CN111244193A - Diode, detector and manufacturing method of detector - Google Patents

Diode, detector and manufacturing method of detector Download PDF

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Publication number
CN111244193A
CN111244193A CN202010059368.0A CN202010059368A CN111244193A CN 111244193 A CN111244193 A CN 111244193A CN 202010059368 A CN202010059368 A CN 202010059368A CN 111244193 A CN111244193 A CN 111244193A
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layer
electrode
diodes
substrate
quantum dot
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CN111244193B (en
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李俊杰
刘耀东
罗军
周娜
王桂磊
高建峰
杨涛
殷华湘
赵超
朱慧珑
王文武
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Institute of Microelectronics of CAS
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/02002—Arrangements for conducting electric current to or from the device in operations
    • H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
    • H01L31/035218—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum dots
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type

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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Light Receiving Elements (AREA)

Abstract

The invention discloses a diode, a detector and a manufacturing method of the detector, and relates to the technical field of infrared detection to optimize the process and improve the detection performance. The diode comprises a first electrode layer, a second electrode layer and a quantum dot lamination layer positioned between the first electrode layer and the second electrode layer; the orthographic projection of the second electrode layer on the layer surface of the first electrode layer covers the orthographic projection of the quantum dot lamination layer on the layer surface of the first electrode layer. The detector applies the diode, and the detector is manufactured by the manufacturing method of the detector provided by the invention.

Description

Diode, detector and manufacturing method of detector
Technical Field
The invention relates to the technical field of detection, in particular to a diode, a detector and a manufacturing method of the detector.
Background
The detector is an instrument for converting measured information into electric signals, and can convert the measured information into electric signals according to a certain rule and output the electric signals so as to meet the requirements of information transmission, processing, storage, display, recording, control and the like.
The probe includes a diode for sensing the information being measured and converting the information being measured into an electrical signal. The diode has two oppositely distributed electrode layers and a functional film layer positioned between the electrode layers. The functional film layer is used for sensing measured information and converting the measured information into an electric signal. The oppositely distributed electrode layers are used for leading out electric signals.
In order to facilitate the extraction of the electrical signal, it is necessary to form a first electrode lead layer in ohmic contact with the first electrode layer on the first electrode layer of the diode and a second electrode lead layer in ohmic contact with the second electrode layer on the second electrode layer of the diode. However, the prior art often adopts etching and patterning processes to form the first electrode lead layer and the second electrode lead layer, which has the problem of complex process.
Disclosure of Invention
The invention aims to provide a diode, a detector and a manufacturing method of the detector, wherein a first electrode lead layer and a second electrode lead layer are formed in a self-aligning manner, natural isolation of the formed first electrode lead layer and the second electrode lead layer can be realized, and finally, the forming process of the first electrode lead layer and the second electrode lead layer is effectively simplified.
In order to achieve the above object, the present invention provides a diode comprising a first electrode layer, a second electrode layer, and a quantum dot stack located between the first electrode layer and the second electrode layer; the orthographic projection of the second electrode layer on the layer surface of the first electrode layer covers the orthographic projection of the quantum dot lamination layer on the layer surface of the first electrode layer.
Preferably, an orthographic projection of the second electrode layer on the layer of the first electrode layer covers the first electrode layer.
Preferably, the first electrode layer and/or the second electrode layer are both semiconductor electrode layers or quantum dot electrode layers.
Preferably, the quantum dot stack is a PIN-type quantum dot stack;
the quantum dot lamination is a lamination of any one material or a lamination of at least two materials of silicon quantum dots, germanium quantum dots, cadmium sulfide quantum dots, cadmium selenide quantum dots, cadmium telluride quantum dots, zinc selenide quantum dots, lead sulfide quantum dots, lead selenide quantum dots, indium phosphide quantum dots and indium arsenide quantum dots.
Compared with the prior art, in the diode provided by the invention, the orthographic projection of the second electrode layer on the layer surface of the first electrode layer covers the orthographic projection of the quantum dot lamination layer on the layer surface of the first electrode layer, so that the diode with a T-shaped or I-shaped structure can be formed by the second electrode layer, the quantum dot lamination layer and the first electrode layer. On the basis, when the first electrode lead layer in ohmic contact with the first electrode layer and the second electrode lead layer in ohmic contact with the second electrode layer are formed, the second electrode layer can be used as a barrier layer to prevent the first electrode lead layer from being deposited on the quantum dot lamination layer so as to isolate the formed first electrode lead layer from the formed second electrode lead layer, and the second electrode layer can also be used as a patterning mask, so that the first electrode lead layer and the second electrode lead layer are formed in self-aligned deposition positions, and the forming process of the first electrode lead layer and the second electrode lead layer is simplified. Therefore, when the diode provided by the invention is applied to the manufacture of a detector, the first electrode lead layer and the second electrode lead layer can be formed in a self-aligned mode, and the first electrode lead layer and the second electrode lead layer can be naturally isolated without other processes, so that the forming processes of the first electrode lead layer and the second electrode lead layer are effectively simplified.
The invention also provides a detector, which comprises a substrate and M diodes formed on the surface of the substrate at intervals, wherein the first electrode layers of the M sensors are electrically connected together, the second electrode layers of the M sensors are electrically connected together, and M is an integer greater than or equal to 2.
Preferably, the second electrode layers comprised by the M diodes are connected in series; or the like, or, alternatively,
the M diodes comprise k groups of diodes, the second electrode layers of the diodes are connected in parallel, and the second electrode layers of the diodes in each group are connected in series; k is an integer less than or equal to M.
Preferably, the probe further includes a first electrode lead layer and a second electrode lead layer; the first electrode layers included by the M diodes are in ohmic contact with the first electrode lead layer, the second electrode layers included by the M diodes are in ohmic contact with the second electrode lead layer, and the orthographic projection of the second electrode lead layer on the layer surface of the first electrode lead layer is mutually independent from the first electrode lead layer.
Preferably, the first electrode layer and the first electrode lead layer included in the M diodes are formed on the surface of the substrate; the second electrode lead layer is formed on the surface, facing away from the substrate, of the second electrode layer included in the M diodes.
Compared with the prior art, the beneficial effects of the detector provided by the invention are the same as those of the sensor in the technical scheme, and are not repeated herein.
The invention also provides a manufacturing method of the detector, which comprises the following steps:
providing a substrate;
forming M diodes on a substrate; each diode is the diode provided by the invention; the first electrode layers included in the M diodes are electrically connected together, the second electrode layers included in the M diodes are electrically connected together, and M is an integer greater than or equal to 2.
Preferably, the second electrode layers comprised by the M diodes are connected in series;
or the like, or, alternatively,
the M diodes comprise k groups of diodes, the second electrode layers of the diodes are connected in parallel, and the second electrode layers of the diodes in each group are connected in series; k is an integer less than or equal to M.
Preferably, the M diodes are formed on the substrate, including:
forming a quantum dot material lamination on the surface of the substrate;
forming an electrode material layer on the surface of the quantum dot material lamination layer, which is far away from the substrate;
and processing the quantum dot material lamination, the electrode material layer and the substrate to form M diodes.
Preferably, after the M diodes are formed on the substrate, the method for manufacturing the detector further includes:
forming a first electrode lead layer on a surface of a substrate; the first electrode layers included in the M diodes are in ohmic contact with the first electrode lead layer; a first electrode lead layer formed on a surface of the substrate;
forming a second electrode lead layer on the surface, facing away from the substrate, of the second electrode layer included in the M diodes; the second electrode layers included by the M diodes are in ohmic contact with the second electrode lead layer, and the orthographic projection of the second electrode lead layer on the layer surface of the first electrode lead layer is mutually independent from the first electrode lead layer.
Compared with the prior art, the beneficial effects of the manufacturing method of the detector provided by the invention are the same as those of the detector in the technical scheme, and are not repeated herein.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the invention and not to limit the invention. In the drawings:
FIG. 1 is a block diagram of a typical prior art photodetector;
fig. 2 is a schematic structural diagram of a diode according to an embodiment of the present invention;
FIG. 3 is a schematic top view of a detector provided in accordance with a first embodiment of the present invention;
FIG. 4 is a cross-sectional view A-A of FIG. 3;
FIG. 5 is a cross-sectional view B-B of FIG. 3;
FIG. 6 is a schematic top view of a detector provided in accordance with a second embodiment of the present invention;
FIG. 7 is a cross-sectional view A-A of FIG. 6;
FIG. 8 is a schematic top view of a detector provided in accordance with a third embodiment of the invention;
FIG. 9 is a schematic top view of a detector provided in accordance with a fourth embodiment of the invention;
FIG. 10 is a cross-sectional view A-A of FIG. 9;
FIG. 11 is a flow chart of a method for fabricating a probe according to a first embodiment of the present invention;
fig. 12 is a front cross-sectional view of a quantum material stack formed on a substrate according to a first embodiment of the invention;
fig. 13 is a front sectional view of a quantum dot material stack with an electrode material layer formed thereon according to a first embodiment of the present invention;
FIG. 14 is a schematic top view illustrating a first embodiment of the present invention for applying and patterning a photoresist on a surface of an electrode material layer;
FIG. 15 is a sectional view taken along line A-A of FIG. 14;
fig. 16 is a schematic top view of the electrode material layer, quantum dot material stack and substrate after processing provided by the first embodiment of the invention;
FIG. 17 is a sectional view taken along line A-A of FIG. 16;
FIG. 18 is a schematic top view of the first embodiment of the present invention after photoresist removal;
fig. 19 is a sectional view taken along line a-a of fig. 18.
10, a lower electrode layer, 11, an upper electrode layer, 12, a photoelectric conversion functional layer, 13, an upper electrode lead layer and 14, a lower electrode lead layer;
20. the quantum dot structure comprises a first electrode layer, 21, a second electrode layer, 210, an electrode material layer, 22, a quantum dot lamination, 220, a P-type quantum dot layer, 2200, a P-type quantum dot material layer, 221, an intrinsic quantum dot layer, 2210, an intrinsic quantum dot material layer, 222, an N-type quantum dot layer, 2220, an N-type quantum dot material layer, 23, a substrate, 240, a graph and 241, a bridge arm; 30. a first electrode lead layer 31, a second electrode lead layer; 4. and a bonding pad.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments.
Various schematic diagrams of embodiments of the invention are shown in the drawings, which are not drawn to scale. Wherein certain details are exaggerated and possibly omitted for clarity of understanding. The shapes of various regions, layers, and relative sizes and positional relationships therebetween shown in the drawings are merely exemplary, and deviations may occur in practice due to manufacturing tolerances or technical limitations, and a person skilled in the art may additionally design regions/layers having different shapes, sizes, relative positions, as actually required.
In the following, the terms "first", "second", etc. are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first," "second," etc. may explicitly or implicitly include one or more of that feature. In the description of the present application, "a plurality" means two or more unless otherwise specified.
In addition, in the present invention, directional terms such as "upper" and "lower" are defined with respect to a schematically placed orientation of components in the drawings, and it is to be understood that these directional terms are relative concepts, which are used for relative description and clarification, and may be changed accordingly according to the change of the orientation in which the components are placed in the drawings.
In the present invention, unless expressly stated or limited otherwise, the term "coupled" is to be interpreted broadly, e.g., "coupled" may be fixedly coupled, detachably coupled, or integrally formed; may be directly connected or indirectly connected through an intermediate.
The detector is an instrument for converting measured information into electric signals, and can convert the measured information into electric signals according to a certain rule and output the electric signals so as to meet the requirements of information transmission, processing, storage, display, recording, control and the like.
The basic structure of the detector will be described below by taking a quantum dot photodetector as an example. It is to be understood that the following description is intended to be illustrative, and not restrictive.
Fig. 1 is a block diagram of a typical conventional photodetector. As shown in fig. 1, the photodetector includes a lower electrode layer 10 and an upper electrode layer 11, and a photoelectric conversion functional layer 12 located between the lower electrode layer 10 and the upper electrode layer 11. In order to facilitate the extraction of electrical signals, it is necessary to form an upper electrode lead layer 13 and a lower electrode lead layer 14 on the upper electrode layer 11 and the lower electrode layer 10, respectively. In order to ensure self-alignment and natural isolation of the upper electrode lead layer 13 and the lower electrode lead layer 14, patterning and etching processes are required, and there is a problem in that the processes are complicated.
In view of the above technical problems, embodiments of the present invention provide a diode. The diode can be applied to any one of a photodetector, a chemical detector and the like, and is not particularly limited herein.
Fig. 2 is a schematic structural diagram of a diode according to an embodiment of the present invention. As shown in fig. 2, the diode comprises a first electrode layer 20, a second electrode layer 21 and a stack of quantum dots 22 between the first electrode layer 20 and the second electrode layer 21. The orthographic projection of the second electrode layer 21 on the layer of the first electrode layer 20 covers the orthographic projection of the quantum dot lamination 22 on the layer of the first electrode layer 20.
As shown in fig. 2, since the orthogonal projection of the second electrode layer 21 on the layer of the first electrode layer 20 covers the orthogonal projection of the quantum dot stack 22 on the layer of the first electrode layer 20, the diode formed by the second electrode layer 21, the quantum dot stack 22 and the first electrode layer 20 has a T-shaped or i-shaped structure in the front view direction. Therefore, when forming the second electrode lead layer in ohmic contact with the second electrode layer 21 and forming the first electrode lead layer in ohmic contact with the first electrode layer 20, the second electrode layer 21 can serve as a barrier layer to prevent the formation of the electrode lead layer on the sidewall of the quantum dot stack 22 between the first electrode layer 20 and the second electrode layer 21, and finally prevent the contact between the second electrode lead layer and the first electrode lead layer. And the second electrode layer 21 can be used as a patterning mask, and the end surfaces of the second electrode lead layer and the first electrode lead layer are both terminated at the end surface of the second electrode layer 21, i.e. the second electrode lead layer and the first electrode lead layer can be self-aligned under the action of the second electrode layer 21. Compared with the prior art, the first electrode lead layer and the second electrode lead layer can be formed in a self-aligned mode, and natural isolation can be achieved between the first electrode lead layer and the second electrode lead layer without other processes, so that the forming process of the first electrode lead layer and the second electrode lead layer is effectively simplified. In addition, the naturally-isolated first electrode lead layer and the second electrode lead layer can also improve the output performance of the signal, and when the diode is applied to a detector, the signal output performance of the detector can also be improved.
Compared with the prior art, when the diode is applied to a photodetector, the quantum dot stack 22 can convert light energy into electric energy under the condition that light is incident on the photodetector, so that the detector provided by the embodiment of the invention has lower driving voltage and faster response speed.
The materials of the first electrode layer 20 and the second electrode layer 21 may be the same or different. Illustratively, the first electrode layer 20 and the second electrode layer 21 may be a silicon-based semiconductor material, a germanium-based semiconductor material, or a quantum dot material. Also, when the first electrode layer 20 is a P-type electrode layer, the second electrode layer 21 should be an N-type electrode layer. When the first electrode layer 20 is an N-type electrode layer, the second electrode layer 21 should be a P-type electrode layer. The first electrode layer 20 and the second electrode layer 21 are heavily doped to improve the output performance of the electrical signal.
As for the material of the quantum dot stack 22, it may be any material as long as it has a function of converting energy of other forms into electric energy. For example: when the first electrode layer 20 and the second electrode layer 21 are made of silicon-based semiconductor materials, the quantum dot stack 22 may be a stack of any one of germanium-silicon quantum dots, germanium quantum dots, cadmium sulfide quantum dots, cadmium selenide quantum dots, cadmium telluride quantum dots, zinc selenide quantum dots, lead sulfide quantum dots, lead selenide quantum dots, indium phosphide quantum dots, and indium arsenide quantum dots, or a stack of multiple materials. Another example is: when the first electrode layer 20 and the second electrode layer 21 are made of germanium-based semiconductor materials, the quantum dot stack 22 may be a stack of any one of germanium-silicon quantum dots, cadmium sulfide quantum dots, cadmium selenide quantum dots, cadmium telluride quantum dots, zinc selenide quantum dots, lead sulfide quantum dots, lead selenide quantum dots, indium phosphide quantum dots, and indium arsenide quantum dots, or a stack of multiple materials.
As a possible implementation, an orthographic projection of the second electrode layer 21 at the level of the first electrode layer 20 covers the first electrode layer 20. It is not limited to that the first electrode layer 20 is located in the orthogonal projection of the second electrode layer 21 on the layer of the first electrode layer 20, or the orthogonal projections of the first electrode layer 20 and the second electrode layer 21 on the layer of the first electrode layer 20 are completely overlapped.
When the orthographic projections of the first electrode layer 20 and the second electrode layer 21 on the layer surface of the first electrode layer 20 are completely overlapped, the second electrode layer 21 can ensure that the first electrode layer lead layer is just formed on one side of the first electrode layer 20, and can form good ohmic contact with the first electrode layer 20, so that the output performance of the electrical signal of the diode can be improved. In addition, since the orthographic projections of the first electrode layer 20 and the second electrode layer 21 on the layer surface of the first electrode layer 20 are completely overlapped, a relatively large number of diodes can be formed in a unit area, and the detection accuracy of the detector can be improved to a certain extent.
It should be understood that when the first electrode layer 20 is located within the orthographic projection of the second electrode layer 21 at the level of the first electrode layer 20, other processes need to be controlled to ensure that the first electrode lead layer forms a good ohmic contact with the first electrode layer 20 when forming the first electrode lead layer and the second electrode lead layer.
As a possible implementation manner, the first electrode layer 20 and/or the second electrode layer 21 are both semiconductor electrode layers or quantum dot electrode layers, but are not limited thereto.
For example: the first electrode layer 20 and the second electrode layer 21 are quantum dot electrode layers, and the diode of this structure has high gain. The diode with the structure is applied to the photoelectric detector, so that the sensitivity of the photoelectric detector to weak light can be improved.
As a possible implementation, the quantum dot stack is a PIN-type quantum dot stack. The PIN-type quantum dot stack comprises, in order in a direction away from the first electrode layer 20, a P-type quantum dot layer 220, an intrinsic quantum dot layer 221 and an N-type quantum dot layer 222.
In the first example, the first electrode layer 20 is a P-type silicon quantum dot electrode layer, the P-type quantum dot layer 220 is a P-type germanium quantum dot layer, the intrinsic quantum dot layer 221 is an intrinsic germanium quantum dot layer, the N-type quantum dot layer 222 is an N-type germanium quantum dot layer, and the second electrode layer 21 is an N-type silicon quantum dot electrode layer.
In a second example, first electrode layer 20 is an N-type silicon quantum dot electrode layer, P-type quantum dot layer 220 is a P-type germanium quantum dot layer, intrinsic quantum dot layer 221 is an intrinsic germanium quantum dot layer, N-type quantum dot layer 222 is an N-type germanium quantum dot layer, and second electrode layer 21 is a P-type silicon quantum dot electrode layer.
Fig. 3 and 4 show schematic structural diagrams of a detector provided by an embodiment of the invention. As shown in fig. 3 and 4, the detector includes a substrate 23 and M diodes as described in fig. 2 formed on a surface of the substrate 23 at intervals, wherein first electrode layers 20 included in the M diodes are electrically connected together, second electrode layers 21 included in the M diodes are electrically connected together, and M is an integer greater than or equal to 2. The electrical connection relationship of the first electrode layers 20 included in the M diodes and the electrical connection relationship of the second electrode layers 21 included in the M diodes are not specifically limited herein. It should be understood that the substrate 23 is a semiconductor substrate, and the material thereof may be a semiconductor material such as silicon, germanium, or the like.
Compared with the prior art, the detector provided by the embodiment of the invention has the same beneficial effects as the diode described in the embodiment of the invention, and the description is omitted.
In addition, the mutually independent quantum dot stacks 22 included in the M diodes provided in the detector according to the embodiment of the present invention increase the density of the quantum dot stacks 22 distributed on the substrate 23, compared with the integral quantum dot stack included in one diode provided in the detector according to the prior art. For example, while the detector provided by the prior art uses an integral quantum dot stack to sense the measured signal, the detector provided by the invention uses a plurality of structurally independent quantum dot stacks to sense the measured signal, and under the same detection condition, the detector has higher resolution to the measured signal, thereby further improving the sensitivity of the detector.
As a possible implementation, the second electrode layers 21 comprised by the M diodes that the probe has are connected in series.
As another possible implementation manner, the M diodes include k groups of diodes, the second electrode layers 21 included in each group of diodes are connected in parallel, and the second electrode layers 21 included in each group of diodes are connected in series; k is an integer less than or equal to M.
The series connection and the parallel connection refer to a connection relationship of the second electrode layer 21 in a structure, and are not a connection relationship of the second electrode layer 21 in a circuit.
The connection relationship of the second electrode layers 21 included in the M diodes will be described in detail below with reference to specific embodiments, and it should be understood that the following detailed description is only illustrative and not limiting.
In a first example, and with particular reference to fig. 3-5, the detector has M diodes distributed in a lattice. The diodes 2 at any pair of corners in the dot matrix are taken as a starting point, the diodes 2 at any pair of corners except the starting point in the dot matrix are taken as an end point, all the diodes in the dot matrix are sequentially connected in series, the diodes 2 at the starting point and the end point correspond to the external bonding pad 4 so as to be conveniently and electrically connected with a peripheral detecting instrument, and specific structures, positions and the like of the bonding pad 4 are not specifically limited.
In a second example, and with particular reference to fig. 6 and 7, the detector has M diodes distributed in a lattice. And the second electrode layers 21 included in each group of diodes are connected in series, and the second electrode layers 21 included in each group of diodes are connected in parallel. And is externally connected with the bonding pad 4 after being connected in parallel so as to be electrically connected with a peripheral detecting instrument.
In a third example, referring to fig. 8 specifically, M diodes of the probe are distributed in a dot matrix, and both ends of a row of second electrode layer strings formed by connecting the second electrode layers 21 included in the diodes in the same row in series are respectively connected to the external pads 4. The two ends of the row second electrode layer string formed by connecting the second electrode layers 21 included in the diodes in the same row in series are respectively externally connected with the bonding pad 4. Each column of the second electrode layer strings corresponds to a pair of pads 4, and each row of the second electrode layer strings also corresponds to a pair of pads 4. The detector with the structure can measure the whole information of the measured object and the local information of the measured object in practical application, and has better applicability.
In the fourth example, the probe has M-1 second electrode layers 21 of M diodes connected in series and then connected to the external pad 4, and the remaining 1 second electrode layer 21 is directly connected to the external pad 4. Of course, M to N second electrode layers 21 may be connected in series and then connected to the pad 4, and the remaining N second electrode layers 21 are directly connected to the pad 4, where N is a positive integer greater than 1 and smaller than M. The detector adopting the structure can measure the whole information of the measured object and the local information of the measured object in practical application, and has better applicability.
As a possible implementation, referring in particular to fig. 9 and 10, the above-described probe further includes a first electrode lead layer 30 and a second electrode lead layer 31. The first electrode layer 20 included in the M diodes is in ohmic contact with the first electrode lead layer 30. The second electrode layer 21 included in the M diodes is in ohmic contact with the second electrode lead layer 31. The orthogonal projection of the second electrode lead layer 31 at the level of the first electrode lead layer 30 is independent of the first electrode lead layer 30.
Alternatively, the first electrode layer 20 and the first electrode lead layer 30 included in the M diodes are formed on the surface of the substrate 23. The second electrode lead layer 31 is formed on the surface of the second electrode layer 21 included in the M diodes and the connection structure for connecting the second electrode layer 21 facing away from the substrate 23.
When the first electrode lead layer 30 and the second electrode lead layer 31 are formed, the second electrode layer 21 included in the M diodes may serve as a barrier layer, that is, the second electrode lead layer 31 may be formed on the surface of the second electrode layer 21 and the surface of the connection structure for connecting the second electrode 21, which is away from the substrate 23, and the first electrode lead layer 30 in ohmic contact with the first electrode layer 20 may be formed on the area where the orthographic projection of the substrate 23 is not covered by the second electrode layer 21.
The final region where the first electrode lead layer 30 and the second electrode lead layer 31 are formed is affected by the connection relationship of the second electrode layer 21. That is, the second electrode lead layer 31 is formed on the surface of the second electrode layer 21 facing away from the substrate 23, and the first electrode lead layer 30 is formed on the surface of the substrate 23 which is not blocked by the second electrode layer 21.
The first electrode lead layer 30 and the second electrode lead layer 31 are made of the same material and are indium tin oxide, cobalt, platinum, or ruthenium.
The embodiment of the invention also provides a manufacturing method of the detector. As shown in fig. 11, the method for manufacturing the detector includes:
s10: a substrate 23 is provided, and the substrate 23 is a semiconductor substrate, and the material thereof may be a semiconductor material such as silicon, germanium, or the like.
S11: m diodes are formed on the substrate 23. Each diode is the diode described in figure 2. The first electrode layers 20 included in the M diodes are electrically connected together, the second electrode layers 21 included in the M diodes are electrically connected together, and M is an integer greater than or equal to 2.
It should be understood that whether the substrate 23 is a P-type substrate or an N-type substrate should be determined according to the type of the second electrode layer 21. When the second electrode layer 21 is an N-type electrode layer, the substrate 23 should be a P-type substrate. When the second electrode layer 21 is a P-type electrode layer, the substrate 23 should be an N-type substrate.
Compared with the prior art, the manufacturing method of the detector provided by the embodiment of the invention has the same beneficial effects as the detector provided by the embodiment, and the details are not repeated here.
As a possible implementation, a method of forming M diodes on a substrate 23 includes:
s110: referring specifically to fig. 12, a stack of quantum dot materials is formed on a surface of a substrate 23. Any of the existing film forming processes can be used. For example: a first quantum dot material layer is formed on the surface of the substrate 23 by an epitaxial growth process, and ion doping and annealing are performed to form the P-type quantum dot material layer 2200. A second quantum dot material layer is formed on the surface of the P-type quantum dot material layer 2200 facing away from the substrate 23 to form an intrinsic type quantum dot material layer 2210. A third quantum dot material layer is formed on the surface of the intrinsic type quantum dot material layer 2210 facing away from the substrate 23, and ion doping, i.e., annealing, is performed to form an N type quantum dot material layer 2220.
S111: referring specifically to fig. 13, a layer 210 of electrode material is formed on the surface of the stack of quantum dot material facing away from the substrate 23.
When the quantum dot material stack exemplified in step S110 is formed on the substrate 23, the electrode material layer 210 is formed on the surface of the N-type quantum dot material layer 2220 facing away from the substrate 23. It is to be understood that the material of electrode material layer 210 is the same as the material of substrate 23.
S112: the stack of quantum dot material, electrode material layer 210 and substrate 23 are processed to form M diodes.
The method of processing the quantum dot material stack, the electrode material layer, and the substrate to form M diodes will be described in detail below with reference to specific embodiments, it being understood that the following description is by way of illustration only and not by way of limitation.
S1120: referring specifically to fig. 14 and 15, a photoresist is coated on a surface of the formed electrode material layer 210 facing away from the substrate 23, and the photoresist is patterned, preferably, M patterns 240 distributed in a lattice manner and having a circular orthographic projection on the substrate 23 are formed, and a bridge arm 241 is used for connecting the patterns 240.
S1121: referring specifically to fig. 16 and 17, a plasma is used to anisotropically etch a portion of substrate 23.
S1122: referring specifically to fig. 18 and 19, the photoresist is removed.
S1123: referring to fig. 3, fig. 4 and fig. 5 specifically, the quantum dot material lamination and the substrate 23 below the bridge arm 241 and below the circumference of the near pattern 240 are removed by dry etching, and the electrode material layer 210 below the bridge arm 241 and the pattern 240 is retained, so as to form M diodes which are distributed in a lattice manner and have a connection relationship. For a specific connection relationship, reference may be made to the above description about the connection relationship of the second electrode layer 21, and details are not described herein.
It needs to be further explained that: the un-etched substrate 23 under the arm 241 and the pattern 240 forms a first electrode layer 20, the un-etched quantum dot material stack under the center of the pattern 240 forms a quantum dot stack 22, and the remaining electrode material layer 210 under the arm 241 and the pattern 240 is a second electrode layer 21.
As a possible implementation manner, after forming M diodes on the substrate 23, the method for manufacturing the detector further includes:
s113: referring specifically to fig. 9 and 10, a first electrode lead layer 30 is formed on a surface of a substrate 23; the first electrode layer 20 included in the M diodes is in ohmic contact with the first electrode lead layer 30; the first electrode lead layer 30 is formed on the surface of the substrate 23;
a second electrode lead layer 31 is formed on the surface of the second electrode layer 21 included in the M diodes and the connection structure for connecting the second electrode 21 facing away from the substrate 23. The second electrode layer 21 included in the M diodes is in ohmic contact with the second electrode lead layer 31. The orthogonal projection of the second electrode lead layer 31 at the level of the first electrode lead layer 30 is independent of the first electrode lead layer 30.
The first electrode lead layer 30 and the second electrode lead layer 31 may be formed by various conventional film forming processes, such as a magnetron sputtering method.
As a possible implementation, the second electrode layers 21 comprised by the M diodes that the probe has are connected in series.
As another possible implementation, the M diodes include k groups of diodes. The second electrode layers 21 comprised by the diodes of each group are connected together in parallel. The second electrode layers 21 comprised by each group of diodes are connected in series. k is an integer less than or equal to M. The specific connection relationship of the second electrode layer 21 included in the M diodes can refer to the foregoing description, and is not described in detail here.
The embodiments in the present specification are described in a progressive manner, and the same and similar parts among the embodiments are referred to each other, and each embodiment focuses on the differences from the other embodiments. In particular, for the apparatus embodiment, since it is substantially similar to the method embodiment, it is relatively simple to describe, and reference may be made to some descriptions of the method embodiment for relevant points.
The above description is only for the specific embodiments of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present invention, and all the changes or substitutions should be covered within the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the appended claims.

Claims (12)

1. A diode, comprising:
the quantum dot structure comprises a first electrode layer, a second electrode layer and a quantum dot lamination layer positioned between the first electrode layer and the second electrode layer; and the orthographic projection of the second electrode layer on the layer plane of the first electrode layer covers the orthographic projection of the quantum dot lamination layer on the layer plane of the first electrode layer.
2. The diode of claim 1, wherein an orthographic projection of said second electrode layer at a level of said first electrode layer overlies said first electrode layer.
3. The diode of claim 1, wherein the first electrode layer and/or the second electrode layer are both semiconductor electrode layers or quantum dot electrode layers.
4. The diode of any one of claims 1 to 3, wherein the quantum dot stack is a PIN-type quantum dot stack;
the quantum dot lamination is a lamination of any one material or a lamination of at least two materials of silicon quantum dots, germanium quantum dots, cadmium sulfide quantum dots, cadmium selenide quantum dots, cadmium telluride quantum dots, zinc selenide quantum dots, lead sulfide quantum dots, lead selenide quantum dots, indium phosphide quantum dots and indium arsenide quantum dots.
5. A detector, comprising a substrate and M diodes according to any one of claims 1 to 4 formed on a surface of the substrate at intervals, wherein first electrode layers included in the M diodes are electrically connected together, second electrode layers included in the M sensors are electrically connected together, and M is an integer greater than or equal to 2.
6. A detector according to claim 5, wherein said second electrode layers comprised by M of said diodes are connected in series; or the like, or, alternatively,
the M diodes comprise k groups of diodes, the second electrode layers of each group of diodes are connected in parallel, and the second electrode layers of each group of diodes are connected in series; k is an integer less than or equal to M.
7. The probe according to claim 5 or 6, further comprising a first electrode lead layer and a second electrode lead layer; m first electrode layers that the diode includes with first electrode lead layer ohmic contact, M second electrode layers that the diode includes with second electrode lead layer ohmic contact, the second electrode lead layer is in the orthographic projection of the aspect that first electrode lead layer place is in with first electrode lead layer is independent each other.
8. The probe according to claim 7, wherein the first electrode layers included in the M diodes and the first electrode lead layer are formed on the surface of the substrate; the second electrode lead layer is formed on the surface, facing away from the substrate, of the second electrode layer included in the M diodes.
9. A method of fabricating a detector, comprising:
providing a substrate;
forming M diodes on the substrate; each of the diodes is the diode according to any one of claims 1 to 4; the first electrode layers included in the M diodes are electrically connected together, the second electrode layers included in the M diodes are electrically connected together, and M is an integer greater than or equal to 2.
10. The method of claim 9, wherein the second electrode layers included in the M diodes are connected in series;
or the like, or, alternatively,
the M diodes comprise k groups of diodes, the second electrode layers of the diodes in each group are connected in parallel, and the second electrode layers of the diodes in each group are connected in series; k is an integer less than or equal to M.
11. The method of claim 9, wherein forming M diodes on the substrate comprises:
forming a quantum dot material lamination on the surface of the substrate;
forming an electrode material layer on the surface of the quantum dot material lamination layer, which faces away from the substrate;
and processing the quantum dot material laminated layer, the electrode material layer and the substrate to form M diodes.
12. The method of claim 10 or 11, wherein after forming the M diodes on the substrate, the method further comprises:
forming a first electrode lead layer on a surface of the substrate; the first electrode layers included in the M diodes are in ohmic contact with the first electrode lead layer; the first electrode lead layer is formed on the surface of the substrate;
forming a second electrode lead layer on the surface, facing away from the substrate, of the second electrode layer included in the M diodes; the M second electrode layers included by the diodes are in ohmic contact with the second electrode lead layers, and the orthographic projections of the second electrode lead layers on the layer surface where the first electrode lead layers are located are mutually independent from the first electrode lead layers.
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