPS5346665B2 (en) * 1974-12-24 1978-12-15
CN102842497A (en) * 2011-06-20 2012-12-26 英飞凌科技股份有限公司 Method of patterning a substrate
CN106463574A (en) * 2014-05-30 2017-02-22 皇家飞利浦有限公司 Light-emitting device with patterned substrate

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CN102842497A (en) * 2011-06-20 2012-12-26 英飞凌科技股份有限公司 Method of patterning a substrate
CN106463574A (en) * 2014-05-30 2017-02-22 皇家飞利浦有限公司 Light-emitting device with patterned substrate

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023137814A1 (en) * 2022-01-18 2023-07-27 聚灿光电科技股份有限公司 Method for manufacturing high-voltage led chip

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