CN111233023A - Method for improving CuI hole mobility - Google Patents
Method for improving CuI hole mobility Download PDFInfo
- Publication number
- CN111233023A CN111233023A CN202010040376.0A CN202010040376A CN111233023A CN 111233023 A CN111233023 A CN 111233023A CN 202010040376 A CN202010040376 A CN 202010040376A CN 111233023 A CN111233023 A CN 111233023A
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- CN
- China
- Prior art keywords
- cui
- improving
- pressure
- sample
- diamond anvil
- Prior art date
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- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 13
- 239000000463 material Substances 0.000 claims abstract description 23
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 13
- 239000010432 diamond Substances 0.000 claims abstract description 13
- 239000000843 powder Substances 0.000 claims abstract description 4
- 229910052702 rhenium Inorganic materials 0.000 claims abstract description 4
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 claims abstract description 4
- 230000005012 migration Effects 0.000 claims abstract description 3
- 238000013508 migration Methods 0.000 claims abstract description 3
- 239000010979 ruby Substances 0.000 claims abstract description 3
- 229910001750 ruby Inorganic materials 0.000 claims abstract description 3
- 239000004065 semiconductor Substances 0.000 abstract description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052802 copper Inorganic materials 0.000 abstract description 4
- 239000010949 copper Substances 0.000 abstract description 4
- 239000010409 thin film Substances 0.000 abstract description 2
- 229910021595 Copper(I) iodide Inorganic materials 0.000 description 19
- 230000005525 hole transport Effects 0.000 description 11
- 239000010408 film Substances 0.000 description 3
- 239000011244 liquid electrolyte Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000026045 iodination Effects 0.000 description 2
- 238000006192 iodination reaction Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- LSXDOTMGLUJQCM-UHFFFAOYSA-M copper(i) iodide Chemical compound I[Cu] LSXDOTMGLUJQCM-UHFFFAOYSA-M 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G3/00—Compounds of copper
- C01G3/04—Halides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0321—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 characterised by the doping material
Abstract
The invention discloses a method for improving CuI hole mobility, and belongs to the technical field of copper-based P-type semiconductor materials. Taking a rhenium sheet as a gasket material, and taking a ruby fluorescence peak as a calibration object of the pressure; arranging four electrodes on a diamond anvil cell, adding a CuI powder sample into a sample cavity of the gasket, and applying a pressure of 0.55-15.16 GPa on the inside of the cavity by using a diamond anvil cell device sample to obtain the CuI material with improved hole migration rate. The invention provides a new method for improving the hole mobility of CuI, provides a new direction for the application of CuI in the field of electronic devices such as solar cells, semiconductor thin film transistors and the like, and has the advantages of simple operation, controllability and the like.
Description
Technical Field
The invention belongs to the technical field of copper-based P-type semiconductor materials, and particularly relates to a method for improving the hole mobility of a CuI material.
Background
The early houndsite cell was a houndsite sensitized solar cell containing a liquid electrolyte, but the liquid electrolyte used in the cell dissolved the houndsite component, resulting in extremely poor stability of the cell. Later researchers assembled all-solid-state Cajulian solar cells by optimizing the fabrication process to replace the liquid electrolyte with a solid hole transport material and improved the photoelectric conversion efficiency. Transport layer materials are key to ensuring the photovoltaic properties of the device in order to ionize photogenerated electron-hole pairs or excitons into free electron-holes and for successful separation.
The electrical and optical properties of the hole transport layer will seriously affect the fill factor, open-circuit voltage and short-circuit current of the cell, so that the selection of the hole transport layer with controllable physical properties is of great significance for further understanding of generation, separation, transmission and recombination of photogenerated carriers. Up to now, high performance batteries generally use organic hole transport materials, but the organic hole transport material preparation process and purification process are complicated and expensive, and the pure phase organic hole transport material has low conductivity, which hinders the commercial development of solar cells. The inorganic hole transport material has the advantages of high carrier mobility, simple preparation process, high stability and the like, and becomes a substitute of an organic hole transport material.
CuI is applied to an upright CaiOkini battery as an inorganic hole transport material, and the traditional method for improving the performance of a CuI hole transport layer comprises the following steps: copper film iodination, solution deposition and the like, but the copper film iodination requires precise control of reaction time, has high operation difficulty and low success rate, and the solution method can damage the calcium chandelite film and influence the photoelectric conversion efficiency of the cell.
Disclosure of Invention
The invention aims to solve the problem of overcoming the defects in the background art and provide a novel method for improving the mobility of the CuI hole.
The specific technical scheme of the invention is as follows:
a method for improving CuI hole mobility is carried out in a diamond anvil cell under the condition of room temperature, a rhenium sheet is selected as a gasket material, and a ruby fluorescence peak is used as a calibration object of pressure; arranging four electrodes on a diamond anvil cell, adding a CuI powder sample into a sample cavity of a gasket, and applying a pressure of 0.55-15.16 GPa, preferably 9.88-15.16 GPa, to the inside of the cavity by using the diamond anvil cell device sample to obtain the CuI material with improved hole migration rate.
Has the advantages that:
the CuI is taken as a typical P-type semiconductor hole transport material, the invention provides a new method for improving the hole mobility of the CuI, provides a new direction for the application of the CuI in the field of electronic devices such as solar cells, semiconductor thin film transistors and the like, and simultaneously has the advantages of simple operation, controllability and the like.
Description of the drawings:
FIG. 1 is a curve of the change of the Hall coefficient of a CuI material with pressure under the conditions of examples 1-3.
FIG. 2 is a graph showing the change of the carrier concentration of the CuI material with pressure under the conditions of examples 1-3.
FIG. 3 is a graph of hole mobility versus pressure for CuI materials under the conditions of examples 1-3.
FIG. 4 is a graph of resistivity versus pressure for CuI materials under the conditions of examples 1-3.
Detailed Description
Example 1
Firstly, a diamond anvil cell device is debugged, a rhenium sheet is pre-pressed to serve as a gasket, the gasket is subjected to insulation treatment after being punched, four electrodes are arranged on the diamond anvil cell, and a cuprous iodide powder sample is added into a sample cavity of the gasket. Sequentially applying 0.55GPa to the samples in the sample cavity; 1.51 GPa; a pressure of the order of 2.2 GPa. And then calibrating the pressure applied to the sample under a laser. Opening a circulating water device; placing the DAC device packaged with the sample on a bracket between two electromagnets, adjusting the distance between the two electromagnets, and screwing down fixing bolts of the two electromagnets; and connecting the four electrodes on the DAC device on the Hall card according to a specified sequence. And obtaining the change relation among the Hall coefficient, the carrier concentration, the hole mobility and the resistivity of the CuI sample.
Example 2
The pressure in the sample cavity of the diamond anvil cell device in the embodiment 1 is changed within the range of 3.86-8.73 GPa, and is tested at pressure points of 3.86GPa, 6.85GPa, 7.83GPa, 8.73GPa and the like.
Example 3
The pressure in the sample cavity of the diamond anvil cell device in the embodiment 1 is changed within the range of 9.88-15.16 GPa, and the pressure is tested at equal pressure points of 9.88GPa, 12.22GPa and 15.16 GPa.
The change curves of the Hall coefficient of the CuI material under different pressures tested in the above examples are shown in FIG. 1, the change of the carrier concentration is shown in FIG. 2, the change of the hole mobility is shown in FIG. 3, and the change of the resistivity is shown in FIG. 4. According to the graphs, the conductive type of a carrier is mainly holes within the pressure range of 0.55-15.16 GPa, the hole mobility is improved along with the increase of the pressure, and the resistivity of CuI is obviously reduced after a period of fluctuation. Within the pressure range of 9.88-15.16 GPa, the change of the hole mobility is more obvious, and the invention can increase the hole mobility to 164cm at the highest2V-1s-1。
Claims (2)
1. A method for improving CuI hole mobility is carried out in a diamond anvil cell under the condition of room temperature, a rhenium sheet is selected as a gasket material, and a ruby fluorescence peak is used as a calibration object of pressure; arranging four electrodes on a diamond anvil cell, adding a CuI powder sample into a sample cavity of the gasket, and applying a pressure of 0.55-15.16 GPa on the inside of the cavity by using a diamond anvil cell device sample to obtain the CuI material with improved hole migration rate.
2. The method for improving the mobility of the CuI holes of claim 1, wherein the pressure applied to the inside of the cavity by the diamond anvil device sample is 9.88-15.16 GPa.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010040376.0A CN111233023A (en) | 2020-01-15 | 2020-01-15 | Method for improving CuI hole mobility |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010040376.0A CN111233023A (en) | 2020-01-15 | 2020-01-15 | Method for improving CuI hole mobility |
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| Publication Number | Publication Date |
|---|---|
| CN111233023A true CN111233023A (en) | 2020-06-05 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010040376.0A Pending CN111233023A (en) | 2020-01-15 | 2020-01-15 | Method for improving CuI hole mobility |
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| Country | Link |
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| CN (1) | CN111233023A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111994961A (en) * | 2020-08-31 | 2020-11-27 | 吉林大学 | Reinforced BaMnO4Method for densification of materials |
| CN113517359A (en) * | 2021-05-07 | 2021-10-19 | 华东师范大学 | Medium-wavelength and long-wavelength infrared transparent conductive film material and preparation method thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20130310332A1 (en) * | 2010-10-25 | 2013-11-21 | University Of Rhode Island | Maple tree-derived products and uses thereof |
| CN108181016A (en) * | 2018-01-08 | 2018-06-19 | 吉林大学 | The measuring method of diamond anvil cell sample temperature |
-
2020
- 2020-01-15 CN CN202010040376.0A patent/CN111233023A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20130310332A1 (en) * | 2010-10-25 | 2013-11-21 | University Of Rhode Island | Maple tree-derived products and uses thereof |
| CN108181016A (en) * | 2018-01-08 | 2018-06-19 | 吉林大学 | The measuring method of diamond anvil cell sample temperature |
Non-Patent Citations (3)
| Title |
|---|
| JIAJIE ZHU ET AL.: "The phase transition and elastic and optical properties of polymorphs of CuI", 《THE PHASE TRANSITION AND ELASTIC AND OPTICAL PROPERTIES OF POLYMORPHS OF CUI》 * |
| 张鑫: "高压下半导体不同导电机制的研究", 《中国博士学位论文全文数据库 基础科学辑》 * |
| 杨晓翠等: "AgI的高压电学性质", 《吉林大学学报（理学版）》 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111994961A (en) * | 2020-08-31 | 2020-11-27 | 吉林大学 | Reinforced BaMnO4Method for densification of materials |
| CN113517359A (en) * | 2021-05-07 | 2021-10-19 | 华东师范大学 | Medium-wavelength and long-wavelength infrared transparent conductive film material and preparation method thereof |
| CN113517359B (en) * | 2021-05-07 | 2022-02-11 | 华东师范大学 | Medium-wavelength and long-wavelength infrared transparent conductive film material and preparation method thereof |
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